CN103151907A - High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method - Google Patents
High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method Download PDFInfo
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- CN103151907A CN103151907A CN2011104025146A CN201110402514A CN103151907A CN 103151907 A CN103151907 A CN 103151907A CN 2011104025146 A CN2011104025146 A CN 2011104025146A CN 201110402514 A CN201110402514 A CN 201110402514A CN 103151907 A CN103151907 A CN 103151907A
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Abstract
The invention relates to a high-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method. Transistor-transistor logic (TTL) type MOSFET drive signals are input into a negative terminal of a comparator U2 through an input unit of an optoelectronic isolator U1, and after being compared, the signals are input into base electrodes of a geminate transistor driver Q1 and a geminate transistor driver Q2. An emitter-follower of the Q1 and an emitter-follower of the Q2 are connected, and a high-power MOSFET is driven through a current-limiting protection resistor R6. Attention needs to be paid to that output of the high-power MOSFET is connected with the ground of a drive circuit to form a drive current circuit. The high-power MOSFET driving method has the advantages of being high in driving capability, completely isolated between electricity and gas, capable of driving one or dozens of or one hundred high-power MOSFETs to work in parallel simultaneously, stable and reliable in performance, and capable of giving play to control superiorities especially in precision heavy-current closed loop occasions.
Description
Technical field
The present invention relates to a kind of high-power MOSFET driving method, belong to Current Control and voltage frequency conversion detection field.
Background technology
Current, high-power MOSFET is used has certain particularity, especially high voltage occasion, its control both can be done as the class relay system, also can be as constant current charge closed-loop control core, usually, the driving voltage of high-power MOSFET is in light current voltage negative 10 to positive 30V.Its forward voltage is to open high-power MOSFET tube, oppositely adds negative pressure mainly for reliable turn-off, and due to its design particularity, simultaneously, high-power MOSFET is of a great variety, therefore needs a general driving method, drives the high-power MOSFET tube reliably working.
Summary of the invention
The present invention relates to a kind of high-power MOSFET driving method, to realize the reliable driving to all kinds of high-power MOSFETs.
for realizing above-mentioned purpose, the present invention adopts following technical scheme: the MOSFET of TTL formula drives signal, through low voltage voltage and current-limiting resistance R1, then through the input unit of photoisolator U1, realize the isolation of input signal, output signal is through positive supply, again through output current limiting resistance R 2, again through the output unit of photoisolator U1, the access negative ground, the positive-negative power here is the power supply through isolation of a special use, through isolating defeated signal again by current-limiting resistance R3, be input to the negative terminal of comparator U2, note, the anode of comparator U2 is received ground through resistance R 3, signal is after relatively, again through current-limiting resistance R5, be input on the base stage to pipe driver Q1 and Q2, the emitter-base bandgap grading output of Q1 and Q2 links, then through current-limiting protection resistance R 6, drive again high-power MOSFET, note, the output of high-power MOSFET and the ground of drive circuit join, formation drive current loop.
It is large that the present invention has driving force, and electric isolation fully can drive one or dozens of to hundred a high-power MOSFET while parallel operation, and is stable and reliable for performance, especially in the large current closed-loop occasion of precision, more can bring into play its control advantage.
Description of drawings:
Accompanying drawing 1 is the former figure of circuit working of the present invention
Embodiment:
In order to make technical scheme of the present invention clearer, below in conjunction with drawings and Examples, the present invention is described in more detail, and instantiation described herein only in order to explain the present invention, is not limited to the present invention.
Embodiment:
see also shown in accompanying drawing 1, the MOSFET of TTL formula drives signal, through low voltage voltage and current-limiting resistance R1, then through the input unit of photoisolator U1, realize the isolation of input signal, output signal is through positive supply, again through output current limiting resistance R 2, again through the output unit of photoisolator U1, the access negative ground, the positive-negative power here is the power supply through isolation of a special use, through isolating defeated signal again by current-limiting resistance R3, be input to the negative terminal of comparator U2, note, the anode of comparator U2 is received ground through resistance R 3, signal is after relatively, again through current-limiting resistance R5, be input on the base stage to pipe driver Q1 and Q2, the emitter-base bandgap grading output of Q1 and Q2 links, then through current-limiting protection resistance R 6, drive again high-power MOSFET, note, the output of high-power MOSFET and the ground of drive circuit join, formation drive current loop.MOSFET for the TTL formula of inputting drives signal, it can be the current potential mode, major control is in high-current switch, it can be also the signal of integrated form, when being integrated signal, at this moment the highly sensitive device of the general selection of photoelectricity isolated tube is to make the quick and precisely response of coupling to integrated signal.
Claims (5)
1. the present invention relates to a kind of high-power MOSFET driving method, have following characteristics: the MOSFET of TTL formula drives signal, through low voltage voltage and current-limiting resistance R1, then through the input unit of photoisolator U1, realize the isolation of input signal, output signal is through positive supply, again through output current limiting resistance R 2, again through the output unit of photoisolator U1, the access negative ground, the positive-negative power here is the power supply through isolation of a special use, signal through isolation output passes through current-limiting resistance R3 again, be input to the negative terminal of comparator U2, note, the anode of comparator U2 is received ground through resistance R 3, signal is after relatively, again through current-limiting resistance R5, be input on the base stage to pipe driver Q1 and Q2, the emitter-base bandgap grading output of Q1 and Q2 links, then through current-limiting protection resistance R 6, drive again high-power MOSFET, note, the output of high-power MOSFET and the ground of drive circuit join, formation drive current loop.
2. a kind of high-power MOSFET driving method according to claim 1, is characterized in that: have photoisolator U1, realize the isolation of input signal.
3. a kind of high-power MOSFET driving method according to claim 1, it is characterized in that: have a comparator U2, it can be dedicated comparator, can be also the comparator that is made of amplifier.
4. a kind of high-power MOSFET driving method according to claim 1, is characterized in that: have pipe driver Q1 and Q2, be used for enlarging fan-out capability.
5. a kind of high-power MOSFET driving method according to claim 1, it is characterized in that: the output of high-power MOSFET and the ground of drive circuit join, and form the drive current loop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011104025146A CN103151907A (en) | 2011-12-07 | 2011-12-07 | High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011104025146A CN103151907A (en) | 2011-12-07 | 2011-12-07 | High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method |
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| CN103151907A true CN103151907A (en) | 2013-06-12 |
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| CN2011104025146A Pending CN103151907A (en) | 2011-12-07 | 2011-12-07 | High-power metal-oxide-semiconductor field effect transistor (MOSFET) driving method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101866A (en) * | 2014-08-04 | 2014-10-15 | 成都雷电微力科技有限公司 | Pulse modulating system of radar system |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
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| CN202059318U (en) * | 2011-04-26 | 2011-11-30 | 刘闯 | Isolated bridge type high-frequency MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) drive circuit |
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| KR20000021799A (en) * | 1998-09-30 | 2000-04-25 | 윤종용 | Circuit for compensating switching time of optic coupling device |
| CN2836340Y (en) * | 2005-11-02 | 2006-11-08 | 张继科 | IGBT module drive circuit |
| CN101393422A (en) * | 2007-09-19 | 2009-03-25 | 佛山市富士宝电器科技有限公司 | Programmable IGBT driving circuit apparatus of electromagnetic stove |
| CN101409516A (en) * | 2008-07-16 | 2009-04-15 | 杭州中信网络自动化有限公司 | Simple network-connecting generation inverter |
| CN101640526A (en) * | 2009-08-19 | 2010-02-03 | 广州金升阳科技有限公司 | IGBT driving circuit embedded with isolating source |
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| CN202059318U (en) * | 2011-04-26 | 2011-11-30 | 刘闯 | Isolated bridge type high-frequency MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) drive circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104101866A (en) * | 2014-08-04 | 2014-10-15 | 成都雷电微力科技有限公司 | Pulse modulating system of radar system |
| CN104101866B (en) * | 2014-08-04 | 2016-09-21 | 成都雷电微力科技有限公司 | A kind of modulation pulse system in radar system |
| CN109149913A (en) * | 2017-06-15 | 2019-01-04 | 上海铼钠克数控科技股份有限公司 | Metal-oxide-semiconductor driving circuit |
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Application publication date: 20130612 |