CN103021821A - Metal or semiconductor structure on flexible substrate and annealing method of metal or semiconductor - Google Patents
Metal or semiconductor structure on flexible substrate and annealing method of metal or semiconductor Download PDFInfo
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- CN103021821A CN103021821A CN2012104915496A CN201210491549A CN103021821A CN 103021821 A CN103021821 A CN 103021821A CN 2012104915496 A CN2012104915496 A CN 2012104915496A CN 201210491549 A CN201210491549 A CN 201210491549A CN 103021821 A CN103021821 A CN 103021821A
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Abstract
The invention relates to the technical field of a semiconductor technology, and discloses a metal or semiconductor structure on a flexible substrate and an annealing method of the metal or semiconductor structure. According to the annealing method, the metal or semiconductor structure on the flexible substrate is annealed in a microwave heating manner; as microwave heating has the characteristic of selective heating on a material, when the metal or semiconductor structure on the flexible substrate is annealed, an amorphous silicon layer or a meta layer can be selectively heated, the flexible substrate does not absorb or basically does not absorb microwave energy, and therefore, the flexible substrate is not heated to a very high temperature during microwave annealing, thus the flexible substrate is prevented from being damaged; and the microwave heating can ensure that the interior and the exterior of the heated material are simultaneously heated, and the heating is uniform. Thus, according to the method, the metal or semiconductor structure on the flexible substrate can be annealed, the heating is uniform, and the efficiency of heating energy consumption is high.
Description
Technical field
The present invention relates to the semiconductor process techniques field, particularly be positioned at metal or semiconductor structure and method for annealing thereof on the flexible substrate.
Background technology
Compare with amorphous silicon, the carrier mobility of polysilicon increases 2 orders of magnitude, thereby is widely used in the Thin Film Transistor (TFT) making of (Thin Film Transistor is called for short " TFT ").The preparation method of polysilicon is generally: at first prepare amorphous silicon layer at substrate, annealing obtains polysilicon again.The preparation method of polysilicon can be divided into high temperature preparation and low temperature preparation according to preparation temperature.Because the temperature when high annealing will be above 1000 degree, well-known, under this high temperature, glass substrate or plastic can be softened melting, can't normally use at all.Thereby how to prepare at low temperatures polysilicon and become study hotspot both domestic and external.Compare with traditional high temperature polysilicon, low temperature polycrystalline silicon needs the Ear Mucosa Treated by He Ne Laser Irradiation operation, but what it adopted is that excimer laser is as thermal source, laser is through after the transmissive system, the meeting equally distributed laser beam of produce power also is projeced on the glass substrate of amorphous silicon structures, after the glass substrate of amorphous silicon structures absorbs the energy of excimer laser, will be transformed into polysilicon structure.Because whole processing procedure is to finish below 500-600 degree Celsius, common glass substrate also can bear, and this just greatly reduces manufacturing cost.In recent years, be subject to people's attention at flexible substrate preparation polysilicon, be generally ultra-thin glass or polymeric material as flexible substrate, compare with the device that adopts the preparation of hard substrate material, adopt the device of flexible material preparation to have lightweight, collapsible and not breakable advantage.Such as Chinese patent 200810237489 discloses a kind of method for preparing polysilicon membrane, is to utilize silica flour to be prepared into colloidal sol, uses silk screen printing or spraying process plated film, and by 200 ~ 600 degrees centigrade, annealing obtained polysilicon membrane in 0.1 ~ 3 hour.
Yet, because also there is high temperature resistant not strong shortcoming simultaneously in flexible substrate, and the temperature that adopts in annealing process is still too high, therefore adopt traditional method for annealing, still might damage flexible substrate, as produce gas, steam etc., be not suitable for being positioned at the preparation of the semiconductor structure on the flexible substrate.And, adopt traditional method for annealing operating time long, energy consumption is large.
Summary of the invention
The object of the present invention is to provide a kind of metal or semiconductor structure and method for annealing thereof that is positioned on the flexible substrate, so that when being positioned at the annealing of metal on the flexible substrate or semiconductor structure, optionally only to amorphous silicon layer or metal level heating, and flexible substrate heats and can not absorb or basic microwave energy absorbing not, therefore flexible substrate can not be heated to very high temperature when microwave annealing, thereby has guaranteed that flexible substrate is not destroyed.
For solving the problems of the technologies described above, embodiments of the present invention provide a kind of method for annealing that is positioned at the semiconductor structure on the flexible substrate, comprise following steps:
One flexible substrate is provided;
Prepare amorphous silicon layer in described flexible substrate;
The described flexible substrate that has prepared amorphous silicon layer is placed in the cavity of microwave heating equipment, the described semiconductor structure that is positioned on the flexible substrate is carried out heating anneal; The cavity of described microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.
Embodiments of the present invention also provide a kind of method for annealing that is positioned at the metal structure on the flexible substrate, comprise following steps:
One flexible substrate is provided;
Prepare metal level in described flexible substrate;
The described flexible substrate that has prepared metal level is placed in the cavity of microwave heating equipment, the described metal structure that is positioned on the flexible substrate is carried out heating anneal; The cavity of described microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.
Embodiment of the present invention in terms of existing technologies, adopt microwave heating, the metal or the semiconductor structure that are positioned on the flexible substrate are annealed, because microwave heating has the characteristic of selectivity heating to material, so that when being positioned at the annealing of metal on the flexible substrate or semiconductor structure, optionally only to amorphous silicon layer or metal level heating, and flexible substrate can not absorb or basic microwave energy absorbing not, therefore flexible substrate can not be heated to very high temperature when microwave annealing, thereby has guaranteed that flexible substrate is not destroyed; In addition, microwave heating can make and be heated simultaneously heating inside and outside the material, heat up simultaneously homogeneous heating, therefore, embodiment of the present invention can be finished at low temperatures to being positioned at metal on the flexible substrate or the annealing of semiconductor structure, and homogeneous heating, and the heating energy consumption efficiency is high.
In addition, flexible substrate is placed in the cavity of microwave heating equipment with any bending or any folding mode.Owing to have a selectivity to material-to-be-heated when carrying out microwave heating, therefore when the gross area of substrate is used for the area of supporting surface of placement heated object in greater than microwave cavity, flexible substrate can with any bending or arbitrarily folding mode be placed in the cavity of microwave heating equipment and heat, microwave cavity only can optionally heat amorphous silicon layer or metal level, substantially can directly not heat substrate.Therefore not only avoided in the heating process flexible substrate being damaged, and the area of this flexible substrate can not be subject to the supporting surface area of placing heated object in the microwave cavity, thereby possess widely application scenarios.
In addition, before described flexible substrate preparation amorphous silicon layer or metal level, can also prepare dielectric layer in described flexible substrate; Correspondingly, in the step of described flexible substrate preparation amorphous silicon layer or metal level, the described amorphous silicon layer of preparation or metal level on described dielectric layer.By preparing dielectric layer in flexible substrate, can play cushioning effect, make preparation at the amorphous silicon layer on the dielectric layer or metal level when carrying out microwave heating, heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible.
In addition, the material of described dielectric layer can be silicon dioxide.Because the thermal conductivity of the material that dielectric layer is selected is more low better, can make preparation at the amorphous silicon layer on the dielectric layer or metal level when carrying out microwave heating, therefore heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible, can select the lower material of the conductive coefficient (thermal conductivity) such as silicon dioxide as the dielectric layer material.
Description of drawings
Fig. 1 is the flow chart according to the method for annealing that is positioned at the semiconductor structure on the flexible substrate of first embodiment of the invention;
Fig. 2 is the structural representation of the microwave heating equipment Axom150/Axom300 of De Shitong science and technology (DSG technologies);
Fig. 3 is the flow chart according to the method for annealing that is positioned at the metal structure on the flexible substrate of second embodiment of the invention;
Fig. 4 is the flow chart according to the method for annealing that is positioned at the metal structure on the flexible substrate of third embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing the embodiments of the present invention are explained in detail.Yet, persons of ordinary skill in the art may appreciate that in each execution mode of the present invention, in order to make the reader understand the application better many ins and outs have been proposed.But, even without these ins and outs with based on many variations and the modification of following each execution mode, also can realize each claim of the application technical scheme required for protection.
The first execution mode of the present invention relates to a kind of method for annealing that is positioned at the semiconductor structure on the flexible substrate, and idiographic flow as shown in Figure 1.
Step S101 provides a flexible substrate.Specifically, this flexible substrate can form by material lower by cost and that upper limit serviceability temperature is lower, for example, select ultra-thin glass or organic polymer material as this flexible substrate, wherein organic polymer material includes but not limited to: polyolefin, polyester, PEN, polyimides (polyimide) and fluoropolymer.The upper limit serviceability temperature of substrate is reducible to be equal to or less than temperature when amorphous silicon layer annealed.
Step S102 prepares amorphous silicon layer in flexible substrate.
Because the resistance to elevated temperatures of flexible substrate is not strong, therefore can adopt in the present embodiment at low temperatures and can prepare amorphous silicon layer in the method that flexible substrate prepares amorphous silicon layer, such as, plasma enhanced chemical vapor deposition (PECVD) method, physical vapor deposition (PVD) method or ald (ALD) method etc.
Step S103 is placed on the flexible substrate that has prepared amorphous silicon layer in the cavity of microwave heating equipment, and the semiconductor structure that is positioned on the flexible substrate is carried out heating anneal, obtains polysilicon layer.
When the mode that adopts microwave heating was annealed to being positioned at semiconductor structure on the flexible substrate, the frequency of microwave was between between the 1.5GHz to 20GHz, and the heating duration is 1 to 30 minute.And the cavity of microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.
Specifically, the semiconductor structure of wanting to anneal is put into the microwave cavity of microwave annealing equipment, according to the heated characteristic that is positioned at the semiconductor structure on the flexible substrate, gas pressure, atmosphere kind and density in the control microwave cavity, microwave frequency, microwave mode etc. are carried out microwave annealing.The structural representation of the microwave heating equipment Axom150/Axom300 of De Shitong science and technology (DSG technologies) as shown in Figure 2, when needs are annealed, the semiconductor structure of wanting to anneal is put into the microwave cavity of microwave annealing equipment, after the human-computer interaction interface input control parameter by this equipment, opening device can be finished microwave annealing, and is simple to operate.In addition, what deserves to be explained is, this microwave heating equipment Axom150/Axom300 is when carrying out microwave heating, microwave electromagnetic waves is Gaussian Profile near 5.8GHz, can carry out the multi-frequency heating with the interval of 30Hz-50Hz, simultaneously the microwave at these different frequencies of cavity the inside has the feature of multi-modal (multi-mode) simultaneously, can guarantee like this microwave energy in uniformity and consistency that inside cavity distributes, further causes uniformity and consistency when substrate heated.
In addition, because microwave presents following phenomenon during to the heating of some materials: rise very slow in beginning several seconds temperature to the scope of a few minutes, but after temperature rose to certain value, when continuing heating, temperature can sharply rise, therefore, can also under certain frequency, carry out in ensuing certain hour, not heating after microwave heating a period of time, and then carry out microwave heating, by being interrupted heating, make the material-to-be-heated phenomenon that temperature sharply rises that can not occur.
Microwave is a kind of electromagnetic wave, and microwave heating is that the mode by the object microwave energy absorbing heats object, has obvious different with other heating/heat treatment mode.Common mode of heating generally is to make heat reach material heat from the outside according to heat conduction, convection current and radiation theory, heat always from outward appearance to inner essence transmits and adds thermal material, there is inevitably temperature gradient in the material, so the material of heating is inhomogeneous, cause material local overheating to occur, affect heating technique.Microwave heating is different from traditional heating mode, it is to move by heated object internal dipole molecule high-frequency reciprocating, produce " interior frictional heat " and make and be heated temperature of charge and raise, must any heat transfer process, just can make material inside and outside section heat simultaneously, heat up simultaneously, homogeneous heating only needs the part of energy consumption of traditional heating mode or one of tens parts just can reach the heating purpose.From theory analysis, the amount of heat of the power generation that material absorbs in microwave field and substance classes and, the parameters such as dielectric property, polarization intensity have much relations, namely microwave has the characteristic of selectivity heating to material.Therefore, in the present embodiment, on the one hand when carrying out microwave heating, optionally only amorphous silicon layer is heated, and flexible substrate can not absorb or basic microwave energy absorbing not, therefore flexible substrate can not be heated to very high temperature when microwave annealing, thereby has guaranteed that flexible substrate is not destroyed; On the other hand, microwave heating is a kind of mode of heating of whole heatable substance, the system inside of being heated is heated equably, have the characteristics such as quick, simple, even, efficient, energy-conservation, pollution-free, therefore the method for annealing that present embodiment is provided has homogeneous heating, the high characteristics of heating energy consumption efficiency.
The second execution mode of the present invention relates to a kind of method for annealing that is positioned at the semiconductor structure on the flexible substrate.The second execution mode has been done further improvement on the first execution mode basis, and its improvements mainly are: in second embodiment of the invention, before flexible substrate preparation amorphous silicon layer, can also prepare dielectric layer in flexible substrate; Correspondingly, in the step of flexible substrate preparation amorphous silicon layer, on dielectric layer, prepare amorphous silicon layer, as shown in Figure 3.
Specifically, at first provide a flexible substrate, i.e. execution in step S301.The flexible substrate of using in flexible substrate herein and the first embodiment of the invention is the same, does not repeat them here.
Then, execution in step S302 and S303 prepare dielectric layer and amorphous silicon layer successively on flexible substrate.Specifically, in step S302, prepare dielectric layer in flexible substrate; Dielectric layer can adopt the method preparations such as ald ALD method, physical vapour deposition (PVD) PVD method, chemical vapour deposition (CVD) CVD method herein.
In step S303, prepare amorphous silicon layer at dielectric layer, prepare amorphous silicon layer herein and first embodiment of the invention step S102 is similar, do not repeat them here.
After preparing amorphous silicon layer, the flexible substrate that has prepared dielectric layer and amorphous silicon layer is placed in the cavity of microwave heating equipment, the semiconductor structure that is positioned on the flexible substrate is carried out heating anneal, obtain polysilicon layer, be execution in step S304, the same with the step S103 of first embodiment of the invention, do not repeat them here.
By preparing dielectric layer in flexible substrate, can play cushioning effect, make to prepare at the amorphous silicon layer on the dielectric layer when carrying out microwave heating, heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible.Therefore, the thermal conductivity of the material that dielectric layer is selected is more low better, can make and prepare at the amorphous silicon layer on the dielectric layer when carrying out microwave heating, heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible, in actual applications, can select the lower material of the conductive coefficients (thermal conductivity) such as silicon dioxide as the dielectric layer material.
Third embodiment of the invention relates to a kind of method for annealing that is positioned at the metal structure on the flexible substrate, and as shown in Figure 4, concrete steps are as follows:
Step S401 provides a flexible substrate; The flexible substrate of using in flexible substrate herein and the first embodiment of the invention is the same, does not repeat them here.
Step S402 prepares metal level in flexible substrate;
Because the resistance to elevated temperatures of flexible substrate is not strong; therefore in the present embodiment; can adopt the physical vapor deposition (PVD) method or silver slurry or metallic particles are mixed in the solvent; method by inkjet printing or spin coating etc. prepares metal level at low temperatures, and employed metal can be the common metals such as silver-colored Ag, aluminium Al, golden Au, platinum Pt.
Step S403 is placed on the flexible substrate that has prepared metal level in the cavity of microwave heating equipment, and the metal structure that is positioned on the flexible substrate is carried out heating anneal.
When the mode that adopts microwave heating was annealed to being positioned at metal structure on the flexible substrate, the frequency of microwave was between between the 1.5GHZ to 20GHZ, heating duration 1 to 30 minute.And the cavity of microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.Characteristics according to microwave heating, present embodiment is when carrying out microwave heating, optionally only metal level is heated, and flexible substrate can not absorb or basic microwave energy absorbing not, therefore flexible substrate can not be heated to very high temperature when microwave annealing, thereby guaranteed that flexible substrate is not destroyed, and, homogeneous heating, the high characteristics of heating energy consumption efficiency also had.
In addition, what deserves to be explained is that microwave electromagnetic waves is because the high wavelength of frequency is short, when high conductive material (such as metal) is placed in the microwave field, it is very shallow that microwave penetrates the degree of depth of metal inside, that is to say that the skin depth of metal material in microwave electromagnetic field is usually all smaller.Such as, under the 5.8GHz frequency, the skin depth of copper is 0.85 μ m, and the skin depth of aluminium is 1.08 μ m, and the skin depth of nickel is 1.95 μ m, and the skin depth of gold is 1.03 μ m, and the skin depth of silver is 0.83 μ m, and the skin depth of platinum is 2.15 μ m.When microwave electromagnetic field acts on metal material, the reason such as irregular or microwave field is inhomogeneous owing to metal material surface, and easily cause local high electric field, produce electric spark even may cause the melting of metal surface, so that heating process is out of control, so when adopting microwave heating that the metal structure on the flexible substrate is annealed, need to use multi-frequency, multi-modal microwave, prevent the generation of local high electric field.Therefore, as long as just be positioned at metal structure on the flexible substrate directly place multi-frequency, the multi-modal and uniform microwave heating equipment of microwave field distribution (such as, the microwave heating equipment Axom150/Axom300 of De Shitong science and technology (DSG technologies)) in the cavity, can realize the microwave heating treatment to metal structure.
Four embodiment of the invention relates to a kind of method for annealing that is positioned at the metal structure on the flexible substrate.The 4th execution mode has been done further improvement on the 3rd execution mode basis, and its improvements mainly are: in four embodiment of the invention, before flexible substrate preparation metal level, can also prepare dielectric layer in flexible substrate; Correspondingly, in the step of flexible substrate preparation metal level, on dielectric layer, prepare metal level.
Similar with second embodiment of the invention, by preparing dielectric layer in flexible substrate, can play cushioning effect, make to prepare at the metal level on the dielectric layer when carrying out microwave heating, heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible.Therefore, the thermal conductivity of the material that dielectric layer is selected is more low better, can make and prepare at the metal level on the dielectric layer when carrying out microwave heating, heat is not conducted to the flexible substrate that is positioned under the dielectric layer as far as possible, in actual applications, can select the lower material of the conductive coefficients (thermal conductivity) such as silicon dioxide as the dielectric layer material.
Fifth embodiment of the invention relates to a kind of semiconductor structure on the flexible substrate or method for annealing of metal structure of being positioned at.The 5th execution mode has been done further improvement on the first execution mode, the second execution mode, the 3rd execution mode or the 4th execution mode basis, its improvements mainly are: in fifth embodiment of the invention, the interior flexible substrate of cavity that is placed on microwave heating equipment can be crooked or folding arbitrarily arbitrarily.That is to say, when the gross area of substrate is used for placing the area of supporting surface of heated object in greater than microwave cavity, because substrate is flexible substrate, can be crooked, thus can with heated flexible substrate and on semiconductor structure or metal structure with any bending or arbitrarily folding mode be placed in the cavity of microwave heating equipment and heat.In addition, because microwave heating has a selectivity to material-to-be-heated, so even crooked or fold, microwave cavity also only can optionally heat amorphous silicon layer or metal level, can not heat substrate.Therefore not only avoided in the heating process flexible substrate being damaged, and the area of this flexible substrate can not be subject to the supporting surface area of placing heated object in the microwave cavity, thereby possess widely application scenarios.
The step of top the whole bag of tricks is divided, and just in order to be described clearly, can to merge into a step during realization or some step is split, and is decomposed into a plurality of steps, as long as comprise identical logical relation, all in the protection range of this patent; To adding inessential modification in the algorithm or in the flow process or introduce inessential design, but the core design that does not change its algorithm and flow process is all in the protection range of this patent.
Persons of ordinary skill in the art may appreciate that the respective embodiments described above are to realize specific embodiments of the invention, and in actual applications, can do various changes to it in the form and details, and without departing from the spirit and scope of the present invention.
Claims (18)
1. a method for annealing that is positioned at the semiconductor structure on the flexible substrate is characterized in that, comprises following steps:
One flexible substrate is provided;
Prepare amorphous silicon layer in described flexible substrate;
The described flexible substrate that has prepared amorphous silicon layer is placed in the cavity of microwave heating equipment, the described semiconductor structure that is positioned on the flexible substrate is carried out heating anneal; The cavity of described microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.
2. the method for annealing that is positioned at the semiconductor structure on the flexible substrate according to claim 1 is characterized in that, flexible substrate is placed in the cavity of described microwave heating equipment with any bending or any folding mode.
3. the method for annealing that is positioned at the semiconductor structure on the flexible substrate according to claim 1, it is characterized in that, in the step of described flexible substrate preparation amorphous silicon layer, using plasma strengthens the standby described amorphous silicon layer of chemical vapour deposition (CVD) PECVD method, physical vapour deposition (PVD) PVD method or ald ALD legal system.
4. the method for annealing that is positioned at the semiconductor structure on the flexible substrate according to claim 1 is characterized in that, before described flexible substrate preparation amorphous silicon layer, also comprises following steps:
Prepare dielectric layer in described flexible substrate;
In the step of described flexible substrate preparation amorphous silicon layer, the described amorphous silicon layer of preparation on described dielectric layer.
5. the method for annealing that is positioned at the semiconductor structure on the flexible substrate according to claim 4, it is characterized in that, described in the step of described flexible substrate preparation dielectric layer, adopt the standby described dielectric layer of ald ALD method, physical vapour deposition (PVD) PVD method or chemical vapour deposition (CVD) CVD legal system.
6. the method for annealing that is positioned at the semiconductor structure on the flexible substrate according to claim 4 is characterized in that,
The material of described dielectric layer is silicon dioxide.
7. each described method for annealing that is positioned at the semiconductor structure on the flexible substrate in 6 according to claim 1 is characterized in that,
The frequency of described microwave is between 1.5GHz to 20GHz.
8. each described method for annealing that is positioned at the semiconductor structure on the flexible substrate in 6 according to claim 1 is characterized in that,
Described the described flexible substrate that has prepared amorphous silicon layer is placed in the cavity of microwave heating equipment, the described semiconductor structure that is arranged on the flexible substrate is carried out the step of heating anneal, the heating duration is 1 to 30 minute.
9. each described method for annealing that is positioned at the semiconductor structure on the flexible substrate in 6 according to claim 1 is characterized in that the material of described flexible substrate is ultra-thin glass or organic polymer material.
10. a method for annealing that is positioned at the metal structure on the flexible substrate is characterized in that, comprises following steps:
One flexible substrate is provided;
Prepare metal level in described flexible substrate;
The described flexible substrate that has prepared metal level is placed in the cavity of microwave heating equipment, the described metal structure that is positioned on the flexible substrate is carried out heating anneal; The cavity of described microwave heating equipment contains multi-modal and multifrequency electromagnetic wave when heating.
11. the method for annealing that is positioned at the metal structure on the flexible substrate according to claim 10 is characterized in that, flexible substrate is placed in the cavity of described microwave heating equipment with any bending or any folding mode.
12. the method for annealing that is positioned at the metal structure on the flexible substrate according to claim 10 is characterized in that, in the step of described flexible substrate preparation metal level, adopts the standby described metal level of physical vapour deposition (PVD) PVD legal system;
Perhaps, silver slurry or metallic particles are mixed in the solvent, the method by inkjet printing or spin coating prepares described metal level.
13. the method for annealing that is positioned at the metal structure on the flexible substrate according to claim 10 is characterized in that, before described flexible substrate preparation metal level, also comprises following steps:
Prepare dielectric layer in described flexible substrate;
In the step of described flexible substrate preparation metal level, the described metal level of preparation on described dielectric layer.
14. the method for annealing that is positioned at the metal structure on the flexible substrate according to claim 13, it is characterized in that, described in the step of described flexible substrate preparation dielectric layer, adopt the standby described dielectric layer of ald ALD method, physical vapour deposition (PVD) PVD method or chemical vapour deposition (CVD) CVD legal system.
15. the method for annealing that is positioned at the metal structure on the flexible substrate according to claim 13 is characterized in that,
The material of described dielectric layer is silicon dioxide.
16. each described method for annealing that is positioned at the metal structure on the flexible substrate in 15 is characterized in that according to claim 10,
The frequency of described microwave is between 1.5GHz to 20GHz.
17. each described method for annealing that is positioned at the metal structure on the flexible substrate in 15 is characterized in that according to claim 10,
Described the described flexible substrate that has prepared metal level is placed in the cavity of microwave heating equipment, to the step that the described semiconductor structure that is arranged on the flexible substrate is annealed, the heating duration is 1 to 30 minute.
18. each described method for annealing that is positioned at the metal structure on the flexible substrate in 15 is characterized in that the material of described flexible substrate is ultra-thin glass or organic polymer material according to claim 10.
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