CN102752562B - The method of operation of complementary MOS image sensor - Google Patents
The method of operation of complementary MOS image sensor Download PDFInfo
- Publication number
- CN102752562B CN102752562B CN201210202606.4A CN201210202606A CN102752562B CN 102752562 B CN102752562 B CN 102752562B CN 201210202606 A CN201210202606 A CN 201210202606A CN 102752562 B CN102752562 B CN 102752562B
- Authority
- CN
- China
- Prior art keywords
- pixel
- sensing region
- array unit
- image sensor
- multiplexer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
A kind of method of operation of complementary MOS image sensor, the method comprises the following steps: to sense an object by a pixel-array unit, pixel-array unit comprises M pixel and P multiplexer, each in M pixel is electrically connected with one of them of P multiplexer respectively, M is a positive integer, and P is a positive integer being less than or equal to M; Calculate a sensing region of corresponding object, sensing region comprises the N number of pixel in M pixel, and N is a positive integer being less than or equal to M; Produce line selection signal; And to control and array selecting signal is supplied to N number of pixel by Q multiplexer being electrically connected of N number of pixel, Q one is less than or equal to N and is less than or equal to the positive integer of P; The signal that the N number of pixel reading sensing region in order to be classified as main order produces.The present invention only needs the pixel data in the sensing region of corresponding object track to export, and then significantly reduces frequency of operation and the power consumption of system.
Description
Present patent application is the divisional application that the application number submitted on November 04th, 2009 is 200910212315.1, denomination of invention is the Chinese patent application of " complementary MOS image sensor and method of operation thereof ".
Technical field
The present invention is about a kind of CMOS (Complementary Metal Oxide Semiconductor) (complementary metal oxidesemiconductor, CMOS) image sensor and method of operation thereof, espespecially a kind of cmos image sensor and method of operation thereof improving assembling yields by self-correction mode.
Background technology
Because the development of image sensor in recent years and image processing speed improve, photoelectric type Touch Screen is more and more come into one's own.At present, image sensor can be categorized into charge coupled cell (chargecoupled device, CCD) image sensor and cmos image sensor haply.Generally speaking, ccd image sensor has less noise (noise) than cmos image sensor, and can produce better image quality.But signal processing circuit can be integrated on one chip by cmos image sensor, product is made to be easy to miniaturized.In addition, cmos image sensor is very low in power consumption, and therefore, the application of cmos image sensor is also more and more extensive.
Refer to Fig. 1, Fig. 1 is the schematic diagram of the photoelectric type Touch Screen 1 of prior art.As shown in Figure 1, photoelectric type Touch Screen 1 comprises contact panel 10 and two cmos image sensors 12,14.Cmos image sensor 12,14 is separately positioned on the both sides of contact panel 10.When using the objects 16 such as finger, pointer as user at contact panel 10 enterprising line operate, namely cmos image sensor 12,14 can sense the projection of object 16 respectively, now, as long as know the angle of projected position to position of touch, measure the distance between two cmos image sensors 12,14 again, just can calculate the coordinate of position of touch.
Refer to Fig. 2 and Fig. 3, Fig. 2 is the perspective view on the motion track 160 cmos image sensor 12 in FIG of object 16, and Fig. 3 is the perspective view on the motion track 160' cmos image sensor 12 in FIG of object 16.For cmos image sensor 12, if cmos image sensor 12 and contact panel 10, when assembling, deviation or crooked does not occur, then namely the projection of the motion track 160 of object 16 in the pixel-array unit 120 of cmos image sensor 12 can present the quadrangle of Founder as shown in Figure 2.But, if cmos image sensor 12 and contact panel 10 are subject to assembling the impact of tolerance and deviation or crooked occurs when assembling, then namely the projection of the motion track 160' of object 16 in the pixel-array unit 120 of cmos image sensor 12 can present crooked parallelogram as shown in Figure 3.Now, reading circuit 122 just needs to capture more pixel data and judges for the algorithm of rear end, could eliminate the impact of assembling tolerance, and then increase frequency of operation and the power consumption of system.
Summary of the invention
Therefore, an object of the present invention is the method for operation providing a kind of cmos image sensor, improves assembling yields, to solve the problem by self-correction mode.
According to an embodiment, the method of operation of cmos image sensor of the present invention comprises the following step: sense an object by a pixel-array unit, described pixel-array unit comprises M pixel and P multiplexer, each in a described M pixel is electrically connected with one of them of a described P multiplexer respectively, M is a positive integer, and P is a positive integer being less than or equal to M; Calculate a sensing region of corresponding described object, described sensing region comprises the N number of pixel in a described M pixel, and N is a positive integer being less than or equal to M; Produce line selection signal; And to control and described array selecting signal is supplied to described N number of pixel by Q multiplexer being electrically connected of described N number of pixel, Q one is less than or equal to N and is less than or equal to the positive integer of P; The signal that the described N number of pixel reading described sensing region in order to be classified as main order produces.
According to another embodiment, the method for operation of cmos image sensor of the present invention comprises the following step: sense an object by a pixel-array unit, and wherein, described pixel-array unit comprises M pixel, and M is a positive integer; Calculate a sensing region of corresponding described object, wherein, described sensing region comprises the N number of pixel in a described M pixel, and N is a positive integer being less than or equal to M; Produce line selection signal, export its signal produced to control a described M pixel; Calculate one first pixel and last pixel of each row being arranged in described sensing region; Last pixel described is read to from described first pixel that each arranges in order to be classified as main order; And export the signal that described N number of pixel produces.
Therefore, according to the method for operation of cmos image sensor of the present invention, the present invention only needs the pixel data in the sensing region of corresponding object track to export, and can eliminate the impact of assembling tolerance, and then significantly reduce frequency of operation and the power consumption of system.
Can be further understood by following embodiment and appended accompanying drawing about the advantages and spirit of the present invention.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the photoelectric type Touch Screen of prior art;
Fig. 2 is the perspective view on object track cmos image sensor in FIG;
Fig. 3 is the perspective view on object track cmos image sensor in FIG;
Fig. 4 is the schematic diagram of cmos image sensor according to an embodiment of the invention;
Fig. 5 is the schematic diagram that the pixel-array unit in Fig. 4 has a 3*3 picture element matrix;
Fig. 6 is the circuit diagram of the cmos image sensor in Fig. 5;
Fig. 7 is the schematic diagram that the sensing region in Fig. 5 adds a virtual pixel;
Fig. 8 is the flow chart of the method for operation of cmos image sensor;
Fig. 9 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention;
Figure 10 is the circuit diagram of cmos image sensor according to another embodiment of the present invention;
Figure 11 is the schematic diagram of cmos image sensor according to another embodiment of the present invention;
Figure 12 is the sequential chart of pixel data reading order conversion;
Figure 13 is the schematic diagram of cmos image sensor according to another embodiment of the present invention;
Figure 14 is the schematic diagram that the pixel-array unit in Figure 13 has a 3*3 picture element matrix;
Figure 15 is the circuit diagram of the cmos image sensor in Figure 14;
Figure 16 is the schematic diagram that the sensing region in Figure 14 adds a virtual pixel;
Figure 17 is the schematic diagram of sensing region according to another embodiment of the present invention;
Figure 18 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention;
Figure 19 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.
Drawing reference numeral
1 photoelectric type Touch Screen
10 contact panels
12,14,3,3 ', 5CMOS image sensor
16 objects
30,30', 50,70,120 pixel-array unit
32,72 row driver elements
34,54,74 logical circuits
36,56,76,122 reading circuits
52 row cutting unit
58 image registers
160,160 ' motion track
300,700, P1-P32 pixel
302,302a-302c multiplexer
304,504,704,704 ' sensing region
P0, P10 virtual pixel
S100-S108, S200-S212, S300-S310, S400-S414 process step
Embodiment
Refer to Fig. 4, Fig. 4 is the schematic diagram of cmos image sensor 3 according to an embodiment of the invention.As shown in Figure 4, cmos image sensor 3 comprises pixel-array unit 30, row driver element 32, logical circuit 34 and a reading circuit 36.Row driver element 32, logical circuit 34 and reading circuit 36 are electrically connected with pixel-array unit 30 respectively.
Pixel-array unit 30 is in order to sense an object (not being illustrated in figure) or its motion track.In this embodiment, pixel-array unit 30 comprises M pixel 300 and P multiplexer 302, and wherein, each pixel 300 is electrically connected with one of them of P multiplexer 302 respectively, and M is a positive integer, and P is a positive integer being less than or equal to M.Further illustrate, if P equals M, namely represent that pixel 300 is identical with the quantity of multiplexer 302, and each multiplexer 302 is electrically connected with unique pixel 300 respectively; If P is less than M, namely represent that the quantity of multiplexer 302 is less than the quantity of pixel 300, now, each multiplexer 302 can be electrically connected with at least one pixel 300 respectively.Pixel-array unit 30 in Fig. 4 is and comprises the pixel 300 of equal number and the embodiment of multiplexer 302.For example, if pixel-array unit 30 has the picture element matrix of a 640*480, and pixel 300 is identical with the quantity of multiplexer 302, then M and P all equals 640*480, and also namely pixel-array unit 30 comprises 640*480 pixel 300 and 640*480 multiplexer 302.In addition, the light that pixel 300 Absorbable rod reflects from an object, and absorbed light is converted to a signal of telecommunication.Pixel 300 is generally the structure with transistor and photodiode.It should be noted that, the architectural feature of pixel 300 and action principle can be reached easily for those skilled in the art, do not repeat them here.
Row driver element 32 receives a clock signal and a control signal from a controller (not being illustrated in figure), and produces line selection signal.Array selecting signal is a signal exported for pixel 300 data controlled in pixel-array unit 30.Logical circuit 34 is in order to a sensing region of the object that calculates respective pixel array element 30 and sense or its motion track, and wherein, sensing region comprises the N number of pixel 300 in this M pixel 300, and N is a positive integer being less than or equal to M.Then, array selecting signal is supplied to this N number of pixel 300, Q to be one be less than or equal to N and be less than or equal to the positive integer of P by Q the multiplexer 302 that logical circuit 34 controls to be electrically connected with this N number of pixel 300.Namely equal N for the pixel-array unit 30, Q in Fig. 4 and be less than P.The signal that reading circuit 36 produces in order to this N number of pixel 300 reading this sensing region.
Refer to Fig. 5, Fig. 5 is the schematic diagram that the pixel-array unit 30 in Fig. 4 has a 3*3 picture element matrix.The 3*3 picture element matrix below utilizing Fig. 5 to illustrate is to illustrate technical characteristic of the present invention.In this embodiment, pixel-array unit 30 comprises pixel 300 and the multiplexer 302 of equal number, and also namely above-mentioned M and P all equals 9.See also Fig. 6, Fig. 6 is the circuit diagram of the cmos image sensor 3 in Fig. 5.
When using the objects (not being illustrated in figure) such as finger, pointer to have photoelectric type navigation system (not being illustrated in figure) the enterprising line operate of cmos image sensor 3 one as user, namely pixel-array unit 30 can sense this object or its motion track.Then, the object that senses according to pixel-array unit 30 of logical circuit 34 or its motion track calculate corresponding sensing region 304.As shown in Figure 5, sensing region 304 comprises five pixels (also namely above-mentioned N and Q all equals 5), i.e. P1, P2, P5, P6 and P9.Then, array selecting signal is supplied to this five pixels by the multiplexer 302 that logical circuit 34 controls to be electrically connected with above-mentioned five pixels again, and the signal that five pixels making reading circuit 36 can read sensing region 304 in order to the order being classified as main (row-major) produce.In other words, the pixel order that reading circuit 36 reads sensing region 304 is sequentially P2, P6, P1, P5, P9.Also namely, the first row pixel that reading circuit 36 reads is P2, P6, and secondary series pixel is P1, P5, P9.In this embodiment, sensing region 304 can change, can according to self-correction result setting during start.In addition, when object or its motion track are irregularly shaped, for avoiding follow-up algorithm to complicate, logical circuit 34 can calculate the parallelogram that comprises object or its motion track, using as sensing region.
It should be noted that, because the sensing region 304 in Fig. 5 exceeds the entity area of pixel-array unit 30, each scan time can be made not fix, and increase the calculating of time for exposure.Now, reading circuit 36 of the present invention when reads pixel data, can add virtual pixel (dummypixel) in the part exceeded, and fixes to maintain each scan time, and then simplifies time for exposure calculating.Refer to Fig. 7, Fig. 7 is the schematic diagram that the sensing region 304 in Fig. 5 adds a virtual pixel P0.As shown in Figure 7, after adding virtual pixel P0, the pixel arrangement in sensing region 304 is in a parallelogram, and each row all comprises the pixel of equal number, can maintain fixing scan time thus.
Refer to Fig. 8, Fig. 8 is the flow chart of the method for operation of cmos image sensor.See also Fig. 4 to Fig. 6, coordinate above-mentioned cmos image sensor 3, the method for operation of cmos image sensor of the present invention comprises the following step:
Step S100: by pixel-array unit 30 sensing article or its motion track;
Step S102: calculate should the sensing region 304 of object or its motion track;
Step S104: produce array selecting signal;
Step S 106: this array selecting signal is supplied to pixel P2, P6, P1, P5, P9 by the multiplexer 302 controlling to be electrically connected with the pixel P2 in sensing region 304, P6, P1, P5, P9; And
Step S108: read the pixel P2 of sensing region 304 in order to be classified as main order, signal that P6, P1, P5, P9 produce.
Refer to Fig. 9, Fig. 9 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.See also Fig. 7, coordinate above-mentioned cmos image sensor 3, if sensing region 304 exceeds the entity area of pixel-array unit 30, then the method for operation of cmos image sensor of the present invention can comprise the following step:
Step S200: by pixel-array unit 30 sensing article or its motion track;
Step S202: calculate should the sensing region 304 of object or its motion track;
Step S204: produce array selecting signal;
Step S206: this array selecting signal is supplied to pixel P2, P6, P1, P5, P9 by the multiplexer 302 controlling to be electrically connected with the pixel P2 in sensing region 304, P6, P1, P5, P9;
Step S208: judge whether sensing region 304 exceeds the entity area of pixel-array unit 30, if so, then performs step S210, if not, then performs step S212;
Step S210: add virtual pixel P0 in the part exceeded; And
Step S212: the signal that main order reads the virtual pixel P0 (if having) of sensing region 304 and pixel P2 in order to be classified as, P6, P1, P5, P9 produce.
Refer to Figure 10, Figure 10 is the circuit diagram of cmos image sensor 3' according to another embodiment of the present invention.As shown in Figure 10, cmos image sensor 3' comprises a pixel-array unit 30', row driver element 32, logical circuit 34 and a reading circuit 36, wherein the action principle of row driver element 32, logical circuit 34 and reading circuit 36 as previously mentioned, does not repeat them here.In this embodiment, pixel-array unit 30' has a 4*5 picture element matrix, and also namely pixel-array unit 30' comprises 20 pixel P1-P20.Compared to the pixel-array unit 30 in Fig. 6, the quantity of the multiplexer in pixel-array unit 30' is less than the quantity of pixel.As shown in Figure 10, pixel-array unit 30' only comprises 17 multiplexers, wherein pixel P1, P2 are electrically connected at same multiplexer 302a, pixel P3, P4 is electrically connected at same multiplexer 302b, and pixel P11, P12 are electrically connected at same multiplexer 302c.In other words, the present invention can utilize a multiplexer to control multiple pixel simultaneously, and then reduces the quantity of multiplexer.The pixel quantity be electrically connected with single multiplexer can design according to practical application, is not limited with two shown in Figure 10.It should be noted that, if there is multiple pixel to be electrically connected to a multiplexer simultaneously, then this multiple pixel need be arranged in the different rows of pixel-array unit 30'.As shown in Figure 10, pixel P1, P2 are positioned at different rows, and pixel P3, P4 are positioned at different rows, and pixel P11, P12 are also positioned at different rows.Especially, the multiple pixels being simultaneously electrically connected to a multiplexer can be arranged in the same row of pixel-array unit 30', but not as limit.As shown in Figure 10, pixel P1, P2 are positioned at same row, and pixel P3, P4 are positioned at same row, and pixel P11, P12 are also positioned at same row.
Refer to Figure 11 and Figure 12, Figure 11 is the schematic diagram of cmos image sensor 5 according to another embodiment of the present invention, and Figure 12 is the sequential chart of pixel data reading order conversion.As shown in figure 11, cmos image sensor 5 comprises a pixel-array unit 50, a line driver element 52, logical circuit 54, reading circuit 56 and an image register (frame buffer) 58.Row cutting unit 52, logical circuit 54 and reading circuit 56 are electrically connected with pixel-array unit 50 respectively, and image register 58 and reading circuit 56 are electrically connected.The 4*3 picture element matrix that Figure 11 illustrates only is used to technical characteristic of the present invention is described, the present invention is not as limit.The light that pixel P1-P12 Absorbable rod reflects from an object, and absorbed light is converted to a signal of telecommunication.Pixel P1-P12 is generally the structure with transistor and photodiode.It should be noted that, the architectural feature of pixel P1-P12 and action principle can be reached easily for those skilled in the art, do not repeat them here.
Row cutting unit 52 receives a clock signal and a control signal from a controller (not being illustrated in figure), and produces a row selection signal.Row selection signal is a signal exported for the pixel P1-P12 data controlled in pixel-array unit 50.Logical circuit 54 is in order to a sensing region of the object that calculates respective pixel array element 50 and sense or its motion track.Then, the signal that the pixel that reading circuit 56 first reads this sensing region in order to the order of behavior master (column-major) produces.Afterwards, image register 58 is converted to based on the data of the Sequential output of behavior master the order that arranges by adopting again.
For example, when using the objects (not being illustrated in figure) such as finger, pointer to have photoelectric type navigation system (not being illustrated in figure) the enterprising line operate of cmos image sensor 5 one as user, namely pixel-array unit 50 can sense this object or its motion track.Then, the object that senses according to pixel-array unit 50 of logical circuit 54 or its motion track calculate corresponding sensing region 504.As shown in figure 11, sensing region 504 comprises five pixels, i.e. P2, P3, P7, P8 and P12.It should be noted that, because the sensing region 504 in Figure 11 exceeds the entity area of pixel-array unit 50, each scan time can be made not fix, and increase the calculating of time for exposure.Now, reading circuit 56 of the present invention when reads pixel data, can add virtual pixel P0 in the part exceeded, and fixes to maintain each scan time, and then simplifies time for exposure calculating.
The control of the row selection signal produced by row cutting unit 52, the signal that the pixel that reading circuit 56 first reads sensing region 504 in order to the order of behavior master produces, the order of reading is sequentially P0, P2, P3, P7, P8 and P12.Then, image register 58 is converted to based on the data of the Sequential output of behavior master the order that arranges by adopting again.As shown in figure 12, after image register 58 is changed, namely the order of reading becomes P0, P3, P8, P2, P7 and P12.In addition, in this embodiment, because the result that scans out because scanning linear and object profile nonopiate, and can export crooked profile.The present invention can utilize image register 58 to rearrange the pixel data of reading, to improve above-mentioned phenomenon.
Refer to Figure 13, Figure 13 is the schematic diagram of cmos image sensor 7 according to another embodiment of the present invention.As shown in figure 13, cmos image sensor 7 comprises pixel-array unit 70, row driver element 72, logical circuit 74 and a reading circuit 76.Row driver element 72 and reading circuit 76 are electrically connected with pixel-array unit 70 respectively, and logical circuit 74 and reading circuit 76 are electrically connected.
Pixel-array unit 70 is in order to sense an object (not being illustrated in figure) or its motion track.In this embodiment, pixel-array unit 70 comprises M pixel 700, and wherein, M is a positive integer.In addition, the light that pixel 700 Absorbable rod reflects from an object, and absorbed light is converted to a signal of telecommunication.Pixel 700 is generally the structure with transistor and photodiode.It should be noted that, the architectural feature of pixel 700 and action principle can be reached easily for those skilled in the art, do not repeat them here.
Row driver element 72 receives a clock signal and a control signal from a controller (not being illustrated in figure), and produces line selection signal.Array selecting signal is a signal exported for pixel 700 data controlled in pixel-array unit 70.The signal that reading circuit 76 produces in order to the pixel 700 of read pixel array element 70.Logical circuit 74 is in order to a sensing region of the object that calculates respective pixel array element 70 and sense or its motion track, and wherein, sensing region comprises the N number of pixel 700 in this M pixel 700, and N is a positive integer being less than or equal to M.Then, logical circuit 74 calculates first pixel and last pixel of each row being arranged in sensing region, and control reading circuit 76 and read to last pixel, the signal produced with the N number of pixel in output sensing region in order to first pixel being classified as main order and arranging from each.
Refer to Figure 14 and Figure 15, Figure 14 is the schematic diagram that the pixel-array unit 70 in Figure 13 has a 3*3 picture element matrix, and Figure 15 is the circuit diagram of the cmos image sensor 7 in Figure 14.The 3*3 picture element matrix below utilizing Figure 14 and Figure 15 to illustrate is to illustrate technical characteristic of the present invention.
When using the objects (not being illustrated in figure) such as finger, pointer to have photoelectric type navigation system (not being illustrated in figure) the enterprising line operate of cmos image sensor 7 one as user, namely pixel-array unit 70 can sense this object or its motion track.Then, the object that senses according to pixel-array unit 70 of logical circuit 74 or its motion track calculate corresponding sensing region 704.As shown in figure 14, sensing region 704 comprises five pixels (also namely above-mentioned N equals 5), i.e. P1, P2, P5, P6 and P9, wherein pixel P1, P2 are arranged in the first row of sensing region 704, pixel P5, P6 are arranged in the secondary series of sensing region 704, and pixel P9 is arranged in the 3rd row of sensing region 704.Then, logical circuit 74 calculates first pixel and last pixel of each row being arranged in sensing region 704.As shown in figure 14, first pixel of the first row in sensing region 704 is P1 and last pixel is P2, first pixel of the secondary series in sensing region 704 is P5 and last pixel is P6, and tertial first pixel in sensing region 704 and last pixel are all P9.Then, logical circuit 74 controls reading circuit 76 and reads to last pixel, the signal produced with the pixel of five in output sensing region 704 in order to first pixel being classified as main order and arranging from each.In this embodiment, the output order of five pixels in sensing region 704 is P1, P2, P5, P6, P9.
In this embodiment, sensing region 704 can change, can according to self-correction result setting during start.In addition, when object or its motion track are irregularly shaped, for avoiding follow-up algorithm to complicate, logical circuit 74 can calculate the parallelogram that comprises object or its motion track, using as sensing region.
It should be noted that, because the sensing region 704 in Figure 14 exceeds the entity area of pixel-array unit 70, each scan time can be made not fix, and increase the calculating of time for exposure.Now, reading circuit 76 of the present invention when reads pixel data, can add virtual pixel in the part exceeded, and fixes to maintain each scan time, and then simplifies time for exposure calculating.Refer to Figure 16, Figure 16 is the schematic diagram that the sensing region 704 in Figure 14 adds a virtual pixel P10.As shown in figure 16, after adding virtual pixel P10, the pixel arrangement in sensing region 704 is in a parallelogram, and each row all comprises the pixel of equal number, can maintain fixing scan time thus.Now, tertial first pixel in sensing region 704 is P9 and last pixel is virtual pixel P10.
Refer to Figure 17, Figure 17 is the schematic diagram of sensing region 704' according to another embodiment of the present invention.Except above-mentioned parallelogram, the present invention is after suitable setting, and reading circuit 76 also can read and exports the pixel data of sensing region 704' as shown in figure 17.It should be noted that, because sensing region 704' comprises six pixel P10, P11, P12 and P14, P15, P16 in a second column, and pixel P10, P11, P12 and pixel P14, P15, P16 are discontinuous, now, logical circuit 74 can distinguish first pixel in calculating pixel P10, P11, P12 and pixel P14, P15, P16 and last pixel, also first pixel namely in pixel P10, P11, P12 is P10 and last pixel is P12, and pixel P14, first pixel in P15, P16 are P14 and last pixel is P16.Therefore, for the secondary series shown in Figure 17, reading circuit 76 first can sequentially read to last pixel P12 from first pixel P10, more sequentially reads to last pixel P16 from another one first pixel P14.In other words, the pixel that reading circuit 76 reads in same row can be continuous or discontinuous, depending on the scope that sensing region is contained.
Refer to Figure 18, Figure 18 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.See also Figure 13 to Figure 15, coordinate above-mentioned cmos image sensor 7, the method for operation of cmos image sensor of the present invention comprises the following step:
Step S300: by pixel-array unit 70 sensing article or its motion track;
Step S302: calculate should the sensing region 704 of object or its motion track;
Step S304: produce array selecting signal, export its signal produced with the pixel controlled in pixel-array unit 70;
Step S306: first pixel and last pixel that calculate each row being arranged in sensing region 704;
Step S308: first pixel arranged from each in order to be classified as main order reads to last pixel; And
Step S310: the signal that the pixel P1 in output sensing region 704, P2, P5, P6, P9 produce.
Refer to Figure 19, Figure 19 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.See also Figure 16, coordinate above-mentioned cmos image sensor 7, if sensing region 704 exceeds the entity area of pixel-array unit 70, then the method for operation of cmos image sensor of the present invention can comprise the following step:
Step S400: by pixel-array unit 70 sensing article or its motion track;
Step S402: calculate should the sensing region 704 of object or its motion track;
Step S404: produce array selecting signal, export its signal produced with the pixel controlled in pixel-array unit 70;
Step S406: judge whether sensing region 704 exceeds the entity area of pixel-array unit 70, if so, then performs step S408, if not, then performs step S410;
Step S408: add virtual pixel P10 in the part exceeded;
Step S410: first pixel and last pixel that calculate each row being arranged in sensing region 704;
Step S412: first pixel arranged from each in order to be classified as main order reads to last pixel; And
Step S414: the signal that the pixel P1 in output sensing region 704, P2, P5, P6, P9 produce and virtual pixel P10 (if having).
Compared to prior art, the present invention utilizes multiplexer to control pixel data and exports, and makes logical circuit can define by controlling multiplexer the scanning linear slope that each array selecting signal chooses.In addition, the present invention also first can read the pixel data in sensing region in order to the order of behavior master, then is converted to based on the data of the Sequential output of behavior master the order that arranges adopting by image register.Moreover, the present invention also can increase by a logical circuit at reading circuit, to calculate starting point (i.e. first pixel) and the terminal (i.e. last pixel) of each row in sensing region according to the object sensed or its motion track, and then control the pixel data in reading circuit output sensing region.Because the present invention only needs the pixel data in the sensing region of corresponding object or its motion track to export, so can significantly reduce system operating frequency and power consumption.In addition, when logical circuit judges that sensing region exceeds the entity area of pixel-array unit, reading circuit can add virtual pixel in the part exceeded, and fixes to maintain each scan time, and then simplifies time for exposure calculating.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the claims in the present invention scope change and modify, and all should belong to covering scope of the present invention.
Claims (3)
1. a method of operation for complementary MOS image sensor, is characterized in that, described method comprises the following steps:
An object is sensed by a pixel-array unit, described pixel-array unit comprises M pixel and P multiplexer, each in a described M pixel is electrically connected with one of them of a described P multiplexer respectively, and M is a positive integer, and P is a positive integer being less than or equal to M;
Calculate a sensing region of corresponding described object, described sensing region is irregular and comprises the N number of pixel in a described M pixel, and N is a positive integer being less than or equal to M;
Produce line selection signal; And
Described array selecting signal is supplied to described N number of pixel by Q the multiplexer controlling to be electrically connected with described N number of pixel, and Q one is less than or equal to N and is less than or equal to the positive integer of P;
The signal that the described N number of pixel reading described sensing region in order to be classified as main order produces;
When described sensing region exceeds an entity area of described pixel-array unit, add at least one virtual pixel in the part exceeded, and described sensing region is a parallelogram.
2. method of operation as claimed in claim 1, it is characterized in that, when P is less than M, at least two pixels in a described M pixel are electrically connected to a multiplexer in a described P multiplexer simultaneously, and described at least two pixels are arranged in the different rows of described pixel-array unit and same row.
3. a method of operation for complementary MOS image sensor, is characterized in that, described method comprises the following steps:
Sense an object by a pixel-array unit, described pixel-array unit comprises M pixel, and M is a positive integer;
Calculate a sensing region of corresponding described object, described sensing region comprises the N number of pixel in a described M pixel, and N is a positive integer being less than or equal to M;
Produce line selection signal, export its signal produced to control a described M pixel;
Calculate one first pixel and last pixel of each row being arranged in described sensing region;
Last pixel described is read to from described first pixel that each arranges in order to be classified as main order; And
Export the signal that described N number of pixel produces;
When described sensing region exceeds an entity area of described pixel-array unit, add at least one virtual pixel in the part exceeded, and described sensing region is a parallelogram.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102123151A CN102055919B (en) | 2009-11-04 | 2009-11-04 | Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102123151A Division CN102055919B (en) | 2009-11-04 | 2009-11-04 | Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102752562A CN102752562A (en) | 2012-10-24 |
| CN102752562B true CN102752562B (en) | 2015-09-02 |
Family
ID=43959795
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102123151A Expired - Fee Related CN102055919B (en) | 2009-11-04 | 2009-11-04 | Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof |
| CN201210202606.4A Expired - Fee Related CN102752562B (en) | 2009-11-04 | 2009-11-04 | The method of operation of complementary MOS image sensor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102123151A Expired - Fee Related CN102055919B (en) | 2009-11-04 | 2009-11-04 | Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102055919B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016184843A (en) * | 2015-03-26 | 2016-10-20 | ソニー株式会社 | Image sensor, processing method, and electronic apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1823532A (en) * | 2003-07-15 | 2006-08-23 | 伊斯曼柯达公司 | Image sensor with charge binning |
| CN1836440A (en) * | 2003-06-16 | 2006-09-20 | 微米技术有限公司 | Charge pumps for CMOS imagers |
| CN101170653A (en) * | 2006-10-27 | 2008-04-30 | 国际商业机器公司 | System and method for disfigurement pixel in pixel array |
| CN101383367A (en) * | 2007-09-07 | 2009-03-11 | 东部高科股份有限公司 | Image sensor and method for manufacturing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7876980B2 (en) * | 2004-11-11 | 2011-01-25 | Panasonic Corporation | Imaging apparatus and imaging method for outputting a specified number of pixels in a specified area |
| US7323378B2 (en) * | 2005-10-20 | 2008-01-29 | Pixart Imaging Inc. | Method for fabricating CMOS image sensor |
| GB2454744A (en) * | 2007-11-19 | 2009-05-20 | Selex Sensors & Airborne Sys | Imaging device and method |
| CN101751165A (en) * | 2008-11-28 | 2010-06-23 | 原相科技股份有限公司 | Touch-control system and method thereof for obtaining location of referent |
-
2009
- 2009-11-04 CN CN2009102123151A patent/CN102055919B/en not_active Expired - Fee Related
- 2009-11-04 CN CN201210202606.4A patent/CN102752562B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836440A (en) * | 2003-06-16 | 2006-09-20 | 微米技术有限公司 | Charge pumps for CMOS imagers |
| CN1823532A (en) * | 2003-07-15 | 2006-08-23 | 伊斯曼柯达公司 | Image sensor with charge binning |
| CN101170653A (en) * | 2006-10-27 | 2008-04-30 | 国际商业机器公司 | System and method for disfigurement pixel in pixel array |
| CN101383367A (en) * | 2007-09-07 | 2009-03-11 | 东部高科股份有限公司 | Image sensor and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102055919B (en) | 2012-11-07 |
| CN102055919A (en) | 2011-05-11 |
| CN102752562A (en) | 2012-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6900837B2 (en) | Image sensor and pixel reading method used this image sensor | |
| US7671313B2 (en) | Image sensor and control method of the image sensor | |
| CN103024304B (en) | Solid-state image pickup device and solid-state image pickup system | |
| Dierickx et al. | Random addressable active pixel image sensors | |
| US20050062864A1 (en) | Solid-state image sensing apparatus | |
| KR101313055B1 (en) | Matrix sensor | |
| TWI520030B (en) | Cmos image sensor and method of operating the same | |
| US6529854B2 (en) | Coordinate position detecting method and display apparatus using the same | |
| US20080225160A1 (en) | Mobile Devices Having An Image Sensor For Charging A Battery | |
| KR20200086939A (en) | Method for processing image signal, image signal processor, and image sensor chip | |
| CN102752562B (en) | The method of operation of complementary MOS image sensor | |
| US7019774B2 (en) | Imaging apparatus and mobile terminal incorporating same | |
| US8508501B2 (en) | Multi-field sensing of a capacitive touch panel | |
| CN107222681A (en) | The processing method and mobile terminal of a kind of view data | |
| CN102905087A (en) | Solid-state imaging apparatus and ad-conversion output bit count control method | |
| US7262801B2 (en) | Image processing apparatus having multiple resolutions | |
| TWI691887B (en) | Optical sensing method integrating touch and fingerprint collection, touch display device and information processing device | |
| JP2546514B2 (en) | Signal readout circuit and its driving method | |
| US8072521B2 (en) | Solid-state imaging device, method for driving solid-state imaging device and imaging apparatus | |
| JP4531294B2 (en) | Symbol information reader | |
| CN102118585B (en) | Method and device for acquiring dynamic image with fixed frame rate in image sensor | |
| CN113612948A (en) | Readout circuit and image sensor | |
| CN101378441B (en) | Image reading apparatus | |
| JP5542420B2 (en) | CMOS image sensor and operation method thereof | |
| TWI393039B (en) | Capacitive touch device and its control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 Termination date: 20201104 |