CN103972409A - Organic light-emitting device and method for manufacturing same - Google Patents

Organic light-emitting device and method for manufacturing same Download PDF

Info

Publication number
CN103972409A
CN103972409A CN201310039163.6A CN201310039163A CN103972409A CN 103972409 A CN103972409 A CN 103972409A CN 201310039163 A CN201310039163 A CN 201310039163A CN 103972409 A CN103972409 A CN 103972409A
Authority
CN
China
Prior art keywords
layer
evaporation
metal
doped layer
electroluminescence device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310039163.6A
Other languages
Chinese (zh)
Inventor
周明杰
王平
黄辉
陈吉星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN201310039163.6A priority Critical patent/CN103972409A/en
Publication of CN103972409A publication Critical patent/CN103972409A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides an organic light-emitting device which comprises an anode, a hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a charge generating layer, a second hole transport layer, a second light-emitting layer, a second electron transport layer, an electron injection layer and a cathode. The anode, the hole injection layer, the first hole transport layer, the first light-emitting layer, the first electron transport layer, the charge generating layer, the second hole transport layer, the second light-emitting layer, the second electron transport layer, the electron injection layer and the cathode are sequentially stacked on one another, the charge generating layer comprises an n-type doped layer and a p-type doped layer, the n-type doped layer is stacked on the surface of the first electron transport layer, the p-type doped layer is formed on the surface of the n-type doped layer, the n-type doped layer is made of metal and electron transport materials which are doped in the metal, the p-type doped layer is made of metal and ferric trichloride which is doped in the metal, the metal is at least one type of silver, aluminum, platinum and gold selectively, and a mass ratio of the electron transport materials to the metal of the n-type doped layer is 1:100-1:10. The organic light-emitting device has the advantage of high light-emitting efficiency. The invention further provides a method for manufacturing the organic light-emitting device.

Description

Organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
The principle of luminosity of organic electroluminescence device is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.But the luminous efficiency of organic electroluminescence device is lower at present.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of luminous efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprises the anode stacking gradually, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode, described charge generation layer comprises the p-type doped layer that is laminated in the N-shaped doped layer on described the first electron transfer layer surface and is formed at described N-shaped doped layer surface, the material of described N-shaped doped layer comprises metal and is entrained in the electron transport material in described metal, the material of described p-type doped layer comprises metal and is entrained in the ferric trichloride in described metal, and described metal is selected from silver, aluminium, at least one in platinum and gold, described electron transport material is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3, at least one in 4-oxadiazoles and N-aryl benzimidazole, described in described N-shaped doped layer, the mass ratio of electron transport material and described metal is 1:100 ~ 1:10, and described in described p-type doped layer, the mass ratio of ferric trichloride and described metal is 1:50 ~ 1:10.
In an embodiment, the thickness of described N-shaped doped layer is 5nm ~ 20nm therein, and the thickness of described p-type doped layer is 1nm ~ 10nm.
Therein in an embodiment, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
Therein in an embodiment, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N; N '-diphenyl-4, at least one in 4 '-benzidine.
In an embodiment, the material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1 therein, 10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
A preparation method for organic electroluminescence device, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare N-shaped doped layer at described the first electron transfer layer surface evaporation, the material of described N-shaped doped layer comprises metal and is entrained in the electron transport material in described metal, described metal is selected from silver, aluminium, at least one in platinum and gold, described electron transport material is selected from 4, 7-diphenyl-1, 10-phenanthroline, 1, 2, 4-triazole derivative, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1, 3, at least one in 4-oxadiazoles and N-aryl benzimidazole, described in described N-shaped doped layer, the mass ratio of electron transport material and described metal is 1:100 ~ 1:10, described metal and described electron transport material evaporate respectively in two evaporation boats, evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of described metal is 1nm/s ~ 10nm/s, and the evaporation speed of described electron transport material is 0.1nm/s ~ 1nm/s,
On described N-shaped doped layer surface, evaporation is prepared p-type doped layer, the material of described p-type doped layer comprises metal and is entrained in the ferric trichloride in described metal, described metal is selected from least one in silver, aluminium, platinum and gold, described metal and described ferric trichloride evaporate respectively in two evaporation boats, and evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of described metal is 1nm/s ~ 10nm/s, and the evaporation speed of described ferric trichloride is 0.1nm/s ~ 1nm/s; And
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on p-type doped layer surface successively evaporation.
Therein in an embodiment, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
Therein in an embodiment, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N; N '-diphenyl-4, at least one in 4 '-benzidine.
In an embodiment, the thickness of described N-shaped doped layer is 5nm ~ 20nm therein, and the thickness of described p-type doped layer is 1nm ~ 10nm.
Therein in an embodiment, before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
Above-mentioned organic electroluminescence device and preparation method thereof, N-shaped doped layer can effectively improve electric transmission speed, improve conductivity and permeability, and the existence of metal can improve the power of regeneration of electronics simultaneously, reduces electronic injection potential barrier; P-type doped layer is by metal-doped ferric trichloride, there are a large amount of free electrons, the existence of ferric trichloride can improve the transmission in hole, the metal ion of metal and ferric trichloride can interact, improve the binding ability of nucleus, improve transmission performance, and the two-layer metal material that all adopts of charge generation layer, potential barrier difference between metal material is less, this has just reduced the contact potential between two-layer, be conducive to reduce the energy consumption between interface, improve regeneration efficiency, finally improve the luminous efficiency of organic electroluminescence device; Organic electroluminescence device has two luminescence units simultaneously, thereby has brightness and luminous efficiency at double.
Brief description of the drawings
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the preparation method's of the organic electroluminescence device of an execution mode flow chart;
Fig. 3 is brightness and the luminous efficiency graph of a relation of the organic electroluminescence device prepared of embodiment 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is further illustrated.
Refer to Fig. 1, the organic electroluminescence device 100 of an execution mode comprises the anode 10, hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34, the first electron transfer layer 36, charge generation layer 40, the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and the negative electrode 70 that stack gradually.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
Hole injection layer 20 is formed at anode 10 surfaces.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO 3), tungstic acid (WO 3) and vanadic oxide (V 2o 5) at least one, be preferably MoO 3.The thickness of hole injection layer 20 is 20nm ~ 80nm, is preferably 30nm.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the first hole transmission layer 32 is 20nm ~ 60nm, is preferably 40nm.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq 3) at least one, be preferably Alq 3.The thickness of luminescent layer 40 is 5nm ~ 40nm, is preferably 25nm.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TPBI.The thickness of the first electron transfer layer 36 is 40nm ~ 200nm, is preferably 50nm.
Charge generation layer 40 is formed at the surface of the first electron transfer layer 36.Described charge generation layer 40 comprises the p-type doped layer 44 that is laminated in the N-shaped doped layer 42 on the first electron transfer layer 36 surfaces and is formed at N-shaped doped layer 42 surfaces.
The material of N-shaped doped layer 42 comprises metal and is entrained in the electron transport material in metal.Metal is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au).The mass ratio of electron transport material and metal is 1:100 ~ 1:10.Electron transport material is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ), 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles (PBD) and N-aryl benzimidazole (TPBi).The thickness of N-shaped doped layer 42 is 5nm ~ 20nm.
The material of P type doped layer 44 comprises metal and is entrained in the ferric trichloride (FeCl in metal 3).Metal is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au).The mass ratio of ferric trichloride and metal is 1:50 ~ 1: 10.The thickness of p-type doped layer 44 is 1nm ~ 10nm.
The second hole transmission layer 52 is formed at the surface of P type doped layer 44.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of the second hole transmission layer 52 is 20nm ~ 60nm, is preferably 30nm.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq 3) at least one, be preferably Alq 3.The thickness of luminescent layer 40 is 5nm ~ 40nm, is preferably 25nm.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TPBI.The thickness of the second electron transfer layer 56 is 40nm ~ 200nm, is preferably 150nm.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) and lithium fluoride (LiF) at least one, be preferably CsN 3.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 2.5nm.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 70 is 60nm ~ 300nm, is preferably 150nm.
Above-mentioned organic electroluminescence device 100, N-shaped doped layer 42 can effectively improve electric transmission speed, improve conductivity and permeability, and the existence of metal can improve the power of regeneration of electronics simultaneously, reduces electronic injection potential barrier; P-type doped layer is by metal-doped ferric trichloride, there are a large amount of free electrons, the existence of ferric trichloride can improve the transmission in hole, the metal ion of metal and ferric trichloride can interact, improve the binding ability of nucleus, improve transmission performance, and the two-layer metal material that all adopts of charge generation layer, potential barrier difference between metal material is less, this has just reduced the contact potential between two-layer, be conducive to reduce the energy consumption between interface, improve regeneration efficiency, finally improve the luminous efficiency of organic electroluminescence device; Organic electroluminescence device 100 has two luminescence units simultaneously, thereby has brightness and luminous efficiency at double.
Be appreciated that other functional layers also can be set in this organic electroluminescence device 100 as required.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
Step S110, prepare hole injection layer 20, the first hole transmission layer 32, the first luminescent layer 34 and the first electron transfer layer 36 at anode surface successively evaporation.
Anode 10 is indium tin oxide glass (ITO), aluminium zinc oxide glass (AZO) or indium-zinc oxide glass (IZO), is preferably ITO.
In present embodiment, before anode 10 surfaces form hole injection layer 20, first antianode 10 carries out pre-treatment, pre-treatment comprises: anode 10 is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution on anode 10 surfaces.
Hole injection layer 20 is formed at the surface of anode 10.Hole injection layer 20 is prepared by evaporation.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO 3), tungstic acid (WO 3) and vanadic oxide (V 2o 5) at least one, be preferably MoO 3.The thickness of hole injection layer 20 is 20nm ~ 80nm, is preferably 40nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
The first hole transmission layer 32 is formed at the surface of hole injection layer 20.The first hole transmission layer 32 is prepared by evaporation.The material of the first hole transmission layer 32 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably TCTA.The thickness of the first hole transmission layer 32 is 20nm ~ 60nm, is preferably 40nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
The first luminescent layer 34 is formed at the surface of the first hole transmission layer 32.The first luminescent layer 34 is prepared by evaporation.The material of the first luminescent layer 34 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq 3) at least one, be preferably Alq 3.The thickness of luminescent layer 40 is 5nm ~ 40nm, is preferably 25nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
The first electron transfer layer 36 is formed at the surface of the first luminescent layer 32.The first electron transfer layer 36 is prepared by evaporation.The material of the first electron transfer layer 36 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TPBI.The thickness of the first electron transfer layer 36 is 40nm ~ 200nm, is preferably 50nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Step S120, prepare N-shaped doped layer 42 at the surperficial evaporation of the first electron transfer layer 36.
The material of N-shaped doped layer 42 comprises metal and is entrained in the electron transport material in metal.Metal is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au).The mass ratio of electron transport material and metal is 1:100 ~ 1:10.Electron transport material is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ), 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3,4-oxadiazoles (PBD) and N-aryl benzimidazole (TPBi).The thickness of N-shaped doped layer 42 is 5nm ~ 20nm.Metal and electron transport material evaporate respectively in two evaporation boats, and evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of metal is 1nm/s ~ 10nm/s, and the evaporation speed of electron transport material is 0.1nm/s ~ 1nm/s.
Step S130, prepare p-type doped layer 44 at the surperficial evaporation of N-shaped doped layer 42.
The material of P type doped layer 44 comprises metal and is entrained in the ferric trichloride (FeCl in metal 3).Metal is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au).The mass ratio of ferric trichloride and metal is 1:50 ~ 1:10.The thickness of p-type doped layer 44 is 1nm ~ 10nm.Metal and ferric trichloride evaporate respectively in two evaporation boats, and evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of metal is 1nm/s～10nm/s, and the evaporation speed of ferric trichloride is 0.1nm/s～1nm/s.
Step S140, prepare the second hole transmission layer 52, the second luminescent layer 54, the second electron transfer layer 56, electron injecting layer 60 and negative electrode 70 on P type doped layer 44 surfaces successively evaporation.
The second hole transmission layer 52 is formed at the surface of P type doped layer 44.The material of the second hole transmission layer 52 is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), 4,4', 4 " tri-(carbazole-9-yl) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4; at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of the second hole transmission layer 52 is 20nm ~ 60nm, is preferably 30nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
The second luminescent layer 54 is formed at the surface of the second hole transmission layer 52.The material of the second luminescent layer 54 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, 1'-biphenyl (BCzVBi) and 8-hydroxyquinoline aluminum (Alq 3) at least one, be preferably Alq 3.The thickness of luminescent layer 40 is 5nm ~ 40nm, is preferably 25nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
The second electron transfer layer 56 is formed at the surface of the second luminescent layer 52.The material of the second electron transfer layer 56 is selected from 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2, and at least one in 4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TPBI.The thickness of the second electron transfer layer 56 is 40nm ~ 200nm, is preferably 150nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s～1nm/s.
Electron injecting layer 60 is formed at the second electron transfer layer 56 surfaces.The material of electron injecting layer 60 is selected from cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) and lithium fluoride (LiF) at least one, be preferably CsN 3.The thickness of electron injecting layer 60 is 0.5nm～10nm, is preferably 2.5nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
Negative electrode 70 is formed at electron injecting layer 60 surfaces.The material of negative electrode 70 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 70 is 60nm ~ 300nm, is preferably 150nm.Evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 1nm/s ~ 10nm/s.
Above-mentioned organic electroluminescence device preparation method, technique is simple, and the luminous efficiency of the organic electroluminescence device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method of organic electroluminescence device provided by the invention is elaborated.
The preparation used of the embodiment of the present invention and comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 test electric property of Keithley company of the U.S., CS-100A colorimeter test brightness and the colourity of Japanese Konica Minolta company.
Embodiment 1
Structure prepared by the present embodiment is ITO/MoO 3/ TCTA/Alq 3/ TPBi/Pt:Bphen/Ag:FeCl 3/ NPB/Alq 3/ TPBi/CsN 3the organic electroluminescence device of/Ag.
First ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Evaporation hole injection layer, material is MoO 3, thickness is 30nm; Evaporation the first hole transmission layer, material is TCTA, thickness is 40nm; Evaporation the first luminescent layer, material is Alq 3, thickness is 25nm; Evaporation the first electron transfer layer, material is TPBI, thickness is 50nm; Evaporating n type doped layer, material comprises Pt and is entrained in the Bphen in Pt, the mass ratio 1:250 of Bphen and Pt, thickness is 10nm; Evaporation p-type doped layer, material comprises Ag and is entrained in the FeCl in Ag 3, FeCl 3with the mass ratio of Ag be 1:20, thickness is 8nm; Evaporation the second hole transmission layer, material is NPB, thickness is 30nm; Evaporation the second luminescent layer, material is Alq 3, thickness is 25nm; Evaporation the second electron transfer layer, material is TPBI, thickness is 150nm; Evaporation electron injecting layer, material is CsN 3, thickness is 2.5nm; Evaporation negative electrode, material is Ag, thickness is 150nm.Finally obtain needed electroluminescent device.Evaporation is 8 × 10 at vacuum pressure -4under Pa, carry out, organic material evaporation speed is 0.2nm/s, FeCl 3evaporation speed be 0.5nm/s, the evaporation speed of metal is 6nm/s.
Refer to Fig. 3, the structure that is depicted as preparation in embodiment 1 is ITO/MoO 3/ TCTA/Alq 3/ TPBi/Pt:Bphen/Ag:FeCl 3/ NPB/Alq 3/ TPBi/CsN 3the organic electroluminescence device (curve 1) of/Ag is ITO/MoO with structure prepared by comparative example 3/ TCTA/Alq 3/ TPBi/CsN 3the brightness of the organic electroluminescence device (curve 2) of/Ag and the relation of luminous efficiency.In the organic electroluminescence device that in organic electroluminescence device prepared by comparative example, each layer thickness is prepared with embodiment 1, each layer thickness is identical.
As seen from Figure 3, under different brightness, all large than comparative example of the luminous efficiency of embodiment 1, the maximum lumen efficiency of organic electroluminescence device prepared by embodiment 1 is 7.1lm/W, and the luminous efficiency of organic electroluminescence device prepared by comparative example is only 4.8lm/W, and the luminous efficiency of comparative example along with the increase of brightness fast-descending, this explanation, charge generation layer is made up of N-shaped doped layer and P type doped layer, can effectively improve electric transmission speed, improve conductivity and permeability simultaneously, p-type doped layer improves the transmission in hole, improve the binding ability of nucleus, reduce the contact potential between two-layer, improve regeneration efficiency, this charge generation layer can effectively improve the luminous efficiency of organic electroluminescence device.
The luminous efficiency of the organic electroluminescence device that below prepared by each embodiment is all similar with embodiment 1, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is AZO/V 2o 5/ NPB/ADN/TPBi/Au:PBD/Au:FeCl 3/ TCTA/ADN/TAZ/CsN 3the organic electroluminescence device of/Pt.
First AZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is V 2o 5, thickness is 80nm; Evaporation is prepared the first hole transmission layer, and material is NPB, and thickness is 60nm; Evaporation is prepared the first luminescent layer, and material is ADN, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is TPBi, and thickness is 200nm; Evaporating n type doped layer, material comprises Au and is entrained in the PBD in Au, the mass ratio 1:100 of PBD and Au, thickness is 20nm; Evaporation p-type doped layer, material comprises Au and is entrained in the FeCl in Au 3, FeCl 3with the mass ratio of Au be 1: 10, thickness is 1nm; Then evaporation the second hole transmission layer, material is TCTA, thickness is 20nm; Evaporation is prepared the second luminescent layer, and material is ADN, and thickness is 7nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsN 3, thickness is 0.5nm; Evaporation is prepared negative electrode, and material is Pt, and thickness is 60nm, finally obtains needed electroluminescent device.Evaporation is 5 × 10 at vacuum pressure -3under Pa, carry out, organic material evaporation speed is 0.1nm/s, FeCl 3evaporation speed be 0.1nm/s, the evaporation speed of metal is 10nm/s.
Embodiment 3
Structure prepared by the present embodiment is IZO/WO 3/ TAPC/BCzVBi/Bphen/Ag:TPBi/Al:FeCl 3the organic electroluminescence device of/TCTA/BCzVBi/Bphen/CsF/Al.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is WO 3, thickness is 20nm; Evaporation is prepared the first hole transmission layer, and material is TAPC, and thickness is 30nm; Evaporation is prepared the first luminescent layer, and material is BCzVBi, and thickness is 40nm; Evaporation is prepared the first electron transfer layer, and material is Bphen, and thickness is 200nm; Evaporating n type doped layer, material comprises Ag and is entrained in the TPBi in Ag, the mass ratio 1:10 of TPBi and Ag, thickness is 5nm; Evaporation p-type doped layer, material comprises Al and is entrained in the FeCl in Al 3, FeCl 3with the mass ratio of Al be 1:40, thickness is 2nm; Evaporation is prepared the second hole transmission layer, and material is TCTA, and thickness is 60nm; Evaporation is prepared the second luminescent layer, and material is BCzVBi, and thickness is 30nm; Evaporation is prepared the second electron transfer layer, and material is Bphen, and thickness is 40nm; Evaporation is prepared electron injecting layer, and material is CsF, and thickness is 10nm; Evaporation is prepared negative electrode, and material is Al, and thickness is 300nm, finally obtains needed electroluminescent device.Evaporation is 2 × 10 at vacuum pressure -4under Pa, carry out, organic material evaporation speed is 1nm/s, FeCl 3evaporation speed be 1nm/s, the evaporation speed of metal is 1nm/s.
Embodiment 4
Structure prepared by the present embodiment is IZO/MoO 3/ TCTA/DCJTB/Bphen/Al:TAZ/Pt:FeCl 3/ NPB/DCJTB/TAZ/Cs 2cO 3the organic electroluminescence device of/Au.
First IZO substrate of glass is used to liquid detergent successively, deionized water, ultrasonic 15min, the organic pollution of removal glass surface; Evaporation is prepared hole injection layer, and material is MoO 3, thickness is 30nm; Evaporation is prepared the first hole transmission layer, and material is TCTA, and thickness is 50nm; Evaporation is prepared the first luminescent layer, and material is DCJTB, and thickness is 5nm; Evaporation is prepared the first electron transfer layer, and material is Bphen, and thickness is 40nm; Evaporating n type doped layer, material comprises Al and is entrained in the TAZ in Al, the mass ratio 1.5:100 of TAZ and Al, thickness is 15nm; Evaporation p-type doped layer, material comprises Pt and is entrained in the FeCl in Pt 3, FeCl 3with the mass ratio of Pt be 1:50, thickness is 10nm; Evaporation is prepared the second hole transmission layer, and material is NPB, and thickness is 50nm; Evaporation is prepared the second luminescent layer, and material is DCJTB, and thickness is 5nm; Evaporation is prepared the second electron transfer layer, and material is TAZ, and thickness is 100nm; Evaporation is prepared electron injecting layer, and material is Cs 2cO 3, thickness is 2nm; Evaporation is prepared negative electrode, and material is Au, and thickness is 180nm, finally obtains needed electroluminescent device.Evaporation is 5 × 10 at vacuum pressure -4under Pa, carry out, organic material evaporation speed is 0.5nm/s, FeCl 3evaporation speed be 0.7nm/s, the evaporation speed of metal is 3nm/s.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic electroluminescence device, is characterized in that, comprises the anode stacking gradually, hole injection layer, the first hole transmission layer, the first luminescent layer, the first electron transfer layer, charge generation layer, the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode, described charge generation layer comprises the p-type doped layer that is laminated in the N-shaped doped layer on described the first electron transfer layer surface and is formed at described N-shaped doped layer surface, the material of described N-shaped doped layer comprises metal and is entrained in the electron transport material in described metal, the material of described p-type doped layer comprises metal and is entrained in the ferric trichloride in described metal, and described metal is selected from silver, aluminium, at least one in platinum and gold, described electron transport material is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1,3, at least one in 4-oxadiazoles and N-aryl benzimidazole, described in described N-shaped doped layer, the mass ratio of electron transport material and described metal is 1:100 ~ 1:10, and described in described p-type doped layer, the mass ratio of ferric trichloride and described metal is 1:50 ~ 1:10.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described N-shaped doped layer is 5nm ~ 20nm, and the thickness of described p-type doped layer is 1nm ~ 10nm.
3. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
4. organic electroluminescence device according to claim 1, it is characterized in that, the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine and N; N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
5. organic electroluminescence device according to claim 1, is characterized in that, the material of described the first electron transfer layer and described the second electron transfer layer is selected from 4,7-diphenyl-1,10-phenanthroline, 1,2, at least one in 4-triazole derivative and N-aryl benzimidazole.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Prepare hole injection layer, the first hole transmission layer, the first luminescent layer and the first electron transfer layer at anode surface successively evaporation;
Prepare N-shaped doped layer at described the first electron transfer layer surface evaporation, the material of described N-shaped doped layer comprises metal and is entrained in the electron transport material in described metal, described metal is selected from silver, aluminium, at least one in platinum and gold, described electron transport material is selected from 4, 7-diphenyl-1, 10-phenanthroline, 1, 2, 4-triazole derivative, 2-(4'-2-methyl-2-phenylpropane base)-5-(4'-xenyl)-1, 3, at least one in 4-oxadiazoles and N-aryl benzimidazole, described in described N-shaped doped layer, the mass ratio of electron transport material and described metal is 1:100 ~ 1:10, described metal and described electron transport material evaporate respectively in two evaporation boats, evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of described metal is 1nm/s ~ 10nm/s, and the evaporation speed of described electron transport material is 0.1nm/s ~ 1nm/s,
On described N-shaped doped layer surface, evaporation is prepared p-type doped layer, the material of described p-type doped layer comprises metal and is entrained in the ferric trichloride in described metal, described metal is selected from least one in silver, aluminium, platinum and gold, described metal and described ferric trichloride evaporate respectively in two evaporation boats, and evaporation is 5 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, the evaporation speed of described metal is 1nm/s ~ 10nm/s, and the evaporation speed of described ferric trichloride is 0.1nm/s ~ 1nm/s; And
Form the second hole transmission layer, the second luminescent layer, the second electron transfer layer, electron injecting layer and negative electrode on p-type doped layer surface successively evaporation.
7. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: the material of described the first luminescent layer and described the second luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: the material of described the first hole transmission layer and described the second hole transmission layer is selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, 4,4', 4 " tri-(carbazole-9-yl) triphenylamine and N, N '-(1-naphthyl)-N; N '-diphenyl-4, at least one in 4 '-benzidine.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: the thickness of described N-shaped doped layer is 5nm ~ 20nm, and the thickness of described p-type doped layer is 1nm ~ 10nm.
10. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: before described anode surface forms hole injection layer, first antianode carries out pre-treatment, pre-treatment comprises: anode is carried out to photoetching treatment, be cut into needed size, adopt liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution of anode surface.
CN201310039163.6A 2013-01-31 2013-01-31 Organic light-emitting device and method for manufacturing same Pending CN103972409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310039163.6A CN103972409A (en) 2013-01-31 2013-01-31 Organic light-emitting device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310039163.6A CN103972409A (en) 2013-01-31 2013-01-31 Organic light-emitting device and method for manufacturing same

Publications (1)

Publication Number Publication Date
CN103972409A true CN103972409A (en) 2014-08-06

Family

ID=51241683

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310039163.6A Pending CN103972409A (en) 2013-01-31 2013-01-31 Organic light-emitting device and method for manufacturing same

Country Status (1)

Country Link
CN (1) CN103972409A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122275A (en) * 2021-11-26 2022-03-01 电子科技大学中山学院 Transition metal chloride near-ultraviolet light-emitting device and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070046189A1 (en) * 2005-08-31 2007-03-01 Eastman Kodak Company Intermediate connector for a tandem OLED device
CN101222023A (en) * 2007-01-12 2008-07-16 三星电子株式会社 White organic light emitting device
CN101447555A (en) * 2008-12-29 2009-06-03 中国科学院长春应用化学研究所 Laminated organic electro-luminescent device of an organic semiconductor-based hetero-junction electric-charge generating layer taken as a connecting layer and preparation method thereof
WO2012020650A1 (en) * 2010-08-10 2012-02-16 住友化学株式会社 Organic electroluminescent element and method of producing same
CN102891262A (en) * 2011-07-22 2013-01-23 海洋王照明科技股份有限公司 Lamination organic electroluminescent device and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070046189A1 (en) * 2005-08-31 2007-03-01 Eastman Kodak Company Intermediate connector for a tandem OLED device
CN101222023A (en) * 2007-01-12 2008-07-16 三星电子株式会社 White organic light emitting device
CN101447555A (en) * 2008-12-29 2009-06-03 中国科学院长春应用化学研究所 Laminated organic electro-luminescent device of an organic semiconductor-based hetero-junction electric-charge generating layer taken as a connecting layer and preparation method thereof
WO2012020650A1 (en) * 2010-08-10 2012-02-16 住友化学株式会社 Organic electroluminescent element and method of producing same
CN102891262A (en) * 2011-07-22 2013-01-23 海洋王照明科技股份有限公司 Lamination organic electroluminescent device and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114122275A (en) * 2021-11-26 2022-03-01 电子科技大学中山学院 Transition metal chloride near-ultraviolet light-emitting device and preparation method thereof

Similar Documents

Publication Publication Date Title
CN103972413A (en) Organic light-emitting device and production method thereof
CN103972420A (en) Organic light-emitting device and method for manufacturing same
CN104183738A (en) Organic electroluminescent device and preparation method thereof
CN104183778A (en) Organic electroluminescent device and preparation method thereof
CN103972408A (en) Organic light-emitting device and method for manufacturing same
CN103972421A (en) Organic light-emitting device and production method thereof
CN104183732A (en) Organic light emitting device and manufacturing method thereof
CN104253228A (en) Organic light emitting diode and preparation method thereof
CN103972409A (en) Organic light-emitting device and method for manufacturing same
CN104051642A (en) Laminated organic electroluminescent device and manufacturing method thereof
CN104253243A (en) Organic electroluminescent device and preparation method thereof
CN104051641A (en) Laminated organic electroluminescent device and manufacturing method thereof
CN103972411A (en) Organic light-emitting device and production method thereof
CN104078568A (en) Organic light-emitting diode and preparation method thereof
CN104183777A (en) Organic light emitting device and manufacturing method thereof
CN104183731A (en) Organic light emitting device and manufacturing method thereof
CN104183740A (en) Organic electroluminescent device and preparation method thereof
CN103972412A (en) Organic light-emitting device and method for manufacturing same
CN104078575A (en) Organic light-emitting diode and preparation method thereof
CN104183739A (en) Organic electroluminescent device and preparation method thereof
CN103972417A (en) Organic light-emitting device and production method thereof
CN103824956A (en) Organic electroluminescent device and preparation method thereof
CN103972404A (en) Organic light-emitting device and production method thereof
CN103972410A (en) Organic light-emitting device and production method thereof
CN104253229A (en) Organic light-emitting device and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140806