CN103094293A - 用于半导体装置中的衬垫下电路的衬垫设计 - Google Patents
用于半导体装置中的衬垫下电路的衬垫设计 Download PDFInfo
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- CN103094293A CN103094293A CN2012104323436A CN201210432343A CN103094293A CN 103094293 A CN103094293 A CN 103094293A CN 2012104323436 A CN2012104323436 A CN 2012104323436A CN 201210432343 A CN201210432343 A CN 201210432343A CN 103094293 A CN103094293 A CN 103094293A
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/288,731 US8569856B2 (en) | 2011-11-03 | 2011-11-03 | Pad design for circuit under pad in semiconductor devices |
US13/288,731 | 2011-11-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103094293A true CN103094293A (zh) | 2013-05-08 |
CN103094293B CN103094293B (zh) | 2015-10-21 |
Family
ID=48206676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210432343.6A Active CN103094293B (zh) | 2011-11-03 | 2012-11-02 | 用于半导体装置中的衬垫下电路的衬垫设计 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8569856B2 (zh) |
CN (1) | CN103094293B (zh) |
HK (1) | HK1183161A1 (zh) |
TW (1) | TWI495096B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103280449A (zh) * | 2013-05-16 | 2013-09-04 | 华进半导体封装先导技术研发中心有限公司 | 一种背照图像传感器的制造方法 |
CN104576664A (zh) * | 2013-10-23 | 2015-04-29 | 豪威科技(上海)有限公司 | 一种背照式cmos传感器及其制造方法 |
CN106910757A (zh) * | 2015-10-29 | 2017-06-30 | 三星电子株式会社 | 层叠型半导体器件 |
CN110098165A (zh) * | 2018-01-30 | 2019-08-06 | 络达科技股份有限公司 | 接垫结构、应用该接垫结构的半导体芯片及其制造方法 |
CN110998825A (zh) * | 2017-08-04 | 2020-04-10 | 美光科技公司 | 利用外部端子进行写入 |
CN113497070A (zh) * | 2020-04-01 | 2021-10-12 | 爱思开海力士有限公司 | 图像传感器装置 |
CN113644081A (zh) * | 2020-05-11 | 2021-11-12 | 爱思开海力士有限公司 | 图像传感器装置 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8569856B2 (en) | 2011-11-03 | 2013-10-29 | Omnivision Technologies, Inc. | Pad design for circuit under pad in semiconductor devices |
JP2013143532A (ja) * | 2012-01-12 | 2013-07-22 | Toshiba Corp | 半導体装置 |
KR20130106619A (ko) * | 2012-03-20 | 2013-09-30 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US8946784B2 (en) * | 2013-02-18 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for image sensor packaging |
US9041206B2 (en) * | 2013-03-12 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
US9722099B2 (en) * | 2013-03-14 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film |
US9398237B2 (en) | 2014-04-30 | 2016-07-19 | Sony Corporation | Image sensor with floating diffusion interconnect capacitor |
US9324755B2 (en) * | 2014-05-05 | 2016-04-26 | Semiconductor Components Industries, Llc | Image sensors with reduced stack height |
US9252179B2 (en) * | 2014-06-13 | 2016-02-02 | Visera Technologies Company Limited | Image sensor structures |
US9634053B2 (en) * | 2014-12-09 | 2017-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor chip sidewall interconnection |
US9748301B2 (en) * | 2015-01-09 | 2017-08-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US9490282B2 (en) * | 2015-03-19 | 2016-11-08 | Omnivision Technologies, Inc. | Photosensitive capacitor pixel for image sensor |
US9818776B2 (en) | 2015-04-08 | 2017-11-14 | Semiconductor Components Industries, Llc | Integrating bond pad structures with light shielding structures on an image sensor |
US10217783B2 (en) | 2015-04-08 | 2019-02-26 | Semiconductor Components Industries, Llc | Methods for forming image sensors with integrated bond pad structures |
TWI692859B (zh) * | 2015-05-15 | 2020-05-01 | 日商新力股份有限公司 | 固體攝像裝置及其製造方法、以及電子機器 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
US9773829B2 (en) * | 2016-02-03 | 2017-09-26 | Omnivision Technologies, Inc. | Through-semiconductor-via capping layer as etch stop layer |
JP2017183407A (ja) * | 2016-03-29 | 2017-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10109666B2 (en) | 2016-04-13 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pad structure for backside illuminated (BSI) image sensors |
KR102430496B1 (ko) | 2017-09-29 | 2022-08-08 | 삼성전자주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
KR102483548B1 (ko) | 2017-10-31 | 2023-01-02 | 삼성전자주식회사 | 이미지 센싱 장치 |
CN110211977B (zh) * | 2019-04-30 | 2021-11-30 | 德淮半导体有限公司 | 三维堆栈式cis及其形成方法 |
KR20210122526A (ko) * | 2020-04-01 | 2021-10-12 | 에스케이하이닉스 주식회사 | 이미지 센서 장치 |
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US20090186473A1 (en) * | 2007-09-19 | 2009-07-23 | Xiaofeng Fan | Methods of Forming a Conductive Interconnect in a Pixel of an Imager and in Other Integrated Circuitry |
CN101689555A (zh) * | 2007-03-02 | 2010-03-31 | 普廷数码影像控股公司 | 背侧照射的成像器及制作背侧照射的成像器的方法 |
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JP4046069B2 (ja) * | 2003-11-17 | 2008-02-13 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
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-
2011
- 2011-11-03 US US13/288,731 patent/US8569856B2/en active Active
-
2012
- 2012-10-31 TW TW101140394A patent/TWI495096B/zh active
- 2012-11-02 CN CN201210432343.6A patent/CN103094293B/zh active Active
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2013
- 2013-09-05 HK HK13110328.7A patent/HK1183161A1/zh unknown
- 2013-10-14 US US14/052,944 patent/US8729712B2/en active Active
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CN101689555A (zh) * | 2007-03-02 | 2010-03-31 | 普廷数码影像控股公司 | 背侧照射的成像器及制作背侧照射的成像器的方法 |
US20090186473A1 (en) * | 2007-09-19 | 2009-07-23 | Xiaofeng Fan | Methods of Forming a Conductive Interconnect in a Pixel of an Imager and in Other Integrated Circuitry |
US20100246152A1 (en) * | 2009-03-30 | 2010-09-30 | Megica Corporation | Integrated circuit chip using top post-passivation technology and bottom structure technology |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103280449A (zh) * | 2013-05-16 | 2013-09-04 | 华进半导体封装先导技术研发中心有限公司 | 一种背照图像传感器的制造方法 |
CN103280449B (zh) * | 2013-05-16 | 2016-06-01 | 华进半导体封装先导技术研发中心有限公司 | 一种背照图像传感器的制造方法 |
CN104576664A (zh) * | 2013-10-23 | 2015-04-29 | 豪威科技(上海)有限公司 | 一种背照式cmos传感器及其制造方法 |
CN104576664B (zh) * | 2013-10-23 | 2018-04-20 | 豪威科技(上海)有限公司 | 一种背照式cmos传感器及其制造方法 |
CN106910757A (zh) * | 2015-10-29 | 2017-06-30 | 三星电子株式会社 | 层叠型半导体器件 |
CN106910757B (zh) * | 2015-10-29 | 2020-10-23 | 三星电子株式会社 | 层叠型半导体器件 |
CN110998825A (zh) * | 2017-08-04 | 2020-04-10 | 美光科技公司 | 利用外部端子进行写入 |
CN110998825B (zh) * | 2017-08-04 | 2023-10-20 | 美光科技公司 | 利用外部端子进行写入 |
CN110098165A (zh) * | 2018-01-30 | 2019-08-06 | 络达科技股份有限公司 | 接垫结构、应用该接垫结构的半导体芯片及其制造方法 |
CN113497070A (zh) * | 2020-04-01 | 2021-10-12 | 爱思开海力士有限公司 | 图像传感器装置 |
CN113644081A (zh) * | 2020-05-11 | 2021-11-12 | 爱思开海力士有限公司 | 图像传感器装置 |
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CN103094293B (zh) | 2015-10-21 |
US8729712B2 (en) | 2014-05-20 |
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US8569856B2 (en) | 2013-10-29 |
TW201327792A (zh) | 2013-07-01 |
US20140035089A1 (en) | 2014-02-06 |
US20130113065A1 (en) | 2013-05-09 |
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