CN102901619A - Test device and test method for light beam characteristics of three-dimensional laser device - Google Patents
Test device and test method for light beam characteristics of three-dimensional laser device Download PDFInfo
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- CN102901619A CN102901619A CN2012103810730A CN201210381073A CN102901619A CN 102901619 A CN102901619 A CN 102901619A CN 2012103810730 A CN2012103810730 A CN 2012103810730A CN 201210381073 A CN201210381073 A CN 201210381073A CN 102901619 A CN102901619 A CN 102901619A
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Abstract
The invention provides a test device and test method for light beam characteristics of a three-dimensional laser device. The test device comprises a semispherical light beam receiving device, wherein an output end of a semiconductor laser device is arranged in the spherical center of the semispherical light beam receiving device; multiple micro light receivers are distributed on the semispherical light beam receiving device facing to the semiconductor laser device; and each micro light receiver is connected with a micro detector respectively. According to the test device and test method, absolute distances between light emitting points of the semiconductor laser device and the detectors can be kept constant in a process of detecting power of the laser device, and light intensity information of points with the light beam characteristics of the light emitting points of the semiconductor laser device is equidistantly measured.
Description
Technical field
The invention belongs to the laser instrument field tests, relate to the three-dimensional light beam characteristic test device of a kind of semiconductor laser and method of testing.
Background technology
Semiconductor laser has obtained more and more for using widely in fields such as industrial processes, laser medicine, laser display, laser ranging, laser radar, laser guidances owing to have the advantages such as little, lightweight, the direct employing electricity of volume drives, electro-optical efficiency is high, the life-span is long.But semiconductor laser is because its special active area waveguiding structure, the fast axle angle of divergence is larger, and the fast and slow axis light beam is asymmetric, causes the mass ratio of its output beam relatively poor, so the beam quality of semiconductor laser becomes one of critical bottleneck of its application of restriction.The beam quality of Improvement semiconductor laser, the information such as necessary its fast and slow axis angle of divergence of Obtaining Accurate, waist radius, so the measurement of noise spectra of semiconductor lasers beam characteristics is just more and more paid close attention to by people.For many years, people have proposed the method for the multiple measuring semiconductor angle of divergence.Wherein method of testing commonly used has:
(1) direct method of measurement
The direct method of measurement mainly comprises two kinds
A) vertical spacing mensuration (semiconductor laser measuring device parameter [200510115043] patent).Namely keeping laser instrument luminous point and laser acquisition vertical range is a fixed value, mode with tangential movement, laser detector is moved to laser instrument light emitting region zone with the vertical plane perpendicular to the luminous axis of laser instrument, measure the laser optical power at diverse location place, reach the purpose of beam characteristics test.It is more single that but this method test is pointed to, and each test point reference position is relatively different from the absolute position of semiconductor laser luminous point, causes the each point test error larger.
B) CCD mensuration (laser beam divergent angle test method [01108756.0] patent).Apart from semiconductor laser luminous point a distance ccd video camera is set, ccd video camera camera lens receiving center keeps concentric with the semiconductor laser luminous point, after semiconductor laser was luminous, the mode by the figure collection obtained the luminous zone of semiconductor laser.This method can be measured the light-emitting zone of semiconductor laser intuitively, but is subject to the restriction of the size of CCD own and cost, is only applicable to measure the semiconductor laser beam characterisitic parameter of smaller power.
(2) indirect method of measurement (the direct measuring system of SCM Based laser beam characteristic hot spot, " photoelectric technology application " 2004-10).Namely detected laser is united when trigger pip is sent GPS simultaneously, with the recording laser impulse ejection constantly at certain distance irradiation diffuse reflection target plate.Photodetector received pulse laser signal sends trigger pip through frequency measurement, the backward image capture apparatus of delaying time (ccd video camera or thermal imaging system), makes its recording laser light spot image.Record and each two field picture is processed the beam characteristics hot spot parameter that obtains each pulse by special software after complete.This method is applicable to measure relatively high power semiconductor laser product, but detector response time is longer, reaches 10
5Magnitude, it is low that extreme pulse laser is surveyed (such as 10ns) efficient, and real-time is relatively poor, and measuring accuracy is not high yet.
All there are certain limitation in present existing beam characteristics measuring method and device in application process, for example measuring accuracy is poor, test consuming time long, be only applicable to low-power semiconductor laser.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art, a kind of simple and practical 3 D semiconductor laser beam characteristic test device and method of testing are proposed, adopt this proving installation can access whole semiconductor laser beam characteristic real-time curve, and describe intuitively the beam characteristics of semiconductor laser, thereby realize the measurement of the spatial beam characterisitic parameter of noise spectra of semiconductor lasers.
The objective of the invention is to be achieved through the following technical solutions:
A kind of three-dimensional laser device beam characteristics proving installation, its special character is: comprise semisphere light beam receiving trap; The output terminal of semiconductor laser is positioned at the centre of sphere of this semisphere light beam receiving trap, and semisphere light beam receiving trap is distributed with a plurality of Miniature optical receivers towards semiconductor laser, and each Miniature optical receiver is connected to respectively micro detector.
Based on above-mentioned basic technical scheme, the present invention has also done following optimization and has limited and improve:
Above-mentioned a plurality of Miniature optical receiver evenly distributes, and the distance between the output terminal of each Miniature optical receiver and semiconductor laser equates.
Above-mentioned Miniature optical receiver can be the devices such as optical fiber, optical waveguide; Above-mentioned micro detector can adopt the electrooptical devices such as photodiode, photomultiplier.
The measuring accuracy of above-mentioned three-dimensional laser device beam characteristics proving installation is relevant with the number of Miniature optical receiver and micro detector.The quantity of Miniature optical receiver and micro detector is larger, and test result is more accurate.
The present invention adopts above-mentioned proving installation to realize that the method for three-dimensional laser device beam characteristics test is as follows:
1) position of semiconductor laser keeps fixing, measures, records the light intensity of each Miniature optical receiver on the semisphere light beam receiving trap, obtains light intensity data corresponding to all Miniature optical receivers;
2) data are carried out analyzing and processing, obtain to characterize the information (spatial light intensity distribution, the fast axle angle of divergence, the slow axis angle of divergence etc.) of semiconductor laser beam characteristic.
The present invention has following beneficial effect:
1) method of testing of the present invention can accurately be measured semiconductor laser at three-dimensional parameter of beam characteristics;
2) the method has higher precision and reliability owing to adopted the mode of direct measurement;
3) the present invention can keep the absolute distance between semiconductor laser luminous point and the detector constant, the intensity signal at equidistant measurement semiconductor laser luminous point beam characteristics each point place in the process that laser power is surveyed.
4) device that the present invention relates to all has characteristics simple in structure, convenient to use.
Description of drawings
Fig. 1 is semiconductor laser semisphere beam characteristics proving installation synoptic diagram of the present invention;
Fig. 2 is the synoptic diagram of testing scheme of the present invention;
Fig. 3 utilizes single-tube semiconductor laser that the present invention surveys in the axial beam distribution of speed, and wherein a is that the fast axial light bundle distributes, b is that slow axis beam distributes.
Wherein: 1 is Miniature optical receiver (module), and 2 is optical fiber, the detector in the 3 semisphere light beam receiving traps, and 4 is semisphere light beam receiving trap, 5 is semiconductor laser.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail.
Three-dimensional laser device beam characteristics proving installation of the present invention comprises semisphere light beam receiving trap; The output terminal of semiconductor laser is positioned at the centre of sphere of this semisphere light beam receiving trap, semisphere light beam receiving trap is distributed with a plurality of Miniature optical receivers towards semiconductor laser, a plurality of Miniature optical receivers evenly distribute, distance between the output terminal of each Miniature optical receiver and semiconductor laser equates that each Miniature optical receiver is connected to respectively photo-detector.
Testing scheme of the present invention, as shown in Figure 2:
1) semiconductor laser 5 is placed near semisphere light beam receiving trap 4 centre ofs sphere;
2) measure the light intensity of each Miniature optical receiver on the record semisphere light beam receiving trap 4.
3) data are carried out analyzing and processing, obtain the information such as the semiconductor laser spatial light intensity distributes, the fast axle angle of divergence, the slow axis angle of divergence.
Adopt testing scheme of the present invention under 1.8A, to measure single-tube semiconductor laser in the axial beam distribution of speed, as shown in Figure 3.
Need to prove that it is preferred embodiment of the present invention that semiconductor laser is placed the semisphere light beam receiving trap centre of sphere, as long as can cover the angle of divergence of semiconductor laser outgoing beam, all is feasible; Usually namely be positioned near the centre of sphere owing to satisfy the position of this condition, therefore, should regard being equal to of above-described embodiment as, belong to protection scope of the present invention.
The aforesaid scheme of the present invention is based on semisphere light beam receiving trap.But the present invention also can adopt 1/2n spherical beams receiving trap (n>2), in the actual measurement process, need to rotate 1/2n spherical beams receiving trap, repeat foregoing testing scheme n time, namely can obtain the result identical with semisphere light beam receiving trap.
In sum, three-dimensional laser device beam characteristics proving installation of the present invention and method of testing have not only well solved conventional beam characteristic test method shortcoming, and physics realization is comparatively simple, and parameter of beam characteristics is described comprehensively, possesses good application prospect.
Claims (4)
1. a three-dimensional laser device beam characteristics proving installation is characterized in that: comprise semisphere light beam receiving trap; The output terminal of semiconductor laser is positioned at the centre of sphere of this semisphere light beam receiving trap, and semisphere light beam receiving trap is distributed with a plurality of Miniature optical receivers towards semiconductor laser, and each Miniature optical receiver is connected to respectively micro detector.
2. proving installation according to claim 1, it is characterized in that: described a plurality of Miniature optical receivers evenly distribute, and the distance between the output terminal of each Miniature optical receiver and semiconductor laser equates.
3. proving installation according to claim 1, it is characterized in that: described Miniature optical receiver is optical fiber or optical waveguide; Micro detector adopts photodiode or photomultiplier.
4. adopt the as claimed in claim 1 method of proving installation realization three-dimensional laser device beam characteristics test, may further comprise the steps:
1) position of semiconductor laser keeps fixing, measures, records the light intensity of each Miniature optical receiver on the semisphere light beam receiving trap, obtains all Miniature optical receivers corresponding to the light intensity data of different rotary angle;
2) data are carried out analyzing and processing, obtain to characterize the information of laser beam characteristic.
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Cited By (3)
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CN105043723A (en) * | 2015-07-30 | 2015-11-11 | 中国科学院长春光学精密机械与物理研究所 | Large-area expansion radiation calibration light source cosine characteristic test device and test method |
CN105466669A (en) * | 2015-12-31 | 2016-04-06 | 深圳市亚派光电器件有限公司 | Detection device for detecting performance of laser diode |
CN105510004A (en) * | 2015-12-31 | 2016-04-20 | 深圳市亚派光电器件有限公司 | Method for detecting performance of laser diode |
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CN105043723A (en) * | 2015-07-30 | 2015-11-11 | 中国科学院长春光学精密机械与物理研究所 | Large-area expansion radiation calibration light source cosine characteristic test device and test method |
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CN105466669A (en) * | 2015-12-31 | 2016-04-06 | 深圳市亚派光电器件有限公司 | Detection device for detecting performance of laser diode |
CN105510004A (en) * | 2015-12-31 | 2016-04-20 | 深圳市亚派光电器件有限公司 | Method for detecting performance of laser diode |
CN105510004B (en) * | 2015-12-31 | 2018-03-06 | 深圳市亚派光电器件有限公司 | For detecting the detection method of laser diode performance |
CN105466669B (en) * | 2015-12-31 | 2018-04-03 | 深圳市亚派光电器件有限公司 | For detecting the detection device of laser diode performance |
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