CN103060740A - Airglow-discharge low-temperature plasma coating technique - Google Patents

Airglow-discharge low-temperature plasma coating technique Download PDF

Info

Publication number
CN103060740A
CN103060740A CN2013100335886A CN201310033588A CN103060740A CN 103060740 A CN103060740 A CN 103060740A CN 2013100335886 A CN2013100335886 A CN 2013100335886A CN 201310033588 A CN201310033588 A CN 201310033588A CN 103060740 A CN103060740 A CN 103060740A
Authority
CN
China
Prior art keywords
low
temperature plasma
temperature
discharge
airglow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013100335886A
Other languages
Chinese (zh)
Other versions
CN103060740B (en
Inventor
向勇
闫宗楷
朱焱麟
常小幻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Xinghe Material Technology Co Ltd
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201310033588.6A priority Critical patent/CN103060740B/en
Publication of CN103060740A publication Critical patent/CN103060740A/en
Application granted granted Critical
Publication of CN103060740B publication Critical patent/CN103060740B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention provides an airglow-discharge low-temperature plasma coating technique, belonging to the field of plasma coating. The technique can effectively solve the problems of the overhigh coating temperature can damage the substrate and the preparation technique is complex in the field of coating. The technique comprises the following steps: a. low-temperature plasma breakdown by electrifying a discharge tube: gas introduced from a gas source reaches breakdown voltage under the action of a power source with an excitation source, and discharge is initiated to excite and generate low-temperature plasma; b. introduction of a powder material: the fed powder material is locally heated to be molten under the action of the low-temperature plasma and is accelerated; and c. injection and coating of low-temperature plasma: the powder material and the low-temperature plasma are injected together and deposited on the substrate surface to implement coating. The invention can be widely used for preparing metal materials, semiconductor materials, compound materials, polymers and other materials in the fields of printing electronics, 3D printing and the like.

Description

A kind of airglow discharge low-temperature plasma coating technique
Technical field
The present invention relates to the plasma coating field, specifically refer to a kind of airglow discharge low-temperature plasma coating technique.
Background technology
Current vacuum coating technology especially plasma body vacuum coating technology is being brought into play extremely important effect in fields such as field of electronic components manufacturing, electric circuit electronics technical field, solar cells.It compares antivacuum technology of preparing, although have film growth densification, preparation speed fast, be easy to control the advantage such as thin film composition, simultaneously because equipment is complicated, higher, the complicated operation of material preparation cost is unfavorable for reducing material cost usually.And the antivacuum plasma coating technology of current widespread use is owing to adopt thermal plasma, temperature is higher, and the thin film deposition substrate is required height, and the use of the base material of the poor heat resistance such as paper, macromolecular material is restricted, energy expenditure is large simultaneously, is unfavorable for enlarging its use range.
Usually cold plasma can be divided into two classes, and a class is thermal equilibrium plasma, and another kind of is nonthermal plasma.What traditional plasma film coating equipment adopted is thermal equilibrium plasma, because the electronics that wherein quality is less has identical temperature with the larger atom of quality with ion, so it is higher to have high-octane plasma temperature; And nonthermal plasma is not because larger atom and the ion of the less electronics of wherein quality and quality reaches thermal equilibrium state, the electronic temp that causes little quality is very high and atom and ion temperature large quality are very low, and what determine plasma temperature is atom and the ion of large quality, so the plasma body bulk temperature is very low.
Temperature is lower, the electric density high because low-temperature plasma has, be widely used at present the fields such as material surface modifying, biological sterilization, cleaning surfaces and sewage cleaning, simultaneously because it has higher-energy, low-temperature plasma also can be used as the carrier of material granule, make material granule have larger energy, be convenient to deposit film forming.
Summary of the invention
The objective of the invention is provides a kind of airglow discharge low-temperature plasma coating technique for the deficiency of above-mentioned vacuum plasma coating technique and normal atmosphere high-temperature plasma coating technique, this technology coating temperature is low, can effectively solve the too high problem that can damage substrate and complicated process of preparation of coating temperature that the plated film field exists.
The technical solution adopted for the present invention to solve the technical problems is: a kind of airglow discharge low-temperature plasma coating technique is provided, its step comprises: a, energising puncture low-temperature plasma process in discharge tube, the gas that is passed into by gas source is issued to voltage breakdown in the effect of the power supply that is added with driving source, and the conducting discharge excitation produces low-temperature plasma; B, powder body material importing process, the powder body material of sending into local temperature under the effect of low-temperature plasma raises and melts and acceleration; C, low-temperature plasma ejection plated film implementation procedure, powder body material sprays with low-temperature plasma, is deposited on substrate surface and realizes plated film.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, described discharge tube comprises that gas passes into mouth, negative electrode, anode, electrolyte barrier and spout, the low-temperature plasma temperature is 10-150 ℃.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, the optional DC pulse of driving source, interchange, radio frequency and microwave power supply.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, the gas that passes into can be selected Ar, N 2, O 2, H 2With air and mixed gas, passing into gas flow is 1-40L/min.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step b, the powder lead-in mode is the internal powder conveying mode, and powder feeding rate is 10-35g/min, and the powder granule diameter is less than 10 μ m.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step c, the distance of spout and substrate is 80mm-150mm.
Compare the present invention with traditional coating technique and have also that coating temperature is low, the characteristics such as plated film precision height and coating film thickness are thicker, the contrast of itself and traditional coating technique is as follows:
Coating technique Thicknesses of layers Base reservoir temperature
The vapour deposition of PVD(physical vacuum) 1-10μm 200-500℃
The CVD(chemical vapour deposition) 1-50μm 400-2000℃
Thermospray 40-3000μm 300-750℃
Airglow discharge low-temperature plasma plated film 1-200μm 10-150℃
The present invention has following outstanding beneficial effect:
1, since utilization of the present invention be that low-temperature plasma is realized plated film as carrier, so it is applicable to the plated film of the substrate material surface of the poor heat resistance such as paper, macromolecular material, reduced the complicated process of preparation degree, avoid damaging because coating temperature is too high the problem of substrate, enlarged use range.
2, owing to the optional DC pulse of driving source of the present invention, interchange, radio frequency and microwave power supply, the gas that passes into can be selected Ar, N 2, O 2, H 2With air and mixed gas, so it can select different driving source and pass into gas according to differing materials, so that coating effects is better.
Description of drawings
Accompanying drawing 1 is the schema of airglow discharge low-temperature plasma film coating technology of the present invention;
Accompanying drawing 2 is the principle schematic of airglow discharge low-temperature plasma film coating technology of the present invention;
Description of reference numerals: 1 substrate, 2 films, 3 low-temperature plasmas, 4 powder introducing ports, 5 anodes, 6 negative electrodes, 7 gases pass into mouth, 8 discharge tubes, 9 electrolyte barriers, 10 spouts.
Embodiment
As shown in Figure 1 and Figure 2, a kind of airglow discharge low-temperature plasma film coating technology of the present invention, its step comprises: S1, energising puncture low-temperature plasma 3 processes in discharge tube 8, pass into mouthful 7 gases that pass into by gas source by gas and be issued to voltage breakdown in the effect of the power supply that is added with driving source, and the conducting discharge excitation produces low-temperature plasma 3; S2, powder body material importing process are melted and are accelerated by powder body material local temperature rising under the effect of low-temperature plasma 3 that powder introducing port 4 is sent into; S3, low-temperature plasma 3 ejection plated film implementation procedures, powder body material sprays spout 10 with low-temperature plasma 3, is deposited on substrate 1 surface and forms film 2.
In step S1, discharge tube 1 comprises that gas passes into mouth 7, negative electrode 6, anode 5, electrolyte barrier 9 and spout 10.Electrode materials can be selected resistant to elevated temperatures tungsten, copper, graphite, and discharge tube can adopt four fluorinated ethylene propylenes (Teflon), quartz, aluminum oxide, boron nitride.The optional DC pulse of driving source, interchange, radio frequency and microwave power supply; Institute's making alive scope is 2-50KV, and the pulse-repetition scope is 7KHz-15MHz, preferred 20KHz-70KHz; When adopting DC pulse, pulsed voltage width 600nm-80 μ m; When adopting radio-frequency power supply, power 10-300mW.The gas that passes into can be selected Ar, N 2, O 2, H 2With air and mixed gas, passing into gas flow is 1-40L/min.
In step S2, the powder lead-in mode is the internal powder conveying mode, and powder feeding rate is 10-35g/min, and the powder granule diameter is less than 10 μ m.
In step S3, spout 10 is 80mm-150mm with the distance of substrate 1.
Plate the quality of film in order to guarantee, the low-temperature plasma that can also adopt the present invention not pass into powder body material after plated film finishes is used for material and takes off fire, helps the material crystallization.
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated:
Embodiment 1
It is N that present embodiment is selected gas 2Driving source is direct current pulse power source; Electrode materials is selected Graphite Electrodes, and discharge tube adopts polytetrafluoroethylmaterial material to make.Coating process is as follows:
S1, with N 2Pass into mouth 7 by gas and pass into discharge tube 1, its gas flow 6-20L/min; Add direct current pulse power source at anode 5 and negative electrode 6, voltage range is 2-15KV, and the pulse-repetition scope is 7KHz-50KHz, pulsed voltage width 600nm-80 μ m; Low-temperature plasma 3 temperature that produce are 10-100 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-25g/min, and local temperature raises under the effect of low-temperature plasma 3; S3, powder body material melt and accelerate ejection spout 10, are deposited on substrate 1 surface deposition and form film 2; Spout 10 is 100mm-150mm with substrate 1 distance.
Embodiment 2
It is Ar that present embodiment is selected gas; Driving source adopts radio-frequency power supply; Electrode materials is selected tungsten electrode, and discharge tube adopts alumina material to make.Coating process is as follows:
S1, Ar is passed into mouthfuls 7 by gas pass into discharge tube 1, its gas flow 10-20L/min; Add radio-frequency power supply at anode 5 and negative electrode 6, power 10-300mW, the pulse-repetition scope is 7.17MHz-15MHz, is preferably 13.56MHz; Low-temperature plasma 3 temperature that produce are 50-150 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-35g/min, and local temperature raises under the effect of low-temperature plasma 3.S3, powder body material melt and accelerate ejection spout 10, form film 2 at substrate 1 surface deposition; Spout 10 is 100mm-120mm with the distance of substrate 1.
Embodiment 3
It is N that present embodiment is selected gas 2With the Ar mixed gas; Driving source adopts AC power; Electrode materials is selected copper electrode, and discharge tube adopts boron nitride material to make.Coating process is as follows:
S1, with N 2Pass into mouth 7 by gas and pass into discharge tube 1, its gas flow 6-20L/min; Ar is passed into mouth 7 by gas pass into discharge tube 1, its gas flow 1-10L/min; Add AC power at anode 5 and negative electrode 6, voltage range is 5-50KV, and the pulse-repetition scope is 20KHz-50KHz; Low-temperature plasma 3 temperature that produce are 70-100 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-35g/min, and local temperature raises under the effect of low-temperature plasma 3.S3, powder body material melt and accelerate ejection spout 10, form film 2 at substrate 1 surface deposition; Spout 10 is 80mm-140mm with the distance of substrate 1.
Airglow discharge low-temperature plasma coating technique of the present invention, the too high meeting of normal atmosphere coating temperature that can effectively solve the existence of plated film field damages the problems such as substrate and complicated process of preparation, can be widely used in the material preparations such as field metallic substance, semiconductor material, compound-material and polymer such as printed electronics, 3D printing.
The above is preferred embodiment of the present invention only, is not that the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away from the technical solution of the present invention scope situation, all can utilize technology contents described above that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention to any change modification, equivalent variations and modification that above embodiment makes, all belongs to the protection domain of the technical program according to technical spirit of the present invention.

Claims (6)

1. airglow discharge low-temperature plasma coating technique, it is characterized in that: step comprises: a, energising puncture low-temperature plasma process in discharge tube, the gas that is passed into by gas source is issued to voltage breakdown in the effect of the power supply that is added with driving source, and the conducting discharge excitation produces low-temperature plasma; B, powder body material importing process, the powder body material of sending into local temperature under the effect of low-temperature plasma raises and melts and acceleration; C, low-temperature plasma ejection plated film implementation procedure, powder body material sprays with low-temperature plasma, is deposited on substrate surface and realizes plated film.
2. a kind of airglow discharge low-temperature plasma coating technique according to claim 1, it is characterized in that: in step a, described discharge tube comprises that gas passes into mouth, negative electrode, anode, electrolyte barrier and spout, and the low-temperature plasma temperature is 10-150 ℃.
3. a kind of airglow discharge low-temperature plasma coating technique according to claim 1 is characterized in that: in step a, and the optional DC pulse of driving source, interchange, radio frequency and microwave.
4. a kind of airglow discharge low-temperature plasma coating technique according to claim 1, it is characterized in that: in step a, the gas that passes into can be selected Ar, N 2, O 2, H 2With air and mixed gas, passing into gas flow is 1-40L/min.
5. a kind of airglow discharge low-temperature plasma coating technique according to claim 1, it is characterized in that: in step b, the powder lead-in mode is the internal powder conveying mode, and powder feeding rate is 10-35g/min, and the powder granule diameter is less than 10 μ m.
6. a kind of airglow discharge low-temperature plasma coating technique according to claim 1, it is characterized in that: in step c, the distance of spout and substrate is 80mm-150mm.
CN201310033588.6A 2013-01-29 2013-01-29 Airglow-discharge low-temperature plasma coating technique Active CN103060740B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310033588.6A CN103060740B (en) 2013-01-29 2013-01-29 Airglow-discharge low-temperature plasma coating technique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310033588.6A CN103060740B (en) 2013-01-29 2013-01-29 Airglow-discharge low-temperature plasma coating technique

Publications (2)

Publication Number Publication Date
CN103060740A true CN103060740A (en) 2013-04-24
CN103060740B CN103060740B (en) 2015-04-08

Family

ID=48103628

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310033588.6A Active CN103060740B (en) 2013-01-29 2013-01-29 Airglow-discharge low-temperature plasma coating technique

Country Status (1)

Country Link
CN (1) CN103060740B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105922566A (en) * 2015-11-17 2016-09-07 中研智能装备有限公司 Plasma fusion covering direct manufacture 3D printing equipment and method
CN113862607A (en) * 2021-10-11 2021-12-31 昀昊精密模具五金(深圳)有限公司 Plasma treatment device for surface of die part

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050158480A1 (en) * 2002-04-10 2005-07-21 Goodwin Andrew J. Protective coating composition
CN101555588A (en) * 2009-03-18 2009-10-14 成都同明新材料技术有限公司 Low-temperature plasma system based on atmosphere pressure glow discharge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050158480A1 (en) * 2002-04-10 2005-07-21 Goodwin Andrew J. Protective coating composition
CN101555588A (en) * 2009-03-18 2009-10-14 成都同明新材料技术有限公司 Low-temperature plasma system based on atmosphere pressure glow discharge

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘忠伟等: "低温等离子体射流制备二氧化钛薄膜及其光催化活性的研究", 《真空科学与技术学报》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105922566A (en) * 2015-11-17 2016-09-07 中研智能装备有限公司 Plasma fusion covering direct manufacture 3D printing equipment and method
CN105922566B (en) * 2015-11-17 2018-06-29 中研智能装备有限公司 A kind of plasma cladding directly manufactures 3D printing device and method
CN113862607A (en) * 2021-10-11 2021-12-31 昀昊精密模具五金(深圳)有限公司 Plasma treatment device for surface of die part

Also Published As

Publication number Publication date
CN103060740B (en) 2015-04-08

Similar Documents

Publication Publication Date Title
TWI608122B (en) Chemical vapor deposition apparatus and method for producing chemical vapor deposition film
KR102192359B1 (en) Plasma cvd device and plasma cvd method
CN101802259B (en) Device for very high frequency plasma assisted CVD under atmospheric pressure, and applications thereof
US10023961B2 (en) Installation for depositing films onto a substrate
CN101164689A (en) Nanocrystalline porous TiO2 film and preparation method thereof
CN106480420A (en) A kind of high-density plasma sputtering coating equipment
JP2017122282A (en) Production of transparent conductive film
CN103060740B (en) Airglow-discharge low-temperature plasma coating technique
CN101497994A (en) Method for preparing DLC film, DLC membrane vessel manufactured thereby and production apparatus
CN101413104A (en) Method for preparing copper nitride film by ion beam enhanced deposition
CN103436849B (en) A kind of sputtering method of sull
JP2011214062A (en) Method for manufacturing transparent conductive film
CN100395371C (en) Apparatus for reinforcing arc-glow percolation plated ceating by microwave plasma and process thereof
CN103958726A (en) Film member and method for producing same
CN110042371B (en) Device and method for preparing porous thermal barrier coating by adopting low-temperature plasma
JP2001158415A (en) Plastic bottle for atmospheric low temperature plasma treatment and its manufacturing method
CN102157262B (en) Method for preparing capacitor with Ta205 thin film as dielectric film
CN103266303A (en) Electronic device adopting magnetron sputtering to plate film, and manufacturing method thereof
CN104099586B (en) Preparation method for film
US20100075510A1 (en) Method for Pulsed plasma deposition of titanium dioxide film
EP1619266B1 (en) Method and apparatus for chemical plasma processing of plastic containers
Corbella et al. Plasma-enhanced chemical vapor deposition of thin films
JP2007056329A (en) Transparent electroconductive film and its depositing method
JP2003285844A (en) Plastic container
JP4873168B2 (en) Method for producing gas barrier film

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20151209

Address after: 315040 Zhejiang city of Ningbo province high tech Zone Juxian Road No. 1299

Patentee after: INFINITE MATERIALS TECHNOLOGY CO., LTD.

Address before: 610017, No. 2006, West Avenue, Chengdu hi tech Zone (West District, Sichuan)

Patentee before: University of Electronic Science and Technology of China

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 315000 Ningbo High-tech Zone Ningbo New Material Innovation Center East District No. 1 10-4-1, Zhejiang Province

Patentee after: Ningbo Xinghe Material Technology Co., Ltd.

Address before: 315040 No. 1299 Juxian Road, Ningbo High-tech Zone, Zhejiang Province

Patentee before: INFINITE MATERIALS TECHNOLOGY CO., LTD.