A kind of airglow discharge low-temperature plasma coating technique
Technical field
The present invention relates to the plasma coating field, specifically refer to a kind of airglow discharge low-temperature plasma coating technique.
Background technology
Current vacuum coating technology especially plasma body vacuum coating technology is being brought into play extremely important effect in fields such as field of electronic components manufacturing, electric circuit electronics technical field, solar cells.It compares antivacuum technology of preparing, although have film growth densification, preparation speed fast, be easy to control the advantage such as thin film composition, simultaneously because equipment is complicated, higher, the complicated operation of material preparation cost is unfavorable for reducing material cost usually.And the antivacuum plasma coating technology of current widespread use is owing to adopt thermal plasma, temperature is higher, and the thin film deposition substrate is required height, and the use of the base material of the poor heat resistance such as paper, macromolecular material is restricted, energy expenditure is large simultaneously, is unfavorable for enlarging its use range.
Usually cold plasma can be divided into two classes, and a class is thermal equilibrium plasma, and another kind of is nonthermal plasma.What traditional plasma film coating equipment adopted is thermal equilibrium plasma, because the electronics that wherein quality is less has identical temperature with the larger atom of quality with ion, so it is higher to have high-octane plasma temperature; And nonthermal plasma is not because larger atom and the ion of the less electronics of wherein quality and quality reaches thermal equilibrium state, the electronic temp that causes little quality is very high and atom and ion temperature large quality are very low, and what determine plasma temperature is atom and the ion of large quality, so the plasma body bulk temperature is very low.
Temperature is lower, the electric density high because low-temperature plasma has, be widely used at present the fields such as material surface modifying, biological sterilization, cleaning surfaces and sewage cleaning, simultaneously because it has higher-energy, low-temperature plasma also can be used as the carrier of material granule, make material granule have larger energy, be convenient to deposit film forming.
Summary of the invention
The objective of the invention is provides a kind of airglow discharge low-temperature plasma coating technique for the deficiency of above-mentioned vacuum plasma coating technique and normal atmosphere high-temperature plasma coating technique, this technology coating temperature is low, can effectively solve the too high problem that can damage substrate and complicated process of preparation of coating temperature that the plated film field exists.
The technical solution adopted for the present invention to solve the technical problems is: a kind of airglow discharge low-temperature plasma coating technique is provided, its step comprises: a, energising puncture low-temperature plasma process in discharge tube, the gas that is passed into by gas source is issued to voltage breakdown in the effect of the power supply that is added with driving source, and the conducting discharge excitation produces low-temperature plasma; B, powder body material importing process, the powder body material of sending into local temperature under the effect of low-temperature plasma raises and melts and acceleration; C, low-temperature plasma ejection plated film implementation procedure, powder body material sprays with low-temperature plasma, is deposited on substrate surface and realizes plated film.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, described discharge tube comprises that gas passes into mouth, negative electrode, anode, electrolyte barrier and spout, the low-temperature plasma temperature is 10-150 ℃.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, the optional DC pulse of driving source, interchange, radio frequency and microwave power supply.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step a, the gas that passes into can be selected Ar, N
2, O
2, H
2With air and mixed gas, passing into gas flow is 1-40L/min.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step b, the powder lead-in mode is the internal powder conveying mode, and powder feeding rate is 10-35g/min, and the powder granule diameter is less than 10 μ m.
A kind of airglow discharge low-temperature plasma coating technique of the present invention, in step c, the distance of spout and substrate is 80mm-150mm.
Compare the present invention with traditional coating technique and have also that coating temperature is low, the characteristics such as plated film precision height and coating film thickness are thicker, the contrast of itself and traditional coating technique is as follows:
Coating technique |
Thicknesses of layers |
Base reservoir temperature |
The vapour deposition of PVD(physical vacuum) |
1-10μm |
200-500℃ |
The CVD(chemical vapour deposition) |
1-50μm |
400-2000℃ |
Thermospray |
40-3000μm |
300-750℃ |
Airglow discharge low-temperature plasma plated film |
1-200μm |
10-150℃ |
The present invention has following outstanding beneficial effect:
1, since utilization of the present invention be that low-temperature plasma is realized plated film as carrier, so it is applicable to the plated film of the substrate material surface of the poor heat resistance such as paper, macromolecular material, reduced the complicated process of preparation degree, avoid damaging because coating temperature is too high the problem of substrate, enlarged use range.
2, owing to the optional DC pulse of driving source of the present invention, interchange, radio frequency and microwave power supply, the gas that passes into can be selected Ar, N
2, O
2, H
2With air and mixed gas, so it can select different driving source and pass into gas according to differing materials, so that coating effects is better.
Description of drawings
Accompanying drawing 1 is the schema of airglow discharge low-temperature plasma film coating technology of the present invention;
Accompanying drawing 2 is the principle schematic of airglow discharge low-temperature plasma film coating technology of the present invention;
Description of reference numerals: 1 substrate, 2 films, 3 low-temperature plasmas, 4 powder introducing ports, 5 anodes, 6 negative electrodes, 7 gases pass into mouth, 8 discharge tubes, 9 electrolyte barriers, 10 spouts.
Embodiment
As shown in Figure 1 and Figure 2, a kind of airglow discharge low-temperature plasma film coating technology of the present invention, its step comprises: S1, energising puncture low-temperature plasma 3 processes in discharge tube 8, pass into mouthful 7 gases that pass into by gas source by gas and be issued to voltage breakdown in the effect of the power supply that is added with driving source, and the conducting discharge excitation produces low-temperature plasma 3; S2, powder body material importing process are melted and are accelerated by powder body material local temperature rising under the effect of low-temperature plasma 3 that powder introducing port 4 is sent into; S3, low-temperature plasma 3 ejection plated film implementation procedures, powder body material sprays spout 10 with low-temperature plasma 3, is deposited on substrate 1 surface and forms film 2.
In step S1, discharge tube 1 comprises that gas passes into mouth 7, negative electrode 6, anode 5, electrolyte barrier 9 and spout 10.Electrode materials can be selected resistant to elevated temperatures tungsten, copper, graphite, and discharge tube can adopt four fluorinated ethylene propylenes (Teflon), quartz, aluminum oxide, boron nitride.The optional DC pulse of driving source, interchange, radio frequency and microwave power supply; Institute's making alive scope is 2-50KV, and the pulse-repetition scope is 7KHz-15MHz, preferred 20KHz-70KHz; When adopting DC pulse, pulsed voltage width 600nm-80 μ m; When adopting radio-frequency power supply, power 10-300mW.The gas that passes into can be selected Ar, N
2, O
2, H
2With air and mixed gas, passing into gas flow is 1-40L/min.
In step S2, the powder lead-in mode is the internal powder conveying mode, and powder feeding rate is 10-35g/min, and the powder granule diameter is less than 10 μ m.
In step S3, spout 10 is 80mm-150mm with the distance of substrate 1.
Plate the quality of film in order to guarantee, the low-temperature plasma that can also adopt the present invention not pass into powder body material after plated film finishes is used for material and takes off fire, helps the material crystallization.
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated:
Embodiment 1
It is N that present embodiment is selected gas
2Driving source is direct current pulse power source; Electrode materials is selected Graphite Electrodes, and discharge tube adopts polytetrafluoroethylmaterial material to make.Coating process is as follows:
S1, with N
2Pass into mouth 7 by gas and pass into discharge tube 1, its gas flow 6-20L/min; Add direct current pulse power source at anode 5 and negative electrode 6, voltage range is 2-15KV, and the pulse-repetition scope is 7KHz-50KHz, pulsed voltage width 600nm-80 μ m; Low-temperature plasma 3 temperature that produce are 10-100 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-25g/min, and local temperature raises under the effect of low-temperature plasma 3; S3, powder body material melt and accelerate ejection spout 10, are deposited on substrate 1 surface deposition and form film 2; Spout 10 is 100mm-150mm with substrate 1 distance.
Embodiment 2
It is Ar that present embodiment is selected gas; Driving source adopts radio-frequency power supply; Electrode materials is selected tungsten electrode, and discharge tube adopts alumina material to make.Coating process is as follows:
S1, Ar is passed into mouthfuls 7 by gas pass into discharge tube 1, its gas flow 10-20L/min; Add radio-frequency power supply at anode 5 and negative electrode 6, power 10-300mW, the pulse-repetition scope is 7.17MHz-15MHz, is preferably 13.56MHz; Low-temperature plasma 3 temperature that produce are 50-150 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-35g/min, and local temperature raises under the effect of low-temperature plasma 3.S3, powder body material melt and accelerate ejection spout 10, form film 2 at substrate 1 surface deposition; Spout 10 is 100mm-120mm with the distance of substrate 1.
Embodiment 3
It is N that present embodiment is selected gas
2With the Ar mixed gas; Driving source adopts AC power; Electrode materials is selected copper electrode, and discharge tube adopts boron nitride material to make.Coating process is as follows:
S1, with N
2Pass into mouth 7 by gas and pass into discharge tube 1, its gas flow 6-20L/min; Ar is passed into mouth 7 by gas pass into discharge tube 1, its gas flow 1-10L/min; Add AC power at anode 5 and negative electrode 6, voltage range is 5-50KV, and the pulse-repetition scope is 20KHz-50KHz; Low-temperature plasma 3 temperature that produce are 70-100 ℃.S2, the powder body material powder feeding rate that imports by powder introducing port 4 are 10-35g/min, and local temperature raises under the effect of low-temperature plasma 3.S3, powder body material melt and accelerate ejection spout 10, form film 2 at substrate 1 surface deposition; Spout 10 is 80mm-140mm with the distance of substrate 1.
Airglow discharge low-temperature plasma coating technique of the present invention, the too high meeting of normal atmosphere coating temperature that can effectively solve the existence of plated film field damages the problems such as substrate and complicated process of preparation, can be widely used in the material preparations such as field metallic substance, semiconductor material, compound-material and polymer such as printed electronics, 3D printing.
The above is preferred embodiment of the present invention only, is not that the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away from the technical solution of the present invention scope situation, all can utilize technology contents described above that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention to any change modification, equivalent variations and modification that above embodiment makes, all belongs to the protection domain of the technical program according to technical spirit of the present invention.