CN102749167B - Pressure sensor encapsulation structure containing silicon through holes - Google Patents
Pressure sensor encapsulation structure containing silicon through holes Download PDFInfo
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- CN102749167B CN102749167B CN201210210744.7A CN201210210744A CN102749167B CN 102749167 B CN102749167 B CN 102749167B CN 201210210744 A CN201210210744 A CN 201210210744A CN 102749167 B CN102749167 B CN 102749167B
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Abstract
The invention provides a pressure sensor encapsulation structure containing silicon through holes, which uses a silicon base to substitute a traditional boron-phosphorosilicate glass base, and adopts a flip chip bonding technology and a bonding technology (such as CuSn bonding, AuSn eutectic bonding, Cu-Cu bonding and Au-Au bonding) to realize the airtight vacuum encapsulation of pressure sensors; a monocycle or bi-cycle bonding metal ring is adopted for encapsulation, and plays the role of reducing the bonding stress on the encapsulation of the pressure sensors with different piezoresistance strip distribution under the condition of ensuring the measurement sensitivity; and conductive columns are adopted for replacing metal wires to be used as signal lead wires, so the mutual connection reliability is increased. Compared with encapsulation structures of the silicon glass electrostatic bonding technology, the metal wire bonding technology, the metal isolating membrane technology and the airtight cavity silicone oil filling technology which are adopted traditionally, the pressure sensor encapsulation structure cancelled silicone oil filling and the metal isolating membrane, contributes to the improvement in the pressure sensor sensitivity, can also be used for dynamic pressure detection, and has the advantages of small size and high integration level.
Description
Technical field
The present invention relates to a kind of pressure sensor packaging structure that contains silicon through hole, belong to micro-electronic mechanical skill field.
Background technology
Pressure transducer is widely used in fields such as the consumer electronics industry, Automobile Electronic Industry, petrochemical complex department, Aero-Space departments at present, the inefficacy of pressure transducer and fault are many because package failure causes, are encapsulated into the gordian technique that realizes pressure sensor application.Pressure transducer Vacuum Package often adopts Can, metal isolation diaphragm, metab, charges silicone oil, Wire Bonding Technology, utilizes solder technology that Can, metal isolation diaphragm and the welding of metal base are formed to airtight cavity; Utilize electrostatic bonding or gold-silicon eutectic bonding technology, pressure transducer is passed through to boron-phosphorosilicate glass sealing-in on metal base; And charge silicone oil in airtight cavity between metal isolation diaphragm and pressure transducer, by metal isolation diaphragm and silicone oil, ambient pressure is delivered on pressure transducer; Signal is drawn main employing Wire Bonding Technology.There is certain limitation in this type of encapsulating structure: 1, process costs is high, welding gear costliness; 2, encapsulation volume is large, is unfavorable for lightness, slimming, the miniaturization of product; 3, between silicone oil and chip, coefficient of thermal expansion mismatch easily affects pressure measurement accuracy; 4, the non-impermeability in sealing-in easily causes oil impregnate, leakage of oil, damages pressure transducer; 5, charging more or less of silicone oil can introducing portion pressure error; 6, the metal wire of Bonding and pad are easily subject to high concussion, the fatigue failure of high speed pressure circulation environment.
Recently, Kulite company has produced for high reliability under high-temperature severe environment, high precision, small size, the SOI pressure transducer that can carry out Static and dynamic measurement, its encapsulation adopts novel lead-free encapsulation, by pressure sensor chip face-down bonding non-conductive on glass, wherein non-conductive glass metal contact jaw has through-hole interconnection, wherein be filled with high-temperature electric conduction metal-glass powder, directly embed glass with the pin of conducting resinl, realize the good electrical interconnection of pin and sensor chip.This encapsulation scheme, without charging silicone oil, can ensure air-tight packaging, adapts to multiple application, if environment on silicon or glass material without impact, such encapsulating structure even can be for the microminiature pressure transducer as conductive fluid; But such encapsulation needs to adopt special material and special process, and cost is high, makes difficulty.How can complete high performance pressure sensor package by simple process is the direction that is worth research.
Summary of the invention
For addressing the above problem, the present invention proposes a kind of pressure sensor packaging structure that contains silicon through hole, replace traditional boron-phosphorosilicate glass pedestal with silicon submount, adopt face-down bonding technique, bonding techniques (as CuSn bonding, AuSn eutectic bonding, Cu-Cu bonding, Au-Au bonding etc.) to realize the impermeability Vacuum Package of pressure transducer, this structure can adherence pressure transducer sensitivity, and can detect for dynamic pressure, have advantages of that volume is little, integrated level is high.
Technical scheme of the present invention is as follows:
A pressure sensor packaging structure that contains silicon through hole, comprises silicon submount and pressure sensor chip, is provided with through hole on silicon submount, is filled with conductive material (as Cu, W etc.) and forms conductive pole, as metal interconnecting wires in it; Conductive pole upper surface preparation conduction dimpling point (as AuSn dimpling point, CuSn dimpling point etc.), as the contact point of Bonding pressure sensor chip signal; The outer bonding becket that is with a circle airtight material formation (as AuSn, CuSn etc.) of described conduction dimpling point, for realizing local air-tight packaging; Described pressure sensor chip back bonding is on described silicon submount.
Described preparation conduction dimpling point can adopt electroplating technology or chemical plating process.Described silicon submount middle part is a cavity, is beneficial to pressure sensor chip back bonding, is beneficial to reducing of stress simultaneously.
It is peripheral that described bonding becket is distributed in lead to the hole site conduction dimpling point, is positioned at the position near silicon submount peripheral edge.
Described bonding becket is also distributed in lead to the hole site conduction dimpling point and encloses, and is positioned near silicon submount concave groove edge.
On described pressure sensor chip, be provided with silicon pressure drag bar, for only there being peripheral keys to close the situation of becket, described silicon pressure drag bar is distributed in the position that is less than 100 μ m near the silicon fiml edge horizontal range of pressure transducer.
On described pressure sensor chip, be provided with silicon pressure drag bar, for the situation that has inside and outside bonding becket, described silicon pressure drag bar is distributed in the position near silicon fiml edge horizontal range 100 ~ 200 μ m of pressure transducer.
The bonding entirety of described pressure sensor chip and silicon submount is directly assemblied on substrate and (as pcb board, silicon substrate, ltcc substrate etc., is generally atresia substrate) by solder ball technologies.
The bonding entirety of described pressure sensor chip and silicon submount adopts bonding techniques to be assemblied in (as silicon card extender, LTCC card extender, PCB etc.) on card extender, utilize card extender integrated with substrate again as transition, or directly utilize card extender as electrical interconnection substrate.
Described card extender is provided with through hole, and filled conductive material in it forms conductive pole; Conductive pole upper surface adopts electroplating technology/chemical plating process/lift-off technology to prepare metal redistribution layer (as Cu metal redistribution layer, Al metal redistribution layer etc.).This metal redistribution layer is layer of metal line, and its lower surface and silicon card extender contact position have insulation barrier.
The metal redistribution layer other end of described card extender is connected by conduction dimpling point with silicon submount, and the lower surface of described conductive pole is connected by large soldered ball with substrate.
Can integrated treatment circuit on described silicon card extender and substrate, be conducive to reduce ghost effect, promote transducer sensitivity.
Compared with prior art, beneficial effect of the present invention shows:
1, the present invention adopts si-glass electrostatic bonding technology, metal lead wire bonding techniques, metal barrier film technology and closed chamber to charge the encapsulating structure of silicone oil technology with respect to tradition, cancel and charged silicone oil and metal barrier film, simplify encapsulating structure, encapsulation volume and weight are reduced, increase measurement sensitivity, and can be for pressure detection of dynamic; Adopt filled conductive material substitution metal lead wire in through hole as signal extension line, can increase interlinking reliability.
2, the SOI pressure transducer novel lead-free encapsulating structure of filling high-conductive metal-glass powder in non-conductive glass that the present invention proposes with respect to Kulite company, without adopting special material and special process, adopt electroplating technology filled conductive metal material in silicon through hole to realize interconnection.
3, the present invention adopts the bonding becket encapsulation of monocycle and dicyclic airtight material, and in the situation that ensureing measurement sensitivity, the pressure sensor package distributing for different pressure drag bars has played the effect that reduces bonding stress; Cancel the use of filling glue simultaneously, adopted becket structure, be conducive to realize local impermeability.
4, pressure sensor packaging structure of the present invention, can promote in conjunction with three-dimension packaging the integrated level of sensor.
5, silicon through hole, after filling, can play fixing effect, does the used time when sensor is subject to Transfer Medium impressed pressure, can effectively reduce the disturbing effect of dovetail groove inclined-plane to silicon fiml deformation; Movable electrode is drawn by vertical interconnecting through-hole, has effectively reduced the loss of capacitance signal in transmitting procedure, thereby measures more accurate signal.Adopt the sensor of manufacture of the present invention to there is the advantages such as precision is high, the linearity is good, be applicable to high-precision pressure survey field.
Brief description of the drawings
Fig. 1 is monocyclic bonding becket encapsulating structure schematic top plan view of the present invention;
Fig. 2 is dicyclic bonding becket encapsulating structure schematic top plan view of the present invention;
Fig. 3 is the structural representation of the embodiment of the present invention one;
Fig. 4 is the structural representation of the embodiment of the present invention two;
Fig. 5 is the structural representation of the embodiment of the present invention three;
Fig. 6 is the structural representation of the embodiment of the present invention four;
Wherein, 1-pressure sensor chip; 2-insulation barrier; 3-silicon pressure drag bar; 4-through hole; 5-silicon submount; 6-bonding becket; 7-conduction dimpling point; 8-UBM; 9-soldered ball; 10-substrate; 11-metal redistribution layer; 12-card extender; 13-silicon fiml; 14-concave groove.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 has the monocyclic bonding becket encapsulating structure schematic top plan view that peripheral keys alloy belongs to ring structure, corresponding to the A-A view in Fig. 3; Fig. 2 has inside and outside dicyclic bonding becket encapsulating structure schematic top plan view of enclosing bonding becket structure, corresponding to the A-A view in Fig. 4.
Embodiment mono-:
As shown in Figure 3, to silicon submount 5, from the back side to front, in the silicon blind hole of the position of corresponding SOI pressure sensor chip 1 data-signal port employing DRIE technique etching depth approximately 100 ~ 200 μ m, (wherein DRIE technological parameter is: SF in the present invention
6gas flow 130sccm, C
4f
8gas flow 100sccm, microscope carrier power is 600W, automatic pressure control APC selects 60, every etching 9s post-passivation 7s, etch rate approximately 2 μ m/min(design parameters and etching area are closely related)); Hot oxygen forms the thick SiO of 2 μ m
2insulative sidewall or deposit SiNx, magnetron sputtering deposit
adhesion layer
restraining barrier W, forms insulation barrier 2, simultaneously in blind hole sidewall sputter 1 ~ 2 μ m Seed Layer, and wherein seed layer materials consistent with silicon blind hole filled conductive material (under normal circumstances, Seed Layer is thicker, and filled conductive material grains is less, and filling effect is better); Realizing silicon blind hole by parameters such as control current density, additives ratio, electroplating times fills without empty conductive material, (currently used electroplate liquid is SINYANG ADDITIVE UPT3320 model pyrovinic acid system plating solution, wherein contains adjuvant UPT3320A, inhibitor UPT3320S, UPT3320L to form conductive pole; It is 0.1 ~ 2.5 that this electroplate liquid current density ASD can arrange scope, it is 20 ~ 30 DEG C that temperature arranges scope, concrete electroplating time calculates according to electroplating area and electroplating thickness), adopt plating or chemical plating process to prepare UBM8 structure, erosion removal surface adhesion layer Ti/ restraining barrier W/ Seed Layer subsequently in the conductive pole port at silicon submount 5 back sides simultaneously; Silicon submount 5 back sides and the interim bonding of glass, (wherein the polishing of silicon materials employing principal ingredient is Al to the positive CMP attenuated polishing to silicon submount 5
2o
3lapping liquid, equipment adopts domestic UNIPOL-1202 equipment, polishing fluid dropping liquid speed is 250ml/hr, pressure is 0.05MPa, and slew rate is 10 times/min, and the amplitude of oscillation is 30 °, rotating speed is 20r/min, and lapping liquid proportioning is abrasive material: water=1:3, polishing time border thickness thinning and determining factually; The polishing of copper product can adopt acid polishing slurry, main acid polishing slurry oxygenant has nitric acid, sulfuric acid etc., experiment parameter is: polishing fluid dropping liquid speed is 150ml/hr, pressure is 0.05MPa, slew rate is 10 times/min, and the amplitude of oscillation is 30 °, and rotating speed is 60r/min), until expose conductive pole, form the through hole 4 that runs through substrate; Silicon submount 5 is positive by the thick SiO of PECVD deposit 2 μ m
2insulation course or SiNx, photolithography patterning defines through hole 4 positions, and adopts RIE technique etching to remove through hole 4 SiO of place
2insulation course or SiNx; The positive deposit of silicon submount 5
adhesion layer
restraining barrier
seed Layer, electroplates in through hole 4 positions or electroless plating forms conduction dimpling point 7, and wherein dimpling dot thickness is about 5 μ m; While is in the bonding becket structure of its peripheral plating or electroless plating one ring shape, wherein the material of bonding becket 6 is airtight material, between dimpling point and becket structure, leave certain gap (limit without scope in space, as long as meet under normal circumstances dimpling point and becket structure is in base edge position); Erosion removal surface adhesion layer Ti/ restraining barrier W/ Seed Layer; The positive centre position of silicon submount 5 adopts RIE or DRIE etching concave groove 14(concrete technology method to select to depend on and the concave groove degree of depth), concave groove size should be more than or equal to pressure sensor chip 1 silicon fiml 13 sizes, and in concave groove Surface L PCVD deposit approximately 2 μ m thick dielectric layer, form final silicon submount 5 structures; By silicon submount 5 and glass solution bonding; Meanwhile, the position of pressure sensor chip 1 signal port and the 5 metallic bond cyclizations of corresponding silicon submount all needs plating or electroless plating and micro-convex point material and bonding becket material consistent on silicon submount 5, adopt back bonding technology that above-mentioned pressure sensor chip 1 is assemblied on the made silicon submount of getting ready 5, concrete back bonding technological parameter depends on back bonding material, such as CuSn bonding parameter can be set as 260 DEG C of temperature, bonding time 20min, bonding pressure 2MPa; Implant soldered balls 9 in silicon submount 5 UBM8 positions, the back side again, and be assemblied on substrate 10, wherein silicon pressure drag bar 3 is distributed in the position that is less than 100 μ m near the silicon fiml 13 edge horizontal ranges of pressure transducer, and after encapsulation in the concave groove 14 in silicon submount 5.
Embodiment bis-:
As shown in Figure 4, the embodiment of the present invention two embodiment similar embodiment one, Main Differences is the positive CMP attenuated polishing of silicon submount 5, formation runs through after the through hole 4 of substrate, electroplate in through hole 4 positions or electroless plating formation conduction dimpling point 7, simultaneously therein, peripheral both sides electroplate respectively or the bonding becket structure of electroless plating one ring shape, wherein the material of bonding becket 6 is airtight material.All the other processing steps are identical, repeat no more, and wherein silicon pressure drag bar 3 is distributed in the position near silicon fiml 13 edge horizontal range 100 ~ 200 μ m of pressure transducer, and after encapsulation in the concave groove 14 in silicon submount 5.
Embodiment tri-:
As shown in Figure 5, the embodiment of the present invention three embodiments are as follows:
Wherein the processing step of pressure sensor chip 1 back bonding on silicon submount 5 has: silicon submount 5 is adopted to the silicon blind hole of DRIE technique etching depth approximately 100 ~ 200 μ m in the position of corresponding SOI pressure sensor chip 1 data-signal port from the back side to front, the thick SiO of the 2 μ m of deposit subsequently
2or SiNx insulation course,
adhesion layer
restraining barrier W, forms insulation barrier 2,1 ~ 2 μ m Seed Layer of sputter simultaneously, and wherein seed layer materials is consistent with silicon blind hole filled conductive material; Silicon blind hole is electroplated and is formed conductive pole, adopts plating or chemical plating process to prepare UBM8 structure, erosion removal surface adhesion layer Ti/ restraining barrier W/ Seed Layer subsequently simultaneously; Silicon submount 5 back sides and the interim bonding of glass, to the positive CMP attenuated polishing of silicon submount 5, until expose conductive pole, form the through hole 4 that runs through substrate; The thick SiO of the positive deposit 2 μ m of silicon submount 5
2insulation course or SiNx, photolithography patterning defines through hole 4 positions, and adopts RIE technique etching to remove through hole 4 SiO of place
2insulation course or SiNx; The positive deposit of silicon submount 5
adhesion layer
restraining barrier
seed Layer, forms conduction dimpling point 7 in through hole 4 positions plating or electroless plating, and the while is in the bonding becket structure of its peripheral plating or electroless plating one ring shape; Erosion removal surface adhesion layer Ti/ restraining barrier W/ Seed Layer; The positive centre position of silicon submount 5 adopts RIE or DRIE etching concave groove 14(concrete technology method to select to depend on and the concave groove degree of depth), concave groove size should be more than or equal to pressure sensor chip 1 silicon fiml 13 sizes, and in concave groove Surface L PCVD deposit approximately 2 μ m thick dielectric layer, form final silicon submount 5 structures; By silicon submount 5 and glass solution bonding; Pressure sensor chip 1 treating method is identical with pressure sensor chip 1 treating method in embodiment mono-, repeats no more; Adopt subsequently back bonding technology that above-mentioned pressure sensor chip 1 is assemblied on the made silicon submount of getting ready 5.
The preparation technology at card extender 12 back sides and silicon submount 5 back side preparation technologies are similar, repeat no more; Card extender 12 back sides machine rear and the interim bonding of glass, to the positive CMP attenuated polishing of card extender 12, until expose conductive pole, form the through hole 4 that runs through substrate; The thick SiO of the positive deposit 2 μ m of card extender 12 subsequently
2or SiNx insulation course, litho pattern dissolves through hole 4 positions and metal redistribution layer 11 positions, wherein region between the through hole 4 on through hole 4 and the card extender 12 of metal redistribution layer 11 on silicon submount 5, and metal redistribution layer line thickness is more than or equal to 20 μ m; The SiO at through hole 4 and metal redistribution layer 11 places on RIE etching removal card extender
2insulation course or SiNx; The positive deposit of card extender 12
adhesion layer
restraining barrier
seed Layer, adopts electroplating technology/chemical plating process/lift-off technology to prepare metal redistribution layer 11, and metal redistribution layer 11 thickness depend on signal frequency; On corresponding silicon submount 5, the position of through hole 4 adopts electroplating technology or chemical plating process to prepare dimpling point; Adopt bonding technology to be assemblied on card extender 12 the bonding entirety of pressure sensor chip 1 and silicon submount 5; Wherein can implant soldered ball 9 at card extender 12 UBM8 places, the back side, refill and be fitted on substrate 10; Or prepare signal wire at card extender 12 back sides, directly using card extender 12 as electrical interconnection substrate 10.
Embodiment tetra-:
As shown in Figure 6, the embodiment of the present invention four embodiment similar embodiment three, Main Differences is the positive CMP attenuated polishing of silicon submount 5, formation runs through after the through hole 4 of substrate, electroplate in through hole 4 positions or electroless plating formation conduction dimpling point 7, simultaneously therein, peripheral both sides electroplate respectively or the bonding becket structure of electroless plating one ring shape, wherein the material of bonding becket 6 is airtight material.All the other processing steps are identical, repeat no more.
Claims (8)
1. a pressure sensor packaging structure that contains silicon through hole, is characterized in that, comprises silicon submount and pressure sensor chip, is provided with through hole on silicon submount, is filled with conductive material in it, forms conductive pole; Conductive pole upper surface preparation conduction dimpling point; The outer bonding becket that is with a circle airtight material formation of described conduction dimpling point; Described pressure sensor chip back bonding is on described silicon submount.
2. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 1, is characterized in that, described silicon submount middle part is a cavity.
3. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 1, is characterized in that, described bonding becket is positioned at the position near silicon submount peripheral edge.
4. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 3, is characterized in that, described bonding becket is also distributed in lead to the hole site conduction dimpling point and encloses, and is positioned near silicon submount concave groove edge.
5. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 1, is characterized in that, the bonding entirety of described pressure sensor chip and silicon submount is directly assemblied on substrate by soldered ball implanted prosthetics.
6. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 1, it is characterized in that, structure of the present invention also comprises card extender, the bonding entirety of described pressure sensor chip and silicon submount utilizes card extender integrated as transition and substrate, or directly utilizes card extender as electrical interconnection substrate.
7. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 6, is characterized in that, described card extender is provided with through hole, and filled conductive material in it forms conductive pole; Conductive pole upper surface adopts electroplating technology/chemical plating process/lift-off technology to prepare metal redistribution layer, and conductive pole lower surface and silicon card extender contact position have insulation barrier.
8. the pressure sensor packaging structure that contains silicon through hole as claimed in claim 6, is characterized in that, the metal redistribution layer other end of described card extender is connected by conduction dimpling point with silicon submount, and the lower surface of described conductive pole is connected by large soldered ball with substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210210744.7A CN102749167B (en) | 2012-06-20 | 2012-06-20 | Pressure sensor encapsulation structure containing silicon through holes |
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|---|---|---|---|
| CN201210210744.7A CN102749167B (en) | 2012-06-20 | 2012-06-20 | Pressure sensor encapsulation structure containing silicon through holes |
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| CN102749167A CN102749167A (en) | 2012-10-24 |
| CN102749167B true CN102749167B (en) | 2014-11-05 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103172014B (en) * | 2013-03-21 | 2016-01-06 | 江苏物联网研究发展中心 | Thermopile detector and signal processing circuit encapsulating structure |
| CN103241704B (en) * | 2013-05-14 | 2015-12-23 | 清华大学 | Three-dimensional integrated sensor and preparation method thereof |
| CN103308217B (en) * | 2013-06-06 | 2015-05-20 | 清华大学 | Encapsulation structure of high-temperature pressure sensor |
| CN104406724B (en) * | 2014-12-10 | 2017-09-26 | 中国航天空气动力技术研究院 | Force cell |
| JP6665589B2 (en) * | 2016-03-02 | 2020-03-13 | オムロン株式会社 | Pressure sensor chip and pressure sensor |
| DE102016115197A1 (en) | 2016-08-16 | 2018-02-22 | Endress + Hauser Gmbh + Co. Kg | Packing for reducing a volume of a pressure measuring chamber |
| CN106468604A (en) * | 2016-09-29 | 2017-03-01 | 苏州工业园区纳米产业技术研究院有限公司 | High-temp pressure sensor and preparation method thereof |
| DE102017205244A1 (en) * | 2017-03-28 | 2018-10-04 | Robert Bosch Gmbh | Micromechanical pressure sensor and method for producing the micromechanical pressure sensor |
| CN109632121A (en) * | 2018-12-10 | 2019-04-16 | 上海交通大学 | A kind of packaging structure of temperature sensor and preparation method based on conductive through hole |
| CN109712945A (en) * | 2018-12-29 | 2019-05-03 | 华进半导体封装先导技术研发中心有限公司 | A kind of encapsulating structure of chip and exchanging structure for chip package |
| CN111141429A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Vacuum-packaged sputtering film pressure sensitive element |
| CN113483941A (en) * | 2021-06-29 | 2021-10-08 | 苏州源森特科技有限公司 | Leadless packaging dynamic pressure sensor integrated with ASIC chip |
| CN117590025B (en) * | 2024-01-19 | 2024-03-19 | 中国工程物理研究院电子工程研究所 | Piezoresistive acceleration sensor |
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