CN103091976A - Method for improving homogeneity of critical dimension of photomask - Google Patents
Method for improving homogeneity of critical dimension of photomask Download PDFInfo
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- CN103091976A CN103091976A CN2013100625639A CN201310062563A CN103091976A CN 103091976 A CN103091976 A CN 103091976A CN 2013100625639 A CN2013100625639 A CN 2013100625639A CN 201310062563 A CN201310062563 A CN 201310062563A CN 103091976 A CN103091976 A CN 103091976A
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Abstract
The invention provides a method for improving homogeneity of critical dimension of a photomask. The method comprises the steps of: firstly, carrying out initial mask layout design; secondly, dividing the designed initial mask layout to blocks; thirdly, calculating the density of an exposure figure of each block of the initial mask layout; fourthly, determining the adjustment range of the critical dimension of each block according to the density distribution of the exposure figure in the peripheral area of each block; fifthly, adjusting the critical dimension of each block according to the determined adjustment range of the critical dimension of each block, thereby obtaining an updated mask layout; and sixthly, manufacturing a mask according to the updated mask layout.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method that improves optical mask plate critical size homogeneity.
Background technology
In integrated circuit fabrication process, usually by laser beam or electron beam, the circuit that designs is transferred on mask plate, then by the mode of exposure, the figure on mask is transferred on silicon chip.
But, due to the easy interreflection (spraying effect) in photomask base plate surface and exposure cavity of electron beam, cause the photoresistance in exposure area graphics area proportion larger zone than the more electronics of other regional photoresistances acceptance.Thus, under same exposure energy, after having developed, the critical size of the regional photoresistance that the mask plate exposure area graphics area proportion of positivity photoresistance is larger is little than the critical size of the regional photoresistance in other zones; The mask plate of negativity photoresistance is opposite, and the critical size of the regional photoresistance that namely the mask plate exposure area graphics area proportion of negativity photoresistance is larger is large than the critical size of the regional photoresistance in other zones.
Therefore, be desirable to provide the bad problem of critical size homogeneity that a kind of spraying effect that can solve when being exposed by mask plate causes, finally promote the technical scheme of the critical size homogeneity of mask plate integral body.
Summary of the invention
Technical matters to be solved by this invention is for there being defects in prior art, the bad problem of critical size homogeneity that provides a kind of spraying effect that can solve when being exposed by mask plate to cause finally promotes the method for the critical size homogeneity of mask plate integral body.
In order to realize above-mentioned technical purpose, the invention provides a kind of method that improves optical mask plate critical size homogeneity, it comprises:
First step is used for carrying out initial mask plate layout design;
Second step is used for that the initial mask plate domain that designs is carried out block and divides;
Third step is for the exposure figure density of calculating each block of initial mask plate domain;
The 4th step is used for determining according to the exposure figure Density Distribution in each block neighboring area the adjusting range of each block critical size;
The 5th step is for adjust the critical size of each block according to the adjusting range of determined each block critical size, with the mask plate layout that obtains upgrading;
The 6th step is used for carrying out the mask plate manufacturing according to the mask plate layout that upgrades.
Preferably, described each block neighboring area is take this block center as the center of circle, take the zone in the scope that circle was covered of radius to set a distance.
Preferably, described scope to set a distance is 0.1mm to 152.4mm.
Preferably, in described the 4th step, the scope of the adjusting range of described each block critical size be 1nm to 5 preferably, the exposure figure Density Distribution in each block neighboring area comprises: the density of the exposure figure of the exposure figure in this block neighboring area to the distance of this block and this block neighboring area; In described the 4th step, the adjusting range of described each block critical size can be by the exposure figure in this block neighboring area the density of the exposure figure to the distance of this block and this block neighboring area determine.
Preferably, in described the 4th step, the exposure figure in the block neighboring area is less to the distance of this block, and the adjusting range of this block critical size is larger; The density of the exposure figure in the block neighboring area is larger, and the adjusting range of this block critical size is larger.
Preferably, in the 5th step, for the mask plate that uses positivity mask plate photoresistance, according to the adjusting range of determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger is turned down, and the transparent figure critical size that the exposure area pattern density is less tunes up; For the mask plate that uses negativity mask plate photoresistance, according to the adjusting range of determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger tunes up, and the transparent figure critical size that the exposure area pattern density is less is turned down.
Preferably, in second step, carry out block according to fixed measure and divide.
In the present invention, provide a kind of method that improves optical mask plate critical size homogeneity; Wherein, after the mask plate design, for the pattern density situation around each data area, adjust the size of this regional critical size, to make up the difference of each the regional critical size that is brought by spraying effect, finally improve the critical size homogeneity of mask plate integral body.
Description of drawings
By reference to the accompanying drawings, and by with reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the process flow diagram of the method that improves according to the preferred embodiment of the invention optical mask plate critical size homogeneity.
Fig. 2 schematically shows the critical size distribution plan of the mask plate of the method production that improves according to the preferred embodiment of the invention optical mask plate critical size homogeneity.
Fig. 3 schematically shows the critical size distribution plan according to the mask plate of the production of prior art.
Need to prove, accompanying drawing is used for explanation the present invention, and unrestricted the present invention.Note, the accompanying drawing of expression structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 1 schematically shows the process flow diagram of the method that improves according to the preferred embodiment of the invention optical mask plate critical size homogeneity.
More particularly, as shown in Figure 1, the method that improves according to the preferred embodiment of the invention optical mask plate critical size homogeneity comprises:
First step S1 is used for carrying out initial mask plate layout design; Wherein, can carry out initial mask plate layout design by any mode well known in the prior art.
Second step S2 is used for that the initial mask plate domain that designs is carried out block and divides; Wherein, preferably, can carry out block according to fixed measure and divide, for example, can be with the cell of 20umx20um size as a block.
Third step S3 is for the exposure figure density of calculating each block of initial mask plate domain.Wherein, exposure figure density refers to the exposure area graphics area divided by the business of the block total area.
The 4th step S4 is used for determining according to the exposure figure Density Distribution in each block neighboring area the adjusting range of each block critical size;
Wherein, preferably, described each block neighboring area is take this block center as the center of circle, take the zone in the scope that circle was covered of radius to set a distance.
Preferably, described scope to set a distance is 0.1mm to 152.4mm.
Preferably, the scope of the adjusting range of described each block critical size is 1nm to 500nm.
Preferably, in specific embodiment, the exposure figure Density Distribution in each block neighboring area comprises: the density of the exposure figure of the exposure figure in this block neighboring area to the distance of this block and this block neighboring area; Thus the adjusting range of described each block critical size can be by the exposure figure in this block neighboring area the density of the exposure figure to the distance of this block and this block neighboring area determine.
Wherein, the exposure figure in this block neighboring area is less to the distance of this block, and the adjusting range of this block critical size is larger; In addition, the density of the exposure figure in this block neighboring area is larger, and the adjusting range of this block critical size is larger.
The 5th step S5 is for adjust the critical size of each block according to the adjusting range of determined each block critical size, with the mask plate layout that obtains upgrading.
Specifically, in the 5th step S5, for the mask plate that uses positivity mask plate photoresistance, adjusting range according to determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger is turned down, and the transparent figure critical size that the exposure area pattern density is less tunes up; For the mask plate that uses negativity mask plate photoresistance, according to the adjusting range of determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger tunes up, and the transparent figure critical size that the exposure area pattern density is less is turned down.
The 6th step S6 is used for carrying out the mask plate manufacturing according to the mask plate layout that upgrades.
Fig. 2 and Fig. 3 show an example of the contrast of the present invention and prior art.
Fig. 2 schematically shows the critical size distribution plan P1 of the mask plate of the method production that improves according to the preferred embodiment of the invention optical mask plate critical size homogeneity, and wherein the fluctuation of the critical size of full wafer mask plate is 10nm.Fig. 3 schematically shows the critical size distribution plan P2 according to the mask plate of the production of prior art, and wherein the fluctuation of the critical size of full wafer mask plate is 37nm.
Can find out, after using the present invention, the fluctuation of the critical size of full wafer mask plate drops to 10nm from 37nm.
Thus, in the above embodiment of the present invention, provide a kind of method that improves optical mask plate critical size homogeneity; Wherein, after the mask plate design, for the exposure area pattern density situation around each data area, adjust the size of this regional critical size, to make up the difference of each the regional critical size that is brought by spraying effect, finally improve the critical size homogeneity of mask plate integral body.
In addition, need to prove, unless stated otherwise or point out, otherwise the term in instructions " first ", " second ", " the 3rd " etc. describe each assembly of only being used for distinguishing instructions, element, step etc., rather than are used for logical relation between each assembly of expression, element, step or ordinal relation etc.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. method that improves optical mask plate critical size homogeneity is characterized in that comprising:
First step is used for carrying out initial mask plate layout design;
Second step is used for that the initial mask plate domain that designs is carried out block and divides;
Third step is for the exposure figure density of calculating each block of initial mask plate domain;
The 4th step is used for determining according to the exposure figure Density Distribution in each block neighboring area the adjusting range of each block critical size;
The 5th step is for adjust the critical size of each block according to the adjusting range of determined each block critical size, with the mask plate layout that obtains upgrading;
The 6th step is used for carrying out the mask plate manufacturing according to the mask plate layout that upgrades.
2. the method for raising optical mask plate critical size homogeneity according to claim 1, is characterized in that, described each block neighboring area is take this block center as the center of circle, take the zone in the scope that circle was covered of radius to set a distance.
3. the method for raising optical mask plate critical size homogeneity according to claim 2, is characterized in that, described scope to set a distance is 0.1mm to 152.4mm.
4. the method for raising optical mask plate critical size homogeneity according to claim 1 and 2, is characterized in that, in described the 4th step, the scope of the adjusting range of described each block critical size is 1nm to 500nm.
5. the method for raising optical mask plate critical size homogeneity according to claim 1 and 2, it is characterized in that, the exposure figure Density Distribution in each block neighboring area comprises: the density of the exposure figure of the exposure figure in this block neighboring area to the distance of this block and this block neighboring area; In described the 4th step, the adjusting range of described each block critical size can be by the exposure figure in this block neighboring area the density of the exposure figure to the distance of this block and this block neighboring area determine.
6. the method for raising optical mask plate critical size homogeneity according to claim 1 and 2, it is characterized in that, in described the 4th step, the exposure figure in the block neighboring area is less to the distance of this block, and the adjusting range of this block critical size is larger; The density of the exposure figure in the block neighboring area is larger, and the adjusting range of this block critical size is larger.
7. the method for raising optical mask plate critical size homogeneity according to claim 1 and 2, it is characterized in that, in the 5th step, for the mask plate that uses positivity mask plate photoresistance, adjusting range according to determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger is turned down, and the transparent figure critical size that the exposure area pattern density is less tunes up; For the mask plate that uses negativity mask plate photoresistance, according to the adjusting range of determined each block critical size, the transparent figure critical size that the exposure area pattern density is larger tunes up, and the transparent figure critical size that the exposure area pattern density is less is turned down.
8. the method for raising optical mask plate critical size homogeneity according to claim 1 and 2, is characterized in that, in second step, carries out block according to fixed measure and divide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100625639A CN103091976A (en) | 2013-02-27 | 2013-02-27 | Method for improving homogeneity of critical dimension of photomask |
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| CN2013100625639A CN103091976A (en) | 2013-02-27 | 2013-02-27 | Method for improving homogeneity of critical dimension of photomask |
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| CN103091976A true CN103091976A (en) | 2013-05-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075856A (en) * | 2020-01-06 | 2021-07-06 | 中芯国际集成电路制造(上海)有限公司 | Mask pattern, mask and method for forming semiconductor structure |
| WO2023137952A1 (en) * | 2022-01-19 | 2023-07-27 | 深圳晶源信息技术有限公司 | Layout splitting method and apparatus suitable for double lithography technology, and electronic device |
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| US20030027064A1 (en) * | 2001-07-21 | 2003-02-06 | Samsung Electronics Co., Ltd. | Exposure method for correcting dimension variation in electron beam lithography, and recording medium for recording the same |
| CN1450407A (en) * | 2002-04-09 | 2003-10-22 | 联华电子股份有限公司 | Method for correcting mask distribution pattern |
| CN101546135A (en) * | 2008-03-25 | 2009-09-30 | 纽富来科技股份有限公司 | Charged-particle beam writing method and charged-particle beam writing apparatus |
| CN101750902A (en) * | 2008-12-02 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Atomization effect compensation method of exposure conditions of diverse electron beams and exposure method thereof |
-
2013
- 2013-02-27 CN CN2013100625639A patent/CN103091976A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030027064A1 (en) * | 2001-07-21 | 2003-02-06 | Samsung Electronics Co., Ltd. | Exposure method for correcting dimension variation in electron beam lithography, and recording medium for recording the same |
| CN1450407A (en) * | 2002-04-09 | 2003-10-22 | 联华电子股份有限公司 | Method for correcting mask distribution pattern |
| CN101546135A (en) * | 2008-03-25 | 2009-09-30 | 纽富来科技股份有限公司 | Charged-particle beam writing method and charged-particle beam writing apparatus |
| CN101750902A (en) * | 2008-12-02 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Atomization effect compensation method of exposure conditions of diverse electron beams and exposure method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075856A (en) * | 2020-01-06 | 2021-07-06 | 中芯国际集成电路制造(上海)有限公司 | Mask pattern, mask and method for forming semiconductor structure |
| WO2023137952A1 (en) * | 2022-01-19 | 2023-07-27 | 深圳晶源信息技术有限公司 | Layout splitting method and apparatus suitable for double lithography technology, and electronic device |
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Application publication date: 20130508 |