CN103078019A - Epitaxial structure of light emitting diode - Google Patents
Epitaxial structure of light emitting diode Download PDFInfo
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- CN103078019A CN103078019A CN2012100581903A CN201210058190A CN103078019A CN 103078019 A CN103078019 A CN 103078019A CN 2012100581903 A CN2012100581903 A CN 2012100581903A CN 201210058190 A CN201210058190 A CN 201210058190A CN 103078019 A CN103078019 A CN 103078019A
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- quantum well
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Abstract
The invention relates to an epitaxial structure of a light emitting diode. The epitaxial structure comprises a substrate layer, a transition layer, a u-shaped gallium nitride layer, an n-shaped gallium nitride layer, a multiple quantum well layer, a spacer layer embedded in the multiple quantum well layer, or an n-shaped gallium nitride layer extending into the multiple quantum well layer and a p-shaped gallium nitride layer, wherein the multiple quantum well layer comprises quantum barriers and quantum wells which are arranged in an alternating manner; and parts of or all the quantum barriers and quantum wells in the multiple quantum well layer are contacted with the spacer layer embedded in the multiple quantum well layer or the n-shaped gallium nitride layer extending into the multiple quantum well layer. With the adoption of the epitaxial structure of the light emitting diode provided by the invention, the stress of the quantum wells caused by lattice mismatch or thermal mismatch can be effectively reduced, the crystalline quality of an epitaxial layer is improved, and quantum dots can be formed, so that the light emitting efficiency of the light emitting diode is improved.
Description
Technical field
The present invention relates to the photoelectron technology field, be specifically related to a kind of light emitting diode epitaxial structure.
Background technology
The conventional epitaxial structure of light-emitting diode as shown in Figure 1, comprise that the substrate layer 1, transition zone 2, u-shaped gallium nitride layer 3, N-shaped gallium nitride layer 4, the multiple quantum well layer 5(that are provided with successively comprise quantum base 51 and quantum well 52) and p-type gallium nitride layer 6, because lattice mismatch and the thermal mismatching of substrate layer 1 and epitaxial loayer cause diode inside to have a large amount of non-radiative defectives, dislocation density reaches 10 to this kind structure in growth course
9Cm
-2～10
11Cm
-2, and consequent spontaneous polarization and piezoelectric effect cause powerful internal electric field, have reduced luminous efficiency, and along with the increase of Injection Current and the rising of device serviceability temperature, wavelength also can drift about, and luminous efficiency will descend.
Hence one can see that, the growth of epitaxial structure is the key technology of light-emitting diode chip for backlight unit, and quantum well layer is the most important part of epitaxial loayer, it determines emission wavelength and the luminous efficiency of whole epitaxial loayer, therefore, the defect concentration of reduction quantum well layer is one of major measure that improves light-emitting diode luminance; Simultaneously, because quantum dot can be effectively with electronics and hole-recombination, and send the light of respective wavelength, therefore, form quantum dot at quantum well layer, also help to promote the luminous efficiency of light-emitting diode chip for backlight unit.
Summary of the invention
Technical problem to be solved by this invention provides a kind of light emitting diode epitaxial structure, to improve luminous efficiency and the brightness of light-emitting diode.
The present invention is in order to solve the problems of the technologies described above, a kind of light emitting diode epitaxial structure is disclosed, comprise the substrate layer, transition zone, u-shaped gallium nitride layer, N-shaped gallium nitride layer, multiple quantum well layer and the p-type gallium nitride layer that are provided with successively, described multiple quantum well layer is built and the quantum well alternative arrangement by quantum.
Further, embed separate layer in described multiple quantum well layer, quantum base part or all of in the described multiple quantum well layer contacts with separate layer with quantum well.
Further, described N-shaped gallium nitride layer extends in the multiple quantum well layer, and quantum base part or all of in the described multiple quantum well layer contacts with the N-shaped gallium nitride layer that extends to wherein with quantum well.
Further, described multiple quantum well layer comprises i layer alternately quantum well and quantum base, wherein 1≤i≤100 of contact.
Further, described quantum well consists of Al
yIn
xGa
1-x-yN(0＜x≤1,0≤y＜1,0≤x+y＜1), described quantum is built consists of Al
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1).
Further, described transition zone consists of Al
Y1In
X1Ga
1-x1-y1N(0≤x1≤1,0≤y1≤1,0≤x1+y1＜1); Described separate layer consist of Al
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1); Described u-shaped gallium nitride layer is doped with Al not
Y2In
X2Ga
1-x2-y2N(0≤x2＜1,0≤y2＜1,0≤x2+y2＜1) semiconductor layer; Described N-shaped gallium nitride layer is the N-shaped doped with Al
Y3In
X3Ga
1-x3-y3N(0≤x3＜1,0≤y3＜1,0≤x3+y3＜1) semiconductor layer, doped chemical are Si, and doping content is 1 * 10
17/ cm
3～5 * 10
22/ cm
3Described p-type gallium nitride layer is the p-type doped with Al
Y4In
X4Ga
1-x4-y4N(0≤x4≤1,0≤y4≤1,0≤x4+y4＜1) semiconductor layer, doped chemical are Be, Mg, and doping content is 5 * 10
17/ cm
3～9 * 10
23/ cm
3
Adopt the beneficial effect of technique scheme to be: the light emitting diode epitaxial structure that the present invention proposes, can effectively reduce quantum well because the stress that lattice mismatch and thermal mismatching cause, improve the crystal mass of epitaxial loayer, can form quantum dot, to improve luminous efficiency and the brightness of light-emitting diode.
Description of drawings
Fig. 1 is the conventional epitaxy junction composition of light-emitting diode;
Fig. 2 is embodiment 1 structural representation of the present invention;
Fig. 3 is embodiment 2 structural representations of the present invention;
Fig. 4 is embodiment 3 structural representations of the present invention;
Fig. 5 a is that embodiment 1 of the present invention and embodiment 2 embed the separate layer in the multiple quantum well layer or is that the N-shaped gallium nitride layer that extends to multiple quantum well layer among the embodiment 3 of the present invention is etched to leg-of-mutton structural representation;
Fig. 5 b is that embodiment 1 of the present invention and embodiment 2 embed the separate layer in the multiple quantum well layer or is that the N-shaped gallium nitride layer that extends to multiple quantum well layer among the embodiment 3 of the present invention is etched to parabola shaped structural representation;
Fig. 5 c is that embodiment 1 of the present invention and embodiment 2 embed the separate layer in the multiple quantum well layer or is that the N-shaped gallium nitride layer that extends to multiple quantum well layer among the embodiment 3 of the present invention is etched to trapezoidal structural representation;
Fig. 5 d is that embodiment 1 of the present invention and embodiment 2 embed the separate layer in the multiple quantum well layer or is that the N-shaped gallium nitride layer that extends to multiple quantum well layer among the embodiment 3 of the present invention is etched to square structural representation;
Fig. 6 a is the separate layer in embodiment 1 of the present invention and the embodiment 2 embedding multiple quantum well layers or is the surface holes graphical distribution Fig. 1 that extends to the N-shaped gallium nitride layer of multiple quantum well layer among the embodiment 3 of the present invention;
Fig. 6 b is the separate layer in embodiment 1 of the present invention and the embodiment 2 embedding multiple quantum well layers or is the surface holes graphical distribution Fig. 2 that extends to the N-shaped gallium nitride layer of multiple quantum well layer among the embodiment 3 of the present invention;
Fig. 6 c is the separate layer in embodiment 1 of the present invention and the embodiment 2 embedding multiple quantum well layers or is the surface holes graphical distribution Fig. 3 that extends to the N-shaped gallium nitride layer of multiple quantum well layer among the embodiment 3 of the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
Fig. 1 is the conventional epitaxy junction composition of light-emitting diode, as shown in Figure 1, the conventional epitaxial structure of diode comprises that the substrate layer 1, transition zone 2, u-shaped gallium nitride layer 3, N-shaped gallium nitride layer 4, the multiple quantum well layer 5(that are provided with successively comprise quantum base 51 and the quantum well 52 of alternately contact) and p-type gallium nitride layer 6, because lattice mismatch and the thermal mismatching of substrate layer 1 and epitaxial loayer cause diode inside to have a large amount of non-radiative defectives, dislocation density reaches 10 to this kind structure in growth course
9Cm
-2～10
11Cm
-2
Fig. 2 is embodiment 1 structural representation of the present invention, as shown in Figure 2, the diode epitaxial structure of the embodiment of the invention comprise the substrate layer 1, transition zone 2, u-shaped gallium nitride layer 3, N-shaped gallium nitride layer 4, the multiple quantum well layer 5(that are provided with successively comprise the quantum of alternately contact build 51 and quantum well 52), embed separate layer 7 and p-type gallium nitride layer 6 in the multiple quantum well layer 5, part or all of quantum is built 51 and is contacted with the separate layer 7 of quantum well 52 with embedding in the described multiple quantum well layer.A specific implementation process of the present embodiment 1 is:
First at MOCVD(Metal-organic Chemical Vapor Deposition metallo-organic compound chemical gaseous phase deposition) substrate is toasted under 1200 ℃ environment in the reacting furnace, process the substrate surface foreign matter, then at 550 ℃ environment deposit 25nm transition zone, temperature is elevated to 1100 ℃ again, carry out successively 2.5 μ m u-shaped gallium nitride layers, 2.5 μ m N-shaped gallium nitride layer, 0.5 the preparation of μ m separate layer, after temperature is reduced to room temperature, recycling photoetching or nanometer embossing are etched into as shown in Figure 5 micron or nano junction composition with separate layer, its surface texture can be as shown in Figure 6 regular distribution or the surface holes figure of irregular distribution, described surface holes figure can be rounded, triangle or other shapes etc.Put into again MOCVD after sample cleaned and carry out diauxic growth, make it under 750 ℃ environment grown quantum and build and quantum well, so that separate layer is mounted in j the quantum well layer (wherein: 1≤j≤i; I is the number of plies that quantum well or quantum are built in the multiple quantum well layer, 1≤i≤100), and then temperature risen to 900 ℃, the Mg doped p type gallium nitride layer of deposition 250nm behind the temperature cool to room temperature, is finished growth course.
Multiple quantum well layer described in the present embodiment 5 comprises i layer alternately quantum base 51 and quantum well 52, wherein 1≤i≤100 of contact; The structure of described multiple quantum well layer 5 is that quantum well 52/ quantum builds 51/ ... / quantum well 52/ quantum builds 51, or quantum is built 51/ quantum well 52 ... / quantum is built 51/ quantum well 52, or quantum is built 51/ quantum well, 52/ quantum base 51/ ... / quantum well 52/ quantum builds 51; Wherein, described quantum well 52 consists of Al
yIn
xGa
1-x-yN(0＜x≤1,0≤y＜1,0≤x+y＜1), described quantum is built 51 the Al that consists of
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1).In this execution mode, described transition zone 2 consist of Al
Y1In
X1Ga
1-x1-y1N(0≤x1≤1,0≤y1≤1,0≤x1+y1＜1); Described u-shaped gallium nitride layer 3 is doped with Al not
Y2In
X2Ga
1-x2-y2N(0≤x2＜1,0≤y2＜1,0≤x2+y2＜1) semiconductor layer, described N-shaped gallium nitride layer 4 is the N-shaped doped with Al
Y3In
X3Ga
1-x3-y3N(0≤x3＜1,0≤y3＜1,0≤x3+y3＜1) semiconductor layer, doped chemical are Si, and doping content is 1 * 10
17/ cm
3～5 * 10
22/ cm
3, described p-type gallium nitride layer 6 is the p-type doped with Al
Y4In
X4Ga
1-x4-y4N(0≤x4≤1,0≤y4≤1,0≤x4+y4＜1) semiconductor layer, doped chemical are Be, Mg, and doping content is 5 * 10
17/ cm
3～9 * 10
23/ cm
3, described separate layer 7 consist of Al
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1).This structure is micro-structural independently because of quantum well, can alleviate that quantum is built and quantum well between stress, reduce defect concentration, improve the reliability of device; And be the lattice-like quantum well structure, be quantum dot light emitting, can make the luminous efficiency of epitaxial loayer improve more than 30%.
Fig. 3 is embodiment 2 structural representations of the present invention, and in embodiments of the present invention, epitaxial structure and the implementation process of described diode are substantially the same manner as Example 1, and difference is, the separate layer that is mounted in the quantum well layer is connected with the p-type gallium nitride layer.
Fig. 4 is embodiment 3 structural representations of the present invention, as shown in Figure 4, the diode epitaxial structure of the embodiment of the invention comprises that the substrate layer 1, transition zone 2, u-shaped gallium nitride layer 3, N-shaped gallium nitride layer 4, the multiple quantum well layer 5(that are provided with successively comprise quantum base 51 and the quantum well 52 of alternately contact) and p-type gallium nitride layer 6, wherein, described N-shaped gallium nitride layer 4 extends in the multiple quantum well layer 5, and part or all of quantum is built 51 and contacted with the N-shaped gallium nitride layer 4 that extends to wherein with quantum well 52 in the described multiple quantum well layer.A specific implementation process of the present embodiment is:
In the MOCVD reacting furnace, substrate is toasted under 1200 ℃ environment first, process the substrate surface foreign matter, then at 550 ℃ environment deposit 25nm transition zone, temperature is elevated to 1100 ℃ again, carry out successively 2.5 μ m u-shaped gallium nitride layers, 2.5 the preparation of μ m N-shaped gallium nitride layer, after temperature is reduced to room temperature, recycling photoetching or nanometer embossing are etched into as shown in Figure 5 micron or nano junction composition with the N-shaped gallium nitride layer, its surface texture can be as shown in Figure 6 regular distribution or the surface holes figure of irregular distribution, described surface holes figure can be rounded, triangle or other shapes etc.Carry out diauxic growth with putting into MOCVD after the sample cleaning again, make it grown quantum base and quantum well under 750 ℃ environment, and then temperature is risen to 900 ℃, the Mg doped p type gallium nitride layer of deposition 250nm behind the temperature cool to room temperature, is finished growth course.
Multiple quantum well layer described in the present embodiment 5 comprises i layer alternately quantum base 51 and quantum well 52, wherein 1≤i≤100 of contact; The structure of described multiple quantum well layer 5 is that quantum well 52/ quantum builds 51/ ... / quantum well 52/ quantum builds 51, or quantum is built 51/ quantum well 52 ... / quantum is built 51/ quantum well 52, or quantum is built 51/ quantum well, 52/ quantum base 51/ ... / quantum well 52/ quantum builds 51; Wherein, described quantum well 52 consists of Al
yIn
xGa
1-x-yN(0＜x≤1,0≤y＜1,0≤x+y＜1), described quantum is built 51 the Al that consists of
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1).In this execution mode, described transition zone 2 consist of Al
Y1In
X1Ga
1-x1-y1N(0≤x1≤1,0≤y1≤1,0≤x1+y1＜1); Described u-shaped gallium nitride layer 3 is doped with Al not
Y2In
X2Ga
1-x2-y2N(0≤x2＜1,0≤y2＜1,0≤x2+y2＜1) semiconductor layer, described N-shaped gallium nitride layer 4 is the N-shaped doped with Al
Y3In
X3Ga
1-x3-y3N(0≤x3＜1,0≤y3＜1,0≤x3+y3＜1) semiconductor layer, doped chemical are Si, and doping content is 1 * 10
17/ cm
3～5 * 10
22/ cm
3, described p-type gallium nitride layer 6 is the p-type doped with Al
Y4In
X4Ga
1-x4-y4N(0≤x4≤1,0≤y4≤1,0≤x4+y4＜1) semiconductor layer, doped chemical are Be, Mg, and doping content is 5 * 10
17/ cm
3～9 * 10
23/ cm
3This structure is micro-structural independently because of quantum well, can alleviate that quantum is built and quantum well between stress, reduce defect concentration, improve the reliability of device; And be the lattice-like quantum well structure, be quantum dot light emitting, simultaneously, shorten the coverage of N-shaped gallium nitride layer and P type gallium nitride layer, improve the injection efficiency in effective electron and hole, can be with LED lower voltage 0.1-0.5V, luminous efficiency will improve 25%.
Shown in Fig. 5 a, 5b, 5c and 5d, for embodiment 1 of the present invention and embodiment 2 embeds the separate layer in the multiple quantum well layers or extend to the structure and morphology figure that the N-shaped gallium nitride layer in the multiple quantum well layer is etched among the embodiment 3 of the present invention, Fig. 5 a, 5b, 5c and 5d are respectively the triangle, parabola shaped, trapezoidal and square of etching.
Shown in Fig. 6 a, 6b and 6c, for the separate layer in embodiment 1 of the present invention and the embodiment 2 embedding multiple quantum well layers or for extending to the surface holes distribution map of the N-shaped gallium nitride layer in the multiple quantum well layer among the embodiment 3 of the present invention, its shape is not limited to circle or ellipse, and can be shown in Fig. 6 a, 6b regular distribution, also can irregular distribution shown in Fig. 6 c.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. light emitting diode epitaxial structure, comprise the substrate layer, transition zone, u-shaped gallium nitride layer, N-shaped gallium nitride layer, multiple quantum well layer and the p-type gallium nitride layer that are provided with successively, it is characterized in that, described multiple quantum well layer comprises quantum base and the quantum well of alternative arrangement.
2. light emitting diode epitaxial structure according to claim 1 is characterized in that, embeds separate layer in described multiple quantum well layer, and quantum base part or all of in the described multiple quantum well layer contacts with separate layer with quantum well.
3. light emitting diode epitaxial structure according to claim 1 is characterized in that, described N-shaped gallium nitride layer extends in the multiple quantum well layer, and quantum base part or all of in the described multiple quantum well layer contacts with the N-shaped gallium nitride layer that extends to wherein with quantum well.
4. according to claim 1 to 3 each described light emitting diode epitaxial structures, it is characterized in that, described multiple quantum well layer comprises i layer alternately quantum well and quantum base, wherein 1≤i≤100 of contact.
5. light emitting diode epitaxial structure according to claim 4 is characterized in that, described quantum well consist of Al
yIn
xGa
1-x-yN(0＜x≤1,0≤y＜1,0≤x+y＜1), described quantum is built consists of Al
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1).
6. according to claim 1 to 3 described light emitting diode epitaxial structures, it is characterized in that, described transition zone consist of Al
Y1In
X1Ga
1-x1-y1N(0≤x1≤1,0≤y1≤1,0≤x1+y1＜1); Described separate layer consist of Al
aIn
bGa
1-a-bN(0≤a＜1,0≤b＜1,0≤a+b＜1); Described u-shaped gallium nitride layer is doped with Al not
Y2In
X2Ga
1-x2-y2N(0≤x2＜1,0≤y2＜1,0≤x2+y2＜1) semiconductor layer; Described N-shaped gallium nitride layer is the N-shaped doped with Al
Y3In
X3Ga
1-x3-y3N(0≤x3＜1,0≤y3＜1,0≤x3+y3＜1) semiconductor layer, doped chemical are Si, and doping content is 1 * 10
17/ cm
3～5 * 10
22/ cm
3Described p-type gallium nitride layer is the p-type doped with Al
Y4In
X4Ga
1-x4-y4N(0≤x4≤1,0≤y4≤1,0≤x4+y4＜1) semiconductor layer, doped chemical are Be, Mg, and doping content is 5 * 10
17/ cm
3～9 * 10
23/ cm
3
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Family
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| WO2017076117A1 (en) * | 2015-11-02 | 2017-05-11 | 厦门市三安光电科技有限公司 | Led epitaxial structure and manufacturing method |
| WO2017121529A1 (en) * | 2015-12-02 | 2017-07-20 | Osram Opto Semiconductors Gmbh | Electronic component and method for producing an electronic component |
| CN107731977A (en) * | 2017-08-23 | 2018-02-23 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108395892A (en) * | 2018-05-10 | 2018-08-14 | 河北工业大学 | A kind of single quanta point material and preparation method thereof having multiple luminescent |
| CN112687776A (en) * | 2020-12-18 | 2021-04-20 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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