CN102881759A - Application of fluoridized graphene in manufacture of photoelectric detection devices - Google Patents

Application of fluoridized graphene in manufacture of photoelectric detection devices Download PDF

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CN102881759A
CN102881759A CN2012104095069A CN201210409506A CN102881759A CN 102881759 A CN102881759 A CN 102881759A CN 2012104095069 A CN2012104095069 A CN 2012104095069A CN 201210409506 A CN201210409506 A CN 201210409506A CN 102881759 A CN102881759 A CN 102881759A
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graphene
fluoridized
graphene film
photoelectric detection
fluorinated graphene
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CN102881759B (en
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王兰喜
陈学康
郭磊
曹生珠
吴敢
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510 Research Institute of 5th Academy of CASC
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Abstract

The invention provides a novel application of fluoridized graphene, namely application in manufacture of photoelectric detection devices and flexible photoelectric detection devices by utilizing the fluoridized graphene as photoelectric sensitive materials. The devices can detect light with wavelength smaller than 415nm. In the application, the fluoridized graphene is firstly used as the photoelectric sensitive material for manufacturing the photoelectric detection devices, and the flexible photoelectric detection devices can be manufactured by the aid of flexible substrates and have the advantages of excellent high-frequency performance and low power consumption as compared with organic semiconductor flexible photoelectric detection devices. Further, resistance of the fluoridized graphene can reach 1T omega, and photoelectric detectors manufactured by the fluoridized graphene have ultralow dark-current noise. Large-area graphene film (the length of a diagonal line can reach 30 inches) can be manufactured by a chemical gas phase deposition method, while existing other inorganic broadband semiconductor film is failed in large-area manufacture, and thereby superlarge-scale photoelectric detection arrays based on the fluoridized graphene can be manufactured.

Description

The application of fluorinated graphene in the preparation photoelectric detector
Technical field
The present invention relates to a kind of new purposes of fluorinated graphene, refer to that specifically fluorinated graphene is as the application of Electrophotosensitivmaterial material in the preparation photoelectric detector.
Background technology
Graphene is a kind of desirable two dimensional crystal material of the monolayer carbon atomic building of being arranged by hexagonal, and itself belongs to zero gap semiconductor, and macro manifestations is metallic state.Importantly, the method that the band structure of Graphene can be by surface fluorination and change make Bandgap extension to 3.0 eV of fluorinated graphene, become wide band gap semiconducter, and can realize the detection to photon thus.
Fluorinated graphene can easily be transferred on the different substrates, particularly the Young's modulus of fluorinated graphene and lasting strain can be respectively up to 100 N/m and 15 %, if it is transferred on the flexible substrate then can realize having the flexible optoelectronic sensitive detection parts of the characteristics such as flexible, shock resistance and quality be light.
Summary of the invention
The invention provides a kind of new purposes of fluorinated graphene, this purposes is that fluorinated graphene can be used as Electrophotosensitivmaterial material and uses in the photoelectric detector in preparation, and this device can be surveyed less than the light of 415 nm wavelength; And this element manufacturing can be realized the flexible optoelectronic sensitive detection parts on flexible substrate.
The preparation method of described photoelectric detector is:
⑴ prepare the graphene film sample on the dielectric substrate;
⑵ fluoridize graphene film described in the ⑴;
⑶ make interdigital electrode at the film surface of fluorinated graphene described in the ⑵, forms the photoelectric detector based on fluorinated graphene.Or:
To fluoridize with the deposited graphene film of substrate;
Figure 867795DEST_PATH_IMAGE002
⑴ fluorinated graphene described in is transferred on the dielectric substrate;
Figure 659033DEST_PATH_IMAGE003
Make interdigital electrode at the film surface of fluorinated graphene described in the ⑵, form the photoelectric detector based on fluorinated graphene.
Principle of the present invention is that Graphene is fluoridized rear energy gap broadening to 3.0 eV, the Intrinsic Gettering wavelength of corresponding 415 nm; Make interdigital electrode on fluorinated graphene surface, the fluorinated graphene in interdigital zone is called photosurface, photosurface by wavelength during less than the irradiation of 415 nm because Intrinsic Gettering can produce a large amount of photo-generated carriers; Photo-generated carrier is collected by interdigital electrode respectively under bias effect, forms photoelectric current at external circuit, realizes detection to light by the photoelectric current of measuring external circuit.
Beneficial effect of the present invention comprises:
The present invention utilizes fluorinated graphene to make photoelectric detector as Electrophotosensitivmaterial material first, adopts flexible substrate can realize flexible photoelectric detector, compares organic semiconductor flexible optoelectronic sensitive detection parts, has the advantage of excellent high frequency performance and low-power consumption.And the resistance of fluorinated graphene can reach more than the 1 T Ω, and the photodetector that utilizes fluorinated graphene to make has low-down dark current noise.
Figure 235825DEST_PATH_IMAGE002
Can prepare large-area graphene film (catercorner length can reach 30 inches) by chemical gaseous phase depositing process, this is that other inorganic broadband semiconductor film is inaccessiable at present, therefore can make the ultra-large photoelectronic detecting array based on fluorinated graphene.
Description of drawings
Fig. 1 is the structural representation of photoelectric detector of the present invention.
Embodiment
Embodiment 1, and with reference to Fig. 1, preparation based on the concrete steps of fluorinated graphene photoelectric detector is:
Figure 741893DEST_PATH_IMAGE001
Preparation graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
Figure 20427DEST_PATH_IMAGE002
Will
Figure 902933DEST_PATH_IMAGE001
Described in the graphene film surface uniform apply one deck polymethyl methacrylate (PMMA) film, then with described substrate erosion removal, the remaining graphene film that is supported by PMMA; Secondly, the graphene film that PMMA is supported is transferred to SiO 2On the substrate 1, then PMMA is removed, and to SiO 2Graphene film on the substrate 1 cleans;
Figure 255417DEST_PATH_IMAGE003
⑵ the surface of graphene film described in is fluoridized: will be with SiO 2The graphene film of substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
Figure 197965DEST_PATH_IMAGE004
Utilize photoetching technique to make interdigital electrode 3 at the film of fluorinated graphene described in the ⑶ 2, form at last the photoelectric detector based on fluorinated graphene.
Embodiment 2, and with reference to Fig. 1, preparation based on the concrete steps of fluorinated graphene photoelectric detector is:
Preparation graphene film: at first utilize mechanical stripping method or oxidation-reduction method or ultrasonic dispersion to prepare graphene film, and graphene film directly is transferred to SiO 2On the substrate 1;
⑴ the surface of graphene film described in is fluoridized: will be with SiO 2The graphene film of substrate is put into vacuum chamber, is filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
⑶ utilize photoetching technique to exist
Figure 92868DEST_PATH_IMAGE002
Described in make interdigital electrode 3 on the fluorinated graphene film 2, form at last the photoelectric detector based on fluorinated graphene.
Embodiment 3, and with reference to Fig. 1, preparation based on the concrete steps of fluorinated graphene photoelectric detector is:
Figure 940738DEST_PATH_IMAGE001
Preparation graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
Figure 928286DEST_PATH_IMAGE002
Right
Figure 152594DEST_PATH_IMAGE001
Described in the graphene film surface fluoridize: will put into vacuum chamber with the graphene film of substrate, be filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
Figure 479670DEST_PATH_IMAGE003
Will
Figure 764021DEST_PATH_IMAGE002
Described in fluorinated graphene film 2 surface uniforms apply one deck polymethyl methacrylate (PMMA) film, then with described substrate erosion removal, the remaining fluorinated graphene film 2 that is supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA is supported is transferred to SiO 2On the substrate 1, then PMMA is removed, and to SiO 2Fluorinated graphene film 2 on the substrate 1 cleans;
Figure 176547DEST_PATH_IMAGE004
Utilize photoetching technique to exist Described in make interdigital electrode 3 on the fluorinated graphene film 2, form at last the photoelectric detector based on fluorinated graphene.
Embodiment 4, and with reference to Fig. 1, preparation based on the concrete steps of the flexible optoelectronic sensitive detection parts of fluorinated graphene is:
Figure 182867DEST_PATH_IMAGE001
Preparation graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
Figure 638119DEST_PATH_IMAGE002
Right
Figure 537942DEST_PATH_IMAGE001
Described in the graphene film surface fluoridize: will put into vacuum chamber with the graphene film of substrate, be filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
Figure 166369DEST_PATH_IMAGE003
Will
Figure 202458DEST_PATH_IMAGE002
Described in fluorinated graphene film 2 surface uniforms apply one deck polymethyl methacrylate (PMMA) film, then with described substrate erosion removal, the remaining fluorinated graphene film 2 that is supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA is supported is transferred on the dimethyl silicone polymer flexible substrate 1, then PMMA is removed, and the fluorinated graphene film 2 on the dimethyl silicone polymer flexible substrate 1 is cleaned;
Figure 828611DEST_PATH_IMAGE004
Utilize photoetching technique to exist
Figure 779512DEST_PATH_IMAGE003
Described in make interdigital electrode 3 on the fluorinated graphene film 2, form at last the photoelectric detector based on fluorinated graphene.
Embodiment 5, and with reference to Fig. 1, preparation based on the concrete steps of the flexible optoelectronic sensitive detection parts of fluorinated graphene is:
Figure 883734DEST_PATH_IMAGE001
Preparation graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
Right
Figure 836964DEST_PATH_IMAGE001
Described in the graphene film surface fluoridize: will put into vacuum chamber with the graphene film of substrate, be filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
Will
Figure 681609DEST_PATH_IMAGE002
Described in fluorinated graphene film 2 surface uniforms apply one deck polymethyl methacrylate (PMMA) film, then with described substrate erosion removal, the remaining fluorinated graphene film 2 that is supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA is supported is transferred on the polyimides flexible substrate 1, then PMMA is removed, and the fluorinated graphene film 2 on the polyimides flexible substrate 1 is cleaned;
Figure 692290DEST_PATH_IMAGE004
Utilize photoetching technique to exist
Figure 660246DEST_PATH_IMAGE003
Described in make interdigital electrode 3 on the fluorinated graphene film 2, form at last the photoelectric detector based on fluorinated graphene.
Embodiment 6, and with reference to Fig. 1, preparation based on the concrete steps of the flexible optoelectronic sensitive detection parts of fluorinated graphene is:
Preparation graphene film: utilize chemical gaseous phase depositing process to prepare graphene film in substrate;
Figure 264720DEST_PATH_IMAGE002
Right
Figure 395487DEST_PATH_IMAGE001
Described in the graphene film surface fluoridize: will put into vacuum chamber with the graphene film of substrate, be filled with xenon fluoride (XeF 2) the graphene film surface is fluoridized under 70 ℃ of temperature, or be filled with fluorine gas (F 2) the graphene film surface is fluoridized under 350 ℃ of temperature, form fluorinated graphene film 2;
Figure 534345DEST_PATH_IMAGE003
Will
Figure 117773DEST_PATH_IMAGE002
Described in fluorinated graphene film 2 surface uniforms apply one deck polymethyl methacrylate (PMMA) film, then with described substrate erosion removal, the remaining fluorinated graphene film 2 that is supported by PMMA; Secondly, the fluorinated graphene film 2 that PMMA is supported is transferred on the PEN flexible substrate 1, then PMMA is removed, and the fluorinated graphene film 2 on the PEN flexible substrate 1 is cleaned;
Utilize photoetching technique to exist Described in make interdigital electrode 3 on the fluorinated graphene film 2, form at last the photoelectric detector based on fluorinated graphene.

Claims (4)

1. the application of fluorinated graphene in the preparation photoelectric detector.
2. the application of fluorinated graphene as claimed in claim 1 in preparation flexible optoelectronic sensitive detection parts.
3. application as claimed in claim 1 or 2 is characterized in that: the preparation method of described photoelectric detector is:
⑴ prepare the graphene film sample on the dielectric substrate;
⑵ fluoridize graphene film described in the ⑴;
⑶ make interdigital electrode at the film surface of fluorinated graphene described in the ⑵, forms the photoelectric detector based on fluorinated graphene.
4. application as claimed in claim 1 or 2 is characterized in that: the preparation method of described photoelectric detector is:
Figure 873357DEST_PATH_IMAGE001
To fluoridize with the deposited graphene film of substrate;
Figure 2012104095069100001DEST_PATH_IMAGE002
⑴ fluorinated graphene described in is transferred on the dielectric substrate;
Figure 476377DEST_PATH_IMAGE003
Make interdigital electrode at the film surface of fluorinated graphene described in the ⑵, form the photoelectric detector based on fluorinated graphene.
CN201210409506.9A 2012-10-24 2012-10-24 Fluorinated graphene is preparing the application in photoelectric detector Expired - Fee Related CN102881759B (en)

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Cited By (6)

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CN104300029A (en) * 2014-08-08 2015-01-21 浙江大学 Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method
CN104300027A (en) * 2014-08-08 2015-01-21 浙江大学 Graphene/silicon dioxide/ silicon based avalanche photodetector and preparation method thereof
CN104300028A (en) * 2014-08-08 2015-01-21 浙江大学 Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method
CN105810830A (en) * 2016-05-24 2016-07-27 中国科学院重庆绿色智能技术研究院 Flexible photoelectric sensor based on three-dimensional conformal graphene and manufacturing method thereof
CN104300029B (en) * 2014-08-08 2016-11-30 浙江大学 Silica-based avalanche photodetector with fluorinated graphene as insulating barrier and preparation method
CN108878575A (en) * 2018-06-29 2018-11-23 合肥工业大学 It is a kind of based on silicon/fluorinated graphene double working modes broadband photodetector and preparation method thereof

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104300029A (en) * 2014-08-08 2015-01-21 浙江大学 Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method
CN104300027A (en) * 2014-08-08 2015-01-21 浙江大学 Graphene/silicon dioxide/ silicon based avalanche photodetector and preparation method thereof
CN104300028A (en) * 2014-08-08 2015-01-21 浙江大学 Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method
CN104300027B (en) * 2014-08-08 2016-11-09 浙江大学 Avalanche photodetector based on graphene/silicon dioxide/silicon and preparation method
CN104300029B (en) * 2014-08-08 2016-11-30 浙江大学 Silica-based avalanche photodetector with fluorinated graphene as insulating barrier and preparation method
CN104300028B (en) * 2014-08-08 2017-02-15 浙江大学 Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method
CN105810830A (en) * 2016-05-24 2016-07-27 中国科学院重庆绿色智能技术研究院 Flexible photoelectric sensor based on three-dimensional conformal graphene and manufacturing method thereof
CN105810830B (en) * 2016-05-24 2018-10-30 中国科学院重庆绿色智能技术研究院 A kind of flexible optoelectronic sensor and preparation method thereof based on three-dimensional conformal graphene
CN108878575A (en) * 2018-06-29 2018-11-23 合肥工业大学 It is a kind of based on silicon/fluorinated graphene double working modes broadband photodetector and preparation method thereof
CN108878575B (en) * 2018-06-29 2020-03-20 合肥工业大学 Double-working-mode broadband photoelectric detector based on silicon/fluorinated graphene and preparation method thereof

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