CN103178070B - A kind of storehouse photodiode and preparation method thereof - Google Patents
A kind of storehouse photodiode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
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- 238000001259 photo etching Methods 0.000 claims description 23
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Abstract
The present invention proposes a kind of storehouse photodiode and preparation method thereof, and this storehouse photodiode includes: semi-conducting material, the first doped region, the second doped region, the 3rd doped region, the 4th doped region, Chang Yangqu, metal level, passivation layer, photosensitive window and anti-reflecting layer.The present invention realizes ambient light detection function only with a storehouse photodiode, reduces chip area, reduces power consumption, also reduces cost simultaneously.The photosensitive window of the present invention makes more light be irradiated on photosurface, reach to improve the purpose of storehouse photodiode sensitivity, chip both can be isolated by anti-reflecting layer thereon with external environment, can revise again the photoactive spectrum of storehouse photodiode to a certain extent.The preparation method of the present invention makes the storehouse photodiode photo-sensitive cell as ambient light sensor on a silicon substrate, has saved chip area, has reduced power consumption, has reduced cost.
Description
Technical field
The present invention relates to quasiconductor design and manufacturing technology field, particularly to a kind of storehouse photodiode and preparation thereof
Method.
Background technology
Storehouse photodiode is made up of, mainly as the photosensitive unit of ambient light sensor the PN junction that two junction depths are different
Part, for detecting the brightness of surrounding environment light.
At present, the photo-sensitive cell of ambient light sensor mostly is the form of two kinds of photodiode combinations, i.e. two kinds photoelectricity two
Pipe common effect in pole realizes ambient light detection, such as the intelligence disclosed by the Chinese patent of Publication No. CN201255663Y can
Seeing optical sensor, it includes multiple photodiode array to composition, two photodiodes of each photodiode centering
Having different response spectrum characteristics, the photoelectric current exported two diodes by follow-up circuit is processed so that process
After output current signal consistent with the photobehavior of human eye with the relation of spectrum.This utilize the combination of two kinds of photodiodes real
The mode of existing ambient light detection, on the one hand adds the area of chip photosensitive region so that the area of whole chips increases, and also increases
Add the cost of chip；On the other hand add the power consumption of chip, make chip performance reduce.
Summary of the invention
It is contemplated that at least solve technical problem present in prior art, the most innovatively propose a kind of storehouse light
Electric diode and preparation method thereof.
In order to realize the above-mentioned purpose of the present invention, according to the first aspect of the invention, the invention provides a kind of storehouse
Photodiode, comprising: Semiconductor substrate, described Semiconductor substrate is for being lightly doped；First doped region and the second doped region, institute
Stating the first doped region and the second doped region is formed in described Semiconductor substrate, described first doped region is heavy doping, its doping
Type is identical with the doping type of described Semiconductor substrate, described second doped region for being lightly doped, its doping type and described half
The doping type of conductor substrate is contrary, is formed with field at the outer rim of the inner edge of described Semiconductor substrate and described second doped region
Oxygen district；3rd doped region and the 4th doped region, described 3rd doped region and the 4th doped region be formed in described second doped region,
Described 3rd doped region and the 4th doped region are heavy doping, the doping type of described 3rd doped region and described second doped region
Doping type identical, the doping type of described 4th doped region is contrary with the doping type of described second doped region；At least one
Layer metal level, described metal level is formed on described Semiconductor substrate, described metal level respectively with described first doped region, the
Three doped regions and the 4th doped region are connected.
The present invention need not use discrete two kind photodiode jointly to act on as prior art and realizes environment
Light detects, but is prepared as a storehouse photodiode, only with a heap by integrated for two diodes on the same substrate
Stack photodiode realizes ambient light detection function, reduces chip area, reduces power consumption, also reduces cost simultaneously.
In a preferred embodiment of the invention, storehouse photodiode also has photosensitive window, and described photosensitive window is through
Described passivation layer also exposes a part the 4th doped region.So that more light is irradiated on photosurface, reach to improve storehouse
The purpose of photodiode sensitivity.
In another preferred embodiment of the present invention, on photosensitive window, it is coated with anti-reflecting layer.This anti-reflecting layer both may be used
To be isolated with external environment by chip, the photoactive spectrum of storehouse photodiode can be revised again to a certain extent.
In order to realize the above-mentioned purpose of the present invention, according to the second aspect of the invention, the invention provides a kind of storehouse
The preparation method of photodiode, it comprises the steps:
S1: providing substrate, described substrate is lightly doped semi-conducting material；
S2: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms lightly doped second and mixes
Miscellaneous district, the doping type of described second doped region is contrary with the doping type of described Semiconductor substrate；
S3: aoxidizing, deposit, etch formation Chang Yang district, described Chang Yang district is positioned at the inner edge of described Semiconductor substrate and described
The outer rim of the second doped region；
S4: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms heavily doped first and mixes
Miscellaneous district and the 4th doped region, the doping type of described first doped region and the 4th doped region and the doping class of described Semiconductor substrate
Type is identical；
S5: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms the heavily doped 3rd and mixes
Miscellaneous district, the doping type of described 3rd doped region is contrary with the doping type of described Semiconductor substrate；
S6: formed metal level, described metal level is at least one layer, described metal level be formed at described Semiconductor substrate it
On, described metal level is connected with described first doped region, the 3rd doped region and the 4th doped region respectively.
In a preferred embodiment of the invention, have steps of after step S6:
S7: growth of passivation layer, described passivation layer is formed on described metal level and covers whole semiconductor region；
S8: photoetching, etches described passivation layer and forms fairlead, and the through described passivation layer of described fairlead also exposes a part
Metal level.
In another preferred embodiment of the present invention, have steps of between described step S7 and S8: photoetching, etching
Passivation layer forms photosensitive window, and the through described passivation layer of described photosensitive window also exposes a part the 4th doped region.So that more
Many light is irradiated on photosurface, reaches to improve the purpose of storehouse photodiode sensitivity.
In another preferred embodiment of the present invention, after forming described photosensitive window, described photosensitive window deposits
Form anti-reflecting layer.Chip both can be isolated by this anti-reflecting layer with external environment, can revise again storehouse to a certain extent
The photoactive spectrum of photodiode.
The preparation method of the present invention makes the storehouse photodiode photosensitive unit as ambient light sensor on a silicon substrate
Part, has saved chip area, reduces power consumption, reduces cost.
The additional aspect of the present invention and advantage will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage are from combining the accompanying drawings below description to embodiment and will become
Substantially with easy to understand, wherein:
Fig. 1 is the constructed profile of storehouse photodiode one embodiment of the present invention；
Fig. 2 is storehouse photodiode spectral response curve of the present invention；
Fig. 3 is the current relationship of storehouse photodiode PN junction of the present invention output；
Fig. 4 is the class human eye curve comparison diagram with human eye sensitometric curve of storehouse photodiode of the present invention output；
Fig. 5 to Figure 13 is the Making programme figure of storehouse photodiode of the present invention.
Reference:
1 Semiconductor substrate；2 first doped regions；3 second doped regions；4 the 3rd doped regions；
5 the 4th doped regions；6 Chang Yang districts；7 metal levels；8 passivation layers；9 photosensitive windows；
10 anti-reflecting layers；11 fairleads；12 sealing coats.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most from start to finish
Same or similar label represents same or similar element or has the element of same or like function.Below with reference to attached
The embodiment that figure describes is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " longitudinally ", " laterally ", " on ", D score, "front", "rear",
The orientation of the instruction such as "left", "right", " vertically ", " level ", " top ", " end " " interior ", " outward " or position relationship are for based on accompanying drawing institute
The orientation shown or position relationship, be for only for ease of and describe the present invention and simplify description rather than instruction or the dress of hint indication
Put or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit to the present invention
System.
In describing the invention, unless otherwise prescribed and limit, it should be noted that term " is installed ", " being connected ",
" connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can
Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
Fig. 1 is the constructed profile of storehouse photodiode of the present invention, is only each region that gives of signal in figure
Size, concrete size can be designed according to the requirement of device parameters.It can be seen from figure 1 that this storehouse photodiode bag
Including Semiconductor substrate 1, this Semiconductor substrate 1 is for being lightly doped, and the material of this Semiconductor substrate 1 can be to prepare storehouse photoelectricity two pole
Any semi-conducting material of pipe, specifically can be but not limited to silicon, germanium, GaAs.In Semiconductor substrate 1, it is formed with first mix
Miscellaneous district 2 and the second doped region 3, this first doped region 2 is heavy doping, the doping type phase of its doping type and Semiconductor substrate 1
With, the second doped region 3 is for being lightly doped, and its doping type is contrary with the doping type of Semiconductor substrate 1, in Semiconductor substrate 1
Being formed with Chang Yang district 6 at the outer rim of inner edge and the second doped region 3, the material in this Chang Yang district 6 can be but be not limited to silicon dioxide.
Being formed with the 3rd doped region 4 and the 4th doped region 5 in the second doped region 3, the 3rd doped region 4 and the 4th doped region 5 are
Heavy doping, the doping type of the 3rd doped region 4 and the doping type of the second doped region 3 are identical, the doping type of the 4th doped region 5
Contrary with the doping type of the second doped region 3.Being formed with metal level 7 on Semiconductor substrate 1, this metal level 7 is mixed with first
Miscellaneous district the 2, the 3rd doped region 4 is connected with the 4th doped region 5.Metal level 7 at least one layer, its number of plies can be entered according to requirement on devices
Row design, in the present embodiment, metal level is 3 layers, has silicon dioxide sealing coat 12 between adjacent two layers metal level.At gold
Belong to and be formed with passivation layer 8 and cover whole semiconductor region on layer, passivation layer 8 has the through fairlead 11 to metal level.
In one embodiment of the invention, Semiconductor substrate 1 is p-type, and the first doped region 2 and the 4th doped region 5 are p-type
Adulterate, and the second doped region 3 and the 3rd doped region 4 are n-type doping.
From the structure shown in Fig. 1, storehouse photodiode of the present invention is made up of, wherein two common cathode diodes
Formed a diode by semi-conducting material 1 and the second doped region 3 as substrate, be denoted as PD_nwell；By the second doped region 3
Form another diode with the 4th doped region 5, be denoted as PD_p+.Owing to the junction depth of PD_nwell is relatively deep, longer wavelengths of HONGGUANG
Higher in absorption efficiency herein, its anode output spectrum curve is as shown in dotted line in Fig. 2；And the junction depth of PD_p+ is shallower,
Blue light and green glow that wavelength is shorter are the highest in absorption efficiency herein, its negative electrode output spectrum curve such as Fig. 2 stage casing shape dotted line institute
Show.By such as Fig. 3 operation relation, just can get a curve of spectrum similar to sensitometric characteristic of human eyes, as illustrated in solid line in figure 2.
Use the contrast of the curve of spectrum that obtains as photo-sensitive cell of storehouse photodiode and human eye sensitometric curve as shown in Figure 4.
In the present embodiment, in order to provide the sensitivity of storehouse photodiode, storehouse photodiode of the present invention is also
There is photosensitive window 9, this through passivation layer of photosensitive window 98 until semi-conducting material and expose a part the 4th doped region 5,
Will remove by passivation layer 8 on storehouse photodiode photosurface, make more light be irradiated on photosurface, thus reach to carry
The purpose of high storehouse photodiode sensitivity.Meanwhile, photosensitive window 9 is also covered with anti-reflecting layer 10, this anti-reflecting layer
The material of 10 can be but be not limited to silicon dioxide or silicon nitride.The design of this anti-reflecting layer both can be by chip and external environment
Isolation, can revise again the photoactive spectrum of storehouse photodiode to a certain extent.
For forming the structure shown in Fig. 1, the invention provides the preparation method of a kind of storehouse photodiode, it includes
Following steps:
S1: providing substrate 1, this substrate is lightly doped semi-conducting material；
S2: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms lightly doped second and mixes
Miscellaneous district 3, the doping type of this second doped region 3 is contrary with the doping type of Semiconductor substrate 1；
S3: aoxidize, deposit, etch formation Chang Yang district 6, this Chang Yang district 6 is positioned at inner edge and second doping of Semiconductor substrate 1
The outer rim in district 3；
S4: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms heavily doped first and mixes
Miscellaneous district 2 and the 4th doped region 5, the doping type of this first doped region 2 and the 4th doped region 5 and the doping class of Semiconductor substrate 1
Type is identical；
S5: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms the heavily doped 3rd and mixes
Miscellaneous district 4, the doping type of the 3rd doped region 4 is contrary with the doping type of Semiconductor substrate 1；
S6: form metal level 7, this metal level 7 at least a layer, described metal level 7 is formed on Semiconductor substrate 1,
This metal level 7 is connected with the first doped region the 2, the 3rd doped region 4 and the 4th doped region 5 respectively.When metal level 7 is more than two-layer,
There is between adjacent two layers metal level sealing coat 12.
In the present embodiment, can also have steps of after step S6:
S7: growth of passivation layer 8, this passivation layer 8 is formed on metal level 7 and covers whole semiconductor region；
S8: photoetching, Etch Passivation 8 forms fairlead 11, and this through passivation layer of fairlead 11 8 is until exposing part gold
Belong to layer 7.
In the present embodiment, can also have steps of between step S7 and S8: photoetching, Etch Passivation 8 shape
Becoming photosensitive window 9, the through passivation layer of photosensitive window 98 also exposes a part the 4th doped region 5, after forming photosensitive window 9,
On photosensitive window 9, deposit forms anti-reflecting layer 10.The material of this anti-reflecting layer 10 can be but be not limited to silicon dioxide or nitridation
Silicon.
In the present embodiment, the first doped region 2 and the 4th doped region 5 are integrally formed.The embodiment party that the present invention is other
In formula, the first doped region 2 and the 4th doped region 5 are successively formed by photoetching, ion implanting, diffusion, the step of annealing.
The storehouse photodiode shown in Fig. 1 can be prepared according to the step of Fig. 5 to Figure 13, be in p-type shown in figure
Storehouse photodiode is made, for the device of preparation in n-type semiconductor, according to contrary doping class on semi-conducting material
Type adulterates.
As it is shown in figure 5, first provide a P-type semiconductor substrate 1, this Semiconductor substrate 1 in, then pass through gluing, front
Dry, expose, develop, lithography step that post bake, burn into remove photoresist produces the figure of the second doped region 3, more ion implanted, move back
Fire forms the second doped region 3, this second doped region 3 for being lightly doped, the doping type phase of its doping type and Semiconductor substrate 1
Instead, as shown in Figure 6.Then as it is shown in fig. 7, pass through to aoxidize, deposit, be etched in inner edge and second doped region 3 of Semiconductor substrate 1
Outer rim at formed Chang Yang district 6, the material in this Chang Yang district 6 can be but be not limited to silicon dioxide.Then, made by optical graving
First doped region 2 and the figure of the 4th doped region 5, more ion implanted, annealing formation the first doped region 2 and the 4th doped region 5,
This first doped region 2 and the 4th doped region 5 are heavy doping, and its doping type is identical with the doping type of Semiconductor substrate 1, such as figure
Shown in 8.Then as it is shown in figure 9, make the 3rd doped region 4 figure by optical graving more ion implanted, annealing forms the 3rd and mixes
Miscellaneous district 4, the 3rd doped region 4 is heavy doping, and its doping type is contrary with the doping type of Semiconductor substrate 1.Need explanation
It is that above only giving forms a kind of method of structure shown in Fig. 9, and above processing step is through suitable exchange, also
The structure shown in Fig. 9 can be obtained.Such as can be initially formed the 3rd doped region 4, form the first doped region 2 and the 4th the most again and mix
Miscellaneous district 5, and the first doped region 2 and the 4th doped region 5 may be integrally formed, it is possible to it is formed separately.
As shown in Figure 10, by metal evaporation, etch, by hole formed metal level 7, in present embodiment, metal level 7 is
Three layers, between adjacent two layers metal level, there is sealing coat.Growth of passivation layer 8 the most on the metal layer.The most as shown in figure 11, carve
Eating away covers the passivation layer 8 on storehouse diode photosurface and forms photosensitive window 9, is then formed certain on photosensitive window 9
The anti-reflecting layer 10 of thickness, the material of this anti-reflecting layer 10 can be but be not limited to silicon dioxide or silicon nitride, and growth pattern can
The method thought but be not limited to chemical vapor deposition, as shown in figure 12.Finally, as shown in figure 13, photoetching, on etching sheet metal
Passivation layer 8, makes electrode exposed chip surface.
The present invention utilizes existing CMOS technology, makes storehouse diode structure on a silicon substrate as ambient light sensor
Photo-sensitive cell, it is not necessary to use as prior art discrete two kind photodiode jointly act on realize ambient light inspection
Survey, saved chip area, reduced cost.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
Example " or the description of " some examples " etc. means to combine this embodiment or example describes specific features, structure, material or spy
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.And, the specific features of description, structure, material or feature can be any
One or more embodiments or example in combine in an appropriate manner.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
These embodiments can be carried out multiple change in the case of departing from the principle of the present invention and objective, revise, replace and modification, this
The scope of invention is limited by claim and equivalent thereof.
Claims (12)
1. a storehouse photodiode, it is characterised in that including:
Semiconductor substrate, described Semiconductor substrate is for being lightly doped；
First doped region, the second doped region, the 3rd doped region and the 4th doped region, described first doped region and the second doped region shape
Becoming in described Semiconductor substrate, the doping type of described first doped region is identical with the doping type of described Semiconductor substrate,
The doping type of described second doped region is contrary with the doping type of described Semiconductor substrate, and described 3rd doped region and the 4th is mixed
Miscellaneous district is formed in described second doped region, the doping type of described 3rd doped region and the doping type of described second doped region
Identical, the doping type of described 4th doped region is contrary with the doping type of described second doped region；
Wherein, by photoetching, carrying out ion implanting, and spread in the case of mask is sheltered, annealing is formed lightly doped described
Second doped region, by photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms heavily doped the
One doped region and the 4th doped region, by photoetching, carry out ion implanting in the case of mask is sheltered, and spread, and annealing is formed
Heavily doped 3rd doped region；
Chang Yang district, described Chang Yang district by aoxidize, deposit, etch formation and be positioned at the inner edge and described the of described Semiconductor substrate
At the outer rim of two doped regions；
At least one of which metal level, described metal level is formed on described Semiconductor substrate, and described metal level is respectively with described
One doped region, the 3rd doped region and the 4th doped region are connected；
Passivation layer, described passivation layer is formed on described metal level and covers whole semiconductor region；
Photosensitive window, described photosensitive window passes through photoetching, Etch Passivation formation, and through described passivation layer and exposes a part
4th doped region, on described photosensitive window, deposit is formed with anti-reflecting layer；
Fairlead, described fairlead passes through photoetching, etches the formation of described passivation layer, and the through described passivation layer of described fairlead is also
Expose a part of metal level.
2. storehouse photodiode as claimed in claim 1, it is characterised in that the material of described anti-reflecting layer is silicon dioxide
Or silicon nitride.
3. storehouse photodiode as claimed in claim 1, it is characterised in that the material in described Chang Yang district is silicon dioxide.
4. storehouse photodiode as claimed in claim 1, it is characterised in that when described metal level is more than two-layer, adjacent
There is between two metal layers sealing coat.
5. storehouse photodiode as claimed in claim 1, it is characterised in that described Semiconductor substrate is p-type, described first
Doped region and described 4th doped region are p-type doping, and described second doped region and described 3rd doped region are n-type doping.
6. the preparation method of a storehouse photodiode, it is characterised in that comprise the steps:
S1: providing substrate, described substrate is lightly doped semi-conducting material；
S2: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms lightly doped second doped region,
The doping type of described second doped region is contrary with the doping type of described Semiconductor substrate；
S3: aoxidizing, deposit, etch formation Chang Yang district, described Chang Yang district is positioned at the inner edge and described second of described Semiconductor substrate
The outer rim of doped region；
S4: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms heavily doped first doped region
With the 4th doped region, the doping type of described first doped region and the 4th doped region and the doping type phase of described Semiconductor substrate
With；
S5: photoetching, carries out ion implanting in the case of mask is sheltered, and spreads, and annealing forms heavily doped 3rd doped region,
The doping type of described 3rd doped region is contrary with the doping type of described Semiconductor substrate；
S6: forming metal level, described metal level is at least one layer, and described metal level is formed on described Semiconductor substrate, institute
State metal level to be connected with described first doped region, the 3rd doped region and the 4th doped region respectively；
S7: growth of passivation layer, described passivation layer is formed on described metal level and covers whole semiconductor region；
S8, photoetching, Etch Passivation forms photosensitive window, and the through described passivation layer of described photosensitive window also exposes a part the 4th
Doped region, after forming described photosensitive window, on described photosensitive window, deposit forms anti-reflecting layer；
S9: photoetching, etches described passivation layer and forms fairlead, and the through described passivation layer of described fairlead also exposes a part of metal
Layer.
7. the preparation method of storehouse photodiode as claimed in claim 6, it is characterised in that the material of described anti-reflecting layer
For silicon dioxide or silicon nitride.
8. the preparation method of storehouse photodiode as claimed in claim 6, it is characterised in that when described metal level is more than two
During layer, between adjacent two layers metal level, growth has sealing coat.
9. the preparation method of storehouse photodiode as claimed in claim 6, it is characterised in that described first doped region and the
Four doped regions are integrally formed.
10. the preparation method of storehouse photodiode as claimed in claim 6, it is characterised in that described first doped region and
4th doped region passes through photoetching, ion implanting, diffusion, and the step of annealing is successively formed.
The preparation method of 11. storehouse photodiodes as claimed in claim 6, it is characterised in that the material of described field oxygen is
Silicon dioxide.
The preparation method of 12. storehouse photodiodes as claimed in claim 6, it is characterised in that described Semiconductor substrate is P
Type, described first doped region and described 4th doped region are p-type doping, and described second doped region and described 3rd doped region are
N-type doping.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110442409.5A CN103178070B (en) | 2011-12-26 | A kind of storehouse photodiode and preparation method thereof |
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|---|---|---|---|
| CN201110442409.5A CN103178070B (en) | 2011-12-26 | A kind of storehouse photodiode and preparation method thereof |
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| CN103178070A CN103178070A (en) | 2013-06-26 |
| CN103178070B true CN103178070B (en) | 2016-12-14 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4318115A (en) * | 1978-07-24 | 1982-03-02 | Sharp Kabushiki Kaisha | Dual junction photoelectric semiconductor device |
| US6111300A (en) * | 1998-12-01 | 2000-08-29 | Agilent Technologies | Multiple color detection elevated pin photo diode active pixel sensor |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4318115A (en) * | 1978-07-24 | 1982-03-02 | Sharp Kabushiki Kaisha | Dual junction photoelectric semiconductor device |
| US6111300A (en) * | 1998-12-01 | 2000-08-29 | Agilent Technologies | Multiple color detection elevated pin photo diode active pixel sensor |
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