CN102881759B - Fluorinated graphene is preparing the application in photoelectric detector - Google Patents

Fluorinated graphene is preparing the application in photoelectric detector Download PDF

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Publication number
CN102881759B
CN102881759B CN201210409506.9A CN201210409506A CN102881759B CN 102881759 B CN102881759 B CN 102881759B CN 201210409506 A CN201210409506 A CN 201210409506A CN 102881759 B CN102881759 B CN 102881759B
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fluorinated graphene
photoelectric detector
graphene film
graphene
fluorinated
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CN102881759A (en
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王兰喜
陈学康
郭磊
曹生珠
吴敢
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510 Research Institute of 5th Academy of CASC
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510 Research Institute of 5th Academy of CASC
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a kind of novelty teabag of fluorinated graphene, namely utilize fluorinated graphene making the application in photoelectric detector and flexible optoelectronic sensitive detection parts as Electrophotosensitivmaterial material.Does is the detectable wavelength of this device less than 415? the light of nm.The present invention utilizes fluorinated graphene to make photoelectric detector as Electrophotosensitivmaterial material first, adopts flexible substrate can realize flexible photoelectric detector, compares organic semiconductor flexible optoelectronic sensitive detection parts, have the advantage of excellent high frequency performance and low-power consumption.And the resistance of fluorinated graphene can reach 1? more than T Ω, the photodetector utilizing fluorinated graphene to make has low-down dark current noise.Large-area graphene film (catercorner length can reach 30 inches) can be prepared by chemical gaseous phase depositing process, this is that other inorganic broadband semiconductor film is inaccessiable at present, therefore can make the ultra-large photoelectronic detecting array based on fluorinated graphene.

Description

Fluorinated graphene is preparing the application in photoelectric detector
Technical field
The present invention relates to a kind of novelty teabag of fluorinated graphene, specifically refer to that fluorinated graphene is preparing the application in photoelectric detector as Electrophotosensitivmaterial material.
Background technology
Graphene is a kind of desirable two dimensional crystal material of the monolayer carbon atomic building arranged by hexagonal, and itself belongs to zero gap semiconductor, and macro manifestations is metallic state.Importantly, the band structure of Graphene can be changed by the method for surface fluorination, makes the Bandgap extension of fluorinated graphene to 3.0eV, becomes wide band gap semiconducter, and can realize the detection to photon thus.
Fluorinated graphene can easily be transferred on various substrates, particularly the Young's modulus of fluorinated graphene and lasting strain can respectively up to 100N/m and 15%, if transferred in flexible substrate, can realize having flexible, shock resistance and the flexible optoelectronic sensitive detection parts of the feature such as quality is light.
Summary of the invention
The invention provides a kind of novelty teabag of fluorinated graphene, this purposes is that fluorinated graphene can be applied preparing in photoelectric detector as Electrophotosensitivmaterial material, and this device can detect the light that wavelength is less than 415nm; And this element manufacturing can be realized flexible optoelectronic sensitive detection parts on flexible substrates.
The preparation method of described photoelectric detector is:
(1) prepare the graphene film sample in dielectric substrate;
(2) graphene film described in is (1) fluoridized;
(3) fluorinated graphene film surface makes interdigital electrode described in (2), forms the photoelectric detector based on fluorinated graphene.Or:
deposited graphene film with substrate is fluoridized;
described in inciting somebody to action (1), fluorinated graphene is transferred in dielectric substrate;
fluorinated graphene film surface makes interdigital electrode described in (2), forms the photoelectric detector based on fluorinated graphene.
Principle of the present invention is that Graphene fluoridizes rear energy gap broadening to 3.0eV, the Intrinsic Gettering wavelength of corresponding 415nm; Make interdigital electrode on fluorinated graphene surface, the fluorinated graphene in interdigital region is called photosurface, because Intrinsic Gettering can produce a large amount of photo-generated carriers when photosurface is penetrated by the illumination that wavelength is less than 415nm; Photo-generated carrier is collected by interdigital electrode under bias respectively, forms photoelectric current at external circuit, realizes the detection to light by the photoelectric current measuring external circuit.
Beneficial effect of the present invention comprises:
the present invention utilizes fluorinated graphene to make photoelectric detector as Electrophotosensitivmaterial material first, adopts flexible substrate can realize flexible photoelectric detector, compares organic semiconductor flexible optoelectronic sensitive detection parts, have the advantage of excellent high frequency performance and low-power consumption.And the resistance of fluorinated graphene can reach more than 1T Ω, the photodetector utilizing fluorinated graphene to make has low-down dark current noise.
large-area graphene film (catercorner length can reach 30 inches) can be prepared by chemical gaseous phase depositing process, this is that other inorganic broadband semiconductor film is inaccessiable at present, therefore can make the ultra-large photoelectronic detecting array based on fluorinated graphene.
Accompanying drawing explanation
Fig. 1 is the structural representation of photoelectric detector of the present invention.
Embodiment
Embodiment 1, with reference to Fig. 1, the concrete steps prepared based on fluorinated graphene photoelectric detector are:
prepare graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
will described in graphene film surface uniform apply one deck polymethyl methacrylate (PMMA) film, then described substrate corrosion is removed, the remaining graphene film supported by PMMA; Secondly, the graphene film that PMMA supports is transferred to SiO 2on substrate 1, then PMMA is removed, and to SiO 2graphene film on substrate 1 cleans;
(2) graphene film surface described in is fluoridized: will with SiO 2the graphene film of substrate puts into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
utilize on photoetching technique fluorinated graphene film 2 described in (3) and make interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.
Embodiment 2, with reference to Fig. 1, the concrete steps prepared based on fluorinated graphene photoelectric detector are:
prepare graphene film: first utilize mechanical stripping method or oxidation-reduction method or ultrasonic dispersion to prepare graphene film, and graphene film is directly transferred to SiO 2on substrate 1;
(1) graphene film surface described in is fluoridized: will with SiO 2the graphene film of substrate puts into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
(3) utilize photoetching technique to exist described in fluorinated graphene film 2 makes interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.
Embodiment 3, with reference to Fig. 1, the concrete steps prepared based on fluorinated graphene photoelectric detector are:
prepare graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
right described in graphene film surface fluoridize: the graphene film with substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
will described in fluorinated graphene film 2 surface uniform apply one deck polymethyl methacrylate (PMMA) film, then described substrate corrosion is removed, the remaining fluorinated graphene film 2 supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA supports is transferred to SiO 2on substrate 1, then PMMA is removed, and to SiO 2fluorinated graphene film 2 on substrate 1 cleans;
photoetching technique is utilized to exist described in fluorinated graphene film 2 makes interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.
Embodiment 4, with reference to Fig. 1, the concrete steps prepared based on the flexible optoelectronic sensitive detection parts of fluorinated graphene are:
prepare graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
right described in graphene film surface fluoridize: the graphene film with substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
will described in fluorinated graphene film 2 surface uniform apply one deck polymethyl methacrylate (PMMA) film, then described substrate corrosion is removed, the remaining fluorinated graphene film 2 supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA supports is transferred in dimethyl silicone polymer flexible substrate 1, then PMMA is removed, and the fluorinated graphene film 2 in dimethyl silicone polymer flexible substrate 1 is cleaned;
photoetching technique is utilized to exist described in fluorinated graphene film 2 makes interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.
Embodiment 5, with reference to Fig. 1, the concrete steps prepared based on the flexible optoelectronic sensitive detection parts of fluorinated graphene are:
prepare graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
right described in graphene film surface fluoridize: the graphene film with substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
will described in fluorinated graphene film 2 surface uniform apply one deck polymethyl methacrylate (PMMA) film, then described substrate corrosion is removed, the remaining fluorinated graphene film 2 supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA supports is transferred on polyimide flex substrate 1, then PMMA is removed, and the fluorinated graphene film 2 on polyimide flex substrate 1 is cleaned;
photoetching technique is utilized to exist described in fluorinated graphene film 2 makes interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.
Embodiment 6, with reference to Fig. 1, the concrete steps prepared based on the flexible optoelectronic sensitive detection parts of fluorinated graphene are:
prepare graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
right described in graphene film surface fluoridize: the graphene film with substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) graphene film surface is fluoridized at 70 DEG C of temperature, or be filled with fluorine gas (F 2) graphene film surface is fluoridized at 350 DEG C of temperature, form fluorinated graphene film 2;
will described in fluorinated graphene film 2 surface uniform apply one deck polymethyl methacrylate (PMMA) film, then described substrate corrosion is removed, the remaining fluorinated graphene film 2 supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA supports is transferred in PEN flexible substrate 1, then PMMA is removed, and the fluorinated graphene film 2 in PEN flexible substrate 1 is cleaned;
photoetching technique is utilized to exist described in fluorinated graphene film 2 makes interdigital electrode 3, finally form the photoelectric detector based on fluorinated graphene.

Claims (5)

1. utilize fluorinated graphene to prepare a method for ultra-large photoelectronic detecting array, it is characterized in that: its array diagonal is of a size of 30 inches; Concrete preparation method is: utilize the method for chemical vapour deposition (CVD) to prepare on an insulating substrate large-area fluorinated graphene that catercorner length reaches 30 inches, makes interdigital electrode, form the photoelectric detector based on fluorinated graphene on fluorinated graphene surface.
2. a kind of method utilizing fluorinated graphene to prepare ultra-large photoelectronic detecting array as claimed in claim 1, is characterized in that: the preparation method of described photoelectric detector is:
(1) prepare the graphene film sample in dielectric substrate;
(2) graphene film described in is (1) fluoridized;
(3) fluorinated graphene film surface makes interdigital electrode described in (2), forms the photoelectric detector based on fluorinated graphene.
3. a kind of method utilizing fluorinated graphene to prepare ultra-large photoelectronic detecting array as claimed in claim 1, is characterized in that: the preparation method of described photoelectric detector is:
deposited graphene film with substrate is fluoridized;
described in inciting somebody to action (1), fluorinated graphene is transferred in dielectric substrate;
fluorinated graphene film surface makes interdigital electrode described in (2), forms the photoelectric detector based on fluorinated graphene.
4. utilize fluorinated graphene to prepare a method for flexible ultra-large photoelectronic detecting array, it is characterized in that: its array diagonal is of a size of 30 inches; Concrete preparation method is: utilize the method for chemical vapour deposition (CVD) to prepare on flexible insulating substrate large-area fluorinated graphene that catercorner length reaches 30 inches, make interdigital electrode on fluorinated graphene surface, form the flexible optoelectronic sensitive detection parts based on fluorinated graphene.
5. a kind of method utilizing fluorinated graphene to prepare flexible ultra-large photoelectronic detecting array as claimed in claim 4, is characterized in that: the preparation method of described photoelectric detector is:
deposited graphene film with substrate is fluoridized;
described in inciting somebody to action (1), fluorinated graphene is transferred on flexible insulating substrate;
fluorinated graphene film surface makes interdigital electrode described in (2), forms the photoelectric detector based on fluorinated graphene.
CN201210409506.9A 2012-10-24 2012-10-24 Fluorinated graphene is preparing the application in photoelectric detector Expired - Fee Related CN102881759B (en)

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Publication number Priority date Publication date Assignee Title
CN104300028B (en) * 2014-08-08 2017-02-15 浙江大学 Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method
CN104300027B (en) * 2014-08-08 2016-11-09 浙江大学 Avalanche photodetector based on graphene/silicon dioxide/silicon and preparation method
CN105810830B (en) * 2016-05-24 2018-10-30 中国科学院重庆绿色智能技术研究院 A kind of flexible optoelectronic sensor and preparation method thereof based on three-dimensional conformal graphene
CN108878575B (en) * 2018-06-29 2020-03-20 合肥工业大学 Double-working-mode broadband photoelectric detector based on silicon/fluorinated graphene and preparation method thereof

Citations (2)

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CN101798706A (en) * 2009-02-10 2010-08-11 中国科学院物理研究所 Method for extending and growing graphene on SiC substrate
CN102431999A (en) * 2011-09-22 2012-05-02 中国科学院金属研究所 Method for preparing high-quality graphene

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CN101798706A (en) * 2009-02-10 2010-08-11 中国科学院物理研究所 Method for extending and growing graphene on SiC substrate
CN102431999A (en) * 2011-09-22 2012-05-02 中国科学院金属研究所 Method for preparing high-quality graphene

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uorination.《Carbon》.2012,第50卷(第15期),Pages 5403-5410. *
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