CN102903721A - X-ray image sensing element and sensing module - Google Patents
X-ray image sensing element and sensing module Download PDFInfo
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- CN102903721A CN102903721A CN2011102085462A CN201110208546A CN102903721A CN 102903721 A CN102903721 A CN 102903721A CN 2011102085462 A CN2011102085462 A CN 2011102085462A CN 201110208546 A CN201110208546 A CN 201110208546A CN 102903721 A CN102903721 A CN 102903721A
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Abstract
The invention provides an X-ray image sensing element and sensing module. The sensing element comprises a first fluorescent layer, a second fluorescent layer, a first optical diode and a second optical diode, wherein the first fluorescent layer and second fluorescent layer overlap each other and have essentially different energy absorption ranges for incident light provided by the respective X-ray light sources so as to emit first fluorescence and second fluorescence with different wavelengths; the first optical diode is arranged on the side opposite the light source side of the first and second fluorescent layers; the second optical diode is arranged on the side opposite the light source side of the first and second fluorescent layers; and the first optical diode and the second optical diode can respectively sense the first fluorescence and the second fluorescence.
Description
Technical field
The present invention relates to a kind of X-ray image sensing element, and particularly relate to a kind of X-ray image sensing element that is applicable to dual energy radiograph technology.
Background technology
Chest radiographs is the technology of extensive use in the modern medicine, particularly the radiological image of chest can provide about thoracic bone and a large amount of and important diagnostic message of soft tissue, such as the disease that can be used for surveying about the bone such as the intervertenral space of lung, thoracic bone structure, upper abdomen organ (upper abdominal organs), lung blood vessel structure, middle thoracic vertebrae or soft tissue.
In existing chest Chest radiographs, often can use dual energy radiograph (dual energy X-ray imaging) technology.The principle of dual energy radiograph is continuous in twice X-ray of human exposure, and this X-ray of twice is respectively high-energy X-ray and low energy X-ray.Because high-energy X-ray and low energy X-ray have in various degree image contrast separately for skeletal structure and soft tissue, do image processing by computer for these two kinds of resulting images of different-energy and can obtain more clearly image, for example image can only present skeletal structure or only present soft tissue.
Existing X-ray image sensing element is generally the X-ray image sensing element of indirect type, and it only comprises one in order to fluorescence coating and an optical diode (photodiode) of sensing X-ray.X-ray is absorbed and discharging fluorescence by fluorescence coating after penetrating human body, and the fluorescence of emitting is absorbed by optical diode and converts electronic signal to.
Yet, measured the image that obtains by above-mentioned known X-ray image sensing element with dual energy radiograph technology and still had insoluble problem.During twice irradiation, such as X-ray light source or to some extent displacement of human body, will cause unusual in the image processing, be called dynamic fuzzy (motion blur).Moreover even if X-ray light source and human body were completely fixed between twice light period, beating of heart still can cause dynamic fuzzy.
What therefore, need development badly is a kind of applicable to dual energy radiograph technology and can solve the X-ray image sensing element of above-mentioned dynamic fuzzy problem.
Summary of the invention
The invention process provides a kind of X-ray image sensing element, comprise: the first fluorescence coating and the second fluorescence coating, its incident light overlapped and that respectively the X-ray light source is provided has the energy absorption scope that is different in essence, to emit separately the first fluorescence and the second fluorescence, wherein this first fluorescence and the second fluorescence have different wave length; The first optical diode, be arranged at this first and this second fluorescence coating with respect to the opposite side of this light source side; And second optical diode, be arranged at this first and this second fluorescence coating with respect to the opposite side of this light source side, wherein be designed to can this first fluorescence of each self-inductance measurement and this second fluorescence for this first optical diode and this second optical diode.
The embodiment of the invention also provides a kind of X-ray image sensing module, comprising: substrate; A plurality of as the aforementioned X-ray image sensing elements are arranged on this substrate; Gate driver circuit is electrically connected with these X-ray image sensing elements; And data drive circuit, be electrically connected with these X-ray image sensing elements, wherein this gate driver circuit and this data drive circuit can be according to the switches of each X-ray image sensing element of sequencing control.
For above and other purpose of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and cooperate accompanying drawing, be described in detail below:
Description of drawings
Fig. 1 is the schematic diagram according to the X-ray sensing element of the embodiment of the invention.
Fig. 2 is the vertical view according to the X-ray sensing element array of the embodiment of the invention.
Fig. 3～6 are the schematic diagram according to the X-ray sensing element of other various embodiment of the present invention.
Description of reference numerals
102～X-ray light source 104a～low energy X-ray
104b～high-energy X-ray 106～fluorescence coating
108～fluorescence coating, 110～fluorescence
112～fluorescence, 114～optical diode
116～semiconductor layer, 118～electrode
120～electrode, 122～optical diode
124～semiconductor layer, 126～electrode
128～electrode, 130～thin-film transistor
132～thin-film transistor, 134～data wire
136～data wire 140～active formula circuit
150～colored filter, 152～colored filter
160～colored filter
202～X-ray sensing element array
The data drive circuit of 204～high-energy X-ray
The data drive circuit of 206～low energy X-ray
208～grid circuit
Embodiment
Next the present invention will provide many different embodiment to implement different feature among the present invention.Composition in each specific embodiment and configuration will describe to simplify the present invention following.These embodiment are not for limiting the present invention.In addition, the component symbol that may duplicate in the various examples of this specification is so that simplified characterization, but this does not represent what has specific related between each embodiment and/or diagram.In addition, the first element be formed at the second element " top ", " on ", " under " or " on " can comprise that this first element among the embodiment directly contacts with the second element, or also can comprise also having other additional element to make this first element and the second element without directly contacting between this first element and the second element.
The embodiment of the invention provides a kind of X-ray image sensing element, it is applicable to dual energy radiograph technology, and only need shine X-ray one time, can obtain simultaneously the image that obtained by high-energy X-ray and low energy X-ray sensing thereby the X-ray image that can avoid obtaining having the dynamic fuzzy problem.
Referring to Fig. 1, it shows according to the X-ray image sensing element of the embodiment of the invention and the schematic diagram of related elements thereof.This X-ray image sensing element is the X-ray image sensing element that can be indirect type, it comprises two fluorescence coatings 106,108 and two optical diode detecting elements 114,122 at least, fluorescence coating 106,108 absorbs low energy X-ray 104a after penetrating object and high-energy X-ray 104b and excites discharging fluorescence, the fluorescence 110 of emitting, 112 absorbs and converts to electronic signal by optical diode 114,112, via thin-film transistor 130,132 and data wire 134,136 be passed to and do image processing in the computer, to obtain desired X-ray image.
Fluorescence coating 106,108 can be with respect to X-ray light source 102 and overlaps, to have maximum extinction area.For example, as shown in Figure 1, fluorescence coating 106 can overlap in (namely being arranged between fluorescence coating 108 and the X-ray light source 102) on the fluorescence coating 108.In an embodiment, fluorescence coating 106 can absorb the X-ray of at least a portion energy range of low energy X-ray 104a, the X-ray of energy-absorbing scope between about 40～90kVp for example, and but the emit wavelength scope (is narrated for convenient between fluorescence or the phosphorescence 110 of about 350～580nm, below all referred to as fluorescence 110), green glow for example.Fluorescence coating 106 can comprise for example CsI:Tl, CsI:Na, CdWO
4, YTaO
4: Nb, Gd
2O
2S:Tb, Gd
2O
2S:Pr, Ce, F, CaWO
4, CaHfO
3: Ce, SrHfO
3: Ce, BaHfO
3: Ce, NaI:Tl, LaCl
3: Ce, LaBr
3: Ce, Bi
4Ge
3O
12, Lu
2SiO
5: Ce, Gd
2SiO
5: Ce, YAlO
3: Ce, LuAlO
3: Ce, Lu
2Si
2O
7: fluorescence or the phosphor materials such as Ce.Fluorescence coating 108 can absorb at least a portion energy range of high-energy X-ray 104b, for example the energy-absorbing scope is between the X-ray of about 100～160kVp, and but the emit wavelength scope (is narrated for convenient between fluorescence or the phosphorescence 112 of about 600～800nm, below all referred to as fluorescence 112), for example infrared light or near infrared light.Fluorescence coating 108 can comprise for example Gd
3Ga
5O
12: Cr, Ce, Y
1.34Gd
0.6Eu
0.06O
3, Y
1.34Gd
0.6Pr
0.06O
3, Lu
2O
3: Eu, fluorescence or the phosphor materials such as Tb.Mainly absorb low energy X-ray 104a by the thickness of adjusting fluorescence coating 106 by fluorescence coating 106, although fluorescence coating 106 overlaps on fluorescence coating 108, high-energy X-ray 104b is penetrable fluorescence coating 106 and being absorbed hardly still, is entered fluorescence coating 108 fluorescence excitation layers 108 and gives out light.The thickness of fluorescence coating 106 is about 50～150 μ m, and the thickness of fluorescence coating 108 is about 150～450 μ m.
Fig. 2 is shown as by the vertical view that contains the formed X-ray sensing module of a plurality of X-ray image arrays that sensing element forms shown in Figure 1.A plurality of X-ray image sensing elements 202 are formed on the substrate, and each X-ray sensing element comprises at least two fluorescence coating and two optical diode detecting elements that the energy absorption scope is different.The data drive circuit 204 of high-energy X-ray, the data drive circuit 206 of low energy X-ray and grid circuit 208 are arranged at around the X-ray sensing element array, according to the switch of each X-ray image sensing element 202 of sequencing control, the X-ray image that is sensed to obtain the X-ray image sensing element array.In an embodiment, the data drive circuit 206 of the drive circuit 204 of high-energy X-ray and low energy X-ray can divide and is arranged.In another embodiment, the data drive circuit 206 of the drive circuit 204 of high-energy X-ray and low energy X-ray can be able to be merged and be set to drive circuit.
Fig. 3 shows according to the X-ray image sensing element of another embodiment of the present invention and the schematic diagram of related elements thereof.In this embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The Main Differences of present embodiment and embodiment shown in Figure 1 is that optical diode 122 is rectilinear optical diode.Optical diode 122 shown in this enforcement can be formed by same material with optical diode shown in Figure 1 haply.For example, optical diode 122 comprise electrode 126,128 and semiconductor layer 124 be located between the electrode 126,128.Electrode 126 can comprise tin ash, zinc oxide, tin indium oxide (ITO), indium zinc oxide (IZO), antimony tin (ATO), mixes the tin ash (FTO) of fluorine, mix the zinc oxide (AZO) of aluminium, aforesaid combination or other suitable transparent conductive materials.Semiconductor layer 124 can comprise polysilicon layer, and its thickness can be about 0.05～1 μ m, and its extinction scope comprises the wave-length coverage of fluorescence 112 haply.In the present embodiment, optical diode 122 can be set to as the rectilinear optical diode as the optical diode 114, and the electrode 126 of optical diode, 128 is for vertically being arranged at top and the below of semiconductor layer 124.Electrode 126 can for example be the p-type electrode, and electrode 128 can for example be the N-shaped electrode.Apprehensiblely be that electrode 126 and 128 position or polarity are also interchangeable.
Fig. 4 shows according to the X-ray image sensing element of further embodiment of this invention and the schematic diagram of related elements thereof.In this embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The Main Differences of present embodiment and embodiment shown in Figure 1 is that optical diode 124 directly is electrically connected to active formula circuit 140.
Because the ordered state of molecular structure in tube core of polysilicon is neat and directive, so the electronics rate travel is faster about 200～300 times than arranging mixed and disorderly amorphous silicon.Therefore, horizontal polysilicon optical diode 122 can directly be electrically connected to active formula image element circuit 140 or become in the active formula image element circuit part of 140.Active formula image element circuit can for example be signal amplifier, thin-film transistor, data wire, gate line or aforesaid combination.The signal that horizontal polysilicon optical diode 122 produces is passed to data wire 136 after processing via active formula circuit 140 again.
Fig. 5 shows according to the X-ray image sensing element of alternate embodiment of the present invention and the schematic diagram of related elements thereof.In this embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The Main Differences of present embodiment and embodiment shown in Figure 1 is optical diode 114 and optical diode 122 with respect to fluorescence coating 106,108 for horizontally.In an embodiment, optical diode 114,122 semiconductor layer 116,124 can be formed and had identical thickness by same material, for example can comprise amorphous silicon layer, and thickness can be between about 0.5～2 μ m.Under this thickness, semiconductor layer 116 and 124 can have identical extinction scope, but for example absorbing wavelength between the fluorescence of 300～600nm.In another embodiment, optical diode 114,122 semiconductor layer 116,124 also can have different thickness, but have overlapping extinction scope.Colored filter 150 can be arranged between optical diode 114 and the fluorescence coating 108, to filter the fluorescence 112 that is excited by high-energy X-ray 104b.Colored filter 152 can be arranged between optical diode 122 and the fluorescence coating 108, to filter the fluorescence 110 that is excited by low energy X-ray 104a.Therefore, optical diode 114 only can detect the fluorescence 110 that is excited by low energy X-ray 104a, and optical diode 122 only can detect the fluorescence 112 that is excited by high-energy X-ray 104b.Only need shine X source one time, can obtain simultaneously to shine the image that obtains from low energy X-ray 104a and high-energy X-ray 104b.
For example, in specific embodiment, low energy X-ray 104a fluorescence excitation layer 106 is emitted blue-fluorescence (for example about 420nm of wavelength) 110, and high-energy X-ray 104b fluorescence excitation layer 108 is emitted green fluorescence (for example about 550nm of wavelength) 112.The semiconductor layer 116 of optical diode 114 and the semiconductor layer 124 of optical diode 122 have wider extinction scope for thickness is the amorphous silicon layer of 0.5～2 μ m, for example can absorb simultaneously blue light and green glow.Colored filter 150 can filter all wavelengths except blue light, 152 all wavelengths that can filter except green glow of colored filter.Therefore, optical diode 114 only can detect the blue-fluorescence 110 that is excited by low energy X-ray 104a, and optical diode 122 only can detect and obtains the green fluorescence 112 that excited by high-energy X-ray 104b.
In addition, because structure and the material of optical diode 114 and optical diode 122 are identical haply, and be flatly arrangement, so optical diode 114 and 122 can be formed on the same substrate and with same technique and finishes in the lump.Colored filter 150,152 can be in being arranged on optical diode 114 and 122 subsequently again.
Fig. 6 shows according to the X-ray image sensing element of another alternate embodiment of the present invention and the schematic diagram of related elements thereof.In this embodiment, unless stated otherwise, identical label represents element identical or similar to the foregoing embodiment.The Main Differences of present embodiment and embodiment shown in Figure 1 be the semiconductor layer 124 of the semiconductor layer 116 of optical diode 114 and optical diode 122 for to be formed by same material, but have different-thickness.For example, optical diode 114,122 semiconductor layer 116,124 all can comprise amorphous silicon layer.In an embodiment, the thickness of the semiconductor layer 116 of optical diode 114 can be 1～2 μ m, the thickness of the semiconductor layer 124 of optical diode 122 can be 0.1～0.5 μ m, the thickness of semiconductor layer 124 can be than the thin thickness of semiconductor layer 116, and the absorption region of semiconductor layer 124 can comprise the absorption region of the semiconductor layer 116 of at least a portion.Colored filter 160 can be arranged between optical diode 114 and the second fluorescence coating 108, and it can filter the fluorescence 112 that is excited by high-energy X-ray 104b.Therefore, optical diode 114 only can detect the fluorescence 110 that is excited by low energy X-ray 104a, and optical diode 122 only can detect the fluorescence 112 that is excited by high-energy X-ray 104b.Only need shine X source one time, can obtain simultaneously to shine the image that obtains from low energy X-ray 104a and high-energy X-ray 104b.
For example, in specific embodiment, low energy X-ray 104a fluorescence excitation layer 106 is emitted green fluorescence (for example about 550nm of wavelength) 110, and high-energy X-ray 104b is excited to fluorescence coating 108 and emits blue-fluorescence (for example about 420nm of wavelength) 112.The semiconductor layer 116 of optical diode 114 is the amorphous silicon layer of 1～2 μ m for thickness, and the semiconductor layer 124 of optical diode 122 is the amorphous silicon layer of 0.1～0.5 μ m for thickness.Therefore, the semiconductor layer 116 of optical diode 114 has larger extinction scope, comprises absorbing blue light and green glow, and the semiconductor layer 124 of optical diode 122 only can absorb blue light.Colored filter 160 is arranged between fluorescence coating 108 and the optical diode 114, and it can filter blue light.Therefore, optical diode 114 only can detect the green fluorescence 110 that is excited by low energy X-ray 104a, and optical diode 122 only can detect and obtains the blue-fluorescence 112 that excited by high-energy X-ray 104b.Because structure and the material of optical diode 114 and optical diode 122 are identical haply, and be flatly arrangement, so optical diode 114 and 122 can be formed on the same substrate and with same technique and finishes in the lump.Colored filter 160 is in being arranged on the optical diode 114 in the technique subsequently again.
In sum, the invention provides a plurality of X-ray image sensing apparatus according to the embodiment of the invention, it only needs an X-ray irradiation to shine the image that obtains to high-energy X-ray and low energy X-ray simultaneously, effectively solves the problem of known X-ray image sensing apparatus dynamic fuzzy.
Although the present invention discloses as above with several preferred embodiments; so it is not to limit the present invention; those of ordinary skill in the technical field under any; without departing from the spirit and scope of the present invention; when can changing arbitrarily and retouching, so protection scope of the present invention defines and is as the criterion when looking claim.
Claims (20)
1. X-ray image sensing element comprises:
The first fluorescence coating and the second fluorescence coating, its incident light overlapped and that separately the X-ray light source is provided has different energy absorption scopes, and to emit respectively the first fluorescence and the second fluorescence, wherein this first fluorescence and the second fluorescence have different wave length;
The first optical diode, be arranged at this first and this second fluorescence coating with respect to the opposite side of this light source side; And
The second optical diode, be arranged at this first and this second fluorescence coating with respect to the opposite side of this light source side, wherein this first optical diode and this second optical diode can this first fluorescence of sensing and this second fluorescence.
2. X-ray image sensing element as claimed in claim 1, wherein this first and this second optical diode with respect to this first and this second fluorescence coating be overlapping arrangement.
3. X-ray image sensing element as claimed in claim 2, wherein this first optical diode comprises amorphous silicon layer, this second optical diode comprises polysilicon layer.
4. X-ray image sensing element as claimed in claim 1, wherein this first and this second optical diode with respect to this first and this second fluorescence coating be horizontal.
5. X-ray image sensing element as claimed in claim 4, wherein this first optical diode and this second optical diode comprise the first amorphous silicon layer and the second amorphous silicon layer separately.
6. X-ray image sensing element as claimed in claim 4, comprise that also the first colored filter is arranged between this second fluorescence coating and this first optical diode, and the second colored filter is arranged between this second fluorescence coating and this second optical diode, and wherein this first colored filter can filter this second fluorescence, and this second colored filter can filter this first fluorescence.
7. X-ray image sensing element as claimed in claim 6, wherein this first amorphous silicon layer and the second amorphous silicon layer have same thickness.
8. X-ray image sensing element as claimed in claim 4 comprises that also colored filter is arranged between this second fluorescence coating and this second optical diode, and wherein this colored filter can filter this first fluorescence.
9. X-ray image sensing element as claimed in claim 8 does not wherein comprise colored filter between this first optical diode and this second fluorescence coating.
10. X-ray image sensing element as claimed in claim 8, wherein this first amorphous silicon layer and the second amorphous silicon layer have different-thickness, and wherein the thickness of this second amorphous silicon layer this first amorphous silicon layer is thin.
11. X-ray image sensing element as claimed in claim 10, wherein the thickness of this second amorphous silicon layer is 0.1～0.5 μ m.
12. X-ray image sensing element as claimed in claim 1, wherein this first optical diode is rectilinear optical diode, and this second optical diode is the horizontal optical diode.
13. X-ray image sensing element as claimed in claim 12, wherein this second optical diode is electrically connected to active formula circuit or is a part of element of this active formula circuit.
14. X-ray image sensing element as claimed in claim 13, wherein this active formula circuit comprises signal amplifier, thin-film transistor, data wire, gate line or aforesaid combination.
15. X-ray image sensing element as claimed in claim 1, this first optical diode and this second optical diode are all rectilinear optical diode.
16. X-ray image sensing element as claimed in claim 1, wherein this first optical diode is electrically connected to the first film transistor, and this second optical diode is electrically connected to the second thin-film transistor.
17. X-ray image sensing element as claimed in claim 16, wherein this first film transistor and the second thin-film transistor are electrically connected to same grid circuit.
18. X-ray image sensing element as claimed in claim 1, wherein this first fluorescence coating comprises CsI:Tl, CsI:Na, CdWO
4, YTaO
4: Nb, Gd
2O
2S:Tb, Gd
2O
2S:Pr, Ce, F, CaWO
4, CaHfO
3: Ce, SrHfO
3: Ce, BaHfO
3: Ce, NaI:Tl, LaCl
3: Ce, LaBr
3: Ce, Bi
4Ge
3O
12, Lu
2SiO
5: Ce, Gd
2SiO
5: Ce, YAlO
3: Ce, LuAlO
3: Ce, Lu
2Si
2O
7: the combination of Ce or previous materials.
19. X-ray image sensing element as claimed in claim 1, wherein this second fluorescence coating comprises Gd
3Ga
5O
12: Cr, Ce, Y
1.34Gd
0.6Eu
0.06O
3, Y
1.34Gd
0.6Pr
0.06O
3, Lu
2O
3: Eu, the combination of Tb or previous materials.
20. an X-ray image sensing module comprises:
Substrate;
A plurality of X-ray image sensing elements as claimed in claim 1 are arranged on this substrate;
Gate driver circuit is electrically connected with these a plurality of X-ray image sensing elements; And
Data drive circuit is electrically connected with these a plurality of X-ray image sensing elements, and wherein this gate driver circuit and this data drive circuit can be according to the switches of each X-ray image sensing element of sequencing control.
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| CN102903721B (en) | 2016-08-24 |
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