CN103022276A - 一种ac led芯片的制备方法 - Google Patents
一种ac led芯片的制备方法 Download PDFInfo
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- CN103022276A CN103022276A CN2011102880411A CN201110288041A CN103022276A CN 103022276 A CN103022276 A CN 103022276A CN 2011102880411 A CN2011102880411 A CN 2011102880411A CN 201110288041 A CN201110288041 A CN 201110288041A CN 103022276 A CN103022276 A CN 103022276A
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- led chip
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- 238000000034 method Methods 0.000 claims abstract description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 18
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
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- 239000000203 mixture Substances 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
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- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110288041.1A CN103022276B (zh) | 2011-09-26 | 2011-09-26 | 一种ac led芯片的制备方法 |
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CN201110288041.1A CN103022276B (zh) | 2011-09-26 | 2011-09-26 | 一种ac led芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103022276A true CN103022276A (zh) | 2013-04-03 |
CN103022276B CN103022276B (zh) | 2015-08-26 |
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CN201110288041.1A Active CN103022276B (zh) | 2011-09-26 | 2011-09-26 | 一种ac led芯片的制备方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104425663A (zh) * | 2013-08-29 | 2015-03-18 | 无锡华润华晶微电子有限公司 | 一种氮化镓基高压发光二极管的制作方法 |
CN104465691A (zh) * | 2013-09-16 | 2015-03-25 | 上海蓝光科技有限公司 | 一种高压发光二极管结构及其制造方法 |
CN113506844A (zh) * | 2021-09-08 | 2021-10-15 | 深圳市思坦科技有限公司 | 微型led芯片制备方法、微型led芯片、显示装置及发光装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1750277A (zh) * | 2004-09-15 | 2006-03-22 | 财团法人工业技术研究院 | 具有交流回路发光二极管晶粒结构 |
CN1819255A (zh) * | 2005-02-03 | 2006-08-16 | 范朝阳 | 基于微型发光二极管的高压交直流指示灯 |
US7544524B2 (en) * | 2005-05-13 | 2009-06-09 | Industrial Technology Research Institute | Alternating current light-emitting device |
CN101950784A (zh) * | 2010-09-06 | 2011-01-19 | 厦门市三安光电科技有限公司 | 交流发光二极管的制作工艺 |
-
2011
- 2011-09-26 CN CN201110288041.1A patent/CN103022276B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1750277A (zh) * | 2004-09-15 | 2006-03-22 | 财团法人工业技术研究院 | 具有交流回路发光二极管晶粒结构 |
CN1819255A (zh) * | 2005-02-03 | 2006-08-16 | 范朝阳 | 基于微型发光二极管的高压交直流指示灯 |
US7544524B2 (en) * | 2005-05-13 | 2009-06-09 | Industrial Technology Research Institute | Alternating current light-emitting device |
CN101950784A (zh) * | 2010-09-06 | 2011-01-19 | 厦门市三安光电科技有限公司 | 交流发光二极管的制作工艺 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104425663A (zh) * | 2013-08-29 | 2015-03-18 | 无锡华润华晶微电子有限公司 | 一种氮化镓基高压发光二极管的制作方法 |
CN104465691A (zh) * | 2013-09-16 | 2015-03-25 | 上海蓝光科技有限公司 | 一种高压发光二极管结构及其制造方法 |
CN113506844A (zh) * | 2021-09-08 | 2021-10-15 | 深圳市思坦科技有限公司 | 微型led芯片制备方法、微型led芯片、显示装置及发光装置 |
CN113506844B (zh) * | 2021-09-08 | 2022-03-15 | 深圳市思坦科技有限公司 | 微型led芯片制备方法、微型led芯片、显示装置及发光装置 |
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CN103022276B (zh) | 2015-08-26 |
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Effective date of registration: 20191127 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee before: HUIZHOU BYD INDUSTRIAL Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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CP03 | Change of name, title or address | ||
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |