CN103148619A - Solar spectrum selective absorption film and production method thereof - Google Patents

Solar spectrum selective absorption film and production method thereof Download PDF

Info

Publication number
CN103148619A
CN103148619A CN2013100043163A CN201310004316A CN103148619A CN 103148619 A CN103148619 A CN 103148619A CN 2013100043163 A CN2013100043163 A CN 2013100043163A CN 201310004316 A CN201310004316 A CN 201310004316A CN 103148619 A CN103148619 A CN 103148619A
Authority
CN
China
Prior art keywords
layer
semi
dielectric layer
transparent metal
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013100043163A
Other languages
Chinese (zh)
Inventor
刘小军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd
Original Assignee
HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd filed Critical HUNAN SINGYES SOLAR TECHNOLOGY Co Ltd
Priority to CN2013100043163A priority Critical patent/CN103148619A/en
Publication of CN103148619A publication Critical patent/CN103148619A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/20—Solar thermal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers

Landscapes

  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The invention discloses a solar spectrum selective absorption film and a production method thereof. The solar spectrum selective absorption film comprises a filmed substrate, wherein the surface of the filmed substrate is sequentially coated with an infrared reflecting layer, a middle dielectric layer, a semitransparent metal layer and a surface dielectric layer from inside to outside, the filmed substrate is metal or alloy, the infrared reflecting layer is a coating containing Al or Cu, the middle dielectric layer and the surface dielectric layer are coatings containing silicon nitride or silicon oxynitride, and the semitransparent metal layer is a chromium-containing coating. The solar spectrum selective absorption film disclosed by the invention has the following technical effects that the solar spectrum selective absorption film has high solar absorptivity and low emissivity, the color of the film can be regulated according to needs, and a solar water heating system and a building are coordinated in color hues.

Description

A kind of solar spectrum selective absorbing film and production method thereof
Technical field
The invention belongs to thin film technique and thin-film material field, relate to the adjustable selective solar absorbing film of a kind of color.
Background technology
Solar selectively absorbing coating is the core component of solar energy heat collection equipment, play dual parts to absorb solar radiation energy and to the heat-transfer working medium transferring heat of heat collector, main solar selectively absorbing coating has black chromium, black nickel, anodized coating and blue titanium plated film etc. in the market, existing coating color is single, not attractive in appearance, lack ornamental solar water heating system and the building of can not making harmonious on tone.
Summary of the invention
The purpose of this invention is to provide a kind of solar spectrum selective absorbing film.
Technical scheme of the present invention is, a kind of solar spectrum selective absorbing film, comprise an overlay film matrix, cover successively from inside to outside infrared reflecting layer, middle dielectric layer, semi-transparent metal layer, surface media at the overlay film matrix surface, described overlay film matrix is metal or alloy, described infrared reflecting layer is the coating that comprises aluminium or copper, and described middle dielectric layer and surface media are the coating of silicon nitride comprising or silicon oxynitride, and described semi-transparent metal layer is the coating that contains chromium.
The infrared external reflection layer thickness is 20～150nm, and middle dielectric layer and surface dielectric layer thickness are 30～100nm, and the semi-transparent metals layer thickness is 1～50nm.
Increase one or two " semi-transparent metal layer/dielectric layer " alternating layer outside surface media.
The semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer is the coating that contains chromium, and dielectric layer is the coating of silicon nitride comprising or silicon oxynitride.
The thickness of the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer is 1～30nm, and thickness of dielectric layers is 30～100nm.
A kind of production method of solar spectrum selective absorbing film:
The present invention has following technique effect, and the solar spectrum selective absorbing film solar absorptance is high, and emissivity is low, and the film color can be regulated as required, can make solar water heating system and building harmonious on tone.
Description of drawings
Fig. 1 is the layer structure schematic diagram of the solar spectrum selective absorbing film of blueness.
Fig. 2 is the layer structure schematic diagram of the solar spectrum selective absorbing film of blueness.
Fig. 3 is the layer structure schematic diagram of the solar spectrum selective absorbing film of black.
Fig. 4 is the layer structure schematic diagram of the solar spectrum selective absorbing film of purple.
The specific embodiment
Embodiment 1
As shown in Figure 1, a kind of solar spectrum selective absorbing film of blueness, comprise a metal A l overlay film matrix 1, on Al overlay film matrix 1 surface from inside to outside successively cladding thickness be that 20nm fine aluminium infrared reflecting layer 2, thickness are the silicon nitride middle dielectric layer 3 of 60nm, the semi-transparent metals chromium layer 4 that thickness is 15nm, the silicon oxynitride surface media 5 that thickness is 68nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck infrared reflecting layer Al on matrix, vacuum is 0.5Pa, and the gas sputtering target material is twin cathode aluminium target, and its sputtering current is 10A, and sputtering voltage is 460V, sputter gas is Ar;
E. silicon nitride middle dielectric layer, vacuum is 0.5Pa, and the gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 45A, and sputtering voltage is 570V, and sputter gas is Ar, and reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
F. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 10A, and sputtering voltage is 510V, and sputter gas is Ar;
G. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 47A, and sputtering voltage is 600V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O 2Account for 7%.
The solar absorptance of the solar spectrum selective absorbing film that this is blue is: 94.5%, and emissivity is: 6%
Embodiment 2
as shown in Figure 2, a kind of solar spectrum selective absorbing film of blueness, comprise an aluminium overlay film matrix 1, on aluminium overlay film matrix 1 surface from inside to outside successively cladding thickness be 20nm fine aluminium infrared reflecting layer 2, thickness is the silicon nitride middle dielectric layer 3 of 60nm, thickness is the semi-transparent metals chromium layer 4 of 23nm, thickness is the silicon nitride surface dielectric layer 5 of 58nm, at " semi-transparent metal layer/dielectric layer " alternating layer 6 of the outer increase of surface media 5, the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer 6 is the coating that contains chromium, thickness is 10nm, dielectric layer is the coating of silicon nitride comprising, thickness is 59nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck infrared reflecting layer Al on matrix, vacuum is 0.5Pa, and the gas sputtering target material is twin cathode aluminium target, and its sputtering current is 10A, and sputtering voltage is 460V, sputter gas is Ar;
E. in vacuum chamber, then sputter one deck silicon nitride middle dielectric layer, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 45A, and sputtering voltage is 570V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
F. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.13Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 15A, and sputtering voltage is 800V, and sputter gas is Ar;
G. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 41A, and sputtering voltage is 525V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
H. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.13Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 7A, and sputtering voltage is 440V, and sputter gas is Ar;
I. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 41A, and sputtering voltage is 530V, and sputter gas is Ar, reacting gas is N 2, Ar accounts for 43% of all gas proportion, and N2 accounts for 57%.
Gas is Ar, and reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%.
The solar absorptance of the solar spectrum selective absorbing film that this is blue is: 96.5%, and emissivity is: 7%
Embodiment 3
As shown in Figure 3, a kind of solar spectrum selective absorbing film of black, comprise a metal A l overlay film matrix 1, on Al overlay film matrix 1 surface from inside to outside successively cladding thickness be that 20nm fine aluminium infrared reflecting layer 2, thickness are the silicon nitride middle dielectric layer 3 of 71nm, the semi-transparent metals chromium layer 4 that thickness is 19nm, the silicon oxynitride surface media 5 that thickness is 56nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor.
D. in vacuum chamber, first magnetron sputtering one deck infrared reflecting layer Al on matrix, vacuum is 0.5Pa, and the gas sputtering target material is twin cathode aluminium target, and its sputtering current is 10A, and sputtering voltage is 460V, sputter gas is Ar;
E. silicon nitride middle dielectric layer, vacuum is 0.5Pa, and the gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 49A, and sputtering voltage is 624V, and sputter gas is Ar, and reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
F. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 13A, and sputtering voltage is 710V, and sputter gas is Ar;
G. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 40A, and sputtering voltage is 520V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O 2Account for 7%;
The solar absorptance of the solar spectrum selective absorbing film of this black is: 93.5%, and emissivity is: 6%
Embodiment 4
As shown in Figure 4, the solar spectrum selective absorbing film of a kind of purple, comprise a metal A l overlay film matrix 1, on Al overlay film matrix 1 surface from inside to outside successively cladding thickness be that 20nm fine aluminium infrared reflecting layer 2, thickness are the silicon nitride middle dielectric layer 3 of 53nm, the semi-transparent metals chromium layer 4 that thickness is 10nm, the silicon oxynitride surface media 5 that thickness is 72nm.
Its production method is:
The preparation method of coating for selective absorption carries out successively according to the following steps:
A. the Al matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, first magnetron sputtering one deck infrared reflecting layer Al on matrix, vacuum is 0.5Pa, and the gas sputtering target material is twin cathode aluminium target, and its sputtering current is 10A, and sputtering voltage is 460V, sputter gas is Ar;
E. silicon nitride middle dielectric layer, vacuum is 0.5Pa, and the gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 37A, and sputtering voltage is 465V, and sputter gas is Ar, and reacting gas is N 2, Ar accounts for 43% of all gas proportion, N 2Account for 57%;
F. in vacuum chamber, then sputter one deck semi-transparent metals chromium layer, vacuum is that 0.5Pa gas sputtering target material is twin cathode chromium target, and its sputtering current is 7A, and sputtering voltage is 440V, and sputter gas is Ar;
G. in vacuum chamber, magnetron sputtering one deck silicon oxynitride surface media more at last, vacuum is that 0.5Pa gas sputtering target material is the twin cathode silicon target that intermediate frequency power supply is controlled, and its sputtering current is 40A, and sputtering voltage is 628V, and sputter gas is Ar, reacting gas is N 2Mix O 2, Ar accounts for 33% of all gas proportion, N 2Account for 60%, O 2Account for 7%.
The solar absorptance of the solar spectrum selective absorbing film of this purple is: 94.5%, and emissivity is: 6%.

Claims (9)

1. solar spectrum selective absorbing film, comprise an overlay film matrix (1), cover successively from inside to outside infrared reflecting layer (2), middle dielectric layer (3), semi-transparent metal layer (4), surface media (5) on overlay film matrix (1) surface, it is characterized in that: described overlay film matrix (1) is metal or alloy, described infrared reflecting layer (2) is the coating that comprises aluminium or copper, described middle dielectric layer (3) and surface media (5) are the coating of silicon nitride comprising or silicon oxynitride, and described semi-transparent metal layer (4) is for containing the coating of chromium.
2. a kind of solar spectrum selective absorbing film according to claim 1, it is characterized in that: infrared reflecting layer (2) thickness is 10 ~ 150nm, middle dielectric layer (3) and surface media (5) thickness are 30 ~ 100nm, and semi-transparent metal layer (4) thickness is 1 ~ 50nm.
3. a kind of solar spectrum selective absorbing film according to claim 1, is characterized in that: increase one or two " semi-transparent metal layer/dielectric layer " alternating layer (6) outside surface media (5).
4. a kind of solar spectrum selective absorbing film according to claim 3, it is characterized in that: the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer (6) is the coating that contains chromium, dielectric layer is the coating of silicon nitride comprising or silicon oxynitride.
5. a kind of solar spectrum selective absorbing film according to claim 3, it is characterized in that: the thickness of the semi-transparent metal layer of " semi-transparent metal layer/dielectric layer " alternating layer (6) is 1 ~ 30nm, thickness of dielectric layers is 30 ~ 100nm.
6. the preparation method of coating for selective absorption according to claim 1, is characterized in that, carries out according to the following steps successively:
A. the overlay film matrix is carried out surface treatment, remove surface and oil contaminant and oxide skin;
B. the matrix oven dry that surface treatment is good;
C. the matrix of drying is placed in vacuum coating indoor;
D. in vacuum chamber, according to the structure of plate core of solar heat-collecting, prepare successively infrared reflecting layer, dielectric layer, semi-transparent metal layer, dielectric layer on matrix, perhaps increase again one or two " semi-transparent metal layer, dielectric layer " alternating layer (5).
7. the preparation of infrared reflecting layer according to claim 6 is characterized in that: vacuum is 0.05 ~ 2Pa, and sputter gas is Ar, and sputtering target material is twin cathode Al or Cu target, and sputtering current is 2 ~ 30A, and cathode voltage is 200 ~ 800V.
8. the preparation of dielectric layer according to claim 6 is characterized in that: vacuum is 0.05 ~ 2Pa, and sputter gas is Ar, and reacting gas is N 2Or N 2Mix O 2, Ar accounts for 30 ~ 50% of all gas proportion, N 2Account for 40 ~ 60%, O 2Account for 1 ~ 15%, the gas sputtering target material is the twin cathode Si target that intermediate frequency power supply is controlled, and sputtering current is 30 ~ 75A, and sputtering voltage is 450 ~ 1000V.
9. the preparation of semi-transparent metal layer according to claim 6 is characterized in that vacuum is 0.05 ~ 2Pa, and sputter gas is Ar, and sputtering target material is twin cathode Cr target, and sputtering current is 2 ~ 30A, and cathode voltage is 300 ~ 1000V.
CN2013100043163A 2013-01-07 2013-01-07 Solar spectrum selective absorption film and production method thereof Pending CN103148619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013100043163A CN103148619A (en) 2013-01-07 2013-01-07 Solar spectrum selective absorption film and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013100043163A CN103148619A (en) 2013-01-07 2013-01-07 Solar spectrum selective absorption film and production method thereof

Publications (1)

Publication Number Publication Date
CN103148619A true CN103148619A (en) 2013-06-12

Family

ID=48546838

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013100043163A Pending CN103148619A (en) 2013-01-07 2013-01-07 Solar spectrum selective absorption film and production method thereof

Country Status (1)

Country Link
CN (1) CN103148619A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103383155A (en) * 2013-06-21 2013-11-06 中国科学院上海技术物理研究所 Ti-alloy nitride selective-absorption film system and preparation method thereof
CN103727693A (en) * 2014-01-11 2014-04-16 福建师范大学 Metal-medium multilayered structure color-adjustable sun photo-thermal absorbing coating
CN105177497A (en) * 2014-06-12 2015-12-23 佛山圣哥拉太阳能科技有限公司 Interference solar selective heat absorption coating layer
CN110093583A (en) * 2018-01-29 2019-08-06 蓝思科技（长沙）有限公司 A kind of photochromic decorating film and preparation method thereof
CN110484879A (en) * 2018-05-15 2019-11-22 蓝思科技（长沙）有限公司 Metal composite coating Logo and preparation method thereof with include its ceramic cover plate and electronic equipment
CN112882138B (en) * 2021-01-11 2021-12-21 中南大学 Metal and dielectric composite high-temperature-resistant solar spectrum selective absorption structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1208274C (en) * 2001-01-09 2005-06-29 上海耀华皮尔金顿玻璃股份有限公司 Absorption-type low-radiation film coated glass
CN100439092C (en) * 2006-06-08 2008-12-03 复旦大学 Light heat energy conversion device having metal and non-metal multilayer film structure
CN101769648A (en) * 2008-12-30 2010-07-07 深圳市鹏桑普太阳能股份有限公司 Selective coating for absorbing solar light and heat
CN203163317U (en) * 2013-01-07 2013-08-28 湖南兴业太阳能科技有限公司 Solar spectrum selective absorbing film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1208274C (en) * 2001-01-09 2005-06-29 上海耀华皮尔金顿玻璃股份有限公司 Absorption-type low-radiation film coated glass
CN100439092C (en) * 2006-06-08 2008-12-03 复旦大学 Light heat energy conversion device having metal and non-metal multilayer film structure
CN101769648A (en) * 2008-12-30 2010-07-07 深圳市鹏桑普太阳能股份有限公司 Selective coating for absorbing solar light and heat
CN203163317U (en) * 2013-01-07 2013-08-28 湖南兴业太阳能科技有限公司 Solar spectrum selective absorbing film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103383155A (en) * 2013-06-21 2013-11-06 中国科学院上海技术物理研究所 Ti-alloy nitride selective-absorption film system and preparation method thereof
CN103727693A (en) * 2014-01-11 2014-04-16 福建师范大学 Metal-medium multilayered structure color-adjustable sun photo-thermal absorbing coating
CN105177497A (en) * 2014-06-12 2015-12-23 佛山圣哥拉太阳能科技有限公司 Interference solar selective heat absorption coating layer
CN110093583A (en) * 2018-01-29 2019-08-06 蓝思科技（长沙）有限公司 A kind of photochromic decorating film and preparation method thereof
CN110093583B (en) * 2018-01-29 2024-01-30 蓝思科技（长沙）有限公司 Photochromic decorative film and manufacturing method thereof
CN110484879A (en) * 2018-05-15 2019-11-22 蓝思科技（长沙）有限公司 Metal composite coating Logo and preparation method thereof with include its ceramic cover plate and electronic equipment
CN110484879B (en) * 2018-05-15 2021-09-21 蓝思科技（长沙）有限公司 Metal composite coating Logo, preparation method thereof, ceramic cover plate comprising metal composite coating Logo and electronic equipment comprising metal composite coating Logo
CN112882138B (en) * 2021-01-11 2021-12-21 中南大学 Metal and dielectric composite high-temperature-resistant solar spectrum selective absorption structure

Similar Documents

Publication Publication Date Title
CN103148619A (en) Solar spectrum selective absorption film and production method thereof
CN101666557B (en) Non-vacuum solar spectrum selective absorption film and preparation method thereof
CN110028251B (en) Copper-containing double-silver low-emissivity coated glass capable of being subsequently processed and preparation method thereof
Farooq et al. High performance sputtered Ni: SiO2 composite solar absorber surfaces
CN102501459B (en) Preparation method of medium-and-high-temperature solar selective absorption coating
CN102812385B (en) For front surface mirror reflecting sunlight and its preparation method and application
Hao et al. Thermal stability of nitride solar selective absorbing coatings used in high temperature parabolic trough current
CN106884145A (en) A kind of coating for selective absorption of sunlight spectrum and preparation method thereof
CN105084781B (en) A kind of golden low radiation film coating glass and preparation method thereof
CN104532188A (en) Composite film material of selective solar heat absorbing coating and preparation method of composite film material
CN203163317U (en) Solar spectrum selective absorbing film
CN203163316U (en) Solar spectrum selective absorbing film
CN104152854B (en) High temperature resistant, antioxidative low infrared emissivity composite coating and preparation method thereof
CN104034071A (en) Dark green solar spectral selection absorbing coating and preparation method and application thereof
CN109341116A (en) A kind of Cr-Si-N-O solar selectively absorbing coating and preparation method thereof
CN101871103A (en) Solar spectrum high-temperature selective absorbing film and manufacturing method thereof
CN109457219B (en) Medium-low temperature solar spectrum selective absorption coating and preparation method thereof
CN103148620A (en) Solar spectrum selective absorption film and production method thereof
CN106403329A (en) High-temperature solar selective absorbing coating and preparation method thereof
CN103727693A (en) Metal-medium multilayered structure color-adjustable sun photo-thermal absorbing coating
CN105444443B (en) Solar selectively absorbing coating and preparation method thereof
CN104149410B (en) Inorganic high-temperature resistant low infrared emissivity composite coating and preparation method thereof
CN103234292B (en) A kind of preparation method of film structure of solar energy optical-thermal switching film
CN203284327U (en) Low-reflectivity gold remote toughened off-line LOW-E coated glass
CN210030460U (en) Copper-containing double-silver low-emissivity coated glass capable of being subsequently processed

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130612