CN102956833A - Organic electroluminescent device and preparation method thereof - Google Patents
Organic electroluminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN102956833A CN102956833A CN2011102511582A CN201110251158A CN102956833A CN 102956833 A CN102956833 A CN 102956833A CN 2011102511582 A CN2011102511582 A CN 2011102511582A CN 201110251158 A CN201110251158 A CN 201110251158A CN 102956833 A CN102956833 A CN 102956833A
- Authority
- CN
- China
- Prior art keywords
- layer
- organic electroluminescence
- electroluminescence device
- quantum well
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an organic electroluminescent device. The organic electroluminescent device comprises a positive pole, a quantum well layer, a light-emitting layer and a negative pole, wherein the positive pole, the quantum well layer, the light-emitting layer and the negative pole are sequentially stacked, the quantum well layer comprises a first hole transfer layer, a polythiophene layer and a second hole transfer layer, and the first hole transfer layer, the polythiophene layer and the second hole transfer layer are sequentially stacked. The organic electroluminescent device is higher in light-emitting efficiency. Besides, the invention further provides a preparation method of the organic electroluminescent device.
Description
[technical field]
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
[background technology]
The principle of luminosity of organic electroluminescence device is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and the hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from the ground state transition to excitation state, excited energy produces photon by Radiation-induced deactivation, discharges luminous energy.
But in organic small molecule material, hole transport speed ratio electric transmission speed is wanted high two and therefore, is often caused the recombination probability of hole and electronics low more than the order of magnitude, thereby has reduced the luminous efficiency of organic electroluminescence device.
[summary of the invention]
Based on this, be necessary the organic electroluminescence device that provides a kind of luminous efficiency higher.
A kind of organic electroluminescence device comprises the anode, quantum well layer, luminescent layer and the negative electrode that stack gradually, and described quantum well layer comprises the first hole transmission layer, polythiophene layer and the second hole transmission layer that stacks gradually.
In a preferred embodiment, the material of described polythiophene layer is poly-3-hexyl thiophene, poly-3 methyl thiophene, poly-3-octyloxy thiophene or poly-3-dodecyl thiophene.
In a preferred embodiment, the material of described the first hole transmission layer and the second hole transmission layer is the mixture of PEDOT and PSS.
In a preferred embodiment, the mass ratio of PEDOT and PSS is 2: 1～6: 1 in described the first hole transmission layer and the second hole transmission layer.
In a preferred embodiment, the number of plies of described quantum well layer is more than or equal to 1 and less than or equal to 5.
In a preferred embodiment, the material of described luminescent layer is mixture or the oxine aluminium that luminescent material and electron transport material mix and form, and described luminescent material is two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium or three (2-phenylpyridine) and close iridium, described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, described electron transport material is main body, and described luminescent material is the doping object, and the doping ratio of described luminescent material is 1%～20%.
In a preferred embodiment, described organic electroluminescence device also comprises the hole blocking layer that is formed between described luminescent layer and the described negative electrode, the material of described hole blocking layer is oxine aluminium, 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, the thickness of described hole blocking layer is 3nm～10nm.
In a preferred embodiment, described organic electroluminescence device also comprises the electron transfer layer that is formed between described hole blocking layer and the described negative electrode, the material of described electron transfer layer is oxine aluminium, 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, the thickness of described electron transfer layer is 40nm～80nm.
In a preferred embodiment, described organic electroluminescence device also comprises the electron injecting layer that is formed between described electron transfer layer and the described negative electrode, and the material of described electron injecting layer is Cs
2CO
3, CsN
3, LiF or CsF.
The preparation method of the organic electroluminescence device that in addition, also is necessary to provide a kind of.
A kind of preparation method of organic electroluminescence device may further comprise the steps: step 1, provide anode, and antianode carries out pre-treatment; Step 2, form the first hole transmission layer at described anode surface spin coating PEDOT/PSS, then form the polythiophene layer at the first hole transmission layer surface spin coating polythiophene, form the second hole transmission layer at described polythiophene layer surface spin coating PEDOT/PSS again, described the first hole transmission layer, polythiophene layer and the second hole transmission layer form quantum well layer; Step 3, evaporation forms luminescent layer on described quantum well layer surface; Step 4, evaporation forms hole blocking layer on described luminescent layer surface; Step 5, evaporation forms electron transfer layer on described hole blocking layer surface; Step 6, evaporation forms electron injecting layer on described electron transfer layer surface; Reach step 7, form negative electrode at the surperficial evaporation of described electron injecting layer.
Above-mentioned organic electroluminescence device and manufacture method thereof prepare quantum well layer by the technique of spin coating, and thickness simple to operate and quantum well layer is easily controlled; Quantum well layer limits the hole in the organic electroluminescence device of preparation, the number in regulation and control hole, and then the transmission rate of regulating the hole is utilized quantum well layer, form the potential well in a hole, the hole of transmission is limited by potential well (quantum well) through this zone part, and another part is transferred to luminescent layer and electronics carries out compound generation exciton, and the number of plies that changes quantum well layer then can be regulated and control hole transport speed, improve the recombination probability of exciton, finally improve luminous efficiency.
[description of drawings]
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of the organic electroluminescence device of an embodiment;
Fig. 2 is preparation method's the flow chart of the organic electroluminescence device of an embodiment;
Fig. 3 is current density and the voltage relationship figure of the organic electroluminescence device of embodiment one.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
See also Fig. 1, the organic electroluminescence device 100 of an embodiment comprises anode 10, quantum well layer 20, luminescent layer 30, hole blocking layer 40, electron transfer layer 50, electron injecting layer 60 and the negative electrode 70 that stacks gradually.
Luminescent layer 30 is formed at the surface of quantum well layer 20.The material of luminescent layer is mixture or the oxine aluminium (Alq that luminescent material and electron transport material mix and form
3), be preferably oxine aluminium.Luminescent material is two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3), electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI).Electron transport material is main body, and luminescent material is the doping object, and the doping ratio of luminescent material is 1%～20%.Luminescent layer thickness be 2nm～50nm, be preferably 30nm.
First hole transmission layer 21 of above-mentioned organic electroluminescence device 100 by stacking gradually, polythiophene layer 23 and the second hole transmission layer 25 form quantum well layer 20, the HOMO energy level of PEDOT is-5.2ev, the HOMO energy level of polythiophene is-4.8ev, the energy level of PEDOT is lower than the polythiophene, this just can well be with hole confinement (transmit by the potential barrier that overcomes between the HOMO energy level in the hole) in trap, thereby limit in 20 pairs of holes of quantum well layer, the number in regulation and control hole, and then the transmission rate of regulating the hole is utilized quantum well layer, form the potential well in a hole, the hole of transmission is limited by potential well (quantum well) through this zone part, and another part is transferred to luminescent layer and electronics carries out compound generation exciton.The number of plies that changes quantum well layer then can be regulated and control hole transport speed, improves the recombination probability of exciton, finally improves luminous efficiency.
Be appreciated that hole blocking layer 40, electron transfer layer 50 and electron injecting layer 60 can omit in this organic electroluminescence device 100, also other functional layers can be set as required.
Please consult simultaneously Fig. 2, the preparation method of the organic electroluminescence device 100 of an embodiment, it may further comprise the steps:
Step S110, provide an anode 10, and antianode 10 carries out pre-treatment.
Step S120, form the first hole transmission layer 21 at anode 10 surperficial PEDOT/PSS, then form polythiophene layer 23 at the first hole transmission layer 21 surperficial spin coating polythiophenes, form the second hole transmission layer 25 at described polythiophene layer 23 surperficial spin coating PEDOT/PSS again, described the first hole transmission layer 21, polythiophene layer 23 and the second hole transmission layer 25 form quantum well layer 20.
The first hole transmission layer 21 and the second hole transmission layer 25 form by the aqueous solution spin coating of PEDOT:PSS.Wherein the mass ratio of PEDOT and PSS is 2: 1～6: 1, and the mass concentration of PEDOT:PSS is 1%～5%.The thickness of the first Hole-injecting Buffer Layer for Improvement 21 and the second Hole-injecting Buffer Layer for Improvement 25 is 10nm～30nm.The spin coating post-drying.
Step S130, form luminescent layers 30 at the surperficial evaporations of quantum well layer 20.
The material of luminescent layer is mixture or the oxine aluminium (Alq that luminescent material and electron transport material mix and form
3), be preferably oxine aluminium.Luminescent material is two (4,6-difluorophenyl pyridine-N, C
2) the pyridine formyl closes iridium (FIrpic), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and close iridium (Ir (MDQ)
2(acac)) or three (2-phenylpyridines) close iridium (Ir (ppy)
3), electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI).Electron transport material is main body, and luminescent material is the doping object, and the doping ratio of luminescent material is 1%～20%.Luminescent layer thickness be 2nm～50nm, be preferably 30nm.
Step S140, form hole blocking layers 40 at the surperficial evaporations of luminescent layer 30.
The material of hole blocking layer 40 is oxine aluminium (Alq
3), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI) are preferably TPBI.The thickness of hole blocking layer 40 is 3nm～10nm, is preferably 5nm.
Step S150, form electron transfer layers 50 at the surperficial evaporations of hole blocking layer 40.
The material of electron transfer layer 50 is oxine aluminium (Alq
3), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazole (TPBI) are preferably Bphen.The thickness of electron transfer layer 50 is 40nm～80nm, is preferably 60nm.
Step S160, form electron injecting layers 60 at the surperficial evaporations of electron transfer layer 50.
The material of electron injecting layer 60 is Cs
2CO
3, CsN
3, LiF or CsF, be preferably CsN
3The thickness of electron injecting layer 60 is 0.5nm～5nm, is preferably 4nm.
Step S170, form negative electrodes 70 at the surperficial evaporations of electron injecting layer 60.
The material of negative electrode 70 is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au), is preferably Ag.The thickness of negative electrode 70 is 80nm～250nm, is preferably 150nm.
Above-mentioned organic electroluminescence device preparation method prepares quantum well layer 20 by the technique of spin coating, and thickness simple to operate and quantum well layer 20 is easily controlled; Limit in 20 pairs of holes of quantum well layer in the organic electroluminescence device of preparation, the number in regulation and control hole, and then the transmission rate of regulating the hole is utilized quantum well layer, form the potential well in a hole, the hole of transmission is limited by potential well (quantum well) through this zone part, and another part is transferred to luminescent layer and electronics carries out compound generation exciton, and the number of plies that changes quantum well layer then can be regulated and control hole transport speed, improve the recombination probability of exciton, finally improve luminous efficiency.
Preparation method to organic electroluminescence device provided by the invention is elaborated below in conjunction with specific embodiment.
Embodiment one
First ITO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 5min, and power is 35W; The spin coating quantum well structure, first spin coating PEDOT/PSS solution, mass fraction is 1%, thickness is 10nm, spin coating polythiophene solution again, material is poly--3 hexyl thiophenes, solvent is chlorobenzene, mass fraction is 5%, thickness is 10nm, and then spin coating PEDOT/PSS solution, and mass fraction is 1%, thickness is 10nm, forms quantum well layer; Then evaporation luminescent layer, material is oxine aluminium, thickness is 30nm; Follow the evaporation hole blocking layer, material is TPBI, and thickness is 5nm; Follow the evaporation electron transfer layer, material is Bphen, and thickness is 60nm; Follow the evaporation electron injecting layer, material is CsN
3, thickness is 4nm; Then evaporation forms negative electrode, and material is Ag, and thickness is 150nm, obtains at last needed organic electroluminescence device.Use high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure＜1 * 10 during evaporation
-3Pa).
See also Fig. 3, the structure that is depicted as preparation among the embodiment 1 is ITO/ (PEDOT:PSS)/P3HT/ (PEDOT:PSS)/Alq
3/ TPBi/Bphen/CsN
3/ Ag and general without quantum well device architecture: ITO/NPB/TAPC/Alq
3/ TPBi/Bphen/CsN
3The luminous efficiency of/Ag and the relation of brightness.Use the current-voltage tester (U.S. Keithly company during test, 2602), the electroluminescent spectrum tester (U.S. photo research company model:, model: PR650) and screen intensity meter (Beijing Normal University, model: ST-86LA).
On scheming, can see, the luminous efficiency of embodiment 1 is larger than Comparative Examples, maximum luminous efficiency is 13.5lm/W, and that Comparative Examples only is 12.2lm/W, and this is explanation just, when adopting quantum well structure of the present invention, hole transport speed is regulated and control, make the transmission rate in hole and the transmission rate coupling of electronics, thereby improve the recombination probability of hole-electronics, finally improved luminous efficiency.
Embodiment two
First ITO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 15min, and power is 10W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction 1%, thickness is 15nm, spin coating polythiophene solution again, material is poly--3 hexyl thiophenes, solvent is chlorobenzene, mass fraction is 2%, thickness is 12nm, and then spin coating PEDOT/PSS solution, mass fraction 1%, thickness is 15nm, forms quantum well layer; Then evaporation luminescent layer, material is Alq
3, thickness is 50nm; Follow the evaporation hole blocking layer, material is TPBi, and thickness is 4nm; Follow the evaporation electron transfer layer, material is TAZ, and thickness is 80nm; Follow the evaporation electron injecting layer, material is Cs
2CO
3, thickness is 5nm; Then evaporation forms negative electrode, and material is Au, and thickness is 200nm, obtains at last needed organic electroluminescence device.
The luminous efficiency of the organic electroluminescence device of embodiment 2 preparations is 13.4m/W.
Embodiment three
First AZO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 10min, and power is 20W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction 1%, thickness is 15nm, spin coating polythiophene solution again, material is poly--3 methylthiophenes, solvent is chloroform, mass fraction is 3%, thickness is 12nm, and then spin coating PEDOT/PSS solution, mass fraction 1%, thickness is 15nm, forms quantum well layer; Then evaporation luminescent layer, material is TAZ:Firpic, and doping ratio is 20%, and thickness is 20nm; Follow the evaporation hole blocking layer, material is Bphen, and thickness is 5nm; Follow the evaporation electron transfer layer, material is TAZ, and thickness is 40nm; Follow the evaporation electron injecting layer, material is LiF, and thickness is 0.5nm; Then evaporation forms negative electrode, and material is Pt, and thickness is 80nm, obtains at last needed organic electroluminescence device.
The luminous efficiency of the organic electroluminescence device of embodiment 3 preparations is 13.6m/W.
Embodiment four
First AZO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 7min, and power is 50W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction is 3%, thickness is 12nm, spin coating polythiophene solution again, material is poly--3 methylthiophenes, solvent is paraxylene, mass fraction is 2.5%, thickness is 12nm, and then spin coating PEDOT/PSS solution, and mass fraction is 3%, thickness is 12nm, repeats above-mentioned steps and once forms two-layer quantum well layer; Then evaporation luminescent layer, material is Bphen:Ir (ppy) 3, and doping ratio is 8%, and thickness is 10nm; Follow the evaporation hole blocking layer, material is Bphen, and thickness is 3nm; Follow the evaporation electron transfer layer, material is TPBi, and thickness is 50nm; Follow the evaporation electron injecting layer, material is CsF; Then evaporation forms negative electrode, and material is Al, and thickness is 150nm, obtains at last needed organic electroluminescence device.
Embodiment five
First IZO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 8min, and power is 40W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction is 2.5%, thickness is 30nm, spin coating polythiophene solution again, material is poly--3 methylthiophenes, solvent is chlorobenzene, mass fraction is 3%, thickness is 20nm, and then spin coating PEDOT/PSS solution, and mass fraction is 2.5%, thickness is 30nm, repeats above-mentioned steps and forms three layers of quantum well layer three times; Then evaporation luminescent layer, material is TPBi:Ir (MDQ)
2(acac), doping ratio is 1%, and thickness is 2nm; Follow the evaporation hole blocking layer, material is TPBi, and thickness is 7nm; Follow the evaporation electron transfer layer, material is Alq
3, thickness is 60nm; Follow the evaporation electron injecting layer, material is LiF, and thickness is 0.7nm; Then evaporation forms negative electrode, and material is Ag, and thickness is 250nm, obtains at last needed organic electroluminescence device.
Embodiment six
First ITO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 6min, and power is 25W; The spin coating quantum well layer, the spin coating PEDOT/PSS of elder generation solution, mass fraction is 5%, thickness is 30nm, spin coating polythiophene solution again, material is poly-3-octyloxy thiophene, and solvent is chlorobenzene, and mass fraction is 3%, thickness is 20nm, and then spin coating PEDOT/PSS solution, the amount mark is 5%, thickness is 30nm; Then evaporation luminescent layer, material is TAZ:Firpic, and doping ratio is 15%, and thickness is 10nm; Follow the evaporation hole blocking layer, material is Bphen, and thickness is 10nm; Follow the evaporation electron transfer layer, material is TPBi, and thickness is 75nm; Follow the evaporation electron injecting layer, material is CsN
3, thickness is 2nm; Then evaporation forms negative electrode, and material is Ag, and thickness is 120nm, obtains at last needed organic electroluminescence device.
Embodiment seven
First FTO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 5min, and power is 10W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction is 5%, thickness is 30nm, spin coating polythiophene solution again, material is poly-3-dodecyl thiophene, solvent is chlorobenzene, mass fraction is 3%, thickness is 25nm, and then spin coating PEDOT/PSS solution, and mass fraction is 5%, thickness is 30nm, repeats above-mentioned steps and once forms two-layer quantum well layer; Then evaporation luminescent layer, material is Alq
3, thickness is 30nm; Follow the evaporation hole blocking layer, material is Bphen, and thickness is 5nm; Follow the evaporation electron transfer layer, material is Alq
3Follow the evaporation electron injecting layer, material is LiF, and thickness is 1nm; Then evaporation forms negative electrode, and material is Al, and thickness is 180nm, obtains at last needed organic electroluminescence device.
Embodiment eight
First FTO is used liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol removes the organic pollution of glass surface, cleans up rear it to be carried out oxygen plasma treatment, and the oxygen plasma treatment time is 10min, and power is 20W; The spin coating quantum well layer, first spin coating PEDOT/PSS solution, mass fraction is 5%, thickness is 30nm, spin coating polythiophene solution again, material is poly-3-dodecyl thiophene, solvent is chlorobenzene, mass fraction 8%, thickness is 30nm, and then spin coating PEDOT/PSS solution, and mass fraction is 5%, thickness is 30nm, repeats above-mentioned steps and forms five layers of quantum well layer four times; Then evaporation luminescent layer, material is Alq3, thickness is 40nm; Follow the evaporation hole blocking layer, material is TAZ, and thickness is 7nm; Follow the evaporation electron transfer layer, material is TAZ, and thickness is 50nm; Follow the evaporation electron injecting layer, material is CsF, and thickness is 3nm; Then evaporation forms negative electrode, and material is Ag, and thickness is 100nm, obtains at last needed organic electroluminescence device.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. organic electroluminescence device, comprise the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that, described organic electroluminescence device also comprises the quantum well layer that is formed between described anode and the described luminescent layer, and described quantum well layer comprises the first hole transmission layer, polythiophene layer and the second hole transmission layer that stacks gradually.
2. organic electroluminescence device according to claim 1 is characterized in that: the material of described polythiophene layer is poly-3-hexyl thiophene, poly-3 methyl thiophene, poly-3-octyloxy thiophene or poly-3-dodecyl thiophene.
3. organic electroluminescence device according to claim 1, it is characterized in that: the material of described the first hole transmission layer and the second hole transmission layer is the mixture of PEDOT and PSS.
4. organic electroluminescence device according to claim 3, it is characterized in that: the mass ratio of PEDOT and PSS is 2: 1～6: 1 in described the first hole transmission layer and the second hole transmission layer.
5. organic electroluminescence device according to claim 1, it is characterized in that: the number of plies of described quantum well layer is more than or equal to 1 and less than or equal to 5.
6. organic electroluminescence device according to claim 1, it is characterized in that: the material of described luminescent layer is mixture or the oxine aluminium that luminescent material and electron transport material mix and form, described luminescent material is two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium or three (2-phenylpyridine) and close iridium, described electron transport material is 4,7-diphenyl-1, the 10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, described electron transport material is main body, and described luminescent material is the doping object, and the doping ratio of described luminescent material is 1%～20%.
7. organic electroluminescence device according to claim 1, it is characterized in that: described organic electroluminescence device also comprises the hole blocking layer that is formed between described luminescent layer and the described negative electrode, the material of described hole blocking layer is oxine aluminium, 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, the thickness of described hole blocking layer is 3nm～10nm.
8. organic electroluminescence device according to claim 7, it is characterized in that: described organic electroluminescence device also comprises the electron transfer layer that is formed between described hole blocking layer and the described negative electrode, the material of described electron transfer layer is oxine aluminium, 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or N-aryl benzimidazole, the thickness of described electron transfer layer is 40nm～80nm.
9. organic electroluminescence device according to claim 8, it is characterized in that: described organic electroluminescence device also comprises the electron injecting layer that is formed between described electron transfer layer and the described negative electrode, the material of described electron injecting layer is Cs
2CO
3, CsN
3, LiF or CsF.
10. the preparation method of an organic electroluminescence device may further comprise the steps:
Step 1, provide anode, and antianode carries out pre-treatment;
Step 2, form the first hole transmission layer at described anode surface spin coating PEDOT/PSS, then form the polythiophene layer at the first hole transmission layer surface spin coating polythiophene, form the second hole transmission layer at described polythiophene layer surface spin coating PEDOT/PSS again, described the first hole transmission layer, polythiophene layer and the second hole transmission layer form quantum well layer;
Step 3, evaporation forms luminescent layer on described quantum well layer surface;
Step 4, evaporation forms hole blocking layer on described luminescent layer surface;
Step 5, evaporation forms electron transfer layer on described hole blocking layer surface;
Step 6, evaporation forms electron injecting layer on described electron transfer layer surface; And
Step 7, evaporation forms negative electrode on described electron injecting layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110251158.2A CN102956833B (en) | 2011-08-29 | 2011-08-29 | Organic electroluminescence device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110251158.2A CN102956833B (en) | 2011-08-29 | 2011-08-29 | Organic electroluminescence device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102956833A true CN102956833A (en) | 2013-03-06 |
| CN102956833B CN102956833B (en) | 2015-10-28 |
Family
ID=47765341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110251158.2A Active CN102956833B (en) | 2011-08-29 | 2011-08-29 | Organic electroluminescence device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102956833B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226184A (en) * | 2014-06-26 | 2016-01-06 | 潘才法 | A kind of electroluminescent device comprising stable organic free radical compound |
| CN109686853A (en) * | 2018-12-26 | 2019-04-26 | 上海晶合光电科技有限公司 | A kind of organic electroluminescence device of color-adjustable |
| CN114284435A (en) * | 2021-12-14 | 2022-04-05 | 电子科技大学 | Low-dark-current organic multiplication type photoelectric detector and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409412A (en) * | 2002-04-03 | 2003-04-09 | 清华大学 | Organic electroluminescence device using organic quantum trap as hole transmission layer |
| CN1617642A (en) * | 2003-11-13 | 2005-05-18 | 爱美思公司 | Organic electroluminescent devices |
| US20100123152A1 (en) * | 2008-11-19 | 2010-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device |
-
2011
- 2011-08-29 CN CN201110251158.2A patent/CN102956833B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409412A (en) * | 2002-04-03 | 2003-04-09 | 清华大学 | Organic electroluminescence device using organic quantum trap as hole transmission layer |
| CN1617642A (en) * | 2003-11-13 | 2005-05-18 | 爱美思公司 | Organic electroluminescent devices |
| US20100123152A1 (en) * | 2008-11-19 | 2010-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226184A (en) * | 2014-06-26 | 2016-01-06 | 潘才法 | A kind of electroluminescent device comprising stable organic free radical compound |
| CN109686853A (en) * | 2018-12-26 | 2019-04-26 | 上海晶合光电科技有限公司 | A kind of organic electroluminescence device of color-adjustable |
| CN114284435A (en) * | 2021-12-14 | 2022-04-05 | 电子科技大学 | Low-dark-current organic multiplication type photoelectric detector and preparation method thereof |
| CN114284435B (en) * | 2021-12-14 | 2023-05-12 | 电子科技大学 | Low dark current organic multiplication type photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102956833B (en) | 2015-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102956833B (en) | Organic electroluminescence device and preparation method thereof | |
| CN102916131A (en) | Organic light-emitting device and preparation method thereof | |
| CN103972413A (en) | Organic light-emitting device and production method thereof | |
| CN102983287A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN103296219A (en) | Organic electroluminescence device and preparing method thereof | |
| CN104183738A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103427045A (en) | Organic light-emitting device and preparation method thereof | |
| CN103682132A (en) | Organic light-emitting device and preparation method thereof | |
| CN103378307A (en) | Laminated organic light emitting device and preparation method thereof | |
| CN104253243A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103682131A (en) | Organic light-emitting device and preparation method thereof | |
| CN103682128A (en) | Organic light-emitting device and preparation method thereof | |
| CN103972408A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104051642A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN103427028B (en) | Organic electroluminescence device and preparation method thereof | |
| CN103378310A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN103456898A (en) | Top-emitting organic electroluminescent device and producing method thereof | |
| CN103427024A (en) | Organic light-emitting device and preparation method thereof | |
| CN103682109A (en) | Organic light-emitting device and preparation method thereof | |
| CN104183731A (en) | Organic light emitting device and manufacturing method thereof | |
| CN104183777A (en) | Organic light emitting device and manufacturing method thereof | |
| CN104518109A (en) | Organic electroluminescent device and method for preparing same | |
| CN104253229A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN103972409A (en) | Organic light-emitting device and method for manufacturing same | |
| CN103972411A (en) | Organic light-emitting device and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |