CN103148620A - Solar spectrum selective absorption film and production method thereof - Google Patents

Solar spectrum selective absorption film and production method thereof Download PDF

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Publication number
CN103148620A
CN103148620A CN2013100047840A CN201310004784A CN103148620A CN 103148620 A CN103148620 A CN 103148620A CN 2013100047840 A CN2013100047840 A CN 2013100047840A CN 201310004784 A CN201310004784 A CN 201310004784A CN 103148620 A CN103148620 A CN 103148620A
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China
Prior art keywords
dielectric layer
semi
metal layer
layer
transparent metal
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CN2013100047840A
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Chinese (zh)
Inventor
刘小军
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HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd
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HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd
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Priority to CN2013100047840A priority Critical patent/CN103148620A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

Abstract

The invention discloses a solar spectrum selective absorption film and a production method thereof. The solar spectrum selective absorption film comprises a filmed substrate, wherein the surface of the filmed substrate is sequentially provided with a middle dielectric layer, a semitransparent metal layer and a surface dielectric layer from inside to outside, the filmed substrate is Al or Cu, the middle dielectric layer and the surface dielectric layer are coatings containing silicon nitride or silicon oxynitride, and the semitransparent metal layer is a chromium-containing coating. The solar spectrum selective absorption film disclosed by the invention has the following technical effects that the solar spectrum selective absorption film has high solar absorptivity and low emissivity, the color of the film can be regulated according to needs, and a solar water heating system and a building are coordinated in color hues.

Description

A kind of solar spectrum selective absorbing film and production method thereof
Technical field
The invention belongs to thin film technique and thin-film material field, relate to the adjustable selective solar absorbing film of a kind of color.
Background technology
Solar selectively absorbing coating is the core component of solar energy heat collection equipment, play dual parts to absorb solar radiation energy and to the heat-transfer working medium transferring heat of heat collector, main solar selectively absorbing coating has black chromium, black nickel, anodized coating and blue titanium plated film etc. in the market, existing coating color is single, not attractive in appearance, lack ornamental solar water heating system and the building of can not making harmonious on tone.
Summary of the invention
The purpose of this invention is to provide a kind of solar spectrum selective absorbing film.
Technical scheme of the present invention is, a kind of solar spectrum selective absorbing film, comprise the overlay film matrix, at overlay film matrix surface middle dielectric layer, semi-transparent metal layer, surface media successively from inside to outside, described overlay film matrix is Al or Cu, described middle dielectric layer and surface media are the coating of silicon nitride comprising or silicon oxynitride, and described semi-transparent metal layer is the coating that contains chromium.
The thickness of overlay film matrix is 0.05-0.5mm, and middle dielectric layer and surface dielectric layer thickness are 30~100nm, and the semi-transparent metals layer thickness is 1~50nm.
Increase one or two " semi-transparent metal layer/dielectric layer " alternating layer outside surface media.
The semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer is the coating that contains chromium, and dielectric layer is the coating of silicon nitride comprising or silicon oxynitride.
The thickness of the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer is 1~30nm, and thickness of dielectric layers is 30~100nm.
A kind of production method of solar spectrum selective absorbing film:
The present invention has following technique effect, and the solar absorptance of solar spectrum selective absorbing film is high, and emissivity is low, and the film color can be regulated as required, can make solar water heating system and building harmonious on tone.
Description of drawings
Fig. 1 is the layer structure schematic diagram of the solar spectrum selective absorbing film of blueness.
Fig. 2 is the layer structure schematic diagram of the solar spectrum selective absorbing film of blueness.
Fig. 3 is the layer structure schematic diagram of the solar spectrum selective absorbing film of black.
Fig. 4 is the layer structure schematic diagram of the solar spectrum selective absorbing film of purple
The specific embodiment
Embodiment 1
As shown in Figure 1, a kind of solar spectrum selective absorbing film of blueness, comprise an aluminium overlay film matrix 1, on aluminium overlay film matrix 1 surface from inside to outside successively cladding thickness be the silicon nitride middle dielectric layer 2 of 60nm, the semi-transparent metals chromium layer 3 that thickness is 15nm, the silicon oxynitride surface media 4 that thickness is 68nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck silicon nitride middle dielectric layer on matrix, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 45A, and sputtering voltage is 570V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
E. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 10A, and sputtering voltage is 510V, and sputter gas is Ar;
F. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 47A, and sputtering voltage is 600V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O 2Account for 7%.
The solar absorptance of the solar spectrum selective absorbing film that this is blue is: 94.5%, and emissivity is: 5%.
Embodiment 2
as shown in Figure 2, a kind of solar spectrum selective absorbing film of blueness, comprise an aluminium overlay film matrix 1, on aluminium overlay film matrix 1 surface from inside to outside successively cladding thickness be the silicon nitride middle dielectric layer 2 of 60nm, thickness is the semi-transparent metals chromium layer 3 of 23nm, thickness is the silicon nitride surface dielectric layer 4 of 58nm, at " semi-transparent metal layer/dielectric layer " alternating layer 5 of the outer increase of surface media 4, the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer 5 is the coating that contains chromium, thickness is 10nm, dielectric layer is the coating of silicon nitride comprising, thickness is 59nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck silicon nitride middle dielectric layer on matrix, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 45A, and sputtering voltage is 570V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
E. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.13Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 15A, and sputtering voltage is 800V, and sputter gas is Ar;
F. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 41A, and sputtering voltage is 525V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
G. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.13Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 7A, and sputtering voltage is 440V, and sputter gas is Ar;
H. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 41A, and sputtering voltage is 530V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%.
The solar absorptance of the solar spectrum selective absorbing film that this is blue is: 96.5%, and emissivity is: 6%.
Embodiment 3
As shown in Figure 3, a kind of solar spectrum selective absorbing film of black, comprise an aluminium overlay film matrix 1, on aluminium overlay film matrix 1 surface from inside to outside successively cladding thickness be the silicon nitride middle dielectric layer 2 of 71nm, the semi-transparent metals chromium layer 3 that thickness is 19nm, the silicon oxynitride surface media 4 that thickness is 56nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck silicon nitride middle dielectric layer on matrix, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 49A, and sputtering voltage is 624V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, and N2 accounts for 57%.
E. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 13A, and sputtering voltage is 710V, and sputter gas is Ar;
F. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 40A, and sputtering voltage is 520V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O2 and account for 7%.
The solar absorptance of the solar spectrum selective absorbing film of this black is: 93.5%, and emissivity is: 6%.
Embodiment 4
As shown in Figure 4, the solar spectrum selective absorbing film of a kind of purple, comprise an aluminium overlay film matrix 1, on aluminium overlay film matrix 1 surface from inside to outside successively cladding thickness be the silicon nitride middle dielectric layer 2 of 53nm, the semi-transparent metals chromium layer 3 that thickness is 10nm, the silicon oxynitride surface media 4 that thickness is 72nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck silicon nitride middle dielectric layer on matrix, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 37A, and sputtering voltage is 465V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, and N2 accounts for 57%;
E. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 7A, and sputtering voltage is 440V, and sputter gas is Ar;
F. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 40A, and sputtering voltage is 628V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O 2Account for 7%.
The solar absorptance of the solar spectrum selective absorbing film of this purple is: 95%, and emissivity is: 5%.

Claims (8)

1. solar spectrum selective absorbing film, comprise overlay film matrix (1), middle dielectric layer (2), semi-transparent metal layer (3), surface media (4) successively from inside to outside on overlay film matrix (1) surface, it is characterized in that: described overlay film matrix (1) is Al or Cu, described middle dielectric layer (2) and surface media (4) are the coating of silicon nitride comprising or silicon oxynitride, and described semi-transparent metal layer (3) is for containing the coating of chromium.
2. a kind of solar spectrum selective absorbing film according to claim 1, it is characterized in that: the thickness of overlay film matrix (1) is 0.05-0.5mm, middle dielectric layer (2) and surface media (4) thickness are 30 ~ 100nm, and semi-transparent metal layer (3) thickness is 1 ~ 50nm.
3. a kind of solar spectrum selective absorbing film according to claim 1, is characterized in that: increase one or two " semi-transparent metal layer/dielectric layer " alternating layer (5) outside surface media (4).
4. a kind of solar spectrum selective absorbing film according to claim 3, it is characterized in that: the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer (5) is the coating that contains chromium, dielectric layer is the coating of silicon nitride comprising or silicon oxynitride.
5. a kind of solar spectrum selective absorbing film according to claim 3, it is characterized in that: the thickness of the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer (5) is 1 ~ 30nm, thickness of dielectric layers is 30 ~ 100nm.
6. the preparation method of coating for selective absorption according to claim 1, is characterized in that, carries out according to the following steps successively:
A. Al or Cu matrix are carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, according to the structure of plate core of solar heat-collecting, prepare successively dielectric layer, semi-transparent metal layer, dielectric layer on matrix, perhaps increase again one or two " semi-transparent metal layer, dielectric layer " alternating layer (5).
7. the preparation of dielectric layer according to claim 6 is characterized in that: vacuum is 0.05 ~ 2Pa, and sputter gas is Ar, and reacting gas is N 2Or N 2Mix O 2, Ar accounts for 30 ~ 50% of all gas proportion, N 2Account for 40 ~ 60%, oxygen accounts for 1 ~ 15%, and the gas sputtering target material is the twin cathode Si target that intermediate frequency power supply is controlled, and sputtering current is 30 ~ 75A, and sputtering voltage is 450 ~ 1000V.
8. the preparation of semi-transparent metal layer according to claim 6 is characterized in that: vacuum is 0.05 ~ 2Pa, and sputter gas is Ar, and sputtering target material is twin cathode Cr target, and sputtering current is 2 ~ 30A, and cathode voltage is 300 ~ 1000V.
CN2013100047840A 2013-01-07 2013-01-07 Solar spectrum selective absorption film and production method thereof Pending CN103148620A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109336413A (en) * 2018-12-18 2019-02-15 浙江旗滨节能玻璃有限公司 A kind of ocean blue colour thermal reflection coated glass and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1208274C (en) * 2001-01-09 2005-06-29 上海耀华皮尔金顿玻璃股份有限公司 Absorption-type low-radiation film coated glass
CN100439092C (en) * 2006-06-08 2008-12-03 复旦大学 Light heat energy conversion device having metal and non-metal multilayer film structure
CN101769648A (en) * 2008-12-30 2010-07-07 深圳市鹏桑普太阳能股份有限公司 Selective coating for absorbing solar light and heat
CN203163316U (en) * 2013-01-07 2013-08-28 湖南兴业太阳能科技有限公司 Solar spectrum selective absorbing film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1208274C (en) * 2001-01-09 2005-06-29 上海耀华皮尔金顿玻璃股份有限公司 Absorption-type low-radiation film coated glass
CN100439092C (en) * 2006-06-08 2008-12-03 复旦大学 Light heat energy conversion device having metal and non-metal multilayer film structure
CN101769648A (en) * 2008-12-30 2010-07-07 深圳市鹏桑普太阳能股份有限公司 Selective coating for absorbing solar light and heat
CN203163316U (en) * 2013-01-07 2013-08-28 湖南兴业太阳能科技有限公司 Solar spectrum selective absorbing film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109336413A (en) * 2018-12-18 2019-02-15 浙江旗滨节能玻璃有限公司 A kind of ocean blue colour thermal reflection coated glass and preparation method thereof

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Application publication date: 20130612