CN109632121A - A kind of packaging structure of temperature sensor and preparation method based on conductive through hole - Google Patents
A kind of packaging structure of temperature sensor and preparation method based on conductive through hole Download PDFInfo
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- CN109632121A CN109632121A CN201811506883.8A CN201811506883A CN109632121A CN 109632121 A CN109632121 A CN 109632121A CN 201811506883 A CN201811506883 A CN 201811506883A CN 109632121 A CN109632121 A CN 109632121A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
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Abstract
The present invention provides a kind of packaging structure of temperature sensor and preparation method based on conductive through hole, including insulating substrate, device, nut cap, device includes temperature-sensitive membrane, electrode, temperature-sensitive membrane is set in insulating substrate, electrode is set in temperature-sensitive membrane, nut cap is located at the top of insulating substrate, there is conductive through hole in nut cap, electrode connecting conductive through-hole, temperature-sensitive membrane is set to pass through electrode and conductive through hole and extraneous realization signal transmission, nut cap connects insulating substrate by bonding material, and nut cap and insulating substrate is made to form encapsulated space, realizes device encapsulation.Present invention has the advantage that the value of electrode measurement sensitive membrane is more nearly actual temperature value, improve the measurement accuracy of sensor, improve the response speed of sensor, signal transmission is carried out using conductivity through-hole structure simultaneously, lead transmission range is shortened, reducing wiring parasitic effect influences the measurement of temperature sensor.
Description
Technical field
The present invention relates to Profound hypothermia temperature sensor technical fields, and in particular, to a kind of temperature based on conductive through hole
Sensor-packaging structure and preparation method.
Background technique
Low-temperature measurement is widely used in the hard-core technologies such as aerospace, biologic medical, superconducting electronics, high-energy physics, the energy
Field, wherein Profound hypothermia temperature sensor occupies an important position in low-temperature measurement.Profound hypothermia temperature sensor is according to sensitivity
The resistance of film varies with temperature and changes, to generate electrical signal, realizes measurement temperature.
When carrying out temperature measurement using Profound hypothermia temperature sensor, in order to avoid environmental factor is to temperature sensor measurement
It has an impact, it is necessary to temperature sensor is packaged, realize and the reliability of temperature sensor is protected.It is existing with regard to current research
Shape, the packaged type taken are first to prepare Profound hypothermia temperature sensor chip, then according to the actual situation arrive chip package
In different shells.
Currently, Samuel Scott Courts writes articles " A on " Cryogenics " 64 (2014) 248-254
standardized CernoxTMCryogenic temperature sensor for aerospace applications ",
This article is referred to a kind of packaged type of Profound hypothermia temperature sensor.It is that sensor sensing element is integrated into substrate material first
On, sensor chip is formed, then the chip prepared is fixed on encapsulating housing, finally plus encapsulation nut cap, realizes envelope
Dress.The temperature sensor of this packaged type has two layers of material of substrate material and encapsulating housing between sensing element and external environment
Material separates, and is bonded between materials at two layers, causes the temperature sensor response time long, is unfavorable for high-frequency real-time
Monitoring, while influencing measurement accuracy.In addition the encapsulating package used is far longer than the actual size of chip, causes to encapsulate end product rule
It is very little bigger than normal, it is at high cost.This is also current Profound hypothermia temperature sensor common problem.
Summary of the invention
For the defects in the prior art, the temperature sensor envelope based on conductive through hole that the object of the present invention is to provide a kind of
Assembling structure and preparation method have the lid of conductive through hole by bonding material connection by insulating substrate directly as encapsulating housing
Cap encapsulates device, makes electrode connecting conductive through-hole, which shortens the heat between temperature-sensitive membrane and external environment and pass
Lead from, improve the measurement accuracy of temperature sensor, using conductive through hole technology, highly shortened signal transmission distance,
Measurement error caused by conducting wire is reduced, package dimension is reduced, reaches wafer-level package.
According to an aspect of the present invention, a kind of packaging structure of temperature sensor based on conductive through hole is provided, including exhausted
Edge substrate, device, nut cap, the device include temperature-sensitive membrane, electrode, and it is sensitive that the temperature is arranged in the insulating substrate
The electrode is arranged in the temperature-sensitive membrane in film, and the nut cap is located at the top of the insulating substrate, and the insulating substrate is straight
It connects as encapsulating package, temperature sensor is made to be more nearly heat source；There is conductive through hole, the electrode connects institute in the nut cap
It states conductive through hole and the electrode is vertically drawn upwards by the conductive through hole, the temperature-sensitive membrane is made to pass through the electrode
With the conductive through hole and extraneous realization signal transmission, the nut cap connects the insulating substrate by bonding material, makes described
Nut cap and the insulating substrate form encapsulated space, realize the device encapsulation.
Insulating substrate is realized sensor encapsulation, pass through electrical signal directly as encapsulating housing in this encapsulating structure
Conductive through hole transmission, reduces package dimension.
The nut cap size is adapted to the insulating substrate, and there are four conductive through hole, the conductions for setting in the nut cap
The position of through-hole is corresponding with the electrode in the insulating substrate, each corresponding two conductive through holes of the electrode,
Size determines that conductive through hole extends upward through entire nut cap according to the actual situation, spreads at the top of nut cap, forms four and uniformly divides
The pad of cloth is convenient for subsequent sensor lead in use.
Preferably, conductive salient point is set on the electrode, and the conductive salient point is located at the electrode and the conductive through hole
Junction, the electrode connects the conductive through hole by the conductive salient point, and the conductive salient point is metal salient point or leads
Electric glue salient point.Conductive salient point structure between conductivity through-hole structure in electrode and nut cap considers according to the actual situation, including leads to
Multi-layer metal structure, the preforming soldered ball, conducting polymer of deposition technique formation are crossed, and adopts the conduction being formed by other methods
Salient point.
It preferably, further include metalization layer, the metalization layer is set between the temperature-sensitive membrane and the electrode,
Between the insulating substrate and the bonding material and between the bonding material and the nut cap.
Preferably, the metalization layer includes adhesion layer, and the adhesion layer is used to enhance the connection between Each part
Intensity；Further, the metalization layer further includes barrier layer, and the barrier layer is set to the insulating substrate and is bonded with described
Between material and between the bonding material and the nut cap.
It is highly preferred that the barrier layer be set to bonding material junction, avoid adhesion layer and key in bonding process
Condensation material directly contacts, and adhesion layer is caused to incorporate the bonding material.
It is highly preferred that the adhesion layer, material is one of titanium, vanadium, zirconium, chromium, niobium, violent, molybdenum, titanium nitride or a variety of；
It is highly preferred that the barrier layer, material is in nickel, manganese, molybdenum, titanium, gold, copper, silver, platinum, palladium, zinc, cadmium and titanium nitride
It is one or more.
Preferably, the insulating substrate, material are sapphire, in high heat-conducting ceramic, silicon material, silica, high-thermal conductive metal
Any one or two or more composite materials.
Preferably, the electrode, material are any one in gold, copper or aluminium.
Preferably, the temperature is sensitive, and material is any one in titanium, zirconium, hafnium, niobium or tantalum metal nitrogen oxygen thing.
Preferably, the material of the nut cap is sapphire, silicon, silica, metal, ceramics, any one in polymer.
Preferably, the material of the conductive through hole includes conducting polymer, conductive metal, electrical conductivity alloy or conductive composite wood
Any one in material.
Preferably, the bonding material is any one in organic matter, glass solder, brazing metal or solder.
In the present invention, if bonding material can be bonded very well with insulating substrate, nut cap, i.e., bonding material and insulating substrate,
Nut cap has good wetability, then does not need metalization layer.Wetability is better under normal circumstances, then welds (bonding) effect and get over
It is good.The main purpose to metallize seeks to improve wetability, in the present invention, if bonding material is that organic matter or glass weld
Material, and it is non-conductive, then it can should not metalization layer.
Preferably, the encapsulated space is air-tight packaging space and/or Vacuum Package space.
Preferably, the electrode, which is drawn out to outside sensor, uses four-wire system lead.
According to the second aspect of the invention, a kind of system of packaging structure of temperature sensor based on conductive through hole is provided
Preparation Method, is included in insulating substrate production temperature-sensitive membrane, electrode is made in the top of the temperature-sensitive membrane, in insulating substrate
Upper production bonding material；The nut cap with conductive through hole is prepared, the nut cap is served as a contrast by the bonding material and the insulation
Device encapsulation is realized in bottom connection, and the electrode connects the conductive through hole, realizes that the temperature-sensitive membrane passes through electrode and described
Conductive through hole and outer signals are transmitted.
Preferably, by performed below:
S1: the temperature-sensitive membrane is made in the insulating substrate；
S2: making the electrode in the temperature-sensitive membrane, forms the electrode and the temperature-sensitive membrane well
Ohmic contact；
S3: conductive salient point is made on the electrodes；
S4: making the bonding material in the insulating substrate, or directlys adopt preforming weld-ring；
S5: the nut cap with the conductive through hole is made；
It is processed using the micro fabrication of LTCC Technology, high-temperature co-fired ceramics technology, silicon, glass or polymer
Prepare the nut cap；The preparation of the conductive through hole in the nut cap, prepare the conductive through hole using the conductive through hole with
The nut cap synchronous processing；Or through-hole is formed by via process using in the nut cap, it is then added in through-hole again conductive
Material forms the conductive through hole；
S6: the nut cap is installed on the bonding material, by bonding technology, realizes the nut cap and the insulation
Bonding between substrate, realizes the encapsulation of device, and the electrode is made to connect the conductive through hole by conductive salient point, realizes institute
Temperature-sensitive membrane is stated to transmit by the electrode and the conductive through hole and outer signals.
In S1 step, temperature-sensitive membrane, including sensitive membrane deposition and sensitive membrane figure chemical industry are made on an insulating substrate
Specific preparation process: skill can be then spin coated onto resist and graphical, finally lead to using one layer of temperature-sensitive membrane is first deposited
Over etching technique etching, formation temperature sensitivity membrane component；Can also be using first spin-coating erosion resistant agent and graphical, then depositing temperature
Sensitive membrane, finally by lift-off technique formation temperature sensitivity membrane component；Temperature can also be prepared using other film build methods
Spend sensitive membrane.
The present invention is above-mentioned to be prepared with conductivity through-hole structure in nut cap, and preparation method is determined according to nut cap preparation method, can
With with cover board be used together common burning porcelain technique processing, can also first using lithography, laser ablation micro Process, dust it is micro- plus
The techniques such as work, electric spark micro Process form through-hole, then by electroplating technology, depositing operation, directly toward through-hole injection material etc.
Technique realizes the conduction of through-hole.
Compared with prior art, the present invention have it is following the utility model has the advantages that
In existing conventional packaging structure of temperature sensor, sensor usually is set in the upper surface of substrate, it then will lining
Bottom is installed to inside shell, realizes encapsulation, this to increase between heat source and temperature sensor across substrate material and shell
Thermal resistance between heat source and sensor not only increases the complexity of structure and technique, and influences the detection accuracy of sensor
And response speed.The present invention breaks existing regular course, directly using sensor substrate as encapsulating package, not only simplifies structure
And technique, and temperature sensor is made to be more nearly heat source, temperature measurement thermal resistance is effectively reduced, meanwhile, so that sensor measurement
The value of sensitive membrane is more nearly actual temperature value, improves the measurement accuracy and response speed of sensor, reduces cost of manufacture, into
One step reduces package dimension.
Further, electrode lead-out mode is changed to vertically draw by the present invention by conductive through hole by plane extraction, maximum
Degree diminution's package dimension, is close to or up to wafer-level package.
The present invention is widely used in low temperature measurement, including the monitoring of inertia fusion point, superconducting temperature measurement, space
Detection, low-temperature biological medical treatment etc..
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the structural schematic diagram of a preferred embodiment in the present invention；
Fig. 2 is the technical process schematic diagram of temperature-sensitive membrane and electrode in a preferred embodiment in the present invention；
Fig. 3 is the oblique view of a preferred embodiment in the present invention；
Fig. 4 is the structural schematic diagram of nut cap in a preferred embodiment in the present invention；
Fig. 5 is the top view of nut cap in a preferred embodiment in the present invention；
Fig. 6 is the bottom view of nut cap in a preferred embodiment in the present invention；
Fig. 7 is the bonding process schematic diagram of insulating substrate and nut cap in a preferred embodiment in the present invention；
Fig. 8 is the preparation technology flow chart of nut cap in a preferred embodiment in the present invention；
Figure acceptance of the bid note is expressed as: insulating substrate 1, temperature-sensitive membrane 2, electrode 3, bonding material 4, nut cap 5, conduction are logical
Hole 6, conductive salient point 7.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
Embodiment 1:
It is the schematic diagram of the encapsulating structure of one embodiment of the present invention Profound hypothermia temperature sensor, in figure shown in Fig. 1
Shown includes insulating substrate 1, temperature-sensitive membrane 2, electrode 3, bonding material 4, nut cap 5, and temperature-sensitive membrane 2 is located at insulating substrate 1
On, electrode 3 is set in temperature-sensitive membrane 2, nut cap 5 is located at the top of insulating substrate 1, insulating substrate 1 directly as encapsulating package,
Temperature sensor is set to be more nearly heat source；Nut cap 5 has conductive through hole 6, and electrode 3 connects conductive through hole 6 and electrode 3 passes through conduction
Through-hole 6 is vertical upwards to draw, and temperature-sensitive membrane 2 realizes signal transmission with extraneous by electrode 3 and conductive through hole 6, in insulation lining
Bonding material 4 is set above bottom 1, and nut cap 5 connects insulating substrate 1 by bonding material 4, forms encapsulated space, realizes sensor
Temperature-sensitive membrane 2, the devices such as electrode 3 encapsulation.
The packaging technology used in this structure, the packing forms of formation include: non-airtight encapsulation, air-tight packaging, true
The forms such as sky encapsulation.Most preferred packing forms are: using air-tight packaging and Vacuum Package.
Conductive salient point 7 is set on electrode 3, and conductive salient point 7 is located at the junction of electrode 3 and conductive through hole 6, and electrode 3 passes through
Conductive salient point 7 connects conductive through hole 6 and electrode 3 is drawn by the way that conductive through hole 6 is vertical upwards.
In the present embodiment when it is implemented, the bump structure of conductive salient point 7, considers according to the actual situation, including by heavy
Multi-layer metal structure, the preforming soldered ball, conducting polymer that product technology is formed, and adopt the conductive salient point being formed by other methods
7.Conductive salient point 7 can be metal salient point or conducting resinl salient point.
It include metalization layer in encapsulating structure, metalization layer is set between temperature-sensitive membrane 2 and electrode 3, insulating substrate 1
Between bonding material 4, between bonding material 4 and nut cap 5 and between electrode 3 and insulating substrate 1.Metalization layer includes glutinous
Attached layer and/or barrier layer, wherein adhesion layer, material are one of titanium, vanadium, zirconium, chromium, niobium, violent, molybdenum, titanium nitride or a variety of；
Barrier layer, material are one of nickel, manganese, molybdenum, titanium, gold, copper, silver, platinum, palladium, zinc, cadmium and titanium nitride or a variety of.
The material of insulating substrate 1 can for sapphire, various high heat-conducting ceramics, silicon material, silica, high-thermal conductive metal and its
Their composite material.
The material of temperature-sensitive membrane 2 can be metals nitrogen oxygen thing film and other sensitive membranes such as titanium, zirconium, hafnium, niobium and tantalum.
The electrode patterning structure of electrode 3 is the interdigital structure of parallel two electrode structures or multiple electrodes.3 material of electrode
Material can be the high conductivity materials such as gold, copper, aluminium.
Electrode, which is drawn out to outside temperature sensor, uses four-wire system lead.
Bonding material 4 is solder, brazing metal, glass solder, organic matter etc..
The material of nut cap 5 can select sapphire, silicon, silica, metal, ceramics, polymer etc..It is prepared in nut cap 5
There is 6 structure of conductive through hole, 6 structural material of conductive through hole includes that conducting polymer, conductive metal, electrical conductivity alloy and various conductions are multiple
Condensation material etc.；6 structure preparation method of conductive through hole is determined according to 5 preparation method of nut cap, and cofiring pottery can be used together with nut cap 5
The processing of porcelain technique, can also be first using techniques such as lithography, laser ablation micro Process, the micro Process that dusts, electric spark micro Process
Through-hole is formed, then by electroplating technology, depositing operation, directly toward techniques such as through-hole injection conductive materials, realizes leading for through-hole
Electricity.During preparing nut cap 5 by ceramic sintering technology, conductive through hole 6 is synchronous processing preparation；When nut cap 5 using silicon,
Glass, polymer, these materials itself are block materials, need first to punch in preparation process, are then added in hole conductive
Material realizes the preparation of conductive through hole 6.
The present embodiment is in the specific implementation process: the processing technology and technological parameter of use select according to the actual situation,
In above-mentioned preparation method, material category used by each step, size are selected according to the actual situation.
The preparation step of the present embodiment is as follows:
Insulating substrate 1 uses sapphire, and 2 material of temperature-sensitive membrane is HfOxNy thin films, and the material of electrode 3 is gold,
In, 3 adhesion layer of electrode and barrier layer are combined into one, for the chromium of sputtering.Bonding material 4 is gold-tin eutectic solder.Nut cap 5 passes through altogether
Ceramic technology production is burnt, the nut cap 5 with conductive through hole 6 is formed.Connection conductive salient point 7 between electrode 3 and conductive through hole 6 is
Golden soldering ball.
As shown in Fig. 2, preparing Profound hypothermia temperature sensitive membrane 2 in sensor, electrode 3, the specific steps are as follows:
(1) as shown in (a) in Fig. 2, using sputtering technology in insulating substrate 1 sputter temperature sensitive membrane 2, pass through quarter later
Etching technique prepares 2 element of temperature-sensitive membrane.
(2) as shown in (b) in Fig. 2,5 μm of spin coating of the positive photoresist in insulating substrate 1, and it is graphical, then successively sputter
The gold of 25nm chromium and 350nm finally removes the photoresist of surrounding using lift-off technique, completes the preparation of electrode 3.
(3) as shown in (c) in Fig. 2, golden soldering ball is arranged on electrode 3 by heating, makes conductive salient point 7.
As shown in figure 4, nut cap 5 of the preparation for encapsulation.It is made of common burning porcelain technology, being formed has conductive through hole 6
Nut cap 5.Concrete technology includes: slurry configuration, molding, sintering, shaping and monitoring.
As shown in figure 5, being bonded between insulating substrate 1 and nut cap 5, method particularly includes: in insulating substrate 1 and nut cap 5
Between preforming weld-ring is installed, carry out reflow soldering later, realize the connection of insulating substrate 1 and nut cap 5；Meanwhile on electrode 3
Conductive salient point 7 and nut cap 5 in conductive through hole 6 realize connect.At 5 surrounding bonding of nut cap, at 1 surrounding bonding of insulating substrate
There is metalization layer, completes preparation.
Embodiment 2:
Insulating substrate 1 is using the silicon wafer of surface oxide layer, and 2 material of temperature-sensitive membrane is nitrogen oxidation zirconium film, electrode 3
Material is gold, wherein 3 adhesion layer of electrode and barrier layer are combined into one, for the titanium of sputtering.Bonding material 4 is gold-tin eutectic solder.
Nut cap 5 forms the nut cap 5 with conductive through hole 6 by silicon wafer to manufacture.Connection conductive salient point between electrode 3 and conductive through hole 6
7 be golden soldering ball.Bonding material 4 and conductive salient point 7 are all gold-tin eutectic solders, in the present embodiment, same by electroplating technology
Step preparation.
Related elements are prepared in insulating substrate 1 first, the specific steps are as follows:
(1) as shown in (a) in Fig. 2, using sputtering technology in insulating substrate 1 sputter temperature sensitive membrane 2, pass through quarter later
Etching technique prepares 2 element of temperature-sensitive membrane.
(2) as shown in (b) in Fig. 2,5 μm of spin coating of the positive photoresist in insulating substrate 1, and it is graphical, then successively sputter
The gold of 20nm titanium and 300nm finally removes the photoresist of surrounding using lift-off technique, completes the preparation of electrode 3.
(3) 5 μm of spin coating of the positive photoresist in insulating substrate 1, and it is graphical, the gold of 30nm titanium and 300nm is then successively sputtered,
The photoresist for finally removing surrounding using lift-off technique, realizes the metallization at the place to be bonded of insulating substrate 1.
(4) 5 μm of spin coating of the positive photoresist in insulating substrate 1, and it is graphical, expose the place to be bonded of insulating substrate 1 and electrode 3
Upper bump location, then by electroplating technology, bonding material 4 is preset to the place to be bonded of insulating substrate 1 by electroplating gold tin solder,
The setting for realizing conductive salient point 7 on electrode 3 simultaneously, finally removes the photoresist of surrounding using lift-off technique.
As shown in figure 8, nut cap 5 of the preparation for encapsulation.Specific step is as follows:
(1) as shown in (a) in Fig. 8, by TSV technique, through-hole is prepared on silicon wafer, then by dry oxidation, logical
Hole surface forms fine and close silicon oxide layer, the very thin (not shown) of silicon oxide layer.
(2) as shown in (b) in Fig. 8, plating seed layer is formed in through-hole surfaces by sputtering technology, passes through galvanizer later
Skill fills copper in through-hole, sputters finally by sputtering technology in silicon wafer top surface, forms extension of the conductive through hole 6 in nut cap 5
Structure completes the preparation of conductive through hole 6.
(3) as shown in (c) in Fig. 8, by wet-etching technology, accommodating cavity is prepared in silicon wafer bottom surface.
(4) by sputtering technology, metalization layer is formed at nut cap place to be bonded.
Finally, the insulating substrate 1 prepared is aligned with nut cap 5, it is bonded, realizes sensor encapsulation；It is synchronous to realize conduction
The connection of salient point 7 and conductive through hole 6.
Embodiment 3:
Insulating substrate 1 uses sapphire sheet, and 2 material of temperature-sensitive membrane is nitrogen oxidation zirconium film, and the material of electrode 3 is gold,
Wherein, the adhesion layer of electrode 3 and barrier layer are combined into one, for the molybdenum of sputtering.Bonding material 4 is polyimides adhesive.Nut cap 5
By silicon wafer to manufacture, the nut cap 5 with conductive through hole 6 is formed.Connection conductive salient point 7 between electrode 3 and conductive through hole 6 is to lead
Electric glue.
Specific step is as follows:
(1) as shown in (a) in Fig. 2, using sputtering technology in insulating substrate 1 sputter temperature sensitive membrane 2, pass through quarter later
Etching technique prepares 2 element of temperature-sensitive membrane.
(2) as shown in (b) in Fig. 2,5 μm of spin coating of the positive photoresist in insulating substrate 1, and it is graphical, then successively sputter
The gold of 30nm molybdenum and 400nm finally removes the photoresist of surrounding using lift-off technique, completes the preparation of electrode 3.
(3) conducting resinl preset conductive salient point 7 on electrode 3 is used.
(4) nut cap 5 of the preparation for encapsulation.Except the system for not needing final step metalization layer in the preparation step of nut cap 5
Standby, remaining step is identical as the preparation step of nut cap in embodiment 2.
(5) it in insulating substrate 1 and coating polyimide adhesive in place's to be bonded of nut cap 5, and is aligned.By heat pressing process,
Solidify polyimides adhesive, completes sensor encapsulation；Meanwhile realizing the connection of conducting resinl and conductive through hole 6.
The value of electrode measurement sensitive membrane of the present invention is more nearly actual temperature value, improves the measurement accuracy of sensor, mentions
The high response speed of sensor, while signal transmission is carried out using conductivity through-hole structure, lead transmission range is shortened, is reduced
Wiring parasitic effect influences the measurement of temperature sensor.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (10)
1. a kind of packaging structure of temperature sensor based on conductive through hole, it is characterised in that: including insulating substrate, device, nut cap,
The device includes temperature-sensitive membrane, electrode, is arranged the temperature-sensitive membrane in the insulating substrate, in the temperature-sensitive membrane
The electrode is set, and the nut cap is located at the top of the insulating substrate, and the insulating substrate makes temperature directly as encapsulating package
Degree sensitive membrane is more nearly heat source；There is conductive through hole, the electrode connects the conductive through hole and the electricity in the nut cap
Pole is vertically drawn upwards by the conductive through hole, and the temperature-sensitive membrane is made to pass through the electrode and the conductive through hole and outer
Realize that signal transmission, the nut cap connect the insulating substrate by bonding material, make the nut cap and the insulating substrate in boundary
Encapsulated space is formed, realizes the device encapsulation.
2. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 1, it is characterised in that: described
Conductive salient point is set on electrode, and the conductive salient point is located at the junction of the electrode and the conductive through hole, and the electrode is logical
It crosses the conductive salient point and connects the conductive through hole, the conductive salient point is metal salient point or conducting resinl salient point.
3. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 1, it is characterised in that: also wrap
Include metalization layer, the metalization layer is set between the temperature-sensitive membrane and the electrode, the insulating substrate with it is described
Between bonding material and between the bonding material and the nut cap.
4. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 3, it is characterised in that: described
Metalization layer includes adhesion layer, and the adhesion layer is used to enhance the bonding strength between Each part.
5. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 4, it is characterised in that: have
Following one or more feature:
The metalization layer further includes barrier layer, and the barrier layer is set between the insulating substrate and the bonding material,
And between the bonding material and the nut cap, with straight to avoid the adhesion layer described in bonding process and the bonding material
Contact causes the adhesion layer to incorporate the bonding material；
The barrier layer, material are one of nickel, manganese, molybdenum, titanium, gold, copper, silver, platinum, palladium, zinc, cadmium and titanium nitride or a variety of；
The adhesion layer, material are one of titanium, vanadium, zirconium, chromium, niobium, violent, molybdenum, titanium nitride or a variety of.
6. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 1, it is characterised in that: have
Following one or more feature:
The insulating substrate, material are sapphire, high heat-conducting ceramic, silicon material, silica, any one in high-thermal conductive metal
Or two or more composite material；
The electrode, material are any one in gold, copper or aluminium；
The temperature is sensitive, and material is any one in titanium, zirconium, hafnium, niobium or tantalum metal nitrogen oxygen thing；
The nut cap, material are sapphire, silicon, silica, metal, ceramics, any one in polymer；
The conductive through hole, material are any one in conducting polymer, conductive metal, electrical conductivity alloy or conducing composite material；
The bonding material is any one in organic matter, glass solder, brazing metal or solder.
7. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 1, it is characterised in that: the envelope
Filling space is air-tight packaging space and/or Vacuum Package space.
8. a kind of packaging structure of temperature sensor based on conductive through hole according to claim 1, it is characterised in that: the electricity
Pole, which is drawn out to outside sensor, uses four-wire system lead.
9. a kind of preparation method of packaging structure of temperature sensor of any one of the claim 1-8 based on conductive through hole, feature
It is: includes:
Temperature-sensitive membrane is made in insulating substrate, electrode is made in the top of the temperature-sensitive membrane, makes on an insulating substrate
Bonding material；
The nut cap with conductive through hole is prepared, the nut cap is connect by the bonding material with the insulating substrate, is realized
Device encapsulation, the electrode connect the conductive through hole, realize the temperature-sensitive membrane by electrode and the conductive through hole with
Outer signals transmission.
10. a kind of preparation method of the packaging structure of temperature sensor based on conductive through hole according to claim 9, feature
It is, by performed below:
S1: the temperature-sensitive membrane is made in the insulating substrate；
S2: making the electrode in the temperature-sensitive membrane, and the electrode and the temperature-sensitive membrane is made to form Ohmic contact；
S3: conductive salient point is made on the electrodes；
S4: making the bonding material in the insulating substrate, or directlys adopt preforming weld-ring；
S5: the nut cap with conductive through hole is made；
Preparation is processed using the micro fabrication of LTCC Technology, high-temperature co-fired ceramics technology, silicon, glass or polymer
The nut cap, then through-hole is formed by via process in the nut cap, then in through-holes addition conductive material formed it is described
Conductive through hole；
Alternatively, by the conductive through hole and the nut cap synchronous processing；
S6: the nut cap is installed on the bonding material, by bonding technology, realizes the nut cap and the insulating substrate
Between bonding, realize the encapsulation of device, and the electrode is made to connect the conductive through hole by conductive salient point, realize the temperature
Sensitive membrane is spent to transmit by the electrode and the conductive through hole and outer signals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811506883.8A CN109632121A (en) | 2018-12-10 | 2018-12-10 | A kind of packaging structure of temperature sensor and preparation method based on conductive through hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811506883.8A CN109632121A (en) | 2018-12-10 | 2018-12-10 | A kind of packaging structure of temperature sensor and preparation method based on conductive through hole |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114440960A (en) * | 2020-11-03 | 2022-05-06 | 中国科学院微电子研究所 | Conductivity temperature sensor system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1103203A (en) * | 1993-01-27 | 1995-05-31 | Trw公司 | Mass simultaneous sealing and electrical connection of electronic devices |
| CN101421591A (en) * | 2006-02-13 | 2009-04-29 | 霍尼韦尔国际公司 | Surface acoustic wave packages and methods of forming same |
| JP2011185701A (en) * | 2010-03-08 | 2011-09-22 | Nec Corp | Mounting structure of temperature detection element |
| CN102749167A (en) * | 2012-06-20 | 2012-10-24 | 北京大学 | Pressure sensor encapsulation structure containing silicon through holes |
| CN102853926A (en) * | 2012-09-24 | 2013-01-02 | 江苏物联网研究发展中心 | Packing structure of MEMS (Micro-electromechanical Systems) temperature sensor and manufacturing method of packing structure |
-
2018
- 2018-12-10 CN CN201811506883.8A patent/CN109632121A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1103203A (en) * | 1993-01-27 | 1995-05-31 | Trw公司 | Mass simultaneous sealing and electrical connection of electronic devices |
| CN101421591A (en) * | 2006-02-13 | 2009-04-29 | 霍尼韦尔国际公司 | Surface acoustic wave packages and methods of forming same |
| JP2011185701A (en) * | 2010-03-08 | 2011-09-22 | Nec Corp | Mounting structure of temperature detection element |
| CN102749167A (en) * | 2012-06-20 | 2012-10-24 | 北京大学 | Pressure sensor encapsulation structure containing silicon through holes |
| CN102853926A (en) * | 2012-09-24 | 2013-01-02 | 江苏物联网研究发展中心 | Packing structure of MEMS (Micro-electromechanical Systems) temperature sensor and manufacturing method of packing structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114440960A (en) * | 2020-11-03 | 2022-05-06 | 中国科学院微电子研究所 | Conductivity temperature sensor system |
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