CN102789978B - Production process of ordinary electric rectifier diode chip - Google Patents
Production process of ordinary electric rectifier diode chip Download PDFInfo
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- CN102789978B CN102789978B CN201210262683.9A CN201210262683A CN102789978B CN 102789978 B CN102789978 B CN 102789978B CN 201210262683 A CN201210262683 A CN 201210262683A CN 102789978 B CN102789978 B CN 102789978B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- 238000004073 vulcanization Methods 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 238000004806 packaging method and process Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 4
- 238000000465 moulding Methods 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000084 colloidal system Substances 0.000 claims description 7
- -1 molybdenum aluminium silicon phase alloy Chemical class 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000012022 requirements testing Methods 0.000 claims description 4
- 239000005030 aluminium foil Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 4
- 239000011888 foil Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008520 organization Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a whole set of production process of an ordinary electric rectifier diode chip. From the beginning to the end, the whole production process comprises the steps of wire cutting, washing, vacuum sintering, vacuum evaporation and vacuum microalloying, black rubber protection, angle lapping, acid corrosion, rubber protection, room temperature vulcanization, high temperature solidification, detection and packaging. A washed monocrystalline silicon piece is in the following multi-layer structure which is sequentially provided with a molybdenum piece, aluminum foil and a monocrystalline silicon piece from bottom to top, the vacuum sintering is carried out in a sintering furnace, and then an aluminum film is evaporated onto the whole monocrystalline silicon piece; and the angle lapping is carried out in a multi-angle matched grinding process. The production process disclosed by the invention has the advantages that a chip with a novel structure is produced, and the table board modeling mode of a single angle table board of the conventional electric rectifier diode chip is broken through. The new application technology of the multi-angle matched grinding process enables the table board of the chip to have a more perfect multi-angle table board model. The capacity of bearing higher working voltage of the electric rectifier diode chip is effectively improved.
Description
Technical field
The present invention relates to a kind of production technology of semiconductor components and devices, specifically a kind of production technology of ordinary electric rectifier diode chip.
Background technology
The semiconductor components and devices of rectifying tube to be a kind of by AC conversion the be Rectified alternating current of single direction.The multiplex single crystal of semiconductor material silicon of chip in rectifying tube manufactures.Conventional power rectifier diode has unilateral conduction, usually utilizes its unilateral conduction, play rectification and protective effect to circuit in operating circuit.ZP series conventional power rectifier diode is widely used in electric power, building, metallurgical, the industries such as national defence, such as: state-owned large-scale power and mining equipment, and electric welding machine, boat excitation, the traction etc. of large-scale power locomotive.
The chip table of tradition conventional power rectifier diode mostly is the table top moulding of single angle, more difficult impact of bearing more high working voltage, constrains high pressure, the manufacture of big current ZP chip and development.The appearance of multi-angle collocation grinding technics application technology, makes chip table have more perfectly multi-angle table top moulding, increase effectively the ability that power rectifier die carries more high working voltage.Breach the manufacture bottleneck of high pressure, big current ZP chip completely.
The production technology of ZP series compression joint type conventional power rectifier diode high-voltage chip comprises the steps:
1, silicon single crystal diffusion sheet wire cutting machine cuts, and cuts into the circular geometry cell cube of required rule.Geometric units body diameter is generally between 6mm ~ 100mm.
2, cut later chip thinning cleaning, made chip surface clean.
3, clean later chip and carry out vacuum-sintering.
4, black glue protection.By on black glue even application to the cathode plane and anode surface of chip, protect molybdenum sheet and aluminium film, in order to avoid corrode bad molybdenum sheet and aluminium film in follow-up corrosion process.
5, angle lap.The method that tradition adopts is tapered slope or the cambered surface (being referred to as the table top moulding of chip) of within one week, grinding out certain angle and width along circular chip edge, thus makes chip have certain puncture voltage.
Existing angle lap mode be all adopt manual angle lap mode, namely with hand by chip by being pressed on bevelling post, bevelling post is by driven by motor synchronous rotary, and hand-guided makes the edge of silicon chip grind the angle (i.e. the table top moulding of chip) of needs.
6, acid corrosion.Under certain condition, chip is placed in mixed acid solution and soaks, make chip table moulding level and smooth, without corner angle.Thus eliminate chip table damage and stain, make chip geometry table top clean level and smooth, reduce the impact of chip table surface field.
7, colloid protection is geometry table top and the electric insulation of protect IC cleaning;
8, room temperature vulcanization.Protecting glue room temperature vulcanization 8-12 hour (special colloid, room temperature vulcanization time meeting proper extension).
9, hot setting.Chip week after room temperature vulcanization goes in baking oven dries, and baking time is 72 hours, temperature 190 degree.
10, packaging is detected, according to electrical requirements testing classification, packaging.
The manufacturing process comparatively backwardness of traditional ordinary electric rectifier diode chip, the rectifier diode voltage bearing capacity produced is not high, and variety protection is single, and range of application is narrow.Chip Thermal fatigue properties is poor, and outward appearance resolution is not high.Therefore be necessary to carry out improvement and optimum organization to the manufacturing process of existing ordinary electric rectifier diode chip.
Summary of the invention
The technical problem to be solved in the present invention is the manufacturing process that optimum organization goes out a set of more advanced ordinary electric rectifier diode chip.
The present invention solves the problems of the technologies described above by the following technical solutions: a kind of production technology of ordinary electric rectifier diode chip, comprises the steps:
Step 1, silicon single crystal diffusion sheet wire cutting machine cut, and cut into the circular geometry cell cube of required rule;
Step 2, cut later silicon chip and carry out thinning cleaning;
Step 3, vacuum-sintering, vacuum evaporation and vacuum microalloy;
Step 4, black glue are protected, and by black glue even application to the cathode plane and anode surface of chip, protect molybdenum sheet and aluminium film;
Step 5, angle lap, grind out required chip table moulding with bevelling post chip;
Step 6, acid corrosion, under certain condition, be placed on chip in mixed acid solution and soak, and makes chip table moulding level and smooth, without corner angle;
The protection of step 7, colloid is geometry table top and the electric insulation of protect IC cleaning;
Step 8, room temperature vulcanization, protecting glue room temperature vulcanization 8-12 hour;
Step 9, hot setting, the chip week after room temperature vulcanization goes in baking oven dries, and baking time is 72 hours, temperature 190 degree;
Step 10, detection packaging, according to electrical requirements testing classification, packaging;
The concrete steps of described step 3 comprise:
Wherein clean later monocrystalline silicon piece, be followed successively by from bottom to up according to following sandwich construction: molybdenum sheet, aluminium foil, monocrystalline silicon piece, vacuum-sintering is carried out in sintering furnace, anode surface is made to form molybdenum aluminium silicon phase alloy, between sintering temperature 660 degree to 680 degree, 30 minutes time, then by aluminium film evaporation on whole monocrystalline silicon piece cathode plane, by vacuum microalloy, cathode plane is made to form aluminium silicon phase alloy.
The angle lap mode of described step 5 adopts the technique of multi-angle collocation grinding, first use the cone mill hornwork of an angle that chip is ground out the first inclined-plane, and then use the cone mill hornwork of another angle to grind out the second inclined-plane on the upper edge on the first inclined-plane, finally use pot mill hornwork to grind out auxiliary arcwall face in the junction on the first inclined-plane and the second inclined-plane, the first inclined-plane, the second inclined-plane and auxiliary arcwall face consist of the table top moulding of chip.
Described cone mill hornwork comprises bevelling post cylinder, and the top of described bevelling post cylinder offers angle lap groove, and described angle lap groove has the abradant surface of conical inclined surface.
Described pot mill hornwork comprises bevelling post cylinder, and the top of described bevelling post cylinder offers angle lap groove, and described angle lap groove has spherical abradant surface.
The present invention is optimized for further: the below of the cylinder of described cone mill hornwork offers axial location hole; The below of the cylinder of described pot mill hornwork offers axial location hole.
The present invention is optimized for further: the gluing in described step 7 is colored blue colloid on the table top of chip.
The invention has the advantages that: the chip structure of multilayer compression joint type then instead of the traditional welded structure of conventional power rectifier tube chip, and due to the existence of compression joint type sandwich construction, solve the thermal fatigue problem of power rectifier die, rectifier tube chip electric leakage is little, on-state voltage drop is little, functional; Breach the table top model form of traditional single angle of power rectifier die table top, the appearance of multi-angle collocation grinding technics new opplication technology, make chip table have more perfectly multi-angle table top moulding, effectively improve the ability that power rectifier die carries more high working voltage.
Embodiment
A production technology for the ordinary electric rectifier diode chip of improvement, comprises the steps:
Step 1, silicon single crystal diffusion sheet wire cutting machine cut, and cut into the circular geometry cell cube of required rule.
Step 2, cut the cleaning of later chip thinning, made chip surface clean;
Step 3, chip compression joint type Rotating fields, refer to shown in Fig. 1, vacuum-sintering.Chip cleaning is followed successively by according to following sandwich construction later from bottom to up: molybdenum sheet 1, aluminium foil 2, monocrystalline silicon piece 3, vacuum-sintering in sintering furnace, makes anode surface form molybdenum aluminium silicon phase alloy.Between sintering temperature 660 degree to 680 degree, 30 minutes time, vacuum evaporation and vacuum microalloy, by aluminium film 4 evaporation on whole monocrystalline silicon piece cathode plane, vacuum microalloy makes chip cathode plane form aluminium silicon phase alloy, the chip structure of multilayer compression joint type then instead of the traditional welded structure of conventional power rectifier tube chip, and due to the existence of compression joint type sandwich construction, solves the thermal fatigue problem of power rectifier die, rectifier tube chip electric leakage is little, on-state voltage drop is little, functional;
Step 4, black glue are protected.By on black glue even application to the cathode plane and anode surface of chip, protect molybdenum sheet and aluminium film, in order to avoid corrode bad molybdenum sheet and aluminium film in follow-up corrosion process;
Step 5, angle lap, the present invention adopts the technique of multi-angle collocation grinding.Refer to shown in Fig. 2, chip 10 one-tenth is cylindric, first use cone mill hornwork as shown in Figure 3 that the edge grinding of chip 10 is gone out the first inclined-plane 12, re-use cone mill hornwork and grind out the second inclined-plane 14 along edge on the first inclined-plane of chip 10, finally use pot mill hornwork as shown in Figure 4 to grind out auxiliary circle cambered surface 16 on the first inclined-plane of chip 10 and the junction on the second inclined-plane; First inclined-plane 14, inclined-plane 12, second, auxiliary circle cambered surface 16, the multi-angle table top moulding of compositing chip 10;
Described cone mill hornwork comprises bevelling post cylinder 20, the top of described bevelling post cylinder 20 offers angle lap groove 24, described angle lap groove 24 has the abradant surface 242 of taper, the below of described bevelling post cylinder 20 offers axial location hole (not shown), and axial location hole is used to be fixed on by bevelling post in the rotating shaft of motor (not shown).After motor work, can synchronously rotate by driving bevelling post cylinder 20.Grind chip in the slope by being pressed on the taper abradant surface 242 of bevelling post with hand by needing, bevelling post is by motor driven rotary, and hand-guided can make the edge of chip grind angle and the width (being the table top moulding of chip) of needs;
Described pot mill hornwork comprises: bevelling post cylinder 30, the top of described bevelling post cylinder 30 offers angle lap groove 34, described angle lap groove 34 has spherical abradant surface 342, the below of described bevelling post cylinder 30 offers axial location hole (not shown), and axial location hole is used to be fixed on by bevelling post in the rotating shaft of motor (not shown).After motor work, bevelling post cylinder 30 can be driven to synchronously rotate.Grind chip in the slope by being pressed on the spherical grinding face 342 of bevelling post with hand by needing, bevelling post is by motor driven rotary, and hand-guided can make the edge of chip grind angle and the width (being the table top moulding of chip) of needs;
The application of different angles collocation grinding technics new technology, makes chip table moulding be the moulding of multi-angle table top by original single angle change.Thus make power rectifier die have the ability of the higher reverse breakdown voltage of carrying.
Step 6, acid corrosion.Under certain condition, chip is placed in mixed acid solution and soaks, make chip table moulding level and smooth, without corner angle.Thus eliminate chip table damage and stain, make chip geometry table top clean level and smooth, reduce the impact of chip table surface field;
The protection of step 7, exclusive blue gel is geometry table top and the electric insulation of protect IC cleaning, and chip table, due to the protection of exclusive blue gel, makes product have very high resolution and anti-fake effect;
Step 8, room temperature vulcanization.Protecting glue room temperature vulcanization 8-12 hour (special colloid, room temperature vulcanization time meeting proper extension).
Step 9, hot setting.Chip week after room temperature vulcanization goes in baking oven dries, and baking time is 72 hours, temperature 190 degree.
Step 10, detection packaging, according to electrical requirements testing classification, packaging.
The foregoing is only the preferred embodiment of the invention; not in order to limit the invention; the any amendment done within all spirit in the invention and principle, equivalently to replace and improvement etc., within the protection range that all should be included in the invention.
Claims (3)
1. a production technology for ordinary electric rectifier diode chip, comprises the steps:
Step 1, silicon single crystal diffusion sheet wire cutting machine cut, and cut into the circular geometry cell cube of required rule;
Step 2, cut later silicon chip and carry out thinning cleaning;
Step 3, vacuum-sintering, vacuum evaporation and vacuum microalloy;
Step 4, black glue are protected, and by black glue even application to the cathode plane and anode surface of chip, protect molybdenum sheet and aluminium film;
Step 5, angle lap, grind out required chip table moulding with bevelling post chip;
Step 6, acid corrosion, under certain condition, be placed on chip in mixed acid solution and soak, and makes chip table moulding level and smooth, without corner angle;
The protection of step 7, colloid is geometry table top and the electric insulation of protect IC cleaning;
Step 8, room temperature vulcanization, protecting glue room temperature vulcanization 8-12 hour;
Step 9, hot setting, the chip week after room temperature vulcanization goes in baking oven dries, and baking time is 72 hours, temperature 190 degree;
Step 10, detection packaging, according to electrical requirements testing classification, packaging;
The concrete steps of described step 3 comprise:
Wherein clean later monocrystalline silicon piece, be followed successively by from bottom to up according to following sandwich construction: molybdenum sheet, aluminium foil, monocrystalline silicon piece, vacuum-sintering is carried out in sintering furnace, anode surface is made to form molybdenum aluminium silicon phase alloy, between sintering temperature 660 degree to 680 degree, 30 minutes time, then by aluminium film evaporation on whole monocrystalline silicon piece cathode plane, by vacuum microalloy, cathode plane is made to form aluminium silicon phase alloy;
The angle lap mode of described step 5 adopts the technique of multi-angle collocation grinding, first use the cone mill hornwork of an angle that chip is ground out the first inclined-plane, and then use the cone mill hornwork of another angle to grind out the second inclined-plane on the upper edge on the first inclined-plane, finally use pot mill hornwork to grind out auxiliary arcwall face in the junction on the first inclined-plane and the second inclined-plane, the first inclined-plane, the second inclined-plane and auxiliary arcwall face consist of the table top moulding of chip;
Described cone mill hornwork comprises bevelling post cylinder, and the top of described bevelling post cylinder offers angle lap groove, and described angle lap groove has the abradant surface of conical inclined surface;
Described pot mill hornwork comprises bevelling post cylinder, and the top of described bevelling post cylinder offers angle lap groove, and described angle lap groove has spherical abradant surface.
2. the production technology of ordinary electric rectifier diode chip as claimed in claim 1, is characterized in that: the below of the cylinder of described cone mill hornwork offers axial location hole; The below of the cylinder of described pot mill hornwork offers axial location hole.
3. the production technology of ordinary electric rectifier diode chip as claimed in claim 1 or 2, is characterized in that: the gluing in described step 7 is colored blue colloid on the table top of chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210262683.9A CN102789978B (en) | 2012-07-26 | 2012-07-26 | Production process of ordinary electric rectifier diode chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210262683.9A CN102789978B (en) | 2012-07-26 | 2012-07-26 | Production process of ordinary electric rectifier diode chip |
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| CN102789978A CN102789978A (en) | 2012-11-21 |
| CN102789978B true CN102789978B (en) | 2015-06-10 |
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| CN103700740B (en) * | 2014-01-10 | 2016-04-13 | 黄山市弘泰电子有限公司 | A kind of manufacture method of thyristor chip |
| CN104241122B (en) * | 2014-09-29 | 2017-05-10 | 广安市嘉乐电子科技有限公司 | Production method for sheet silicon-particle rectifier diodes |
| CN106067419A (en) * | 2016-08-22 | 2016-11-02 | 成都众乐泰科技有限公司 | A kind of optimized production process of diode |
| CN106252245A (en) * | 2016-09-29 | 2016-12-21 | 黄山市七七七电子有限公司 | The manufacturing process of high-reliability high power semiconductor modular chip |
| CN109735227B (en) * | 2019-01-22 | 2021-04-09 | 黄山市七七七电子有限公司 | Environment-friendly crimping type silicon chip corrosion shielding protection material and production process thereof |
| CN114050108B (en) * | 2021-09-23 | 2023-03-24 | 黄山市七七七电子有限公司 | Production process of silicon rectifying circular chip with built-in table top by acid etching |
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| CN1062239A (en) * | 1991-07-10 | 1992-06-24 | 吉林大学 | A kind of sintering process of bidirectional thyristor |
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Denomination of invention: Production Process of General Power Rectifier Diode Chip Effective date of registration: 20221101 Granted publication date: 20150610 Pledgee: Qimen Anhui rural commercial bank Limited by Share Ltd. Pledgor: HUANGSHAN 777 ELECTRONICS CO.,LTD. Registration number: Y2022110000295 |
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Date of cancellation: 20231115 Granted publication date: 20150610 Pledgee: Qimen Anhui rural commercial bank Limited by Share Ltd. Pledgor: HUANGSHAN 777 ELECTRONICS CO.,LTD. Registration number: Y2022110000295 |