CN102800621A - Method for forming embolism structure and semiconductor device - Google Patents
Method for forming embolism structure and semiconductor device Download PDFInfo
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- CN102800621A CN102800621A CN2011101366384A CN201110136638A CN102800621A CN 102800621 A CN102800621 A CN 102800621A CN 2011101366384 A CN2011101366384 A CN 2011101366384A CN 201110136638 A CN201110136638 A CN 201110136638A CN 102800621 A CN102800621 A CN 102800621A
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Abstract
The invention discloses a method for forming an embolism structure and a semiconductor device. The method for forming the embolism structure comprises the following steps of: providing a substrate; forming a first dielectric layer with a first embolism in the substrate; forming a second dielectric layer with a through hole in the surface consisting of the first dielectric layer and the first embolism, wherein the first embolism is exposed from the bottom of the through hole; forming a first conductive layer of which the surface is higher than the top surface of the first embolism in the through hole by an electroless plating method; and forming a second conductive layer in the through hole to cover the first conductive layer, wherein the surface of the second conductive layer is flush with the surface of the second dielectric layer, the first conductive layer and the second conductive layer form a second embolism, and the embolism structure comprises the first embolism and the second embolism. Due to the adoption of the technical scheme, the contact resistance between the first embolism and the second embolism can be reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the method that forms embolism structure, semiconductor device.
Background technology
In the semiconductor technology, utilize interconnection structure interface unit structure, the interconnection structure that wherein forms can be that embolism is connected with embolism, also can be that embolism is connected with interconnection line.
The method that forms embolism and stud interconnect in the prior art is:
With reference to figure 1, the semiconductor-based end 10, be provided, in this semiconductor-based end 10, form first dielectric layer 11, in first dielectric layer 11, be formed with first embolism 12.With reference to figure 2; Form second dielectric layer 13 on the surface of first dielectric layer 11 and first embolism 12; On said second dielectric layer 13, form patterned photoresist layer (not shown); Defining the position of through hole, is said second dielectric layer 13 of mask etching with patterned photoresist layer, in said second dielectric layer 13, forms through hole 14.Afterwards, with reference to figure 3, utilize physical vapour deposition (PVD) or electro-plating method filled conductive material in through hole 14 to form second embolism 15.
Along with development of semiconductor, the integrated level of integrated circuit is increasingly high, and (CD) is more and more littler for the characteristic size of device, and when therefore being easy to occur photoetching, etching formation through hole 14, the position of the position of through hole 14 and first embolism 12 misplaces.Because the position of through hole 14 misplaces; When utilizing physical vapour deposition (PVD) or electro-plating method filled conductive material to form second embolism 15; The real contact area of second embolism 15 and first embolism 12 reduces; Contact resistance between such first embolism 12 and second embolism 15 increases, and can cause the power consumption of semiconductor device big like this.
The method that many formation embolisms are arranged in the prior art, for example the application number of application on August 2nd, 2009 is China's application of 200910194781.1, disclosed " manufacturing approach of tungsten plug ", however all do not solve above-described technical problem.
Summary of the invention
The problem that the present invention solves is in the prior art because device feature size is more and more littler, causes interconnective embolism dislocation, and the contact resistance between interconnective two embolisms is increased.
For addressing the above problem, the present invention provides a kind of method that forms embolism structure, comprising:
Substrate is provided, forms first dielectric layer in the said substrate with first embolism;
On the surface of said first dielectric layer and first embolism composition, form second dielectric layer with through hole, said via bottoms exposes said first embolism;
Utilize electroless plating method in said through hole, to form first conductive layer that the surface exceeds the first embolism end face;
In said through hole, form second conductive layer; Cover said first conductive layer; And the surface of said second conductive layer is surperficial equal with said second dielectric layer, and said first conductive layer and second conductive layer constitute second embolism, and said embolism structure comprises said first embolism and second embolism.
Optional, the material of said first conductive layer is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.
Optional, the material of said second conductive layer is selected from copper or tungsten.
Optional, the method that forms second conductive layer is physical vapour deposition (PVD) or plating.
Optional, in said through hole, form second conductive layer, cover said first conductive layer, and surperficial equal the comprising of the surface of said second conductive layer and said second dielectric layer:
After forming first conductive layer, in said through hole, fill up second conductive layer, said second conductive layer exceeds said through hole;
Said second conductive layer of planarization is removed second conductive layer exceed said through hole, and the surface that makes said second conductive layer is surperficial equal with said second dielectric layer.
Optional, the method that on the said semiconductor-based end, forms second dielectric layer with through hole is:
On the said semiconductor-based end, form second dielectric layer;
On said second dielectric layer, form photoresist layer;
Exposure, the said photoresist layer that develops form patterned photoresist layer, define the position of through hole;
With said patterned photoresist layer is that said second dielectric layer of mask etching forms through hole.
Optional, the material of said first dielectric layer, second dielectric layer is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, ultralow k material one of them or they.
Optional, said low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.
Optional, said ultralow k material is a black diamond.
The present invention also provides a kind of method that forms semiconductor device, comprising: form embolism structure with above-described method.
Compared with prior art, the present invention has the following advantages:
The present technique scheme utilize electroless plating method no matter the shape of object how all can form the characteristic of uniform thin layer in object surfaces, in via bottoms, form first conductive layer.Because in the prior art; Location dislocation between first embolism and the through hole; Therefore when etching second dielectric layer forms through hole, first dielectric layer under the position of through hole dislocation has also been carried out etching, the surface that through hole is exposed comprises part and the sidewall sections that exposes the first embolism end face.Therefore; First conductive layer that forms with electroless plating method can be formed on all surface of first embolism that via bottoms exposes; Promptly expose the summit portion and the sidewall sections of said first embolism; Make the contact area of first embolism and second embolism increase the contact portion of sidewall; Enlarge the contact area of second embolism and first embolism, reduced the contact resistance of first embolism and second embolism, overcome the big problem of contact resistance that upper surface that electric conducting material in the prior art basically only is formed on first embolism causes first embolism and second embolism.
Description of drawings
Fig. 1～3rd, the cross-sectional view of the formation embolism of prior art and the method for stud interconnect;
Fig. 4 is the schematic flow sheet of method of the formation embolism structure of the specific embodiment of the invention;
Fig. 5～Fig. 8 is the cross-sectional view of embolism structure method of the formation of the specific embodiment of the invention.
Embodiment
For the contact resistance that improves embolism and embolism in the prior art increases the big problem of power consumption that makes device, the inventor is through conscientious research, with reference to figure 2; When finding that etching forms through hole 14, because the position of through hole 14 misplaces, so during etching formation through hole 14; First dielectric layer 11 that through hole 14 is staggered below first embolism, 12 positions has carried out etching, in the formation of embolism 12 sides opening 16, the bottom of through hole 14 is exactly irregular like this; It comprises two parts; Be respectively part that exposes first embolism, 12 end faces and the part that exposes first embolism, 12 sidewalls, when the filled conductive material formed second embolism 15 in through hole 14, electric conducting material is basic in the prior art only contacted with the part of first embolism, 12 end faces; Part that can not filling opening 16; If can adopt also filled conductive material of part that additive method makes opening 16, first embolism 12 will increase with the area that second embolism 15 contacts so, and therefore both contact resistances also can reduce.
The present technique scheme utilize electroless plating method no matter the shape of object how all can form the characteristic of uniform thin layer in object surfaces, in via bottoms, form first conductive layer.Because in the prior art; Location dislocation between first embolism and the through hole; Therefore when etching second dielectric layer forms through hole, second dielectric layer under the position of through hole dislocation has also been carried out etching, the surface that through hole is exposed comprises part and the sidewall sections that exposes the first embolism end face.Therefore; First conductive layer that forms with electroless plating method can be formed on all surface of first embolism that via bottoms exposes; Promptly expose the summit portion and the sidewall sections of said first embolism; Make the contact area of first embolism and second embolism increase the contact portion of sidewall; Enlarge the contact area of second embolism and first embolism, reduced the contact resistance of first embolism and second embolism, overcome the big problem of contact resistance that upper surface that electric conducting material in the prior art basically only is formed on first embolism causes first embolism and second embolism.
Fig. 4 is the flow chart of method of the formation embolism structure of the specific embodiment of the invention, and with reference to figure 4, the method for the formation embolism structure of the specific embodiment of the invention comprises:
Step S41 provides substrate, in said substrate, is formed with first dielectric layer with first embolism;
Step S42 forms second dielectric layer with through hole on the surface of said first dielectric layer and first embolism composition, said via bottoms exposes said first embolism;
Step S43 utilizes electroless plating method in said through hole, to form first conductive layer that the surface exceeds the first embolism end face;
Step S44; In said through hole, form second conductive layer; Cover said first conductive layer; And the surface of said second conductive layer is surperficial equal with said second dielectric layer, and said first conductive layer and second conductive layer constitute second embolism, and said embolism structure comprises said first embolism and second embolism.
Fig. 5～Fig. 8 is the cross-sectional view of embolism structure method of the formation of the specific embodiment of the invention, in conjunction with the method that specifies the formation embolism structure of the specific embodiment of the invention with reference to figure 4 and Fig. 5～Fig. 8.
In conjunction with reference to figure 4 and Fig. 5, execution in step S41 provides substrate 50, in said substrate 50, is formed with first dielectric layer 51 with first embolism 52.In the specific embodiment of the invention, substrate 50 can be accomplished the substrate that provides afterwards by semiconductor FEOL (FEOL); Also can proceed the substrate that provides in semiconductor rear section technology (BEOL) process for after semiconductor FEOL (FEOL) completion.The material of substrate 50 can be monocrystalline silicon or single-crystal silicon Germanium, perhaps monocrystalline carbon doped silicon; The material that perhaps can also comprise other, for example III-V compounds of group such as GaAs.Be formed with device architecture at said the semiconductor-based end 50; This device architecture can be the device architecture that forms in the semiconductor FEOL; For example MOS transistor also can be the device architecture that forms in the last part technology (FEOL), for example comprises the interconnection structure of embolism and interconnection line.Wherein first embolism 52 is used for connecting the device architecture that forms at semiconductor-based the end 50.The material of first dielectric layer 51 is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, ultralow k material one of them or they.Low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.Ultralow k material can be black diamond, also can be for well known to a person skilled in the art other materials.
In conjunction with reference to figure 4 and Fig. 6, execution in step S42 forms second dielectric layer 53 with through hole 54 on the surface that said first dielectric layer 51 and first embolism 52 are formed.Method forming second dielectric layer with through hole in the said substrate is: on the surface of said first dielectric layer 51 and first embolism, 52 compositions, form second dielectric layer 53; On said second dielectric layer 53, form the photoresist layer (not shown); Exposure, the said photoresist layer that develops form patterned photoresist layer, define the position of through hole; With patterned photoresist layer is that said second dielectric layer 53 of mask etching forms through hole 54.The material of said second dielectric layer 53 is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, ultralow k material one of them or they.Said low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.Said ultralow k material is a black diamond.The method of said second dielectric layer 53 of etching is a dry etching.
Along with development of semiconductor; The integrated level of integrated circuit is increasingly high; (CD) is more and more littler for the characteristic size of device, and when therefore utilizing photoetching, etching formation through hole 54, the position of the position of through hole 54 and first embolism 52 misplaces; Be that through hole 54 offsets to one side, cause the through hole 54 and first embolism 52 not to aim at.Because the position of through hole 53 misplaces; Therefore when etching formed through hole 54, first dielectric layer 51 that through hole 54 is staggered below the position of first embolism 52 had carried out etching, in the formation of first embolism, 52 sides opening 56; The bottom of through hole 54 is exactly irregular like this; It comprises two parts, is respectively part that exposes first embolism, 52 end faces and the part that exposes first embolism, 52 sidewalls, and promptly said through hole 54 bottom-exposed go out the end face and the partial sidewall of said first embolism 52.
In conjunction with reference to figure 4 and Fig. 7, execution in step S43 utilizes electroless plating method in said through hole 54, to form first conductive layer 55 that the surface exceeds first embolism, 52 end faces.Need not feed electric current and be based on the plating that reduction chemically realizes and be commonly referred to electroless plating.Electroless plating has following characteristics: 1, need supply power unlike the metallide that kind, and no matter plating piece why shape all can obtain uniform film; 2, can obtain to meet the film of instructions for use through adjustment plating condition.Based on the characteristics of electroless plating method, the present invention utilizes electroless plating method to form first conductive layer 55, the end face and the partial sidewall of first embolism 52 that said through hole 54 bottom-exposed of these first conductive layer, 55 coverings go out; And said first conductive layer 55 fills up said opening 56, makes the surface of first conductive layer 55 exceed the upper surface of first embolism 52.In the specific embodiment of the invention, the material of said first conductive layer 55 is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.Certainly, among the present invention, the material of first conductive layer 55 is not limited to cobalt tungsten phosphorus or cobalt molybdenum phosphorus, also can be other materials that can form with electroless plating method.Wherein, the surface of first embolism 52 comprises two parts, is respectively end face and side, and the bottom surface of first embolism 52 is the surface that contacts with substrate 50, and end face is and the bottom surface facing surfaces that the side is the surface that opening 56 exposes.
The surface of first conductive layer 55 should exceed the end face of first embolism 52, can guarantee that so just when follow-up formation second conductive layer, second conductive layer can fully contact with first conductive layer 55.
In conjunction with reference to figure 4 and Fig. 8; Execution in step S44; In said through hole 53, form second conductive layer 57, cover said first conductive layer 55, and the surface of said second conductive layer 57 and said second dielectric layer 53 is surperficial equal; Said first conductive layer 55 and second conductive layer 57 constitute second embolism, and said embolism structure comprises said first embolism 52 and second embolism.Because first embolism 52 and second embolism carry out conducting through being in contact with one another between the two; Therefore first conductive layer 55 is formed on end face and the partial sidewall that said first embolism 52 exposes; Enlarged the contact area of second embolism and first embolism 52; Reduce the contact resistance of first embolism 52 and second embolism, overcome the big problem of contact resistance that upper surface that electric conducting material in the prior art basically only is formed on first embolism 52 causes first embolism 52 and second embolism.
Need to prove that " equal " among the present invention also do not mean that the surface of second conductive layer 57 is equal fully with the surface of second dielectric layer 53, but allow equal in certain error range.
In the specific embodiment of the invention, the material of second conductive layer 57 is selected from copper or tungsten.The method that forms second conductive layer 57 is physical vapour deposition (PVD) or electroplates; In said through hole 54, form second conductive layer 57; Cover said first conductive layer 55; And surperficial equal the comprising of the surface of said second conductive layer 57 and said second dielectric layer 53: after forming first conductive layer 55, in said through hole 54, fill up second conductive layer 57, said second conductive layer 57 exceeds said through hole 54; Said second conductive layer 57 of planarization is removed second conductive layer 57 exceed said through hole 54, and the surface that makes said second conductive layer 57 is surperficial equal with said second dielectric layer 53.
Form after the above-described embolism structure, can on second dielectric layer 53, continue to form the device of other structures, perhaps continue to form embolism structure.
Based on the method for above-described formation embolism structure, the present invention also provides a kind of method that forms semiconductor device, and this method comprises: form embolism structure with above-described method.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (10)
1. a method that forms embolism structure is characterized in that, comprising:
Substrate is provided, in said substrate, is formed with first dielectric layer with first embolism;
On the surface of said first dielectric layer and first embolism composition, form second dielectric layer with through hole, said via bottoms exposes said first embolism;
Utilize electroless plating method in said through hole, to form first conductive layer that the surface exceeds the first embolism end face;
In said through hole, form second conductive layer; Cover said first conductive layer; And the surface of said second conductive layer is surperficial equal with said second dielectric layer, and said first conductive layer and second conductive layer constitute second embolism, and said embolism structure comprises said first embolism and second embolism.
2. the method for formation embolism structure as claimed in claim 1 is characterized in that, the material of said first conductive layer is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.
3. the method for formation embolism structure as claimed in claim 1 is characterized in that, the material of said second conductive layer is selected from copper or tungsten.
4. the method for formation embolism structure as claimed in claim 3 is characterized in that, the method that forms second conductive layer is physical vapour deposition (PVD) or plating.
5. the method for formation embolism structure as claimed in claim 4 is characterized in that, in said through hole, forms second conductive layer, covers said first conductive layer, and surperficial equal the comprising of the surface of said second conductive layer and said second dielectric layer:
After forming first conductive layer, in said through hole, fill up second conductive layer, said second conductive layer exceeds said through hole;
Said second conductive layer of planarization is removed second conductive layer exceed said through hole, and the surface that makes said second conductive layer is surperficial equal with said second dielectric layer.
6. the method for formation embolism structure as claimed in claim 1 is characterized in that, the method that on the said semiconductor-based end, forms second dielectric layer with through hole is:
On the said semiconductor-based end, form second dielectric layer;
On said second dielectric layer, form photoresist layer;
Exposure, the said photoresist layer that develops form patterned photoresist layer, define the position of through hole;
With said patterned photoresist layer is that said second dielectric layer of mask etching forms through hole.
7. the method for formation embolism structure as claimed in claim 6 is characterized in that, the material of said first dielectric layer, second dielectric layer is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, ultralow k material one of them or they.
8. the method for formation embolism structure as claimed in claim 7 is characterized in that, said low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.
9. the method for formation embolism structure as claimed in claim 7 is characterized in that, said ultralow k material is a black diamond.
10. a method that forms semiconductor device is characterized in that, comprising: form embolism structure with each described method of claim 1～9.
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| CN201110136638.4A CN102800621B (en) | 2011-05-25 | 2011-05-25 | Method for forming embolism structure and semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609431A (en) * | 2014-10-28 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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| US20030113996A1 (en) * | 2000-10-13 | 2003-06-19 | Takeshi Nogami | Semiconductor production device and production method for semiconductor device |
| US20060246217A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Electroless deposition process on a silicide contact |
| CN1901202A (en) * | 2005-07-20 | 2007-01-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and forming method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030113996A1 (en) * | 2000-10-13 | 2003-06-19 | Takeshi Nogami | Semiconductor production device and production method for semiconductor device |
| US20060246217A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Electroless deposition process on a silicide contact |
| CN1901202A (en) * | 2005-07-20 | 2007-01-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and forming method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609431A (en) * | 2014-10-28 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN105609431B (en) * | 2014-10-28 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
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