CN102931280A - Crystalline silicon solar cell diffusion emitter texturing process - Google Patents
Crystalline silicon solar cell diffusion emitter texturing process Download PDFInfo
- Publication number
- CN102931280A CN102931280A CN2012104548586A CN201210454858A CN102931280A CN 102931280 A CN102931280 A CN 102931280A CN 2012104548586 A CN2012104548586 A CN 2012104548586A CN 201210454858 A CN201210454858 A CN 201210454858A CN 102931280 A CN102931280 A CN 102931280A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- silicon solar
- nitrogen
- flow
- passing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystalline silicon solar cell diffusion emitter texturing process. The crystalline silicon solar cell diffusion emitter texturing process is characterized by comprising the following steps: sending felting silicon wafers to a diffusion reacting furnace pipe; guiding nitrogen, oxygen and nitrogen carried with phosphorus oxychloride gas into the diffusion reacting furnace pipe; raising the temperature of the diffusion reacting furnace pipe; maintaining a certain temperature and guiding the oxygen into the diffusion reacting furnace pipe; and guiding the nitrogen into the diffusion reacting furnace pipe, reducing the temperature. Thus, diffusion junctions are manufactured. The crystalline silicon solar cell diffusion emitter texturing process increases surface diffusion concentration of diffusion layers of the silicon wafers, reduces contact resistance of the silicon wafers and size, and reduces an inferior ratio of cell sintering.
Description
Technical field
The present invention relates to a kind of diffused emitter structure metallization processes, be mainly used in crystalline silicon conventional diffusion technology, specifically a kind of crystal silicon solar energy battery diffused emitter structure metallization processes.
Background technology
Along with the solar cell number of the enterprise significantly increases, the transformation efficiency of solar cell is one of most important index of client, and the client also has strict requirement to quality, the life-span of cell piece inherence.The diffusion junctions of conventional inside solar energy battery is owing to pursuing simply high efficiency, surface concentration is lower, very fastidious to the matching of producing the line sintering process, in a single day deviation appears in equipment or slurry, and namely can to cause behind the cell piece sintering forming in the subregion sintering bad, increased the series resistance of cell piece, this phenomenon can use the EL electroluminescence device to check out.Because this type of phenomenon will cause electrical performance of cell to reduce and the reduction of battery life.Have larger process window for keeping battery, can produce in batches with stable quality, the renewal of cell piece diffusion technology is an effective method.
Summary of the invention
The objective of the invention is to be easy to produce the poor problem of cell piece sintering contact for present common diffusion technology and proposed a kind of crystal silicon solar energy battery diffused emitter structure metallization processes.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of crystal silicon solar energy battery diffused emitter structure metallization processes is characterized in that it may further comprise the steps:
(1) silicon chip of making herbs into wool is sent into diffusion reaction furnace tube, furnace tube temperature is heated to 750-810 ℃ in 10min, pass into simultaneously nitrogen flow 5-8slm, continues 3min;
(2) pass into nitrogen flow 3-7slm, oxygen flow 400-600sccm, nitrogen carry phosphorus oxychloride gas flow 1300-1700sccm, continue 10-16min;
(3) with the speed rising furnace tube temperature of 5 ℃ of per minutes to 840-850 ℃, passing into simultaneously nitrogen flow is 10-15slm;
(4) maintain the temperature at 820-850 ℃, passing into oxygen flow is 3-5slm, continues 10-16min;
(5) passing into nitrogen flow is 15-20slm, is cooled to 780 ℃, namely makes diffusion junctions.
The interior temperature of boiler tube is heated to 800 ℃ in the step of the present invention (1).
Passing into nitrogen flow in the step of the present invention (2) is 5slm, and the phosphorus oxychloride gas flow that oxygen flow 600sccm, nitrogen carry is 1400sccm.
Temperature constant is at 840 ℃ in the step of the present invention (5).Passing into oxygen flow is 4slm, and the duration is 15min.
Beneficial effect of the present invention: the used hair emitter-base bandgap grading structure method of the present invention has increased the silicon chip surface diffusion concentration, has reduced the contact resistance of silicon chip and slurry, reduces the bad ratio of cell piece sintering.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
Embodiment 1
A kind of crystal silicon solar energy battery diffused emitter structure metallization processes comprises following step: the silicon chip of making herbs into wool is sent into diffusion reaction furnace tube, and furnace tube temperature is heated to 800 ℃ in 10min, pass into simultaneously nitrogen flow 5.2slm, continues 3min; Pass into nitrogen flow 4slm, oxygen flow 500sccm, nitrogen carry phosphorus oxychloride gas flow 1500sccm, continue 15min; With the speed rising furnace tube temperature to 840 of 5 ℃ of per minutes ℃, passing into simultaneously nitrogen flow is 10slm; (4) maintain the temperature at 838 ℃, passing into oxygen flow is 4slm, continues 12min; Passing into nitrogen flow is 16slm, is cooled to 780 ℃, namely makes diffusion junctions.
Embodiment 2
A kind of crystal silicon solar energy battery diffused emitter structure metallization processes comprises following step: the silicon chip of making herbs into wool is sent into diffusion reaction furnace tube, and furnace tube temperature is heated to 790 ℃ in 10min, pass into simultaneously nitrogen flow 6.5slm, continues 3min; Pass into nitrogen flow 7slm, oxygen flow 400sccm, nitrogen carry phosphorus oxychloride gas flow 1350sccm, continue 11min; With the speed rising furnace tube temperature to 850 of 5 ℃ of per minutes ℃, passing into simultaneously nitrogen flow is 12slm; Maintain the temperature at 842 ℃, passing into oxygen flow is 3.1slm, continues 10min; Passing into nitrogen flow is 15slm, is cooled to 780 ℃, namely makes diffusion junctions.
Embodiment 3
A kind of crystal silicon solar energy battery diffused emitter structure metallization processes comprises following step: the silicon chip of making herbs into wool is sent into diffusion reaction furnace tube, and furnace tube temperature is heated to 800 ℃ in 10min, pass into simultaneously nitrogen flow 7.8slm, continues 3min; Pass into nitrogen flow 5slm, oxygen flow 600sccm, nitrogen carry phosphorus oxychloride gas flow 1760sccm, continue 13min; With the speed rising furnace tube temperature to 845 of 5 ℃ of per minutes ℃, passing into simultaneously nitrogen flow is 15slm; (4) maintain the temperature at 850 ℃, passing into oxygen flow is 5slm, continues 15min; Passing into nitrogen flow is 20slm, is cooled to 780 ℃, namely makes diffusion junctions.
Claims (4)
1. crystal silicon solar energy battery diffused emitter structure metallization processes is characterized in that it may further comprise the steps:
(1) silicon chip of making herbs into wool is sent into diffusion reaction furnace tube, furnace tube temperature is heated to 750-810 ℃ in 10min, pass into simultaneously nitrogen flow 5-8slm, continues 3min;
(2) pass into nitrogen flow 3-7slm, oxygen flow 400-600sccm, nitrogen carry phosphorus oxychloride gas flow 1300-1700sccm, continue 10-16min;
(3) with the speed rising furnace tube temperature of 5 ℃ of per minutes to 840-850 ℃, passing into simultaneously nitrogen flow is 10-15slm;
(4) maintain the temperature at 820-850 ℃, passing into oxygen flow is 3-5slm, continues 10-16min;
(5) passing into nitrogen flow is 15-20slm, is cooled to 780 ℃, namely makes diffusion junctions.
2. crystal silicon solar energy battery diffused emitter structure metallization processes according to claim 1 is characterized in that the interior temperature of boiler tube is heated to 800 ℃ in the step (1).
3. crystal silicon solar energy battery diffused emitter structure metallization processes according to claim 1 is characterized in that passing into nitrogen flow in the step (2) is 5slm, and the phosphorus oxychloride gas flow that oxygen flow 600sccm, nitrogen carry is 1400sccm.
4. crystal silicon solar energy battery diffused emitter structure metallization processes according to claim 1 is characterized in that temperature constant is at 840 ℃ in the step (5).Passing into oxygen flow is 4slm, and the duration is 15min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104548586A CN102931280A (en) | 2012-11-14 | 2012-11-14 | Crystalline silicon solar cell diffusion emitter texturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104548586A CN102931280A (en) | 2012-11-14 | 2012-11-14 | Crystalline silicon solar cell diffusion emitter texturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102931280A true CN102931280A (en) | 2013-02-13 |
Family
ID=47646038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104548586A Pending CN102931280A (en) | 2012-11-14 | 2012-11-14 | Crystalline silicon solar cell diffusion emitter texturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102931280A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103632934A (en) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102005502A (en) * | 2010-10-15 | 2011-04-06 | 苏州阿特斯阳光电力科技有限公司 | Method for improving phosphorus diffusion uniformity of solar cell |
-
2012
- 2012-11-14 CN CN2012104548586A patent/CN102931280A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102005502A (en) * | 2010-10-15 | 2011-04-06 | 苏州阿特斯阳光电力科技有限公司 | Method for improving phosphorus diffusion uniformity of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103632934A (en) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell |
| CN103632934B (en) * | 2013-11-29 | 2017-09-19 | 英利集团有限公司 | The Boron diffusion methods of N type silicon chips, crystal silicon solar energy battery and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102154708B (en) | Method for growing solar cell film | |
| CN103094366A (en) | Solar cell passivation antireflection film and preparation technology and method thereof | |
| CN109148643B (en) | Method for solving problem of efficiency reduction of PERC battery in ALD mode after electric injection or light injection | |
| CN102157606A (en) | Diffusion method used for crystalline silicon solar battery | |
| TW201030854A (en) | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation | |
| CN103632935A (en) | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell | |
| CN103632934A (en) | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell | |
| CN102925982B (en) | Solar cell and diffusion method of solar cell | |
| CN102903785A (en) | Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation | |
| CN106653939B (en) | A kind of thermal oxidation technology applied to crystal silicon solar batteries | |
| CN113604791B (en) | Based on BCl 3 Gas LPCVD boron doped amorphous silicon horizontal coating method and application | |
| CN108389933B (en) | high-concentration phosphorosilicate glass and high-sheet resistance diffusion method | |
| CN101980381B (en) | Crystalline silicon solar cell double-diffusion technology | |
| CN102386277B (en) | Multi-coating technology | |
| CN103413867B (en) | The diffusion method of solaode, solaode and preparation method thereof | |
| CN102931280A (en) | Crystalline silicon solar cell diffusion emitter texturing process | |
| CN105244412B (en) | A kind of passivating method of N-type crystal silicon battery boron emitter stage | |
| CN104037264B (en) | A kind of method that PECVD deposits low surface recombination solar cell dielectric layer | |
| CN102220568A (en) | Method for preparing silicon-nanoparticle-containing silicon nitride thin films | |
| CN114725239B (en) | Preparation method of heterojunction battery | |
| CN102899633B (en) | Preparation method of selective emitter battery mask | |
| CN105405924B (en) | A kind of preparation method of the high square resistance doping crystal silicon layer of crystal silica-based solar cell | |
| CN109873052A (en) | A kind of solar battery diffusion post growth annealing | |
| CN102383197B (en) | Method for processing substrates with process gas | |
| CN103715302A (en) | Low surface concentration diffusion method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130213 |