CN102856452A - 多波长发光二极管及其制备方法 - Google Patents
多波长发光二极管及其制备方法 Download PDFInfo
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- CN102856452A CN102856452A CN2012103269059A CN201210326905A CN102856452A CN 102856452 A CN102856452 A CN 102856452A CN 2012103269059 A CN2012103269059 A CN 2012103269059A CN 201210326905 A CN201210326905 A CN 201210326905A CN 102856452 A CN102856452 A CN 102856452A
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- Prior art keywords
- quantum well
- gallium nitride
- layer
- exposed surface
- well layer
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- 238000004519 manufacturing process Methods 0.000 title abstract 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000001338 self-assembly Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 230000026267 regulation of growth Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 238000009877 rendering Methods 0.000 abstract description 4
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000003086 colorant Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
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CN201210326905.9A CN102856452B (zh) | 2012-09-06 | 2012-09-06 | 多波长发光二极管及其制备方法 |
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CN201210326905.9A CN102856452B (zh) | 2012-09-06 | 2012-09-06 | 多波长发光二极管及其制备方法 |
Publications (2)
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CN102856452A true CN102856452A (zh) | 2013-01-02 |
CN102856452B CN102856452B (zh) | 2015-12-09 |
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CN201210326905.9A Active CN102856452B (zh) | 2012-09-06 | 2012-09-06 | 多波长发光二极管及其制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716238A (zh) * | 2013-12-12 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 双色光电器件及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100699147B1 (ko) * | 2005-12-15 | 2007-03-21 | 엘지전자 주식회사 | 다파장 발광소자 및 그 제조방법 |
CN101645480A (zh) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | 一种提高氮化镓基发光二极管抗静电能力的方法 |
US20120049151A1 (en) * | 2010-08-30 | 2012-03-01 | Invenlux Corporation | Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same |
-
2012
- 2012-09-06 CN CN201210326905.9A patent/CN102856452B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100699147B1 (ko) * | 2005-12-15 | 2007-03-21 | 엘지전자 주식회사 | 다파장 발광소자 및 그 제조방법 |
CN101645480A (zh) * | 2009-06-22 | 2010-02-10 | 武汉华灿光电有限公司 | 一种提高氮化镓基发光二极管抗静电能力的方法 |
US20120049151A1 (en) * | 2010-08-30 | 2012-03-01 | Invenlux Corporation | Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716238A (zh) * | 2013-12-12 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 双色光电器件及其制作方法 |
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CN102856452B (zh) | 2015-12-09 |
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Effective date of registration: 20221124 Address after: No. 398 Ruoshui Road, Dushu Lake Higher Education District, Suzhou City, Jiangsu Province, 215123 Patentee after: SUZHOU NAFANG TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 215125, Jiangsu province Suzhou Industrial Park alone villa lake high Parish, if waterway 398 Patentee before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20230615 Address after: Room 1501, No. 8 Dongwu North Road, Wuzhong District, Suzhou City, Jiangsu Province, 215000 Patentee after: Suzhou Wuzhong Zhongke Yucheng Technology Development Co.,Ltd. Address before: No. 398 Ruoshui Road, Dushu Lake Higher Education District, Suzhou City, Jiangsu Province, 215123 Patentee before: SUZHOU NAFANG TECHNOLOGY DEVELOPMENT Co.,Ltd. |