CN102817014A - 化学气相淀积装置中硅基气体的控制方法 - Google Patents
化学气相淀积装置中硅基气体的控制方法 Download PDFInfo
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CN201110151800.XA CN102817014B (zh) | 2011-06-08 | 2011-06-08 | 化学气相淀积装置中硅基气体的控制方法 |
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CN102817014B CN102817014B (zh) | 2014-07-02 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108048819A (zh) * | 2018-01-10 | 2018-05-18 | 德淮半导体有限公司 | 一种化学气相沉积工艺 |
CN114561626A (zh) * | 2022-02-18 | 2022-05-31 | 华虹半导体(无锡)有限公司 | 物理气相沉积装置及装置的降压方法 |
CN115167574A (zh) * | 2022-09-08 | 2022-10-11 | 拓荆科技(上海)有限公司 | 阀门温控装置及气相沉积设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1788106A (zh) * | 2003-05-13 | 2006-06-14 | 东京毅力科创株式会社 | 使用原料气体和反应性气体的处理装置 |
EP0883166B1 (en) * | 1997-06-03 | 2006-08-09 | Applied Materials, Inc. | Deposition of fluorinated silicon glass |
CN1978701A (zh) * | 2005-12-05 | 2007-06-13 | 中芯国际集成电路制造(上海)有限公司 | 改善介电层过程形成的集成电路的击穿电压的方法和装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0883166B1 (en) * | 1997-06-03 | 2006-08-09 | Applied Materials, Inc. | Deposition of fluorinated silicon glass |
CN1788106A (zh) * | 2003-05-13 | 2006-06-14 | 东京毅力科创株式会社 | 使用原料气体和反应性气体的处理装置 |
CN1978701A (zh) * | 2005-12-05 | 2007-06-13 | 中芯国际集成电路制造(上海)有限公司 | 改善介电层过程形成的集成电路的击穿电压的方法和装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108048819A (zh) * | 2018-01-10 | 2018-05-18 | 德淮半导体有限公司 | 一种化学气相沉积工艺 |
CN114561626A (zh) * | 2022-02-18 | 2022-05-31 | 华虹半导体(无锡)有限公司 | 物理气相沉积装置及装置的降压方法 |
CN114561626B (zh) * | 2022-02-18 | 2024-03-15 | 华虹半导体(无锡)有限公司 | 物理气相沉积装置及装置的降压方法 |
CN115167574A (zh) * | 2022-09-08 | 2022-10-11 | 拓荆科技(上海)有限公司 | 阀门温控装置及气相沉积设备 |
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