CN102931238A - Constant-current semiconductor element with Schottky barrier - Google Patents
Constant-current semiconductor element with Schottky barrier Download PDFInfo
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- CN102931238A CN102931238A CN2011102277157A CN201110227715A CN102931238A CN 102931238 A CN102931238 A CN 102931238A CN 2011102277157 A CN2011102277157 A CN 2011102277157A CN 201110227715 A CN201110227715 A CN 201110227715A CN 102931238 A CN102931238 A CN 102931238A
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Abstract
The invention relates to a constant-current semiconductor element, in particular to a constant-current semiconductor element which is manufactured by using a metal/semiconductor contact principle and provided with a Schottky barrier. First and second metal electrode tips are arranged on the surface of an N-type or P-type semiconductor epitaxial layer grown on a semi-insulating substrate, a first ohmic contact zone and a Schottky contact zone are arranged between the first metal electrode tip and the epitaxial layer, and a second ohmic contact zone is arranged between the second metal electrode tip and the epitaxial layer, so that the semiconductor element has the characteristics of the Schottky barrier and constant current and is low in starting voltage, and a plurality of isolated single bodies are easily combined into the constant-current semiconductor element suitable for high driving current in the manufacturing process.
Description
Technical field
The present invention is a kind of technology relevant with semiconductor, refer to especially a kind of utilize metal/semiconductor contact principle to make to possess the Schottky energy barrier (Schottky Barrier) decide the current semiconductor element, its structure/characteristic and Schottky diode be difference to some extent.
Background technology
With the made PN diode of semiconductor substrate, its basic principle is that P type and N type semiconductor base material are utilized the rear encapsulation of technology formation joint such as semiconductor diffusion, and is consisted of with electrode connection outside terminal respectively; More common behaviour in service is to utilize electric current to flow to the N-type district by p type island region to pass through easily, and the characteristic that rightabout is difficult for passing through is used as rectifier (Rectifier).In addition, it is unidirectional by electric current that Schottky diode is that the Schottky energy barrier that utilizes metal/semiconductor to engage also has, the characteristic that the other direction electric current is obstructed and do rectification and use.Particularly be used in AC power and convert DC power supply to, use with the electronic circuit that offers general electronic products.
Above-mentioned PN diode/Schottky diode is except as the rectifier, according to the difference on its function and the material characteristic, also be divided into and decide voltage diode (Zener Diode), switching diode (Switching Diode), photodiode (Photo Diode) etc.Again, light-emitting diode (LED, Light Emitting Diode) is widely used on each electronic product already to save the energy, compact characteristic; After LED develops high brightness (HI-POWER LED) technology in recent years, more have to replace traditional various illuminations with the trend of light-emitting devices, such as industrial, home lighting, traffic route etc., all can see the trace that LED uses.
In above-mentioned LED and the design of general application circuit, more commonly come led array done with constant voltage supply and decide voltage control, as long as when the power circuit output voltage meets the rated voltage of led array, can the driving LED array.Only led array has varying number and magnitude of voltage because of the difference of institute field of employment, must add that adaptive series limiting resistor is to limit the too high voltage of output to power circuit according to the LED amount of monomer, will cause power loss thus, and in led array, when having certain a part of LED monomer to damage, will cause global voltage reduction, electric current to strengthen and cause other LED monomers also to damage successively; In addition, constant voltage supply also often has the problem of flicker because voltage instability causes LED in use.
In order to overcome the problems referred to above, adopt in theory and decide the current and power supply control mode and be better than constant voltage supply control, but decide at present the execution mode of Current Control, mainly with the integrated circuit design integration composition of complexity, cost is very high; If the mode of deciding electric current with the two poles of the earth adopts complicated PN junction electric crystal planar technique and makes, not only yields not good enough, can't produce in a large number, and be not easy to produce than large-drive-current.
In view of this, the inventor accumulates for many years research and the practical experience of technical field of semiconductors, invents out a kind of " possess Schottky energy barrier (Schottky Barrier) decide current semiconductor element ", in the hope of improving the shortcoming of prior art.
Summary of the invention
The object of the present invention is to provide a kind of possess Schottky energy barrier (Schottky Barrier) decide the current semiconductor element, the characteristic that this semiconductor element possesses the Schottky energy barrier and decides electric current, not only have than low start voltage, and in its processing procedure easily with the isolation of several semiconductor element monomers, and long-pending body is combined into the mode of deciding the current semiconductor element or being designed to decide current semiconductor element arrays (Arrays) that is applicable to than large-drive-current and uses; Its structure/characteristic and Schottky diode be difference to some extent.
For reaching above-mentioned purpose, the present invention's " possess Schottky energy barrier (Schottky Barrier) decide current semiconductor element ", in N-type or P type semiconductor epitaxial layer (Epitaxial Layer) surface of growing up on semi-insulating substrate, be provided with can for first metal electric of electric connection extremely and the second metal electric extreme, wherein the first metal electric extremely with between the epitaxial layer includes one first and beats up nurse and contact (Ohmic Contact) section and a Schottky contacts (Schottky Contact) section, the second metal electric extremely with then be one second to beat up nurse and contact section between the above-mentioned epitaxial layer, and the Schottky contact region section is positioned at first, two beat up between the nurse contact section, beat up nurse and contact section and mutually isolate with second, make this semiconductor element possess the Schottky energy barrier than the characteristic of low start voltage at the Schottky contacts section position, and the thickness by this epitaxial layer, material, and first, distance design between two metal electrics are extreme and possess the function of current of deciding, and its structure/characteristic and Schottky diode difference to some extent.
The second execution mode of the present invention, in N-type or P type semiconductor epitaxial layer (Epitaxial Layer) surface of growing up on semi-insulating substrate, be provided with can for first metal electric of electric connection and mutually isolation extremely and the second metal electric extreme, and epitaxial layer is provided with a stage platform (Recessed Mesa) that is depression between first, second metal electric is extreme; Wherein the first metal electric extremely be one first to beat up nurse and contact (Ohmic Contact) section between epitaxial layer, and this first metal electric extremely extends to the stage platform along the epitaxial layer surface, and be a Schottky contacts (Schottky Contact) section between the stage platform, then be one second to beat up nurse and contact section between the second metal electrode and the epitaxial layer, and second beats up nurse contact section and the Schottky contacts section is isolated mutually, make this semiconductor element possess the Schottky energy barrier than the characteristic of low start voltage at the Schottky contacts section position, and the thickness by epitaxial layer, material and should the stage platform degree of depth or width design and possess the function of current of deciding, and its structure/characteristic and Schottky diode difference to some extent.
Above-mentioned when deciding the current semiconductor element and implementing, the first metal electric extremely reaches the second metal electric extremely can supply electric connection, therefore successive process can be fixed in semiconductor element on the support first, and by first, second metal electric extreme with support on terminal be electrically connected, then through chip package (Flip-Chip) and after cutting apart processing procedure, can form and decide current diode.Certainly, if first, second metal electric is extremely selected suitable material, directly exposing to the open air externally and use with the terminal as SMD (surface adhesion type element), also is one of feasible execution mode.
Except this, if in processing procedure directly a large tracts of land wafer will be above-mentioned a plurality of possess the Schottky energy barrier decide the each other monomer isolation (Isolation) of current semiconductor element, can utilize light shield in the processing procedure and camera technique design and amass body and be combined into and be applicable to decide the current semiconductor element than large-drive-current.Also can utilize support Design a plurality of possess the Schottky energy barrier decide the current semiconductor element, follow-up same can formation through chip package (Flip-Chip) decided current element array (Arrays), not only has the advantage such as save man-hour, manufacture and design easily, and construction surface radiating when using, so its thermal diffusivity is especially good, has the more largo scope of application.
Below further specify other embodiments of the present invention:
In the processing procedure, fix for the terminal electrical connection on convenient will described first, second metal electric extreme and the support reaches, can one soldered ball respectively be set respectively at first, second metal electrode end surfaces during enforcement.If as aforementioned when making first, second metal electric extremely directly expose to the open air externally using with the terminal as SMD (surface adhesion type element), soldered ball also can be used as SMT (surface adhering technical) and is welded in scolder on PC plate or other substrates.
In order to increase product yield, between described first, second metal electric is extreme an insulating protective layer can be set, in order to do guaranteeing the state of insulation of first, second metal electric between extreme.
In order to reach the above-mentioned large-scale effect of deciding current element and deciding current element array (Arrays), what allow a plurality of on the same wafer possess the Schottky energy barrier decides the each other monomer isolation (Isolation) of current semiconductor element, can bestow in the epitaxial layer both sides diffusion (Diffusion) processing procedure, to form separator.
In the processing procedure; for follow-up a plurality of current semiconductor elements of deciding that possess the Schottky energy barrier on the same wafer are cut apart processing procedure; can bestow in the epitaxial layer both sides high platform (Mesa) etch process with formation both sides isolated groove, and in the isolated groove of both sides, be filled with the formed one deck passive protection of the material layers (Passivation) such as glass (Glass) or oxide layer.
During enforcement, the formation of aforementioned stages platform can be therewith high (Mesa) etch process simultaneously or gradation carry out; The passive protection layer then can be implemented at same processing procedure or gradation with the aforementioned dielectric protective layer.
Compared to known technology, the present invention's " possess Schottky energy barrier (Schottky Barrier) decide current semiconductor element ", except possessing the Schottky energy barrier than low start voltage and deciding the characteristic of electric current, structure/characteristic and Schottky diode difference to some extent not only, and easily several semiconductor element monomers are isolated in its processing procedure, and long-pending body be combined into be applicable to than large-drive-current decide the current semiconductor element, therefore also have the man-hour of saving, the plurality of advantages such as manufacture and design easily; In use, because its construction surface radiating so its thermal diffusivity is especially good, has the more largo scope of application.
Description of drawings
Fig. 1 is the side sectional structure schematic diagram of first embodiment of the invention.
Fig. 2 is the side sectional structure schematic diagram of second embodiment of the invention.
The Schottky energy barrier reached the characteristic curve schematic diagram of deciding electric current when Fig. 3 was the invention process.
Fig. 4 is other execution mode structural representations of first embodiment of the invention.
Fig. 5 is other execution mode structural representations of second embodiment of the invention.
Description of reference numerals
The 100-semiconductor element; 100 '-semiconductor element; The semi-insulating substrate of 10-; The 20-epitaxial layer; 20 '-epitaxial layer; 21-stage platform; The 22-isolated groove; 23-passive protection layer; 30-the first metal electric is extreme; 31-first beats up nurse contact section; 32-Schottky contacts section; 40-the second metal electric is extreme; 41-second beats up nurse contact section; The 50-soldered ball; The 60-insulating protective layer; The 70-separator.
Embodiment
Following foundation technological means of the present invention lists and is suitable for embodiments of the present invention, and cooperate graphic explanation as after:
As shown in Figure 1, what the present invention possessed Schottky energy barrier (Schottky Barrier) decides current semiconductor element 100, in N-type or P type semiconductor epitaxial layer (Epitaxial Layer) 20 surfaces of growing up on semi-insulating substrate 10, being provided with can be for first metal electric extreme 30 and second metal electric extreme 40 of electric connection; Wherein, including one first between the first metal electric extreme 30 and the epitaxial layer 20 beats up nurse and contacts (Ohmic Contact) section 31 and a Schottky contacts (Schottky Contact) section 32, then be one second to beat up nurse and contact section 41 between described the second metal electric extreme 40 and the above-mentioned epitaxial layer 20, to make Schottky contacts section 32 be positioned at first, two beat up nurse contact section 31, between 41, and Schottky contacts section 32 and second is beaten up nurse and is contacted section 41 and mutually isolate, make this semiconductor element 100 possess the Schottky energy barrier than the characteristic of low start voltage in Schottky contacts section 32 positions, and the thickness by this epitaxial layer 20, material and first, two metal electrics extreme 30, distance design between 40 and possess the function of current of deciding, and its structure/characteristic and Schottky diode difference to some extent.
As shown in Figure 2, the semiconductor element 100 of the second execution mode of the present invention, in N-type or P type semiconductor epitaxial layer (Epitaxial Layer) 20 surfaces of growing up on semi-insulating substrate 10, being provided with can be extreme 40 for extreme 30 and second metal electrics of first metal electric of electric connection, and epitaxial layer 20 is provided with a stage platform (Recessed Mesa) 21 that is depression between first, second metal electric extreme 30,40; Wherein the first metal electric extreme 30 and 20 of epitaxial layers are one first to beat up nurse and contact (Ohmic Contact) section 31, and this first metal electric extreme 30 extends to stage platform 21 along epitaxial layer 20 surfaces, and is a Schottky contacts (Schottky Contact) section 32 between the stage platform 21; Then be one second to beat up nurse and contact section 41 between described the second metal electrode 40 and the epitaxial layer 20, and second beats up nurse contact section 41 isolates mutually with aforementioned Schottky contacts section 32, make this semiconductor element 100 possess the Schottky energy barrier than the characteristic of low start voltage in Schottky contacts section 32 positions, and the thickness by epitaxial layer 20, material and the degree of depth or width design that should stage platform 21 possess the function of current of deciding, and its structure/characteristic and Schottky diode difference to some extent.
Above-mentioned semiconductor element 100 possesses the Schottky energy barrier than the characteristic of low start voltage and decides function of current, its characteristic curve as shown in Figure 3:
When semiconductor element is in low voltage, present resistance characteristic between this section A two electrodes; Voltage because of the control Schottky, namely change the exhaustion region (Depletion Layer) under the Schottky energy barrier, the linear resistance property that begins during to VKP to transfer cuts off (cut-off) conductive conduits electric current and enters the saturated electric current I P (section B in the diagram) that decides; At this moment, distance between extreme by thickness, material and first and second metal electric of previous designs epitaxial layer 20, or the degree of depth of stage platform, width, can enter collapse (Breakdown) section C, the effect that then can reach aforementioned low start voltage (VKP) and decide electric current (IP) because of the design of Schottky energy barrier with voltage rising (VSP-VB) by the control characteristic curve.
Again, the invention described above possess Schottky energy barrier (Schottky Barrier) decide the current semiconductor element through the experiment really can reach effect, for example: aforementioned semi-insulating substrate adopts about resistance coefficient 20 Ω-cm, epitaxial layer to be about 2 Ω-cm thickness 10 μ m, the about 2 μ m of Schottky energy barrier width, the semiconductor element size is about 300-600 μ m X 300-600 μ m pros, then can make voltage between 10V-100V, about 20mA decide electric current half guiding element finished product.
Above-mentioned when deciding the current semiconductor element and implementing, the first metal electric extremely reaches the second metal electric extremely can supply electric connection, therefore successive process can be fixed in semiconductor element on the support first, and by first, second metal electric extreme with support on terminal be electrically connected, then through chip package (Flip-Chip) and after cutting apart processing procedure, can form and decide current diode.Certainly, if first, second metal electric is extremely selected suitable material, directly exposing to the open air externally and use with the terminal as SMD (surface adhesion type element), also is one of feasible execution mode; Described support, terminal, chip package, cut apart processing procedure and SMD etc. and all belong to known technology, do not give unnecessary details in addition at this.
Except this, if in processing procedure directly a large tracts of land wafer will be above-mentioned a plurality of possess the Schottky energy barrier decide the each other monomer isolation (Isolation) of current semiconductor element, can utilize light shield and camera technique design in the processing procedure and amass body and be combined into and be applicable to decide the current semiconductor element than large-drive-current.Also can utilize support Design a plurality of possess the Schottky energy barrier decide the current semiconductor element, follow-up same can formation through chip package (Flip-Chip) decided current element array (Arrays), not only has the advantage such as save man-hour, manufacture and design easily, and when using because the construction surface radiating, so its thermal diffusivity is especially good, has the more largo scope of application.
Below further specify other embodiments of the present invention:
Shown in Fig. 4,5, for convenient semiconductor element is fixed on the aforementioned brackets, can one soldered ball 50 respectively be set respectively on extreme 30,40 surfaces of first, second metal electric, in order to do utilizing soldered ball 50 and the terminal soldering on the support to fix, and electrical connection.If as aforementioned when making first, second metal electric extreme 30,40 directly expose to the open air externally using with the terminal as SMD (surface adhesion type element), soldered ball 50 also can be used as SMT (surface adhering technical) and is welded in scolder on PC plate or other substrates.
In the processing procedure, in order to increase product yield, can between described first, second metal electric extreme 30,40, an insulating protective layer 60 be set during enforcement, in order to do the state of insulation that can guarantee between first, second metal electric extreme 30,40.
In the processing procedure, above-mentionedly large-scalely to decide current element and decide current element array (Arrays) processing procedure in order to reach, what allow a plurality of on the same wafer possess the Schottky energy barrier decides each other monomer isolation (Isolation) of current semiconductor element 100, can bestow in the both sides of epitaxial layer 20 diffusion (Diffusion) processing procedure, make two adjacent semiconductor elements 100,100 ' epitaxial layer 20, form separator 70 between 20 ', then separator 70 namely can allow two adjacent semiconductor elements 100,100 ' each other monomer isolation, be combined into and be applicable to decide the current semiconductor element than large-drive-current to reach aforementioned long-pending body, and through after the successive process, make be applicable to large electric current large-scale and decide current element and reach and decide current element array (Arrays).
As shown in Figure 1, 2; in the processing procedure; for follow-up a plurality of current semiconductor elements 100 of deciding that possess the Schottky energy barrier on the same wafer are cut apart processing procedure; can bestow in epitaxial layer 20 both sides high platform (Mesa) etch process to form both sides isolated groove 22; and in both sides isolated groove 22, be filled with the formed one deck passive protection of the material layers (Passivation) 23 such as glass (Glass) or oxide layer, so can form the passive protection effect in every semiconductor element 100 both sides after cutting apart processing procedure.
During enforcement, the formation of aforementioned stages platform 21 can be therewith high (Mesa) etch process simultaneously or gradation carry out; Passive protection layer 23 then can be implemented at same processing procedure or gradation with aforementioned dielectric protective layer 60, to save man-hour and manufacturing process.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and the spirit and the interior of scope that limit in claim can carry out many modifications, variation or equivalence to it, but they all will fall within the scope of protection of the present invention.
Claims (10)
- One kind possess the Schottky energy barrier decide the current semiconductor element, it is characterized in that, in N-type or a P type semiconductor epitaxial layer surface of growing up on semi-insulating substrate, be provided with for first metal electric of electric connection extremely and the second metal electric extreme, this first metal electric extremely with between the epitaxial layer includes one first and beats up nurse and contact section and a Schottky contacts section, the second metal electric extremely with then be one second to beat up nurse and contact section between the above-mentioned epitaxial layer, and described Schottky contact region section is positioned at first, two beat up between the nurse contact section, beat up nurse and contact section and mutually isolate with second.
- One kind possess the Schottky energy barrier decide the current semiconductor element, it is characterized in that, in N-type or a P type semiconductor epitaxial layer surface of growing up on semi-insulating substrate, be provided with for first metal electric of electric connection extremely and the second metal electric extreme, and epitaxial layer is provided with a stage platform that is depression between first, second metal electric is extreme; This first metal electric extremely be one first to beat up nurse and contact section between epitaxial layer, and this first metal electric extremely extends to the stage platform along the epitaxial layer surface, and be a Schottky contacts section between the stage platform, then be one second to beat up nurse and contact section between the second metal electrode and the epitaxial layer, and this second beat up nurse contact section and described Schottky contacts section is isolated mutually.
- 3. what possess as claimed in claim 2 the Schottky energy barrier decides the current semiconductor element, it is characterized in that the stage platform utilizes high platform etch process to form.
- 4. what possess as claimed in claim 1 or 2 the Schottky energy barrier decides the current semiconductor element, it is characterized in that first, second metal electric extremely further respectively arranges respectively a soldered ball on the surface.
- 5. what possess as claimed in claim 1 or 2 the Schottky energy barrier decides the current semiconductor element, it is characterized in that, between first, second metal electric is extreme an insulating protective layer is set further.
- 6. what possess as claimed in claim 1 or 2 the Schottky energy barrier decides the current semiconductor element, it is characterized in that the both sides of epitaxial layer further are provided with separator, makes in the processing procedure two adjacent each other monomer isolation of semiconductor element.
- 7. what possess as claimed in claim 6 the Schottky energy barrier decides the current semiconductor element, it is characterized in that separator is made of diffusion process.
- 8. what possess as claimed in claim 1 or 2 the Schottky energy barrier decides the current semiconductor element, it is characterized in that the both sides of epitaxial layer further are provided with isolated groove.
- 9. what possess as claimed in claim 8 the Schottky energy barrier decides the current semiconductor element, it is characterized in that, has been filled with one deck passive protection layer in the isolated groove.
- 10. what possess as claimed in claim 8 the Schottky energy barrier decides the current semiconductor element, it is characterized in that isolated groove utilizes high platform etch process to form.
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| CN2011102277157A CN102931238A (en) | 2011-08-10 | 2011-08-10 | Constant-current semiconductor element with Schottky barrier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109346405A (en) * | 2018-11-23 | 2019-02-15 | 江苏新广联半导体有限公司 | A kind of preparation method of GaN base SBD flip-chip |
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| US20080068868A1 (en) * | 2005-11-29 | 2008-03-20 | Advanced Analogic Technologies, Inc. | Power MESFET Rectifier |
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| US3535774A (en) * | 1968-07-09 | 1970-10-27 | Rca Corp | Method of fabricating semiconductor devices |
| GB1507061A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Semiconductors |
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| CN109346405A (en) * | 2018-11-23 | 2019-02-15 | 江苏新广联半导体有限公司 | A kind of preparation method of GaN base SBD flip-chip |
| CN109346405B (en) * | 2018-11-23 | 2021-12-03 | 江苏新广联科技股份有限公司 | Preparation method of GaN-based SBD flip chip |
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Application publication date: 20130213 |