CN103035528B - 超级结制备工艺方法 - Google Patents
超级结制备工艺方法 Download PDFInfo
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CN201210163767.7A CN103035528B (zh) | 2012-05-23 | 2012-05-23 | 超级结制备工艺方法 |
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CN103035528A CN103035528A (zh) | 2013-04-10 |
CN103035528B true CN103035528B (zh) | 2015-08-19 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101989552A (zh) * | 2009-08-07 | 2011-03-23 | 上海华虹Nec电子有限公司 | CoolMOS的纵向区的制造方法 |
CN102054701A (zh) * | 2009-10-28 | 2011-05-11 | 上海华虹Nec电子有限公司 | 超接面mos纵向p型区的制作方法 |
CN102231390A (zh) * | 2011-06-17 | 2011-11-02 | 浙江大学 | 一种超结结构的纵向双扩散金属氧化物半导体功率器件 |
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DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
CN102208447B (zh) * | 2011-05-20 | 2013-04-24 | 无锡新洁能股份有限公司 | 一种具有超结结构的半导体器件及其制造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN101989552A (zh) * | 2009-08-07 | 2011-03-23 | 上海华虹Nec电子有限公司 | CoolMOS的纵向区的制造方法 |
CN102054701A (zh) * | 2009-10-28 | 2011-05-11 | 上海华虹Nec电子有限公司 | 超接面mos纵向p型区的制作方法 |
CN102231390A (zh) * | 2011-06-17 | 2011-11-02 | 浙江大学 | 一种超结结构的纵向双扩散金属氧化物半导体功率器件 |
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