CN102903721B - X-ray image sensing element and sensing module - Google Patents
X-ray image sensing element and sensing module Download PDFInfo
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- CN102903721B CN102903721B CN201110208546.2A CN201110208546A CN102903721B CN 102903721 B CN102903721 B CN 102903721B CN 201110208546 A CN201110208546 A CN 201110208546A CN 102903721 B CN102903721 B CN 102903721B
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Abstract
The invention provides a kind of X-ray image sensing element and sensing module.This sensing element includes: the first fluorescence coating and the second fluorescence coating, its incident illumination that is overlapped and that each provide X-ray light source has the energy absorption band being different in essence, to release the first fluorescence and the second fluorescence respectively, wherein this first fluorescence and the second fluorescence have different wave length；First optical diode, be arranged at this first and this second fluorescence coating relative to the opposite side of this light source side；And second optical diode, be arranged at this first and this second fluorescence coating relative to the opposite side of this light source side, wherein this first optical diode and this each self energy of the second optical diode sense this first fluorescence and this second fluorescence.
Description
Technical field
The present invention relates to a kind of X-ray image sensing element, and particularly relate to one and be applicable to dual energy radiograph technology
X-ray image sensing element.
Background technology
Chest radiographs is that in modern medicine, the radiological image of wide variety of technology, particularly chest can provide
About the diagnostic message that thoracic bone and soft tissue are a large amount of and important, such as can be used for detect about pulmonary, thoracic bone structure,
Epigastrium organ (upper abdominal organs), pulmonary artery structural, the skeleton such as intervertebral space of middle thoracic vertebra or soft tissue
Disease.
In existing breast radiation line camera technique, often can use dual energy radiograph (dual energy X-ray
Imaging) technology.The principle of dual energy radiograph be continuous print to twice X-ray of human exposure, this X-ray of twice be respectively height
Can X-ray and low energy X-ray.Owing to high-energy X-ray and low energy X-ray each have image in various degree for skeletal structure and soft tissue
Contrast, can get relatively sharp image for the image obtained by these two kinds of different-energies as image processing by computer,
Such as image can only present skeletal structure or only present soft tissue.
Existing X-ray image sensing element is usually the X-ray image sensing element of indirect type, and it only includes one in order to feel
The fluorescence coating of survey X-ray and an optical diode (photodiode).X-ray is absorbed by fluorescence coating after penetrating human body and releases
Fluorescence, the fluorescence released is absorbed by optical diode and is converted into electronic signal.
But, above-mentioned known X-ray image sensing element measured the image obtained still with dual energy radiograph technology
There is insoluble problem.In the period of twice irradiation, such as the displacement of X-ray light source or human body, will result in image processing
On exception, referred to as dynamic fuzzy (motion blur).Moreover, even if by X-ray light source and human body during twice irradiation completely
Fixing, beating of heart can still result in dynamic fuzzy.
Therefore, need development badly is that one is applicable to dual energy radiograph technology and can solve above-mentioned dynamic fuzzy and ask
The X-ray image sensing element of topic.
Summary of the invention
The present invention implements to provide a kind of X-ray image sensing element, including: the first fluorescence coating and the second fluorescence coating, it is mutual
Incident illumination that is overlapping and that provide X-ray light source respectively has the energy absorption band being different in essence, glimmering each to release first
Light and the second fluorescence, wherein this first fluorescence and the second fluorescence have different wave length；First optical diode, be arranged at this first and
This second fluorescence coating is relative to the opposite side of this light source side；And second optical diode, be arranged at this first and this second fluorescence
Layer relative to the opposite side of this light source side, wherein this first optical diode and this second optical diode be designed to each self-inductance measurement should
First fluorescence and this second fluorescence.
The embodiment of the present invention also provides a kind of X-ray image sensing module, including: substrate；Multiple X-ray image senses as the aforementioned
Survey element to be arranged on this substrate；Gate driver circuit, is electrically connected with these X-ray image sensing elements；And data-driven
Circuit, is electrically connected with these X-ray image sensing elements, and wherein this gate driver circuit and this data drive circuit can be according to sequential
Control the switch of each X-ray image sensing element.
For above and other purpose, feature and the advantage of the present invention can be become apparent, cited below particularly go out to be preferable to carry out
Example, and coordinate accompanying drawing, it is described in detail below:
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the X-ray sensing element according to the embodiment of the present invention.
Fig. 2 is the top view of the X-ray sensing element array according to the embodiment of the present invention.
Fig. 3～6 is the schematic diagram of the X-ray sensing element according to other various embodiments of the present invention.
Description of reference numerals
102～X-ray light source 104a～low energy X-ray
104b～high-energy X-ray 106～fluorescence coating
108～fluorescence coating 110～fluorescence
112～fluorescence 114～optical diode
116～semiconductor layer 118～electrode
120～electrode 122～optical diode
124～semiconductor layer 126～electrode
128～electrode 130～thin film transistor (TFT)
132～thin film transistor (TFT) 134～data wire
136～data wire 140～active circuit
150～colored filter 152～colored filter
160～colored filter
202～X-ray sensing element array
204～the data drive circuit of high-energy X-ray
206～the data drive circuit of low energy X-ray
208～grid circuit
Detailed description of the invention
Next the present invention will provide for many different embodiments to implement features different in the present invention.Each specific reality
Execute the composition in example and configuration will simplify the present invention following being described.These embodiments are not intended to limit the present invention.
Additionally, it is possible that the component symbol repeated is to simplify and describing in the various examples of this specification, but this does not represents
What specific association is had between each embodiment and/or diagram.Additionally, the first element is formed at the second element " top ", " it
On ", " under " or " on " can include that this first element in embodiment and the second element directly contact, or may also comprise this first
Other additional element are also had to make this first element and the second element without directly contact between element and the second element.
The embodiment of the present invention provides a kind of X-ray image sensing element, and it is applicable to dual energy radiograph technology, and only
An X-ray need to be irradiated, can obtain simultaneously be sensed, by high-energy X-ray and low energy X-ray, the image obtained, thus can avoid being had
The X-ray image of dynamic fuzzy problem.
Seeing Fig. 1, it shows the X-ray image sensing element according to the embodiment of the present invention and the schematic diagram of related elements thereof.
This X-ray image sensing element is can be the X-ray image sensing element of indirect type, its at least include two fluorescence coatings 106,108 and
Two optical diode detecting elements 114,122, fluorescence coating 106,108 absorbs low energy X-ray 104a after penetrating object and high energy X
Light 104b and excite discharging fluorescence, the fluorescence 110,112 released is absorbed by optical diode 114,112 and is converted into e-mail
Number, it is transferred in computer make image processing via thin film transistor (TFT) 130,132 and data wire 134,136, to obtain desired X
Optical image.
X-ray light source 102 can provide the dual energy X-ray needed for radiograph simultaneously.In an embodiment, X-ray light source 102 can be same
Time provide two energy ranges X-ray, such as low energy X-ray 104a and high-energy X-ray 104b.The energy range of low energy X-ray 104a can
Being about 40～90kVp, the energy range of high-energy X-ray 104b can be about 100～160kVp.Such as, this X-ray light source 102 can include
One or more vacuum tube, mercury lamp, synchrotron radiation light source or aforesaid combination.
Fluorescence coating 106,108 can be to overlap relative to X-ray light source 102, to have the extinction area of maximum.Such as,
As it is shown in figure 1, fluorescence coating 106 can overlap on fluorescence coating 108 (be i.e. arranged at fluorescence coating 108 and X-ray light source 102 it
Between).In an embodiment, fluorescence coating 106 can absorb the X-ray of at least some of energy range of low energy X-ray 104a, the most absorbable
Energy range X-ray between about 40～90kVp, and wave-length coverage can be released between about 350～the fluorescence of 580nm or phosphorescence
110 (describing for convenience, be the most all referred to as fluorescence 110), such as green glow.Fluorescence coating 106 can include such as CsI:Tl, CsI:
Na、CdWO4、YTaO4:Nb、Gd2O2S:Tb、Gd2O2S:Pr, Ce, F, CaWO4、CaHfO3:Ce、SrHfO3:Ce、BaHfO3:Ce、
NaI:Tl、LaCl3:Ce、LaBr3:Ce、Bi4Ge3O12、Lu2SiO5:Ce、Gd2SiO5:Ce、YAlO3:Ce、LuAlO3:Ce、
Lu2Si2O7: the fluorescence such as Ce or phosphor material.Fluorescence coating 108 can absorb at least some of energy range of high-energy X-ray 104b, example
If energy-absorbing scope is between about 100～the X-ray of 160kVp, and wave-length coverage can be released between about 600～the fluorescence of 800nm
Or phosphorescence 112 (describing for convenience, be the most all referred to as fluorescence 112), such as infrared light or near infrared light.Fluorescence coating 108 can
Including such as Gd3Ga5O12: Cr, Ce, Y1.34Gd0.6Eu0.06O3、Y1.34Gd0.6Pr0.06O3、Lu2O3: the fluorescence such as Eu, Tb or phosphorescence material
Material.Low energy X-ray 104a is mainly absorbed by fluorescence coating 106, although fluorescence coating 106 overlap sets by adjusting the thickness of fluorescence coating 106
Being placed on fluorescence coating 108, high-energy X-ray 104b still can penetrate fluorescence coating 106 and be absorbed hardly, gets enter into fluorescence coating 108
Fluorescence coating 108 is excited to give out light.The thickness of fluorescence coating 106 is about 50～150 μm, and the thickness of fluorescence coating 108 be about 150～
450μm。
Optical diode 114 and optical diode 122 be arranged at fluorescence coating 106,108 relative to another of X-ray light source 102
Side.As it is shown in figure 1, optical diode 114 may be disposed between the second fluorescence coating 108 and optical diode 122.Optical diode 114 can
It is located between electrode 118,120 including electrode 118,120 and semiconductor layer 116.Electrode 118,120 can include tin ash,
Zinc oxide, tin indium oxide (ITO), indium zinc oxide (IZO), antimony tin (ATO), the tin ash (FTO) of fluorine doped, mix the oxygen of aluminum
Change zinc (AZO) other suitable transparent conductive materials.Semiconductor layer 116 can include amorphous silicon layer, and its thickness can be about 0.5～2 μ
M, its light absorption range generally includes the wave-length coverage of fluorescence 110.Optical diode 122 can include electrode 126,128 and quasiconductor
Layer 124 is located between electrode 126,128.Semiconductor layer 124 can include polysilicon layer, and its thickness can be about 0.05～1 μm, its
Light absorption range generally includes the wave-length coverage of fluorescence 112.In the present embodiment, optical diode 114 can be rectilinear light two pole
Pipe, its electrode 118,120 is for be vertically disposed at semiconductor layer 124 over and under.Electrode 118 can for example, p-type electrode,
Electrode 120 can for example, n-type electrode.Apprehensible, position or the polarity of electrode 118 and 120 are the most interchangeable.Optical diode
122 can be horizontal optical diode, and its electrode 126,128 horizontally be arranged at the both sides of semiconductor layer 124.Electrode 126 can example
As for n-type electrode, electrode 128 can for example, p-type electrode, its position or polarity are the most interchangeable.
Optical diode 114 can be electrically connected to thin film transistor (TFT) 130 and data wire 134.Thin film transistor (TFT) is usually by grid
Pole electrode, active layer, source electrode drain electrode are formed, and it can control the electronic signal of optical diode as a switch
Transmission.Such as, thin film transistor (TFT) 130 can be as switch, the electricity being converted into after controlling to be absorbed fluorescence 110 by optical diode 114
Whether subsignal is transferred to data wire 134.Optical diode 122 can be electrically connected to thin film transistor (TFT) 132.Thin film transistor (TFT) 132
Can be as switch, whether the electronic signal being converted into after controlling to be absorbed fluorescence 112 by optical diode 122 is transferred to data wire
136.Thin film transistor (TFT) 130,132 can be electrically connected to same grid circuit, with open or close simultaneously thin film transistor (TFT) 130,
132, so that be transferred to data wire 134,136 by electronic signal produced by optical diode 114,122 simultaneously.Therefore, only
X-ray once need to be carried out irradiate, can obtain simultaneously be detected, by optical diode 114, low energy X-ray 104a obtained and sensed
Image and detected the high-energy X-ray 104b obtained by optical diode 122 and sensed the image obtained, it is to avoid known X-ray shadow
Dynamic fuzzy problem as sensing element.Furthermore, in the present embodiment, due to the polysilicon light that optical diode 122 is horizontal
Diode, it can form by low temperature polycrystalline silicon (low temperature poly-silicon, LTPS) technology, thus can be in system
Make in the technique of thin film transistor (TFT) 130,132 and formed in the lump.
Fig. 2 is shown as the X-ray sensing mould formed containing multiple formed arrays of X-ray image sensing element as shown in Figure 1
The top view of block.Multiple X-ray image sensing elements 202 are formed on substrate, and each X-ray sensing element includes at least two energy
Fluorescence coating that absorption region is different and two optical diode detecting elements.The data drive circuit 204 of high-energy X-ray, low energy X-ray
Data drive circuit 206 and grid circuit 208 are arranged at around X-ray sensing element array, according to each X-ray image sense of sequencing contro
Survey the switch of element 202, to obtain the X-ray image that X-ray image sensing element array is sensed.In an embodiment, high-energy X-ray
Drive circuit 204 and the data drive circuit 206 of low energy X-ray can be provided separately.In another embodiment, can be by high-energy X-ray
Drive circuit 204 and the data drive circuit 206 of low energy X-ray can merge and be set to drive circuit.
Fig. 3 shows the X-ray image sensing element according to another embodiment of the present invention and the schematic diagram of related elements thereof.At this
In embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The present embodiment and figure
The Main Differences of the embodiment shown in 1 be optical diode 122 be rectilinear optical diode.The shown optical diode of this enforcement
122 generally can be formed from the same material with the optical diode shown in Fig. 1.Such as, optical diode 122 includes electrode 126,128
And semiconductor layer 124 is located between electrode 126,128.Electrode 126 can include tin ash, zinc oxide, tin indium oxide
(ITO), indium zinc oxide (IZO), antimony tin (ATO), the tin ash (FTO) of fluorine doped, mix the zinc oxide (AZO) of aluminum, aforementioned
Combination or other suitable transparent conductive materials.Semiconductor layer 124 can include polysilicon layer, and its thickness can be about 0.05～1 μ
M, its light absorption range generally includes the wave-length coverage of fluorescence 112.In the present embodiment, optical diode 122 may be configured as
Rectilinear optical diode as optical diode 114, the electrode 126,128 of optical diode is for being vertically disposed at semiconductor layer 124
Over and under.Electrode 126 can for example, p-type electrode, electrode 128 can for example, n-type electrode.Apprehensible, electrode 126
And the position of 128 or polarity the most interchangeable.
Fig. 4 shows the X-ray image sensing element according to further embodiment of this invention and the schematic diagram of related elements thereof.At this
In embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The present embodiment and figure
The Main Differences of the embodiment shown in 1 is that optical diode 124 is directly electrically connected to active circuit 140.
Due to the molecular structure of the polysilicon ordered state in tube core, being neat and directive, therefore electronics moves
Dynamic speed is faster about 200～300 times than arranging mixed and disorderly non-crystalline silicon.Therefore, horizontal polysilicon optical diode 122 can be direct
It is electrically connected to active image element circuit 140 or becomes the part of 140 in active image element circuit.Active image element circuit can
For example, signal amplifier, thin film transistor (TFT), data wire, gate line or aforesaid combination.Horizontal polysilicon optical diode 122
Produced signal is transferred to data wire 136 after processing via active circuit 140 again.
Fig. 5 shows the X-ray image sensing element according to alternate embodiment of the present invention and the schematic diagram of related elements thereof.At this
In embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The present embodiment and figure
The Main Differences of the embodiment shown in 1 be optical diode 114 and optical diode 122 be horizontal row relative to fluorescence coating 106,108
Row.In an embodiment, the semiconductor layer 116,124 of optical diode 114,122 can be formed from the same material and have identical thickness
Degree, such as, can include amorphous silicon layer, and thickness can be between about 0.5～2 μm.Under this thickness, semiconductor layer 116 and 124 can
There is identical light absorption range, such as, can absorb the fluorescence that wavelength is between 300～600nm.In another embodiment, optical diode
114, the semiconductor layer 116,124 of 122 also can have different thickness, but has the light absorption range of overlap.Colored filter 150
May be disposed between optical diode 114 and fluorescence coating 108, the fluorescence 112 excited by high-energy X-ray 104b with filtration.Colored filter
Mating plate 152 may be disposed between optical diode 122 and fluorescence coating 108, the fluorescence 110 excited by low energy X-ray 104a with filtration.
Therefore, optical diode 114 only can detect the fluorescence 110 excited by low energy X-ray 104a, and optical diode 122 only can detect
The fluorescence 112 excited by high-energy X-ray 104b.Only need to irradiate an X source, can obtain from low energy X-ray 104a simultaneously and
High-energy X-ray 104b irradiates the image obtained.
Such as, in a particular embodiment, low energy X-ray 104a excite fluorescence coating 106 to release blue-fluorescence (such as wavelength is about
420nm) 110, high-energy X-ray 104b excite fluorescence coating 108 to release green fluorescence (such as wavelength about 550nm) 112.Optical diode
The semiconductor layer 116 of 114 and the semiconductor layer 124 of optical diode 122 are the amorphous silicon layer that thickness is 0.5～2 μm, have wider
Light absorption range, such as can absorb blue light and green glow simultaneously.Colored filter 150 may filter that all ripples in addition to blue light
Long, colored filter 152 then may filter that all wavelengths in addition to green glow.Therefore, optical diode 114 only can detect by low
Can the blue-fluorescence 110 that excited of X-ray 104a, and optical diode 122 only can detect obtain by high-energy X-ray 104b excited green
Color fluorescence 112.
Additionally, due to optical diode 114 and the structure of optical diode 122 and material are substantially the same, and for flatly to arrange
Row, therefore optical diode 114 and 122 may be formed on same substrate and completes in the lump with same technique.Colored filter 150,
152 can be in being arranged on optical diode 114 and 122 the most again.
Fig. 6 shows the X-ray image sensing element according to another alternate embodiment of the present invention and the schematic diagram of related elements thereof.
In this embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The present embodiment
The semiconductor layer that Main Differences is optical diode 114 116 and the semiconductor layer of optical diode 122 with the embodiment shown in Fig. 1
124 for being formed from the same material, but has different-thickness.Such as, the semiconductor layer 116,124 of optical diode 114,122 all may be used
Including amorphous silicon layer.In an embodiment, the thickness of the semiconductor layer 116 of optical diode 114 can be 1～2 μm, optical diode 122
The thickness of semiconductor layer 124 can be 0.1～0.5 μm, the thickness of semiconductor layer 124 can be thin compared with the thickness of semiconductor layer 116, and
The absorption region of semiconductor layer 124 can include the absorption region of at least one of semiconductor layer 116.Colored filter 160 can
Being arranged between optical diode 114 and the second fluorescence coating 108, it may filter that the fluorescence 112 excited by high-energy X-ray 104b.Cause
This, optical diode 114 only can detect the fluorescence 110 excited by low energy X-ray 104a, optical diode 122 only can detect by
The fluorescence 112 that high-energy X-ray 104b is excited.Only need to irradiate an X source, can obtain from low energy X-ray 104a and height simultaneously
The image obtained can be irradiated by X-ray 104b.
Such as, in a particular embodiment, low energy X-ray 104a excite fluorescence coating 106 to release green fluorescence (such as wavelength is about
550nm) 110, high-energy X-ray 104b excite to fluorescence coating 108 and release blue-fluorescence (such as wavelength about 420nm) 112.Optical diode
The semiconductor layer 116 of 114 is 0.1 for the amorphous silicon layer that thickness is 1～2 μm, the semiconductor layer 124 of optical diode 122 for thickness
～0.5 amorphous silicon layer of μm.Therefore, the semiconductor layer 116 of optical diode 114 has bigger light absorption range, including absorbing indigo plant
Light and green glow, the semiconductor layer 124 of optical diode 122 only can absorb blue light.Colored filter 160 be arranged at fluorescence coating 108 with
Between optical diode 114, it may filter that blue light.Therefore, optical diode 114 only can detect and be excited by low energy X-ray 104a
Green fluorescence 110, and optical diode 122 only can detect the blue-fluorescence 112 obtaining being excited by high-energy X-ray 104b.Due to light
Diode 114 and the structure of optical diode 122 and material are substantially the same, and for flatly to arrange, therefore optical diode 114 and
122 may be formed on same substrate and complete in the lump with same technique.Colored filter 160 is arranged at light in technique subsequently again
On diode 114.
In sum, the invention provides multiple X-ray image according to the embodiment of the present invention and sense device, it only needs once
X-ray irradiation can arrive high-energy X-ray simultaneously and low energy X-ray irradiates the image obtained, and effectively solves known X-ray image and senses device
The problem of dynamic fuzzy.
Although the present invention discloses as above with several preferred embodiments, so it is not limited to the present invention, any affiliated
Those of ordinary skill in technical field, without departing from the spirit and scope of the present invention, when changing arbitrarily and retouching, because of
This protection scope of the present invention ought be defined depending on claim and is as the criterion.
Claims (8)
1. an X-ray image sensing element, including:
First fluorescence coating and the second fluorescence coating, its incident illumination that is overlapped and that each provide X-ray light source has different energy
Amount absorption region, to release the first fluorescence and the second fluorescence respectively, wherein this first fluorescence and the second fluorescence have different wave length；
First optical diode, can sense this first fluorescence；And
Second optical diode, overlapping with this first optical diode and this second fluorescence can be sensed,
Wherein this first optical diode is arranged between this second optical diode and this first fluorescence coating, and this second fluorescence coating is arranged
Between this first optical diode and this first fluorescence coating, and the thickness of this first fluorescence coating is less than the thickness of this second fluorescence coating
Degree；
Wherein the meansigma methods of the wave-length coverage of this first fluorescence is more than the meansigma methods of the wave-length coverage of this second fluorescence；
Wherein this first optical diode is rectilinear optical diode and includes amorphous silicon layer, and this second optical diode is horizontal light
Diode also includes polysilicon layer.
2. X-ray image sensing element as claimed in claim 1, wherein this second optical diode is electrically connected to active circuit
Or be a part of element of this active circuit.
3. X-ray image sensing element as claimed in claim 2, wherein this active circuit includes that signal amplifier, thin film are brilliant
Body pipe, data wire, gate line or aforesaid combination.
4. X-ray image sensing element as claimed in claim 1, wherein this first optical diode is electrically connected to the first film crystalline substance
Body pipe, this second optical diode is electrically connected to the second thin film transistor (TFT).
5. X-ray image sensing element as claimed in claim 4, wherein this first film transistor and the second thin film transistor (TFT) electricity
Property is connected to same grid circuit.
6. X-ray image sensing element as claimed in claim 1, wherein this first fluorescence coating include CsI:Tl, CsI:Na,
CdWO4、YTaO4:Nb、Gd2O2S:Tb、Gd2O2S:Pr,Ce,F、CaWO4、CaHfO3:Ce、SrHfO3:Ce、BaHfO3:Ce、NaI:
Tl、LaCl3:Ce、LaBr3:Ce、Bi4Ge3O12、Lu2SiO5:Ce、Gd2SiO5:Ce、YAlO3:Ce、LuAlO3:Ce、Lu2Si2O7:
Ce or the combination of previous materials.
7. X-ray image sensing element as claimed in claim 1, wherein this second fluorescence coating includes Gd3Ga5O12:Cr,Ce、
Y1.34Gd0.6Eu0.06O3、Y1.34Gd0.6Pr0.06O3、Lu2O3: Eu, Tb or the combination of previous materials.
8. an X-ray image sensing module, including:
Substrate；
Multiple X-ray image sensing elements as claimed in claim 1, are arranged on this substrate；
Gate driver circuit, is electrically connected with the plurality of X-ray image sensing element；And
Data drive circuit, is electrically connected with the plurality of X-ray image sensing element, and wherein this gate driver circuit and this data are driven
The switch of galvanic electricity each X-ray image sensing element of Lu Nengyi sequencing contro.
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| CN105974460B (en) * | 2016-05-11 | 2018-12-07 | 天津大学 | Restructural type X-ray energy spectrum detection method and detector pixel cellular construction |
| CN114267689A (en) * | 2017-10-26 | 2022-04-01 | 上海耕岩智能科技有限公司 | Light detection device and light detection device |
| CN112117290B (en) * | 2020-09-24 | 2023-11-24 | 京东方科技集团股份有限公司 | Radiation detector substrate and radiation detector |
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| US7388208B2 (en) * | 2006-01-11 | 2008-06-17 | Ruvin Deych | Dual energy x-ray detector |
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| CN201662621U (en) * | 2009-09-28 | 2010-12-01 | 卡尔斯特里姆保健公司 | X-ray radiography imaging device |
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| GB2443204A (en) * | 2006-10-04 | 2008-04-30 | Sharp Kk | Photosensor and ambient light sensor |
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|---|---|---|---|---|
| CN1270318A (en) * | 1998-12-28 | 2000-10-18 | 东芝株式会社 | Radiation detector |
| US7412024B1 (en) * | 2004-04-09 | 2008-08-12 | Xradia, Inc. | X-ray mammography |
| CN101069089A (en) * | 2004-10-14 | 2007-11-07 | 埃克林医疗***公司 | Polychromic digital radiography detector with patterned mask for single-exposure energy-sensitive X-ray imaging |
| US7388208B2 (en) * | 2006-01-11 | 2008-06-17 | Ruvin Deych | Dual energy x-ray detector |
| CN201662621U (en) * | 2009-09-28 | 2010-12-01 | 卡尔斯特里姆保健公司 | X-ray radiography imaging device |
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