CN103165442A - 背面图形化的方法 - Google Patents
背面图形化的方法 Download PDFInfo
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- CN103165442A CN103165442A CN2011104126607A CN201110412660A CN103165442A CN 103165442 A CN103165442 A CN 103165442A CN 2011104126607 A CN2011104126607 A CN 2011104126607A CN 201110412660 A CN201110412660 A CN 201110412660A CN 103165442 A CN103165442 A CN 103165442A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 105
- 239000010703 silicon Substances 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000227 grinding Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 238000012856 packing Methods 0.000 claims description 12
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000206 photolithography Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110412660.7A CN103165442B (zh) | 2011-12-12 | 2011-12-12 | 背面图形化的方法 |
US13/712,059 US8772125B2 (en) | 2011-12-12 | 2012-12-12 | Method of double-sided patterning |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110412660.7A CN103165442B (zh) | 2011-12-12 | 2011-12-12 | 背面图形化的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103165442A true CN103165442A (zh) | 2013-06-19 |
CN103165442B CN103165442B (zh) | 2015-08-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110412660.7A Active CN103165442B (zh) | 2011-12-12 | 2011-12-12 | 背面图形化的方法 |
Country Status (2)
Country | Link |
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US (1) | US8772125B2 (zh) |
CN (1) | CN103165442B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014206174A1 (zh) * | 2013-06-24 | 2014-12-31 | 无锡华润上华半导体有限公司 | 非穿通型反向导通绝缘栅双极型晶体管的制造方法 |
CN104576310A (zh) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN105502284A (zh) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | 一种晶圆背面对准的工艺集成方法 |
CN107634027A (zh) * | 2017-08-25 | 2018-01-26 | 上海微阱电子科技有限公司 | 一种用于三维集成工艺的光刻对准方法 |
CN109534283A (zh) * | 2018-11-15 | 2019-03-29 | 赛莱克斯微***科技(北京)有限公司 | 一种微机电器件制备方法及装置 |
CN110600414A (zh) * | 2019-08-01 | 2019-12-20 | 中国科学院微电子研究所 | 晶圆异构对准方法及装置 |
CN111952364A (zh) * | 2019-05-14 | 2020-11-17 | 芯恩(青岛)集成电路有限公司 | 一种逆导型绝缘栅双极型晶体管及其制备方法 |
CN113161293A (zh) * | 2020-12-30 | 2021-07-23 | 上海朕芯微电子科技有限公司 | 新型功率器件及其划片方法、芯片级封装方法和封装结构 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10833021B2 (en) * | 2017-06-29 | 2020-11-10 | Alpha And Omega Semiconductor (Cayman) Ltd. | Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer |
CN111599754B (zh) * | 2020-06-19 | 2022-03-15 | 绍兴同芯成集成电路有限公司 | 一种超薄晶圆加工工艺 |
CN111710647B (zh) * | 2020-07-06 | 2022-03-15 | 绍兴同芯成集成电路有限公司 | 一种开窗孔双面电镀厚铜膜工艺 |
Citations (5)
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US20030148635A1 (en) * | 2000-07-07 | 2003-08-07 | Norio Hasegawa | Method of manufacturing integrated circuit |
CN1567532A (zh) * | 2003-07-03 | 2005-01-19 | 旺宏电子股份有限公司 | 叠合标记的结构以及其形成方法 |
CN1938851A (zh) * | 2004-03-25 | 2007-03-28 | 英飞凌科技股份公司 | 使用辅助凹槽特别是使用对准标记制造集成电路装置的方法及集成电路装置 |
JP2007273971A (ja) * | 2006-03-08 | 2007-10-18 | Asml Netherlands Bv | 改良されたリソグラフィ用アライメント方法及びシステム |
CN101789386A (zh) * | 2009-01-24 | 2010-07-28 | 南亚科技股份有限公司 | 晶片对准的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008007173A1 (en) * | 2006-07-06 | 2008-01-17 | Freescale Semiconductor, Inc. | Wafer and method of forming alignment markers |
JP2008205091A (ja) * | 2007-02-19 | 2008-09-04 | Fujifilm Corp | 電子デバイス及びその製造方法並びに電子デバイス用シリコン基板 |
JP2010171038A (ja) * | 2009-01-20 | 2010-08-05 | Toshiba Corp | 固体撮像装置およびその製造方法 |
-
2011
- 2011-12-12 CN CN201110412660.7A patent/CN103165442B/zh active Active
-
2012
- 2012-12-12 US US13/712,059 patent/US8772125B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148635A1 (en) * | 2000-07-07 | 2003-08-07 | Norio Hasegawa | Method of manufacturing integrated circuit |
CN1567532A (zh) * | 2003-07-03 | 2005-01-19 | 旺宏电子股份有限公司 | 叠合标记的结构以及其形成方法 |
CN1938851A (zh) * | 2004-03-25 | 2007-03-28 | 英飞凌科技股份公司 | 使用辅助凹槽特别是使用对准标记制造集成电路装置的方法及集成电路装置 |
JP2007273971A (ja) * | 2006-03-08 | 2007-10-18 | Asml Netherlands Bv | 改良されたリソグラフィ用アライメント方法及びシステム |
CN101789386A (zh) * | 2009-01-24 | 2010-07-28 | 南亚科技股份有限公司 | 晶片对准的方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014206174A1 (zh) * | 2013-06-24 | 2014-12-31 | 无锡华润上华半导体有限公司 | 非穿通型反向导通绝缘栅双极型晶体管的制造方法 |
CN104576310A (zh) * | 2013-10-16 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN104576310B (zh) * | 2013-10-16 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 应用于半导体背面对准和导通的制作方法 |
CN105502284A (zh) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | 一种晶圆背面对准的工艺集成方法 |
CN107634027A (zh) * | 2017-08-25 | 2018-01-26 | 上海微阱电子科技有限公司 | 一种用于三维集成工艺的光刻对准方法 |
CN109534283A (zh) * | 2018-11-15 | 2019-03-29 | 赛莱克斯微***科技(北京)有限公司 | 一种微机电器件制备方法及装置 |
CN109534283B (zh) * | 2018-11-15 | 2020-09-25 | 赛莱克斯微***科技(北京)有限公司 | 一种微机电器件制备方法及装置 |
CN111952364A (zh) * | 2019-05-14 | 2020-11-17 | 芯恩(青岛)集成电路有限公司 | 一种逆导型绝缘栅双极型晶体管及其制备方法 |
CN111952364B (zh) * | 2019-05-14 | 2024-01-26 | 芯恩(青岛)集成电路有限公司 | 一种逆导型绝缘栅双极型晶体管及其制备方法 |
CN110600414A (zh) * | 2019-08-01 | 2019-12-20 | 中国科学院微电子研究所 | 晶圆异构对准方法及装置 |
CN113161293A (zh) * | 2020-12-30 | 2021-07-23 | 上海朕芯微电子科技有限公司 | 新型功率器件及其划片方法、芯片级封装方法和封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US20130149836A1 (en) | 2013-06-13 |
CN103165442B (zh) | 2015-08-19 |
US8772125B2 (en) | 2014-07-08 |
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