CN103066003A - Mechanical-type chip clamping-pressing device for vacuum plasma technology - Google Patents
Mechanical-type chip clamping-pressing device for vacuum plasma technology Download PDFInfo
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- CN103066003A CN103066003A CN 201210523699 CN201210523699A CN103066003A CN 103066003 A CN103066003 A CN 103066003A CN 201210523699 CN201210523699 CN 201210523699 CN 201210523699 A CN201210523699 A CN 201210523699A CN 103066003 A CN103066003 A CN 103066003A
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Abstract
The invention discloses a mechanical-type chip clamping-pressing device for vacuum plasma technology. The mechanical-type chip clamping-pressing device for the vacuum plasma technology comprises a chip substrate, an electrode, ceramic pressure rings, pressure ring connecting rods, a connecting rod support, a permanent magnet group, a drive motor and a motor support, wherein the chip substrate is positioned on the electrode, the ceramic pressure rings are arranged above the chip substrate and are connected with the connecting rod support through the pressure ring connecting rods, the permanent magnet group comprises a first group of permanent magnets and a second group of permanent magnets, wherein the first group of permanent magnets and the second group of permanent magnets are arranged in a corresponding mode are in magnetic coupling with each other, the first group of permanent magnets is fixedly connected with the connecting rod support, and the second group of permanent magnets is fixed on the drive motor which is movably connected with the motor support. The mechanical-type chip clamping-pressing device for the vacuum plasma technology can overcome the technical defect that an mechanical-type chip clamping-pressing device in the prior art can not be compatible with chip substrates with different thicknesses and surface evenness, is reliable in using, can reduce and eliminate instantaneous impact force generated by the ceramic pressure rings to the chip substrate when the ceramic pressure rings are contacted with the surface of the chip substrate, reduces the probability that the surface of the chip substrate is damaged or cracked, and improves production efficiency.
Description
Technical field
The present invention relates to a kind of mechanical type chip card pressure device for the vacuum plasma body technology, belong to vacuum plasma technology field.
Background technology
In the manufacturing process of the microelectronic chip of semiconductor chip and other kind, plasma process technology, especially plasma etching technology and gas phase film growth techniques are widely used.Plasma etching has local optionally to remove material in substrate material surface exactly; The gas phase membrane growth, the material that has local optionally to grow and make new advances at substrate surface exactly.And realize this local selectivity, and then to utilize mulching to produce accurate figure at the mask plate of substrate surface and shift, make regional covered that substrate surface has, the zone that has is then exposed out.Usually involved backing material roughly has three classes: elemental semiconductor (such as silicon, germanium etc.), compound semiconductor (such as GaAs, carborundum etc.) and other material (such as quartz, sapphire, glass etc.).In most of the cases, backing material presents crystal habit, and is applied to chip manufacturing proces with the form of thin rounded flakes.
When wafer substrates was exposed in the plasma, because the effect of electric field and plasma medium, energy was passed to the surface of wafer substrates.Remove if this energy can not fall apart effectively, underlayer temperature will raise.Most of the time, if raising, underlayer temperature can not get effective control, will be to the manufacturing process harmful of chip.Such as, in many techniques, people use organic photoresistance glue material as mask plate, and when temperature surpassed 120-150 ℃, its surface can be charred phenomenon, has both reduced the selection defencive function of mask plate, again the processing step of follow-up removing photoresistance glue is caused difficulty.Manufacture process requirement wafer substrates such as, some chip keeps lower temperature again, otherwise the function of chip will suffer damage.On the other hand, in order to improve the production efficiency of chip manufacturing process, people often will by the energy density that increases plasma and the speed that Media density improves film growth or etching, consequently increase the trend that wafer substrates heats up in technical process.
Remove the heat that wafer substrates obtains from plasma, just need under vacuum environment, cool off wafer substrates.General technology way is: wafer substrates is positioned on the electrode, introduces gas in the space between substrate back and electrode surface as heat-conducting medium, wafer substrates is cooled off.Using maximum gas is inert gas helium (He), because it has preferably heat conductivility.In order to reach enough cooling effectivenesss, the helium pressure at the wafer substrates back side generally will maintain in the scope of a few holder to tens holders (Torr)., the operating pressure of plasma process cavity generally only has tens millitorrs (mTorr), therefore, need to carry out encapsulation process to the helium at the wafer substrates back side, otherwise helium will leak in the processing atmosphere.Usually use the mechanical type press fastening device, from the surrounding edge in wafer substrates front wafer is applied mechanical pressure, substrate is closely pressed solidly on electrode surface, thereby realize the sealing to helium.Another kind of way is to adopt the mode of electrostatic chuck, applies larger absorption affinity from the wafer substrates back side, thereby substrate is evenly closely inhaled admittedly at electrode surface, plays the effect of sealing helium.
The mechanical type press fastening device is simpler than electrostatic chuck, has the characteristics such as the scope of application is wide, Mechanical Reliability is better, manufacturing cost is lower.At present, in various types of vacuum plasma process equipments, there is equipment over half to adopt the mechanical type press fastening device to come fastening wafer substrates.Traditional mechanical type press fastening device is comprised of several parts, mainly comprises ceramic pressure ring, pressure ring connecting rod, support, and the drive motors that directly links together with support etc.Generally speaking, the part of pottery pressure ring and metal link rod will place in the vacuum technology chamber, and the remainder of pressure ring connecting rod, support and drive motors will place outside the processing chamber, are in the atmospheric pressure environment, therefore, in system, also need to realize vacuum-packed mechanism.The external diameter of pottery pressure ring is greater than the external diameter of electrode; The internal diameter of pottery pressure ring is less than the external diameter of wafer substrates so that with the condition of wafer substrates aligned position under, the complete edge of wafer substrate.
In use, drive motors is done moving up and down of vertical direction, and by the support that directly links to each other with this motor and the connecting rod that directly links to each other with support, drives ceramic pressure ring and move up and down.Wafer substrates is placed on the electrode top of plasma processing tool, but is in the below of ceramic pressure ring.The pottery pressure ring moves downward, until contact with the upper surface of wafer substrates, thereby arrive it to extreme lower position.On this position, drive motors stop motion and locking continue support, pressure ring connecting rod and ceramic pressure ring are applied downward pulling force.Rely on this pulling force, just wafer substrates closely can be pressed solidly on electrode surface, realize the purpose of sealing helium.The pottery pressure ring moves upward, and disengages with wafer substrates, until admissible extreme higher position.At this moment, wafer substrates also can move upward under the effect of driving mechanism, disengages with electrode surface, rises to certain specific position, and the wait manipulator moves it and unloads and transmit.The motion process of here describing, relate to several specific positions, comprise the extreme higher position of the extreme lower position of ceramic pressure ring, ceramic pressure ring and the extreme higher position of wafer substrates, these positions need to be realized by the parameter of control driving mechanism, such as limit switch or travel switch are set in device, or/and set the movement travel of drive motors under different step by calibration adjustments in advance, etc.
There are some problems in actual applications in traditional mechanical type chip card pressure device, and there is drawback in the control mode when especially ceramic pressure ring being moved to extreme lower position.At first, the thickness of different chips substrate can be different, and surface smoothness also can be different.To the wafer substrates with a collection of same diameter specifications, its thickness and surface smoothness have certain margin of tolerance; In extreme situation, the difference in thickness of ceramic pressure ring energy " perception " can reach the 0.1-0.2 millimeter.Like this, in the situation of using a plurality of wafer substrates of same PROCESS FOR TREATMENT, when ceramic pressure ring moved to the extreme lower position that sets in advance, slightly thin wafer substrates might not can be compressed effectively, and slightly thick wafer substrates then might be pressed to get tension and breakage.Secondly, owing to adopt hardwired mode between ceramic pressure ring and the drive motors, in the moment of lower surface and the wafer substrates Surface Contact of ceramic pressure ring, immediately stop motion of drive motors is so that the also immediately stop motion of ceramic pressure ring.If the time that drive motors does not immediately stop or stopping a little later, such as only having 0.1-0.2 second, will produce very large instant impact to wafer substrates.Wafer substrate material often has larger fragility, and this instant impact probably causes the surface damage of wafer substrates or breaks.
In reality; can not thoroughly eliminate the difference of wafer substrates on thickness and surface smoothness; also can not interrupt continually rhythm of production, the kinematic system of mechanical type chuck assembly is carried out repeatedly calibration adjustments, all just right opportunity to guarantee drive motors shutdown each time.Therefore, be necessary traditional mechanical type chip card pressure device is improved.
Summary of the invention
Purpose: in order to overcome the deficiencies in the prior art, the invention provides a kind of mechanical type chip card pressure device for the vacuum plasma body technology, utilize the magnetic couple of permanent magnet to connect ceramic pressure ring and drive motors, improve ceramic pressure ring when the contact wafer substrate with contact after to the force mechanism of wafer substrates, to strengthen the adaptability to the wafer substrates of different-thickness and surface smoothness, reduce the breakage of wafer substrates.
Technical scheme: for solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of mechanical type chip card pressure device for the vacuum plasma body technology, comprise wafer substrates 03 and electrode 02, described wafer substrates 03 is positioned on the electrode 02, it is characterized in that: also comprise ceramic pressure ring 04, pressure ring connecting rod 05, connecting rod rack 06, set of permanent magnets to 07, drive motors 10, electric machine support 11; Described ceramic pressure ring 04 is arranged on wafer substrates 03 top, is connected with connecting rod rack 06 by pressure ring connecting rod 05; Described set of permanent magnets comprises two corresponding first group of permanent magnet and second group of permanent magnets that mutual magnetic couple is set to 07; Described first group of permanent magnet is fixedly connected with connecting rod rack 06, and described second group of permanent magnet is fixed on the drive motors 10, and described drive motors 10 is flexibly connected and is arranged on the electric machine support 11.
Also comprise vacuum cavity 01, described electrode 02 and vacuum cavity 01 form the vacuum chamber of a closure, and described wafer substrates 03 and ceramic pressure ring 04 place in the described vacuum chamber; Described pressure ring connecting rod 05 upper end is arranged in the vacuum chamber and links to each other with ceramic pressure ring 04, passes the chamber wall of vacuum cavity 01, and the other end is arranged on outside the vacuum chamber and links to each other with connecting rod rack 06.
Also comprise soft vacuum corrugated pipe 12, be equipped with the soft vacuum corrugated pipe 12 of vacuum seal effect outside the pressure ring connecting rod 05 between described vacuum cavity 01 outer surface and connecting rod rack 06.
Also comprise permanent magnet support 08 and motion guide rod 09, described first group of permanent magnet is fixedly connected with connecting rod rack 06 by permanent magnet support 08, and described permanent magnet support 08 is flexibly connected and is arranged on the motion guide rod 09.
Also comprise wafer thimble 13 and thimble support 15, described wafer thimble 13 passes electrode 02, and the top contacts with the lower surface of wafer substrates 03, and the bottom is against on the thimble support 15; And/or, also comprise drive leader 16, be fixedly installed on the described connecting rod rack 06 and be useful on the drive leader 16 that driving wafer thimble 13 moves up and down, end structure matches with thimble support 15 bottoms on the described drive leader 16.
Also comprise soft bellows 14, be equipped with the soft bellows 14 of vacuum seal effect outside the wafer thimble 13 between described electrode 02 and thimble support 15.
Described first group of permanent magnet and second group of permanent magnet are one or more permanent magnet, and the at grade opposite position that be arranged in parallel; And/or the vertical range between described first group of permanent magnet and the second group of permanent magnet parallel end faces is the 2-20 millimeter.
Described first group of permanent magnet and second group of permanent magnet are that the remanent magnetism degree is at the permanent magnet of 0.5-1.5 tesla; And/or described first group of permanent magnet and second group of permanent magnet are rare-earth permanent magnet; And/or described first group of permanent magnet and second group of permanent magnet are neodymium iron permanent magnet or samarium cobalt permanent magnet body.
Described first group of permanent magnet and second group of permanent magnet are provided with for the intensive aspect of realizing magnetic couple, and/or the material of described intensive aspect does not produce shielding, decays or disperses the magnetic force of permanent magnet, can play shielding action to high frequency electromagnetic radiation simultaneously; And/or the material of described intensive aspect is metallic aluminium, aluminium alloy, pottery or rigid plastics.
The little 2-10 millimeter of vertical range between first group of permanent magnet of the Thickness Ratio of described intensive aspect and the second group of permanent magnet parallel end faces.
Beneficial effect: a kind of mechanical type chip card pressure device for the vacuum plasma body technology provided by the invention, can overcome traditional mechanical type chip card pressure device can not compatible different-thickness and the technological deficiency of the wafer substrates of surface smoothness, has increased the dependability of dress chip card pressure device; Can also effectively reduce even eliminate the instant impact that when touching the wafer substrates surface, wafer substrates is produced at ceramic pressure ring, thereby reduce the surface damage of wafer substrates or the probability of wafer breakage, enhance productivity.By utilizing into the right strong magnetic couple of set of permanent magnets, the Mechanical Driven power of drive motors is converted into the pressure that is applied to the wafer substrates surface.Be placed on one or one group of permanent magnet of vacuum chamber outside and coupling set of permanent magnets centering, and drive motors is fixed together, along with drive motors moves up and down; Another piece of coupling set of permanent magnets centering or one group and ceramic pressure ring link together, and by magnetic couple, drive the ceramic pressure ring that is placed in the vacuum chamber and move up and down, and ceramic pressure ring occurs in vacuum chamber the card of wafer substrates pressed or unclamp action.Drive motors is not mechanical " firmly being connected " with this connected mode between the ceramic pressure ring, but a kind of " being flexible coupling " mode with self-control characteristic.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 and Fig. 3 are the structural representation of the another kind of embodiment of the present invention;
Fig. 4 be among the present invention set of permanent magnets between the horizontal direction attraction with the variation diagram of relative displacement;
Fig. 5 is the simplified structure schematic diagram of chip card pressure device of the present invention;
Fig. 6 is that the present invention states the pressure state figure that puts on the wafer substrates surface under the excessive situation of drive motors stroke.
Wherein: vacuum cavity 01, electrode 02, wafer substrates 03, ceramic pressure ring 04, pressure ring connecting rod 05, connecting rod rack 06, set of permanent magnets to 07, permanent magnet support 08, motion guide rod 09, drive motors 10, electric machine support 11, soft vacuum corrugated pipe 12, wafer thimble 13, soft bellows 14, thimble support 15, drive leader 16.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
As shown in Figure 1, a kind of mechanical type chip card pressure device for the vacuum plasma body technology, comprise electrode 02, wafer substrates 03, ceramic pressure ring 04, pressure ring connecting rod 05, connecting rod rack 06, set of permanent magnets to 07, drive motors 10 and electric machine support 11; Described wafer substrates 03 is positioned on the electrode 02, and described ceramic pressure ring 04 is arranged on wafer substrates 03 top, is connected with connecting rod rack 06 by pressure ring connecting rod 05; Described set of permanent magnets comprises two corresponding first group of permanent magnet and second group of permanent magnets that mutual magnetic couple is set to 07; Described first group of permanent magnet is fixedly connected with connecting rod rack 06, and described second group of permanent magnet is fixed on the drive motors 10, and described drive motors 10 is flexibly connected and is arranged on the electric machine support 11.Also comprise vacuum cavity 01, described electrode 02 and vacuum cavity 01 form the vacuum chamber of a closure, and described wafer substrates 03 and ceramic pressure ring 04 place in the described vacuum chamber; Described pressure ring connecting rod 05 upper end is arranged in the vacuum chamber and links to each other with ceramic pressure ring 04, passes the chamber wall of vacuum cavity 01, and the other end is arranged on outside the vacuum chamber and links to each other with connecting rod rack 06.Also comprise soft vacuum corrugated pipe 12, the pressure ring connecting rod 05 outer soft vacuum corrugated pipe 12 that has been equipped with the vacuum seal effect between described vacuum cavity 01 outer surface and the connecting rod rack 06.Also comprise permanent magnet support 08 and motion guide rod 09, described first group of permanent magnet is fixedly connected with connecting rod rack 06 by permanent magnet support 08, and described permanent magnet support 08 is flexibly connected and is arranged on the motion guide rod 09.
As shown in Figures 2 and 3, a kind of mechanical type chip card pressure device for the vacuum plasma body technology, comprise vacuum cavity 01, electrode 02, wafer substrates 03, ceramic pressure ring 04, pressure ring connecting rod 05, connecting rod rack 06, set of permanent magnets to 07, permanent magnet support 08, motion guide rod 09, drive motors 10, electric machine support 11, soft vacuum corrugated pipe 12, drive leader 16; Also comprise wafer thimble 13 and thimble support 15, described wafer thimble 13 passes electrode 02, and the top contacts with the lower surface of wafer substrates 03, and the bottom is against on the thimble support 15; And/or, also comprise drive leader 16, be fixedly installed on the described connecting rod rack 06 and be useful on the drive leader 16 that driving wafer thimble 13 moves up and down, end structure matches with thimble support 15 bottoms on the described drive leader 16.Also comprise soft bellows 14, the wafer thimble 13 outer soft bellowss 14 that have been equipped with the vacuum seal effect between described electrode 02 and the thimble support 15.
As preferred version, described first group of permanent magnet and second group of permanent magnet are one or more permanent magnet, and the at grade opposite position that be arranged in parallel; And/or the vertical range between described first group of permanent magnet and the second group of permanent magnet parallel end faces is the 2-20 millimeter.
As preferred version, described first group of permanent magnet and second group of permanent magnet are that the remanent magnetism degree is at the permanent magnet of 0.5-1.5 tesla; And/or described first group of permanent magnet and second group of permanent magnet are rare-earth permanent magnet; And/or described first group of permanent magnet and second group of permanent magnet are neodymium iron permanent magnet or samarium cobalt permanent magnet body.
As preferred version, described first group of permanent magnet and second group of permanent magnet are provided with for the intensive aspect of realizing magnetic couple, and/or the material of described intensive aspect does not produce shielding, decays or disperses the magnetic force of permanent magnet, can play shielding action to high frequency electromagnetic radiation simultaneously; And/or the material of described intensive aspect is metallic aluminium, aluminium alloy, pottery or rigid plastics.
As preferred version, the little 2-10 millimeter of vertical range between first group of permanent magnet of the Thickness Ratio of described intensive aspect and the second group of permanent magnet parallel end faces.
Among the present invention, wafer substrates 03 and ceramic pressure ring 04 all are positioned in the vacuum chamber, and pressure ring connecting rod 05 passes the chamber wall of vacuum cavity 01, and all the other members can be positioned in the outer atmospheric pressure environment of vacuum chamber.In order to realize vacuum seal, the soft vacuum corrugated pipe 12 with vacuum sealing function has been installed also between the chamber of described vacuum chamber wall tapping and connecting rod rack 06.Pottery pressure ring 04, pressure ring connecting rod 05 are fixedly connected with connecting rod rack 06 one; Set of permanent magnets is fixedly connected on the permanent magnet support 08 permanent magnet blocks on the left side in 07, and permanent magnet support 08 is fixedly mounted on the bottom of connecting rod rack 06.Like this, these several members have just formed a mechanism that one connects.When described permanent magnet blocks moved up and down, the mechanism that just can drive this one connection moved up and down.In order to control direction and the accuracy that moves up and down, permanent magnet support 08 also needs to install with fixing motion guide rod 09 close fit; By selecting suitable Structure of Mechanical Parts (such as the roller bearing pulley), guide rod material and machining accuracy, the kinetic friction force between permanent magnet support 08 and the motion guide rod 09 can be very little.Set of permanent magnets is fixed together permanent magnet blocks and the drive motors 10 on the right in 07.Described drive motors need to be installed on the fixing electric machine support 11, and when the revolution of motor, drive motors 10 just can move up and down along electric machine support 11.Here, described electric machine support 11 also plays the direction of control drive motors motion and the effect of accuracy.Described drive motors can be stepping motor, also can be servomotor, needs the point-to-point speed of output 0.001-0.1 meter per second and 10-100 newton's actuating force.In order to guarantee validity and the accuracy by permanent magnet magnetic force transmission campaign, described motion guide rod 09 needs parallel installation with electric machine support 11.
The present invention and traditional device are very different.In traditional press fastening device, be that connecting rod and support by machinery directly is fixed and is connected between drive motors and the ceramic pressure ring, the power of drive motors output mechanically is directly passed to ceramic pressure ring, is applied on the wafer substrates.In press fastening device of the present invention, the support by machinery and connecting rod directly are not fixed and are connected between drive motors and the ceramic pressure ring, the actuating force of drive motors output passes to ceramic pressure ring with the physics mode of magnetic Field Coupling, and is applied on the wafer substrates.By the magnetic means transferring power of coupling permanent magnet, its principle is that two permanent magnets that attract each other can keep a stable relative position under the effect in magnetic field.When a permanent magnet in a pair of permanent magnet moved and departs from original settling position, the magnetic line of force will promote this part permanent magnet or another piece permanent magnet moves, in the hope of returning to original stable relative position.Therefore, can the size of the coupling magnetic force between two permanent magnets just become the key index that realize the machine power effective communication.At first, two permanent magnets need effectively to realize coupling.In actual applications, the end face opposing parallel of two permanent magnets of set of permanent magnets centering can be arranged, keep certain spatial joint clearance, and do not place other any barrier in the gap between two permanent magnets, as shown in Figure 1.For improve as far as possible set of permanent magnets between magnetic force, vertical range between two permanent magnet parallel end faces remains in the scope of 2-20 millimeter, and in the whole course of action of chip card pressure device, described set of permanent magnets is to remaining the state of end face opposing parallel, and the vertical range between the end face keeps invariable.
Under other situation of practical application, may need to place other object between the parallel end faces of two permanent magnets.Such as, set of permanent magnets to residing local space in, may have stronger radio-frequency electromagnetic radiation.For fear of the interference of electromagnetic radiation to drive motors and controller thereof, metallic plate need to be set, with shielding and protection drive motors and controller thereof around it.Have certain thickness material when placing between two permanent magnets when one, proper if material is selected, the magnetic line of force still can pass through this material, reaches magnetic couple, and just the intensity in magnetic field can be subject to decay to a certain degree or disperse.Therefore, barrier material should not be the stainless steel series material, stainless steel material such as 304 or 316 series, because ferrous material can issue magnetisation in the effect of the magnetic line of force, cause magnetic couple to lose efficacy, but can be any not easy magnetization such as aluminium, aluminium alloy, pottery, rigid plastics and the material that radio frequency electromagnetic is had good shielding properties.In order to reduce the attenuation degree in magnetic field, the thickness of material is unsuitable blocked up, and thickness less than set of permanent magnets to the vertical range between the parallel end faces.When using the aluminum or aluminum alloy material, material thickness is in the scope of 2-5 millimeter, and in the travel range of permanent magnet group to motion, material thickness can not change significantly, in order to avoid the magnetic force of coupling has greatly changed in travel range.Secondly, two set of permanent magnets between the size of magnetic force need to be complementary with the Payload of transmission.In other words, if magnetic force a little less than, just be not enough to promote overweight transmission load, the validity by magnetic force transmission campaign will reduce so.Therefore, when design and use transmission device described in the invention, should consider 2 points: the residual magnetization of (1) permanent magnet needs enough greatly, and the Payload that (2) are passed need to be as far as possible little.
Set of permanent magnets pair, if be comprised of the larger permanent magnet of remanent magnetism degree, then therebetween magnetic force is just larger.In the eighties in last century, the mankind have found to have neodymium iron permanent magnet (Nd2Fe14B) and the samarium cobalt permanent magnet body (SmCo) of the rare earth metal of superpower magnetic force, their remanent magnetism degree is respectively in 0.6-1.4 teslas and 0.8-1.2 teslas, approximately is 5-10 times of common iron nickel magnetic permanent magnet or higher.In today, the neodymium iron permanent magnet with superpower magnetic force and volume compact has become common commodity, and the price that can suit on market extensively obtains.
As shown in Figure 1 to Figure 3, the mechanism that connects with ceramic pressure ring one often has the deadweight of 0.5-5 kilogram; Can comprise the active force of device medi-spring member (not marking at figure) and the frictional force between the member, the Payload of mechanism in motion process that one connects may reach the 2-20 kilogram again.Set of permanent magnets will provide the magnetic force that can drive this Payload to 07.
The example of the another kind of implementation of the mechanical type chip card pressure device of vacuum plasma body technology of the present invention as shown in Figure 2.Except mechanical component as described in Figure 1, also comprise wafer thimble 13 and thimble support 15.In this example, wafer thimble 13 passes electrode 02, and its top contacts with the lower surface of wafer substrates 03.Because vacuum-packed needs, between the tapping of described electrode and thimble support 15, the soft bellows 14 with vacuum sealing function has been installed also.Move up and down in order to drive wafer thimble 13, between connecting rod rack 06 and thimble support 15, drive leader 16 has been installed also, described drive leader and connecting rod rack 06 are fixed together, and with the taper sheath of thimble support 15 bottoms locational corresponding relation are arranged.When the chip card pressure device was in extreme lower position, thimble support 15 was in released state with drive leader 16.
As shown in Figure 3, when drive motors 10 moved upward along electric machine support 11, set of permanent magnets drove permanent magnet support 08 to the magnetic force between 07 and moves upward, and promotes connecting rod rack 06 and pressure ring connecting rod 05, drives ceramic pressure ring 04 and moves to the extreme higher position.In this process, drive leader 16 also moves upward, and achieve a butt joint with the taper sheath of thimble support 15 bottoms and to cooperate, promoting wafer thimble 13 moves upward, make wafer substrates 03 leave electrode surface and arrive its extreme higher position, thereby withdraw from plasma process cavity and prepare for wafer substrates 03 is transmitted.Certainly, for ceramic pressure ring 04 and wafer substrates 03, its extreme higher position separately can not be the same.At this moment, the upper surface of wafer substrates 03 should than the low 2-5 millimeter in the surface bottom of ceramic pressure ring 04, leave vacuum chamber so that wafer substrates 03 is transmitted by manipulator (not shown in FIG.) easily.On extreme higher position shown in Figure 3, if wafer substrates 03 has been removed, so next wafer substrates just can be transmitted by manipulator and enter vacuum chamber, and is placed on the wafer thimble 13.After finishing This move, drive motors 10 just can move downward along electric machine support 11.Under the magneticaction between set of permanent magnets is to 07, permanent magnet support 08 is also followed and is moved downward, and drivening rod support 06, pressure ring connecting rod 05 and ceramic pressure ring 04 move downward.Simultaneously, drive leader 16 also moves downward, and drives thimble support 15 and wafer thimble 13 and moves downward; Finally, drive leader 16 breaks away from the taper sheath of thimble support 15 bottoms, and wafer substrates 03 is placed on the surface (referring to Fig. 2) of electrode 02.Subsequently, ceramic pressure ring 04 also moves near its extreme lower position, and beginning contacts with the upper surface of wafer substrates 03, and it is applied downward pressure.At this moment, the mode that pottery pressure ring 04 contacts with the upper surface of wafer substrates 03, with set of permanent magnets between magnetic force property direct relation is arranged, as shown in Figure 4: be between parastate and the separated permanent magnet at a pair of end face, there is a stable relative position, normally when two positions that permanent magnet is aligned with each other.On this position, there is not the attraction of horizontal direction.But, need only this stable relative position of relative level position deviation between two permanent magnets, will between two permanent magnets, produce the attraction of horizontal direction, and its size is closely related with the relative level displacement between the permanent magnet.In very little scope, such as the 2-5 millimeter, the attraction of horizontal direction sharply increases along with the increase of relative level displacement; Outside this scope, the attraction of horizontal direction reduces along with the increase of relative level displacement.The attraction of this horizontal direction makes set of permanent magnets to the trend of recovering and remaining on stable relative position is arranged just.
Further, when a permanent magnet of set of permanent magnets centering (initiatively permanent magnet) setting in motion, another piece permanent magnet (passive permanent magnet) needs just can move after the in the horizontal direction attraction generation, and therefore, the motion of passive permanent magnet will lag behind initiatively permanent magnet in time.This hysteresis effect is the prerequisite of eliminating the instant impact that the wafer substrates surface is caused because the drive motors movement travel is excessive.
Refer now to the situation that actual capabilities at a glance occur, i.e. drive motors movement travel is excessive or wafer substrates thickness is excessive, touches moment on wafer substrates surface at ceramic pressure ring, and drive motors is also continuing motion.For the purpose of simplifying the description, in as shown in Figure 5, the electrode 02, wafer substrates 03, ceramic pressure ring 04, pressure ring connecting rod 05, connecting rod rack 06, set of permanent magnets that has only drawn plasma processing tool to 07, permanent magnet support 08 and drive motors 10, wherein set of permanent magnets marks with dashed circle 07., touch moment of wafer substrates 03 at ceramic pressure ring 04 here, drive motors 10 also moves downward continuing.Because wafer substrates 03 is positioned on fixing electrode 02 surface, so in case ceramic pressure ring touches wafer substrates, its motion stops at once, set of permanent magnets to 07 in the at once stop motion of also having to of the permanent magnet on the left side.Touch moment of wafer substrates 03 at ceramic pressure ring 04, set of permanent magnets might as well be called this position " position 1 " to having a relative position between two permanent magnets in 07.On this position, the pressure that ceramic pressure ring is applied to wafer substrates 03 surface in moment is equivalent to the permanent magnet coupling magnetic force in the proper motion process.Because the hysteresis effect of coupling permanent magnet, described coupling magnetic force is less, and therefore, the pressure that is applied to the wafer substrates surface is also less, as shown in Figure 6.
Set of permanent magnets to 07 in after the permanent magnet stop motion on the left side, drive motors 10 and another piece permanent magnet that is fixedly connected on the motor continue to move downward, arrive " position 2 ", this moment, set of permanent magnets increased the relative displacement between two permanent magnets in 07, the pressure that causes being applied to wafer substrates 03 surface by ceramic pressure ring 04 strengthens, and further increases the card pressure to wafer substrates.But, this pressure applies when ceramic pressure ring and wafer substrates all remain static, so do not have the effect of any impact.
The technology Optimality of the mechanical type chip card pressure device that the present invention relates to can obtain explanation from the foregoing description.In traditional chip card pressure device, the pressure that wafer substrates is born is equivalent to the direct power output of drive motors, and the size of this power output depends on the rotating speed of electric motor; The rotating speed of motor is lower, and power output is larger.What pay close attention to is the point-to-point speed of drive motors and people are common, so the point-to-point speed of drive motors may be very low, and power output is very large.Like this, when the power output of drive motors is sent to wafer substrates surperficial, just may cause the damage to wafer substrates.But to transmission during power, situation is just made a world of difference by set of permanent magnets.Be transported to the size of the power on wafer substrates surface, little, directly related with the point-to-point speed of drive motors on the contrary with the relation of the power output of drive motors; Straight-line speed is lower, and carrying capacity is less.Like this, as long as the movement velocity of drive motors is suitable, such as the 0.005-0.01 meter per second, touch moment on wafer substrates surface at ceramic pressure ring, the power that is applied on the wafer substrates is just very little.Further, from the explanation of front, it is also understood that, utilize set of permanent magnets to transmission power, because the hysteresis effect of magnetic force, in the situation of the excessive in good time stop motion of drive motors stroke, press fastening device has very large Srilane toughness, thereby the wafer substrates that is applied to different-thickness and surface smoothness is had very large compatibility.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. mechanical type chip card pressure device that is used for the vacuum plasma body technology, comprise wafer substrates (03) and electrode (02), described wafer substrates (03) is positioned on the electrode (02), it is characterized in that: comprise that also ceramic pressure ring (04), pressure ring connecting rod (05), connecting rod rack (06), set of permanent magnets are to (07), drive motors (10), electric machine support (11); Described ceramic pressure ring (04) is arranged on wafer substrates (03) top, is connected with connecting rod rack (06) by pressure ring connecting rod (05); Described set of permanent magnets comprises two corresponding first group of permanent magnet and second group of permanent magnets that mutual magnetic couple is set to (07); Described first group of permanent magnet is fixedly connected with connecting rod rack (06), and described second group of permanent magnet is fixed on the drive motors (10), and described drive motors (10) is flexibly connected and is arranged on the electric machine support (11).
2. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1, it is characterized in that: also comprise vacuum cavity (01), described electrode (02) and vacuum cavity (01) form the vacuum chamber of a closure, and described wafer substrates (03) and ceramic pressure ring (04) place in the described vacuum chamber; Described pressure ring connecting rod (05) upper end is arranged in the vacuum chamber and links to each other with ceramic pressure ring (04), passes the chamber wall of vacuum cavity (01), and the other end is arranged on outside the vacuum chamber and links to each other with connecting rod rack (06).
3. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 2, it is characterized in that: also comprise soft vacuum corrugated pipe (12), be equipped with the soft vacuum corrugated pipe (12) of vacuum seal effect outside the pressure ring connecting rod (05) between described vacuum cavity (01) outer surface and connecting rod rack (06).
4. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1, it is characterized in that: also comprise permanent magnet support (08) and motion guide rod (09), described first group of permanent magnet is fixedly connected with connecting rod rack (06) by permanent magnet support (08), and described permanent magnet support (08) is flexibly connected and is arranged on the motion guide rod (09).
5. each described mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1-4, it is characterized in that: also comprise wafer thimble (13) and thimble support (15), described wafer thimble (13) passes electrode (02), the top contacts with the lower surface of wafer substrates (03), and the bottom is against on the thimble support (15); And/or, also comprise drive leader (16), be fixedly installed on the described connecting rod rack (06) and be useful on the drive leader (16) that driving wafer thimble (13) moves up and down, the upper end structure of described drive leader (16) matches with thimble support (15) bottom.
6. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 5, it is characterized in that: also comprise soft bellows (14), be equipped with the soft bellows (14) of vacuum seal effect outside the wafer thimble (13) between described electrode (02) and thimble support (15).
7. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1, it is characterized in that: described first group of permanent magnet and second group of permanent magnet are one or more permanent magnet, and the at grade opposite position that be arranged in parallel; And/or the vertical range between described first group of permanent magnet and the second group of permanent magnet parallel end faces is the 2-20 millimeter.
8. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1, it is characterized in that: described first group of permanent magnet and second group of permanent magnet are that the remanent magnetism degree is at the permanent magnet of 0.5-1.5 tesla; And/or described first group of permanent magnet and second group of permanent magnet are rare-earth permanent magnet; And/or described first group of permanent magnet and second group of permanent magnet are neodymium iron permanent magnet or samarium cobalt permanent magnet body.
9. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 1, it is characterized in that: described first group of permanent magnet and second group of permanent magnet are provided with for the intensive aspect of realizing magnetic couple, and/or, the material of described intensive aspect does not produce shielding, decays or disperses the magnetic force of permanent magnet, can play shielding action to high frequency electromagnetic radiation simultaneously; And/or the material of described intensive aspect is metallic aluminium, aluminium alloy, pottery or rigid plastics.
10. the mechanical type chip card pressure device for the vacuum plasma body technology according to claim 9 is characterized in that: the little 2-10 millimeter of vertical range between first group of permanent magnet of the Thickness Ratio of described intensive aspect and the second group of permanent magnet parallel end faces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210523699 CN103066003A (en) | 2012-12-10 | 2012-12-10 | Mechanical-type chip clamping-pressing device for vacuum plasma technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210523699 CN103066003A (en) | 2012-12-10 | 2012-12-10 | Mechanical-type chip clamping-pressing device for vacuum plasma technology |
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|---|---|
| CN103066003A true CN103066003A (en) | 2013-04-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210523699 Pending CN103066003A (en) | 2012-12-10 | 2012-12-10 | Mechanical-type chip clamping-pressing device for vacuum plasma technology |
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| CN (1) | CN103066003A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367215A (en) * | 2013-06-08 | 2013-10-23 | 天通吉成机器技术有限公司 | Substrate positioning lifting device for plasma etching equipment |
| CN103646840A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Wafer fixing device for pre-cooling cavity of ion implantation machine |
| CN104752290A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lifting system and plasma processing apparatus |
| CN106206399A (en) * | 2015-04-30 | 2016-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring arrangements and reaction chamber |
| CN108928620A (en) * | 2017-05-24 | 2018-12-04 | 上海凯世通半导体股份有限公司 | Vacuum sealing device and vacuum steerable system comprising it |
| CN111341720A (en) * | 2018-12-19 | 2020-06-26 | 江苏鲁汶仪器有限公司 | Wafer unloading and pressing device |
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2012
- 2012-12-10 CN CN 201210523699 patent/CN103066003A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367215A (en) * | 2013-06-08 | 2013-10-23 | 天通吉成机器技术有限公司 | Substrate positioning lifting device for plasma etching equipment |
| CN103367215B (en) * | 2013-06-08 | 2016-08-24 | 天通吉成机器技术有限公司 | A kind of substrate positioning-lifting device of plasma etching equipment |
| CN103646840A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | Wafer fixing device for pre-cooling cavity of ion implantation machine |
| CN104752290A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lifting system and plasma processing apparatus |
| CN106206399A (en) * | 2015-04-30 | 2016-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring arrangements and reaction chamber |
| CN106206399B (en) * | 2015-04-30 | 2018-12-11 | 北京北方华创微电子装备有限公司 | Pressure ring arrangements and reaction chamber |
| CN108928620A (en) * | 2017-05-24 | 2018-12-04 | 上海凯世通半导体股份有限公司 | Vacuum sealing device and vacuum steerable system comprising it |
| CN108928620B (en) * | 2017-05-24 | 2023-05-12 | 上海凯世通半导体股份有限公司 | Vacuum sealing device and vacuum control system comprising same |
| CN111341720A (en) * | 2018-12-19 | 2020-06-26 | 江苏鲁汶仪器有限公司 | Wafer unloading and pressing device |
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Application publication date: 20130424 |