CN102945784B - dry etching uniformity optimization device and method - Google Patents
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- CN102945784B CN102945784B CN201210458930.2A CN201210458930A CN102945784B CN 102945784 B CN102945784 B CN 102945784B CN 201210458930 A CN201210458930 A CN 201210458930A CN 102945784 B CN102945784 B CN 102945784B
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- 238000001312 dry etching Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000005457 optimization Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000002093 peripheral effect Effects 0.000 claims abstract description 14
- 210000004027 cell Anatomy 0.000 claims description 145
- 238000000605 extraction Methods 0.000 claims description 16
- 206010001928 Amenorrhoea Diseases 0.000 claims description 8
- 210000004180 plasmocyte Anatomy 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000003190 augmentative effect Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The invention provides a kind of dry etching uniformity optimization device and method, relate to lithographic technique field, solve prior art needs to generate a large amount of resolution chart before substrate batch etching, causes etching the high problem of cost.The device of this dry etching uniformity optimization comprises: reative cell, be arranged at the electric pole plate in reative cell and lower electrode plate, this device also comprises: plasma density checkout gear, be arranged at the center and peripheral place of reative cell, for the plasma density at the center and peripheral place of detection reaction room; Control device, for obtaining the density of the plasma at the reative cell center and peripheral place that plasma density checkout gear detects, and when the plasma density of center is not equal to the plasma density of edge, the parameter of direct adjustment reative cell, with the plasma density making the plasma density of center equal edge.
Description
Technical field
The present invention relates to lithographic technique field, particularly relate to dry etching uniformity optimization device and method.
Background technology
Etching is an important step in semiconductor fabrication process, microelectronics IC (Integratecircuit, integrated circuit) manufacturing process, is a kind of main technique of the graphical treatment be associated with photoetching, comprises dry etching and wet etching.
Wherein, dry etching produces with gas glow discharge the technology that plasma carries out thin film removing, and Fig. 1 shows the sectional structure chart of existing dry etching device, mainly comprises reative cell 12, is arranged at the electric pole plate 13 in reative cell 12 and lower electrode plate 15.Electric pole plate 13 has air vent hole 17, for passing into gas in reative cell 12.Lower electrode plate 15 is provided with the base station 16 placing substrate.Source power generator 11 is electrically connected with electric pole plate 13, for providing source power, produces plasma with the gas in provocative reaction room 12.Bias power generator 14 is electrically connected with lower electrode plate 15, for providing bias power, to form electrical potential difference between lower electrode plate 15 and electric pole plate 13, thus impelling plasma to move downward, etching substrate.
In the process using above-mentioned dry etching device; the density distribution that often there will be reaction chamber piasma is uneven; this can make the etch rate of diverse location in reative cell different, the etch rate especially in the middle of reative cell and differing greatly between the etch rate at reative cell edge.Difference between this etch rate can bring a series of negative consequence.Especially, when carrying out ohmic contact layer etching in raceway groove, the uneven of etch rate remains the in uneven thickness of active layer by causing etching in rear raceway groove, thus affects the stability of TFT (thin-film transistor).When the area of glass substrate is larger, the control of etching homogeneity is just more important, if such as etching homogeneity controls bad, may be excessive due to etch rate at some panels of glass edge portion, cause the a-Si in the raceway groove of TFT to be carved, thus cause raceway groove to open a way (ChannelOpen).
In order to optimize etching homogeneity, prior art proposes a kind of method: first will collect the data such as the etching condition of etched features that needs to optimize etching homogeneity and critical size, determine optimal anchor direction, change initial etching condition and obtain one or more new etching condition, resolution chart is etched under each new etching condition, according to the pattern of resolution chart, deciding which condition is again optimal conditions, then parameter corresponding for this optimal conditions is applied in above-mentioned dry etching device, namely the parameter controlled in reative cell equals parameter corresponding to optimal conditions (distance as between electric pole plate and lower electrode plate), carry out batch etching.In this method, because the time generated early stage spent by resolution chart is too much, therefore considerably increase etching cost.Summary of the invention
Embodiments of the invention provide a kind of dry etching uniformity optimization device and method, and solve prior art needs to generate a large amount of resolution chart before substrate batch etching, cause etching the high problem of cost.
The device that a kind of dry etching uniformity is optimized, comprise reative cell, be arranged at the electric pole plate in described reative cell and lower electrode plate, also comprise: plasma density checkout gear, be arranged at the center and peripheral place of described reative cell, for detecting the plasma density at the center and peripheral place of described reative cell; Control device, for obtaining the density of the plasma at the described reative cell center and peripheral place that described plasma density checkout gear detects, and when the plasma density of described center is not equal to the plasma density of described edge, the parameter of the described reative cell of direct adjustment, with the plasma density making the plasma density of described center equal described edge.
Preferably, the center of described electric pole plate is provided with center roof vent, and the edge of described electric pole plate is provided with first group of rim vent and second group of rim vent; Described control device comprises mass flow controller, for passing into gas from described center roof vent, the first rim vent, the second rim vent in described reative cell, and alternately control the gas flow through described first group of rim vent and second group of rim vent.
Wherein, described control device comprises lifting unit, for when the plasma density of described center is greater than the plasma density of described edge, described electric pole plate is declined along the inwall of described reative cell; When the plasma density of described center is less than the plasma density of described edge, described electric pole plate is made to increase along the inwall of described reative cell.
Preferably, the device that described dry etching uniformity is optimized, also comprises the pressure sensor be arranged in described reative cell; Described control device comprises self-adaptive pressure controller, for obtaining the gas pressure that described pressure sensor detects; And when the plasma density of described center is greater than the plasma density of described edge, increase the extraction amount of gas in described reative cell or the supply reducing gas in described reative cell, to reduce the gas pressure in described reative cell; When the plasma density of described center is less than the plasma density of described edge, reduce the extraction amount of gas in described reative cell or the supply increasing gas in described reative cell, to increase the gas pressure in described reative cell.
A kind of dry etching uniformity optimization method, comprising: utilizing in the process that in dry etching device reative cell, plasma etches the substrate in described reative cell, obtains the density of the described plasma at described reative cell center and peripheral place; When the plasma density of described center is not equal to the plasma density of described edge, directly adjust the parameter of described reative cell, with the plasma density making the plasma density of described center equal described edge.
Preferably, the parameter of the described reative cell of described adjustment specifically comprises the steps: when an etching substrate, by the center roof vent on the electric pole plate of described mass flow controller in described reative cell, the first rim vent and pass into gas to described reative cell, and close the gas flow of the second rim vent on the electric pole plate in reative cell described in amenorrhoea; The difference of the described center in acquisition etching process and the plasma density of described edge, regulates the predetermined amount of flow of described second rim vent according to described difference; When etching next substrate, by described mass flow controller through described center roof vent, the second rim vent and pass into described gas, and close the gas flow of the first rim vent described in amenorrhoea; The difference of the described center in acquisition etching process and the plasma density of described edge, regulates the predetermined amount of flow of described first rim vent according to described difference.
Wherein, the parameter of the described reative cell of described adjustment specifically comprises: adjust the distance between electric pole plate and lower electrode plate in described reative cell, for when the plasma density of described center is greater than the plasma density of described edge, described electric pole plate is declined along the inwall of described reative cell; When the plasma density of described center is less than the plasma density of described edge, described electric pole plate is made to increase along the inwall of described reative cell.
Preferably, the parameter of the described reative cell of described adjustment specifically comprises: adjust the gas pressure in described reative cell, when the plasma density of described center is greater than the plasma density of described edge, increase the extraction amount of gas in described reative cell or the supply reducing gas in described reative cell, to reduce the gas pressure in described reative cell; When the plasma density of described center is less than the plasma density of described edge, reduce the extraction amount of gas in described reative cell or the supply increasing gas in described reative cell, to increase the gas pressure in described reative cell.
In the dry etching uniformity optimization device that the embodiment of the present invention provides and method, owing to utilizing in the process that in dry etching device reative cell, plasma etches the substrate in reative cell, the density of the plasma at reative cell center and peripheral place can be obtained, therefore in dry etching process when appearance reaction chamber piasma is uneven and when causing the situation about differing greatly between the etch rate at center and peripheral place in center and peripheral place density distribution, by adjusting the parameter of reative cell, the plasma density of center is made to equal the plasma density of edge, etching homogeneity can not only be made like this to be optimized, can also the real-time adjustment of realization response chamber piasma density.The time avoided in prior art spent by generation in early stage resolution chart is too much, causes the problem that etching cost increases greatly.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.
Fig. 1 is the cross-sectional view of dry etching device in prior art;
The flow chart of a kind of dry etching uniformity optimization method that Fig. 2 provides for the embodiment of the present invention;
The flow chart of a kind of dry etching uniformity optimization method that Fig. 3 provides for the embodiment of the present invention;
The structural representation of a kind of dry etching uniformity optimization device that Fig. 4 provides for the embodiment of the present invention;
The arrangement schematic diagram of air vent hole in a kind of dry etching uniformity optimization device that Fig. 5 provides for the embodiment of the present invention;
The structural representation of the another kind of dry etching uniformity optimization device that Fig. 6 provides for the embodiment of the present invention.Embodiment
Embodiments provide the device that a kind of dry etching uniformity is optimized, as shown in Figure 6, comprise reative cell 61, be arranged at the electric pole plate 611 in reative cell 61 and lower electrode plate 612, this device also comprises: plasma density checkout gear 62, be arranged at center 614 and edge 615 place of reative cell 61, for the plasma density at the center 614 and edge 615 place of detecting described reative cell 61; Control device 63, for obtaining the density of plasma at reative cell 61 center 614 that plasma density checkout gear 62 detects and edge 615 place, and when the plasma density of center 614 is not equal to the plasma density at edge 615 place, the parameter of direct adjustment reative cell 61, with the plasma density making the plasma density at described center 614 place equal edge 615 place.
In the dry etching uniformity optimization device that the embodiment of the present invention provides, owing to utilizing in the process that in dry etching device reative cell 61, plasma etches the substrate in reative cell 61, the density of the plasma at plasma density checkout gear 62 energy center, detection reaction room 61 614 and edge 615 place, therefore in dry etching process when to occur in the reative cell 61 that control device 63 gets plasma center 614 and edge 615 place density distribution uneven, during situation about differing greatly between the etch rate causing center 614 and edge 615 place, the parameter of reative cell 61 is directly adjusted by control device 63, the plasma density at center 614 place is made to equal the plasma density at edge 615 place, etching homogeneity can not only be made like this to be optimized, can also the real-time adjustment of plasma density in realization response room 61.The time avoided in prior art spent by generation in early stage resolution chart is too much, causes the problem that etching cost increases greatly.
In the dry etching uniformity optimization device that above-described embodiment provides, see Fig. 3, Fig. 4 and Fig. 5, the center of electric pole plate 611 is provided with center roof vent, and the edge of electric pole plate 611 can be provided with first group of rim vent A and second group rim vent B; Control device 63 can comprise mass flow controller 631, for passing into gas from center roof vent X, the first rim vent A, the second rim vent B in reative cell 61, and alternately control the gas flow through first group of rim vent A and second group rim vent B.
When an etching substrate, gas can be passed into by the center roof vent X on the electric pole plate 611 of mass flow controller 631 in reative cell 61, the first rim vent A in reative cell 61, and close the gas flow of the second rim vent B on amenorrhoea electric pole plate 611.Then obtain the difference of the plasma density of center 614 place in this etching process and edge, regulate the predetermined amount of flow of the second rim vent B according to this difference.
Owing to alternately controlling the gas flow through first group of rim vent A and second group rim vent B, therefore, when etching next substrate, mass flow controller 631 can be passed through, to reduce the possibility occurring center 614 place and edge 615 place plasma density difference.And close the gas flow of amenorrhoea first rim vent A, then obtain the difference of the plasma density at center 614 place in this etching process and edge 615 place, regulate the predetermined amount of flow of the first rim vent A according to this difference.
As in said process, due to the gas flow that alternately can control through first group of rim vent A and second group rim vent B by mass flow controller 631, and according to the performance of wherein one group of air vent hole, regulate the predetermined amount of flow of other one group of air vent hole, therefore at utmost lowly reduce the possibility occurring center 614 place and edge 615 place plasma density difference.And, alternately control the gas flow through first group of rim vent A and second group rim vent B, there is the relatively simple effect of programming operation.
But above-described embodiment is only preferred embodiment, in reality, the group number of rim vent is not limited to two groups, can also be more than one group or three groups.Such as, when one group of rim vent, mass flow controller 631 controls to pass into above-mentioned gas through rim vent and center roof vent X to reative cell 61 all the time, the difference of itself and above-described embodiment be to need when etching front substrate on edge once in etching process or center gas flow calculate, target flow in the next etching process calculated is temporary in buffer, in next etching process, exports to mass flow controller 631 again.And when three groups with upper vent hole, only need three groups and rotate.These changes are all the equivalent variations of the embodiment of above-mentioned two groups of air vent holes.
As an alternative, control device 63 can also comprise lifting unit 632, for when the plasma density at center 614 place is greater than the plasma density at edge 615 place, electric pole plate 611 is declined along the inwall of reative cell 61; When the plasma density at center 614 place is less than the plasma density at edge 615 place, electric pole plate 611 is made to increase along the inwall of reative cell 61.
When the plasma density at center 614 place is greater than the plasma density at edge 615 place, lifting unit 632 can make electric pole plate 611 decline along the inwall of reative cell 61, the plasma density at center 614 place is made to reduce like this, the plasma density at edge 615 place increases, thus makes the plasma density at center 614 place and edge 615 place equal.
When the plasma density at center 614 place is less than the plasma density at edge 615 place, lifting unit 632 can make electric pole plate 611 rise along the inwall of reative cell 61, the plasma density at center 614 place is made to increase like this, the plasma density at edge 615 place reduces, thus makes the plasma density at center 614 place and edge 615 place equal.
As an alternative, the pressure sensor 616 be arranged in reative cell 61 can also be comprised; Control device 63 can comprise self-adaptive pressure controller 633, for obtaining the gas pressure that pressure sensor 616 detects; When the plasma density at center 614 place is greater than the plasma density at edge 615 place, increase the extraction amount to gas in reative cell 61, or reduce the supply of gas in reative cell 61, to reduce the gas pressure in reative cell 61; When the plasma density at center 614 place is less than the plasma density at edge 615 place, reduce the extraction amount to gas in reative cell 61, or the supply of gas in augmenting response room 61, with the gas pressure in augmenting response room 61.
When the plasma density at center 614 place is greater than the plasma density at edge 615 place, self-adaptive pressure controller 633 can increase the extraction amount to gas in reative cell 61, or reduce the supply of gas in reative cell 61, to reduce the gas pressure in reative cell 61, the plasma density at center 614 place in reative cell 61 is reduced, and the plasma density at edge 615 place increases, thus make the plasma density at center 614 place and edge 615 place equal.
When the plasma density at center 614 place is less than the plasma density at edge 615 place, self-adaptive pressure controller 633 can reduce the extraction amount to gas in reative cell 61, or the supply of gas in augmenting response room 61, with the gas pressure in augmenting response room 61, the plasma density at center 614 place in reative cell 61 is increased, and the plasma density at edge 615 place reduces, thus make the plasma density at center 614 place and edge 615 place equal.
According to another preferred embodiment of the invention, the device of dry etching uniformity optimization can comprise more than two of scheme in the electric pole plate 611 of above-mentioned porous, lifting unit 632 and pressure sensor 616 and self-adaptive pressure controller 633.
Embodiments provide a kind of dry etching uniformity optimization method, as shown in Figure 2 and Figure 6, comprise the steps.
201, utilizing in the process that in dry etching device reative cell 61, plasma etches the substrate in reative cell 61, obtaining the density of the plasma at reative cell 61 center 614 and edge 615 place.
202, when the plasma density at center 614 place is not equal to the plasma density at edge 615 place, the parameter of adjustment reative cell 61, with the plasma density making the plasma density at center 614 place equal edge 615 place.
In a kind of dry etching uniformity optimization method that the embodiment of the present invention provides, owing to utilizing in the process that in dry etching device reative cell 61, plasma etches the substrate in reative cell 61, the density of the plasma at reative cell 61 center 614 and edge 615 place can be obtained, therefore in dry etching process when there is situation about differing greatly between center 614 and the uneven etch rate causing center 614 and edge 615 place of edge 615 place density distribution of plasma in reative cell 61, by directly adjusting the parameter of (need not resolution chart be generated) reative cell 61, the plasma density at center 614 place is made to equal the plasma density at edge 615 place, etching homogeneity can not only be made like this to be optimized, can also the real-time adjustment of plasma density in realization response room 61.The time avoided in prior art spent by generation in early stage resolution chart is too much, causes the problem that etching cost increases greatly.
In the dry etching uniformity optimization method that the embodiment of the present invention provides, as shown in Figure 3 and Figure 6, the parameter adjusting reative cell 61 specifically comprises the steps:
301, when an etching substrate, pass into gas by center roof vent X, the first rim vent A on the electric pole plate 611 of mass flow controller 631 in reative cell 61 to reative cell 61, and close the gas flow of the second rim vent B on the electric pole plate 611 in amenorrhoea reative cell 61.
The difference of center 614 place 302, in acquisition etching process and the plasma density at edge 615 place, regulates the predetermined amount of flow of the second rim vent B according to this difference.
303, when etching next substrate, passing into above-mentioned gas by mass flow controller 631 through center roof vent X, the second rim vent B, and closing the gas flow of amenorrhoea first rim vent A.
The difference of center 614 place 304, in acquisition etching process and the plasma density at edge 615 place, regulates the predetermined amount of flow of the first rim vent A according to this difference.
The method is described in detail in the device that above-described embodiment provides, therefore repeats no more.
Due to the gas flow that alternately can control through first group of rim vent A and second group rim vent B by mass flow controller 631, and according to the performance of wherein one group of air vent hole when an etching substrate, regulate the predetermined amount of flow of other one group of air vent hole during next substrate of etching, therefore at utmost lowly reduce the possibility occurring center 614 place and edge 615 place plasma density difference, thus improve etching homogeneity.
In the dry etching uniformity optimization method that the embodiment of the present invention provides, this step of parameter of adjustment reative cell 61 also can specifically comprise:
Distance in adjustment reative cell 61 between electric pole plate 611 and lower electrode plate 612, for when the plasma density at center 614 place is greater than the plasma density at place of edge 615, makes electric pole plate 611 decline along the inwall of reative cell 61; When the plasma density at center 614 place is less than the plasma density at edge 615 place, electric pole plate 611 is made to increase along the inwall of reative cell 61.
When in reative cell 61, plasma density center 614 place is greater than 615 place, edge, electric pole plate 611 can be made to decline along the inwall of reative cell 61, to reduce the distance in reative cell 61 between electric pole plate 611 and lower electrode plate 612, make between electric pole plate 611 and lower electrode plate 612, to form electrical potential difference to reduce, thus impel the plasma at center 614 place to move to reative cell 61 edge 615 place, and then make the plasma density at center 614 place in reative cell 61 and edge 615 place reach equal, therefore can improve etching homogeneity.
When in reative cell 61, plasma density center 614 place is less than 615 place, edge, electric pole plate 611 can be made to increase along the inwall of reative cell 61, with the distance in augmenting response room 61 between electric pole plate 611 and lower electrode plate 612, make between electric pole plate 611 and lower electrode plate 612, to form electrical potential difference to increase, thus impel edge 615 place plasma to move to reative cell 61 center 614 place, and then make the plasma density at center 614 place in reative cell 61 and edge 615 place reach equal, therefore can improve etching homogeneity.
In the dry etching uniformity optimization method that the embodiment of the present invention provides, this step of parameter of adjustment reative cell 61 also can specifically comprise:
Gas pressure in adjustment reative cell 61, when the plasma density at center 614 place is greater than the plasma density at edge 615 place, increase the extraction amount of gas in reative cell 61 or the supply reducing gas in reative cell 61, to reduce the gas pressure in reative cell 61; When the plasma density at center 614 place is less than the plasma density at edge 615 place, reduce the supply to gas in the extraction amount of gas in reative cell 61 or augmenting response room 61, with the gas pressure in augmenting response room 61.
When in reative cell 61, plasma density center 614 place is greater than 615 place, edge, can increase the extraction amount of gas in reative cell 61 or the gas supply that reduces in reative cell 61, reduce the gas pressure in reative cell 61, can spread to edge 615 place to make the gas at reative cell 61 center 614 place, edge 615 place gas flow is increased and center 614 place gas flow reduces, thus it is equal with edge 615 place plasma density to reach center 614 place gradually, and then improve etching homogeneity.
When in reative cell 61, plasma density center 614 place is less than 615 place, edge, can reduce the gas supply in the extraction amount of gas in reative cell 61 or augmenting response room 61, reduce the gas pressure in reative cell 61, concentrate to make gas Hui Xiang center 614 place at reative cell 61 edge 615 place, edge 615 place gas flow is reduced and center 614 place gas flow increases, thus it is equal with edge 615 place plasma density to reach center 614 place gradually, and then improve etching homogeneity.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (4)
1. a device for dry etching uniformity optimization, comprises reative cell, is arranged at the electric pole plate in described reative cell and lower electrode plate, it is characterized in that, also comprise:
Plasma density checkout gear, is arranged at the center and peripheral place of described reative cell, for detecting the plasma density at the center and peripheral place of described reative cell;
Control device, for obtaining the density of the plasma at the described reative cell center and peripheral place that described plasma density checkout gear detects, and when the plasma density of described center is not equal to the plasma density of described edge, the parameter of the described reative cell of direct adjustment, with the plasma density making the plasma density of described center equal described edge;
Wherein, the center of described electric pole plate is provided with center roof vent, and the edge of described electric pole plate is provided with first group of rim vent and second group of rim vent;
Described control device comprises mass flow controller, for passing into gas from described center roof vent, the first rim vent, the second rim vent in described reative cell, and alternately control the gas flow through described first group of rim vent and second group of rim vent;
The device of described dry etching uniformity optimization also comprises the pressure sensor be arranged in described reative cell;
Described control device comprises self-adaptive pressure controller, for obtaining the gas pressure that described pressure sensor detects; And when the plasma density of described center is greater than the plasma density of described edge, increase the extraction amount of gas in described reative cell or the supply reducing gas in described reative cell, to reduce the gas pressure in described reative cell; When the plasma density of described center is less than the plasma density of described edge, reduce the extraction amount of gas in described reative cell or the supply increasing gas in described reative cell, to increase the gas pressure in described reative cell.
2. the device of dry etching uniformity optimization according to claim 1, it is characterized in that, described control device comprises lifting unit, for when the plasma density of described center is greater than the plasma density of described edge, described electric pole plate is declined along the inwall of described reative cell; When the plasma density of described center is less than the plasma density of described edge, described electric pole plate is made to increase along the inwall of described reative cell.
3. utilize a dry etching uniformity optimization method for the device of described dry etching uniformity optimization as arbitrary in claim 1-2, it is characterized in that, comprising:
Utilizing in the process that in dry etching device reative cell, plasma etches the substrate in described reative cell, obtaining the density of the described plasma at described reative cell center and peripheral place;
When the plasma density of described center is not equal to the plasma density of described edge, directly adjust the parameter of described reative cell, with the plasma density making the plasma density of described center equal described edge;
Wherein, the parameter of the described reative cell of described adjustment specifically comprises the steps:
When an etching substrate, by the center roof vent on the electric pole plate of described mass flow controller in described reative cell, the first rim vent and pass into gas to described reative cell, and close the gas flow of the second rim vent on the electric pole plate in reative cell described in amenorrhoea;
The difference of the described center in acquisition etching process and the plasma density of described edge, regulates the predetermined amount of flow of described second rim vent according to described difference;
When etching next substrate, by described mass flow controller through described center roof vent, the second rim vent and pass into described gas, and close the gas flow of the first rim vent described in amenorrhoea;
The difference of the described center in acquisition etching process and the plasma density of described edge, regulates the predetermined amount of flow of described first rim vent according to described difference; The parameter of the described reative cell of described adjustment specifically comprises:
Adjust the gas pressure in described reative cell, when the plasma density of described center is greater than the plasma density of described edge, increase the extraction amount of gas in described reative cell or the supply reducing gas in described reative cell, to reduce the gas pressure in described reative cell; When the plasma density of described center is less than the plasma density of described edge, reduce the extraction amount of gas in described reative cell or the supply increasing gas in described reative cell, to increase the gas pressure in described reative cell.
4. dry etching uniformity optimization method according to claim 3, is characterized in that, the parameter of the described reative cell of described adjustment specifically comprises:
Adjust the distance between electric pole plate and lower electrode plate in described reative cell, for when the plasma density of described center is greater than the plasma density of described edge, described electric pole plate is declined along the inwall of described reative cell; When the plasma density of described center is less than the plasma density of described edge, described electric pole plate is made to increase along the inwall of described reative cell.
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| CN105097603B (en) * | 2014-04-30 | 2019-03-12 | 北京北方华创微电子装备有限公司 | The method of process environments in processing chamber detection device and characterization processes chamber |
| KR101921627B1 (en) * | 2017-06-16 | 2018-11-26 | 한국과학기술연구원 | Field effect transistor, biosensor comprising the same, method for manufacturing Field effect transistor, and method for manufacturing biosensor |
| CN113113283A (en) * | 2021-04-08 | 2021-07-13 | 中国科学院光电技术研究所 | Plasma density distribution regulation and control method based on air inlet distribution control |
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| CN101242704A (en) * | 2007-01-30 | 2008-08-13 | 应用材料股份有限公司 | A method of processing workpiece in a plasma reactor with variable height ground return path |
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