CN103022293A - 图形衬底及其制备方法 - Google Patents
图形衬底及其制备方法 Download PDFInfo
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- CN103022293A CN103022293A CN2012105460144A CN201210546014A CN103022293A CN 103022293 A CN103022293 A CN 103022293A CN 2012105460144 A CN2012105460144 A CN 2012105460144A CN 201210546014 A CN201210546014 A CN 201210546014A CN 103022293 A CN103022293 A CN 103022293A
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- 239000000758 substrate Substances 0.000 title claims abstract description 167
- 238000002360 preparation method Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 37
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 15
- 239000010980 sapphire Substances 0.000 claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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CN103022293A true CN103022293A (zh) | 2013-04-03 |
CN103022293B CN103022293B (zh) | 2016-01-27 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943736A (zh) * | 2014-04-24 | 2014-07-23 | 西安神光安瑞光电科技有限公司 | 一种提高外延片亮度的三角锥图形衬底的制备方法 |
CN108091738A (zh) * | 2017-12-14 | 2018-05-29 | 苏州亿拓光电科技有限公司 | 堆叠式图形化的led衬底 |
CN108172670A (zh) * | 2018-01-09 | 2018-06-15 | 福建兆元光电有限公司 | Led外延片衬底结构及制造方法 |
CN108336202A (zh) * | 2017-12-29 | 2018-07-27 | 华灿光电股份有限公司 | 图形化蓝宝石衬底、外延片及其制作方法 |
CN109913944A (zh) * | 2019-02-11 | 2019-06-21 | 张家港迪源电子科技有限公司 | 一种采用pvt法制备电子器件衬底的方法 |
JP2020035860A (ja) * | 2018-08-29 | 2020-03-05 | 固美實国際股▲ふん▼有限公司 | 発光ダイオードに用いるパターン化基板 |
CN112951962A (zh) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | 一种多边内凹型图形化衬底和led外延片 |
CN113517379A (zh) * | 2021-06-30 | 2021-10-19 | 福建晶安光电有限公司 | 一种图形化衬底及其制备方法、led芯片 |
WO2022151045A1 (zh) * | 2021-01-13 | 2022-07-21 | 华为技术有限公司 | 半导体器件及其制作方法、终端设备 |
CN115020565A (zh) * | 2022-06-06 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | 复合图形化衬底的制备方法及具有空气隙的外延结构 |
CN117199208A (zh) * | 2023-08-21 | 2023-12-08 | 广东中图半导体科技股份有限公司 | 侧壁含拐点的复合图形化衬底、制备方法及led外延片 |
Citations (7)
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US20100171094A1 (en) * | 2009-01-05 | 2010-07-08 | Epistar Corporation | Light-emitting semiconductor apparatus |
CN102024898A (zh) * | 2010-11-03 | 2011-04-20 | 西安神光安瑞光电科技有限公司 | 发光二极管及其制造方法 |
CN102064245A (zh) * | 2010-11-12 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | 发光二极管制造方法 |
CN102184846A (zh) * | 2011-04-22 | 2011-09-14 | 东莞市中镓半导体科技有限公司 | 一种图形化衬底的制备方法 |
CN102315097A (zh) * | 2011-09-02 | 2012-01-11 | 华灿光电股份有限公司 | 一种用纳米棒制备的图形化衬底的方法 |
CN102769082A (zh) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | 图形化衬底及其形成方法及用于制作所述衬底的掩膜版 |
CN203013781U (zh) * | 2012-12-17 | 2013-06-19 | 江苏新广联科技股份有限公司 | 图形衬底 |
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2012
- 2012-12-17 CN CN201210546014.4A patent/CN103022293B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100171094A1 (en) * | 2009-01-05 | 2010-07-08 | Epistar Corporation | Light-emitting semiconductor apparatus |
CN102024898A (zh) * | 2010-11-03 | 2011-04-20 | 西安神光安瑞光电科技有限公司 | 发光二极管及其制造方法 |
CN102064245A (zh) * | 2010-11-12 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | 发光二极管制造方法 |
CN102184846A (zh) * | 2011-04-22 | 2011-09-14 | 东莞市中镓半导体科技有限公司 | 一种图形化衬底的制备方法 |
CN102315097A (zh) * | 2011-09-02 | 2012-01-11 | 华灿光电股份有限公司 | 一种用纳米棒制备的图形化衬底的方法 |
CN102769082A (zh) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | 图形化衬底及其形成方法及用于制作所述衬底的掩膜版 |
CN203013781U (zh) * | 2012-12-17 | 2013-06-19 | 江苏新广联科技股份有限公司 | 图形衬底 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943736A (zh) * | 2014-04-24 | 2014-07-23 | 西安神光安瑞光电科技有限公司 | 一种提高外延片亮度的三角锥图形衬底的制备方法 |
CN108091738A (zh) * | 2017-12-14 | 2018-05-29 | 苏州亿拓光电科技有限公司 | 堆叠式图形化的led衬底 |
CN108336202A (zh) * | 2017-12-29 | 2018-07-27 | 华灿光电股份有限公司 | 图形化蓝宝石衬底、外延片及其制作方法 |
CN108172670A (zh) * | 2018-01-09 | 2018-06-15 | 福建兆元光电有限公司 | Led外延片衬底结构及制造方法 |
JP2020035860A (ja) * | 2018-08-29 | 2020-03-05 | 固美實国際股▲ふん▼有限公司 | 発光ダイオードに用いるパターン化基板 |
CN109913944A (zh) * | 2019-02-11 | 2019-06-21 | 张家港迪源电子科技有限公司 | 一种采用pvt法制备电子器件衬底的方法 |
WO2022151045A1 (zh) * | 2021-01-13 | 2022-07-21 | 华为技术有限公司 | 半导体器件及其制作方法、终端设备 |
CN112951962A (zh) * | 2021-01-28 | 2021-06-11 | 广东中图半导体科技股份有限公司 | 一种多边内凹型图形化衬底和led外延片 |
CN113517379A (zh) * | 2021-06-30 | 2021-10-19 | 福建晶安光电有限公司 | 一种图形化衬底及其制备方法、led芯片 |
CN115020565A (zh) * | 2022-06-06 | 2022-09-06 | 淮安澳洋顺昌光电技术有限公司 | 复合图形化衬底的制备方法及具有空气隙的外延结构 |
CN115020565B (zh) * | 2022-06-06 | 2023-10-20 | 淮安澳洋顺昌光电技术有限公司 | 复合图形化衬底的制备方法及具有空气隙的外延结构 |
CN117199208A (zh) * | 2023-08-21 | 2023-12-08 | 广东中图半导体科技股份有限公司 | 侧壁含拐点的复合图形化衬底、制备方法及led外延片 |
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Address after: 261000 west area of the third photoelectric Park, north of Yuqing street, west of Yinfeng Road, high tech Zone, Weifang City, Shandong Province Patentee after: Yuanxu Semiconductor Technology Co.,Ltd. Address before: 261000 west area of the third photoelectric Park, north of Yuqing street, west of Yinfeng Road, high tech Zone, Weifang City, Shandong Province Patentee before: SHANDONG NOVOSHINE OPTOELECTRONICS CO.,LTD. |
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Effective date of registration: 20240618 Address after: Floors 1-3, Sapphire Factory, No. 233-4 Sufu Road, Suxi Town, Yiwu City, Jinhua City, Zhejiang Province, 322000 Patentee after: BOE Huacan Jingtu Technology (Zhejiang) Co.,Ltd. Country or region after: China Address before: 261000 west area of the third photoelectric Park, north of Yuqing street, west of Yinfeng Road, high tech Zone, Weifang City, Shandong Province Patentee before: Yuanxu Semiconductor Technology Co.,Ltd. Country or region before: China |
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