CN103000577B - Electronic programmable fuse device manufacturing method - Google Patents
Electronic programmable fuse device manufacturing method Download PDFInfo
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- CN103000577B CN103000577B CN201210451297.4A CN201210451297A CN103000577B CN 103000577 B CN103000577 B CN 103000577B CN 201210451297 A CN201210451297 A CN 201210451297A CN 103000577 B CN103000577 B CN 103000577B
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Abstract
An electronic programmable fuse device manufacturing method includes that a device area is divided into a non-electronic programmable fuse area and an electronic programmable fuse area, edge roughness of the electronic programmable fuse area is increased by multiple times of etching, and the non-electronic programmable fuse area is subjected to photoetching, developing and etching. By means of etching for several times and increasing physical impact of main etching, roughness of the surface of a polycrystalline fuse is improved. Further, by adopting photoresist weak in etching resistance or reducing the thickness of the photoresist, roughness of the edge of the surface of the polycrystalline fuse is increased, so that change of current density of the electronic programmable fuse device is larger, and fuse performance of the electronic programmable fuse device is improved.
Description
Technical field
The present invention relates to semiconductor fabrication process, and be particularly related to electronic programmable fuse-wire device manufacture method.
Background technology
A kind of technology that electronic programmable fuse (electrically programmable fuse, i.e. eFuse) technology utilizes metal electro-migration phenomenon to grow up, its energy and CMOS technology are compatible, and area is little.Mainly be used as and carry out redundancy, field repair chip, to chip reprogramming, make electronic product become more intelligent.
With reference to figure 1, in common electronic programmable fuse-wire device domain, between electrode 2 and electrode 3, by polysilicon fuse 1, be connected.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along electron motion direction, forms cavity, finally opens circuit, and this phenomenon is exactly electromigration (EM) phenomenon.Because the resistance of polysilicon fuse before fusing and after fusing can change, conventionally the resistance after fusing is 10 ~ 1000 times of the resistance before fusing, electronic programmable fuse-wire device utilizes the caused resistance variations of the ELECTROMIGRATION PHENOMENON of polysilicon fuse just, thereby realizes programmable object.
The ELECTROMIGRATION PHENOMENON of electronic programmable fuse-wire device and the electric current distribution in polysilicon fuse are closely related, in the time of electric current distribution inhomogeneous (having current-density gradient) in polysilicon fuse, relevant atom is subject to electronics wind behaviour different in two electrode direction, thereby more easily there is ELECTROMIGRATION PHENOMENON, polysilicon fuse is more easily fused.
Summary of the invention
The invention provides a kind of electronic programmable fuse-wire device manufacture method, strengthen the fusing performance of electronic programmable fuse-wire device.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of electronic programmable fuse-wire device manufacture method, comprising: device area is divided into non-electronic programmable fuse region and electronic programmable fuse region; In described electronic programmable fuse region, carry out multiple etching, to increase its edge roughness; Photoetching, development and etching are carried out in described non-electronic programmable fuse region.
Optionally, in described electronic programmable fuse region, adopt the photoresist of weak etch resistance.
Optionally, the photoresist that the photoresist adopting in described electronic programmable fuse region adopts in described non-electronic programmable fuse region is thin.
Optionally, in described electronic programmable fuse region, adopting the thickness of photoresist be 0.5 to 0.9 times at non-electronic programmable fuse region employing photoresist thickness.
Optionally, describedly in electronic programmable fuse region, carry out multiple etching and comprise: the oxide of removing fuse surface; Adopt large bias voltage value etching fuse, to form the fuse with larger skirt edge roughness; Remove residual fuse metal.
Optionally, adopting carbon tetrafluoride is the oxide that etching gas is removed fuse surface.
Optionally, adopting the mist that comprises chlorine, hydrogen bromide, oxygen is etching gas etching fuse.
Optionally, described large bias voltage is 250 volts to 350 volts.
Optionally, adopt the mist of hydrogen bromide and oxygen to remove residual fuse metal.
Compared to prior art, electronic programmable fuse-wire device manufacture method of the present invention is by multiple etching, and the physical bombardment effect that strengthens main etching, and the roughness on polysilicon fuse surface is increased.In addition, by adopting the weak photoresist of etch resistance, or reduce the thickness of photoresist, thereby improve the roughness at polysilicon fuse edge, current density change in electronic programmable fuse-wire device is increased, to strengthen the fusing performance of electronic programmable fuse-wire device.
Accompanying drawing explanation
Fig. 1 is conventional electronic programmable fuse-wire device domain schematic diagram;
Fig. 2 is the schematic flow sheet of a kind of execution mode of electronic programmable fuse-wire device manufacture method of the present invention;
Fig. 3 is the schematic flow sheet of a step S2 embodiment in Fig. 2;
Fig. 4 is for adopting electronic programmable fuse-wire device manufacture method of the present invention formed electronic programmable fuse-wire device domain schematic diagram afterwards.
Embodiment
Inventor is through test of many times and put into practice discovery, in the technical process of fuse exposure, and by multiple etching, and the physical bombardment effect that strengthens main etching, can make the roughness on polysilicon fuse surface increase.In addition, adopt the weak photoresist of etch resistance, or reduce the thickness of photoresist, make it photoresist when etch polysilicon and be not enough to keep out.
Below in conjunction with specific embodiments and the drawings, the present invention will be described in detail.
With reference to figure 2, the invention provides a kind of electronic programmable fuse-wire device manufacture method, comprising:
Step S1, is divided into non-electronic programmable fuse region and electronic programmable fuse region by device area;
Step S2, carries out multiple etching in described electronic programmable fuse region, to increase its edge roughness;
Step S3, carries out photoetching, development and etching to described non-electronic programmable fuse region.
Wherein, with reference to figure 3, in a kind of embodiment of the present invention, step S2 can comprise:
Step S21, removes the oxide on fuse surface.Specifically, etching gas can be mainly carbon tetrafluoride, in order to remove polysilicon surface because of the impurity such as oxide with air Long Term Contact self-assembling formation.
Step S22, adopts large bias voltage value etching fuse, to form the fuse with larger skirt edge roughness.Specifically, can adopt the mist that comprises chlorine and/or hydrogen bromide and/or oxygen is etching gas etching fuse, and wherein, bias voltage value is 250 volts to 350 volts.
Step S23, removes residual fuse metal.Specifically, can adopt the mist of hydrogen bromide and oxygen, thoroughly remove residual polysilicon, and safety stop is on lower floor surface.
In addition, at described electronic programmable fuse region field surface, can adopt the weak photoresist of etch resistance, make photoresist when etch polysilicon be not enough to keep out.In another kind of embodiment, also can realize by reducing the thickness of photoresist, the photoresist that the photoresist adopting in described electronic programmable fuse region adopts in described non-electronic programmable fuse region is thin.Specifically, 0.5 to 0.9 times of the thickness that is the photoresist that adopts in non-electronic programmable fuse region at the thickness of described electronic programmable fuse photoresist that region adopts.
With reference to figure 4, in adopting a kind of embodiment of electronic programmable fuse-wire device manufacture method of the present invention, through after the related process such as multiple etching are carried out in fuse region, in formed electronic programmable fuse-wire device domain, the polysilicon fuse 100 of connecting electrode 2 and electrode 3 becomes very coarse.Now, when between electrode 2 and electrode 3 in addition during high electric current, the uniformity of current density variation of polysilicon fuse 100, thus strengthened the electric migration performance of electronic programmable fuse, and then strengthened the fusing performance of electronic programmable fuse-wire device.
Compared to prior art, the present invention is in making the process of electronic programmable fuse-wire device, the device for the treatment of photoetching is divided into non-electronic programmable fuse region and electronic programmable fuse region, and pass through multiple etching, and the physical bombardment effect that strengthens main etching, can make the roughness on polysilicon fuse surface increase.In addition, adopt the weak photoresist of etch resistance, or reduce the thickness of photoresist, making it photoresist when etch polysilicon is not enough to keep out, thereby improve the roughness at polysilicon fuse edge, current density change in electronic programmable fuse-wire device is increased, to strengthen the fusing performance of electronic programmable fuse-wire device.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (7)
1. an electronic programmable fuse-wire device manufacture method, is characterized in that, comprising:
Device area is divided into non-electronic programmable fuse region and electronic programmable fuse region;
In described electronic programmable fuse region, carry out multiple etching, to increase its edge roughness; This step comprises: the oxide of removing fuse surface; Adopt large bias voltage value etching fuse, described large bias voltage is 250 volts to 350 volts; Remove residual fuse metal;
Photoetching, development and etching are carried out in described non-electronic programmable fuse region.
2. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, adopts the photoresist of weak etch resistance in described electronic programmable fuse region.
3. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, the photoresist that the photoresist adopting in described electronic programmable fuse region adopts in described non-electronic programmable fuse region is thin.
4. electronic programmable fuse-wire device manufacture method as claimed in claim 3, is characterized in that, the thickness that adopts photoresist in described electronic programmable fuse region be 0.5 to 0.9 times at non-electronic programmable fuse region employing photoresist thickness.
5. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, adopting carbon tetrafluoride is the oxide that etching gas is removed fuse surface.
6. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, adopting the mist that comprises chlorine and/or hydrogen bromide and/or oxygen is etching gas etching fuse.
7. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, adopts the mist of hydrogen bromide and oxygen to remove residual fuse metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451297.4A CN103000577B (en) | 2012-11-12 | 2012-11-12 | Electronic programmable fuse device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451297.4A CN103000577B (en) | 2012-11-12 | 2012-11-12 | Electronic programmable fuse device manufacturing method |
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| CN103000577A CN103000577A (en) | 2013-03-27 |
| CN103000577B true CN103000577B (en) | 2014-12-10 |
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| CN201210451297.4A Active CN103000577B (en) | 2012-11-12 | 2012-11-12 | Electronic programmable fuse device manufacturing method |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674272A (en) * | 2004-03-23 | 2005-09-28 | 台湾积体电路制造股份有限公司 | Electronic fuse wire and producing method for forming the same electronic fuse wire |
| CN102569184A (en) * | 2012-03-09 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Method for forming polysilicon fuse |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090112390A (en) * | 2008-04-24 | 2009-10-28 | 삼성전자주식회사 | Electrical fuse device |
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- 2012-11-12 CN CN201210451297.4A patent/CN103000577B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674272A (en) * | 2004-03-23 | 2005-09-28 | 台湾积体电路制造股份有限公司 | Electronic fuse wire and producing method for forming the same electronic fuse wire |
| CN102569184A (en) * | 2012-03-09 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Method for forming polysilicon fuse |
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| CN103000577A (en) | 2013-03-27 |
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