CN103094254A - 发光二极管模块 - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
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- 239000013078 crystal Substances 0.000 claims description 48
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
本发明提供一种发光二极管模块,其在至少一硅基板上设一发光二极管晶粒,硅基板以半导体制程一次成型一温度感测单元及一光感测单元,其中温度感测单元设在发光二极管晶粒底部,且光感测单元分布在发光二极管晶粒的周围,发光二极管晶粒在硅基板上被封装在一光学封装胶体的范围内,且三者在硅基板上分别电性连接复数电极,此复数电极可供与外部构件电性连接。
Description
技术领域
本发明系有关一种发光二极管,尤指一种具有温度感测以及光感测的发光二极管。
背景技术
由于发光二极管(Light Emitting Diode,LED)具有高发光效率、长使用寿命与低电能消耗的特性,以及在政府大力推广室内外固态照明下,已逐渐取代传统高污染及高耗能的照明光源,且功能性也已由传统单纯的照明功能延伸至多功能的应用,如未来相当具发展潜力的发光二极管可见光通讯,发光效益也因许多附加功能的整合,照明的需求也由以往低亮度而逐渐提升至高亮度。
然而,发光二极管在多功能产品化的应用过程中,却也面临着更多的技术挑战,例如高功率的发光二极管应用在高亮度照明时容易产生高温,导致辉度值降低以及色温产生变化,同时也会影响组件的可靠度及寿命,因此需要搭配大型的散热装置使组件保持在正常的操作温度。此外,晶粒的光电效应会随着使用的时间及恶劣的环境而衰减,导致在相同的驱动电流下,其辉度值与色温依旧产生变化,进而影响照明的质量,故必须以光和温度感测且透过讯号回授加以控制。
按台湾地区专利证号第I312141、M397541及I345429号等专利,三者皆揭露发光二极管透过外部的光和温度感测组件以及回授控制电路而分别进行亮度大小及操作温度的控制,但是整体搭配的***过于庞大、复杂且价格昂贵,同时无法满足实时监控的能力。
又按台湾地区专利证号第I234300及M288432号等专利,此二者皆揭露于发光二极管的内部设有温度感测组件,虽此述的温度感测组件可于发光二极管中内建而测得发光二极管发光时的反应温度,惟所揭露的温度感测组件与发光二极管皆以不同的制程制作完成后再加以组装,故于大量制作的发光二极管制程中必然无法提高制程效率。
因此,如何解决上述习用发光二极管的问题者,即为本创作的主要重点所在。
发明内容
本发明的主要目的,在于解决上述的问题而提供一种发光二极管模块,透过半导体制程而简化发光二极管的组装,相对可提高发光二极管制程的效率。
为达前述的目的,本发明在一硅基板上设至少一发光二极管晶粒,该硅基板以半导体制程一次成型一温度感测单元及一光感测单元,其中该温度感测单元设在该发光二极管晶粒底部,且该光感测单元分布在该发光二极管晶粒的周围,至少该发光二极管晶粒在硅基板上被封装在一光学封装胶体的范围内,且该三者在硅基板上分别电性连接复数电极,此复数电极可供与外部构件电性连接。
本发明的上述及其它目的与优点,不难从下述所选用实施例的详细说明与附图中,获得深入了解。
当然,本发明在某些另件上,或另件的安排上容许有所不同,但所选用的实施例,则于本说明书中,予以详细说明,并于附图中展示其构造。
附图说明
图1系本发明第一实施例的侧面剖视示意图。
图2系图1的A处虚拟框线部位的局部俯视示意图。
图3系本发明第二实施例的侧面剖视示意图。
图4系本发明第三实施例的侧面剖视示意图。
图5系本发明第四实施例的侧面剖视示意图。
【主要组件符号说明】
硅基板1 硅蚀穿绝热槽10
导热胶11 隔热层12
绝缘层13 发光二极管晶粒2
温度感测单元3 固胶30
光感测单元4 光学封装胶体5
导热片6 发光二极管驱动电极70
金属导线700 电极衬垫701
温度感测电极71 金属导线710
光感测电极72 金属导线720
光学封装胶体5A 光学封装胶体5B
透气孔50B
具体实施方式
请参阅图1至图2,图中所示者为本发明所选用的实施例结构,此仅供说明之用,在专利申请上并不受此种结构的限制。
本实施例提供一种发光二极管模块,如图1至2所示,此发光二极管模块主要系在一硅基板1上设一发光二极管晶粒2,该硅基板1以半导体制程一次成型一温度感测单元3及一光感测单元4,其中该温度感测单元3设在该发光二极管晶粒2底部,该光感测单元4则分布在该发光二极管晶粒2的周围,该发光二极管晶粒2、温度感测单元3及光感测单元4三者在硅基板1上被封装在一光学封装胶体5的范围内,此光学封装胶体5于本实施例中为实心的胶体,且材质为环氧树脂,可防止该发光二极管晶粒2、温度感测单元3及光感测单元4三者与空气直接接触,且该三者在硅基板1上分别电性连接复数电极,此复数电极可供与外部构件电性连接。
本实施例的硅基板1系一带有电子的N型硅芯片,本实施例的光感测单元4系一带有电洞的P型电性掺杂区,此述光感测单元4系透过微影制程及电性掺杂的方式,该发光二极管晶粒2设于该硅基板1上。因此,藉由硅基板1及光感测单元4间P-N接面的半导体特性,当发光二极管晶粒2的侧面或是经由反射过程产生的光源照射在该光感测单元4时,经由电子与电洞的游移,便可将光的能量转换成电动势的输出,而照射光源的大小将与输出的电流(或电动势)成特定的关系,因此透过该输出讯号便可以侦测发光二极管晶粒的亮度大小。
如图1至2所示,本实施例的温度感测单元3系电阻式金属薄膜,透过薄膜沉积及微影制程成形在硅基板1上,在此温度感测单元3上透过涂布固胶30,该发光二极管晶粒2以底部于该温度感测单元3上以此固胶30固晶黏着于硅基板1上。
如图1至2所示,本实施例的硅基板1在该发光二极管晶粒2的周围环设一硅蚀穿绝热槽10,该发光二极管晶粒2相对位在此硅蚀穿绝热槽10之内,而该光感测单元4则相对位在硅蚀穿绝热槽10之外。在为N型硅芯片的硅基板1的发光二极管晶粒2固晶处周围设该硅蚀穿绝热槽10,其目的是隔绝发光二极管晶粒2产生的热直接传导到硅基板1及光感测单元4的P-N接面,避免因热的变化而影响光源量测值。
如图1所示,本实施例在硅基板1的底部设有一导热片6,此导热片6的材质于本实施例中为硅(亦可于其它实施态样中使用金属或陶瓷为材质),硅基板1于该硅蚀穿绝热槽10内的底部与该导热片6间设有导热胶11。由于硅本身具有极佳的热导热系数(约1.57 W/cm℃),因此透过为N型硅芯片的硅基板1、导热胶11以及导热片6的堆栈与黏着,可以快速并有效的将发光二极管晶粒2产生的热能传递到周遭环境,以保持组件在适当的工作温度;同时因为硅基板1的机械性质与发光二极管晶粒2相近,因此可以减少热应力产生的影响,以提升产品的可靠度与疲劳寿命。至于多晶排列或是更大功率的光源需求,后续亦可再透过额外的热传导或是强制对流的方式,以降低其操作温度。
如图1所示,本实施例的硅基板1在该硅蚀穿绝热槽10外的底部与该导热片6间设有隔热层12,此设在该硅基板1与导热片6之间的隔热层12,其功能是避免导热片6的温度由下而上的快速传递热量至硅基板1及光感测单元4的P-N接面,进而影响光感测区域的阻值变化。
如图1所示,本实施例的硅基板1的顶部在硅蚀穿绝热槽10内跟外皆设有绝缘层13,此绝缘层13系于硅基板1上方以沉积方式成形。当发光二极管晶粒2在操作过程中产生的热能,会迅速的经由固胶30传导至温度感测单元3,由于电阻式金属薄膜的电性(电阻值)会随着温度的改变而产生变化,以一般常用的白金金属材料为例,其电阻值会随着温度的增加而增加,因此透过电阻式金属薄膜两端的电阻变化便能推测发光二极管晶粒2的温度大小。上述固胶30的材料主要有两种,包括高分子聚合物以及金属化合物,其中以金属化合物的固胶(例如银胶)具有较佳的热传效果,且厚度一般大概都在数十微米,因此胶体上下表面的温度梯度较小,即温度感测单元3可以很精确的侦测发光二极管晶粒2的表面温度。
如图1至2所示,所述的复数电极设于该硅蚀穿绝热槽外的硅基板1顶部的绝缘层13上,此复数电极包含二发光二极管驱动电极70、二温度感测电极71以及二光感测电极72。如图1所示,该二发光二极管驱动电极70分别利用金属导线700于对应电极(于本实施例中为直流电源的正负电极)以打线的方式与该发光二极管晶粒2电性连接,且在金属导线700上设一电极衬垫701供与外部构件电性连接;该二温度感测电极71亦分别利用金属导线710于对应电极(于本实施例中亦为直流电源的正负电极)以打线的方式与该温度感测单元3电性连接,且亦于金属导线710上设一电极衬垫(图中未示)供与外部构件电性连接;所述二光感测电极72,其一光感测电极72利用金属导线720贯穿绝缘层13而嵌入该硅基板1而连性连接,另一光感测电极72亦利用金属导线720亦贯穿绝缘层13而嵌入该光感测单元4电性连接,此二光感测电极分别在金属导线720上设一电极衬垫(图中未示),俾将硅基板1的N极电性以及光感测单元4的P极电性个别引导至硅基板1的表面,供与外部构件电性连接。
由上述的说明不难发现本创作的优点,在于,该硅基板1以半导体制程一次成型一温度感测单元3及一光感测单元4,并将发光二极管晶粒2以光学封装胶体5封装即完成发光二极管模块,同时具有对发光二极管发光温度感测以及光感测的功能,而可对发光二极管的亮度自适应调变,且具有发光二极管节能省电及寿命长等优点,相较于习知的发光二极管而言,可避免透过外部光及温度感测组件的监控***复杂且价格昂贵并同时无法满足实时监控的问题,且能简化发光二极管模块的组装,若大量制作时,相对可提高发光二极管制程的效率。
当然,本创作仍存在许多例子,其间仅细节上的变化。请参阅图3,其系本创作的第二实施例,与第一实施例同样包含一硅基板1及一发光二极管晶粒2,且硅基板1同样以半导体制程一次成型一温度感测单元3及一光感测单元4,本实施例与第一实施例的主要差异,在于该光学封装胶体5A在硅基板1上的封装范围为仅封装该发光二极管晶粒2,可防止发光二极管晶粒2与空气直接接触。
请参阅图4,其系本创作的第三实施例,与第一实施例同样包含一硅基板1及一发光二极管晶粒2,且硅基板1同样以半导体制程一次成型一温度感测单元3及一光感测单元4,本实施例与第一实施例的主要差异,在于该光学封装胶体5B为空心的薄壳,该光学封装胶体5B因空心而内含空气,提供良好的散热效果,且当发光二极管晶粒2发光时,如图4所示,光会由光学封装胶体5B的薄壳的内面反射,以增加反射光。
又如图5所示,为本创作的第四实施例,系于第三实施例的结构基础下,于光学封装胶体5B内对该发光二极管晶粒2封装一如第二实施例的实心的光学封装胶体5A,设此光学封装胶体5A可防止发光二极管晶粒2与空气接触,且光学封装胶体5B在薄壳上具有若干供光学封装胶体5B内的空气向外对流的透气孔50B,亦可达到良好的散热效果,且光亦由光学封装胶体5B的薄壳的内面反射,亦可增加反射光。
以上所述实施例的揭示系用以说明本发明,并非用以限制本发明,故举凡数值的变更或等效组件的置换仍应隶属本发明的范畴。
由以上详细说明,可使熟知本项技艺者明了本发明的确可达成前述目的,实已符合专利法的规定,爰提出专利申请。
Claims (13)
1.一种发光二极管模块,其特征在于,其在一硅基板上设至少一发光二极管晶粒,该硅基板以半导体制程一次成型一温度感测单元及一光感测单元,其中该温度感测单元设在该发光二极管晶粒底部,且该光感测单元分布在该发光二极管晶粒的周围,至少该发光二极管晶粒在硅基板上被封装在一光学封装胶体的范围内,且该三者在硅基板上分别电性连接复数电极,此复数电极可供与外部构件电性连接。
2.如权利要求1所述的发光二极管模块,其特征在于,该硅基板上系一带有电子的N型硅芯片,该光感测单元系一于该硅基板中所设的P型电性掺杂区,此P型电性掺杂区环设在该发光二极管晶粒的周围,且温度感测单元设在发光二极管晶粒及硅基板之间。
3.如权利要求2所述的发光二极管模块,其特征在于,该温度感测单元为电阻式金属薄膜而透过薄膜沉积及微影制程成形在硅基板上,在该温度感测单元上涂布固胶,该发光二极管晶粒以底部于该温度感测单元上以此固胶固晶黏着于硅基板上,此述固胶的材料为高分子聚合物以及金属化合物其中之一者。
4.如权利要求3所述的发光二极管模块,其特征在于,该硅基板在该发光二极管晶粒的周围环设一阻隔热往外传导的硅蚀穿绝热槽,该发光二极管晶粒相对位在此硅蚀穿绝热槽之内,而该P型电性掺杂区则相对位在硅蚀穿绝热槽之外。
5.如权利要求4所述的发光二极管模块,其特征在于,在该硅基板的底部设有一导热片,此导热片的材质为硅、金属及陶瓷其中之一者,该硅基板在硅蚀穿绝热槽内的底部与该导热片间设有导热胶,且硅基板在该硅蚀穿绝热槽外的底部与该导热片间设有隔热层。
6.如权利要求5所述的发光二极管模块,其特征在于,该硅基板的顶部在硅蚀穿绝热槽内跟外皆设有绝缘层,且温度感测单元位在该硅蚀穿绝热槽内的硅基板顶部的绝缘层上。
7.如权利要求6所述的发光二极管模块,其特征在于,所述的复数电极设于该硅蚀穿绝热槽外的硅基板顶部的绝缘层上,所述电极系以一金属导线电性传输,且以一设于金属导线上的电极衬垫供与外部构件电性连接。
8.如权利要求7所述的发光二极管模块,其特征在于,所述的复数电极包含二发光二极管驱动电极、二温度感测电极以及二光感测电极,其中该二发光二极管驱动电极分别以对应电极与该发光二极管晶粒电性连接,该二温度感测电极分别以对应电极与该温度感测单元电性连接,以其一光感测电极与该硅基板连性连接,且另一光感测电极与该P型电性掺杂区电性连接。
9.如权利要求8所述的发光二极管模块,其特征在于,该二发光二极管驱动电极分别以金属导线与该发光二极管晶粒间打线而对应地电性连接;该二温度感测电极分别以金属导线与该温度感测单元间以打线而对应地电性连接;其中之一光感测电极以金属导线嵌入硅基板电性连接,另一光感测电极以金属导线嵌入P型电性掺杂区电性连接。
10.如权利要求1所述的发光二极管模块,其特征在于,该光学封装胶体为实心的胶体,且在硅基板上的封装范围包含发光二极管晶粒、温度感测单元及光感测单元三者的范围。
11.如权利要求1所述的发光二极管模块,其特征在于,该光学封装胶体为实心的胶体,且在硅基板上的封装范围为仅封装该发光二极管晶粒。
12.如权利要求1所述的发光二极管模块,其特征在于,该光学封装胶体为空心的薄壳,在硅基板上的封装范围包含发光二极管晶粒、温度感测单元及光感测单元三者的范围。
13.如权利要求12所述的发光二极管模块,其特征在于,该光学封装胶体内对该发光二极管晶粒封装一实心的光学封装胶体,且光学封装胶体在薄壳上具有若干供光学封装胶体内的空气向外对流的透气孔。
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