CN102881754A - Back point contact cell with bubbling-free aluminum oxide and preparation method thereof - Google Patents
Back point contact cell with bubbling-free aluminum oxide and preparation method thereof Download PDFInfo
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- CN102881754A CN102881754A CN2012103690777A CN201210369077A CN102881754A CN 102881754 A CN102881754 A CN 102881754A CN 2012103690777 A CN2012103690777 A CN 2012103690777A CN 201210369077 A CN201210369077 A CN 201210369077A CN 102881754 A CN102881754 A CN 102881754A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a back point contact cell with bubbling-free aluminum oxide. The back point contact cell comprises an aluminum oxide layer and a protective film. A buffer layer is arranged between the aluminum oxide layer and the protective film. By the aid of arrangement of the buffer layer, stress of aluminum oxide during sintering is relieved, the bubbling problem of the aluminum oxide is solved, attenuation of solar cell performance is limited. The invention further discloses a preparation method of the cell, the bubbling problem of the aluminum oxide can be solved by only growing a silicon oxide buffer film on the surface of an aluminum oxide passivating film, and the preparation method is high in operability.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, be specifically related to not back side point contact battery and preparation method thereof of bubbling of a kind of aluminium oxide.
Background technology
Modernization solar cell suitability for industrialized production is towards the high efficiency, low cost future development, and back side point contact (PERC) battery it is advantageous that as the representative of high efficiency, low cost developing direction:
(1) excellent back reflector: because the existence of cell backside deielectric-coating is so that interior back reflection is increased to 92-95% from the full aluminium back surface field 65% of routine.The long wave Optical Absorption that increases on the one hand especially provides technical assurance to the trend of following Thin film cell on the other hand;
(2) superior passivating back technology: because the good passivation of back side deielectric-coating, can with back side recombination rate from the full aluminium back of the body ~ 1000cm/s is reduced to 100-200cm/s;
Because back side point contact battery majority adopts the p-type substrates, back side deielectric-coating passivation is take aluminium oxide as main at present.Because aluminium paste has attack function to aluminium oxide, the aluminum oxide film surface needs to cover one deck protective film and is used for stopping that aluminium paste is to the erosion of film again.And the contact need sintering of film perforate part aluminium paste and silicon forms; in the sintering process in the aluminium oxide stress of the release of hydrogen and film self under the compacting of diaphragm and aluminium paste, be not enough to timely release; can cause aluminium oxide bubbling to occur, thereby cause the decay of battery performance.
Summary of the invention
Goal of the invention: be the deficiency that exists for prior art, provide a kind of aluminium oxide not the back side point of bubbling contact battery and preparation method thereof.
Technical scheme: for achieving the above object, the invention provides the not back side point contact battery of bubbling of a kind of aluminium oxide, comprising: alumina layer and diaphragm; Be provided with one deck resilient coating between described alumina layer and the diaphragm.The present invention has been alleviated the stress in the aluminium oxide in the sintering process by one deck resilient coating is set, and eliminates the bubbling problem of aluminium oxide, has limited the decay of solar cell properties.
Resilient coating is preferably silica described in the present invention, that is: silicon oxide film.Diaphragm described in the present invention is SiNx, or SiCx or TiOx.
The invention also discloses the not preparation method of the back side point contact battery of bubbling of a kind of aluminium oxide, concrete steps are as follows:
(1) P type silicon chip goes damage and making herbs into wool, cleans;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq;
(3) wet method in line equipment is removed the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) at the back of the body superficial growth aluminium oxide passivation film of silicon chip, thickness 9nm-11 nm;
(5) at aluminium oxide passivation film superficial growth silica buffer film;
(6) at silica buffer film superficial growth silicon nitride diaphragm;
(7) at the front surface grown silicon nitride antireflective film of silicon chip;
(8) back side membrane laser perforate;
(9) at back of the body surface printing back electrode and the aluminium paste of silicon chip;
(10) front surface at silicon chip prints grid line;
(11) sintering, test.
The growing method of silica buffer film is in the described step (5): PECVD, or chemical solution oxidation, or ald, or APCVD.
Beneficial effect: the present invention compared with prior art has the following advantages:
Solar cell of the present invention can be eliminated the bubbling phenomenon of back side deielectric-coating, thereby has limited the decay of battery performance, the useful life of having improved solar cell.
Method of the present invention only needs the superficial growth silica buffer film at the aluminium oxide passivation film, can eliminate the bubbling problem of aluminium oxide, and is workable.
Description of drawings
Fig. 1 is the not schematic diagram of the back side point contact battery of bubbling of aluminium oxide described in the embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, present embodiment is implemented under take technical solution of the present invention as prerequisite, should understand these embodiment and only be used for explanation the present invention and be not used in and limit the scope of the invention.
Embodiment
A kind of aluminium oxide as shown in Figure 1 is the back side point contact battery of bubbling not, is provided with successively from top to down: front surface A g electrode 1, SiNx antireflective passive film 2, phosphorus-diffused layer 3, P type silicon substrate 4, aluminum oxide film 5, resilient coating 6, diaphragm 7, back side Al electrode 8; Described resilient coating 6 is silicon oxide film; Described diaphragm 7 is silicon nitride film.
Above-mentioned aluminium oxide is the preparation method of the back side point contact battery of bubbling not, and concrete steps are as follows:
(1) P type silicon substrate goes damage and making herbs into wool, cleans p-type silicon chip, resistivity 0.5-6 ohmcm;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq forms phosphorus-diffused layer;
(3) wet method in line equipment is removed the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) at the back of the body superficial growth aluminium oxide passivation film of silicon chip, thickness 10nm;
(5) the method growing silicon oxide deielectric-coating with PECVD on the aluminum oxide film surface;
(6) the method grown silicon nitride diaphragm with PECVD on the silicon oxide film surface;
(7) at the front surface of the silicon chip method growth SiNx antireflective passive film with PECVD;
(8) back side membrane laser perforate;
(9) front surface at silicon chip prints grid line;
(10) sintering, test.
After finishing the cell piece making, adopt 30% salt acid soak cell piece, draw the aluminium of cell backside, expose film, watch film surface under light microscope or SEM, film surface bubbling can not occur.
Claims (5)
1. the aluminium oxide back side point contact battery of bubbling not comprises: alumina layer and diaphragm; It is characterized in that: be provided with one deck resilient coating between described alumina layer and the diaphragm.
2. a kind of aluminium oxide according to claim 1 back side point contact battery of bubbling not, it is characterized in that: described resilient coating is: silica.
3. a kind of aluminium oxide according to claim 1 back side point contact battery of bubbling not, it is characterized in that: described diaphragm is SiNx, or SiCx or TiOx.
4. the aluminium oxide preparation method of the back side point contact battery of bubbling not, it is characterized in that: concrete steps are as follows:
(1) P type silicon chip goes damage and making herbs into wool, cleans;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq;
(3) wet method in line equipment is removed the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) at the back of the body superficial growth aluminium oxide passivation film of silicon chip, thickness 9nm-11 nm;
(5) at aluminium oxide passivation film superficial growth silica buffer film;
(6) at silica buffer film superficial growth silicon nitride diaphragm;
(7) at the front surface grown silicon nitride antireflective film of silicon chip;
(8) back side membrane laser perforate;
(9) at back of the body surface printing back electrode and the aluminium paste of silicon chip;
(10) front surface at silicon chip prints grid line;
(11) sintering, test.
5. a kind of aluminium oxide according to claim 4 preparation method of the back side point contact battery of bubbling not, it is characterized in that: the growing method of silica buffer film is in the described step (5): PECVD, or the chemical solution oxidation, or ald, or APCVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210369077.7A CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210369077.7A CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
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| CN102881754A true CN102881754A (en) | 2013-01-16 |
| CN102881754B CN102881754B (en) | 2015-04-22 |
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| CN201210369077.7A Expired - Fee Related CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400868A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Novel double-layer-film back-passivated solar cell structure |
| CN105810779A (en) * | 2016-04-08 | 2016-07-27 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of PERC solar cell |
| CN106981522A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric transformation efficiency and preparation method thereof can be improved |
| CN112736144A (en) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | Solar cell and method for producing a layer structure for a solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102487103A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
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- 2012-09-27 CN CN201210369077.7A patent/CN102881754B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487103A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400868A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Novel double-layer-film back-passivated solar cell structure |
| CN105810779A (en) * | 2016-04-08 | 2016-07-27 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of PERC solar cell |
| CN106981522A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric transformation efficiency and preparation method thereof can be improved |
| CN112736144A (en) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | Solar cell and method for producing a layer structure for a solar cell |
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| CN102881754B (en) | 2015-04-22 |
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