CN102779914A - Vertical light-emitting diode with current blocking effect and manufacturing method thereof - Google Patents
Vertical light-emitting diode with current blocking effect and manufacturing method thereof Download PDFInfo
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- CN102779914A CN102779914A CN2012102707499A CN201210270749A CN102779914A CN 102779914 A CN102779914 A CN 102779914A CN 2012102707499 A CN2012102707499 A CN 2012102707499A CN 201210270749 A CN201210270749 A CN 201210270749A CN 102779914 A CN102779914 A CN 102779914A
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Abstract
The invention discloses a vertical light-emitting diode with a current blocking effect and a manufacturing method thereof. The LED (light-emitting diode) structure comprises a permanent substrate, a p type GaN base epitaxial layer, a light-emitting layer, an n type GaN base epitaxial layer, an n electrode and a laser ablation part, wherein the p type GaN base epitaxial layer is positioned above the permanent substrate; the light-emitting layer is positioned above the p type GaN base epitaxial layer; the n type GaN base epitaxial layer is positioned above the light-emitting layer; the n electrode is positioned above the n type GaN base epitaxial layer; the laser ablation part is formed between the n type GaN base epitaxial layer and the light-emitting layer; and the laser ablation part on a vertical projection surface corresponds to the n electrode in position. A laser ablation area serving as a current blocking layer is formed between the n type GaN base epitaxial layer and the light-emitting layer through laser irradiation heat decomposition, so that current distribution is improved, and light absorption of the electrode is reduced.
Description
Technical field
The present invention relates to Light-emitting Diode And Its Making Method, more particularly, relate to a kind of vertical LED and preparation method thereof with current blocking effect.
Background technology
In recent years, vertical thin-film structure GaN base light emitting diode (LED) has become the new focus of research and development.Compare with conventional structure; Vertical stratification LED passes through substrate-transfer; Forming electrode distributes up and down; Current vertical is injected, solved in the conventional structure GaN base LED device because of electrode horizontal distribution, electric current laterally inject cause such as poor heat radiation, a series of problems such as CURRENT DISTRIBUTION inequality, poor reliability.
The n electrode of light emitting diode (LED) chip with vertical structure generally is positioned at the exiting surface top, and the light that active layer sends can blocked and absorb to its existence.In order to avoid the n electrode to block and absorb as far as possible, introduce current barrier layer usually in the inside of vertical chip with restriction or significantly reduce the luminous of active layer below the n electrode for luminous.For example, between p type epitaxial loayer and p type contact metal layer, insert insulating material (like silica, silicon nitride etc.) as current barrier layer, its size is roughly suitable with the n electrode with the position, can improve being in the light and extinction of n electrode greatly like this.Yet, not good as insulating material such as the silica of current barrier layer or silicon nitrides with the degree of sticking of p type contact metal layer, can influence the firmness of wafer bonding, thereby cause the reduction of substrate desquamation yield and influence reliability.
Summary of the invention
Main purpose of the present invention provides vertical LED with current blocking effect and preparation method thereof; Between n type GaN base epitaxial loayer and luminescent layer, form the laser ablation district through the laser irradiation thermal decomposition as current barrier layer; To improve CURRENT DISTRIBUTION, reduce the electrode extinction.
According to the vertical LED with current blocking effect of realizing above-mentioned purpose, its structure comprises: permanent substrate; P type GaN base epitaxial loayer is positioned on the said permanent substrate; Luminescent layer is positioned on the said p type GaN base epitaxial loayer; N type GaN base epitaxial loayer is positioned on the said luminescent layer; The n electrode is positioned on the n type GaN base epitaxial loayer; Laser ablation portion is formed between n type GaN base epitaxial loayer and the luminescent layer, and the position and the n electrode pair of laser ablation portion answered on vertical plane.
The vertical LED manufacture method with current blocking effect according to realizing above-mentioned purpose comprises step:
1) on a permanent substrate, form epitaxial loayer, it comprises n type GaN base epitaxial loayer, luminescent layer and p type GaN base epitaxial loayer from top to down;
2) adopt laser radiation part n type GaN base epitaxial loayer, between n type GaN base epitaxial loayer and luminescent layer, form a laser ablation portion;
3) manufacturing n electrode on n type GaN base epitaxial loayer, its position at vertical plane is corresponding with laser ablation portion.
The present invention adopts laser irradiation thermal decomposition mode between n type GaN base epitaxial loayer and luminescent layer, to form the laser ablation portion with current blocking effect.The luminescent layer surface is through the high energy pulse laser radiation and absorb its energy, thereby thermal decomposition can form a gap structure.The present invention introduces the space current barrier layer at the n of vertical GaN-based light-emitting diode end, can effectively avoid p end design insulating medium barrier layer for substrate bonding and the adverse effect of peeling off, and have higher reliability.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantages.
Description of drawings
Fig. 1 is the structural representation of the vertical LED with current blocking effect of the preferred embodiment of the present invention.
Fig. 2 ~ Fig. 7 is the vertical LED making step sketch map with current blocking effect of the preferred embodiment of the present invention.
Parts symbol description among the figure:
100: Sapphire Substrate
101: resilient coating
The 102:u-GaN layer
The 103:n-GaN layer
The 104:MQW layer
The 105:p-GaN layer
110: the space
200: silicon substrate
The 210:p reflecting electrode
220: metal laminated
The 230:p electrode
The 240A:n electrode pad
240B:n electrode expansion bar
The 300:Ni mask
310: laser irradiation region.
Embodiment:
To combine sketch map that LED structure of the present invention and preparation method thereof is described in more detail below; The preferred embodiments of the present invention have wherein been represented; Should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as limitation of the present invention.
Core concept of the present invention is: a kind of vertical LED with current blocking effect and preparation method thereof is provided; Between n type GaN base epitaxial loayer and luminescent layer, form the laser ablation district through the laser irradiation thermal decomposition as current barrier layer; To improve CURRENT DISTRIBUTION, reduce the electrode extinction.
Below each embodiment a kind of vertical LED with current blocking effect and preparation method thereof is disclosed, this LED structure comprises: permanent substrate; P type GaN base epitaxial loayer is positioned on the said permanent substrate; Luminescent layer is positioned on the said p type GaN base epitaxial loayer; N type GaN base epitaxial loayer is positioned on the said luminescent layer; The n electrode is positioned on the n type GaN base epitaxial loayer; Laser ablation portion is formed between n type GaN base epitaxial loayer and the luminescent layer, and the position and the n electrode pair of laser ablation portion answered on vertical plane.
Further, in conjunction with above-mentioned LED structure, the present invention also provides a kind of manufacturing approach, may further comprise the steps: 1) on a permanent substrate, form epitaxial loayer, it comprises n type GaN base epitaxial loayer, luminescent layer and p type GaN base epitaxial loayer from top to down; 2) adopt laser radiation part n type GaN base epitaxial loayer, between n type GaN base epitaxial loayer and luminescent layer, form a laser ablation portion; 3) manufacturing n electrode on n type GaN base epitaxial loayer; Wherein, the n electrode is corresponding with laser ablation portion in the position of vertical plane.
In some preferential embodiment, the permanent substrate material is selected from silicon, copper, nickel, cobalt, molybdenum, pottery, sapphire, gallium nitride, zinc oxide, aluminium nitride or its combination.
In some preferential embodiment, quite or identical at the position of the above laser ablation portion of vertical plane and size and n electrode.
In some preferred embodiments, said laser ablation portion is the gap structure that the luminescent layer material forms through the laser ablation thermal decomposition.
In certain embodiments, a kind of vertical LED with current blocking effect can be through following method preparation: interim substrate is provided, above that epitaxial growth n type GaN base epitaxial loayer, luminescent layer and p type GaN base epitaxial loayer successively; Permanent substrate is provided, with the epitaxial loayer of itself and above-mentioned interim substrate through the metal laminated adhesive bond of carrying out; Remove interim substrate, and expose n type GaN base epitaxial loayer; Adopt lithographic definition irradiated site and non-irradiated site, non-irradiated site mask film covering; Adopt the laser radiation irradiated site, the laser photon energy is between GaN and luminescent layer energy gap, and laser radiation causes the luminescent layer portion of hot of irradiated site to decompose, and between n type GaN base epitaxial loayer and luminescent layer, forms the space; The manufacturing n electrode, and make the n electrode quite perhaps identical with irradiated site in the position and the size of vertical plane.
Below in conjunction with accompanying drawing and preferred embodiment the present invention is described further.
[embodiment]
The vertical LED structure with current blocking effect shown in accompanying drawing 1 comprises silicon substrate 200, n-GaN layer 103, multiple quantum well active layer (MQW) 104, p-GaN layer 105, space 110, p reflecting electrode 210, metal laminated 220, p electrode 230, n electrode pad 240A and n electrode expansion bar.
Wherein, silicon substrate 200 has two first type surfaces, front and back; Metal laminated 220 are formed on the front of silicon substrate 200, and its structure is Cr/Pt/Au/Pt/Cr, thickness 50/50/1000/50/50nm; P reflecting electrode 210 is formed on metal laminated 220, and its material is Ag, thickness 200nm; P-GaN layer 105 is formed on the p reflecting electrode 210; Multiple quantum well active layer 104 is formed on the p-GaN layer 105, and its luminous dominant wavelength is 460nm; N-GaN layer 103 is formed on the multiple quantum well active layer 104; The n electrode comprises two parts, and n electrode pad 240A and n electrode expansion bar 240B are formed on the n-GaN layer 103; P electrode 230 is formed at the back side of silicon substrate 200; Expanding on the correspondence position of bar 240B vertical plane with n electrode pad 240A and n electrode; Also comprise space 110 and be formed between n-GaN layer 103 and the multiple quantum well active layer 104, and pore size and n electrode pad 240A and n electrode expansion bar 240B are similar.
Accompanying drawing 2 ~ 7th, the making step sketch map with current blocking effect vertical LED of said structure specifically comprises following step.
The first step: with reference to accompanying drawing 2, growing GaN base epitaxial loayer comprises successively on Sapphire Substrate 100; Resilient coating 101, u-GaN layer 102, n-GaN layer 103, multiple quantum well active layer 104 and p-GaN layer 105, wherein, the luminous dominant wavelength of multiple quantum well active layer 104 is 460nm.
Second step: with reference to accompanying drawing 3; On p-GaN layer 105, make p reflecting electrode 210, the reflecting electrode material is selected Ag, thickness 200nm; Bonded silica substrate 200 and Sapphire Substrate 100; Make front and the p reflecting electrode 210 of silicon substrate 200 through metal laminated 220 adhesive bond, wherein metal laminated 220 materials are Cr/Pt/Au/Pt/Cr, thickness 50/50/1000/50/50nm.
The 3rd step:, adopt the laser lift-off mode to remove Sapphire Substrate 100 with reference to accompanying drawing 4.
The 4th step:, adopt dry method or wet etching to remove resilient coating 101 and u-GaN layer 102, thereby expose n-GaN layer 103 with reference to accompanying drawing 5.
The 5th step: with reference to accompanying drawing 6, the plating layer of Ni is as mask 300 on n-GaN layer 103, and thickness 20nm adopts lithographic definition irradiated site 310, and the Ni mask 300 on the irradiated site is removed in etching; Adopt high energy pulse laser radiation irradiated site 300, optical maser wavelength is 380nm, and 103 irradiation of laser penetration n-GaN layer cause the ablated thermal decomposition in active layer 104 top layers of irradiated site 300, and between n-GaN layer 103 and active layer 104, form space 110.
The 6th step: with reference to accompanying drawing 7, manufacturing n electrode pad 240A and n electrode expansion bar 240B, and make n electrode pad 240A roughly suitable in the position and the size of vertical plane with space 110 with n electrode expansion bar 240B.
Claims (10)
1. have the vertical LED of current blocking effect, comprising:
Permanent substrate;
P type GaN base epitaxial loayer is positioned on the said permanent substrate;
Luminescent layer is positioned on the said p type GaN base epitaxial loayer;
N type GaN base epitaxial loayer is positioned on the said luminescent layer;
The n electrode is positioned on the n type GaN base epitaxial loayer;
Laser ablation portion is formed between n type GaN base epitaxial loayer and the luminescent layer, and the position and the n electrode pair of laser ablation portion answered on vertical plane.
2. the vertical LED with current blocking effect according to claim 1 is characterised in that: said laser ablation portion is a gap structure.
3. the vertical LED with current blocking effect according to claim 1 is characterised in that: said laser ablation portion is that the luminescent layer material forms through the laser ablation thermal decomposition.
4. the vertical LED with current blocking effect according to claim 1 is characterised in that: at the position of the above laser ablation portion of vertical plane and size and n electrode quite or identical.
5. the vertical LED with current blocking effect according to claim 1 is characterised in that: said permanent substrate material is selected from silicon, copper, nickel, cobalt, molybdenum, pottery, sapphire, gallium nitride, zinc oxide, aluminium nitride or its combination.
6. have its manufacture method of vertical LED of current blocking effect, comprise step:
1) on a permanent substrate, form epitaxial loayer, it comprises n type GaN base epitaxial loayer, luminescent layer and p type GaN base epitaxial loayer from top to down;
2) adopt laser radiation part n type GaN base epitaxial loayer, between n type GaN base epitaxial loayer and luminescent layer, form a laser ablation portion;
3) manufacturing n electrode on n type GaN base epitaxial loayer;
Wherein, the n electrode is corresponding with laser ablation portion in the position of vertical plane.
7. the vertical LED manufacture method with current blocking effect according to claim 6 is characterized in that said step 1) comprises:
Interim substrate is provided, epitaxial growth epitaxial loayer above that, it comprises n type GaN base epitaxial loayer, luminescent layer and p type GaN base epitaxial loayer;
Permanent substrate is provided, itself and above-mentioned epitaxial loayer are bondd;
Remove interim substrate, and expose n type GaN base epitaxial loayer.
8. the vertical LED manufacture method with current blocking effect according to claim 6 is characterized in that: said step 2) comprising:
On n type GaN base epitaxial loayer, define irradiated site, adopt the laser radiation irradiated site, laser radiation causes the luminescent layer portion of hot of irradiated site to decompose, and forms laser ablation portion at the interface of n type GaN base epitaxial loayer and luminescent layer.
9. the vertical LED manufacture method with current blocking effect according to claim 8 is characterized in that: said laser photon energy between n type GaN base epitaxial loayer and luminescent layer energy gap,
Vertical LED manufacture method with current blocking effect according to claim 9 is characterized in that: said laser ablation portion is a gap structure.
10. the vertical LED manufacture method with current blocking effect according to claim 6 is characterized in that: in the position of the above n electrode of vertical plane and size and said laser ablation portion quite or identical.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103346225A (en) * | 2013-06-21 | 2013-10-09 | 杭州格蓝丰纳米科技有限公司 | Vertical type graphene LED chip |
| CN104064642A (en) * | 2014-07-04 | 2014-09-24 | 映瑞光电科技(上海)有限公司 | Vertical type LED manufacturing method |
| CN104576841A (en) * | 2013-10-22 | 2015-04-29 | 璨圆光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| WO2017101520A1 (en) * | 2015-12-14 | 2017-06-22 | 厦门市三安光电科技有限公司 | Nitride bottom layer and manufacturing method therefor |
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| US20010040245A1 (en) * | 1998-05-28 | 2001-11-15 | Hiroji Kawai | Semiconductor device and its manufacturing method |
| CN101681961A (en) * | 2007-03-08 | 2010-03-24 | 克里公司 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
| CN101958378A (en) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | Quaternary vertical light-emitting diode (LED) with current blocking structure and preparation method thereof |
| US20120037952A1 (en) * | 2010-08-13 | 2012-02-16 | Lextar Electronics Corporation | Light emitting diode and fabricating method thereof |
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2012
- 2012-08-01 CN CN2012102707499A patent/CN102779914A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20010040245A1 (en) * | 1998-05-28 | 2001-11-15 | Hiroji Kawai | Semiconductor device and its manufacturing method |
| CN101681961A (en) * | 2007-03-08 | 2010-03-24 | 克里公司 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
| US20120037952A1 (en) * | 2010-08-13 | 2012-02-16 | Lextar Electronics Corporation | Light emitting diode and fabricating method thereof |
| CN101958378A (en) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | Quaternary vertical light-emitting diode (LED) with current blocking structure and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346225A (en) * | 2013-06-21 | 2013-10-09 | 杭州格蓝丰纳米科技有限公司 | Vertical type graphene LED chip |
| CN104576841A (en) * | 2013-10-22 | 2015-04-29 | 璨圆光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| CN104576841B (en) * | 2013-10-22 | 2017-08-08 | 晶元光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| CN104064642A (en) * | 2014-07-04 | 2014-09-24 | 映瑞光电科技(上海)有限公司 | Vertical type LED manufacturing method |
| CN104064642B (en) * | 2014-07-04 | 2017-01-25 | 映瑞光电科技(上海)有限公司 | Vertical type LED manufacturing method |
| WO2017101520A1 (en) * | 2015-12-14 | 2017-06-22 | 厦门市三安光电科技有限公司 | Nitride bottom layer and manufacturing method therefor |
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Application publication date: 20121114 |