CN102810603A - Screen printing overprinting alignment detection method for solar cell electrodes - Google Patents
Screen printing overprinting alignment detection method for solar cell electrodes Download PDFInfo
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- CN102810603A CN102810603A CN2012103229174A CN201210322917A CN102810603A CN 102810603 A CN102810603 A CN 102810603A CN 2012103229174 A CN2012103229174 A CN 2012103229174A CN 201210322917 A CN201210322917 A CN 201210322917A CN 102810603 A CN102810603 A CN 102810603A
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Abstract
The invention relates to a screen printing overprinting alignment detection method for solar cell electrodes. The method includes the steps: a, solar cell manufacturing, namely forming a front pattern with a low square resistance value on a silicon chip substrate, forming at least one detection pattern with a low square resistance value outside a front pattern outline range, and overprinting a front electrode within the front pattern outline range by means of screen printing; and b, screen printing overprinting alignment detection, namely, applying a voltage between the front electrode and the silicon chip substrate, observing brightness of the detection patterns on an infrared picture, and judging whether front electrode printing is deflected or not. The screen printing overprinting alignment detection method for solar cell electrodes can be used for monitoring position deflection of the overprinted front electrode and is high in detection efficiency and low in detection cost.
Description
Technical field
The invention belongs to the manufacturing technology of crystal silicon solar energy battery, specifically is the silk screen printing chromatography aim detecting method of the solar cell plate electrode that detects of a kind of alignment quality that is used for to the electrode of silk screen printing chromatography on the solar battery sheet.
Background technology
In crystal silicon solar cell sheet; Usually earlier on silicon chip substrate, form preceding layer pattern through mask method or additive method; Square resistance resistance in the anterior layer pattern contour scope is lower, then through method for printing screen chromatography front electrode in anterior layer pattern contour scope.As print the appearance skew, with the final mass that influences product.And, bring difficulty therefore for the monitoring of printing skew because preceding layer pattern is invisible usually.
Be used to monitor the method for printing skew at present and have two kinds: a kind of silicon chip that is printed with same pattern that is to use; This pattern is high-visible on silicon chip; Print the deviation that measures the center line of two kinds of patterns behind the front electrode pattern in the above; With this method as monitoring printing skew, this method operation is more loaded down with trivial details, has improved manufacturing cost; Another kind is to adopt online anterior layer pattern identification system; Layer pattern and calculate this pattern and relative position that silicon chip is seen before this system can detect; The coordinate of print head is calibrated automatically according to this relative position by system, the back figure is overlapped exactly be imprinted on the anterior layer pattern.This system need adopt expensive pattern recognition system, and cost is higher, and a general configuration is fewer.
Summary of the invention
Technical problem to be solved by this invention is that providing a kind of can monitor the front electrode offset of chromatography, and the silk screen printing chromatography aim detecting method of the solar cell plate electrode that detection efficiency is high, the detection cost is low.
The silk screen printing chromatography aim detecting method of solar cell plate electrode of the present invention may further comprise the steps:
A. the manufacturing of battery sheet; On silicon chip substrate, form the lower preceding layer pattern of square resistance resistance; Outside anterior layer pattern contour scope, form the lower check pattern of at least one square resistance resistance, then through method for printing screen chromatography front electrode in anterior layer pattern contour scope;
B. silk screen printing chromatography aim detecting applies a voltage between front electrode and silicon chip substrate, on infrared photograph, observes the brightness of check pattern, judges whether the front electrode printing squints; If other zones before the brightness ratio of check pattern beyond the layer pattern are high, judge that then skew has taken place in the electrode printing; Do not have significant difference if other zones beyond the brightness of check pattern and the preceding layer pattern are compared, judge that then the electrode printing do not squint.
Preferably, a plurality of check pattern are set.
Preferably, a plurality of check pattern are divided at least one group, and one section straight line outline line of layer pattern is a benchmark before a plurality of check pattern in same group, and each check pattern in a group and this are as the arrangement that gradually changes of the shortest spacing between the outline line of benchmark; According to the quantity of brightness higher detection pattern, judge the side-play amount of front electrode.
The present invention is through forming the check pattern of low-resistance on silicon chip; The front electrode printing takes place to squint when crossing permissible value; Will cross anterior layer pattern contour line contacts with check pattern; Can clearly manifest it this moment through the mode that between preceding layer pattern and silicon chip substrate, detects voltage, and it is easy to operate, detection efficiency is high, make and to detect cost low.Its principle is: pn ties under forward bias, and barrier region and diffusion region can injected minority carriers, these non-equilibrium minority carriers constantly and majority carrier carry out compound and luminous.The logarithm of experiment proof crystal silicon solar energy battery electroluminescence intensity is directly proportional with forward current density.Under the situation that forward voltage is fixed, if the resistivity of battery sheet part is variant, then the current density of this part also has difference.If zones of different spreads and produces different square resistances on same battery sheet; Apply a forward voltage on battery sheet surface again; (resistivity is low then to spread the little place of square resistance; Current density is big) the electroluminescence strength ratio is bigger, the place that phase back-diffusion square resistance is big (resistivity is high, and current density is little) electroluminescence intensity a little less than.In addition,, can indicate intuitively, make things convenient for adjusting system to the side-play amount of electrode printing through being provided with a plurality of and anterior layer pattern contour distance between centers of tracks different detection pattern.
Description of drawings
Fig. 1 is the battery chip architecture sketch map that the embodiment of the invention obtains;
Fig. 2 is the local structure for amplifying sketch map of the A of Fig. 1;
Fig. 3 is battery plate electrode printing that the embodiment of the invention the obtains local structure for amplifying sketch map when skew takes place.
Embodiment
The silk screen printing chromatography aim detecting method of the solar cell plate electrode of the embodiment of the invention may further comprise the steps:
A. the manufacturing of battery sheet; On silicon chip substrate 1, form the lower preceding layer pattern 2 of square resistance resistance; Outside anterior layer pattern contour scope, form the lower check pattern 4 of a plurality of square resistance resistances, then through method for printing screen chromatography front electrode 3 in preceding layer pattern 2 profile scopes; A plurality of check pattern 4 are divided into many groups, are distributed in the position (also can be distributed in other positions of silicon chip according to the requirement of aim detecting) near four bights of silicon chip.One section straight line outline line of layer patterns 2 is a benchmark before a plurality of check pattern 4 in same group, and each check pattern 4 in a group and this are as the arrangement that gradually changes of the shortest spacing between the outline line of benchmark.
B. silk screen printing chromatography aim detecting applies a voltage between front electrode 3 and silicon chip substrate 1, on infrared photograph, observes the brightness of check pattern 4, judges whether the front electrode printing squints; If other zones before the brightness ratio of check pattern 4 beyond the layer pattern 2 are high, judge that then skew has taken place in the electrode printing; Do not have significant difference if the brightness of check pattern 4 is compared with other zones beyond the preceding layer pattern 2, judge that then the electrode printing do not squint; According to the quantity of the brighter check pattern of brightness, judge the side-play amount of front electrode.
Its principle is:
After applying a voltage V between front electrode 3 and the silicon chip substrate 1, because square resistance is lower in the preceding layer pattern 2, so this regional current density is bigger, therefore corresponding electroluminescence intensity is bigger, and on infrared photograph, this zone is higher than other regional luminances;
If the front electrode of printing squints (like Fig. 2); Though this moment, check pattern had lower square resistance; But because front electrode 3 does not overlap with check pattern 4; So current density is lower, on infrared photograph, this zone is compared with the zone beyond the preceding layer pattern 2 does not have significant difference;
If skew (like Fig. 3) has taken place in the front electrode of printing; This moment, front electrode 3 had overlapping with check pattern 4; If be applied with voltage V at front electrode 3 and 1 of silicon chip substrate this moment, then on infrared photograph, can see that check pattern 4 and preceding layer pattern 2 are all brighter.In a plurality of check pattern 4 of same group,,, can judge the side-play amount of front electrode 3 according to the quantity of brightness higher detection pattern because each check pattern 4 is different with the spacing of anterior layer pattern contour line.
Claims (3)
1. the silk screen printing chromatography aim detecting method of a solar cell plate electrode is characterized in that: may further comprise the steps
A. the manufacturing of battery sheet; On silicon chip substrate 1, form the lower preceding layer pattern 2 of square resistance resistance; Outside anterior layer pattern contour scope, form the lower check pattern of at least one square resistance resistance 4, then through method for printing screen chromatography front electrode 3 in preceding layer pattern 2 profile scopes;
B. silk screen printing chromatography aim detecting applies a voltage between front electrode 3 and silicon chip substrate 1, on infrared photograph, observes the brightness of check pattern 4, judges whether the front electrode printing squints; If other zones before the brightness ratio of check pattern 4 beyond the layer pattern 2 are high, judge that then skew has taken place in the electrode printing; Do not have significant difference if the brightness of check pattern 4 is compared with other zones beyond the preceding layer pattern 2, judge that then the electrode printing do not squint.
2. the silk screen printing chromatography aim detecting method of solar cell plate electrode according to claim 1 is characterized in that: a plurality of check pattern 4 are set.
3. the silk screen printing chromatography aim detecting method of solar cell plate electrode according to claim 2; It is characterized in that: a plurality of check pattern 4 are divided at least one group; One section straight line outline line of layer patterns 2 is a benchmark before a plurality of check pattern 4 in same group, and each check pattern 4 in a group and this are as the arrangement that gradually changes of the shortest spacing between the outline line of benchmark; During silk screen printing chromatography aim detecting,, judge the side-play amount of front electrode 3 according to the quantity of brightness higher detection pattern 4.
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| CN201210322917.4A CN102810603B (en) | 2012-09-04 | 2012-09-04 | Screen printing overprinting alignment detection method for solar cell electrodes |
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| CN201210322917.4A CN102810603B (en) | 2012-09-04 | 2012-09-04 | Screen printing overprinting alignment detection method for solar cell electrodes |
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| CN102810603B CN102810603B (en) | 2015-04-22 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106370932A (en) * | 2016-11-17 | 2017-02-01 | 河北工业大学 | Thin silicon wafer resistivity test method and thin silicon wafer resistivity test system based on pseudo measurement method |
| CN111584387A (en) * | 2020-05-29 | 2020-08-25 | 长江存储科技有限责任公司 | Test structure, test method and semiconductor structure |
| CN113130339A (en) * | 2019-12-31 | 2021-07-16 | 苏州阿特斯阳光电力科技有限公司 | Monitoring method for deviation of electrode pattern on surface of solar cell |
| CN114300573A (en) * | 2021-11-25 | 2022-04-08 | 苏州腾晖光伏技术有限公司 | Method for optimizing back overprint offset monitoring during manufacturing of crystalline silicon solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100252102A1 (en) * | 2009-04-06 | 2010-10-07 | Armand Bettinelli | Method for printing a conductor in two superimposed layers by screen-printing |
| CN102101396A (en) * | 2010-11-19 | 2011-06-22 | 奥特斯维能源（太仓）有限公司 | Method for aligning metal grid line in solar cell metallization process |
| CN102347393A (en) * | 2010-08-02 | 2012-02-08 | 无锡尚德太阳能电力有限公司 | Alignment method and system for manufacturing film photovoltaic assembly |
-
2012
- 2012-09-04 CN CN201210322917.4A patent/CN102810603B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100252102A1 (en) * | 2009-04-06 | 2010-10-07 | Armand Bettinelli | Method for printing a conductor in two superimposed layers by screen-printing |
| CN102347393A (en) * | 2010-08-02 | 2012-02-08 | 无锡尚德太阳能电力有限公司 | Alignment method and system for manufacturing film photovoltaic assembly |
| CN102101396A (en) * | 2010-11-19 | 2011-06-22 | 奥特斯维能源（太仓）有限公司 | Method for aligning metal grid line in solar cell metallization process |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106370932A (en) * | 2016-11-17 | 2017-02-01 | 河北工业大学 | Thin silicon wafer resistivity test method and thin silicon wafer resistivity test system based on pseudo measurement method |
| CN106370932B (en) * | 2016-11-17 | 2023-04-21 | 河北工业大学 | Method and system for detecting resistivity of thin-layer silicon wafer based on pseudo-measurement value method |
| CN113130339A (en) * | 2019-12-31 | 2021-07-16 | 苏州阿特斯阳光电力科技有限公司 | Monitoring method for deviation of electrode pattern on surface of solar cell |
| CN111584387A (en) * | 2020-05-29 | 2020-08-25 | 长江存储科技有限责任公司 | Test structure, test method and semiconductor structure |
| CN111584387B (en) * | 2020-05-29 | 2021-03-19 | 长江存储科技有限责任公司 | Test structure, test method and semiconductor structure |
| CN114300573A (en) * | 2021-11-25 | 2022-04-08 | 苏州腾晖光伏技术有限公司 | Method for optimizing back overprint offset monitoring during manufacturing of crystalline silicon solar cell |
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| CN102810603B (en) | 2015-04-22 |
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Effective date of registration: 20211220 Address after: No.66 Daquan Road, Xinba Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee after: ZHENJINAG KLOCKNER-MOELLER ELECTRICAL SYSTEMS Co.,Ltd. Address before: No. 66, Xinzhong South Road, Xinba Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG DQ SOLAR CO.,LTD. |
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