CN102881784B - The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method - Google Patents
The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method Download PDFInfo
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Abstract
The invention provides the p-type GaN/AlGaN structure that a kind of C δ adulterates, comprise p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprise the p-type gallium nitride layer of tactic undoped, aluminum gallium nitride layer that aluminum gallium nitride layer, C doped layer and C doping that C doping increases gradually reduce gradually.The preparation method of the p-type GaN/AlGaN structure that the present invention also provides a kind of C δ to adulterate, the LED structure with the p-type GaN/AlGaN structure that this C δ adulterates and preparation method thereof.In p-type GaN/AlGaN structure, LED structure and preparation method thereof that C δ provided by the invention adulterates, the p-type GaN/AlGaN structure that described C δ adulterates can produce the Two-Dimensional Hole of high concentration and high hole mobility, thus has high conductivity.
Description
Technical field
The invention belongs to semiconductor applications, particularly relate to p-type GaN/AlGaN structure, LED structure and preparation method that a kind of C δ adulterates.
Background technology
Terminological interpretation:
C δ adulterates: C(carbon) doping of the Delta of element, namely in the mode of δ doping, C doping is entered.
Have the p-type gallium nitride (GaN) of high conductivity and aluminum gallium nitride (AlGaN) epitaxial material for various electronics and opto-electronic device all extremely important, but because Mg impurity forms deep energy level in GaN epitaxy material, greatly reduce the activation efficiency of impurity, add that the mobility in hole under heavy doping condition is also lower, cause the conductivity of p-type GaN material to can not get effective raising always; And in the AlGaN epitaxial material that energy gap is wider, the conductivity of p-type material is just lower.Therefore, in p-type GaN and AlGaN epitaxial material, conductivity is not high, causes the GaN of current p-type and AlGaN material to meet and more and more applies in the photoelectric device such as laser, solar blind ultraviolet detector.Thus, the demand for high conductivity p-type GaN and AlGaN is also more and more urgent.
Summary of the invention
The object of this invention is to provide the p-type GaN/AlGaN structure that a kind of C δ adulterates, the p-type GaN/AlGaN structure that described C δ adulterates can produce the Two-Dimensional Hole of high concentration and high hole mobility, thus has high conductivity; Present invention also offers the preparation method of the p-type GaN/AlGaN structure of this C δ doping, the LED structure with the p-type GaN/AlGaN structure that this C δ adulterates and preparation method thereof.
The object of the invention is to be achieved through the following technical solutions:
The p-type GaN/AlGaN structure that a kind of C δ adulterates, comprise p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprise the p-type gallium nitride layer of tactic undoped, aluminum gallium nitride layer that aluminum gallium nitride layer, C doped layer and C doping that C doping increases gradually reduce gradually.
The preparation method of the p-type GaN/AlGaN structure that the present invention also provides a kind of C δ to adulterate, said method comprising the steps of:
S11, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually.
The present invention also provides a kind of LED structure, comprise substrate layer, resilient coating, intrinsic gallium nitride layer, n-type gallium nitride layer, luminescent layer and p-type gallium nitride layer that order is stacked, wherein also comprise the p-type GaN/AlGaN structure sheaf being formed at the C δ between luminescent layer and p-type gallium nitride layer and adulterating, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, the aluminum gallium nitride layer that described p-type GaN/AlGaN unit comprises the p-type gallium nitride layer of tactic undoped, C doping increases gradually aluminum gallium nitride layer, C doped layer and C doping reduce gradually.
The present invention also provides a kind of preparation method of LED structure, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, n-type gallium nitride layer and luminescent layer;
S22, grow on luminescent layer C δ adulterate p-type GaN/AlGaN structure sheaf, specifically comprise the following steps:
S11, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually;
S23, C δ adulterate p-type GaN/AlGaN structure sheaf on grow p-type gallium nitride layer.
In p-type GaN/AlGaN structure, LED structure and preparation method thereof that C δ provided by the invention adulterates, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And both gallium nitride and aluminum gallium nitride between cause the skew of positive and negative charge under the large effect of stress that produces of Macrolattice mismatch, thus the piezoelectric polarization caused, these all can form two-dimensional hole gas at AlGaN/GaN place, thus increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thus reduce the contact resistance of device; Meanwhile, adopt C δ doping, by the electron cloud of its doped layer occur overlapping, greatly weaken ionized impurity scattering, mobility be significantly improved, thus there is high conductivity.
Accompanying drawing explanation
Fig. 1 is the p-type GaN/AlGaN structural representation of the C δ doping that the embodiment of the present invention provides.
Fig. 2 is the p-type GaN/AlGaN structure preparation method schematic flow sheet of the C δ doping that the embodiment of the present invention provides.
Fig. 3 is the LED structural representation that the embodiment of the present invention provides.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Please refer to shown in Fig. 1, the p-type GaN/AlGaN structure that a kind of C δ adulterates, comprise p-type GaN/AlGaN unit 10, described p-type GaN/AlGaN unit comprise the p-type gallium nitride layer 11 of tactic undoped, aluminum gallium nitride layer 14 that aluminum gallium nitride layer 12, C doped layer 13 and C doping that C doping increases gradually reduce gradually.
In the p-type GaN/AlGaN structure that C δ provided by the invention adulterates, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And both gallium nitride and aluminum gallium nitride between cause the skew of positive and negative charge under the large effect of stress that produces of Macrolattice mismatch, thus the piezoelectric polarization caused, these all can form two-dimensional hole gas at AlGaN/GaN place, thus increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thus reduce the contact resistance of device; Meanwhile, adopt C δ doping, by the electron cloud of its doped layer occur overlapping, greatly weaken ionized impurity scattering, mobility be significantly improved, thus there is high conductivity.
Further, the dopant in p-type GaN/AlGaN structure of the present invention is carbon (C), and it also has as a kind of p-type dopant the advantage that other p-type dopant cannot be reached: the diffusion coefficient that (1) is minimum; (2) lower ionization energy; (3) very high doping content (>10
20/ cm
3); (4) less impurity memory effect.
As a kind of specific embodiment, the p-type GaN/AlGaN structure that the C δ in Fig. 1 adulterates only has a p-type GaN/AlGaN unit 10.Certainly, the p-type GaN/AlGaN structure that C δ of the present invention adulterates is not limited thereto, those skilled in the art can also be as required, multiple p-type GaN/AlGaN unit 10 is set, each p-type GaN/AlGaN unit 10 stacked arrangement, the aluminum gallium nitride layer 14 that namely the C doping of first p-type GaN/AlGaN unit 10 reduces gradually is connected with the p-type gallium nitride layer 11 of the undoped of second p-type GaN/AlGaN unit 10; Preferably, the number of described p-type GaN/AlGaN unit is 2-7, can improve hole concentration better thus, and relative obtains better crystal structure.
Preferably, the thickness of described each p-type GaN/AlGaN unit 10 is 5-8 nanometer, form the p-type GaN/AlGaN unit 10 in this thickness range, the effect of Simplified flowsheet, conservation and good crystal structure can be played, and can more effective raising hole concentration.
Please refer to shown in Fig. 2, the preparation method of the p-type GaN/AlGaN structure that the present invention also provides a kind of C δ to adulterate, said method comprising the steps of:
S11, using trimethyl gallium (TMGa) as gallium source, ammonia (NH3) as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium (TMAl) as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually.
In the preparation method of the p-type GaN/AlGaN structure that C δ provided by the invention adulterates, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And both gallium nitride and aluminum gallium nitride between cause the skew of positive and negative charge under the large effect of stress that produces of Macrolattice mismatch, thus the piezoelectric polarization caused, these all can form two-dimensional hole gas at AlGaN/GaN place, thus increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thus reduce the contact resistance of device; Meanwhile, adopt C δ doping, by the electron cloud of its doped layer occur overlapping, greatly weaken ionized impurity scattering, mobility be significantly improved, thus there is high conductivity.
As specific embodiment, step S11, S12, S13 and S14 at least 1 time can be repeated, so move in circles, form multiple p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.Wherein, describedly repeat step S11, S12, S13 and S14 comprise at least 1 time: step S11, S12, S13 and S14 can repeat, and also can not repeat; If repeated, namely using step S11, S12, S13 and S14 as independent cycle, can at least 1 time be repeated, multiple p-type GaN/AlGaN unit 10 as shown in Figure 1 will be formed thus, each p-type GaN/AlGaN unit 10 stacked arrangement, the aluminum gallium nitride layer 14 that namely the C doping of first p-type GaN/AlGaN unit 10 reduces gradually is connected with the p-type gallium nitride layer 11 of the undoped of second p-type GaN/AlGaN unit 10; If do not repeated, in the p-type GaN/AlGaN structure that C δ adulterates, just only has a p-type GaN/AlGaN unit 10 as shown in Figure 1.Preferably, the number of times that described step S11, S12, S13 and S14 repeat is 1-6, and namely the number of described p-type GaN/AlGaN unit is total up to 2-7, can improve hole concentration better thus, and relative obtains better crystal structure.
As concrete execution mode, in the preparation process of described p-type GaN/AlGaN unit, pass into pure hydrogen (H
2) as carrier gas; Namely, in each step preparation process of step S11, S12, S13 and S14, can pass in pure hydrogen to reative cell as carrier gas.
As specific embodiment, in described step S12, the flow of trimethyl gallium is 35-55sccm, and the flow of ammonia is 28000-32000sccm, can grow high-quality crystal structure better thus.
Preferably, in described step S12, the duration forming the aluminum gallium nitride layer that C doping increases gradually is 10-15 second, can grow high-quality crystal structure better thus.
Preferably, in described step S13, the duration forming C doped layer is 3-5 second, can grow high-quality crystal structure better thus.
Preferably, in described step S14, the duration forming the aluminum gallium nitride layer that C doping reduces gradually is 10-15 second, can grow high-quality crystal structure better thus.
Preferably, the thickness of described each p-type GaN/AlGaN unit is 5-8 nanometer, forms the p-type GaN/AlGaN unit 10 in this thickness range, can play the effect of Simplified flowsheet, conservation and good crystal structure, and can more effective raising hole concentration.
Please refer to shown in Fig. 3, the present invention also provides a kind of LED structure, comprise the substrate layer 1 that order is stacked, resilient coating 2, intrinsic gallium nitride layer 3, n-type gallium nitride layer 4, luminescent layer 5 and p-type gallium nitride layer 6, wherein also comprise the p-type GaN/AlGaN structure sheaf being formed at the C δ between luminescent layer 5 and p-type gallium nitride layer 6 and adulterating, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprises the p-type gallium nitride layer 11 of tactic undoped, the aluminum gallium nitride layer 12 that C doping increases gradually, the aluminum gallium nitride layer 14 that C doped layer 13 and C doping reduce gradually.
In LED structure provided by the invention, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And both gallium nitride and aluminum gallium nitride between cause the skew of positive and negative charge under the large effect of stress that produces of Macrolattice mismatch, thus the piezoelectric polarization caused, these all can form two-dimensional hole gas at AlGaN/GaN place, thus increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thus reduce the contact resistance of device; Meanwhile, adopt C δ doping, by the electron cloud of its doped layer occur overlapping, greatly weaken ionized impurity scattering, mobility be significantly improved, thus there is high conductivity.
As a kind of specific embodiment, the p-type GaN/AlGaN structure that the C δ in Fig. 3 adulterates only has a p-type GaN/AlGaN unit.Certainly, the p-type GaN/AlGaN structure that C δ of the present invention adulterates is not limited thereto, those skilled in the art can also be as required, multiple p-type GaN/AlGaN unit is set, each p-type GaN/AlGaN unit stacked arrangement, the aluminum gallium nitride layer 14 that namely the C doping of first p-type GaN/AlGaN unit reduces gradually is connected with the p-type gallium nitride layer 11 of the undoped of second p-type gallium nitride unit; Preferably, the number of described p-type gallium nitride unit is 2-7, can improve hole concentration better thus, and relative obtains better crystal structure.
The present invention also provides a kind of preparation method of LED structure, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, n-type gallium nitride layer and luminescent layer;
S22, grow on luminescent layer C δ adulterate p-type GaN/AlGaN structure sheaf, specifically comprise the following steps:
S11, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually;
S23, C δ adulterate p-type GaN/AlGaN structure sheaf on grow p-type gallium nitride layer.
In the preparation method of LED structure provided by the invention, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And both gallium nitride and aluminum gallium nitride between cause the skew of positive and negative charge under the large effect of stress that produces of Macrolattice mismatch, thus the piezoelectric polarization caused, these all can form two-dimensional hole gas at AlGaN/GaN place, thus increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thus reduce the contact resistance of device; Meanwhile, adopt C δ doping, by the electron cloud of its doped layer occur overlapping, greatly weaken ionized impurity scattering, mobility be significantly improved, thus there is high conductivity.
In the preparation method of LED structure provided by the invention, growing method and the choosing of material of each layer of described step S21 are well known to those skilled in the art, therefore repeat no more.
The mode growing the p-type GaN/AlGaN structure sheaf that C δ adulterates in step S22 on luminescent layer is identical with the preparation method of the p-type GaN/AlGaN structure that aforementioned C δ adulterates.As specific embodiment, step S11, S12, S13 and S14 at least 1 time can be repeated, so move in circles, form multiple p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement; Wherein, describedly repeat step S11, S12, S13 and S14 comprise at least 1 time: step S11, S12, S13 and S14 can repeat, and also can not repeat; If repeated, namely using step S11, S12, S13 and S14 as independent cycle, can at least 1 time be repeated, multiple p-type GaN/AlGaN unit as shown in Figure 1 will be formed thus, each p-type GaN/AlGaN unit stacked arrangement, the aluminum gallium nitride layer 14 that namely the C doping of first p-type GaN/AlGaN unit 10 reduces gradually is connected with the p-type gallium nitride layer 11 of the undoped of second p-type GaN/AlGaN unit 10; If do not repeated, in the p-type GaN/AlGaN structure that C δ adulterates, just only has a p-type GaN/AlGaN unit.Preferably, the number of times that described step S11, S12, S13 and S14 repeat is 1-6, and namely the number of described p-type GaN/AlGaN unit is total up to 2-7, can improve hole concentration better thus, and relative obtains better crystal structure.
As a kind of specific embodiment, specifically comprise in described step S23: using trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, dicyclopentadienyl magnesium (Cp
2mg) as p-type doped source, the p-type gallium nitride structure layer that C δ adulterates grows the p-type gallium nitride layer of Mg doping.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (20)
1. the p-type GaN/AlGaN structure of a C δ doping, it is characterized in that, comprise p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprise the p-type gallium nitride layer of tactic undoped, aluminum gallium nitride layer that aluminum gallium nitride layer, C doped layer and C doping that C doping increases gradually reduce gradually; Described C doping is formed by trimethyl aluminium.
2. the p-type GaN/AlGaN structure of C δ doping according to claim 1, it is characterized in that, described p-type GaN/AlGaN unit is multiple, each p-type GaN/AlGaN unit stacked arrangement.
3. the p-type GaN/AlGaN structure of C δ doping according to claim 2, it is characterized in that, the thickness of described each p-type GaN/AlGaN unit is 5-8 nanometer.
4. the p-type GaN/AlGaN structure of C δ doping according to claim 2, it is characterized in that, the number of described p-type GaN/AlGaN unit is 2-7.
5. a preparation method for the p-type GaN/AlGaN structure of C δ doping, is characterized in that, said method comprising the steps of:
S11, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually.
6. the preparation method of the p-type GaN/AlGaN structure of C δ doping according to claim 5, it is characterized in that, repeat step S11, S12, S13 and S14 at least 1 time, so move in circles, form multiple p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.
7. the preparation method of the p-type GaN/AlGaN structure that the C δ according to claim 5 or 6 adulterates, is characterized in that, in the preparation process of described p-type GaN/AlGaN unit, pass into pure hydrogen as carrier gas.
8. the preparation method of the p-type GaN/AlGaN structure that the C δ according to claim 5 or 6 adulterates, it is characterized in that, in described step S12, the flow of trimethyl gallium is 35-55sccm, and the flow of ammonia is 28000-32000sccm.
9. the preparation method of the p-type GaN/AlGaN structure that the C δ according to claim 5 or 6 adulterates, is characterized in that, in described step S12, the duration forming the aluminum gallium nitride layer that C doping increases gradually is 10-15 second.
10. the preparation method of the p-type GaN/AlGaN structure that the C δ according to claim 5 or 6 adulterates, is characterized in that, in described step S13, the duration forming C doped layer is 3-5 second.
The preparation method of the p-type GaN/AlGaN structure that 11. C δ according to claim 5 or 6 adulterate, is characterized in that, in described step S14, the duration forming the aluminum gallium nitride layer that C doping reduces gradually is 10-15 second.
The preparation method of the p-type GaN/AlGaN structure that 12. C δ according to claim 6 adulterate, it is characterized in that, the thickness of described each p-type GaN/AlGaN unit is 5-8 nanometer.
The preparation method of the p-type GaN/AlGaN structure that 13. C δ according to claim 6 adulterate, is characterized in that, the number of times that described step S11, S12, S13 and S14 repeat is 1-6.
14. 1 kinds of LED structures, comprise substrate layer, resilient coating, intrinsic gallium nitride layer, n-type gallium nitride layer, luminescent layer and p-type gallium nitride layer that order is stacked, it is characterized in that, also comprise the p-type GaN/AlGaN structure sheaf being formed at the C δ between luminescent layer and p-type gallium nitride layer and adulterating, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, the aluminum gallium nitride layer that described p-type GaN/AlGaN unit comprises the p-type gallium nitride layer of tactic undoped, C doping increases gradually aluminum gallium nitride layer, C doped layer and C doping reduce gradually; Described C doping is formed by trimethyl aluminium.
15. LED structures according to claim 14, is characterized in that, the number of described p-type GaN/AlGaN unit is multiple, each p-type GaN/AlGaN unit stacked arrangement.
16. LED structures according to claim 15, is characterized in that, the number of described p-type GaN/AlGaN unit is 2-7.
The preparation method of 17. 1 kinds of LED structures, is characterized in that, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, n-type gallium nitride layer and luminescent layer;
S22, grow on luminescent layer C δ adulterate p-type GaN/AlGaN structure sheaf, specifically comprise the following steps:
S11, using trimethyl gallium as gallium source, ammonia as nitrogenous source, growth undoped p-type gallium nitride layer;
S12, using trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, and the p-type nitride layer of undoped is formed the aluminum gallium nitride layer that C doping increases gradually;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keeps the flow of 85-110sccm constant, forms C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, C doped layer is formed the aluminum gallium nitride layer that C doping reduces gradually;
S23, C δ adulterate p-type GaN/AlGaN structure sheaf on grow p-type gallium nitride layer.
The preparation method of 18. LED structures according to claim 17, it is characterized in that, repeat step S11, S12, S13 and S14 at least 1 time, so move in circles, form multiple p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.
The preparation method of 19. LED structures according to claim 18, is characterized in that, the number of times that described step S11, S12, S13 and S14 repeat is 1-6.
The preparation method of 20. LED structures according to claim 17, it is characterized in that, specifically comprise in described step S23: using trimethyl gallium as gallium source, ammonia as nitrogenous source, Cp2Mg, as p-type doped source, the p-type GaN/AlGaN structure sheaf that C δ adulterates grows the p-type gallium nitride layer of Mg doping.
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| CN101073160A (en) * | 2004-12-23 | 2007-11-14 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101095236A (en) * | 2004-11-11 | 2007-12-26 | 艾利森电讯公司 | Method for dopant calibration of delta doped multilayered structure |
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| CN101069289A (en) * | 2004-12-23 | 2007-11-07 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101073160A (en) * | 2004-12-23 | 2007-11-14 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
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