CN102055919B - Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof - Google Patents
Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof Download PDFInfo
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- CN102055919B CN102055919B CN2009102123151A CN200910212315A CN102055919B CN 102055919 B CN102055919 B CN 102055919B CN 2009102123151 A CN2009102123151 A CN 2009102123151A CN 200910212315 A CN200910212315 A CN 200910212315A CN 102055919 B CN102055919 B CN 102055919B
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Abstract
The present invention provides a CMOS image sensor and an operation method thereof, wherein the image sensor comprises a pixel array unit, a line of driving units and a logic circuit. The pixel array unit is used for sensing an object, wherein the pixel array unit comprises M pixels and P multiplexers; and each of the M pixels is respectively electrically connected to one of the P multiplexers. The line of driving units and the logic circuit are respectively electrically connected to the P multiplexers. The line of driving units are used for generating a line of selection signals. The logic circuit is used for calculating a sensing area of the corresponding article, wherein the sensing area comprises N pixels of the M pixels. The logic circuit is also used for controlling Q multiplexers electrically connected to the N pixels to supply the line of selection signals to the N pixels. In the present invention, operation frequency and power consumption are greatly reduced only by outputting the pixel data in the sensing area of the corresponding article track.
Description
Technical field
The present invention is about a kind of CMOS complementary metal-oxide-semiconductor (complementary metal oxidesemiconductor; CMOS) image sensor and method of operation thereof refer to a kind of cmos image sensor and the method for operation thereof that can improve the assembling yields through the self-correction mode especially.
Background technology
Because the development of image sensor and image processing speed improve in recent years, make the photoelectric type Touch Screen more and more come into one's own.At present, image sensor can be categorized into charge coupled cell (chargecoupled device, CCD) image sensor and cmos image sensor haply.Generally speaking, the ccd image sensor has noise (noise) still less than cmos image sensor, and can produce the better pictures quality.Yet the cmos image sensor can be integrated in signal processing circuit on the one chip, makes product be easy to miniaturization.In addition, the cmos image sensor is very low on power consumption, and therefore, the application of cmos image sensor is also more and more extensive.
See also Fig. 1, Fig. 1 is the sketch map of the photoelectric type Touch Screen 1 of prior art.As shown in Figure 1, photoelectric type Touch Screen 1 comprises contact panel 10 and two cmos image sensors 12,14. Cmos image sensor 12,14 is separately positioned on the both sides of contact panel 10.When using objects 16 such as finger, pointer as the user at contact panel 10 enterprising line operates; Cmos image sensor 12,14 promptly can sense the projection of object 16 respectively; At this moment; As long as know the angle of projected position to position of touch, measure two cmos image sensors 12, the distance between 14 again, just can calculate the coordinate of position of touch.
See also Fig. 2 and Fig. 3, Fig. 2 is the perspective view on the cmos image sensor 12 of motion track 160 in Fig. 1 of object 16, and Fig. 3 is the perspective view on the cmos image sensor 12 of motion track 160 ' in Fig. 1 of object 16.With cmos image sensor 12 is example; If cmos image sensor 12 when assembling deviation or crooked does not take place with contact panel 10, then the projection of the motion track 160 of object 16 on the pixel-array unit 120 of cmos image sensor 12 promptly can present the quadrangle of Founder as shown in Figure 2.Yet; If cmos image sensor 12 and contact panel 10 receive the influence of assembling tolerance and deviation or crooked takes place when assembling, then the projection of the motion track 160 of object 16 ' on the pixel-array unit 120 of cmos image sensor 12 promptly can present crooked parallelogram as shown in Figure 3.At this moment, reading circuit 122 just need grasp more pixel data to be judged for the algorithm of rear end, could eliminate the influence of assembling tolerance, and then increases the frequency of operation and the power consumption of system.
Summary of the invention
Therefore, one of the object of the invention is to provide a kind of cmos image sensor and method of operation thereof, can improve the assembling yields through the self-correction mode, to address the above problem.
According to an embodiment, cmos image sensor of the present invention comprises a pixel-array unit, a row driver element and a logical circuit.Said pixel-array unit is in order to sensing one object; Wherein, said pixel-array unit comprises M pixel and P multiplexer, each said M pixel respectively with one of them electric connection of a said P multiplexer; M is a positive integer, and P one is less than or equal to the positive integer of M.Said row driver element and said logical circuit electrically connect with said P multiplexer respectively.Said row driver element is in order to produce an array selecting signal.Said logical circuit is then in order to calculate a sensing region of corresponding said object, and wherein, said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M.In addition, said logical circuit and said array selecting signal is supplied to a said N pixel in order to Q multiplexer of control and the electric connection of said N pixel, Q are one to be less than or equal to N and to be less than or equal to the positive integer of P.
According to another embodiment; The method of operation of cmos image sensor of the present invention comprises the following step: through a pixel-array unit sensing one object; Wherein, said pixel-array unit comprises M pixel and P multiplexer, each said M pixel respectively with one of them electric connection of a said P multiplexer; M is a positive integer, and P one is less than or equal to the positive integer of M; Calculate a sensing region of corresponding said object, wherein, said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M; Produce an array selecting signal; And Q the multiplexer that control and said N pixel electrically connect be supplied to a said N pixel with said array selecting signal, and Q one is less than or equal to N and is less than or equal to the positive integer of P.
According to another embodiment, cmos image sensor of the present invention comprises a pixel-array unit, a row driver element, a reading circuit and a logical circuit.Said reading circuit and said row driver element all electrically connect with said pixel-array unit, and said logical circuit and the electric connection of said reading circuit.Said pixel-array unit is in order to sensing one object, and wherein, said pixel-array unit comprises M pixel, and M is a positive integer.Said row driver element is in order to produce an array selecting signal, and said array selecting signal is controlled said M the pixel output signal that it produced.Said reading circuit is in order to read a said M signal that pixel produced.Said logical circuit is in order to calculate a sensing region of corresponding said object, and wherein, said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M.Said logical circuit calculates first pixel and last pixel of each row that is arranged in said sensing region; And control said reading circuit and read to said last pixel from said first pixel of each row, to export a said N signal that pixel was produced in order to classify main order as.
According to another embodiment, the method for operation of cmos image sensor of the present invention comprises the following step: through a pixel-array unit sensing one object, wherein, said pixel-array unit comprises M pixel, and M is a positive integer; Calculate a sensing region of corresponding said object, wherein, said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M; Produce an array selecting signal, to control said M the pixel output signal that it was produced; Calculating is arranged in first pixel and last pixel of each row of said sensing region; Read to said last pixel in order to classify main order as from said first pixel of each row; And export a said N signal that pixel produced.
Therefore, according to cmos image sensor of the present invention and method of operation thereof, the present invention only need can eliminate the output of the pixel data in the sensing region of corresponding object track the influence of assembling tolerance, and then significantly reduce the frequency of operation and the power consumption of system.
Can further be understood through following embodiment and appended accompanying drawing about advantage of the present invention and spirit.
Description of drawings
Fig. 1 is the sketch map of the photoelectric type Touch Screen of prior art;
Fig. 2 is the perspective view on the cmos image sensor of object track in Fig. 1;
Fig. 3 is the perspective view on the cmos image sensor of object track in Fig. 1;
Fig. 4 is the sketch map of cmos image sensor according to an embodiment of the invention;
Fig. 5 has the sketch map of a 3*3 picture element matrix for the pixel-array unit among Fig. 4;
Fig. 6 is the circuit diagram of the cmos image sensor among Fig. 5;
Fig. 7 adds the sketch map of a virtual pixel for the sensing region among Fig. 5;
Fig. 8 is the flow chart of the method for operation of cmos image sensor;
Fig. 9 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention;
Figure 10 is the circuit diagram of cmos image sensor according to another embodiment of the present invention;
Figure 11 is the sketch map of cmos image sensor according to another embodiment of the present invention;
Figure 12 reads the sequential chart of order conversion for pixel data;
Figure 13 is the sketch map of cmos image sensor according to another embodiment of the present invention;
Figure 14 has the sketch map of a 3*3 picture element matrix for the pixel-array unit among Figure 13;
Figure 15 is the circuit diagram of the cmos image sensor among Figure 14;
Figure 16 adds the sketch map of a virtual pixel for the sensing region among Figure 14;
Figure 17 is the sketch map of sensing region according to another embodiment of the present invention;
Figure 18 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention;
Figure 19 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.
Drawing reference numeral
1 photoelectric type Touch Screen
10 contact panels
12,14,3,3 ', the 5CMOS image sensor
16 objects
30,30 ', 50,70,120 pixel-array unit
32,72 row driver elements
34,54,74 logical circuits
36,56,76,122 reading circuits
52 row driver elements
58 image registers
160,160 ' motion track
300,700, P1-P32 pixel
302,302a-302c multiplexer
304,504,704,704 ' sensing region
P0, P10 virtual pixel
S100-S108, S200-S212, S300-S310, S400-S414 process step
Embodiment
See also Fig. 4, Fig. 4 is the sketch map of cmos image sensor 3 according to an embodiment of the invention.As shown in Figure 4, cmos image sensor 3 comprises a pixel-array unit 30, a row driver element 32, a logical circuit 34 and a reading circuit 36.Row driver element 32, logical circuit 34 and reading circuit 36 electrically connect with pixel-array unit 30 respectively.
Pixel-array unit 30 is in order to sensing one object (not being illustrated among the figure) or its motion track.In this embodiment, pixel-array unit 30 comprises M pixel 300 and P multiplexer 302, wherein, each pixel 300 respectively with one of them electric connection of P multiplexer 302, and M is a positive integer, P one is less than or equal to the positive integer of M.Further specify, if P equals M, promptly remarked pixel 300 is identical with the quantity of multiplexer 302, and each multiplexer 302 electrically connects with unique pixel 300 respectively; If P, representes promptly that the quantity of multiplexer 302 is less than the quantity of pixel 300 less than M, at this moment, each multiplexer 302 can electrically connect with at least one pixel 300 respectively.Pixel-array unit 30 among Fig. 4 is the pixel 300 that comprises equal number and the embodiment of multiplexer 302.For example; If pixel-array unit 30 has the picture element matrix of a 640*480; And pixel 300 is identical with the quantity of multiplexer 302, and then M and P all equal 640*480, also is that pixel-array unit 30 comprises 640*480 pixel 300 and 640*480 multiplexer 302.In addition, pixel 300 can absorb the light that is reflected from an object, and converts the light that is absorbed into a signal of telecommunication.Pixel 300 is generally the structure with transistor and photodiode.What need explanation is that the architectural feature of pixel 300 and action principle repeat no more at this for those skilled in the art can reach easily.
See also Fig. 5, Fig. 5 has the sketch map of a 3*3 picture element matrix for the pixel-array unit 30 among Fig. 4.The 3*3 picture element matrix that below utilizes Fig. 5 and illustrated is explained technical characterictic of the present invention.In this embodiment, pixel-array unit 30 comprises the pixel 300 and the multiplexer 302 of equal number, also is that above-mentioned M and P all equals 9.Please consult Fig. 6 in the lump, Fig. 6 is the circuit diagram of the cmos image sensor 3 among Fig. 5.
Use objects (not being illustrated among the figure) such as finger, pointer when one has the enterprising line operate of photoelectric type navigation system (not being illustrated among the figure) of cmos image sensor 3 as the user, pixel-array unit 30 promptly can sense this object or its motion track.Then, 34 object or its motion tracks that sensed according to pixel-array unit 30 of logical circuit calculate corresponding sensing region 304.As shown in Figure 5, sensing region 304 comprises five pixels (also being that above-mentioned N and Q all equals 5), i.e. P1, P2, P5, P6 and P9.Then; Logical circuit 34 is controlled the multiplexer 302 that electrically connects with above-mentioned five pixels again array selecting signal is supplied to this five pixels, and makes reading circuit 36 can read five signals that pixel produced of sensing region 304 in order to the order of classifying main (row-major) as.In other words, reading circuit 36 pixel order that reads sensing region 304 is P2, P6, P1, P5, P9 in regular turn.Also promptly, the first row pixel that reading circuit 36 reads is P2, P6, and the secondary series pixel is P1, P5, P9.In this embodiment, sensing region 304 can change, and can set according to when start self-correction result.In addition,, complicate for avoiding follow-up algorithm when object or its motion track when being irregularly shaped, logical circuit 34 can calculate one comprise object or its motion track parallelogram, with as sensing region.
What need explanation is, because the sensing region 304 among Fig. 5 exceeds the entity area of pixel-array unit 30, can make each time that scans unfixing, and increase the calculating of time for exposure.At this moment, reading circuit 36 of the present invention can be when reads pixel data, adds virtual pixel (dummypixel) in the part that exceeds, and scans the time at every turn and fixes to keep, and then simplify the time for exposure and calculate.See also Fig. 7, Fig. 7 is the sketch map that the sensing region 304 among Fig. 5 adds a virtual pixel P0.As shown in Figure 7, after adding virtual pixel P0, the pixel in the sensing region 304 is arranged and is a parallelogram, and each row all comprises the pixel of equal number, can keep the fixing time that scans thus.
See also Fig. 8, Fig. 8 is the flow chart of the method for operation of cmos image sensor.Please consult Fig. 4 to Fig. 6 in the lump, cooperate above-mentioned cmos image sensor 3, the method for operation of cmos image sensor of the present invention comprises the following step:
Step S100: through pixel-array unit 30 sensing articles or its motion track;
Step S102: calculate should object or the sensing region 304 of its motion track;
Step S104: produce array selecting signal;
Step S106: the multiplexer 302 that the pixel P2 in control and the sensing region 304, P6, P1, P5, P9 electrically connect is supplied to pixel P2, P6, P1, P5, P9 with this array selecting signal; And
Step S108: in order to classify the signal that pixel P2, P6, P1, P5, P9 produced that main order reads sensing region 304 as.
See also Fig. 9, Fig. 9 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.Please consult Fig. 7 in the lump, cooperate above-mentioned cmos image sensor 3, if sensing region 304 exceeds the entity area of pixel-array unit 30, the method for operation of cmos image sensor then of the present invention can comprise the following step:
Step S200: through pixel-array unit 30 sensing articles or its motion track;
Step S202: calculate should object or the sensing region 304 of its motion track;
Step S204: produce array selecting signal;
Step S206: the multiplexer 302 that the pixel P2 in control and the sensing region 304, P6, P1, P5, P9 electrically connect is supplied to pixel P2, P6, P1, P5, P9 with this array selecting signal;
Step S208: judge whether sensing region 304 exceeds the entity area of pixel-array unit 30, if, execution in step S210 then, if not, execution in step S212 then;
Step S210: add virtual pixel P0 in the part that exceeds; And
Step S212: in order to classify the signal that the virtual pixel P0 that main order reads sensing region 304 (if having) and pixel P2, P6, P1, P5, P9 are produced as.
See also Figure 10, Figure 10 be according to another embodiment of the present invention cmos image sensor 3 ' circuit diagram.Shown in figure 10; Cmos image sensor 3 ' a comprise pixel-array unit 30 ', a row driver element 32, a logical circuit 34 and a reading circuit 36; Wherein the action principle of row driver element 32, logical circuit 34 and reading circuit 36 repeats no more at this as previously mentioned.In this embodiment, pixel-array unit 30 ' have a 4*5 picture element matrix also is 20 pixel P1-P20 of pixel-array unit 30 ' comprise.Pixel-array unit 30 in Fig. 6, pixel-array unit 30 ' in the quantity of multiplexer be less than the quantity of pixel.Shown in figure 10; 17 multiplexers of pixel-array unit 30 ' only comprise; Wherein pixel P1, P2 are electrically connected at same multiplexer 302a, and pixel P3, P4 are electrically connected at same multiplexer 302b, and pixel P11, P12 are electrically connected at same multiplexer 302c.In other words, the present invention's multiplexer capable of using is controlled a plurality of pixels simultaneously, and then reduces the quantity of multiplexer.The pixel quantity that electrically connects with single multiplexer can design according to practical application, does not exceed with two shown in Figure 10.What need explanation is, if there are a plurality of pixels to be electrically connected to a multiplexer simultaneously, then these a plurality of pixels need be arranged in pixel-array unit 30 ' different rows.Shown in figure 10, pixel P1, P2 are positioned at different rows, and pixel P3, P4 are positioned at different rows, and pixel P11, P12 also are positioned at different rows.Especially, a plurality of pixels that are electrically connected to a multiplexer simultaneously can be arranged in pixel-array unit 30 ' same row, but not as limit.Shown in figure 10, pixel P1, P2 are positioned at same row, and pixel P3, P4 are positioned at same row, and pixel P11, P12 also are positioned at same row.
See also Figure 11 and Figure 12, Figure 11 is the sketch map of cmos image sensor 5 according to another embodiment of the present invention, and Figure 12 reads the sequential chart of order conversion for pixel data.Shown in figure 11, cmos image sensor 5 comprises a pixel-array unit 50, delegation's driver element 52, a logical circuit 54, a reading circuit 56 and an image register (frame buffer) 58.Row driver element 52, logical circuit 54 and reading circuit 56 electrically connect with pixel-array unit 50 respectively, and image register 58 electrically connects with reading circuit 56.The 4*3 picture element matrix that Figure 11 illustrated only is to be used for explaining technical characterictic of the present invention, and the present invention is not as limit.Pixel P1-P12 can absorb the light that is reflected from an object, and converts the light that is absorbed into a signal of telecommunication.Pixel P1-P12 is generally the structure with transistor and photodiode.What need explanation is that the architectural feature of pixel P1-P12 and action principle repeat no more at this for those skilled in the art can reach easily.
For example; Use objects (not being illustrated among the figure) such as finger, pointer when one has the enterprising line operate of photoelectric type navigation system (not being illustrated among the figure) of cmos image sensor 5 as the user, pixel-array unit 50 promptly can sense this object or its motion track.Then, 54 object or its motion tracks that sensed according to pixel-array unit 50 of logical circuit calculate corresponding sensing region 504.Shown in figure 11, sensing region 504 comprises five pixels, i.e. P2, P3, P7, P8 and P12.What need explanation is, because the sensing region 504 among Figure 11 exceeds the entity area of pixel-array unit 50, can make each time that scans unfixing, and increase the calculating of time for exposure.At this moment, reading circuit 56 of the present invention can be when reads pixel data, adds virtual pixel P0 in the part that exceeds, and scans the time at every turn and fixes to keep, and then simplify the time for exposure and calculate.
The control of the row selection signal that produces through row driver element 52, reading circuit 56 reads the signal that pixel produced of sensing region 504 earlier in order to behavior master's order, and the order that reads is P0, P2, P3, P7, P8 and P12 in regular turn.Then, image register 58 will adopt with the data transaction of behavior master's order output to classify main order as again.Shown in figure 12, after 58 conversions of image register, the order that reads promptly becomes P0, P3, P8, P2, P7 and P12.In addition, in this embodiment,, and export crooked profile because the result who scans out can be also nonopiate because of scanning linear and object profile.The present invention can utilize image register 58 to arrange the pixel data that reads again, to improve above-mentioned phenomenon.
See also Figure 13, Figure 13 is the sketch map of cmos image sensor 7 according to another embodiment of the present invention.Shown in figure 13, cmos image sensor 7 comprises a pixel-array unit 70, a row driver element 72, a logical circuit 74 and a reading circuit 76.Row driver element 72 and reading circuit 76 electrically connect with pixel-array unit 70 respectively, and logical circuit 74 electrically connects with reading circuit 76.
Pixel-array unit 70 is in order to sensing one object (not being illustrated among the figure) or its motion track.In this embodiment, pixel-array unit 70 comprises M pixel 700, and wherein, M is a positive integer.In addition, pixel 700 can absorb the light that is reflected from an object, and converts the light that is absorbed into a signal of telecommunication.Pixel 700 is generally the structure with transistor and photodiode.What need explanation is that the architectural feature of pixel 700 and action principle repeat no more at this for those skilled in the art can reach easily.
See also Figure 14 and Figure 15, Figure 14 is the sketch map that the pixel-array unit 70 among Figure 13 has a 3*3 picture element matrix, and Figure 15 is the circuit diagram of the cmos image sensor 7 among Figure 14.The 3*3 picture element matrix that below utilizes Figure 14 and Figure 15 and illustrated is explained technical characterictic of the present invention.
Use objects (not being illustrated among the figure) such as finger, pointer when one has the enterprising line operate of photoelectric type navigation system (not being illustrated among the figure) of cmos image sensor 7 as the user, pixel-array unit 70 promptly can sense this object or its motion track.Then, 74 object or its motion tracks that sensed according to pixel-array unit 70 of logical circuit calculate corresponding sensing region 704.Shown in figure 14; Sensing region 704 comprises five pixels (also being that above-mentioned N equals 5); Be P1, P2, P5, P6 and P9; Wherein pixel P1, P2 are arranged in first row of sensing region 704, and pixel P5, P6 are arranged in the secondary series of sensing region 704, and pixel P9 is arranged in the 3rd row of sensing region 704.Then, logical circuit 74 calculates first pixel and last pixel of each row that is arranged in sensing region 704.Shown in figure 14; First pixel of in the sensing region 704 first row is that P1 and last pixel are P2; First pixel of secondary series in the sensing region 704 is that P5 and last pixel are P6, and tertial first pixel and last pixel in the sensing region 704 are all P9.Then, logical circuit 74 control reading circuits 76 read to last pixel in order to classify main order as from first pixel of each row, with five signals that pixel was produced in the output sensing region 704.In this embodiment, the output of five pixels in the sensing region 704 is P1, P2, P5, P6, P9 in proper order.
In this embodiment, sensing region 704 can change, and can set according to when start self-correction result.In addition,, complicate for avoiding follow-up algorithm when object or its motion track when being irregularly shaped, logical circuit 74 can calculate one comprise object or its motion track parallelogram, with as sensing region.
What need explanation is, because the sensing region 704 among Figure 14 exceeds the entity area of pixel-array unit 70, can make each time that scans unfixing, and increase the calculating of time for exposure.At this moment, reading circuit 76 of the present invention can be when reads pixel data, adds virtual pixel in the part that exceeds, and scans the time at every turn and fixes to keep, and then simplify the time for exposure and calculate.See also Figure 16, Figure 16 is the sketch map that the sensing region 704 among Figure 14 adds a virtual pixel P10.Shown in figure 16, after adding virtual pixel P10, the pixel in the sensing region 704 is arranged and is a parallelogram, and each row all comprises the pixel of equal number, can keep the fixing time that scans thus.At this moment, tertial first pixel in the sensing region 704 is that P9 and last pixel are virtual pixel P10.
See also Figure 17, Figure 17 be according to another embodiment of the present invention sensing region 704 ' sketch map.Except above-mentioned parallelogram, the present invention is through after the suitable setting, reading circuit 76 also can read and export sensing region shown in figure 17 704 ' pixel data.What need explanation is; Because sensing region 704 ' in secondary series, comprise six pixel P10, P11, P12 and P14, P15, P16; And pixel P10, P11, P12 and pixel P14, P15, P16 are discontinuous; At this moment; Logical circuit 74 is first pixel and last pixel among calculating pixel P10, P11, P12 and pixel P14, P15, the P16 respectively, also is that first pixel among pixel P10, P11, the P12 is that P10 and last pixel are P12, and first pixel among the pixel P14, P15, P16 is that P14 and last pixel are P16.Therefore, for secondary series shown in Figure 17, reading circuit 76 can read to last pixel P12 from first pixel P10 earlier in regular turn, reads to last pixel P16 in regular turn from first pixel of another one P14 again.In other words, the pixel that reading circuit 76 is read in same row can be continuous or discontinuous, and visual sense is surveyed the scope that is contained in the zone and decided.
See also Figure 18, Figure 18 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.Please consult Figure 13 to Figure 15 in the lump, cooperate above-mentioned cmos image sensor 7, the method for operation of cmos image sensor of the present invention comprises the following step:
Step S300: through pixel-array unit 70 sensing articles or its motion track;
Step S302: calculate should object or the sensing region 704 of its motion track;
Step S304: produce array selecting signal, with the pixel output signal that it was produced in the control pixel-array unit 70;
Step S306: first pixel and last pixel of calculating each row that is arranged in sensing region 704;
Step S308: read to last pixel from first pixel of each row in order to classify main order as; And
Step S310: the signal that pixel P1, P2, P5, P6, P9 produced of output sensing region 704.
See also Figure 19, Figure 19 is the flow chart of the method for operation of cmos image sensor according to another embodiment of the present invention.Please consult Figure 16 in the lump, cooperate above-mentioned cmos image sensor 7, if sensing region 704 exceeds the entity area of pixel-array unit 70, the method for operation of cmos image sensor then of the present invention can comprise the following step:
Step S400: through pixel-array unit 70 sensing articles or its motion track;
Step S402: calculate should object or the sensing region 704 of its motion track;
Step S404: produce array selecting signal, with the pixel output signal that it was produced in the control pixel-array unit 70;
Step S406: judge whether sensing region 704 exceeds the entity area of pixel-array unit 70, if, execution in step S408 then, if not, execution in step S410 then;
Step S408: add virtual pixel P10 in the part that exceeds;
Step S410: first pixel and last pixel of calculating each row that is arranged in sensing region 704;
Step S412: read to last pixel from first pixel of each row in order to classify main order as; And
Step S414: the signal that pixel P1, P2, P5, P6, P9 produced of output sensing region 704 and virtual pixel P10 (if having).
Than prior art, the present invention utilizes the output of multiplexer control pixel data, makes logical circuit to define the scanning linear slope that each bar array selecting signal is chosen through the control multiplexer.In addition, the present invention also can be earlier reads the pixel data in the sensing region in order to behavior master's order, again through the image register adopting with the data transaction of behavior master's order output to classify main order as.Moreover; The present invention also can increase by a logical circuit at reading circuit; With starting point (being first pixel) and terminal point (being last pixel) according to each row in the object that senses or its motion track calculating sensing region, and then the pixel data of control reading circuit output sensing region.Because the present invention only need be with the output of the pixel data in the sensing region of corresponding object or its motion track, so can significantly reduce system operation frequency and power consumption.In addition, when logical circuit judged that sensing region exceeds the entity area of pixel-array unit, reading circuit can add virtual pixel in the part that exceeds, and scanned the time at every turn and fixed to keep, and then simplify the time for exposure and calculate.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (5)
1. a complementary MOS image sensor is characterized in that, said image sensor comprises:
One pixel-array unit; In order to sensing one object, said pixel-array unit comprises M pixel and P multiplexer, each in the said M pixel respectively with one of them electric connection of a said P multiplexer; M is a positive integer, and P one is less than or equal to the positive integer of M;
One row driver element electrically connects with said P multiplexer, in order to produce an array selecting signal;
One logical circuit; Electrically connect with said P multiplexer; In order to calculate a sensing region of corresponding said object, said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M; Said logical circuit and said array selecting signal is supplied to a said N pixel in order to Q multiplexer of control and the electric connection of said N pixel, Q are one to be less than or equal to N and to be less than or equal to the positive integer of P; And,
One reading circuit electrically connects with said pixel-array unit.
2. complementary MOS image sensor as claimed in claim 1; It is characterized in that; Said reading circuit is in order to classify said N the signal that pixel produced that main order reads said sensing region as; And when said sensing region exceeded an entity area of said pixel-array unit, said reading circuit added at least one virtual pixel in the part that exceeds, and said sensing region is a parallelogram.
3. complementary MOS image sensor as claimed in claim 1; It is characterized in that; As P during less than M; At least two pixels in the said M pixel are electrically connected to a multiplexer in the said P multiplexer simultaneously, and said at least two pixels are arranged in the different rows and the same row of said pixel-array unit.
4. a complementary MOS image sensor is characterized in that, said image sensor comprises:
One pixel-array unit, in order to sensing one object, said pixel-array unit comprises M pixel, M is a positive integer;
One row driver element electrically connects with said pixel-array unit, and in order to produce an array selecting signal, said array selecting signal is controlled said M the pixel output signal that it produced;
One reading circuit electrically connects with said pixel-array unit, in order to read a said M signal that pixel produced; And
One logical circuit; Electrically connect with said reading circuit; In order to calculate a sensing region of corresponding said object; Said sensing region comprises N pixel in the said M pixel, and N one is less than or equal to the positive integer of M, and said logical circuit calculates first pixel and last pixel of each row that is arranged in said sensing region; And control said reading circuit and read to said last pixel from said first pixel of each row, to export a said N signal that pixel was produced in order to classify main order as.
5. complementary MOS image sensor as claimed in claim 4; It is characterized in that; When said sensing region exceeds an entity area of said pixel-array unit; Said reading circuit adds at least one virtual pixel in the part that exceeds, and said sensing region is a parallelogram.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210202606.4A CN102752562B (en) | 2009-11-04 | 2009-11-04 | The method of operation of complementary MOS image sensor |
| CN2009102123151A CN102055919B (en) | 2009-11-04 | 2009-11-04 | Complementary metal oxide semiconductor (CMOS) image sensor and operation method thereof |
Applications Claiming Priority (1)
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| CN1953158A (en) * | 2005-10-20 | 2007-04-25 | 原相科技股份有限公司 | Method for fabricating cmos image sensor |
| WO2009066092A1 (en) * | 2007-11-19 | 2009-05-28 | Selex Sensors And Airborne Systems Limited | Imaging device and method |
| CN101751165A (en) * | 2008-11-28 | 2010-06-23 | 原相科技股份有限公司 | Touch-control system and method thereof for obtaining location of referent |
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| US7709777B2 (en) * | 2003-06-16 | 2010-05-04 | Micron Technology, Inc. | Pumps for CMOS imagers |
| US7859581B2 (en) * | 2003-07-15 | 2010-12-28 | Eastman Kodak Company | Image sensor with charge binning and dual channel readout |
| US7876980B2 (en) * | 2004-11-11 | 2011-01-25 | Panasonic Corporation | Imaging apparatus and imaging method for outputting a specified number of pixels in a specified area |
| US20080100725A1 (en) * | 2006-10-27 | 2008-05-01 | Abadeer Wagdi W | Circuits for enhancing yield and performance of cmos imaging sensors |
| KR100997299B1 (en) * | 2007-09-07 | 2010-11-29 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing Thereof |
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| CN1953158A (en) * | 2005-10-20 | 2007-04-25 | 原相科技股份有限公司 | Method for fabricating cmos image sensor |
| WO2009066092A1 (en) * | 2007-11-19 | 2009-05-28 | Selex Sensors And Airborne Systems Limited | Imaging device and method |
| CN101751165A (en) * | 2008-11-28 | 2010-06-23 | 原相科技股份有限公司 | Touch-control system and method thereof for obtaining location of referent |
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| CN102752562B (en) | 2015-09-02 |
| CN102055919A (en) | 2011-05-11 |
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