CN103119487B - 配置成从中间波导抽头光信号的部分的光监视器 - Google Patents
配置成从中间波导抽头光信号的部分的光监视器 Download PDFInfo
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- CN103119487B CN103119487B CN201180046825.1A CN201180046825A CN103119487B CN 103119487 B CN103119487 B CN 103119487B CN 201180046825 A CN201180046825 A CN 201180046825A CN 103119487 B CN103119487 B CN 103119487B
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- Prior art keywords
- waveguide
- light
- absorbing medium
- light absorbing
- described light
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- 230000003287 optical effect Effects 0.000 title claims description 72
- 230000005540 biological transmission Effects 0.000 claims abstract description 94
- 230000031700 light absorption Effects 0.000 claims abstract description 62
- 238000010521 absorption reaction Methods 0.000 claims abstract description 17
- 230000005684 electric field Effects 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000002243 precursor Substances 0.000 description 52
- 239000004020 conductor Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000012212 insulator Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000007704 transition Effects 0.000 description 11
- 230000001939 inductive effect Effects 0.000 description 10
- 238000004891 communication Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- 229910004541 SiN Inorganic materials 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12126—Light absorber
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/804,769 US8411260B1 (en) | 2010-07-28 | 2010-07-28 | Light monitor configured to tap portion of light signal from mid-waveguide |
US12/804769 | 2010-07-28 | ||
PCT/US2011/001010 WO2012015463A1 (en) | 2010-07-28 | 2011-06-03 | Light monitor configured to tap portion of light signal from mid-waveguide |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103119487A CN103119487A (zh) | 2013-05-22 |
CN103119487B true CN103119487B (zh) | 2016-04-27 |
Family
ID=45530414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180046825.1A Active CN103119487B (zh) | 2010-07-28 | 2011-06-03 | 配置成从中间波导抽头光信号的部分的光监视器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8411260B1 (zh) |
EP (1) | EP2598925A1 (zh) |
CN (1) | CN103119487B (zh) |
CA (1) | CA2805854C (zh) |
WO (1) | WO2012015463A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8989522B2 (en) * | 2012-05-09 | 2015-03-24 | Kotura, Inc. | Isolation of components on optical device |
TWI633348B (zh) * | 2016-09-21 | 2018-08-21 | 中華學校財團法人中華科技大學 | Polymer optical wavelength filter element with surface relief Bragg grating structure and manufacturing method thereof |
US11105975B2 (en) * | 2016-12-02 | 2021-08-31 | Rockley Photonics Limited | Waveguide optoelectronic device |
US11036006B2 (en) * | 2016-12-02 | 2021-06-15 | Rockley Photonics Limited | Waveguide device and method of doping a waveguide device |
US11022825B2 (en) * | 2018-09-03 | 2021-06-01 | Ciena Corporation | Silicon photonics modulator using TM mode and with a modified rib geometry |
US11500154B1 (en) * | 2019-10-18 | 2022-11-15 | Apple Inc. | Asymmetric optical power splitting system and method |
US11886055B2 (en) | 2019-12-22 | 2024-01-30 | Mellanox Technologies, Ltd. | Low voltage modulator |
US11906778B2 (en) | 2020-09-25 | 2024-02-20 | Apple Inc. | Achromatic light splitting device with a high V number and a low V number waveguide |
US11971574B2 (en) | 2021-09-24 | 2024-04-30 | Apple Inc. | Multi-mode devices for multiplexing and de-multiplexing |
US11855700B2 (en) | 2021-12-16 | 2023-12-26 | Mellanox Technologies, Ltd. | High bandwidth optical modulator |
US11906873B2 (en) | 2022-01-05 | 2024-02-20 | Mellanox Technologies, Ltd. | Serial data conversion redundancy using optical modulators |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1982930A (zh) * | 2005-12-16 | 2007-06-20 | 欧姆龙株式会社 | 光波导及光缆模块 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0993053A1 (en) | 1998-10-09 | 2000-04-12 | STMicroelectronics S.r.l. | Infrared detector integrated with a waveguide and method of manufacturing |
AU2002356330A1 (en) | 2001-12-27 | 2003-07-30 | Bookham Technology Plc | An in-line waveguide photo detector |
US6885795B1 (en) * | 2002-05-31 | 2005-04-26 | Kotusa, Inc. | Waveguide tap monitor |
US7120350B2 (en) | 2003-03-14 | 2006-10-10 | Intel Corporation | Integrated waveguide photodetector |
US7085443B1 (en) | 2003-08-15 | 2006-08-01 | Luxtera, Inc. | Doping profiles in PN diode optical modulators |
US7205624B2 (en) | 2003-10-07 | 2007-04-17 | Applied Materials, Inc. | Self-aligned implanted waveguide detector |
WO2007027615A1 (en) | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
US7875522B2 (en) | 2007-03-30 | 2011-01-25 | The Board Of Trustees Of The Leland Stanford Junior University | Silicon compatible integrated light communicator |
US8093080B2 (en) * | 2009-02-19 | 2012-01-10 | Kotusa, Inc. | Optical device having light sensor employing horizontal electrical field |
-
2010
- 2010-07-28 US US12/804,769 patent/US8411260B1/en active Active
-
2011
- 2011-06-03 EP EP11812860.2A patent/EP2598925A1/en not_active Withdrawn
- 2011-06-03 CN CN201180046825.1A patent/CN103119487B/zh active Active
- 2011-06-03 CA CA2805854A patent/CA2805854C/en active Active
- 2011-06-03 WO PCT/US2011/001010 patent/WO2012015463A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1982930A (zh) * | 2005-12-16 | 2007-06-20 | 欧姆龙株式会社 | 光波导及光缆模块 |
Also Published As
Publication number | Publication date |
---|---|
EP2598925A1 (en) | 2013-06-05 |
CN103119487A (zh) | 2013-05-22 |
CA2805854A1 (en) | 2012-02-02 |
WO2012015463A1 (en) | 2012-02-02 |
US8411260B1 (en) | 2013-04-02 |
CA2805854C (en) | 2017-11-07 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Feng Dazeng Inventor after: M. Ashari Inventor after: B.J. Ralph Inventor after: Sophie R. Kazakhstan Inventor before: Feng Dazeng Inventor before: M. Ashari Inventor before: B.J. Ralph Inventor before: R. Shafira |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: FENG DAZENG M. ASGHARI B. J. LUFF R. SHA FEILA TO: FENG DAZENG M. ASGHARI B. J. LUFF R. SHAFIHA |
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CB02 | Change of applicant information |
Address after: California, USA Applicant after: KOTURA, Inc. Address before: California, USA Applicant before: Kotuja Optoelectronics |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Effective date of registration: 20230921 Address after: California, USA Patentee after: Mellanox Technologies, Ltd. Address before: California, USA Patentee before: KOTURA, Inc. |