CN102881760B - Infrared sensor and manufacture method thereof - Google Patents
Infrared sensor and manufacture method thereof Download PDFInfo
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- CN102881760B CN102881760B CN201210379764.7A CN201210379764A CN102881760B CN 102881760 B CN102881760 B CN 102881760B CN 201210379764 A CN201210379764 A CN 201210379764A CN 102881760 B CN102881760 B CN 102881760B
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Abstract
The invention discloses a kind of infrared sensor and manufacture method thereof, belong to field of semiconductor devices.Infrared sensor includes: micro-bridge structure unit, the detecting structure unit being arranged on described micro-bridge structure unit; described detecting structure unit includes being successively set on the first release guard on described micro-bridge structure unit and the second release guard layer from top to bottom, and is arranged on the diode between the first release guard layer and the second release guard layer；Described diode includes electrode layer and semiconductor layer, described electrode layer includes being positioned at the positive pole of different layers, negative pole, described semiconductor layer is folded between described positive pole and described negative pole, and described semiconductor layer includes corresponding to the positive pole semiconductor layer of positive pole in described electrode layer, corresponding to the negative pole semiconductor layer of negative pole in described electrode layer.It is relatively costly to carry out that infrared acquisition causes that the present invention solves prior art red use sensitive material.
Description
Technical field
The invention belongs to field of semiconductor devices, specifically, relate to a kind of infrared sensor and manufacture method thereof.
Background technology
Microelectromechanical systems (Micro Electro Mechanical Systems, MEMS) technology has small, intelligence
Can, can perform, can the plurality of advantages such as integrated, processing compatibility good, low cost, therefore it has been widely used and is including infrared acquisition skill
The numerous areas in art field.Infrared sensor is a kind of concrete microelectromechanical systems MEMS in infrared detection technique field
Product, it utilizes sensitive material detecting layer such as non-crystalline silicon or vanadium oxide to absorb infrared ray, thus causes the change of its resistance, accordingly
Realize thermal imaging function.
Figure 10 is infrared sensor structural representation of the prior art.As shown in Figure 10, infrared sense of the prior art
Survey device and be followed successively by heat-sensitive layer 1001, reflector 1002 from top to bottom, be provided with two output circuit pins 1013, each output electricity
A metal stud 1023, altogether two metal studs 1023 vertically it is provided with, in one jiao of company of heat-sensitive layer 1001 on pass foot 1013
It is connected to a metal stud 1023, it can be seen that, form a micro-bridge structure by two metal studs 1002, thus support whole
Heat-sensitive layer 1001.
In the infrared sensor shown in Figure 10, the sensitive material of heat-sensitive layer 1001 is generally selected from non-crystalline silicon, or oxidation
Agent such as vanadium oxide, the temperature-coefficient of electrical resistance (Temperature Coefficient of Resistance, TCR) of non-crystalline silicon is
About 2-3%, and the temperature-coefficient of electrical resistance TCR of vanadium oxide is of a relatively high, for 3-4%, after technique is integrated, the electricity of sensitive material
Resistance temperature coefficient TCR is deteriorated further so that the sensitivity decrease of infrared sensor.In prior art, in order to solve resistance temperature
The degree problem that is deteriorated further of coefficient T CR, improves the sensitivity of infrared sensor, it usually needs by increasing pixel area thus
Increase the area of heat-sensitive layer 1001, but, this solution can cause the increase of cost.
Summary of the invention
The technical problem to be solved is to provide a kind of infrared sensor and manufacture method thereof, existing in order to solve
Using sensitive material to carry out in technology, that infrared acquisition causes is relatively costly.
In order to solve above-mentioned technical problem, the invention provides a kind of infrared sensor, including:
Micro-bridge structure unit, the detecting structure unit being arranged on described micro-bridge structure unit, described detecting structure unit
Including the first release guard being successively set on from top to bottom on described micro-bridge structure unit and the second release guard layer, and
It is arranged on the diode between the first release guard layer and the second release guard layer；Described diode includes electrode layer and quasiconductor
Layer, described electrode layer includes being positioned at the positive pole of different layers, negative pole, described semiconductor layer be folded in described positive pole and described negative pole it
Between, described semiconductor layer includes corresponding to the positive pole semiconductor layer of positive pole in described electrode layer, corresponding to negative in described electrode layer
The negative pole semiconductor layer of pole.
In order to solve above-mentioned technical problem, the invention provides the manufacture method of a kind of infrared sensor, including:
Described micro-bridge structure unit arranges the first release guard of detecting structure unit;
Arranging diode on the first release guard layer, described diode includes electrode layer and semiconductor layer, described electricity
Pole layer includes that the positive pole of different layers, negative pole, described semiconductor layer are folded between described positive pole and described negative pole, described quasiconductor
Layer corresponds to the positive pole semiconductor layer of positive pole in described electrode layer, corresponding to the negative pole semiconductor layer of negative pole in described electrode layer；
Second release guard layer is set on described diode.
Compared with currently existing scheme, by forming diode on micro-bridge structure unit, in this diode, electrode layer includes
Positive pole and negative pole be positioned at different layers, utilize the threshold voltage of diode to decline after absorbing infrared light so that opening of diode
Open more quick, i.e. open diode with less driving voltage interface, obtain bigger diode output electric current simultaneously, thus
Overcome increase pixel area when using sensitive material in prior art and, to improve sensitivity, cause relatively costly defect.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of infrared sensor embodiment of the present invention；
Fig. 2 is the cut-away view of infrared sensor embodiment one of the present invention;
Fig. 3 is the simple equivalent circuit figure of Fig. 2 mid-infrared sensor;
Fig. 4 is the sectional view of infrared sensor embodiment two of the present invention;
Fig. 5 is the simple equivalent circuit figure of Fig. 4 mid-infrared sensor;
Fig. 6 is the sectional view of infrared sensor embodiment three of the present invention;
Fig. 7 is the sectional view of infrared sensor embodiment four of the present invention;
Fig. 8 is the schematic diagram of the electrical connection of electrode in Fig. 7；
Fig. 9 is the manufacture method embodiment schematic flow sheet of Infrared Detectors of the present invention；
Figure 10 is infrared sensor structural representation of the prior art.
Detailed description of the invention
Describe embodiments of the present invention in detail below in conjunction with graphic and embodiment, thereby how the present invention is applied
Technological means solves technical problem and reaches the process that realizes of technology effect and can fully understand and implement according to this.
In the following embodiment of the present invention, by forming diode, electrode layer in this diode on micro-bridge structure unit
Including positive pole and negative pole be positioned at its semiconductor layer both sides included, utilize the threshold voltage of diode under absorbing after infrared light
Fall so that the unlatching of diode is more quick, i.e. opens diode with less driving voltage interface, obtains bigger two simultaneously
Pole pipe output electric current, thus overcome increase pixel area when using sensitive material in prior art and, to improve sensitivity, cause
Relatively costly defect.
Infrared sensor embodiment
Fig. 1 is the schematic perspective view of infrared sensor embodiment of the present invention.As it is shown in figure 1, the infrared sense in the present embodiment
Survey device includes: micro-bridge structure unit 101 and detecting structure unit 102, and detecting structure unit is arranged on micro-bridge structure unit 101
On, detecting structure unit 102 includes first release guard layer the 112, the second release guard layer 122 set gradually from down to up,
And it is arranged on the diode (not shown) between the first release guard layer 112 and the second release guard layer 122, this two pole
Pipe can be arranged according to the actual requirements, the most one or more；Each diode includes electrode layer (not shown) and partly leads
Body layer (not shown), electrode layer includes positive pole and the negative pole (not shown) of different layers, each diode described just
Be folded with described semiconductor layer between pole and described negative pole, semiconductor layer corresponding in electrode layer positive pole positive pole semiconductor layer and
The negative pole semiconductor layer of negative pole, wherein the material of positive pole and negative pole is metal tantalum Ta, tantalum nitride TaN, titanium Ti, titanium nitride TiN, aluminum
One of Al, tungsten W or the most several combinations.First release guard layer the 112, second release guard in detecting structure unit 102
Layer 122, and the diode that is arranged between the first release guard layer 112 and the second release guard layer 122 arranges and can refer to down
State embodiment.
In the present embodiment, the material of described first release guard layer and described second release guard layer be silicon, silicon dioxide,
Silicon oxynitride, silicon nitride or carborundum；Or, the material of the first release guard layer and the second release guard layer is for non-chemically to count
The amount silicon dioxide of ratio, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride or Silicon-rich carborundum.
In the present embodiment, the material of described first release guard layer and described second release guard layer is mixed with impurity
Silicon, silicon dioxide, silicon oxynitride, silicon nitride or carborundum；Or, described first release guard layer and described second release are protected
The material of sheath is the silicon dioxide mixed with impurity of non-stoichiometric, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride
Silicon or Silicon-rich carborundum, described impurity includes boron, phosphorus, carbon or fluorine.
In the present embodiment, micro-bridge structure unit 101 can include 4 support columns 111, unsettled knot is thermally isolated to be formed
Structure, wherein, has 2 support columns while playing a supportive role, is electrically connected the positive pole in described electrode layer and negative pole, separately
The most remaining 2 support columns are only played a supporting role.Further, for the ease of support column 111 and corresponding positive pole and negative pole
Electrical connection, can lay output pin 121 on described second release guard layer 122 and connect wire 131, and positive pole and negative pole pass through
Corresponding output pin 121 and connection wire 131 electrically connect with corresponding support column 111 respectively.
Further, in the present embodiment, in order to increase the absorption efficiency of infrared light, arrange for 102 times at detecting structure unit
One metallic reflector 141, makes infrared light uniform transmission, to improve its absorption efficiency.This metallic reflector 103 is by 4 supports
Post 111 encloses and is located at centre.
It will appreciated by the skilled person that the micro-bridge structure unit in this enforcement is not limited to above-mentioned this tool
The structure of body, as long as this heat insulation structural can be formed.Such as can also only use and amount to 3 corresponding to grid, source electrode, drain electrode
Individual support column is formed.It addition, support column can by other can support and/or electrical connection metallic walls replace.
Fig. 2 is the sectional view of infrared sensor embodiment one of the present invention.As in figure 2 it is shown, the first release guard layer 201 and
Arranging a diode between two release guard layers 202, described diode (not shown) includes that the first electrode layer (does not shows in figure
Go out) and the first semiconductor layer (not shown), described first electrode layer includes first positive pole the 213, first negative pole 223, described
First negative pole 223 is embedded between described first release guard layer and described first semiconductor layer, and described first positive pole 213 is embedded in institute
Stating between the first semiconductor layer and described second release guard layer, described first semiconductor layer includes corresponding to described first positive pole
First negative pole semiconductor layer 224 of 213 first positive pole semiconductor layer the 214, first negative poles 223 arranged.In the present embodiment, specifically
Ground, in described first semiconductor layer, the first positive pole semiconductor layer 214 of corresponding described first positive pole 213 is arranged on described in correspondence
On the semiconductor layer 224 of the first negative pole 223, but it is also not limited to this concrete mode, as long as PN junction can be formed.This
In embodiment, described first negative pole 223 can be located at the bottom of described first negative pole semiconductor layer 224, but is also not limited to this
Plant concrete mode.
In the present embodiment, in order to increase the PN junction area formed between the first positive pole 213 and the second negative pole 223, described the
Corresponding to the first positive pole semiconductor layer 214 and corresponding described first negative pole 223 of described first positive pole 213 in semi-conductor layer
First semiconductor layer 224 is the most embedded, such as in figure 2 it is shown, work as in described first semiconductor layer corresponding to described first
First positive pole semiconductor layer 214 of positive pole 213 be arranged on corresponding described first negative pole 223 first negative pole semiconductor layer 224 it
Time upper, the form with concaveconvex shape is embedded each other, certainly, comes institute for those of ordinary skill in the art, it is possibility to have its
The mode that he is embedded, does not repeats them here.
In the present embodiment, corresponding to the first positive pole semiconductor layer of described first positive pole 213 in described first semiconductor layer
214, the material of the first negative pole semiconductor layer 224 of the first negative pole 223 can be respectively P-type non-crystalline silicon material, N-type non-crystalline silicon material
Material, or, corresponding to first positive pole semiconductor layer the 214, first negative pole of described first positive pole 213 in described first semiconductor layer
The material of the first negative pole semiconductor layer 224 of 223 can be respectively N-type amorphous silicon material, P-type non-crystalline silicon material.
Fig. 3 is the simple equivalent circuit figure of Fig. 2 mid-infrared sensor.As it is shown on figure 3, as it is shown on figure 3, when there being infrared light to shine
When penetrating, diode 203 absorbs and infrared causes temperature to rise, thus causes the threshold voltage vt of the first positive pole 213 to decline, thus leads
The drain current Id causing the first negative pole 223 rises, therefore, as long as suitably regulating the driving voltage of the first positive pole 213 actual loaded
When certain area, bigger cathodal current Id can be brought to change.
As can be seen here, due to diode 203 absorb infrared after the threshold voltage vt of the first positive pole 213 can be caused to decline, and
Finally cause the electric current Id of the first negative pole 223 in the trend rising change.So that load less driving at the first positive pole 213
Galvanic electricity pressure can make diode 203 turn on, thus obtains into the cathodal current Id of rising change, infrared with the sensitiveest measurement
Light, if the sensitivity of infrared sensor to be improved have to increase the solution phase of heat-sensitive layer area with prior art
Ratio, cost is relatively low.
Fig. 4 is the sectional view of Infrared Detectors embodiment two of the present invention.As shown in Figure 4, in the present embodiment, shown in Fig. 2
On the basis of add again a diode, thus form two diodes.Increase diode (not shown) in second
Electrode layer (not shown) and the second semiconductor layer (not shown) are positioned at the first release guard layer 301 and the second release is protected
Between sheath 302, described the second electrode lay includes the second positive pole 315 and the second negative pole 325, and it is right that described second semiconductor layer includes
Answer the second positive pole semiconductor layer 316 and the second negative pole semiconductor layer of described second negative pole 325 of correspondence of described second positive pole 315
326, described second positive pole 315 is embedded in the second positive pole semiconductor layer 316 and described second release guard in the second semiconductor layer
Between layer 302, described second negative pole 325 is arranged in the second quasiconductor in the second negative pole semiconductor layer 326 of correspondence, and described the
Two negative pole semiconductor layers 326 are between described first positive pole semiconductor layer 314 and described second positive pole semiconductor layer 316.Institute
State the second positive pole semiconductor layer 316 described in the second semiconductor layer to be arranged on described second negative pole semiconductor layer 326.Described
Second negative pole semiconductor layer 326 described in second semiconductor layer is arranged on described first positive pole semiconductor layer 314, described
Under two positive pole semiconductor layers 316.Be additionally provided with on described first positive pole 313 first positive pole auxiliary semiconductor layer 334, with
Described first positive pole semiconductor layer 314 is coated with described first positive pole 313.
In the present embodiment, specifically, in described second semiconductor layer, the second positive pole of corresponding described second positive pole 315 is partly led
Body layer 316 is arranged on the second negative pole semiconductor layer 326 of corresponding described second negative pole 325.Same as the previously described embodiments, in order to
Increase the area of PN junction between two electrodes, in described second semiconductor layer, second positive pole half of corresponding described second positive pole 315
Conductor layer 316 is the most embedded with the second negative pole semiconductor layer 326 of corresponding described second negative pole 325, the most embedded
Can there is a various ways, such as the most embedded etc. with concaveconvex shape.Second negative pole quasiconductor described in described second semiconductor layer
Layer 326 is the most embedded with described first positive pole auxiliary semiconductor layer 334, specifically, and can be the most embedded with concaveconvex shape.
In the present embodiment, specifically, in described second semiconductor layer, the second negative pole of corresponding described second negative pole 325 is partly led
Body layer 326 is arranged on the first positive pole semiconductor layer 314 that described first positive pole 313 is corresponding in described first quasiconductor,
Under second positive pole semiconductor layer 316.Specifically, the second of corresponding described second negative pole 325 negative in described second semiconductor layer
The first positive pole semiconductor layer 314 that pole semiconductor layer 326 is corresponding in described first quasiconductor with described first positive pole 313 is mutual
Between embedded.The most embedded can have various ways, corresponding described second negative pole 325 in the most described second semiconductor layer
The second negative pole semiconductor layer 326 simultaneously with the first negative pole semiconductor layer that concaveconvex shape is corresponding with described first quasiconductor
314 and described second semiconductor layer in the second positive pole semiconductor layer 316 of corresponding described second positive pole 315 embedded etc..Described
Semiconductor layer 314 corresponding in semiconductor is the most corresponding with described second semiconductor layer described second negative with concavo-convex shape
Semiconductor layer 324 corresponding in semiconductor layer 326, first quasiconductor of pole 325 is embedded.
In the present embodiment, further, in the above-described embodiments, the first positive pole and the second positive pole at the first semiconductor layer and
Semiconductor layer corresponding in second semiconductor layer can use same amorphous silicon material, corresponding institute in described second semiconductor layer
State the second positive pole semiconductor layer 316 of the second positive pole 315 and the second negative pole semiconductor layer 326 of corresponding described second negative pole 325
Material can be respectively P-type non-crystalline silicon material, N-type amorphous silicon material, or, in described second semiconductor layer corresponding described the
The material of the second positive pole semiconductor layer 316 of two positive poles 315 and the second negative pole semiconductor layer 326 of corresponding described second negative pole 325
Material can be respectively N-type amorphous silicon material, P-type non-crystalline silicon material.
Fig. 5 is the simple equivalent circuit figure of Fig. 4 mid-infrared sensor.As it is shown in figure 5, Fig. 4 mid-infrared sensor is actually
Diode 303, the parallel connection of diode 304 can be equivalent to, each own respective electrode layer of each diode and semiconductor layer.With two
Shown in pole pipe 303, carry out infrared sensing principle explanation.For one of them diode 303, when there being Infrared irradiation
Time, diode 303 absorbs and infrared causes temperature to rise, thus cause the threshold voltage vt of the first positive pole 313 to decline, thus causes
The drain current Id of the first negative pole 323 rises, therefore, as long as the driving voltage suitably regulating the first positive pole 313 actual loaded exists
During certain area, bigger cathodal current Id can be brought to change.First positive pole 315 and the second negative pole 325 in diode 305
By Infrared irradiation principle with diode 303, do not repeat them here.
Fig. 6 is the sectional view of infrared sensor embodiment three of the present invention.As shown in Figure 6, the first release guard layer 401 He
Be further added by the second electrode lay and the second semiconductor layer (not shown) between second release guard layer 402, with formed another two
Pole is managed；Described the second electrode lay includes that the second positive pole 415, described second semiconductor layer include corresponding described first negative pole 423
First negative pole auxiliary semiconductor layer 424 and the second positive pole semiconductor layer 416 of described second positive pole 415 of correspondence, described second just
Pole 415 be embedded in described second semiconductor layer correspondence the second positive pole semiconductor layer 416 and described first release guard layer 401 it
Between, in described second semiconductor layer, the first negative pole semiconductor layer 424 of corresponding described first negative pole 423 is arranged on described the second half
In conductor layer on the second positive pole semiconductor layer 416 of corresponding described second positive pole 415, under the first positive pole semiconductor layer 414.
Said structure has effectively formed two diodes, shares the first negative pole 423, the most each set between the two diode
It is equipped with respective first positive pole 413 and the second positive pole 415.
In the present embodiment, under described first negative pole semiconductor layer 424, it is provided with on the second positive pole semiconductor layer 416
First negative pole auxiliary semiconductor layer 424.
In the present embodiment, the second positive pole semiconductor layer 416 of corresponding described second positive pole 415 in described second semiconductor layer
First negative pole auxiliary semiconductor layer 424 of described first negative pole 423 corresponding with described first semiconductor layer is the most embedded,
Such as, include that the second positive pole semiconductor layer 416 of corresponding described second positive pole 415 is led with described the first half when the second semiconductor layer
Time in body layer under the first negative pole auxiliary semiconductor layer 424 of corresponding described first negative pole 423, concaveconvex shape is used to realize mutually
Between embedded, to increase PN junction area.
In the present embodiment, the material of the second positive pole semiconductor layer 416 described in described second semiconductor layer and the first half is led
In body layer, the material of the first positive pole semiconductor layer 414 is correspondingly arranged, and i.e. uses identical semi-conducting material, described second quasiconductor
In Ceng, the material of the second positive pole semiconductor layer 416 of corresponding described second positive pole 415 can be P-type non-crystalline silicon material；Or, institute
Stating the material of the second positive pole semiconductor layer 416 of corresponding described second positive pole 415 in the second semiconductor layer can be N-type non-crystalline silicon
Material.
Fig. 7 is the sectional view of infrared sensor embodiment four of the present invention.As it is shown in fig. 7, the first release guard layer 501 He
The second electrode lay and the second semiconductor layer (not shown) is increased, to form another two pole between second release guard layer 502
Pipe, described the second electrode lay includes that the second negative pole 525, described second semiconductor layer include the of corresponding described first positive pole 513
One positive pole auxiliary semiconductor layer 517 and the second negative pole semiconductor layer 516 of described second negative pole 525 of correspondence, described the second half lead
In body layer, the semiconductor layer 517 of corresponding described first positive pole 513 is arranged in described second semiconductor layer corresponding described second negative
Under second negative pole semiconductor layer 516 of pole 525, on the first positive pole semiconductor layer 514, described second negative pole 525 is arranged on
Between its second negative pole semiconductor layer 516 and described second release guard layer 502 corresponding in the second semiconductor layer.This enforcement
In example, be equivalent to two diodes, shared positive pole, but each own respective negative pole.
In the present embodiment, in order to reduce process costs, in described second semiconductor layer the of corresponding described first positive pole 513
First positive pole quasiconductor of one positive pole auxiliary semiconductor layer 517 described first positive pole 513 corresponding with described first semiconductor layer
Layer 514 is shared, the formation such that it is able to two-layer semiconductor layer connects.It addition, in described second semiconductor layer corresponding described first just
The first of first positive pole auxiliary semiconductor layer 517 described first positive pole 513 corresponding with described first semiconductor layer of pole 513 is just
Pole semiconductor layer 514 can also be separately provided, to separate formation.
When the semiconductor layer of multiple/layer device (as a example by PN junction) connects, be equivalent to pass through quasiconductor at multiple PN junctions
Layer is connected to form serial/parallel link structure, and during shared electrode, is then connected to form the parallel-connection structure of PN junction by electrode；During separation, by
In shared electrode or arrange electrode annexation, be equivalent to be connected to form the parallel-connection structure of PN junction by electrode.
In the present embodiment, in order to increase PN junction area, in described first semiconductor layer the of corresponding described first positive pole 513
Second negative pole semiconductor layer 516 of one positive pole semiconductor layer 514 described second negative pole 525 corresponding with described second semiconductor layer
The most embedded.Embedded mode can be found in above-described embodiment, does not repeats them here.Described in described second semiconductor layer
One positive pole auxiliary semiconductor layer 517 is the most permissible with the second negative pole semiconductor layer 516 described in described second semiconductor layer
Embedded connect, specifically, can connect so that concaveconvex shape is the most embedded.
In the present embodiment, described in described second semiconductor layer, first positive pole auxiliary semiconductor layer the 517, second negative pole is partly led
The material of body layer 516 respectively with first positive pole semiconductor layer the 514, first negative pole semiconductor layer 524 in described first semiconductor layer
Material corresponding, the first positive pole auxiliary semiconductor layer 517 of corresponding described first positive pole 513 in described second semiconductor layer, the
The material of the second negative pole semiconductor layer 516 of two negative poles 525 can be respectively P-type non-crystalline silicon material, N-type amorphous silicon material；Or
Person, first positive pole auxiliary semiconductor layer the 517, second negative pole 525 of corresponding described first positive pole 513 in described second semiconductor layer
The material of the second negative pole semiconductor layer 516 can also be respectively N-type amorphous silicon material, P-type non-crystalline silicon material.
Fig. 8 is the electrical connection schematic diagram of electrode in Fig. 7.As shown in Figure 8, the first negative pole 523 and the second negative pole 525 can lead to
Cross conductive through hole electrical connection.In an other embodiment, it is also possible to be electrically connected by the groove of deposition metal.
Intelligible, in the above-described embodiments, can be found in shown in Fig. 8, described first positive pole, the first negative pole are logical by conduction
The groove of hole or deposition metal connects with the second corresponding positive pole, the second negative electricity respectively.Do not repeat them here,
The circuit diagram of above-mentioned Fig. 6-Fig. 8 mid-infrared sensor can be equivalent to two diodes, therefore, with reference to real shown in Fig. 5
The principle executing example is identical, does not repeats them here.
In the above-described embodiments, also include being arranged between described first release guard layer and the second release guard layer
Function auxiliary layer.Concrete, on the premise of not affecting infrared sensor electrical connection, function auxiliary layer can be set flexibly, such as,
Function auxiliary layer is set between the second release guard layer and the first semiconductor layer, or, at the first release guard layer and first
Function auxiliary layer etc. is set between electrode layer.Specifically, described function auxiliary layer can include supporting layer, stress equilibrium layer or
Infrared absorption layer.Specifically, the material of described function auxiliary layer is silicon, silicon dioxide, silicon oxynitride, silicon nitride or carbonization
Silicon；Or, the material of described function auxiliary layer be the silicon dioxide of non-stoichiometric, silicon oxynitride, silicon nitride, carborundum,
Silicon-rich silicon nitride or Silicon-rich carborundum；Or, the material of described function auxiliary layer is the silicon mixed with impurity, silicon dioxide, nitrogen oxygen
SiClx, silicon nitride or carborundum；Or, the titanium dioxide that material is doping non-stoichiometric of described function auxiliary layer
Silicon, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride or Silicon-rich carborundum, described impurity includes boron, phosphorus, carbon or fluorine.
The manufacture method of infrared sensor
Fig. 9 is the manufacture method embodiment schematic flow sheet of Infrared Detectors of the present invention.As it is shown in figure 9, this infrared sensing
The manufacture method of device, including:
Step 901, the first release guard of detecting structure unit is set on described micro-bridge structure unit;
Step 902, arranging diode on the first release guard layer, described diode includes electrode layer and quasiconductor
Layer, described electrode layer includes that the positive pole of different layers, negative pole, described semiconductor layer are folded between described positive pole and described negative pole,
Described semiconductor layer corresponds to the positive pole semiconductor layer of positive pole in described electrode layer, corresponding to the negative pole of negative pole in described electrode layer
Semiconductor layer；
Step 903, the second release guard layer is set on described diode.
In the present embodiment, step 902 may include that
On described first release guard layer, the first negative pole in the first electrode layer is set；
Its first negative pole quasiconductor corresponding in the first semiconductor layer is set on the first negative pole in the first electrode layer
Layer；
The first negative pole semiconductor layer according to described first negative pole corresponding in described first semiconductor layer arranges the first half and leads
The first positive pole semiconductor layer in body layer, specifically, is arranged in described first semiconductor layer in the way of the most embedded
First positive pole semiconductor layer and described first negative pole semiconductor layer；
Described in the first semiconductor layer, the first positive pole semiconductor layer arranges the first positive pole in the first electrode layer.
In an other embodiment, can in step 902 according in described first semiconductor layer corresponding described first
After first negative pole semiconductor layer of negative pole arranges the first positive pole semiconductor layer in the first semiconductor layer, it is also possible to including:
The first positive pole semiconductor layer in the first semiconductor layer arranges the second negative pole in the second semiconductor layer half
Conductor layer, the second negative pole that described second negative pole semiconductor layer is embedded with in the second electrode lay；
According to the second negative pole semiconductor layer described in the second semiconductor layer, the second positive pole in the second semiconductor layer half is set
Conductor layer, and the second negative pole in two electrode layers is set in described second positive pole semiconductor layer, specifically, with each other
Embedded mode arranges the described second negative pole semiconductor layer in the second semiconductor layer and the second positive pole in the second semiconductor layer
Semiconductor layer.
In an other embodiment, in step 902, it is set on the first negative pole in the first electrode layer first
Can also include before the first negative pole semiconductor layer corresponding in semiconductor layer:
Second positive pole of the second electrode lay is set on described first release guard layer；
Second positive pole half of corresponding described second positive pole in described second semiconductor layer is set on described second positive pole
Conductor layer；
The second positive pole semiconductor layer according to described second positive pole corresponding in described second semiconductor layer arranges the second half and leads
First negative pole auxiliary semiconductor layer of corresponding described first negative pole in body layer, specifically, the second positive pole semiconductor layer and first negative
Semiconductor layer is the most embedded connects for pole auxiliary.
In an other embodiment, the first positive pole semiconductor layer described in the first semiconductor layer in step 902 it
On the first positive pole in the first electrode layer is set after can also include:
First positive pole auxiliary half of corresponding described first positive pole in the second semiconductor layer is set on described first positive pole
Conductor layer；
The first positive pole auxiliary semiconductor layer according to described first positive pole corresponding in the second semiconductor layer arranges the second half and leads
The second negative pole semiconductor layer in body layer, specifically, the first positive pole auxiliary semiconductor layer and described second negative pole semiconductor layer phase
Embedded between Hu connect；
Described in the second semiconductor layer, the second negative pole semiconductor layer arranges the second negative pole.
Manufacture method in above-described embodiment, is forming semiconductor layer the such as first semiconductor layer or the second semiconductor layer
Time, its manufacturing process is CVD technology, is decomposed to form non-crystalline silicon by SiH4 gas, by the CVD technology of the impurity gas such as B2H6
In-situ doping realize, or manufacturing process is CVD technology, is decomposed to form non-crystalline silicon by SiH4 gas, passes through PH3
Deng impurity gas CVD technology in-situ doping realize.In forming electrode layer during electrode such as negative or positive electrode, it is logical
Cross the deposition of electrode material and graphically realize.Furthermore it is also possible to removing semiconductor layer and electrode layer such as positive pole and bearing
The oxide extremely gone up, such as utilizes H2 to react.
Manufacture method in above-described embodiment, it is also possible to including: make institute by the groove of conductive through hole or deposition metal
State the first positive pole, the first negative pole to connect with the second corresponding positive pole, the second negative electricity respectively.This step can be according to technique need
Want, be carried out after forming the first positive pole and the first negative pole, or, formed the first positive pole, the first negative pole, the second positive pole,
Performing after second negative pole.
Manufacture method in the above-described embodiments, described micro-bridge structure unit includes: be electrically connected in described electrode layer
In positive pole, the support column of negative pole.Accordingly, above-mentioned manufacture method can also include: first on described second release guard layer
Lay output pin and connect wire；Divide secondly by positive pole, negative pole described in corresponding described output pin and connection wire
Not with corresponding described support column electrical connection.This step can perform after forming micro-bridge structure unit, it is also possible to according to work
Skill demand, performs after forming probe unit structure.
Manufacture method in above-described embodiment, it is also possible to including: metallic reflection is set below described detecting structure unit
Layer.According to technological requirement, this step can perform after forming micro-bridge structure unit, it is also possible to is forming detecting structure unit
Perform afterwards.
Manufacture method in above-described embodiment, it is also possible to including: at described first release guard layer and the second release guard
Function auxiliary layer is set between Ceng.According to technological requirement, this step can perform after the electrode layer is formed, or is forming half
Perform after conductor layer, as long as not destroying the electrical connection of infrared detection device.Described function auxiliary layer can include propping up
Support layer, stress equilibrium layer or infrared absorption layer.
Described above illustrate and describes some preferred embodiments of the present invention, but as previously mentioned, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments, and can be used for other combinations various,
Amendment and environment, and can be in invention contemplated scope described herein, by above-mentioned teaching or the technology of association area or knowledge
It is modified.And the change that those skilled in the art are carried out and change are without departing from the spirit and scope of the present invention, the most all should be at this
In the protection domain of bright claims.
Claims (54)
1. an infrared sensor, it is characterised in that including: micro-bridge structure unit, be arranged on described micro-bridge structure unit
Detecting structure unit, described detecting structure unit includes being successively set on first on described micro-bridge structure unit from top to bottom
Release guard layer and the second release guard layer, and it is arranged on two poles between the first release guard layer and the second release guard layer
Pipe；Described diode includes that electrode layer and semiconductor layer, described electrode layer include being positioned at the positive pole of different layers, negative pole, described half
Conductor layer is folded between described positive pole and described negative pole, and described semiconductor layer corresponding to positive pole in described electrode layer just includes
Pole semiconductor layer, corresponding to the negative pole semiconductor layer of negative pole in described electrode layer.
Infrared sensor the most according to claim 1, it is characterised in that described diode includes the first electrode layer and first
Semiconductor layer, described first electrode layer includes that the first positive pole, the first negative pole, described first negative pole are embedded in described first release guard
Between layer and described first semiconductor layer, described first positive pole is embedded in described first semiconductor layer and described second release guard layer
Between, described first semiconductor layer include the first positive pole semiconductor layer corresponding to described first positive pole, the first of the first negative pole
Negative pole semiconductor layer.
Infrared sensor the most according to claim 2, it is characterised in that described first negative pole is located at described first negative pole half
Bottom conductor layer.
Infrared sensor the most according to claim 2, it is characterised in that the first positive pole described in described first semiconductor layer
Semiconductor layer is arranged on described first negative pole semiconductor layer.
Infrared sensor the most according to claim 4, it is characterised in that the first positive pole described in described first semiconductor layer
Semiconductor layer is the most embedded with described first negative pole semiconductor layer to connect.
Infrared sensor the most according to claim 5, it is characterised in that the first positive pole described in described first semiconductor layer
Semiconductor layer connects so that concaveconvex shape is embedded each other with described first negative pole semiconductor layer.
Infrared sensor the most according to claim 2, it is characterised in that the first positive pole described in described first semiconductor layer
Semiconductor layer, the material of the first negative pole semiconductor layer are respectively P-type non-crystalline silicon material, N-type amorphous silicon material, or, described
First positive pole semiconductor layer described in semi-conductor layer, the material of the first negative pole semiconductor layer are respectively N-type amorphous silicon material, P
Type amorphous silicon material.
Infrared sensor the most according to claim 2, it is characterised in that also include the second electrode lay and the second quasiconductor
Layer, to form another diode, described the second electrode lay includes that the second positive pole and the second negative pole, described second semiconductor layer include
Second positive pole semiconductor layer of corresponding described second positive pole and the second negative pole semiconductor layer of described second negative pole of correspondence, described the
Two positive poles are embedded between described second positive pole semiconductor layer and described second release guard layer, and described second negative pole is arranged on described
In second negative pole semiconductor layer of the second semiconductor layer, described second negative pole semiconductor layer is positioned at described first positive pole semiconductor layer
And between described second positive pole semiconductor layer.
Infrared sensor the most according to claim 8, it is characterised in that be just additionally provided with first on described first positive pole
Pole auxiliary semiconductor layer, to be coated with described first positive pole with described first positive pole semiconductor layer.
Infrared sensor the most according to claim 8, it is characterised in that described in described second semiconductor layer, second just
Pole semiconductor layer is arranged on described second negative pole semiconductor layer.
11. infrared sensors according to claim 10, it is characterised in that described in described second semiconductor layer, second is negative
Pole semiconductor layer is arranged under described first positive pole semiconductor layer, described second positive pole semiconductor layer.
12. infrared sensors according to claim 11, it is characterised in that described in described second semiconductor layer, second just
Pole semiconductor layer is the most embedded with described second negative pole semiconductor layer to connect.
13. infrared sensors according to claim 12, it is characterised in that described in described second semiconductor layer, second just
Pole semiconductor layer connects so that concaveconvex shape is embedded each other with described second negative pole semiconductor layer.
14. infrared sensors according to claim 8, it is characterised in that described in described second semiconductor layer, second is negative
Pole semiconductor layer is the most embedded with described first positive pole auxiliary semiconductor layer.
15. infrared sensors according to claim 14, it is characterised in that described in described second semiconductor layer, second is negative
Pole semiconductor layer connects so that concaveconvex shape is embedded each other with described first positive pole auxiliary semiconductor layer.
16. infrared sensors according to claim 8, it is characterised in that described in described second semiconductor layer, second just
Pole semiconductor layer, material and the first positive pole quasiconductor described in described first semiconductor layer of described second negative pole semiconductor layer
Layer, described first negative pole semiconductor layer material corresponding, the second positive pole semiconductor layer described in described second semiconductor layer, described
The material of the second negative pole semiconductor layer is respectively P-type non-crystalline silicon material, N-type amorphous silicon material, or, described second semiconductor layer
Described in the second positive pole semiconductor layer, the material of the second negative pole semiconductor layer be respectively N-type amorphous silicon material, P-type non-crystalline silicon material
Material.
17. infrared sensors according to claim 2, it is characterised in that also include the second electrode lay and the second quasiconductor
Layer, is arranged between described first negative pole and described first release guard layer, to form another diode；Described the second electrode lay
Including the second positive pole, described second semiconductor layer includes the first negative pole auxiliary semiconductor layer and correspondence of corresponding described first negative pole
Second positive pole semiconductor layer of described second positive pole, described second positive pole is embedded in the second positive pole in described second semiconductor layer and partly leads
Between body layer and described first release guard layer, described in described second semiconductor layer, the first negative pole auxiliary semiconductor layer is arranged on
Under second positive pole semiconductor layer described in described second semiconductor layer, the first positive pole semiconductor layer.
18. infrared sensors according to claim 17, it is characterised in that under described first negative pole semiconductor layer,
Second positive pole semiconductor layer is provided with described first negative pole auxiliary semiconductor layer.
19. infrared sensors according to claim 18, it is characterised in that in described second semiconductor layer corresponding described the
Semiconductor layer is the most embedded connects with described first negative pole auxiliary for second positive pole semiconductor layer of two positive poles.
20. infrared sensors according to claim 19, it is characterised in that in described second semiconductor layer corresponding described the
Second positive pole semiconductor layer of two positive poles connects so that concaveconvex shape is embedded each other with described first negative pole auxiliary semiconductor layer.
21. infrared sensors according to claim 17, it is characterised in that described in described second semiconductor layer, second just
In the material of pole semiconductor layer and the first semiconductor layer, the material of the first positive pole semiconductor layer is correspondingly arranged, described second quasiconductor
Described in Ceng, the material of the second positive pole semiconductor layer is P-type non-crystalline silicon material；Or, described in described second semiconductor layer second
The material of positive pole semiconductor layer is N-type amorphous silicon material.
22. infrared sensors according to claim 2, it is characterised in that also include the second electrode lay and the second quasiconductor
Layer, to form another diode, described the second electrode lay includes that the second negative pole, described second semiconductor layer include corresponding described the
First positive pole auxiliary semiconductor layer and the second negative pole semiconductor layer of described second negative pole of correspondence of one positive pole, described the second half lead
Described in body layer first positive pole auxiliary semiconductor layer be arranged on the second negative pole semiconductor layer described in described second semiconductor layer it
Under, the first positive pole semiconductor layer, described second negative pole is arranged on the second negative pole semiconductor layer in described second semiconductor layer
And between described second release guard layer.
23. infrared sensors according to claim 22, it is characterised in that described in described second semiconductor layer, first just
Pole auxiliary semiconductor layer connects with the first positive pole semiconductor layer described in described first semiconductor layer or separates.
24. infrared sensors according to claim 23, it is characterised in that described in described second semiconductor layer, first just
Pole auxiliary semiconductor layer connects with described in described second semiconductor layer, the second negative pole semiconductor layer is the most embedded.
25. infrared sensors according to claim 24, it is characterised in that described in described second semiconductor layer, first just
Pole auxiliary semiconductor layer is embedded with concaveconvex shape each other with the second negative pole semiconductor layer described in described second semiconductor layer
Connect.
26. infrared sensors according to claim 22, it is characterised in that described in described second semiconductor layer, first just
Pole auxiliary semiconductor layer, the second negative pole semiconductor layer material respectively with the first positive pole quasiconductor in described first semiconductor layer
Layer, the first negative pole semiconductor layer material corresponding, the first positive pole auxiliary semiconductor layer described in described second semiconductor layer, second
The material of negative pole semiconductor layer is respectively P-type non-crystalline silicon material, N-type amorphous silicon material；Or, institute in described second semiconductor layer
State the first positive pole auxiliary semiconductor layer, the material of the second negative pole semiconductor layer is respectively N-type amorphous silicon material, P-type non-crystalline silicon material
Material.
27. infrared sensors according to claim 8, it is characterised in that described first positive pole, the first negative pole are by conduction
The groove of through hole or deposition metal connects with the second corresponding positive pole, the second negative electricity respectively.
28. infrared sensors according to claim 1, it is characterised in that described micro-bridge structure unit includes: support column,
It is electrically connected to the positive pole in described electrode layer, negative pole by support column.
29. infrared sensors according to claim 28, it is characterised in that lay defeated on described second release guard layer
Going out pin and connect wire, described positive pole, negative pole are by corresponding described output pin and connect wire respectively with corresponding
Described support column electrically connects.
30. infrared sensors according to claim 1, it is characterised in that also include being arranged on described detecting structure unit
The metallic reflector of lower section.
31. infrared sensors according to claim 1, it is characterised in that the material of described positive pole and negative pole be metal tantalum,
One of tantalum nitride, titanium, titanium nitride, aluminum, tungsten or the most several combinations.
32. infrared sensors according to claim 1, it is characterised in that described first release guard layer and described second
The material of release guard layer is silicon, silicon dioxide, silicon oxynitride, silicon nitride or carborundum；Or, the first release guard layer and
The material of the second release guard layer is the silicon dioxide of non-stoichiometric, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride
Silicon or Silicon-rich carborundum.
33. infrared sensors according to claim 1, it is characterised in that described first release guard layer and described second
The material of release guard layer is the silicon mixed with impurity, silicon dioxide, silicon oxynitride, silicon nitride or carborundum；Or, described
The material of one release guard layer and described second release guard layer is the silicon dioxide mixed with impurity of non-stoichiometric, nitrogen oxygen
SiClx, silicon nitride, carborundum, silicon-rich silicon nitride or Silicon-rich carborundum, described impurity includes boron, phosphorus, carbon or fluorine.
34. infrared sensors according to claim 1, it is characterised in that also include being arranged on described first release guard
Function auxiliary layer between layer and the second release guard layer.
35. infrared sensors according to claim 34, it is characterised in that described function auxiliary layer includes supporting layer, answers
Dynamic balance layer or infrared absorption layer.
36. infrared sensors according to claim 34, it is characterised in that the material of described function auxiliary layer be silicon, two
Silicon oxide, silicon oxynitride, silicon nitride or carborundum；Or, material is non-stoichiometric the two of described function auxiliary layer
Silicon oxide, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride or Silicon-rich carborundum.
37. infrared sensors according to claim 34, it is characterised in that the material of described function auxiliary layer is mixed with miscellaneous
The silicon of matter, silicon dioxide, silicon oxynitride, silicon nitride or carborundum；Or, the material of described function auxiliary layer is doping
The silicon dioxide of non-stoichiometric, silicon oxynitride, silicon nitride, carborundum, silicon-rich silicon nitride or Silicon-rich carborundum, described impurity
Including boron, phosphorus, carbon or fluorine.
The manufacture method of 38. 1 kinds of infrared sensors, it is characterised in that including:
Micro-bridge structure unit arranges the first release guard layer of detecting structure unit；
Arranging diode on the first release guard layer, described diode includes electrode layer and semiconductor layer, described electrode layer
Including positive pole, the negative pole of different layers, described semiconductor layer is folded between described positive pole and described negative pole, described semiconductor layer pair
The positive pole semiconductor layer of positive pole in electrode layer described in Ying Yu, corresponding to the negative pole semiconductor layer of negative pole in described electrode layer；
Second release guard layer is set on described diode.
39. according to the method described in claim 38, it is characterised in that arrange diode bag on the first release guard layer
Include:
On described first release guard layer, the first negative pole in the first electrode layer is set；
Its first negative pole semiconductor layer corresponding in the first semiconductor layer is set on the first negative pole in the first electrode layer；
The first negative pole semiconductor layer according to described first negative pole corresponding in described first semiconductor layer arranges the first semiconductor layer
In the first positive pole semiconductor layer；
Described in the first semiconductor layer, the first positive pole semiconductor layer arranges the first positive pole in the first electrode layer.
40. according to the infrared sensor described in claim 39, it is characterised in that according to institute corresponding in described first semiconductor layer
The first positive pole semiconductor layer that the first negative pole semiconductor layer stating the first negative pole arranges in the first semiconductor layer includes: with mutually it
Between embedded mode the first positive pole semiconductor layer in described first semiconductor layer and described first negative pole semiconductor layer are set.
41. according to the method described in claim 39, it is characterised in that according in described first semiconductor layer corresponding described first
First negative pole semiconductor layer of negative pole also includes after arranging the first positive pole semiconductor layer in the first semiconductor layer:
The first positive pole semiconductor layer in the first semiconductor layer arranges the second negative pole quasiconductor in the second semiconductor layer
Layer, the second negative pole that described second negative pole semiconductor layer is embedded with in the second electrode lay；
The second positive pole quasiconductor in second semiconductor layer is set according to the second negative pole semiconductor layer described in the second semiconductor layer
Layer, and the second positive pole in the second electrode lay is set in described second positive pole semiconductor layer.
42. methods according to claim 41, it is characterised in that partly lead according to the second negative pole described in the second semiconductor layer
Body layer, the second positive pole semiconductor layer arranged in the second semiconductor layer includes: arrange the second half in the way of the most embedded
Described second negative pole semiconductor layer in conductor layer and the second positive pole semiconductor layer in the second semiconductor layer.
43. methods according to claim 41, it is characterised in that the first positive pole semiconductor layer in the first semiconductor layer
On the second negative pole semiconductor layer of arranging in the second semiconductor layer include: in the way of the most embedded, arrange the first half lead
The first positive pole semiconductor layer in body layer and the second negative pole semiconductor layer in the second semiconductor layer.
44. according to the method described in claim 39, it is characterised in that arrange on the first negative pole in the first electrode layer its
Include before the first negative pole semiconductor layer corresponding in first semiconductor layer:
Second positive pole of the second electrode lay is set on described first release guard layer；
Second positive pole semiconductor layer of corresponding described second positive pole in second semiconductor layer is set on described second positive pole；
The second positive pole semiconductor layer according to described second positive pole corresponding in described second semiconductor layer arranges the second semiconductor layer
First negative pole auxiliary semiconductor layer of described first negative pole of middle correspondence.
45. methods according to claim 44, it is characterised in that corresponding described second positive pole in described second semiconductor layer
The first negative pole auxiliary of the second positive pole semiconductor layer and corresponding described first negative pole semiconductor layer is the most embedded connects.
46. according to the method described in claim 39, it is characterised in that the first positive pole quasiconductor described in the first semiconductor layer
Also include after the first positive pole in first electrode layer is set on Ceng:
First positive pole auxiliary quasiconductor of corresponding described first positive pole in the second semiconductor layer is set on described first positive pole
Layer；
The first positive pole auxiliary semiconductor layer according to described first positive pole corresponding in the second semiconductor layer arranges the second semiconductor layer
In the second negative pole semiconductor layer；
Described in the second semiconductor layer, the second negative pole semiconductor layer arranges the second negative pole.
47. methods according to claim 46, it is characterised in that corresponding described first positive pole in described second semiconductor layer
First positive pole auxiliary semiconductor layer described second negative pole corresponding with described second semiconductor layer the second negative pole semiconductor layer
The most embedded connect.
48. manufacture methods according to claim 41, it is characterised in that also include:
Make described first positive pole, the first negative pole respectively with corresponding second just by the groove of conductive through hole or deposition metal
Pole, the second negative electricity connect.
49. according to the method described in claim 38, it is characterised in that described micro-bridge structure unit includes: be electrically connected in
Positive pole in described electrode layer, the support column of negative pole.
50. methods according to claim 49, it is characterised in that also include:
Described second release guard layer is laid output pin and connects wire；
It is electrically connected with corresponding described support column respectively by positive pole, negative pole described in corresponding described output pin and connection wire
Connect.
51. according to the method described in claim 38, it is characterised in that also include: arrange below described detecting structure unit
Metallic reflector.
52. according to the method described in claim 38, it is characterised in that also include: at described first release guard layer and second
Function auxiliary layer is set between release guard layer.
53. methods according to claim 52, it is characterised in that described function auxiliary layer includes supporting layer, stress equilibrium
Layer or infrared absorption layer.
54. according to the method described in claim 38 to 53 any one, it is characterised in that also include: remove described electrode layer
Oxide on middle positive pole and/or negative pole.
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| CN1828948A (en) * | 2005-01-14 | 2006-09-06 | 三菱电机株式会社 | Infrared solid-state image pickup apparatus and a production method thereof |
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