CN102828243B - 太阳能电池用锗锡共掺单晶硅及其制备方法 - Google Patents
太阳能电池用锗锡共掺单晶硅及其制备方法 Download PDFInfo
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CN102828243B true CN102828243B (zh) | 2015-03-18 |
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Families Citing this family (4)
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CN105002557A (zh) * | 2015-08-12 | 2015-10-28 | 常州天合光能有限公司 | 一种镓锗硼共掺多晶硅及其制备方法 |
CN105019022A (zh) * | 2015-08-12 | 2015-11-04 | 常州天合光能有限公司 | 一种镓锗硼共掺准单晶硅及其制备方法 |
CN105755538A (zh) * | 2016-05-05 | 2016-07-13 | 中国科学院合肥物质科学研究院 | 一种掺锡冶金多晶硅铸锭的制备方法 |
CN106222742B (zh) * | 2016-09-12 | 2019-01-29 | 江西赛维Ldk太阳能高科技有限公司 | 一种晶体硅及其制备方法 |
Citations (7)
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JPS5587456A (en) * | 1978-12-25 | 1980-07-02 | Nec Corp | Semiconductor substrate |
JPS59121340A (ja) * | 1982-12-28 | 1984-07-13 | Toshiba Corp | 電子写真感光体 |
JP2000269139A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 多結晶シリコン膜の形成方法 |
JP2003298079A (ja) * | 2002-04-01 | 2003-10-17 | Canon Inc | 多結晶シリコン太陽電池の製造方法及び多結晶シリコン太陽電池 |
CN102005505A (zh) * | 2010-10-18 | 2011-04-06 | 浙江大学 | 一种抑制光衰减的掺锡晶体硅太阳电池及其制备方法 |
CN102005506A (zh) * | 2010-10-18 | 2011-04-06 | 浙江大学 | 一种抑制光衰减的掺锗晶体硅太阳电池及其制备 |
CN102593001A (zh) * | 2011-01-14 | 2012-07-18 | 中国科学院微电子研究所 | 向沟道中引入应变的方法和使用该方法制作的器件 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5587456A (en) * | 1978-12-25 | 1980-07-02 | Nec Corp | Semiconductor substrate |
JPS59121340A (ja) * | 1982-12-28 | 1984-07-13 | Toshiba Corp | 電子写真感光体 |
JP2000269139A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 多結晶シリコン膜の形成方法 |
JP2003298079A (ja) * | 2002-04-01 | 2003-10-17 | Canon Inc | 多結晶シリコン太陽電池の製造方法及び多結晶シリコン太陽電池 |
CN102005505A (zh) * | 2010-10-18 | 2011-04-06 | 浙江大学 | 一种抑制光衰减的掺锡晶体硅太阳电池及其制备方法 |
CN102005506A (zh) * | 2010-10-18 | 2011-04-06 | 浙江大学 | 一种抑制光衰减的掺锗晶体硅太阳电池及其制备 |
CN102593001A (zh) * | 2011-01-14 | 2012-07-18 | 中国科学院微电子研究所 | 向沟道中引入应变的方法和使用该方法制作的器件 |
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Application publication date: 20121219 Assignee: Zhejiang Leye Photovoltaic Science & Technology Co., Ltd. Assignor: Xi'an Longji Silicon Material Co., Ltd.|Wuxi Longji Silicon Material Co., Ltd.|Yinchuan Longji Silicon Material Co., Ltd.|Ningxia Longji Silicon Material Co., Ltd. Contract record no.: 2015610000103 Denomination of invention: Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same Granted publication date: 20150318 License type: Exclusive License Record date: 20151208 |
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Address after: 710100 Changan District, Shaanxi Province, aerospace Road, No. 388, No. Co-patentee after: Wuxi LONGi Silicon Materials Corp. Patentee after: Longji green energy Polytron Technologies Inc Co-patentee after: Ningxia LONGi Silicon Material Co.,Ltd. Co-patentee after: Yinchuan LONGi Silicon Material Co.,Ltd. Address before: 710100 Changan District, Shaanxi Province, aerospace Road, No. 388, No. Co-patentee before: Wuxi LONGi Silicon Materials Corp. Patentee before: Xi'an Longji-Silicon Co., LTD. Co-patentee before: Ningxia LONGi Silicon Material Co.,Ltd. Co-patentee before: Yinchuan LONGi Silicon Material Co.,Ltd. |
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