CN103018288A - Controllable heating and defrosting capacitive type high-altitude humidity sensor and manufacturing method thereof - Google Patents
Controllable heating and defrosting capacitive type high-altitude humidity sensor and manufacturing method thereof Download PDFInfo
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- CN103018288A CN103018288A CN2012105518164A CN201210551816A CN103018288A CN 103018288 A CN103018288 A CN 103018288A CN 2012105518164 A CN2012105518164 A CN 2012105518164A CN 201210551816 A CN201210551816 A CN 201210551816A CN 103018288 A CN103018288 A CN 103018288A
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Abstract
The invention discloses a controllable heating and defrosting capacitive type high-altitude humidity sensor and a manufacturing method thereof, relates to the field of high-altitude humidity sensors and the manufacturing method thereof, and solves the problem that the humidity data acquisition operation is seriously influenced as the surface of the conventional humidity sensor is frosted due to excessively low temperature in a high-altitude environment. The high-altitude humidity sensor is characterized by comprising a base, a first insulation layer, a first temperature sensor bonding pad, a second temperature sensor bonding pad, a first heater bonding pad, a second heater bonding pad, a temperature sensor electrode, a heater electrode, a second insulation layer, a lower electrode, a humidity sensing layer, an upper porous electrode and a groove. The manufacturing method comprises the steps as follows: manufacturing the high-altitude humidity sensor by adopting the methods of photo-etching stripping, magnetic control radio-frequency sputtering, corrosion hollowing, spin coating and evaporation coating. The high-altitude humidity sensor is suitable for the fields of climate and weather.
Description
Technical field
The present invention relates to the field of high-altitude humidity sensor and preparation method thereof.
Background technology
The change of weather and people's productive life are closely related, and directly affect people and are engaged in the activities such as productive labor, communications and transportation, Aero-Space.And the humidity in the atmosphere is one of main climate parameter.Development along with science and technology, people improve constantly the demand of atmospheric humidity sounding, requirement is to obtaining accurately and rapidly the high-altitude humidity data, but, the high altitude environment climate variability, environment is abominable, simultaneously since under the high altitude environment because temperature excessively low (minimum reaching-75 ℃), so that existing humidity sensor is when being applied in the high altitude environment, frost appears in sensor surface, has a strong impact on the humidity data collection.
The objective of the invention is to introduce a kind of manufacture method of controlled heating defrosting condenser type aerological sounding humidity sensor, to solve under the high altitude environment because temperature excessively low (minimum-75 ℃) produces humidity sensor surface frost, have a strong impact on the problem that humidity data gathers, satisfy the demand that quick and precisely obtains temperature aloft, humidity data.
Summary of the invention
The present invention will solve existing humidity sensor because temperature excessively low (minimum reaching-75 ℃) under the high altitude environment, so that frost appears in sensor surface, have a strong impact on the problem that humidity data gathers, and a kind of controlled heating defrosting condenser type high-altitude humidity sensor and preparation method thereof is provided.
A kind of controlled heating defrosting condenser type high-altitude humidity sensor comprises substrate, the first insulation course, the first temperature sensor pad, the second temperature sensor pad, primary heater pad, secondary heater pad, temperature sensor electrode, heater electrode, the second insulation course, bottom electrode, humidity sensing layer, porous top electrode and groove; Wherein, the upper surface of substrate is laid the first insulation course; Upper surface at the first insulation course is provided with temperature sensor electrode and heater electrode, and be connected with the first temperature sensor pad and the second temperature sensor pad at the two ends of temperature sensor electrode, be connected with primary heater pad and secondary heater pad at the two ends of heater electrode; Described the second insulation course is laid on the first temperature and passes on temperature sensor electrode and the heater electrode, and exposes the first temperature sensor pad, the second temperature sensor pad, primary heater pad and secondary heater pad; Described bottom electrode is comprised of bottom electrode first, bottom electrode second portion, bottom electrode third part, bottom electrode the 4th part, bottom electrode the 5th part, bottom electrode the 6th part, the first capacitance electrode pad and the second capacitance electrode pad; Bottom electrode first, the bottom electrode second portion, the bottom electrode third part, bottom electrode the 4th part, bottom electrode the 5th part does not link to each other mutually with bottom electrode the 6th part, bottom electrode first covers the first temperature sensor pad fully and is attached thereto and connects, the bottom electrode second portion covers the second temperature sensor pad fully and is attached thereto and connects, the bottom electrode third part is laid on the second insulation course and covers the relevant position of temperature sensor electrode, bottom electrode the 4th part covers on the primary heater pad fully and is attached thereto and connects, bottom electrode the 5th part covers the secondary heater pad fully and is attached thereto and connects, the relevant position of bottom electrode the 6th partial coverage heater electrode, be communicated with the first capacitance electrode pad in the bottom electrode third part, be communicated with the second capacitance electrode pad in bottom electrode the 6th part; Described humidity sensing layer is laid on the space and bottom electrode third part between bottom electrode third part and bottom electrode the 6th part, and exposes the first capacitance electrode pad and the second capacitance electrode pad; Described porous top electrode is laid on humidity sensing layer and bottom electrode the 6th part; The lower surface of described substrate is provided with the groove that forms after hollow out.
Principle of work: when controlled heating defrosting condenser type high-altitude humidity sensor touches water in air, because airborne liquid water content changes, hydrone is penetrated in the humidity-sensitive film by the porous top electrode, the specific inductive capacity of humidity-sensitive film changes, thereby so that the capacitance of the dull and stereotyped sandwich electric capacity that porous top electrode, humidity-sensitive film and bottom electrode three form changes, just can draw corresponding ambient humidity through processing of circuit.Because under high altitude environment, temperature excessively low (minimum reaching-75 ℃) so that frost appears in sensor surface, heats humidity sensor by heater electrode, removes frost, and then has reached the purpose of controlled heating defrosting.
The preparation method of a kind of controlled heating defrosting condenser type high-altitude humidity sensor, specifically finish according to the following steps:
One, prepare the crystal orientation for the thickness of [100] be the silicon chip of 150 μ m ~ 250 μ m as substrate, the surface of clean substrate;
Two, the surface of oxidized silicon chip obtains the SiO of one deck densification on the surface of silicon chip
2Layer, i.e. the first insulation course;
Three, adopt lithography stripping method preparation temperature sensor electrode and heater electrode on the upper surface of the substrate that step 2 is processed, with the two ends of temperature sensor electrode respectively with the first temperature sensor pad be connected the temperature sensor pad and be connected; The two ends of heater electrode are connected with the secondary heater pad with the primary heater pad respectively; Wherein, the resistance of described temperature sensor electrode is 100 Ω～200 Ω, and the resistance of described heater electrode is 30 Ω～50 Ω;
Four, the method that adopts photoetching and magnetic control radio-frequency sputtering to combine prepares the second insulation course at the upper surface of the substrate of step 3 processing; Wherein, described the second insulation course preparation passes on temperature sensor electrode and the heater electrode in the first temperature, and exposes the first temperature sensor pad, the second temperature sensor pad, primary heater pad and secondary heater pad;
Five, adopt the lithography stripping method to prepare bottom electrode at the upper surface of the substrate of step 4 processing; Wherein, described bottom electrode is comprised of bottom electrode first, bottom electrode second portion, bottom electrode third part, bottom electrode the 4th part, bottom electrode the 5th part, bottom electrode the 6th part, the first capacitance electrode pad and the second capacitance electrode pad; In the first temperature sensor pad preparation bottom electrode first, at the second temperature sensor pad preparation bottom electrode second portion, prepare the bottom electrode third part at the second insulation course with temperature sensor electrode relevant position, in primary heater pad preparation bottom electrode the 4th part, in secondary heater pad preparation bottom electrode the 5th part, prepare bottom electrode the 6th part at the second insulation course with the heater electrode relevant position, the bottom electrode third part is communicated with the first capacitance electrode pad, and electrode the 6th part is communicated with the second capacitance electrode pad;
Six, the method for employing corrosion hollowed-out is carried out hollow out to the lower surface of the substrate of step 5 processing, obtains the groove for the thermal capacity that reduces substrate;
Seven, adopt even glue heat-treating methods to prepare humidity-sensitive film at the upper surface of the substrate of step 6 processing, namely obtain humidity sensing layer; Described humidity-sensitive film preparation is on the space and bottom electrode third part between bottom electrode third part and bottom electrode the 6th part;
Eight, adopt the method for evaporation coating at the upper surface preparation porous top electrode of the substrate of processing in step 7; Described porous top electrode preparation is on humidity sensing layer and bottom electrode the 6th part.
Advantage of the present invention: a kind of controlled heating defrosting condenser type high-altitude humidity sensor for preparing by preparation method provided by the invention, owing to added temperature sensing device and heating arrangement, in the high-level low temperature environment, by the induction to temperature, and heat compensation, so that humidity sensor can independently defrost, improved the degree of accuracy of moisture measurement.
Description of drawings
Fig. 1 is the construction diagrams of a kind of controlled heating defrosting condenser type of the present invention high-altitude humidity sensor.
Fig. 2 is the synoptic diagram of a kind of controlled heating defrosting condenser type of the present invention high-altitude humidity sensor.
Fig. 3 is the A-A sectional view of Fig. 2.
Fig. 4 is the schematic bottom view of Fig. 2.
Fig. 5 is the heater electrode of a kind of controlled heating defrosting condenser type of the present invention high-altitude humidity sensor and the synoptic diagram of temperature sensor electrode.
Embodiment
Embodiment one: in conjunction with Fig. 1, Fig. 2, Fig. 3 and Fig. 4, present embodiment is a kind of controlled heating defrosting condenser type high-altitude humidity sensor, comprises substrate 1, the first insulation course 2, the first temperature sensor pad 3, the second temperature sensor pad 4, primary heater pad 5, secondary heater pad 6, temperature sensor electrode 7, heater electrode 8, the second insulation course 9, bottom electrode 10, humidity sensing layer 11, porous top electrode 12 and groove 13; Wherein, the upper surface of substrate 1 is laid the first insulation course 2; Upper surface at the first insulation course 2 is provided with temperature sensor electrode 7 and heater electrode 8, and be connected with the first temperature sensor pad 3 and the second temperature sensor pad 4 at the two ends of temperature sensor electrode 7, be connected with primary heater pad 5 and secondary heater pad 6 at the two ends of heater electrode 8;
Described the second insulation course 9 is laid on the first temperature and passes on temperature sensor electrode 7 and the heater electrode 8, and exposes the first temperature sensor pad 3, the second temperature sensor pad 4, primary heater pad 5 and secondary heater pad 6;
Described bottom electrode 10 is comprised of the 10-1 of bottom electrode first, bottom electrode second portion 10-2, bottom electrode third part 10-3, bottom electrode the 4th part 10-4, bottom electrode the 5th part 10-5, bottom electrode the 6th part 10-6, the first capacitance electrode pad 10-7 and the second capacitance electrode pad 10-8; The 10-1 of bottom electrode first, bottom electrode second portion 10-2, bottom electrode third part 10-3, bottom electrode the 4th part 10-4, bottom electrode the 5th part 10-5 does not link to each other mutually with bottom electrode the 6th part 10-6, the 10-1 of bottom electrode first covers the first temperature sensor pad 3 fully and is attached thereto and connects, bottom electrode second portion 10-2 covers the second temperature sensor pad 4 fully and is attached thereto and connects, bottom electrode third part 10-3 is laid on the second insulation course 9 and covers the relevant position of temperature sensor electrode 7, bottom electrode the 4th part 10-4 covers on the primary heater pad 5 fully and is attached thereto and connects, bottom electrode the 5th part 10-5 covers secondary heater pad 6 fully and is attached thereto and connects, bottom electrode the 6th part 10-6 covers the relevant position of heater electrode 8, be communicated with the first capacitance electrode pad 10-7 at bottom electrode third part 10-3, be communicated with the second capacitance electrode pad 10-8 at bottom electrode the 6th part 10-6;
Described humidity sensing layer 11 is laid on the space and bottom electrode third part 10-3 between bottom electrode third part 10-3 and bottom electrode the 6th part 10-6, and exposes the first capacitance electrode pad 10-7 and the second capacitance electrode pad 10-8;
Described porous top electrode 12 is laid on humidity sensing layer 11 and bottom electrode the 6th part 10-6;
The lower surface of described substrate 1 is provided with the groove 13 that forms after hollow out.
The lower surface of the described substrate 1 of present embodiment is provided with the groove 13 that forms after hollow out be for the thermal capacity that reduces substrate 1.
The principle of work of a kind of controlled heating defrosting condenser type high-altitude humidity sensor that present embodiment provides: when controlled heating defrosting condenser type high-altitude humidity sensor touches water in air, because airborne liquid water content changes, hydrone is penetrated in the humidity-sensitive film by the porous top electrode, the specific inductive capacity of humidity-sensitive film changes, thereby so that the capacitance of the dull and stereotyped sandwich electric capacity that porous top electrode, humidity-sensitive film and bottom electrode three form changes, just can draw corresponding ambient humidity through processing of circuit.Because under high altitude environment, temperature excessively low (minimum reaching-75 ℃) so that frost appears in sensor surface, heats humidity sensor by heater electrode, removes frost, and then has reached the purpose of controlled heating defrosting.
The advantage of a kind of controlled heating defrosting condenser type high-altitude humidity sensor that present embodiment provides: owing to added temperature sensing device and heating arrangement, in the high-level low temperature environment, by the induction to temperature, and heat compensation, so that humidity sensor can independently defrost, improved the degree of accuracy of moisture measurement.
Embodiment two: present embodiment is the preparation method of a kind of controlled heating defrosting condenser type high-altitude humidity sensor, specifically finishes according to the following steps:
One, prepare the crystal orientation for the thickness of [100] be the silicon chip of 150 μ m ~ 250 μ m as substrate 1, the surface of clean substrate 1;
Two, the surface of oxidized silicon chip obtains the SiO of one deck densification on the surface of silicon chip
2Layer, i.e. the first insulation course 2;
Three, adopt lithography stripping method preparation temperature sensor electrode 7 and heater electrode 8 on the upper surface of the substrate that step 2 is processed, with the two ends of temperature sensor electrode 7 respectively with the first temperature sensor pad 3 be connected temperature sensor pad 4 and be connected; The two ends of heater electrode 8 are connected with the secondary heater pad with primary heater pad 5 respectively are connected; Wherein, the resistance of described temperature sensor electrode is 100 Ω ~ 200 Ω, and the resistance of described heater electrode is 30 Ω ~ 50 Ω;
Four, the method that adopts photoetching and magnetic control radio-frequency sputtering to combine prepares the second insulation course 9 at the upper surface of the substrate of step 3 processing; Wherein, 9 preparations of described the second insulation course pass on temperature sensor electrode 7 and the heater electrode 8 in the first temperature, and expose the first temperature sensor pad 3, the second temperature sensor pad 4, primary heater pad 5 and secondary heater pad 6;
Five, adopt the lithography stripping method at the upper surface preparation bottom electrode 10 of the substrate of step 4 processing; Wherein, described bottom electrode 10 is comprised of the 10-1 of bottom electrode first, bottom electrode second portion 10-2, bottom electrode third part 10-3, bottom electrode the 4th part 10-4, bottom electrode the 5th part 10-5, bottom electrode the 6th part 10-6, the first capacitance electrode pad 10-7 and the second capacitance electrode pad 10-8; At the first temperature sensor pad 3 preparation bottom electrode 10-1 of first, at the second temperature sensor pad 4 preparation bottom electrode second portion 10-2, prepare bottom electrode third part 10-3 at the second insulation course 9 with temperature sensor electrode 7 relevant positions, at primary heater pad 5 preparation bottom electrodes the 4th part 10-4, at secondary heater pad 6 preparation bottom electrodes the 5th part 10-5, prepare bottom electrode the 6th part 10-6 at the second insulation course with heater electrode 8 relevant positions, bottom electrode third part 10-3 is communicated with the first capacitance electrode pad 10-7, and bottom electrode the 6th part 10-6 is communicated with the second capacitance electrode pad 10-8;
Six, the method for employing corrosion hollowed-out is carried out hollow out to the lower surface of the substrate of step 5 processing, obtains the groove 13 for the thermal capacity that reduces substrate 1;
Seven, adopt even glue heat-treating methods to prepare humidity-sensitive film at the upper surface of the substrate of step 6 processing, namely obtain humidity sensing layer 11; Described humidity-sensitive film preparation is on the space and bottom electrode third part 10-3 between bottom electrode third part 10-3 and bottom electrode the 6th part 10-6;
Eight, adopt the method for evaporation coating at the upper surface preparation porous top electrode 12 of the substrate of processing in step 7; Described porous top electrode 12 preparations are on humidity sensing layer 11 and bottom electrode the 6th part 10-6.
The preparation method's of a kind of controlled heating defrosting condenser type high-altitude humidity sensor that present embodiment provides advantage: a kind of controlled heating defrosting condenser type high-altitude humidity sensor that the preparation method who provides by present embodiment prepares, owing to added temperature sensing device and heating arrangement, in the high-level low temperature environment, by the induction to temperature, and heat compensation, so that humidity sensor can independently defrost, improved the degree of accuracy of moisture measurement.
Embodiment three: the difference of present embodiment and embodiment two is that the thickness of described the first insulation course 2 is 500nm ~ 1000nm.Other is identical with embodiment two.
Embodiment four: present embodiment and embodiment two or threes' difference is that the lithography stripping method in the described step 3 is specifically finished according to the following steps:
A, prepare the mask take the figure of thermode and thermometric electrode as the hollow out figure;
B, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 is processed, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
C, plated film: the method plated film on the upper surface of the substrate of processing through step b that adopts magnetron sputtering; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% platinum, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts d.c. sputtering, and sputtering power is 32W ~ 60W, and the time is 15min ~ 20min, and during plated film, pressure is controlled at below the 0.5Pa;
D, metal film are peeled off: will soak in the substrate acetone that step c processes, dissolving photoresist, and ultrasonic clear to metal pattern has namely been finished the lithography stripping method of step 3.Other are identical with embodiment two or three.
Embodiment five: the difference of one of present embodiment and embodiment two to four is that the method that photoetching and magnetic control radio-frequency sputtering combine in the described step 4 is specifically finished according to the following steps:
E, prepare the mask plate take the pattern of pad as figure;
F, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 processes, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min, the mask that step e is prepared covers on the upper surface of substrate, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
G, employing magnetic control radio-frequency (RF) sputtering method prepare Al at the upper surface of the substrate of processing through step f
2O
3Insulation course namely obtains the second insulation course 9; Wherein, described magnetic control radio-frequency sputtering prepares Al
2O
3The method of insulation course is that radio-frequency sputtering forms Al
2O
3Method or reactive sputtering form Al
2O
3Method;
Described radio-frequency sputtering forms Al
2O
3Method is: vacuum tightness reaches 1 * 10
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts radio-frequency sputtering, and sputtering power is 60W ~ 80W, and the time is 120min ~ 180min, and during plated film, pressure is controlled at below the 0.5Pa;
Described reactive sputtering forms Al
2O
3Method is: vacuum tightness reaches 1 * 10
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 20ml/min, ar pressure is 1.5Pa ~ 2Pa, and the flow of oxygen is 1.5 ~ 2ml/min, adopts the method for d.c. sputtering or radio-frequency sputtering, sputtering power is 40W ~ 65W, time is 100min ~ 120min, and during plated film, pressure is controlled at below the 0.5Pa.Other are identical with embodiment two to four.
Embodiment six: the difference of one of present embodiment and embodiment two to five is that the lithography stripping method in the described step 5 is specifically finished according to the following steps:
H, metal film are peeled off: will put into acetone through the substrate that step 4 is processed and soak, the dissolving photoresist peels off welding disking area Al
2O
3Insulation course;
I, plated film: adopt the method for magnetron sputtering to carry out plated film at the upper surface of the substrate of processing through step h; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% gold, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts d.c. sputtering, and sputtering power is 32W ~ 60W, and the time is 15min ~ 20min, and during plated film, pressure is controlled at below the 0.5Pa;
The mask plate of j, preparation bottom electrode pattern, photoresist is evenly coated in the upper surface of the substrate of processing through step I, the mask plate of bottom electrode pattern is covered on the relevant position on photoresist surface, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min; The golden film that will expose adopts iodine and iodate ammonia saturated solution to erode, and obtains bottom electrode 10.Other is identical with embodiment two to five.
Embodiment seven: the difference of one of present embodiment and embodiment two to six is that the method for the corrosion hollowed-out in the described step 6 is specifically finished according to the following steps:
K, upper surface and the lower surface of the substrate processed through step 5 are coated respectively photoresist, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min;
L, preparation are take upper surface of substrate as the mask of plate-making figure with take the mask of hollow out figure as the plate-making figure, mask take upper surface of substrate as the plate-making figure is covered on the upper surface of the substrate of processing through step k, mask take the hollow out figure as the plate-making figure is covered on the relevant position of the lower surface of substrate, double-sided exposure 15s ~ 30s, developer solution 20s ~ the 40s that develops is put in the good substrate of exposure, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
M, under 70 ℃ ~ 90 ℃ temperature, adopting massfraction is that 35% ~ 40% potassium hydroxide solution carries out corrosion hollowed-out to the substrate of processing through step l, forms groove 13.Other is identical with embodiment two to six.
Embodiment eight: the difference of one of present embodiment and embodiment two to seven is that the even glue heat-treating methods in the described step 7 is specifically finished according to the following steps:
N, in tetrahydrofuran, add methyl vinyl silicone rubber, mix, be heated to 50 ℃ ~ 60 ℃ so that fully dissolving, obtain massfraction and be 30% ~ 60% silicone rubber solution; In the silicone rubber solution that obtains, add polyamic acid, ultrasonic to being uniformly dispersed, obtain feeling wet solution; Wherein, the mass ratio of polyamic acid and methyl vinyl silicone rubber is (0.5 ~ 1.5): 1;
O, the wet solution of sense that step n is obtained are coated on the upper surface of the substrate that the step 6 processing obtains, then at 80 ℃ ~ 100 ℃ lower constant temperature 5min ~ 10min;
P, preparation humidity-sensitive film pattern are the mask plate of plate-making figure, cover and processing through step o on the upper surface of the substrate that obtains, exposure 15s ~ 30s, then at N, 20s ~ 40s develops in the N-dimethyl acetamide, then rinsing 20s ~ 30s in deionized water at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min, namely obtains humidity sensing layer 11.Other is identical with embodiment two to seven.
Embodiment nine: the difference of one of present embodiment and embodiment two to eight is that the thickness of described humidity sensing layer 11 is 1 μ m ~ 10 μ m.Other is identical with embodiment two to eight.
Embodiment ten: the difference of one of present embodiment and embodiment two to seven is, the method of the evaporation coating in the described step 8, specifically finish according to the following steps: adopt goldleaf as evaporation source material, adopting porous top electrode pattern is template for the mask plate of plate-making figure, film forming in the evaporation coating machine, evaporation current 110A ~ 120A, evaporation time 5s ~ 10s namely obtains porous top electrode 12.Other is identical with embodiment two to nine.
Adopt following verification experimental verification effect of the present invention:
Test one: the preparation method of a kind of controlled heating defrosting condenser type high-altitude humidity sensor, specifically finish according to the following steps:
One, prepare the crystal orientation for the thickness of [100] be the silicon chip of 200 μ m as substrate 1, the surface of clean substrate 1;
Two, the surface of oxidized silicon chip obtains the SiO of one deck densification on the surface of silicon chip
2Layer, i.e. the first insulation course 2;
Three, adopt lithography stripping method preparation temperature sensor electrode 7 and heater electrode 8 on the upper surface of the substrate that step 2 is processed, with the two ends of temperature sensor electrode 7 respectively with the first temperature sensor pad 3 be connected temperature sensor pad 4 and be connected; The two ends of heater electrode 8 are connected with the secondary heater pad with primary heater pad 5 respectively are connected; Wherein, the resistance of described temperature sensor electrode 7 is 200 Ω, and the resistance of described heater electrode 8 is 50 Ω; Adopt lithography stripping method preparation temperature sensor electrode 7 and heater electrode 8 on the upper surface of the substrate that step 2 is processed, specifically finish according to the following steps:
A, prepare the mask take the figure of thermode and thermometric electrode as the hollow out figure;
B, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 is processed, then at 100 ℃ of lower baking 20min, behind the exposure 20s, is transferred to the 30s that develops in the developer solution, rinsing 20s in deionized water, then, at 120 ℃ of lower post bake 30min;
C, plated film: the method plated film on the upper surface of the substrate of processing through step b that adopts magnetron sputtering; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% platinum, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min, and ar pressure is 2.5Pa, adopts d.c. sputtering, and sputtering power is 45W, and the time is 20min, and during plated film, pressure is no more than 0.5Pa;
D, metal film are peeled off: will in the substrate acetone that step c processes, soak, and the dissolving photoresist, and ultrasonic clear to metal pattern.
Four, the method that adopts photoetching and magnetic control radio-frequency sputtering to combine prepares the second insulation course 9 at the upper surface of the substrate of step 3 processing; Wherein, 9 preparations of described the second insulation course pass on temperature sensor electrode 7 and the heater electrode 8 in the first temperature, and expose the first temperature sensor pad 3, the second temperature sensor pad 4, primary heater pad 5 and secondary heater pad 6; The method that adopts photoetching and magnetic control radio-frequency sputtering to combine prepares the second insulation course 9 at the upper surface of the substrate of step 3 processing, specifically finishes according to the following steps:
E, prepare the mask plate take the pattern of pad as figure;
F, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 processes, then at 100 ℃ of lower baking 40min, the mask that step e is prepared covers on the upper surface of substrate, behind the exposure 30s, be transferred to the 40s that develops in the developer solution, rinsing 30s in deionized water, then, at 120 ℃ of lower post bake 30min;
G, employing magnetic control radio-frequency (RF) sputtering method prepare Al at the upper surface of the substrate of processing through step f
2O
3Insulation course namely obtains the second insulation course 9; Wherein, described radio-frequency sputtering forms Al
2O
3Method is: vacuum tightness reaches 1 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min, and ar pressure is 2.5Pa, adopts radio-frequency sputtering, and sputtering power is 70W, and the time is 180min, and during plated film, pressure is no more than 0.5Pa;
Five, adopt the lithography stripping method at the upper surface preparation bottom electrode 10 of the substrate of step 4 processing; Wherein, described bottom electrode 10 is comprised of the 10-1 of bottom electrode first, bottom electrode second portion 10-2, bottom electrode third part 10-3, bottom electrode the 4th part 10-4, bottom electrode the 5th part 10-5, bottom electrode the 6th part 10-6, the first capacitance electrode pad 10-7 and the second capacitance electrode pad 10-8; At the first temperature sensor pad 3 preparation bottom electrode 10-1 of first, at the second temperature sensor pad 4 preparation bottom electrode second portion 10-2, prepare bottom electrode third part 10-3 at the second insulation course 9 with temperature sensor electrode 7 relevant positions, at primary heater pad 5 preparation bottom electrodes the 4th part 10-4, at secondary heater pad 6 preparation bottom electrodes the 5th part 10-5, prepare bottom electrode the 6th part 10-6 at the second insulation course with heater electrode 8 relevant positions, bottom electrode third part 10-3 is communicated with the first capacitance electrode pad 10-7, and bottom electrode the 6th part 10-6 is communicated with the second capacitance electrode pad 10-8; Adopt the lithography stripping method at the upper surface preparation bottom electrode 10 of the substrate of step 4 processing, specifically finish according to the following steps:
H, metal film are peeled off: will put into acetone through the substrate that step 4 is processed and soak, the dissolving photoresist peels off welding disking area Al
2O
3Insulation course;
I, plated film: adopt the method for magnetron sputtering to carry out plated film at the upper surface of the substrate of processing through step h; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% gold, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min, and ar pressure 2.5Pa adopts d.c. sputtering, and sputtering power is 45W, and the time is 20min, and during plated film, pressure is no more than 0.5Pa;
The mask plate of j, preparation bottom electrode pattern, photoresist is evenly coated in the upper surface of the substrate of processing through step I, the mask plate of bottom electrode pattern is covered on the relevant position on photoresist surface, behind the exposure 30s, be transferred to the 40s that develops in the developer solution, rinsing 30s in deionized water, then, at 120 ℃ of lower post bake 30min; The golden film that will expose adopts iodine and iodate ammonia saturated solution to erode, and obtains bottom electrode 10.
Six, the method for employing corrosion hollowed-out is carried out hollow out to the lower surface of the substrate of step 5 processing, obtains the groove 13 for the thermal capacity that reduces substrate 1, specifically finishes according to the following steps:
K, upper surface and the lower surface of the substrate processed through step 5 are coated respectively photoresist, then at 100 ℃ of lower baking 20min;
L, preparation are take upper surface of substrate as the mask of plate-making figure with take the mask of hollow out figure as the plate-making figure, mask take upper surface of substrate as the plate-making figure is covered on the upper surface of the substrate of processing through step k, mask take the hollow out figure as the plate-making figure is covered on the relevant position of the lower surface of substrate, double-sided exposure 30s, the developer solution 40s that develops is put in the good substrate of exposure, rinsing 30s in deionized water, then, at 120 ℃ of lower post bake 30min;
M, under 90 ℃ temperature, adopting massfraction is that 35% potassium hydroxide solution carries out corrosion hollowed-out to the substrate of processing through step l, forms groove 13.
Seven, adopt even glue heat-treating methods to prepare humidity-sensitive film at the upper surface of the substrate of step 6 processing, namely obtain humidity sensing layer 11; Described humidity-sensitive film preparation is on the space and bottom electrode third part 10-3 between bottom electrode third part 10-3 and bottom electrode the 6th part 10-6; Adopt even glue heat-treating methods to prepare humidity-sensitive film at the upper surface of the substrate of step 6 processing, specifically finish according to the following steps:
N, in tetrahydrofuran, add methyl vinyl silicone rubber, mix, be heated to 60 ℃ so that fully dissolving, obtain massfraction and be 30% silicone rubber solution; In the silicone rubber solution that obtains, add polyamic acid, ultrasonic to being uniformly dispersed, obtain feeling wet solution; Wherein, the mass ratio of polyamic acid and methyl vinyl silicone rubber is 1:1;
O, the wet solution of sense that step n is obtained are coated on the upper surface of the substrate that the step 6 processing obtains, then at 100 ℃ of lower constant temperature 5min;
P, preparation humidity-sensitive film pattern are the mask plate of plate-making figure, cover and are processing on the upper surface of the substrate that obtains exposure 30s through step o, then the 240s that in DMA, develops, rinsing 30s in deionized water, then at 120 ℃ of lower post bake 30min, namely obtain humidity sensing layer 11.
Eight, adopt goldleaf as evaporation source material, adopting porous top electrode pattern is template for the mask plate of plate-making figure, film forming in the evaporation coating machine, evaporation current 110A ~ 120A, evaporation time 5s ~ 10s, obtain porous top electrode 12, namely finished the preparation of controlled heating defrosting condenser type high-altitude humidity sensor; Wherein, described porous top electrode 12 preparations are on humidity sensing layer 11 and bottom electrode the 6th part 10-6.
Claims (10)
1. controlled heating defrosting condenser type high-altitude humidity sensor, it is characterized in that: it is comprised of substrate (1), the first insulation course (2), the first temperature sensor pad (3), the second temperature sensor pad (4), primary heater pad (5), secondary heater pad (6), temperature sensor electrode (7), heater electrode (8), the second insulation course (9), bottom electrode (10), humidity sensing layer (11), porous top electrode (12) and groove (13); The upper surface of wherein, substrate (1) is laid the first insulation course (2); Upper surface at the first insulation course (2) is provided with temperature sensor electrode (7) and heater electrode (8), and be connected with the first temperature sensor pad (3) and the second temperature sensor pad (4) at the two ends of temperature sensor electrode (7), be connected with primary heater pad (5) and secondary heater pad (6) at the two ends of heater electrode (8); Described the second insulation course (9) is laid on the first temperature and passes on temperature sensor electrode (7) and the heater electrode (8), and exposes the first temperature sensor pad (3), the second temperature sensor pad (4), primary heater pad (5) and secondary heater pad (6); Described bottom electrode (10) is comprised of bottom electrode first (10-1), bottom electrode second portion (10-2), bottom electrode third part (10-3), bottom electrode the 4th part (10-4), bottom electrode the 5th part (10-5), bottom electrode the 6th part (10-6), the first capacitance electrode pad (10-7) and the second capacitance electrode pad (10-8); Bottom electrode first (10-1), bottom electrode second portion (10-2), bottom electrode third part (10-3), bottom electrode the 4th part (10-4), bottom electrode the 5th part (10-5) does not link to each other mutually with bottom electrode the 6th part (10-6), bottom electrode first (10-1) covers the first temperature sensor pad (3) fully and is attached thereto and connects, bottom electrode second portion (10-2) covers the second temperature sensor pad (4) fully and is attached thereto and connects, bottom electrode third part (10-3) is laid on the second insulation course (9) upward and covers the relevant position of temperature sensor electrode (7), bottom electrode the 4th part (10-4) covers primary heater pad (5) fully upward and is attached thereto and connects, bottom electrode the 5th part (10-5) covers secondary heater pad (6) fully and is attached thereto and connects, bottom electrode the 6th part (10-6) covers the relevant position of heater electrode (8), be communicated with the first capacitance electrode pad (10-7) in bottom electrode third part (10-3), be communicated with the second capacitance electrode pad (10-8) in bottom electrode the 6th part (10-6); Described humidity sensing layer (11) is laid on the space and bottom electrode third part (10-3) between bottom electrode third part (10-3) and bottom electrode the 6th part (10-6), and exposes the first capacitance electrode pad (10-7) and the second capacitance electrode pad (10-8); Described porous top electrode (12) is laid on humidity sensing layer (11) and bottom electrode the 6th part (10-6); The lower surface of described substrate (1) is provided with the groove (13) that forms after hollow out.
2. the preparation method of a kind of controlled heating defrosting condenser type as claimed in claim 1 high-altitude humidity sensor, it is characterized in that: the preparation method specifically finishes according to the following steps:
One, prepare the crystal orientation for the thickness of [100] be the silicon chip of 150 μ m ~ 250 μ m as substrate (1), the surface of clean substrate (1);
Two, the surface of oxidized silicon chip obtains the SiO of one deck densification on the surface of silicon chip
2Layer, i.e. the first insulation course (2);
Three, adopt lithography stripping method preparation temperature sensor electrode (7) and heater electrode (8) on the upper surface of the substrate that step 2 is processed, with the two ends of temperature sensor electrode (7) respectively with the first temperature sensor pad (3) be connected temperature sensor pad (4) and be connected; The two ends of heater electrode (8) are connected 6 with primary heater pad (5) with the secondary heater pad respectively) be connected; Wherein, the resistance of described temperature sensor electrode is 100 Ω ~ 200 Ω, and the resistance of described heater electrode is 30 Ω ~ 50 Ω;
Four, the method that adopts photoetching and magnetic control radio-frequency sputtering to combine prepares the second insulation course (9) at the upper surface of the substrate of step 3 processing; Wherein, described the second insulation course (9) preparation passes on temperature sensor electrode (7) and the heater electrode (8) in the first temperature, and exposes the first temperature sensor pad (3), the second temperature sensor pad (4), primary heater pad (5) and secondary heater pad (6);
Five, adopt the lithography stripping method to prepare bottom electrode (10) at the upper surface of the substrate of step 4 processing; Wherein, described bottom electrode (10) is comprised of bottom electrode first (10-1), bottom electrode second portion (10-2), bottom electrode third part (10-3), bottom electrode the 4th part (10-4), bottom electrode the 5th part (10-5), bottom electrode the 6th part (10-6), the first capacitance electrode pad (10-7) and the second capacitance electrode pad (10-8); In the first temperature sensor pad (3) preparation bottom electrode first (10-1), at the second temperature sensor pad (4) preparation bottom electrode second portion (10-2), prepare bottom electrode third part (10-3) at the second insulation course (9) with temperature sensor electrode (7) relevant position, in primary heater pad (5) preparation bottom electrode the 4th part (10-4), in secondary heater pad (6) preparation bottom electrode the 5th part (10-5), prepare bottom electrode the 6th part (10-6) at the second insulation course with heater electrode (8) relevant position, bottom electrode third part (10-3) is communicated with the first capacitance electrode pad (10-7), and bottom electrode the 6th part (10-6) is communicated with the second capacitance electrode pad (10-8);
Six, the method for employing corrosion hollowed-out is carried out the hollow out processing to the lower surface of the substrate of step 5 processing, obtains the groove (13) for the thermal capacity that reduces substrate (1);
Seven, adopt even glue heat-treating methods to prepare humidity-sensitive film at the upper surface of the substrate of step 6 processing, namely obtain humidity sensing layer (11); Described humidity-sensitive film preparation is on the space and bottom electrode third part (10-3) between bottom electrode third part (10-3) and bottom electrode the 6th part (10-6);
Eight, adopt the method for evaporation coating at the upper surface preparation porous top electrode (12) of the substrate of processing in step 7; Described porous top electrode (12) preparation obtains controlled heating defrosting condenser type high-altitude humidity sensor on humidity sensing layer (11) and bottom electrode the 6th part (10-6).
3. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor, it is characterized in that: the thickness of described the first insulation course (2) is 500nm ~ 1000nm.
4. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor is characterized in that: the lithography stripping method in the described step 3, specifically finish according to the following steps:
A, prepare the mask take the figure of heater electrode and temperature sensor electrode as the hollow out figure;
B, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 is processed, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
C, plated film: the method plated film on the upper surface of the substrate of processing through step b that adopts magnetron sputtering; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% platinum, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts d.c. sputtering, and sputtering power is 32W ~ 60W, and the time is 15min ~ 20min, and during plated film, pressure is controlled at below the 0.5Pa;
D, metal film are peeled off: will soak in the substrate acetone that step c processes, dissolving photoresist, and ultrasonic clear to metal pattern has namely been finished the lithography stripping method of step 3.
5. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor is characterized in that: the method that photoetching and magnetic control radio-frequency sputtering combine in the described step 4, specifically finish according to the following steps:
E, prepare the mask plate take the pattern of pad as figure;
F, photoetching: photoresist is evenly coated on the upper surface of the substrate that step 2 processes, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min, the mask that step e is prepared covers on the upper surface of substrate, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
G, employing magnetic control radio-frequency (RF) sputtering method prepare Al at the upper surface of the substrate of processing through step f
2O
3Insulation course namely obtains the second insulation course (9); Wherein, described magnetic control radio-frequency sputtering prepares Al
2O
3The method of insulation course is that radio-frequency sputtering forms Al
2O
3Method or reactive sputtering form Al
2O
3Method;
Described radio-frequency sputtering forms Al
2O
3Method is: vacuum tightness reaches 1 * 10
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts radio-frequency sputtering, and sputtering power is 60W ~ 80W, and the time is 120min ~ 180min, and during plated film, pressure is controlled at below the 0.5Pa;
Described reactive sputtering forms Al
2O
3Method is: vacuum tightness reaches 1 * 10
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 20ml/min, ar pressure is 1.5Pa ~ 2Pa, and the flow of oxygen is 1.5 ~ 2ml/min, adopts the method for d.c. sputtering or radio-frequency sputtering, sputtering power is 40W ~ 65W, time is 100min～120min, and during plated film, pressure is controlled at below the 0.5Pa.
6. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor is characterized in that: the lithography stripping method in the described step 5, specifically finish according to the following steps:
H, metal film are peeled off: will put into acetone through the substrate that step 4 is processed and soak, the dissolving photoresist peels off welding disking area Al
2O
3Insulation course;
I, plated film: adopt the method for magnetron sputtering to carry out plated film at the upper surface of the substrate of processing through step h; Wherein, the parameter of the method for magnetron sputtering is: target is 99.99% gold, and target is of a size of Φ 60 * 2.5mm; Reach 1 * 10 in vacuum tightness
-5Pa ~ 2 * 10
-5During Pa, toward the logical argon gas of sputtering chamber, the flow of argon gas is 15ml/min ~ 25ml/min, and ar pressure is 1.5Pa ~ 2.5Pa, adopts d.c. sputtering, and sputtering power is 32W ~ 60W, and the time is 15min ~ 20min, and during plated film, pressure is controlled at below the 0.5Pa;
The mask plate of j, preparation bottom electrode pattern, photoresist is evenly coated in the upper surface of the substrate of processing through step I, the mask plate of bottom electrode pattern is covered on the relevant position on photoresist surface, behind exposure 15s ~ 30s, be transferred to the 20s ~ 40s that develops in the developer solution, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min; The golden film that will expose adopts iodine and iodate ammonia saturated solution to erode, and obtains bottom electrode (10).
7. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor is characterized in that: the method for the corrosion hollowed-out in the described step 6, specifically finish according to the following steps:
K, upper surface and the lower surface of the substrate processed through step 5 are coated respectively photoresist, then at 80 ℃ ~ 100 ℃ lower baking 20min ~ 40min;
L, preparation are take upper surface of substrate as the mask of plate-making figure with take the mask of hollow out figure as the plate-making figure, mask take upper surface of substrate as the plate-making figure is covered on the upper surface of the substrate of processing through step k, mask take the hollow out figure as the plate-making figure is covered on the relevant position of the lower surface of substrate, double-sided exposure 15s ~ 30s, developer solution 20s ~ the 40s that develops is put in the good substrate of exposure, rinsing 20s ~ 30s in deionized water, then, at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min;
M, under 70 ℃ ~ 90 ℃ temperature, adopting massfraction is that 35% ~ 40% potassium hydroxide solution carries out corrosion hollowed-out to the substrate of processing through step l, forms groove (13).
8. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor is characterized in that: the even glue heat-treating methods in the described step 7, specifically finish according to the following steps:
N, in tetrahydrofuran, add methyl vinyl silicone rubber, mix, be heated to 50 ℃ ~ 60 ℃ so that fully dissolving, obtain massfraction and be 30% ~ 60% silicone rubber solution; In the silicone rubber solution that obtains, add polyamic acid, ultrasonic to being uniformly dispersed, obtain feeling wet solution; Wherein, the mass ratio of polyamic acid and methyl vinyl silicone rubber is (0.5～1.5): 1;
O, the wet solution of sense that step n is obtained are coated on the upper surface of the substrate that the step 6 processing obtains, then at 80 ℃ ~ 100 ℃ lower constant temperature 5min～10min;
P, preparation humidity-sensitive film pattern are the mask plate of plate-making figure, cover and processing through step o on the upper surface of the substrate that obtains, exposure 15s ~ 30s, then at N, 20s ~ 40s develops in the N-dimethyl acetamide, then rinsing 20s ~ 30s in deionized water at 100 ℃ ~ 120 ℃ lower post bake 30min ~ 40min, namely obtains humidity sensing layer (11).
9. according to claim 2 or the preparation method of 8 described a kind of controlled heating defrosting condenser type high-altitude humidity sensors, it is characterized in that: the thickness of the humidity sensing layer of described step 7 (11) is 1 μ m ~ 10 μ m.
10. the preparation method of a kind of controlled heating defrosting condenser type according to claim 2 high-altitude humidity sensor, it is characterized in that: the method for the evaporation coating in the described step 8, specifically finish according to the following steps: adopt goldleaf as evaporation source material, adopting porous top electrode pattern is template for the mask plate of plate-making figure, film forming in the evaporation coating machine, evaporation current 110A ~ 120A, evaporation time 5s ~ 10s namely obtains porous top electrode (12).
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