CN102832264A - Solar cell having back surface field structures and manufacturing method thereof - Google Patents
Solar cell having back surface field structures and manufacturing method thereof Download PDFInfo
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- CN102832264A CN102832264A CN2011101604804A CN201110160480A CN102832264A CN 102832264 A CN102832264 A CN 102832264A CN 2011101604804 A CN2011101604804 A CN 2011101604804A CN 201110160480 A CN201110160480 A CN 201110160480A CN 102832264 A CN102832264 A CN 102832264A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell having back surface field structures and a manufacturing method of the solar cell. The cell comprises a wafer, a dielectric layer, multiple back surface filed structures, a conductive rubber layer and a conductive thin film. The conductive rubber layer comprises multiple spaced conductive contact parts and multiple conductive bump parts connected with the conductive contact parts. The improvement of the manufacturing method provided by the invention mainly lies in the fact that, when the conductive rubber layer is manufactured, the conductive rubber layer is only covered on partial surface instead of the entire surface of the dielectric layer, and further, the contact area between the conductive rubber layer and the dielectric layer is reduced, and subsequently, a layer of conductive thin film is covered on the conductive rubber layer and the dielectric layer. Through the improvement on the manufacturing process, the damage of the conductive rubber layer to the dielectric layer can be reduced, the dielectric layer is made to have good quality, the cell conversion rate can be increased, and the curvature problem of the solar cell can be improved.
Description
Technical field
The present invention relates to a kind of solar cell and manufacturing approach thereof, particularly relate to a kind of solar cell and manufacturing approach thereof with back of the body electric field structure.
Background technology
Consult Fig. 1; Manufacturing process sketch map for a kind of known solar cells 1; At this structure (please refer to last figure of Fig. 1) of this solar cell 1 is described earlier; Mainly comprise: wafer 11, dielectric layer 12, a plurality of back of the body electric field structure (local back surface field is called for short LBSF) 13 and metal glue-line 14 that is formed at the part of this wafer 11.
Wherein, this wafer 11 is used for transform light energy is become electric energy, and comprises p type silicon substrate, is formed at retes such as n type emitter layer and anti-reflective film on this substrate.This dielectric layer 12 is formed at the back side 111 of this wafer 11, is used to reduce the speed of charge carrier in these wafer 11 surface recombination (recombination), promotes the efficient of solar cell 1.Said dielectric layer 12 have a plurality of run through wear groove 121; Said back of the body electric field structure 13 is corresponding said to be worn groove 121 and is formed at 111 places, wafer 11 back sides; It is the p type semiconductor layer of carrier concentration greater than the carrier concentration of this p type silicon substrate; Utilize its electric field action to stop electronics to move, make electronics be collected in the n type emitter layer of this wafer 11, to promote conversion efficiency towards the back side 111 directions of this wafer 11.And this metal glue-line 14 is to form by aluminium glue is dry; What dielectric layer 12 was stretched on the surface and local that is positioned at this dielectric layer 12 wears groove 121; And then contact with the back side 111 of this wafer 11 to form and be electrically connected, see through power delivery that metal glue-line 14 produces this wafer 11 to outside.
This solar cell 1 is on making; Be to form the complete dielectric layer 12 of one deck at the back side 111 of this wafer 11 earlier; And the local etching of this dielectric layer 12 removed and form wear groove 121, utilize screen printing mode that aluminium glue is coated on these dielectric layer 12 surfaces to form this metal glue-line 14 with the mode that is close to whole again.Follow this wafer 11 of sintering, this aluminium glue material can diffuse in this wafer 11, makes the part of this wafer 11 form the back of the body electric field structure 13 that is formed by aluminium-silica hybrid material.
Yet in the sintering process of high temperature, the aluminium glue material also can spread, corrode this dielectric layer 12, causes the destructurized of dielectric layer 12, thereby influences the function of this dielectric layer 12, and conversion efficiency is descended.In addition, because aluminium glue is contained the whole dielectric layer 12 of contact fully, the contact area of aluminium glue and dielectric layer 12 is big, and following two problems are arranged when causing sintering: (1) aluminium glue will be bigger for the injury of dielectric layer 12; (2) because the thermal coefficient of expansion of different materials is different,, easily this wafer 11 is caused bigger stress, make solar cell 1 that warpage issues arranged so aluminium glue is different with the thermal expansion degree of other rete.
Summary of the invention
The problem that invention will solve
The object of the present invention is to provide a kind of quality, the lifting conversion efficiency that can keep dielectric layer, improve the solar cell and the manufacturing approach thereof with back of the body electric field structure of battery warpage issues.
The scheme that is used to deal with problems
The present invention has the solar cell of back of the body electric field structure, comprises: a wafer, a dielectric layer, and a plurality of back of the body electric field structure, and this wafer is used for transform light energy is become electric energy, and comprises an incidence surface and the back side in contrast to this incidence surface; This dielectric layer comprise one towards first, one of the back side of this wafer in contrast to this first second, and a plurality of groove of wearing that runs through this first and second; Said back of the body electric field structure is corresponding respectively saidly to be worn groove and is positioned at the back side place of this wafer; It is characterized in that,
This solar cell with back of the body electric field structure also comprises a conductive adhesive layer and layer of conductive film; This conductive adhesive layer comprises a plurality of said electrically conducting contacts of wearing groove and contacting said back of the body electric field structure that lay respectively at this dielectric layer; And a plurality of protruding in from said electrically conducting contact respectively wear outside the groove and the conduction teat of each interval, said conduction teat and contact second local surfaces of this dielectric layer; This conductive film is coated in the conduction teat of this conductive adhesive layer and second of this dielectric layer.
The present invention has the solar cell of back of the body electric field structure, and the material of this conductive adhesive layer is an aluminum or aluminum alloy.
The present invention has the solar cell of back of the body electric field structure, and the material of this conductive film is a metal.
The present invention has the solar cell of back of the body electric field structure, and the material of this dielectric layer is oxide, nitride, or the composite material of oxide and nitride.
The present invention has the solar cell of back of the body electric field structure, and the thickness of the conduction teat of this conductive adhesive layer is 10 μ m～50 μ m, and the thickness of this conductive film is 10nm～10 μ m.
The present invention has the manufacturing approach of the solar cell of back of the body electric field structure, comprises following step: (A) prepare the said wafer that is used for transform light energy is become electric energy, form said dielectric layer at the said back side of this wafer; (B) this dielectric layer of etching is to form a plurality of grooves of wearing; It is characterized in that this manufacturing approach also comprises following step:
(C) at local surfaces coating one deck conducting resinl of wearing groove and this dielectric layer of this dielectric layer;
(D) this wafer is imposed heat treatment; Make this conducting resinl be solidified into said conductive adhesive layer; This conductive adhesive layer comprises a plurality of electrically conducting contacts of wearing groove that lay respectively at this dielectric layer, and a plurality ofly protrudes in the said conduction teat of wearing outside the groove from said electrically conducting contact respectively, and in heat treatment process; The material of this conducting resinl gets into this wafer via the back side diffusion of this wafer, this wafer is formed saidly a plurality ofly be positioned at this place, back side and respectively to the back of the body electric field structure of wearing the groove position that should dielectric layer;
(E) the said conductive film of coating on this conductive adhesive layer and this dielectric layer.
The present invention has the manufacturing approach of the solar cell of back of the body electric field structure, and the material of the conducting resinl of this step (C) is an aluminum or aluminum alloy.
The present invention has the manufacturing approach of the solar cell of back of the body electric field structure, and the material of the conductive film of this step (E) is a metal.
The present invention has the manufacturing approach of solar cell of back of the body electric field structure, and this step (C) is to utilize silk screen printing or ink jet printing mode that this conducting resinl is coated on the local surfaces of this dielectric layer, and this step (E) is to utilize this conductive film of vacuum coating mode coating.
The effect of invention
Beneficial effect of the present invention is: through the improvement on the processing procedure; Produce the solar cell of structure innovation; Reduce the contact area of conducting resinl and dielectric layer, alleviate the infringement of conducting resinl, make dielectric layer have better quality, promote battery conversion efficiency this dielectric layer; Can also reduce conductive adhesive layer and the stress that other rete produces because the thermal expansion degree is different, improve the warpage issues of solar cell.
Description of drawings
Fig. 1 is a kind of manufacturing process sketch map of known solar cells;
Fig. 2 is a cross-sectional schematic, shows that the present invention has the preferred embodiment of the solar cell of back of the body electric field structure;
Fig. 3 is a process block diagram, shows that the present invention has the preferred embodiment of the manufacturing approach of the solar cell of carrying on the back electric field structure;
Fig. 4 is the schematic flow sheet of each step of this preferred embodiment when carrying out;
Fig. 5 is the resolution chart of a quantum efficiency with respect to optical wavelength, shows the test result of the present invention and comparative example.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
Consult Fig. 2, the preferred embodiment that the present invention has the solar cell of back of the body electric field structure comprises: wafer 2, dielectric layer 3, a plurality of back of the body electric field structure 4, conductive adhesive layer 5 and conductive film 6.
This wafer 2 is used for transform light energy is become electric energy, and comprises incidence surface 21 and in contrast to the back side 22 of this incidence surface 21.In fact this wafer 2 comprises that a substrate with this back side 22 23, one are formed at the emitter layer on this substrate 23, and rete such as one deck anti-reflective film, and the substrate 23 of present embodiment is a p type silicon substrate 23, and this emitter layer is a n type emitter layer.Because these wafer 2 non-improvement emphasis of the present invention; Do not specify at this; And the present invention must not limit the concrete structure and the layer body quantity of this wafer 2 when implementing; Because can apparent sun can battery demand and increase the rete of difference in functionality, but Fig. 2 is only with all retes on this substrate 23 of simple layer body signal.
This dielectric layer 3 generally is called passivation layer (passivation layer) again; Be positioned at the back side 22 of this wafer 2; And comprise towards first 31 of the back side 22 of this wafer 2, in contrast to this first 31 second 32, and a plurality of run through this first 31 and second 32 wear groove 33, the material of this dielectric layer 3 is oxide, nitride; Or the composite material of oxide and nitride, for example: SiO
x, SiN
x, Al
2O
3, perhaps composite bed SiO for example
2/ SiN
x, Al
2O
3/ SiN
xThis dielectric layer 3 is used to fill up, reduce blemish, and then reduces the speed of charge carrier at the back side of this wafer 2 22 compound (recombination), promotes the conversion efficiency of battery.
Said back of the body electric field structure 4 is corresponding said to be worn groove 33 and is formed at 22 places, the back side of wafer 2; The back of the body electric field structure 4 of present embodiment is aluminium silicon (Al-Si) composite material; It is the p type semiconductor layer (generally again be called p+ layer) of carrier concentration greater than the carrier concentration of this p type silicon substrate 23; Utilize its electric field action block electrons to move towards the back side 22 directions of this wafer 2; Make electronics be collected in the n type emitter layer of this wafer 2, therefore can promote carrier collection efficient and conversion efficiency through back of the body electric field structure 4.
Need to prove that when the substrate 23 of wafer 2 was n type substrate, this back of the body electric field structure 4 just must be the n type semiconductor layer (n+ layer) of carrier concentration greater than the carrier concentration of this substrate 23.
The material of the conductive adhesive layer 5 of present embodiment is an aluminum or aluminum alloy; For example aerdentalloy, alusil alloy; But be not limited thereto, and comprise a plurality of said electrically conducting contacts 51 of wearing groove 33 and contacting said back of the body electric field structure 4 that lay respectively at this dielectric layer 3, and a plurality of protruding in from said electrically conducting contact 51 respectively worn outside the groove 33 and the conduction teat 52 of each interval; And second 32 local surfaces of said conduction teat 52 these dielectric layers 3 of contact; The thickness d 1 of said conduction teat 52 is 10 microns (μ m)～50 μ m, under this thickness limits, has preferable conducting function.
This conductive film 6 is the rete of one deck continuous whole, and be coated on the conduction teat 52 of this conductive adhesive layer 5 and second 32 of this dielectric layer 3 not by on these conductive adhesive layer 5 covered surfaces.The material of this conductive film 6 is to have the conduction and a metal of reflection function, for example silver, aluminium, copper, titanium etc., but be not limited thereto.Arrive the power delivery that this wafer 2 produces outside through this conductive film 6 and this conductive adhesive layer 5; And because this conductive film 6 is used to cooperate this conductive adhesive layer 5 conductions; So the thickness d 2 of conductive film 6 relatively can be less than d1, so the thickness d 2 that the present invention limits this conductive film 6 is 10 nanometers (nm)～10 μ m.
Consult Fig. 2,3,4, the present invention has the preferred embodiment of the manufacturing approach of the solar cell of carrying on the back electric field structure, comprises:
(1) carry out step 71: utilize vapor deposition (for example chemical vapour deposition (CVD)) or sputter equal vacuum plated film mode, plate the dielectric layer 3 of one deck continuous whole at the back side 22 of this wafer 2, its material such as aforementioned is sull, nitride or its composite material.Certainly; This wafer 2 can be manufactured with needed layer body in advance; For example must utilize diffusion process on the silicon substrate 23 of this p type, to form n type emitter layer; And utilize the vacuum coating mode to form steps such as anti-reflective film, but because the non-improvement emphasis of the present invention of processing procedure of wafer 2 itself, so no longer explanation.
(2) carry out step 72: on this dielectric layer 3, form said a plurality of grooves 33 of wearing, this step can be utilized laser ablation (laser ablation) mode, to the part irradiating laser of this dielectric layer 3, the irradiation position is removed by gasification and forms and wears groove 33.The etching glue (etching paste) that perhaps can utilize screen process press will have etch capabilities is coated on the local surfaces of this dielectric layer 3; Utilize again water-washing method with etching glue clean remove after, the part of dielectric layer 3 is etched remove and forms the said groove 33 of wearing.
(3) carry out step 73: groove 33 and this dielectric layer 3 second 32 of wearing at this dielectric layer 3 is adjacent to local surfaces coating one deck conducting resinl 5 ' of wearing groove 33; The conducting resinl 5 ' of present embodiment is the aqueous aluminium glue of cream; (it means when carrying out silk screen printing or ink jet printing can to utilize silk screen printing (screen printing) or ink jet printing (ink-jet printing) mode contraposition coating; Must make printing machine aim at the specific region of this dielectric layer 3, with local surfaces printing aluminium glue at dielectric layer 3) on the local surfaces of this dielectric layer 3.Certainly, this conducting resinl 5 ' also can be other material, the for example aluminum alloy materials of aerdentalloy or alusil alloy etc.
(4) carry out step 74: this wafer 2 is imposed heat treatment (heat treatment), make this conducting resinl 5 ' dry solidification become this conductive adhesive layer 5.The described heat treatment of present embodiment; Its concrete mode is high temperature sintering (firing); And in heat treatment process; The aluminium that is arranged in the conducting resinl 5 ' of wearing groove 33 diffuses into wafer 2 inside via the back side 22 of this wafer 2, and aluminium is doped in the substrate 23 of this wafer 2 and closes with the silication of substrate 23, makes this wafer 2 form said back of the body electric field structure 4 at these 22 places, back side and corresponding to the position of wearing groove 33.
Said conductive adhesive layer 5 can be a plurality of strips, point-like or other shape, certainly, forms and aforementionedly must produce predetermined shape so that this conductive adhesive layer 5 also has reservation shape when wearing groove 33.
(5) carry out step 75: for example utilize vapor deposition or sputter equal vacuum plated film mode to form this conductive film 6, make this conductive film 6 be coated on this conductive adhesive layer 5 and this dielectric layer 3 second 32 not by on these conductive adhesive layer 5 covered surfaces.Because the conductive adhesive layer 5 that the present invention processes through above-mentioned steps 74 is discontinuous layer body, therefore passes through this step and forms this continuous conductive film 6, purpose is to reach favorable conductive function and long wavelength's reflection function.
Consult Fig. 2 and table 1; Table 1 is each item characteristic test result of the solar cell of solar cell of the present invention and comparative example, and wherein, the material of conductive film 6 of the present invention is a silver; Its thickness is 800 nanometers (nm), and comparative example is the solar cell of traditional structure shown in Figure 1.V in the table
OcRepresent open circuit voltage, J
ScRepresent short circuit current, the F.F value is represented fill factor, curve factor (fill factor), and Eff. is a conversion efficiency.
[table 1]
| J sc(mA/cm 2) | V oc(V) | F.F. be worth | Eff.(％) | |
| The present invention | 8.782 | 0.617 | 0.7125 | 15.86 |
| Comparative example | 8.273 | 0.608 | 0.7556 | 15.61 |
Can find out that by table 1 result the innovation structure design of solar cell of the present invention for comparative example, has bigger short circuit current, open circuit voltage and conversion efficiency.This is because the present invention passes through the improvement on the processing procedure; Make conducting resinl (aluminium glue) only contact the local surfaces of this dielectric layer 3; Aluminium glue with respect to comparative example is contained the method for making that contacts whole dielectric layer fully; The present invention dwindles the contact area of this conductive adhesive layer 5 and dielectric layer 3; Can alleviate erosion and infringement that 5 pairs of these dielectric layers 3 of conductive adhesive layer cause, keep this dielectric layer 3 film layer quality, make dielectric layer 3 can give full play to the effect that reduces the charge carrier recombination rate, so can promote the characteristics such as short circuit current, open circuit voltage, conversion efficiency of battery.Need to prove; Though F.F. value of the present invention is less with respect to comparative example; But for the effect did not influence that promotes short circuit current, open circuit voltage and conversion efficiency, and the present invention just can promote the F.F. value as long as be coated with at this conductive film 6 and accomplish good insulation in the process.
Consult Fig. 2,5; Fig. 5 is quantum efficiency (the Quantum Efficiency of the present invention's (thickness of conductive film 6 is 800nm) and this comparative example; Be called for short QE) corresponding to the experimental result of wavelength, show the present invention for comparative example, the L-band about 950～1150nm has good quantum efficiency; This is because the metal conductive film 6 of the present invention can be with passing through this wafer 2 and unemployed light originally; Reflect back into this wafer 2 once again and use, particularly the good reflection effect is also arranged, thereby promote light utilization and quantum efficiency for long wavelength's light.This experimental result also represents dielectric layer 3 qualities of the present invention good simultaneously, brings into play its effect effectively.
In sum; Through the improvement on the processing procedure; Only in the local surfaces of this dielectric layer 3 but not whole this conducting resinl of surperficial coating, reduce the contact area of conducting resinl and dielectric layer 3, alleviate in the sintering process this conducting resinl the infringement of this dielectric layer 3; Make dielectric layer 3 have the effect of better quality and good reduction charge carrier recombination rate; In addition also because the reducing of contact area, can reduce the stress that conductive adhesive layer 5 and other rete produce because the thermal expansion degree is different, and then improve the warpage issues of solar cell.
Claims (10)
1. one kind has the solar cell of carrying on the back electric field structure, comprises: a wafer, a dielectric layer and a plurality of back of the body electric field structure, and this wafer is used for transform light energy is become electric energy, and comprises an incidence surface and the back side in contrast to this incidence surface; This dielectric layer comprise one towards first, one of the back side of this wafer in contrast to this first second and a plurality of groove of wearing that runs through this first and second; Said back of the body electric field structure is corresponding respectively saidly to be worn groove and is positioned at the back side place of this wafer; It is characterized in that,
This solar cell with back of the body electric field structure also comprises a conductive adhesive layer and layer of conductive film; This conductive adhesive layer comprises a plurality of said electrically conducting contacts of wearing groove and contacting said back of the body electric field structure that lay respectively at this dielectric layer; And a plurality of protruding in from said electrically conducting contact respectively wear outside the groove and the conduction teat of each interval, said conduction teat and contact second local surfaces of this dielectric layer; This conductive film is coated in the conduction teat of this conductive adhesive layer and second of this dielectric layer.
2. the solar cell with back of the body electric field structure according to claim 1 is characterized in that the material of this conductive adhesive layer is an aluminum or aluminum alloy.
3. the solar cell with back of the body electric field structure according to claim 1 and 2 is characterized in that the material of this conductive film is a metal.
4. the solar cell with back of the body electric field structure according to claim 1 is characterized in that the material of this dielectric layer is oxide, nitride, or the composite material of oxide and nitride.
5. the solar cell with back of the body electric field structure according to claim 1 is characterized in that the thickness of the conduction teat of this conductive adhesive layer is 10 μ m～50 μ m, and the thickness of this conductive film is 10nm～10 μ m.
6. the manufacturing approach with solar cell of back of the body electric field structure comprises following step: steps A: prepare a wafer that is used for transform light energy is become electric energy, form a dielectric layer at a back side of this wafer; Step B: this dielectric layer of etching is to form a plurality of grooves of wearing; It is characterized in that this manufacturing approach also comprises following step:
Step C: at local surfaces coating one deck conducting resinl of wearing groove and this dielectric layer of this dielectric layer;
Step D: this wafer is imposed heat treatment; Make this conducting resinl be solidified into a conductive adhesive layer; This conductive adhesive layer comprises a plurality of electrically conducting contacts of wearing groove that lay respectively at this dielectric layer, and a plurality ofly protrudes in the said conduction teat of wearing outside the groove from said electrically conducting contact respectively, and in heat treatment process; The material of this conducting resinl gets into this wafer via the back side diffusion of this wafer, this wafer is formed a plurality ofly be positioned at this place, back side and respectively to the back of the body electric field structure of wearing the groove position that should dielectric layer;
Step e: coating layer of conductive film on this conductive adhesive layer and this dielectric layer.
7. the manufacturing approach with solar cell of back of the body electric field structure according to claim 6 is characterized in that the material of the conducting resinl of this step C is an aluminum or aluminum alloy.
8. according to claim 6 or 7 described manufacturing approaches, it is characterized in that the material of the conductive film of this step e is a metal with solar cell of back of the body electric field structure.
9. according to claim 6 or 7 described manufacturing approaches with solar cell of back of the body electric field structure; It is characterized in that; This step C utilizes silk screen printing or ink jet printing mode that this conducting resinl is coated on the local surfaces of this dielectric layer, and this step e is to utilize this conductive film of vacuum coating mode coating.
10. the manufacturing approach with solar cell of back of the body electric field structure according to claim 9 is characterized in that the thickness of the conduction teat of this conductive adhesive layer is 10 μ m～50 μ m, and the thickness of this conductive film is 10nm～10 μ m.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346181A (en) * | 2013-05-30 | 2013-10-09 | 南京日托光伏科技有限公司 | Solar cell module without welding strips and preparation method thereof |
| CN104112791A (en) * | 2013-04-22 | 2014-10-22 | 茂迪股份有限公司 | Method for manufacturing solar cell |
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| TWM328077U (en) * | 2007-07-20 | 2008-03-01 | zhong-lin Wang | Electrode of solar cell |
| US20090301555A1 (en) * | 2008-06-09 | 2009-12-10 | Shih-Cheng Lin | Solar cell, solar module and system and fabrication method thereof |
| US20100098840A1 (en) * | 2008-10-22 | 2010-04-22 | Industrial Technology Research Institute | Method of manufacturing back electrode of silicon bulk solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM328077U (en) * | 2007-07-20 | 2008-03-01 | zhong-lin Wang | Electrode of solar cell |
| US20090301555A1 (en) * | 2008-06-09 | 2009-12-10 | Shih-Cheng Lin | Solar cell, solar module and system and fabrication method thereof |
| US20100098840A1 (en) * | 2008-10-22 | 2010-04-22 | Industrial Technology Research Institute | Method of manufacturing back electrode of silicon bulk solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112791A (en) * | 2013-04-22 | 2014-10-22 | 茂迪股份有限公司 | Method for manufacturing solar cell |
| CN104112791B (en) * | 2013-04-22 | 2016-04-20 | 茂迪股份有限公司 | Method for manufacturing solar cell |
| CN103346181A (en) * | 2013-05-30 | 2013-10-09 | 南京日托光伏科技有限公司 | Solar cell module without welding strips and preparation method thereof |
| CN103346181B (en) * | 2013-05-30 | 2017-03-22 | 南京日托光伏科技有限公司 | Solar cell module without welding strips and preparation method thereof |
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Application publication date: 20121219 |