CN102879858B - 具有光栅的单纤三向复用器 - Google Patents
具有光栅的单纤三向复用器 Download PDFInfo
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- CN102879858B CN102879858B CN201210419042.XA CN201210419042A CN102879858B CN 102879858 B CN102879858 B CN 102879858B CN 201210419042 A CN201210419042 A CN 201210419042A CN 102879858 B CN102879858 B CN 102879858B
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- 239000000835 fiber Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 17
- 239000002070 nanowire Substances 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 6
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- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
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- 238000005516 engineering process Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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CN201210419042.XA CN102879858B (zh) | 2012-10-26 | 2012-10-26 | 具有光栅的单纤三向复用器 |
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CN201210419042.XA CN102879858B (zh) | 2012-10-26 | 2012-10-26 | 具有光栅的单纤三向复用器 |
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CN102879858A CN102879858A (zh) | 2013-01-16 |
CN102879858B true CN102879858B (zh) | 2015-05-13 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104426604B (zh) * | 2013-09-10 | 2017-02-08 | 中国电信股份有限公司 | 光网络单元与单片集成反射器的单纤三向复用器 |
CN105572796B (zh) * | 2016-03-07 | 2018-08-21 | 龙岩学院 | 一种基于反对称多模布拉格波导光栅的上下路滤波器 |
CN106950659A (zh) * | 2017-05-11 | 2017-07-14 | 青岛海信宽带多媒体技术有限公司 | 光模块 |
EP3629068A4 (en) | 2017-06-16 | 2020-06-03 | Huawei Technologies Co., Ltd. | OPTICAL ADD / DROP MULTIPLEXER |
CN111239895B (zh) * | 2020-02-26 | 2020-11-13 | 北京邮电大学 | 一种波导耦合结构及光发射器*** |
CN117008249B (zh) * | 2023-10-07 | 2024-04-02 | 之江实验室 | 一种铌酸锂波分复用器及光信号复用方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1719754A (zh) * | 2005-07-14 | 2006-01-11 | 四川飞阳科技有限公司 | 一种平面集成单纤三向光信号处理芯片器件 |
CN101464540A (zh) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | 混合集成单纤三向器 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1719754A (zh) * | 2005-07-14 | 2006-01-11 | 四川飞阳科技有限公司 | 一种平面集成单纤三向光信号处理芯片器件 |
CN101464540A (zh) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | 混合集成单纤三向器 |
Non-Patent Citations (1)
Title |
---|
基于Si纳米线AWG的超紧凑单纤三向滤波器设计;安俊明,等;《光电子˙激光》;20100831;第21卷(第8期);1115-1118 * |
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Effective date of registration: 20170615 Address after: 226009 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Bei Lou Park Development Research Co-patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Patentee after: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Address before: 226009 Nantong science and Technology Industrial Park, Su Tong Road, Jiangsu, No. 14, No. 30 Co-patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: JIANGSU SUNFY OPTOELECTRONICS TECHNOLOGY CO.,LTD. Co-patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Nantong Xinwei Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20240524 Address after: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Country or region after: China Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Nantong Xinwei Research Institute Country or region before: China Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |