CN102856400A - 光电转换组件、装置及阵列装置 - Google Patents
光电转换组件、装置及阵列装置 Download PDFInfo
- Publication number
- CN102856400A CN102856400A CN2012100341149A CN201210034114A CN102856400A CN 102856400 A CN102856400 A CN 102856400A CN 2012100341149 A CN2012100341149 A CN 2012100341149A CN 201210034114 A CN201210034114 A CN 201210034114A CN 102856400 A CN102856400 A CN 102856400A
- Authority
- CN
- China
- Prior art keywords
- photoelectric conversion
- display
- conversion component
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 228
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000035515 penetration Effects 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 118
- 239000011159 matrix material Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 26
- 239000004973 liquid crystal related substance Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 238000001228 spectrum Methods 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000012044 organic layer Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 230000004075 alteration Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000005315 stained glass Substances 0.000 claims description 2
- 230000009182 swimming Effects 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- -1 acryl Chemical group 0.000 claims 2
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000004417 polycarbonate Substances 0.000 claims 1
- 229920000515 polycarbonate Polymers 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 239000012462 polypropylene substrate Substances 0.000 claims 1
- 239000004800 polyvinyl chloride Substances 0.000 claims 1
- 229920000915 polyvinyl chloride Polymers 0.000 claims 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0468—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/38—Energy storage means, e.g. batteries, structurally associated with PV modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E70/00—Other energy conversion or management systems reducing GHG emissions
- Y02E70/30—Systems combining energy storage with energy generation of non-fossil origin
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100123404A TWI565087B (zh) | 2011-07-01 | 2011-07-01 | 具有光電轉換元件的裝置、陣列裝置及液晶顯示器 |
TW100123404 | 2011-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102856400A true CN102856400A (zh) | 2013-01-02 |
CN102856400B CN102856400B (zh) | 2016-05-04 |
Family
ID=47389337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210034114.9A Expired - Fee Related CN102856400B (zh) | 2011-07-01 | 2012-02-15 | 光电转换组件、装置及阵列装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9590124B2 (zh) |
CN (1) | CN102856400B (zh) |
TW (1) | TWI565087B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199134A (zh) * | 2013-03-11 | 2013-07-10 | 辽宁德菲格瑞特新型节能材料有限公司 | 石墨烯电极复合太阳能发电玻璃 |
CN103887592A (zh) * | 2014-03-13 | 2014-06-25 | 清华大学 | 用于飞行器的集成太阳能电池板的平面反射阵天线 |
WO2015106536A1 (zh) * | 2014-01-16 | 2015-07-23 | 京东方科技集团股份有限公司 | 一种背光模组和显示装置 |
CN105511125A (zh) * | 2015-12-30 | 2016-04-20 | 豪威半导体(上海)有限责任公司 | 一种lcos显示装置及制造方法 |
CN108230908A (zh) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
CN109801986A (zh) * | 2017-11-17 | 2019-05-24 | 新奥(内蒙古)石墨烯材料有限公司 | 太阳能电池及其制备方法 |
CN110047957A (zh) * | 2019-04-01 | 2019-07-23 | 南京邮电大学 | 一种中红外光探测器及其制备方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI565087B (zh) * | 2011-07-01 | 2017-01-01 | 劉鴻達 | 具有光電轉換元件的裝置、陣列裝置及液晶顯示器 |
JP2014086490A (ja) * | 2012-10-22 | 2014-05-12 | Toshiba Corp | 発光発電モジュール、発光発電装置 |
US20140280560A1 (en) * | 2013-03-15 | 2014-09-18 | Facebook, Inc. | Capturing User Information In An Online System Based On Real-World Actions |
TWI488087B (zh) * | 2013-06-14 | 2015-06-11 | Au Optronics Corp | 輸入裝置 |
KR102216542B1 (ko) | 2014-05-21 | 2021-02-17 | 삼성전자주식회사 | 2차원 물질을 이용한 수평형 다이오드를 포함하는 전자소자 제조방법 |
TWI582663B (zh) * | 2016-03-25 | 2017-05-11 | 聯相光電股份有限公司 | 整合太陽能發電與觸控功能的結構 |
KR102461536B1 (ko) | 2016-06-14 | 2022-11-01 | 삼성전자 주식회사 | 편광 특성을 갖는 태양 전지 및 이를 구비한 전자 장치 |
WO2020028341A1 (en) * | 2018-07-30 | 2020-02-06 | Lumileds Llc | Infrared light emitting device |
CN208795984U (zh) * | 2018-10-23 | 2019-04-26 | 北京京东方光电科技有限公司 | 电子墨水屏的显示基板和显示装置 |
JP7352903B2 (ja) * | 2019-04-10 | 2023-09-29 | パナソニックIpマネジメント株式会社 | 撮像装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101046627A (zh) * | 2006-03-29 | 2007-10-03 | 群康科技(深圳)有限公司 | 彩色滤光片基板的制造方法 |
US20080158138A1 (en) * | 2006-12-27 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof, and electronic device with the liquid crystal display device |
CN101499492A (zh) * | 2008-02-02 | 2009-08-05 | 财团法人工业技术研究院 | 透明型太阳能电池模块 |
CN101852947A (zh) * | 2009-03-31 | 2010-10-06 | 英特尔公司 | 用于显示设备的集成光电池 |
CN101877371A (zh) * | 2009-04-29 | 2010-11-03 | 杜邦太阳能有限公司 | 用于制作部分透明的光伏模块的工艺 |
CN102097035A (zh) * | 2009-12-11 | 2011-06-15 | 财团法人工业技术研究院 | 显示模块及应用其的太阳电池、电子书及户外广告牌 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
US6233027B1 (en) * | 1997-01-07 | 2001-05-15 | Canon Kabushiki Kaisha | Liquid crystal device and process for production thereof |
US6046466A (en) * | 1997-09-12 | 2000-04-04 | Nikon Corporation | Solid-state imaging device |
US6031655A (en) * | 1997-09-12 | 2000-02-29 | Canon Kabushiki Kaisha | Spatial light modulator and picture-forming apparatus including same |
EP1056139A3 (en) * | 1999-05-28 | 2007-09-19 | Sharp Kabushiki Kaisha | Method for manufacturing photoelectric conversion device |
US6452088B1 (en) * | 2001-04-16 | 2002-09-17 | Airify Communications, Inc. | Power generating display |
JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
US20070153354A1 (en) * | 2005-12-22 | 2007-07-05 | Solbeam, Inc. | Minimizing lensing in electro-optic prisms |
EP1970959A3 (en) * | 2007-03-12 | 2013-07-31 | FUJIFILM Corporation | Photoelectric conversion element and solid-state imaging device |
US8716889B2 (en) * | 2011-03-14 | 2014-05-06 | Chandramouli Vaidyanathan | Solar powered electrical generation device and related methods |
TWI565087B (zh) * | 2011-07-01 | 2017-01-01 | 劉鴻達 | 具有光電轉換元件的裝置、陣列裝置及液晶顯示器 |
-
2011
- 2011-07-01 TW TW100123404A patent/TWI565087B/zh not_active IP Right Cessation
-
2012
- 2012-02-15 CN CN201210034114.9A patent/CN102856400B/zh not_active Expired - Fee Related
- 2012-06-29 US US13/537,084 patent/US9590124B2/en active Active
-
2017
- 2017-01-23 US US15/412,074 patent/US20170133526A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101046627A (zh) * | 2006-03-29 | 2007-10-03 | 群康科技(深圳)有限公司 | 彩色滤光片基板的制造方法 |
US20080158138A1 (en) * | 2006-12-27 | 2008-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof, and electronic device with the liquid crystal display device |
CN101499492A (zh) * | 2008-02-02 | 2009-08-05 | 财团法人工业技术研究院 | 透明型太阳能电池模块 |
CN101852947A (zh) * | 2009-03-31 | 2010-10-06 | 英特尔公司 | 用于显示设备的集成光电池 |
CN101877371A (zh) * | 2009-04-29 | 2010-11-03 | 杜邦太阳能有限公司 | 用于制作部分透明的光伏模块的工艺 |
CN102097035A (zh) * | 2009-12-11 | 2011-06-15 | 财团法人工业技术研究院 | 显示模块及应用其的太阳电池、电子书及户外广告牌 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199134A (zh) * | 2013-03-11 | 2013-07-10 | 辽宁德菲格瑞特新型节能材料有限公司 | 石墨烯电极复合太阳能发电玻璃 |
WO2015106536A1 (zh) * | 2014-01-16 | 2015-07-23 | 京东方科技集团股份有限公司 | 一种背光模组和显示装置 |
US9942961B2 (en) | 2014-01-16 | 2018-04-10 | Boe Technology Group Co., Ltd. | Backlight module and display apparatus |
CN103887592A (zh) * | 2014-03-13 | 2014-06-25 | 清华大学 | 用于飞行器的集成太阳能电池板的平面反射阵天线 |
CN105511125A (zh) * | 2015-12-30 | 2016-04-20 | 豪威半导体(上海)有限责任公司 | 一种lcos显示装置及制造方法 |
CN105511125B (zh) * | 2015-12-30 | 2018-11-09 | 豪威半导体(上海)有限责任公司 | 一种lcos显示装置及制造方法 |
CN109801986A (zh) * | 2017-11-17 | 2019-05-24 | 新奥(内蒙古)石墨烯材料有限公司 | 太阳能电池及其制备方法 |
CN108230908A (zh) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
CN110047957A (zh) * | 2019-04-01 | 2019-07-23 | 南京邮电大学 | 一种中红外光探测器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130000690A1 (en) | 2013-01-03 |
US9590124B2 (en) | 2017-03-07 |
TWI565087B (zh) | 2017-01-01 |
TW201304154A (zh) | 2013-01-16 |
US20170133526A1 (en) | 2017-05-11 |
CN102856400B (zh) | 2016-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102856400B (zh) | 光电转换组件、装置及阵列装置 | |
US11934058B2 (en) | Display device, multi-screen display device using the same and method for manufacturing the same | |
CN101995691B (zh) | 液晶显示装置 | |
JP5160662B2 (ja) | ディスプレイと光電エレメントとを統合したディスプレイデバイス、およびその製造方法 | |
AU2012213330B2 (en) | Display device with integrated photovoltaic cells and improved brightness | |
US8632201B2 (en) | Display device with integrated photovoltaic cells, with improved luminosity | |
CN108470776B (zh) | 用于显示器或具有显示器的装置的波长选择性光电装置 | |
CN202076270U (zh) | Amoled显示和太阳能电池的集成模块和应用该模块的电子设备 | |
US9477019B2 (en) | Color filter substrate, display device and method for manufacturing a color filter substrate | |
CN106094320B (zh) | 彩膜基板及液晶显示装置 | |
WO2012004915A1 (ja) | 太陽電池パネル、液晶表示システム、及び太陽電池パネルの制御方法 | |
CN103633114A (zh) | 双面发光式显示面板 | |
CN109841662A (zh) | 一种显示面板及其制备方法、显示装置 | |
KR20200005757A (ko) | 디스플레이 일체형 솔라셀 패널 | |
CN213691234U (zh) | 具有太阳能电池走线的显示装置 | |
KR20190141549A (ko) | 배면 디스플레이 일체형 솔라셀 패널 | |
JP2009229975A (ja) | 電気掲示器 | |
KR102630146B1 (ko) | 디스플레이와 전력공급부가 일체형으로 구비되는 시각정보 표출 장치 | |
WO2012032751A1 (ja) | 太陽電池パネル、表示装置、及び太陽電池パネルの制御方法 | |
CN102591054A (zh) | 液晶显示面板 | |
CN109904209B (zh) | 有机发光显示面板及制造方法 | |
CN100553389C (zh) | 有机发光二极管显示面板 | |
US20120013833A1 (en) | Liquid crystal display panel | |
CN108550613A (zh) | 一种显示模组 | |
CN204066672U (zh) | 一种自持式发光交通标识牌 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: KUNSHAN CHAOLV GREEN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: LIU HONGDA Effective date: 20140826 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: 215300 SUZHOU, JIANGSU PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140826 Address after: Suzhou City, Jiangsu province Yushan town 215300 Dengyun Road No. 268 Applicant after: Kunshan Chaolv Optoelectronics Co.,Ltd. Address before: Hsinchu County, Taiwan, China Applicant before: Liu Hongda |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190329 Address after: 528000 Unit I216-14, 15th Floor, Building 8, Hantian Science and Technology City A District, 17 Shenhai Road, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Patentee after: Foshan Zhongda Hongchuang Technology Co.,Ltd. Address before: 215300 Dengyun Road 268, Yushan Town, Suzhou City, Jiangsu Province Patentee before: Kunshan Chaolv Optoelectronics Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220708 Address after: 510000 5212, building 5, No. 4, Weiwu Road, Zengjiang street, Zengcheng District, Guangzhou, Guangdong Province Patentee after: Guangzhou liangmaida Digital Technology Co.,Ltd. Address before: 528000 Unit I216-14, 15th Floor, Building 8, Hantian Science and Technology City A District, 17 Shenhai Road, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Patentee before: Foshan Zhongda Hongchuang Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160504 |