CN103137660A - 超级结功率器件终端结构 - Google Patents
超级结功率器件终端结构 Download PDFInfo
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CN103137660A true CN103137660A (zh) | 2013-06-05 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
US7800175B2 (en) * | 2007-10-01 | 2010-09-21 | Kabushiki Kaisha Toshiba | Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions |
CN102208414A (zh) * | 2010-03-31 | 2011-10-05 | 力士科技股份有限公司 | 一种超结沟槽金属氧化物半导体场效应管及其制造方法 |
CN102214581A (zh) * | 2011-05-26 | 2011-10-12 | 上海先进半导体制造股份有限公司 | 用于深槽超结mos器件的终端结构的制作方法 |
CN102231390A (zh) * | 2011-06-17 | 2011-11-02 | 浙江大学 | 一种超结结构的纵向双扩散金属氧化物半导体功率器件 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
US7800175B2 (en) * | 2007-10-01 | 2010-09-21 | Kabushiki Kaisha Toshiba | Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions |
CN102208414A (zh) * | 2010-03-31 | 2011-10-05 | 力士科技股份有限公司 | 一种超结沟槽金属氧化物半导体场效应管及其制造方法 |
CN102214581A (zh) * | 2011-05-26 | 2011-10-12 | 上海先进半导体制造股份有限公司 | 用于深槽超结mos器件的终端结构的制作方法 |
CN102231390A (zh) * | 2011-06-17 | 2011-11-02 | 浙江大学 | 一种超结结构的纵向双扩散金属氧化物半导体功率器件 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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