CN102751380A - Texturization technology of solar battery - Google Patents
Texturization technology of solar battery Download PDFInfo
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- CN102751380A CN102751380A CN2012102061871A CN201210206187A CN102751380A CN 102751380 A CN102751380 A CN 102751380A CN 2012102061871 A CN2012102061871 A CN 2012102061871A CN 201210206187 A CN201210206187 A CN 201210206187A CN 102751380 A CN102751380 A CN 102751380A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a texturization technology of a solar battery, which adopts reactive ion etching, and comprises the following steps of: a. selecting the radio-frequency power of 25-30Kw, filling gases including Cl2, SF6 and O2 into a reaction cavity, and carrying out plasma bombardment on the surface of a silicon slice, wherein the technology time is 60-80s; b. selecting the radio-frequency power of 12-18Kw, filling gases including Cl2 and SF6 into the reaction cavity, and carrying out plasma bombardment on the surface of the silicon slice, wherein the technology time is 20-30s; and c. cleaning the silicon slice etched in the step by mixed liquid of HF, HNO3 and CH3COOH. Based on the original reactive ion etching (RIE) technology, one-step low radio-frequency power etching can be added, the plasma bombardment is carried out on the surface of the silicon slice, and the gases including Cl2 and SF6 are only filled in the process, so that Cl2 and SF6 have the function of effectively etching a damaged layer under the condition of low power radio frequency since the gas of O2 does not exist; and therefore, on the premise of guaranteeing the open-circuit voltage, the short-circuit current is improved, and higher component efficiency can be obtained.
Description
Technical field
The present invention relates to technical field of solar cells, especially a kind of process for etching that reduces the solar cell of etching technics affected layer.
Background technology
Reactive ion etching (Reactive Ion Etching is called for short RIE) is the rational ion bombardment of bond and the etching of chemical reaction.This kind mode has two-fold advantage such as anisotropic and high etching selectivity concurrently, and etched carrying out mainly reached by chemical reaction, to obtain high selectivity.The effect that adds ion bombardment has two: one, the atomic bond knot that is etched material surface is destroyed, with accelerated reaction speed.The 2nd, destroy being deposited on the product or the polymer (Polymer) that are etched the surface again, contact with etching gas again so that be etched surface energy.And reaching of anisotropic etching then is to lean on the product or the polymer of deposition again, is deposited on the etched figure; Deposit on the surface can be ion and destroys, so etching can be proceeded and the deposit on sidewall; Because of not remained by the ion bombardment; Intercepted contacting of etched surfaces and reacting gas, made the sidewall not to be subjected to etching, and obtain anisotropic etching.Can obtain low-down reflectivity through adjustment gas flow and radio-frequency power, thereby can be applicable on the process for etching of polycrystalline solar cell.And the general RF power of existing RIE process for etching higher (> 20KW), plasma bombardment silicon chip surface under high power conditions causes affected layer, and this affected layer can cause battery open circuit voltage (Voc) to reduce, and is very big to the component power influence.This affected layer is to use the chemical liquid cleaning and removing to remove at present, sharply raises (generally>16%) but clean the back surface reflectivity through chemical liquid, and the battery short circuit current gain is not obvious, can't embody the advantage of RIE antiradar reflectivity.RIE technology commonly used at present generally has only a process steps, through CL
2, SF
6, O
2Etching reaction and the bombardment of plasma prepare suede structure less than 1um.In volume production,, all use high RF power (> 25KW for guaranteeing production capacity) with the lifting etch rate, but high RF power will cause high affected layer, cause the open circuit voltage loss.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency in the prior art; A kind of process for etching of solar cell is provided, through optimizing reactive ion etching and follow-up cleaning, on the basis that keeps open circuit voltage; Reduce reflectivity, improve short circuit current.
The technical solution adopted for the present invention to solve the technical problems is: a kind of process for etching of solar cell, adopt reactive ion etching, and have following steps: a, to select radio-frequency power for use be 25～30Kw, in reaction chamber, feeds CL
2, SF
6And O
2Gas carries out plasma bombardment to silicon chip surface, and the process time is 60～80s; B, to select radio-frequency power for use be 12～18Kw, in reaction chamber, feeds CL
2And SF
6Gas carries out plasma bombardment to silicon chip surface, and the process time is 20～30s; C, use HF, HNO
3And CH
3The mixed liquor of COOH, to cleaning through the silicon chip after the step b etching, the reflectivity that makes cleaning back silicon chip is less than 14%.
Preferably, the radio-frequency power of being selected for use among the step a is 27Kw, and the radio-frequency power of being selected for use among the step b is 15Kw.
The invention has the beneficial effects as follows: the present invention has increased the etching of a step low radio frequency power on original RIE technology basis, silicon chip surface is carried out plasma bombardment, and in this process, only feed CL
2And SF
6Gas is not owing to exist O
2Gas, CL
2And SF
6Under the low-power radio frequency condition, will play the effect of effective etching injury layer, thereby can under the prerequisite that guarantees open circuit voltage, improve short circuit current, obtain higher component efficiency.
Embodiment
A kind of process for etching of solar cell has following steps:
A, to select radio-frequency power for use be 27Kw, in reaction chamber, feeds Cl
2, SF
6And O
2Gas, gas ratio are Cl
2: SF
6: O
2=1:2:2 carries out plasma bombardment to silicon chip surface, and the process time is 70s;
B, to select radio-frequency power for use be 15Kw, in reaction chamber, feeds CL
2And SF
6Gas, gas ratio are Cl
2: SF
6=1:2 carries out plasma bombardment to silicon chip surface, and the process time is 25s;
C, use HF, HNO
3And CH
3The mixed liquor of COOH, the mixed liquor proportioning is: HF:HNO
3: CH
3COOH=1:13:8, to cleaning through the silicon chip after the step b etching, the reflectivity that makes cleaning back silicon chip is less than 14%.
Process time among step a and the step b and gas flow can be according to reflectivity and uniformity adjustment, and control RIE back reflection rate is less than 8%.
Through behind the step a, also have a lot of accessory substances on the matte of silicon chip surface, and through behind the step b, the accessory substance on the matte is removed, and obtains slick and sly suede structure, again through cleaning, further remove affected layer and obtain desirable suede structure.
In the above-mentioned steps, because the one step b technology that increases has adopted low-power that silicon chip surface is carried out plasma bombardment, and in this process, only fed CL
2And SF
6Gas is not owing to exist O
2Gas, CL
2And SF
6Under the low-power radio frequency condition, will play the effect of effective etching injury layer; Adopt chemical liquid to clean through step c again, make silicon chip obtain lower reflectivity, thereby guaranteeing under the prerequisite that open circuit voltage does not reduce; Obtain higher electric current, improve the assembly operating efficiency.
The foregoing description only is explanation technical conceive of the present invention and characteristics; Its purpose is to let the personage that is familiar with this technology can understand content of the present invention and implements; Can not limit protection scope of the present invention with this; All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (2)
1. the process for etching of a solar cell adopts reactive ion etching, it is characterized in that: have following steps: a, to select radio-frequency power for use be 25～30Kw, in reaction chamber, feeds CL
2, SF
6And O
2Gas carries out plasma bombardment to silicon chip surface, and the process time is 60～80s; B, to select radio-frequency power for use be 12～18Kw, in reaction chamber, feeds CL
2And SF
6Gas carries out plasma bombardment to silicon chip surface, and the process time is 20～30s; C, use HF, HNO
3And CH
3The mixed liquor of COOH, to cleaning through the silicon chip after the step b etching, the reflectivity that makes cleaning back silicon chip is less than 14%.
2. the process for etching of solar cell according to claim 1, it is characterized in that: the radio-frequency power among the said step a is 27Kw, radio-frequency power is 15Kw among the step b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102061871A CN102751380A (en) | 2012-06-20 | 2012-06-20 | Texturization technology of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102061871A CN102751380A (en) | 2012-06-20 | 2012-06-20 | Texturization technology of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102751380A true CN102751380A (en) | 2012-10-24 |
Family
ID=47031407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102061871A Pending CN102751380A (en) | 2012-06-20 | 2012-06-20 | Texturization technology of solar battery |
Country Status (1)
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| CN (1) | CN102751380A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| CN105702760A (en) * | 2016-04-11 | 2016-06-22 | 徐州同鑫光电科技股份有限公司 | Fabrication method for texture surface of solar cell |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
| CN107623055A (en) * | 2017-09-27 | 2018-01-23 | 晶科能源有限公司 | A kind of preparation method of quasi- single crystal battery |
| CN107946378A (en) * | 2016-10-12 | 2018-04-20 | 英属开曼群岛商精曜有限公司 | Solar battery structure |
| CN108385168A (en) * | 2018-02-27 | 2018-08-10 | 浙江晶科能源有限公司 | A kind of method of surface of crystalline silicon making herbs into wool |
| CN109449250A (en) * | 2018-10-22 | 2019-03-08 | 常州比太黑硅科技有限公司 | A kind of safely controllable solar silicon wafers RIE process for etching |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070128761A1 (en) * | 2005-11-29 | 2007-06-07 | Kyocera Corporation | Manufacturing Method of Solar Cell Element |
| CN102364697A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for removing micro-damage layer from crystalline silicon surface after RIE (Reactive Ion Etching) flocking |
| CN102403397A (en) * | 2010-09-10 | 2012-04-04 | 金炳埈 | Surface processing method of silicon substrate for solar cell, and manufacturing method of solar cell |
-
2012
- 2012-06-20 CN CN2012102061871A patent/CN102751380A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070128761A1 (en) * | 2005-11-29 | 2007-06-07 | Kyocera Corporation | Manufacturing Method of Solar Cell Element |
| CN102403397A (en) * | 2010-09-10 | 2012-04-04 | 金炳埈 | Surface processing method of silicon substrate for solar cell, and manufacturing method of solar cell |
| CN102364697A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for removing micro-damage layer from crystalline silicon surface after RIE (Reactive Ion Etching) flocking |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806105A (en) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | Coating source diffusion method capable of improving diffusion property |
| CN103861843A (en) * | 2012-12-12 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber cleaning method and substrate etching method |
| CN103861843B (en) * | 2012-12-12 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The cleaning method of reaction chamber and substrate lithographic method |
| CN105702760A (en) * | 2016-04-11 | 2016-06-22 | 徐州同鑫光电科技股份有限公司 | Fabrication method for texture surface of solar cell |
| CN107946378A (en) * | 2016-10-12 | 2018-04-20 | 英属开曼群岛商精曜有限公司 | Solar battery structure |
| CN107170845A (en) * | 2017-05-12 | 2017-09-15 | 中国科学院宁波材料技术与工程研究所 | A kind of wet method prepares the pyramidal method of corners |
| CN107623055A (en) * | 2017-09-27 | 2018-01-23 | 晶科能源有限公司 | A kind of preparation method of quasi- single crystal battery |
| CN108385168A (en) * | 2018-02-27 | 2018-08-10 | 浙江晶科能源有限公司 | A kind of method of surface of crystalline silicon making herbs into wool |
| CN109449250A (en) * | 2018-10-22 | 2019-03-08 | 常州比太黑硅科技有限公司 | A kind of safely controllable solar silicon wafers RIE process for etching |
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Application publication date: 20121024 |