CN103107215A - Solar cell and forming method thereof - Google Patents
Solar cell and forming method thereof Download PDFInfo
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- CN103107215A CN103107215A CN2011103594544A CN201110359454A CN103107215A CN 103107215 A CN103107215 A CN 103107215A CN 2011103594544 A CN2011103594544 A CN 2011103594544A CN 201110359454 A CN201110359454 A CN 201110359454A CN 103107215 A CN103107215 A CN 103107215A
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- layer
- solar cell
- patterning
- cap layer
- metal grid
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell and a forming method thereof. The solar cell comprises a semiconductor overlapping layer located on a substrate, a window layer located on the semiconductor overlapping layer, a patterned top cover layer located on the window layer, and a discontinuous chemical compound overlapping layer. The upper surface of the window layer between the side faces of the discontinuous chemical compound overlapping layer and the side faces of the patterned top cover layer, and the side faces of the patterned top cover layer are fully covered by a conformal layer. The solar cell further comprises a metal grid line located on the patterned top cover layer.
Description
Technical field
The present invention relates to a kind of solar cell, especially relate to a kind of III-V compounds of group multi-junction solar cells.
Background technology
It is that solar cell and III-V compound semiconductor are the large class of solar cell two that present solar cell (solar cell) mainly can be divided into Si semiconductor.With regard to energy conversion efficiency, the III-V compound semiconductor is that solar cell is that solar cell is high than Si semiconductor, thereby is fit to develop high-effect solar cell.In addition, III-V compounds of group solar cell device can be divided into again single junction (single-junction) and two kinds, many junctions (multi-junction) solar cell.Compared to single junction solar cells, multi-junction solar cells can absorb broader solar spectrum energy by many junctions compound semiconductor, and significantly improves conversion efficiency.
In the prior art, usually can be at the upper anti-reflecting layer that forms of the window layer (window layer) of solar cell, to reduce the sun reflection of light of incident solar cell.Generally speaking, such anti-reflecting layer often forms by electron beam evaporation plating method and sputtering method.Yet electron beam evaporation plating method and sputtering method can't be completed conformal deposited, even therefore often can make anti-reflecting layer can't cover the window layer cap layer (cap layer) of solar cell fully.
In sum, industry is badly in need of a kind of solar cell that can address the above problem at present.
Summary of the invention
Because the problems referred to above, the present invention provides a kind of solar cell in one embodiment, comprising:
Substrate;
Semiconductor laminated, be positioned in this substrate;
The window layer, be positioned at this semiconductor laminated on;
The cap layer of case is positioned on this window layer;
Metal grid lines is positioned on the cap layer of this case;
Discontinuous compound lamination, have a first and a second portion, this first covers this metal grid lines upper surface, this second portion covers a third part of this window layer upper surface, wherein, form a defect area between the cap layer side of this second portion side, this case and the part lower surface of this metal grid lines, wherein, in this defect area, the cap layer side of one the 4th part of this window layer upper surface and this case is covered by this compound lamination at least; And
Conforma layer at least conformally covers this undercut area.
In addition, the present invention provides a kind of formation method of solar cell in another embodiment, comprising:
One substrate is provided;
Forming semiconductor is stacked in this substrate;
Form a window layer on this is semiconductor laminated;
Form a cap layer on this window layer;
Form a metal grid lines on this cap layer;
This cap layer of patterning and form the cap layer of a patterning, wherein the frontal projected area of this metal grid lines is greater than the frontal projected area of the cap layer of this patterning;
Form a discontinuous compound lamination, this compound lamination has a first and a second portion, this first covers this metal grid lines upper surface, this second portion covers a third part of this window layer upper surface, and form a defect area between the cap layer side of this second portion side, this patterning and lower surface that this metal grid lines exposes, expose at least one the 4th part of this window layer upper surface and the cap layer side of this patterning; And
Form a conforma layer, at least conformally cover this undercut area.
Description of drawings
Fig. 1～Fig. 7 is the schematic diagram of the solar cell making process of one embodiment of the invention.
The main element symbol description
10～substrate
12～semiconductor laminated
14～window layer
16～cap layer
The cap layer figure of 16a～case
18～metal grid lines
The first of 20a～compound lamination
The second portion of 20b～compound lamination
22～defect area
24～conforma layer
Embodiment
Better example hereinafter with reference to description of drawings this case.
Fig. 1～Fig. 6 illustrates the schematic diagram of the solar cell making process of one embodiment of the invention.
At first, as shown in Figure 1, provide a substrate 10, and form semiconductor lamination 12 in substrate 10.Semiconductor laminated 12 can be the combination of the existing N-shaped semi-conducting material of any solar cell and p-type semi-conducting material, for example the staggered formation of N-shaped semi-conducting material and p-type semi-conducting material is semiconductor laminated, and N-shaped semi-conducting material and p-type semi-conducting material are for example the combinations of n-SiGe and p-SiGe or other N-shaped compound semiconductor materials and p-type compound semiconductor materials.Semiconductor laminated 12 formation method is well known in solar battery technology, does not repeat them here.
Then, as shown in Figure 2, form a window layer 14 on semiconductor laminated 12.Window layer 14 can be the existing semi-conducting material of any solar cell, is for example InGaP, InAlP or other compound semiconductor materials.The formation method of window layer 14 is well known in solar battery technology, does not repeat them here.
Afterwards, as shown in Figure 3, form a cap layer 16 and be covered on window layer 14 comprehensively.Cap layer 16 can be the existing material of any solar cell, is for example GaAs, InGaAs or other compound semiconductor materials.The formation method of cap layer 16 can adopt film build method commonly used in physical deposition method, chemical deposition or other solar battery technology, does not repeat them here.
Then, as shown in Figure 4, form a metal grid lines 18 on cap layer 16.Metal grid lines 18 can be the existing material of any solar cell, is for example Au, Ag or other metal or alloy material.The formation method of metal grid lines 18 can adopt method commonly used in the print process such as wire mark or other solar battery technology, does not repeat them here.
Afterwards, as shown in Figure 5, this cap layer 16 of patterning and form the cap layer 16a of a patterning, the step of this cap layer 16 of this patterning comprises take metal grid lines 18 as mask cap layer 16 is imposed isotropic etching.Note that the cap layer 16a that has formed patterning after isotropic etching, and the frontal projected area of metal grid lines 18 is greater than the frontal projected area of the cap layer 16a of patterning.That is to say, metal grid lines 18 belows have formed defect area (that is so-called " undercut area "), and this defect area is with label 22 expressions of Fig. 6.The step of this patterning cap layer 16 also can adopt existing method, does not repeat them here.
Then, as shown in Figure 6, form a discontinuous compound lamination 20a, 20b.Compound lamination 20a, 20b have a 20a of first and a second portion 20b.The 20a of first covering metal grid line 18 upper surfaces, in addition, second portion 20b covers a third part I of window layer 14 upper surface.Please pay special attention to, be namely defect area 22 between the lower surface that the cap layer 16a side of second portion 20b side, patterning and metal grid lines 18 expose, and expose at least the cap layer 16a side of one the 4th part II and the patterning of window layer 14 upper surface.The material of this compound lamination 20a, 20b can adopt material or its combinations such as titanium oxide, aluminium oxide, and the formation method can adopt film build method commonly used in vapour deposition method (evaporation), sputtering method (sputtering) or other solar battery technology, does not repeat them here.Yet, because vapour deposition method (evaporation), sputtering method (sputtering) are not the genus conformal deposition techniques, therefore can't form conformal compound lamination, so that defect area 22 still exposes.Note that because defect area 22 can allow extraneous disadvantage factor (for example, aqueous vapor) affect the performance of solar cell device, so the invention of this case takes the step of subsequent figure 7 and method to address this problem.
Then, as shown in Figure 7, form a conforma layer 24, at least conformally cover undercut area 22 and compound lamination 20a, 20b.The material of conforma layer 24 can adopt silicon oxynitride, and the formation method can adopt chemical vapour deposition technique.In other embodiments, the material of conforma layer 24 can adopt silica, silicon nitride or its combination.That is conforma layer 24 can be single silicon oxynitride layer, silicon oxide layer, silicon nitride layer, can be also a lamination that is made of said silicon oxide and above-mentioned silicon nitride layer.
In sum, the present embodiment provides a kind of solar cell as shown in Figure 7.This solar cell comprises: a substrate 10, be positioned at semiconductor lamination 12 in substrate 10, be positioned at a window layer 14 on semiconductor laminated 12, be positioned at the patterning on window layer 14 cap layer 16a, be positioned at a metal grid lines 18, a discontinuous compound lamination 20a, 20b and a conforma layer 24 on the cap layer 16a of patterning.Wherein, compound lamination 20a, 20b have a 20a of first and a second portion 20b, the 20a of its first covering metal grid line 18 upper surfaces, and its second portion 20b covers a third part I of these window layer 14 upper surfaces.Especially, between the part lower surface of the second portion 20b side of compound lamination 20a, 20b, the cap layer 16a side of patterning and metal grid lines 18, a defect area 22 is arranged, wherein, in defect area 22, cap layer 16a side not combined thing lamination 20a, the 20b of one the 4th part II of window layer 14 upper surface and patterning cover at least.24 of conforma layers conformally cover compound lamination 20a, 20b, metal grid lines 18 and defect area 22.
In another embodiment, conforma layer 24 can only conformally cover defect area 22.
In the present embodiment, conforma layer 24 is the formed silicon oxynitride layer of chemical vapour deposition technique.In another embodiment, conforma layer 24 is formed other compound layer of chemical vapour deposition technique.
In the present embodiment, compound lamination 20a, 20b be the lamination of aluminium oxide and titanium oxide and with conforma layer 24 as an anti-reflection structure.
In the present embodiment, compound lamination 20a, 20b form by electron beam evaporation plating method or sputtering method.
In the present embodiment, the frontal projected area of metal grid lines 18 is greater than the frontal projected area of the cap layer 16a of this patterning.
Although the present invention explains with some most preferred embodiments, be skillful in this operator and can make various multi-form changes not breaking away under the present invention spirit and category.The above act implemented only in order to this case to be described, and be non-in order to limit the scope of this case.Such as do not disobey various modifications or the variation that this case spirit is engaged in, all belong to this case claim.
Claims (12)
1. solar cell comprises:
Substrate;
Semiconductor laminated, be positioned in this substrate;
The window layer, be positioned at this semiconductor laminated on;
The cap layer of patterning is positioned on this window layer;
Metal grid lines is positioned on the cap layer of this patterning;
Discontinuous compound lamination, have first and second portion, this first covers this metal grid lines upper surface, this second portion covers a third part of this window layer upper surface, wherein, form a defect area between the cap layer side of this second portion side, this patterning and the part lower surface of this metal grid lines, wherein, in this defect area, the cap layer side of one the 4th part of this window layer upper surface and this patterning is covered by this compound lamination at least; And
Conforma layer at least conformally covers this undercut area.
2. solar cell as claimed in claim 1, wherein this conforma layer also conformally covers this compound lamination and this metal grid lines.
3. solar cell as claimed in claim 1, wherein this conforma layer is to form by chemical vapour deposition technique.
4. solar cell as claimed in claim 1, wherein this conforma layer is the formed silicon oxynitride layer of chemical vapour deposition technique, one silica layer, a silicon nitride layer or the lamination that is made of this silicon oxide layer and this silicon nitride layer.
5. solar cell as claimed in claim 1, wherein this compound lamination lamination that is aluminium oxide and titanium oxide.
6. solar cell as claimed in claim 1, wherein this compound lamination and this conforma layer are as an anti-reflection structure.
7. solar cell as claimed in claim 1, wherein this compound lamination is to form by electron beam evaporation plating method or sputtering method.
8. solar cell as claimed in claim 1, wherein the frontal projected area of this metal grid lines is greater than the frontal projected area of the cap layer of this patterning.
9. solar cell as claimed in claim 8, wherein this defect area is a undercut area.
10. the formation method of a solar cell comprises:
One substrate is provided;
Forming semiconductor is stacked in this substrate;
Form a window layer on this is semiconductor laminated;
Form a cap layer on this window layer;
Form a metal grid lines on this cap layer;
This cap layer of patterning and form the cap layer of a patterning, wherein the frontal projected area of this metal grid lines is greater than the frontal projected area of the cap layer of this patterning;
Form a discontinuous compound lamination, this compound lamination has first and second portion, this first covers this metal grid lines upper surface, this second portion covers a third part of this window layer upper surface, and form a defect area between the cap layer side of this second portion side, this patterning and lower surface that this metal grid lines exposes, expose at least one the 4th part of this window layer upper surface and the cap layer side of this patterning; And
Form a conforma layer, at least conformally cover this undercut area.
11. the formation method of solar cell as claimed in claim 10, this compound lamination is to form by electron beam evaporation plating method or sputtering method.
12. the formation method of solar cell as claimed in claim 10, wherein the step of this this cap layer of patterning comprises take this metal grid lines as mask this cap layer is imposed isotropic etching, and this conforma layer is to form by chemical vapour deposition technique.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103594544A CN103107215A (en) | 2011-11-14 | 2011-11-14 | Solar cell and forming method thereof |
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| CN2011103594544A CN103107215A (en) | 2011-11-14 | 2011-11-14 | Solar cell and forming method thereof |
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| CN103107215A true CN103107215A (en) | 2013-05-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122499A (en) * | 1994-05-04 | 1996-05-15 | 国际商业机器公司 | Multi-layer conductor leads in a magnetoresistive head |
| US6315875B1 (en) * | 1999-09-16 | 2001-11-13 | Tdk Corporation | Method of manufacturing thin-film magnetic head and method of manufacturing magnetoresistive device |
| US20040069746A1 (en) * | 2002-10-15 | 2004-04-15 | Richard Hsiao | Method of removing magnetoresistive sensor cap by reactive ion etching |
| US7126052B2 (en) * | 2002-10-02 | 2006-10-24 | The Boeing Company | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices |
-
2011
- 2011-11-14 CN CN2011103594544A patent/CN103107215A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122499A (en) * | 1994-05-04 | 1996-05-15 | 国际商业机器公司 | Multi-layer conductor leads in a magnetoresistive head |
| US6315875B1 (en) * | 1999-09-16 | 2001-11-13 | Tdk Corporation | Method of manufacturing thin-film magnetic head and method of manufacturing magnetoresistive device |
| US7126052B2 (en) * | 2002-10-02 | 2006-10-24 | The Boeing Company | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices |
| US20040069746A1 (en) * | 2002-10-15 | 2004-04-15 | Richard Hsiao | Method of removing magnetoresistive sensor cap by reactive ion etching |
Non-Patent Citations (1)
| Title |
|---|
| IBM, ET. AL.: "Skirt Removal Process for Metal Lift-Off", 《IBM TECHNICAL DISCLOSURE BULLETIN》, vol. 27, no. 5, 1 October 1984 (1984-10-01), pages 2 - 3 * |
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Application publication date: 20130515 |