CN103116072A - Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system - Google Patents

Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system Download PDF

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CN103116072A
CN103116072A CN2013100277522A CN201310027752A CN103116072A CN 103116072 A CN103116072 A CN 103116072A CN 2013100277522 A CN2013100277522 A CN 2013100277522A CN 201310027752 A CN201310027752 A CN 201310027752A CN 103116072 A CN103116072 A CN 103116072A
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mems
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CN103116072B (en
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廖小平
易真翔
吴昊
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Southeast University
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Abstract

The invention discloses a microwave detecting system based on clamped beams and indirect power sensors and a detecting method of the microwave detecting system. The detecting system comprises an MEMS (micro-electro-mechanical-system) reconfigurable antenna, an MEMS adjustable filter, a control circuit and a microwave detector. The microwave detector is mounted on a GaAs substrate and comprises CPW (coplanar waveguide) transmission lines, two identical MEMS clamped beam structures, a power combiner, and four MEMS indirect waveform power sensors totally identical in structure. The microwave detecting system based on clamped beams and indirect power sensors is novel in structure and small in size, realizes integration of microwave signal frequency and power detection, and is compatible with a GaAs single-chip microwave integrated circuit.

Description

Microwave detection system and detection method thereof based on clamped beam and indirect type power sensor
Technical field
The invention belongs to microelectromechanical systems MEMS technical field, be a kind of online microwave frequency detector and detection method thereof based on clamped beam and indirect type power sensor.
Background technology
In research of microwave technology, microwave power and frequency are two important parameters that characterize the microwave signal feature.The detection of these two parameters has been become the important component part of electromagnetic measurement.The detecting device of microwave signal frequency and power has very widely at aspects such as military affairs, personal communication and scientific researches to be used.Existing microwave frequency detection technique is mainly based on process of heterodyning, counting method, resonance method and phase comparing method, and the microwave power detection technology is mainly based on the method for diode, thermopair and thermistor.Although these detection techniques form, its shortcoming is can't system integration frequency detecting and power detection.Along with the development of science and technology, modern PCS Personal Communications System and radar system require more and more higher: microminiaturization simplifies the structure and online microwave frequency detector has become a kind of trend.In recent years, along with the fast-developing of MEMS technology and to the deepening continuously of MEMS fixed beam structure and the research of MEMS indirect-type microwave power sensor, making based on the microwave frequency of clamped beam and indirect type power sensor and the system integration of power detection becomes possibility.
Summary of the invention
The problem to be solved in the present invention is: existing microwave signal detects can't system integration frequency detecting and power detection, and the user needs simple structure, less volume and the microwave frequency that can detect online, power detector.
Technical scheme of the present invention is: based on the microwave detection system of clamped beam and indirect type power sensor, described microwave detection system comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, the MEMS reconfigurable antenna receives microwave signal, after the MEMS adjustable filter, obtain microwave signal input microwave detector to be measured, control circuit connects respectively MEMS reconfigurable antenna and MEMS adjustable filter.
described microwave detector is provided with the measured signal transmission line on the GaAs substrate, two identical MEMS fixed beam structures of structure, a merit is closed device and four identical MEMS indirect-type microwave power sensors of structure, the measured signal transmission line is the CPW transmission line, described CPW transmission line is made of signal wire and ground wire, microwave signal to be measured is by MEMS indirect-type microwave power sensor of measured signal transmission line input, two MEMS fixed beam structures are suspended from the signal wire top of measured signal transmission line, clamped beam one end of two MEMS fixed beam structures connects respectively a MEMS indirect-type microwave power sensor, the other end is connected to respectively merit and closes device, the output terminal that merit is closed device connects a MEMS indirect-type microwave power sensor.
As preferably, centered by the distance L between two MEMS fixed beam structures of microwave detector 1/4 of Frequency point institute corresponding wavelength, described center frequency points refers to the center frequency points of the frequency detecting scope of described microwave detector.
MEMS fixed beam structure and the merit of microwave detector closed between device and MEMS indirect-type microwave power sensor and is connected by the CPW transmission line, and merit is closed between device and MEMS indirect-type microwave power sensor and is connected by the CPW transmission line; Fixed beam structure comprises clamped beam and anchor district, is provided with insulating medium layer between the signal wire of the measured signal transmission line of clamped beam and below.
The merit of microwave detector is closed device and is comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, and merit is closed and is asymmetric coplanar stripline ACPS signal wire between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
A kind of detection method of above-mentioned microwave detection system based on clamped beam and indirect type power sensor receives microwave signal by the MEMS reconfigurable antenna, through obtaining microwave signal to be measured after the MEMS adjustable filter, in the input microwave detector; In microwave detector, microwave signal to be measured is transferred to through the measured signal transmission line MEMS indirect-type microwave power sensor that is positioned at the measured signal line end, detects the power P of microwave signal to be measured; Microwave signal to be measured from the measured signal transmission line through out-of-date, two MEMS fixed beam structures are coupled out the microwave signal that a pair of amplitude equates, exists certain phase differential online, each microwave signal is divided into two-way, one tunnel input work is closed device, and to carry out vector synthetic, another road input MEMS indirect-type microwave power sensor is measured the microwave signal power P that is coupled out separately by two MEMS fixed beam structures 1, P 2When two MEMS fixed beam structure distance L were determined, there was a phase differential that is directly proportional to microwave signal frequency to be measured in two microwave signals that are coupled out
Figure BDA00002772761500021
Merit is closed the power P of the composite signal of device 3With this phase differential
Figure BDA00002772761500022
There is the relation of a cosine function:
Four MEMS indirect-type microwave power sensors detect the power P of microwave signal to be measured, the power P of microwave signal that the MEMS clamped beam is coupled out based on the Seebeck principle 1, P 2And merit is closed the power P of device composite signal 3Size, and with DC voltage form V, V 1, V 2And V 3The output measurement result, based on formula (1), the frequency of microwave signal to be measured is:
f = c 2 πL ϵ er arccos V 3 - 1 2 V 1 - 1 2 V 2 V 1 V 2 - - - ( 2 )
Wherein, c is the light velocity, ε erEffective dielectric constant for the CPW transmission line.
Further, change the voltage on drive electrode in MEMS reconfigurable antenna and MEMS adjustable filter by control circuit, thereby adjust the centre frequency of MEMS reconfigurable antenna and MEMS adjustable filter, to realize microwave signal frequency in a certain characteristic frequency situation and the detection of power.
The invention provides a kind of microwave frequency and power detecting system based on clamped beam and indirect type power sensor, microwave signal by the reception of MEMS reconfigurable antenna, after the MEMS adjustable filter, again through one section CPW transmission line, be transferred to the MEMS indirect-type microwave power sensor that is positioned at the CPW line end, can detect the power of microwave signal.CPW transmission line top and the identical MEMS clamped beam of two structures in a distance a pair of amplitude that is coupled out online that is positioned at equates, exists the microwave signal of a phase differential, and a supported signal of getting microwave signal closes device through merit, and to carry out vector synthetic.Detected the watt level of synthetic rear microwave signal and two microwave signals itself by the MEMS indirect-type microwave power sensor.According to the size of the DC voltage of exporting, infer the frequency of measured signal.Can change voltage on drive electrode by control circuit, thereby adjust the centre frequency of MEMS reconfigurable antenna and MEMS adjustable filter, to realize microwave signal frequency in a certain characteristic frequency situation and the detection of power.
Microwave frequency and power detecting system based on clamped beam and indirect type power sensor of the present invention not only has novel structure, the advantage that is easy to measure, and can realize integrated to microwave signal frequency and power detection, and compatible with the GaAs monolithic integrated microwave circuit.
Description of drawings
Fig. 1 the present invention is based on the microwave frequency of clamped beam and indirect type power sensor and the structural representation of power detecting system.
Fig. 2 is the A-A' sectional view in Fig. 1.
Fig. 3 is the B-B' sectional view in Fig. 1.
Embodiment
As Fig. 1, the present invention includes MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, the MEMS reconfigurable antenna receives microwave signal, after the MEMS adjustable filter, obtain microwave signal input microwave detector to be measured, control circuit connects respectively MEMS reconfigurable antenna and MEMS adjustable filter.The present invention is produced on GaAs substrate 1, and microwave detector comprises that co-planar waveguide CPW transmission line, two the identical MEMS fixed beam structures of structure, merits close device and four identical MEMS indirect-type microwave power sensors of structure.The CPW transmission line is as the signal transmssion line of frequency detector of the present invention, be used for the transmission of microwave signal to be measured, and the transmission of closing signal between device and MEMS indirect-type microwave power sensor of MEMS fixed beam structure, merit, the CPW transmission line is made of signal wire and ground wire.
Two identical MEMS clamped beams of structure are positioned at the top of the insulating medium layer 6 on the signal wire 2 of measured signal transmission line.When microwave signal process measured signal transmission line to be measured, it is identical but have the microwave signal of certain phase differential that two clamped beams separated by a distance are coupled out a pair of amplitude, there is a phase differential that is directly proportional to microwave signal frequency to be measured in this a pair of microwave signal, this is sent into merit to microwave signal, and to close the device vector synthetic, and there are the cosine function relation in the power and the described phase differential that close the composite signal of device output through merit.In order to measure the size of the microwave signal power that is coupled out by clamped beam, one end of two fixed beam structures is connected to respectively the MEMS indirect-type microwave power sensor, the recycling indirect-type microwave power sensor detects the size that merit is closed the synthetic power of device output, finally realizes the detection of microwave signal frequency to be measured.
The specific embodiments of detection system of the present invention is as follows:
As Fig. 1, the present invention is arranged on GaAs substrate 1, comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, microwave detector comprises CPW signal wire 2, ground wire 3, MEMS clamped beam 4, anchor district 5, insulating medium layer 6, power splitter isolation resistance 7, ACPS signal wire 8, terminal resistance 9, metal thermocouple arm 10, semiconductor thermocouple arm 11, metal connecting line 12 and direct current IOB 13.Be provided with MEMS reconfigurable antenna, MEMS adjustable filter, control circuit, co-planar waveguide CPW transmission line, two identical MEMS clamped beams, merits and close device and four MEMS indirect-type microwave power sensors on gallium arsenide substrate 1.
MEMS reconfigurable antenna and MEMS adjustable filter are prior art, no longer describe in detail.
In microwave detector, the CPW transmission line comprises signal wire 2 and ground wire 3.The measured signal transmission line adopts the CPW transmission line, after microwave signal process MEMS adjustable filter to be measured by the reception of MEMS reconfigurable antenna, enter the CPW transmission line from the input end of measured signal transmission line, export a MEMS indirect-type microwave power sensor to by output terminal again, detect the power that obtains microwave signal to be measured.
The MEMS fixed beam structure comprises clamped beam 4 and anchor district 5.Two in a distance the clamped beam 4 of L be suspended from the top of insulating medium layer 6 on the signal wire 2 of measured signal transmission line, as preferably, centered by distance L 1/4 of Frequency point institute corresponding wavelength, described center frequency points refers to the center frequency points of the frequency detecting scope of described microwave frequency detector.When measured signal from the signal wire of measured signal transmission line through out-of-date, two identical MEMS clamped beams 4 of structure are coupled out the microwave signal that a pair of amplitude equates, exists certain phase differential online, and getting a merit by the back in each microwave signal, to close the device vector synthetic.In order to measure the microwave signal power that is coupled out by clamped beam 4, another in the every pair of microwave signal is connected to respectively the MEMS indirect-type microwave power sensor.
Merit is closed device and is comprised asymmetric coplanar stripline ACPS signal wire 8, ground wire 3 and isolation resistance 7.The effect that merit is closed device is that two microwave signal vectors that the MEMS fixed beam structure is coupled out are synthesized.When microwave signal to be measured is passed through the signal wire of measured signal transmission line, because two clamped beams on signal wire have certain distance L, there is a phase differential that is directly proportional to microwave signal frequency to be measured in two microwave signals that are coupled out, described phase differential be that L is corresponding, L fixedly the time phase differential be a definite value, merit is closed the power P of the composite signal of device output 3Relation with a cosine function of this phase differential existence:
Figure BDA00002772761500051
Wherein, P 1, P 2Be respectively the power of the microwave signal that the MEMS clamped beam other end on signal wire is coupled out.So the power that the MEMS indirect-type microwave power sensor obtains is corresponding with microwave signal to be measured.
The MEMS indirect-type microwave power sensor comprises terminal resistance 9, metal thermocouple arm 10, semiconductor thermocouple arm 11, metal connecting line 12 and direct current IOB 13.Four MEMS indirect-type microwave power sensors detect the power P of microwave signal to be measured, the power P of microwave signal that the MEMS clamped beam is coupled out based on the Seebeck principle 1, P 2And merit is closed the power P of device composite signal 3Size, and with DC voltage form V, V 1, V 2And V 3The output measurement result, based on formula (1), the frequency of microwave signal to be measured is:
f = c 2 πL ϵ er arccos V 3 - 1 2 V 1 - 1 2 V 2 V 1 V 2 - - - ( 2 )
Wherein, c is the light velocity, ε erEffective dielectric constant for the CPW transmission line.
Further, change the voltage on drive electrode in MEMS reconfigurable antenna and MEMS adjustable filter by control circuit, thereby adjust the centre frequency of MEMS reconfigurable antenna and MEMS adjustable filter, to realize microwave signal frequency in a certain characteristic frequency situation and the detection of power.
The preparation method who the present invention is based on the online microwave frequency detector of clamped beam and indirect type power sensor is:
1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N +The doping content of gallium arsenide is 10 18cm -3, its square resistance is 100～130 Ω/;
2) photoetching and isolate the N of extension +Gallium arsenide, figure and the ohmic contact regions of the semiconductor thermocouple arm of formation thermoelectric pile;
3) anti-carve N +Gallium arsenide, forming its doping content is 10 17cm -3The semiconductor thermocouple arm of thermoelectric pile;
4) photoetching: removal will keep the local photoresist of gold germanium nickel/gold;
5) sputter gold germanium nickel/gold, its thickness is altogether
Figure BDA00002772761500053
6) peel off, form the metal thermocouple arm of thermoelectric pile;
7) photoetching: removal will keep the photoresist in tantalum nitride place;
8) sputter tantalum nitride, its thickness are 1 μ m;
9) peel off;
10) photoetching: removal will keep the photoresist in the place of ground floor gold;
11) evaporation ground floor gold, its thickness is 0.3 μ m;
12) peel off, form CPW signal wire and ground wire, the anchor district of MEMS clamped beam;
13) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
14) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Figure BDA00002772761500061
Thick silicon nitride medium layer;
15) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW signal wire of MEMS clamped beam below;
16) deposit and photoetching polyimide sacrificial layer: apply the 1.6 thick polyimide sacrificial layer of μ m on gallium arsenide substrate, pit is filled up in requirement, and the thickness of polyimide sacrificial layer has determined that MEMS clamped beam and its below are in the distance between the silicon nitride medium layer on main line CPW; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
17) evaporation titanium/gold/titanium, its thickness is
Figure BDA00002772761500062
Evaporation is used for the down payment of plating;
18) photoetching: removal will be electroplated local photoresist;
19) electrogilding, its thickness are 2 μ m;
20) remove photoresist: removing does not need to electroplate local photoresist;
21) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW signal wire, ground wire, MEMS clamped beam, direct current IOB and metal connecting line;
22) with this gallium arsenide substrate thinning back side to 100 μ m;
23) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under normal temperature, dries.
Above-mentioned steps adopts the processes well known in the MEMS technology, no longer describes in detail.
Distinguish that to be whether the standard of structure of the present invention as follows:
The online microwave frequency detector detection system of microelectron-mechanical of the present invention comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, and microwave detector comprises two identical MEMS fixed beam structures and four identical MEMS indirect-type microwave power sensors.When microwave signal process measured signal transmission line to be measured, it is identical but have the microwave signal of certain phase differential that two identical clamped beams separated by a distance and that be suspended from signal wire top are coupled out a pair of amplitude, it is synthetic that microwave signal is closed the device vector through merit, and there is the cosine function relation in the phase differential between the power of composite signal and two microwave signals.In order to measure the size of the microwave signal power that is coupled out by clamped beam, each microwave signal is inputted respectively the MEMS indirect-type microwave power sensor separately.Utilize indirect-type microwave power sensor to detect the size of coupled signal, composite signal and the power of microwave signal to be measured own, finally realize the detection of microwave signal frequency to be measured and power.
The structure that satisfies above condition namely is considered as online microwave frequency detector and the detection method based on clamped beam and indirect type power sensor of the present invention.

Claims (7)

1. based on the microwave detection system of clamped beam and indirect type power sensor, it is characterized in that described microwave detection system comprises MEMS reconfigurable antenna, MEMS adjustable filter, control circuit and microwave detector, the MEMS reconfigurable antenna receives microwave signal, after the MEMS adjustable filter, obtain microwave signal input microwave detector to be measured, control circuit connects respectively MEMS reconfigurable antenna and MEMS adjustable filter
described microwave detector is provided with the measured signal transmission line on the GaAs substrate, two identical MEMS fixed beam structures of structure, a merit is closed device and four identical MEMS indirect-type microwave power sensors of structure, the measured signal transmission line is the CPW transmission line, described CPW transmission line is made of signal wire and ground wire, microwave signal to be measured is by MEMS indirect-type microwave power sensor of measured signal transmission line input, two MEMS fixed beam structures are suspended from the signal wire top of measured signal transmission line, clamped beam one end of two MEMS fixed beam structures connects respectively a MEMS indirect-type microwave power sensor, the other end is connected to respectively merit and closes device, the output terminal that merit is closed device connects a MEMS indirect-type microwave power sensor.
2. the microwave detection system based on clamped beam and indirect type power sensor according to claim 1, it is characterized in that 1/4 of Frequency point centered by the distance L between two MEMS fixed beam structures of microwave detector institute corresponding wavelength, described center frequency points refers to the center frequency points of the frequency detecting scope of described microwave detector.
3. the microwave detection system based on clamped beam and indirect type power sensor according to claim 1 and 2, the MEMS fixed beam structure that it is characterized in that microwave detector closes between device and MEMS indirect-type microwave power sensor with merit and is connected by the CPW transmission line, and merit is closed between device and MEMS indirect-type microwave power sensor and is connected by the CPW transmission line; Fixed beam structure comprises clamped beam and anchor district, is provided with insulating medium layer between the signal wire of the measured signal transmission line of clamped beam and below.
4. the microwave detection system based on clamped beam and indirect type power sensor according to claim 1 and 2, the merit that it is characterized in that microwave detector is closed device and is comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, merit is closed and is asymmetric coplanar stripline ACPS signal wire between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
5. the microwave detection system based on clamped beam and indirect type power sensor according to claim 3, the merit that it is characterized in that microwave detector is closed device and is comprised asymmetric coplanar stripline ACPS signal wire, ground wire and isolation resistance, merit is closed and is asymmetric coplanar stripline ACPS signal wire between the input end of device and output terminal, and isolation resistance is arranged between two input ends.
6. the detection method of the described microwave detection system based on clamped beam and indirect type power sensor of a claim 1-5 any one, it is characterized in that receiving microwave signal by the MEMS reconfigurable antenna, through obtaining microwave signal to be measured after the MEMS adjustable filter, input in microwave detector; In microwave detector, microwave signal to be measured is transferred to through the measured signal transmission line MEMS indirect-type microwave power sensor that is positioned at the measured signal line end, detects the power P of microwave signal to be measured; Microwave signal to be measured from the measured signal transmission line through out-of-date, two MEMS fixed beam structures are coupled out the microwave signal that a pair of amplitude equates, exists certain phase differential online, each microwave signal is divided into two-way, one tunnel input work is closed device, and to carry out vector synthetic, another road input MEMS indirect-type microwave power sensor is measured the microwave signal power P that is coupled out separately by two MEMS fixed beam structures 1, P 2When two MEMS fixed beam structure distance L were determined, there was a phase differential that is directly proportional to microwave signal frequency to be measured in two microwave signals that are coupled out Merit is closed the power P of the composite signal of device 3With this phase differential There is the relation of a cosine function:
Figure FDA00002772761400023
Four MEMS indirect-type microwave power sensors detect the power P of microwave signal to be measured, the power P of microwave signal that the MEMS clamped beam is coupled out based on the Seebeck principle 1, P 2And merit is closed the power P of device composite signal 3Size, and with DC voltage form V, V 1, V 2And V 3The output measurement result, based on formula (1), the frequency of microwave signal to be measured is:
f = c 2 πL ϵ re arccos V 3 - 1 2 V 1 - 1 2 V 2 V 1 V 2 - - - ( 2 )
Wherein, c is the light velocity, ε erEffective dielectric constant for the CPW transmission line.
7. the detection method of the microwave detection system based on clamped beam and indirect type power sensor according to claim 6, it is characterized in that changing the voltage on drive electrode in MEMS reconfigurable antenna and MEMS adjustable filter by control circuit, thereby adjust the centre frequency of MEMS reconfigurable antenna and MEMS adjustable filter, to realize microwave signal frequency in a certain characteristic frequency situation and the detection of power.
CN201310027752.2A 2013-01-18 2013-01-18 Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system Expired - Fee Related CN103116072B (en)

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