CN102745642A - Integration getter MEMS (micro-electro-mechanical systems) film packaging structure and manufacturing method thereof - Google Patents
Integration getter MEMS (micro-electro-mechanical systems) film packaging structure and manufacturing method thereof Download PDFInfo
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- CN102745642A CN102745642A CN2012102638770A CN201210263877A CN102745642A CN 102745642 A CN102745642 A CN 102745642A CN 2012102638770 A CN2012102638770 A CN 2012102638770A CN 201210263877 A CN201210263877 A CN 201210263877A CN 102745642 A CN102745642 A CN 102745642A
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Abstract
The invention relates to an integration getter MEMS (micro-electromechanical systems) film packaging structure and a manufacturing method of the integration getter MEMS film packaging structure, which belong to the technical field of MEMS package. According to the technical field provided by the invention, the integration getter MEMS film packaging structure comprises a film sealing cap and a bearing substrate arranged below the film sealing cap; a cavity used for containing the MEMS structure is arranged between the film sealing cap and the bearing substrate; the cavity internally contains the MEMS structure; the MEMS structure is connected with the film sealing cap or the bearing substrate; the film sealing cap comprises a getter layer on the inner side and a final seal layer arranged on the outer side; the film sealing cap is connected with the bearing substrate through the getter layer and the final seal layer and forms an inner cavity wall with the bearing substrate through the getter layer; and the final seal layer is positioned at the outer side of the getter layer and seals the MEMS structure in the cavity. The integration getter MEMS film packaging structure provided by the invention has a simple and novel structure, can improve the performance of an MEMS device sealed by a film, has wide application scope and is safe and reliable.
Description
Technical field
The present invention relates to a kind of MEMS thin-film packing structure and manufacturing approach thereof, especially a kind of MEMS thin-film packing structure and manufacturing approach thereof of integrated getter belong to the technical field that MEMS encapsulates.
Background technology
Development along with technology of Internet of things; Increasing MEMS (Micro-Electro-Mechanical Systems) device need be applied in devices such as microsensor and the system; But high cost has hindered MEMS product in enormous quantities and has come into the market, and wherein very big a part of product cost then comes from the encapsulation of MEMS device.Passed through exploration and research for many years, the MEMS encapsulation technology has had significant progress and progress than the starting stage.Traditional M EMS packaged type welds encapsulation etc. like device level, can not satisfy the demand of existing market, and begins progressively to become the packaged type of novel MEMS device based on MEMS wafer scale, the chip size packages of wafer bond techniques.Yet the wafer bonding encapsulation technology also has its weakness, as: need the substrate of two couplings, need the special wafer bonding apparatus, encapsulation back MEMS device volume is bigger etc.So the birth technological based on the diaphragm seal of surface micro processing technology solved the problems referred to above, become the advanced MEMS encapsulation technology of future generation after wafer bond techniques.But owing to use the MEMS device cavity of diaphragm seal technology encapsulation less, the venting of encapsulating material or the gas leakage of external environment all can produce tremendous influence to the pressure of encapsulation cavity.In some occasions that the potting degree is had higher requirements (as: encapsulation of infrared focus plane sensor etc.), because the cavity that advanced technologies is brought reduces undoubtedly keeping of device reliability to have been proposed harsh more requirement.So the getter of in wafer bonding technology, using always is being studied personnel and is managing to be applied in the diaphragm seal technology.
Relatively more typical; 2009; The Peter Rothacher of company of German Bosch has proposed a kind of MEMS thin-film packing structure that has the inside cavity gas barrier layer; This method is the inner gas barrier layer that adds than the advantage of the technology of conventional films sealing; Can hinder effectively that encapsulating material is in use exitted and the MEMS chamber pressure that causes changes, but not propose the method for integrated getter in the diaphragm seal cavity in this invention, and use the technological formation of complicated material transferring sealing cap structure.For the instance of integrated getter in the cavity of diaphragm seal, in backing material, mixed getter particles like people such as Anil Raj Duggal in 2002, be used for the Vacuum Package of LED; 2004; Jay S. Lewis and Michael S. Weaver are to the Vacuum Package of LED; Adopted the method for two kinds of integrated getters in encapsulation: a kind ofly be to use thin film deposition, carry out the led function layer successively, the deposition of getter layer and sealant; But getter contacts with the LED structure in this scheme, the formation of no cavity; Another kind is the mode that adopts bonding, is formed between two substrates through epoxy resin bonding piece and forms cavity, and getter then is positioned on the upper cover plate; 2006, people such as Markus Lutz proposed a kind of structure of MEMS thin-film package, and wherein getter is positioned on the MEMS device substrate, and no getter is used on package cavity body sidewall and the top cover; Similarly; In 2011, people such as G. Dumont are also integrated Fe Getter Films Prepared in the MEMS of chip size thin-film package infrared focal plane array, and this structure is positioned on the MEMS device substrate; Not only be used to absorb the residual gas in the encapsulation cavity, also use as reflection layer; 2010; People such as Pezhman Monadgemi are produced on Fe Getter Films Prepared in the sealing cap structure of MEMS diaphragm seal; Played air-breathing to a certain extent and effect choke; But the shortcoming of this structure is: getter is sandwiched between the two-layer encapsulant, thereby pumping property is affected, and also can't effectively stop the venting of internal layer encapsulant in the device use.
Analyzing above-mentioned progress situation can know, in present LED encapsulation, has the technology that getter is integrated into the diaphragm seal structure, and this scheme does not encapsulate the formation of cavity, is difficult to be applied in the MEMS encapsulation; In MEMS thin-film package technology; Also there is not a kind of effective method that getter layer and sealing cap gas barrier layer are combined well; Satisfy air-breathing simultaneously and function choke; Though present method for packing can satisfy some MEMS product demand,, still need further research and development to precision, device that reliability requirement is very high.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of MEMS thin-film packing structure and manufacturing approach thereof of integrated getter is provided, it is simple in structure, can not influence the situation decline low production cost of device performance, and wide accommodation is safe and reliable.
According to technical scheme provided by the invention, the MEMS thin-film packing structure of said integrated getter comprises the film sealing cap and is positioned at the carrying substrate of said film sealing cap below; Be provided with the cavity that is used to hold the MEMS structure between said film sealing cap and carrying substrate, taken in the MEMS structure in the said cavity, said MEMS structure links to each other with film sealing cap or carrying substrate; Said film sealing cap comprises the final sealant that is positioned at inboard getter layer and is positioned at the outside, and the film sealing cap links to each other with the carrying substrate through getter layer in the film sealing cap and final sealant, and through forming cavity inner wall between getter layer and carrying substrate; Final sealant is positioned at the getter layer outside, and with the MEMS sealing structure in cavity.
Be provided with one or more layers intermediate layer between said getter layer and final sealant, the shape of said intermediate layer and getter layer is consistent.
The contacted surface of said getter layer and cavity is the surface of coarse or porous, and the root-mean-square value of getter layer and the contacted surface roughness of cavity is 5nm ~ 1000nm.
The material of said carrying substrate is silica-base material, ceramic material or macromolecular material.
Said film sealing cap is general sealing cap or photo-detector sealing cap.
Said getter layer is provided with some getter layer through holes, and said getter layer through hole is connected with cavity.
A kind of MEMS thin-film packing structure manufacturing approach of integrated getter, said MEMS thin-film packing structure manufacturing approach comprises the steps:
A, the carrying that carries MEMS structure substrate is provided, deposition covers first protective layer of MEMS structure and corresponding carrying substrate surface fully on said carrying substrate;
B, optionally shelter and corrode first protective layer, to carry second protective layer that obtains being used to cover the MEMS structure on the substrate;
C, prepare getter layer carrying on the substrate and second protective layer, said getter layer contacts with carrying substrate, and covers the surface of second protective layer, with the endothecium structure of formation film sealing cap; Getter layer is provided with the getter layer through hole that connects getter layer, to expose second protective layer of correspondence position through the getter layer through hole;
D, utilize the getter layer through hole on the getter layer, erosion removal covers second protective layer of MEMS structure, discharges the MEMS structure and getter layer is activated;
E, on above-mentioned getter layer the final sealant of deposition, said final sealant is covered on the getter layer, and is filled in the getter layer through hole, to form required film sealing cap on the substrate carrying.
Among the said step b, after obtaining second protective layer, roughened is carried out on the surface of second protective layer.
Among the said step c, after passing through the second relative protective layer of getter layer through hole exposure on the getter layer, one or more layers intermediate layer is set on getter layer, said intermediate layer is provided with the intermediate layer through hole, and said intermediate layer through hole is connected with the getter layer through hole.
In the said steps d, utilize the method for heating that getter layer is activated.
Advantage of the present invention:
1, the MEMS thin-film packing structure of a kind of integrated getter of the present invention's proposition; Technology with respect to the bonding package of MEMS; Prepared product has littler volume, and with respect to the technology of diaphragm seal LED, this programme provides the cavity that supplies the activity of MEMS structure; And integrated getter in the structure, can effectively control the force value in the MEMS encapsulation cavity.
2, the MEMS thin-film packing structure of a kind of integrated getter of the present invention's proposition; With the innermost layer of getter layer as MEMS encapsulation sealing cap structure; Directly contact, can farthest bring into play its air-breathing effect, and can farthest stop the venting of exterior material in long-term use in the sealing cap structure with cavity; And stop in the external environment gas cavity that bleeds, thereby the precision that the MEMS long term device uses and the service life and the reliability of product have been promoted.
3, the MEMS thin-film packing structure of a kind of integrated getter of the present invention's proposition; Owing to have sealing cap structure innermost layer to be provided with to have concurrently the getter layer of air-breathing function, choke function; Outer containment layer of the present invention can be selected cheap macromolecular material for use, thereby reduces the cost of whole M EMS product.
Description of drawings
Fig. 1 ~ Fig. 6 is the practical implementation processing step cutaway view of the embodiment of the invention 1, wherein:
Fig. 1 is provided with the MEMS structure for the present invention on the carrying substrate, and covers the cutaway view behind first protective layer.
Fig. 2 obtains the cutaway view behind second protective layer for the present invention.
Fig. 3 is the cutaway view of the present invention after depositing getter layer on second protective layer and obtaining the getter layer through hole.
Fig. 4 is the cutaway view of the present invention after first intermediate layer is set on the getter layer.
Fig. 5 removes the cutaway view after second protective layer forms cavity for the present invention.
Fig. 6 obtains the structure cutaway view of general sealing cap for the present invention.
Fig. 7 ~ Figure 12 is for being encapsulated as routine practical implementation processing step cutaway view with the infrared detector chip level in the embodiment of the invention 2, and wherein: Fig. 7 carries for the present invention infrared detector structure is set on the substrate, and covers the cutaway view behind first protective layer.
Fig. 8 obtains the cutaway view behind second protective layer for the present invention.
Fig. 9 is the cutaway view of the present invention after depositing getter layer on second protective layer and obtaining optical window.
Figure 10 is the cutaway view of the present invention after second intermediate layer is set on the getter layer.
Figure 11 forms the cutaway view behind the cavity behind second protective layer for the present invention removes.
Figure 12 obtains the structure cutaway view of Infrared Detectors sealing cap for the present invention.
Description of reference numerals: 1-carries substrate, 2-MEMS structure, 3-first protective layer, 4-second protective layer, 5-getter layer, 6-getter layer through hole, the 7-first intermediate layer through hole, 8-first intermediate layer, 9-cavity, 10-first sealant, the general sealing cap of 11-, 12-second intermediate layer, 13-second sealant, 14-optical window, 15-photo-detector sealing cap and the 16-second intermediate layer through hole.
The specific embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1 ~ shown in Figure 12: the embodiment of the invention is example with MEMS structure 2 with carrying the structure that substrate 1 links to each other, and the preparation process of structure of the present invention and correspondence thereof is described.Wherein, The material that carries substrate 1 is silica-base material, ceramic material or macromolecular material, and wherein, silica-base material comprises silicon, glass etc.; Ceramic material comprises aluminium nitride ceramics, aluminium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics etc.; Said macromolecular material comprises polyimides, epoxy resin etc., and the material that carries substrate 1 is known by present technique field personnel, no longer details here.In the embodiment of the invention; The material of getter layer 5 is barium, titanium, zirconium, based on the alloy of barium, based on the alloy of titanium or the film that forms based on the alloy of zirconium; Be used to absorb steam and other foreign gas in the cavity 9, to promote the stability of cavity 9 air pressure inside.
Among the present invention; When in the film sealing cap intermediate layer being set; Described intermediate layer material is silica-base material, metal material, ceramic material, macromolecular material or its combination in any; Wherein, metal material is gold, aluminium, copper, tungsten, titanium or nickel etc., ceramic material, macromolecular material with above-mentioned enumerate describe identical.In the embodiment of the invention; Final sealant material in the film sealing cap is silica-base material, metal material, ceramic material, macromolecular material, zinc sulphide, magnesia or its combination in any; Wherein, Silica-base material, metal material, ceramic material, macromolecular material are all identical with foregoing description, and are present technique field personnel and know, and no longer detail here.
As shown in Figure 6, in the present embodiment, the MEMS thin-film packing structure of integrated getter comprises the carrying substrate 1 of general sealing cap 11 and said general sealing cap 11 belows; 11 of said carrying substrate 1 and general sealing caps are provided with the cavity 9 that is used to take in MEMS structure 2, and MEMS structure 2 is positioned at cavity 9, and MEMS structure 2 links to each other with carrying substrate 1; Said general sealing cap 11 is formed by trilaminate material, and wherein the most inboard getter layer 5 for activating directly contacts with cavity 9, and outermost is provided with one deck first final sealant 10, between the first final sealant 10 and getter layer 5, is provided with first intermediate layer 8.Can MEMS structure 2 be encapsulated in the cavity 9 through general sealing cap 11, in cavity 9, to form the required working environment of MEMS structure 2.
As shown in Figure 3, be provided with four vertical getter layer through holes 6 in the most inboard getter layer 5 in the described general sealing cap 11 so that carry out corrosion to second protective layer 4, wherein the pattern edge of getter layer 5 with carry substrate 1 formation and well contact; In addition, as shown in Figure 6, the interface that getter layer 5 contacts with MEMS cavity 9 is the surface topography of coarse or porous, and the root-mean-square value of surface roughness is 100nm, at utmost to bring into play the pumping property of getter.
As shown in Figure 6, be provided with first intermediate layer 8 in the general sealing cap 11, and this intermediate layer 8 is provided with the first intermediate layer through hole 7 with getter layer 5 in same position, promptly first intermediate throughholes 7 is connected with getter layer through hole 6, and first intermediate layer 8 covers getter layer 5 fully.
The outermost first final sealant 10 is the structure of continuous atresia in the described general sealing cap 11, so that getter layer 5 and intermediate layer 8 are covered fully.
Extremely shown in Figure 6 like Fig. 1: the MEMS thin-film packing structure of above-mentioned integrated getter can pass through following processing step to be realized, particularly:
A, the carrying substrate 1 that carries MEMS structure 2 is provided, deposition covers first protective layer 3 on MEMS structure 2 and corresponding carrying substrate 1 surface fully on said carrying substrate 1;
As shown in Figure 1, the material of first protective layer 3 is a polymethyl methacrylate, and said MEMS structure 2 is any required structure, is carrying the required MEMS structure 2 of prepared that adopts routine on the substrate 1, and concrete preparation process no longer details here;
B, optionally shelter and corrode first protective layer 3, to carry second protective layer 4 that obtains being used to cover MEMS structure 2 on the substrate 1;
As shown in Figure 2; Use the technology of ultraviolet lithography that first protective layer 3 is carried out graphically; And use the oxygen gas plasma corroding method to remove first protective layer 3; Only keep to cover MEMS structure 2 and first protective layer 3 on every side thereof, to form the size decision of size that second protective layer, 4, the second protective layers 4 keep by the MEMS cavity 9 of design; After obtaining second protective layer 4, use the method for ar atmo bombardment, roughened is carried out on second protective layer, 4 surfaces, make the root-mean-square value of its surface roughness reach 100nm; Roughened is carried out on surface through to second protective layer 4, can make the surface of subsequent inspiration agent layer 5 have corresponding roughness;
C, carrying preparation getter layer 5 on the substrate 1 and second protective layer 4, said getter layer 5 contacts with carrying substrate 1, and covers the surface of second protective layer 4, with the endothecium structure of formation film sealing cap; Getter layer 5 is provided with the getter layer through hole 6 that connects getter layer 5, to expose second protective layer 4 of correspondence position through getter layer through hole 6;
As shown in Figure 3; Use titanium-zirconium-vanadium alloy target (titanium 30%-zirconium 20%-vanadium 50%; 99.5% purity); Method through magnetron sputtering and lift off technology at the titanium-zirconium-vanadium getter layer 5 that carries substrate 1 and second protective layer, 4 surface deposition 300nm, makes getter layer 5 form the innermost layer of three-dimensional general sealing cap 11 along the surface of second protective layer 4; Getter layer 5 pattern edges form excellent contact with carrying substrate 1, and the vertical getter layer through hole 6 that getter layer 5 forms four diameters in graphical process be 5 μ m is to expose second protective layer 4 of correspondence position;
D, utilize the getter layer through hole 6 on the getter layer 5, erosion removal covers second protective layer 4 of MEMS structure 2, and getter layer 5 is activated;
In the embodiment of the invention, general sealing cap 11 comprises first intermediate layer 8, and it is as shown in Figure 4 to prepare first intermediate layer 8; Use the method for plasma enhanced body chemical vapor phase growing; Make 5 μ m silica, first intermediate layer 8 in getter layer 5 outsides, and, make first intermediate layer 8 be provided with four first intermediate layer through holes 7 in same position with getter layer 5 through graphical technology; Through-hole diameter is 3 μ m, and first intermediate layer 8 covers getter for 5 layers fully.
As shown in Figure 5, use the oxygen gas plasma corroding method, reacting gas is through the first intermediate layer through hole 7 and getter layer through hole 6; Remove after second protective layer 4 of polymethyl methacrylate; Discharge MEMS structure 2, form cavity 9, and sample is heated to 350 degrees centigrade; Continue 30 minutes, activated degasser 5; After removing second protective layer 4, the inwall of getter layer 5 forms and cavity 9 contacted surfaces, and getter layer 5 forms and the consistent roughness in second protective layer, 4 surfaces with cavity 9 contacted surfaces.The root-mean-square value of the roughness on getter layer 5 surfaces is 100nm.
E, on above-mentioned getter layer 5 the final sealant of deposition, said final sealant is covered on the getter layer 5, and is filled in the getter layer through hole 6, to form required film sealing cap on the substrate 1 carrying.
In the present embodiment; Final sealant is first sealant 10; As shown in Figure 6, use the method for plasma enhanced body chemical vapor phase growing, the deposition chambers pressure condition of 0.1 handkerchief is set; Deposit the silicon nitride film of the thick continuous fully and atresia of 10 μ m in the outside in above-mentioned first intermediate layer 8; Together form general sealing cap 11 as first sealant, 10, the first sealants 10 with the aforementioned getter layer for preparing 5 and first intermediate layer 8, general sealing cap 11 forms final MEMS thin-film packing structure with carrying substrate 1 again.
Present embodiment is introduced a kind of use infrared detector chip level of the present invention thin-film package scheme.Shown in figure 12, the MEMS thin-film packing structure of said integrated getter comprises photo-detector sealing cap 15 and is positioned at the carrying substrate 1 of said photo-detector sealing cap 15 belows; 15 of said carrying substrate 1 and photo-detector sealing caps are provided with cavity 9 to hold MEMS structure 2, and MEMS structure 2 links to each other with carrying substrate 1; Said photo-detector sealing cap 15 is formed by trilaminate material; Wherein the most inboard is the getter layer 5 that activates; Directly contact with cavity 9, outermost is provided with antireflecting second sealant 13 of one deck, between second sealant 13 and getter layer 5, is provided with one deck to the second transparent intermediate layer 12 of infrared ray.
As shown in Figure 9, be provided with optical window 14 so that carry out corrosion in the most inboard getter layer 5 in the said optical thin film sealing cap 15 to second protective layer 4, wherein the pattern edge of getter layer 5 well contacts with carrying substrate 1; In addition, as shown in Figure 9, the interface that getter layer 5 contacts with cavity 9 is the surface topography of coarse or porous, and the root-mean-square value of surface roughness is 100nm, at utmost to bring into play the pumping property of getter.
Shown in figure 12; Be provided with second intermediate layer 12 in the photo-detector sealing cap 15; And be provided with the logical second intermediate layer through hole 16 in this second intermediate layer 12; The second intermediate layer through hole 16 is connected with getter layer through hole 6, and second intermediate layer 12 covers getter layer 5 fully, and second intermediate layer 12 is the material to infrared transparent.
Outermost second sealant 13 is the structure of continuous atresia in the said photo-detector sealing cap 15, and the getter layer 5 and second intermediate layer 12 are covered fully, and second sealant 13 also is an anti-reflecting layer.
Described carrying substrate 1 is a silicon; Described getter layer 5 is titanium-zirconium-vanadium alloy, is used to absorb steam and other foreign gas in the cavity 9, to promote the stability of cavity 9 air pressure inside; The material in described second intermediate layer 12 is non-crystalline silicon or amorphous germanium silicon; The zinc sulphide of described second sealant 13 or magnesia etc.
Extremely shown in Figure 12 like Fig. 7: the MEMS thin-film packing structure of above-mentioned integrated getter can pass through following processing step to be realized, particularly:
A, the carrying substrate 1 that carries MEMS structure 2 is provided, deposition covers first protective layer 3 on MEMS structure 2 and corresponding carrying substrate 1 surface fully on said carrying substrate 1;
As shown in Figure 7, the material of second protective layer 3 is a polymethyl methacrylate; MEMS structure 2 is an infrared detector structure;
B, optionally shelter and corrode first protective layer 3, to carry second protective layer 4 that obtains being used to cover MEMS structure 2 on the substrate 1;
As shown in Figure 8; Use the technology of ultraviolet lithography that first protective layer 3 is carried out graphically; And use the oxygen gas plasma corroding method to remove first protective layer 3; Only keep of the size decision of the size of MEMS structure 2 and second protective layer, 4, the second protective layers, 4 reservations on every side thereof by the MEMS cavity of design; Use the method for ar atmo bombardment, roughened is carried out on second protective layer, 4 surfaces of polymethyl methacrylate, make the root-mean-square value of its surface roughness reach 100nm;
C, carrying preparation getter layer 5 on the substrate 1 and second protective layer 4, said getter layer 5 contacts with carrying substrate 1, and covers the surface of second protective layer 4, with the endothecium structure of formation film sealing cap; Getter layer 5 is provided with the getter layer through hole 6 that connects getter layer 5, to expose the second relative protective layer 4 through getter layer through hole 6;
As shown in Figure 9; Use titanium-zirconium-vanadium alloy target (titanium 30%-zirconium 20%-vanadium 50%; 99.5% purity); Method through magnetron sputtering and lift off technology at the titanium-zirconium-vanadium getter layer 5 that carries substrate 1 and second protective layer, 4 surface deposition 300nm, makes getter layer 5 form the innermost layer of three-dimensional photo-detector sealing cap 15 along the surface of second protective layer 4; Getter layer 5 pattern edges form excellent contact with carrying substrate 1, and getter layer 5 formation diameter in graphical process is that the vertical through hole structure of 200 μ m forms optical window 14 to see through infrared ray;
Shown in figure 10, the method for use plasma enhanced body chemical vapor phase growing is made 5 μ m non-crystalline silicons, second intermediate layer 12 in getter layer 5 outsides; And through graphical technology; The second intermediate layer through hole, 16, the second intermediate layer through holes 16 that form four diameters and be 5 μ m are connected with getter layer through hole 6, to expose the second structure protective layer 4; Through-hole diameter is 3 μ m, and second intermediate layer 12 covers getter for 5 layers fully.
D, utilize the getter layer through hole 6 on the getter layer 5, erosion removal covers second protective layer 4 of MEMS structure 2, and getter layer 5 is activated;
Shown in figure 11, use the oxygen gas plasma corroding method, reacting gas is through the second intermediate layer through hole 16 and getter layer through hole 6; Remove after second protective layer 4 of polymethyl methacrylate; Discharge MEMS structure 2, form cavity 9, and sample is heated to 350 degrees centigrade; Continue 30 minutes, with activated degasser 5;
E, on above-mentioned getter layer 5 the final sealant of deposition, said final sealant is covered on the getter layer 5, and is filled in the getter layer through hole 6, to form required film sealing cap on the substrate 1 carrying.
In the present embodiment; Final sealant is second sealant 13; Shown in figure 12, use the method for plasma enhanced body chemical vapor phase growing, the deposition chambers pressure condition of 1 handkerchief is set; Deposit the zinc sulfide film of the thick continuous fully and atresia of 10 μ m in the outside in above-mentioned second intermediate layer 12; Together form photo-detector sealing cap 15 as second sealant, 13, the second sealants 13 with the aforementioned getter layer for preparing 5 and second intermediate layer 12, photo-detector sealing cap 15 carries the thin-film packing structure that substrate 1 forms final Infrared Detectors MEMS chip with MEMS again.
The present invention is with respect to the technology of bonding package of MEMS; Prepared product has littler volume, and with respect to the technology of diaphragm seal LED, this programme provides the cavity 9 that supplies 2 activities of MEMS structure; And integrated getter in the structure, can effectively control the force value in the MEMS encapsulation cavity.
The present invention is with the innermost layer of getter layer 5 as MEMS encapsulation sealing cap structure; Directly contact with cavity 9; Can farthest bring into play its air-breathing effect; And can farthest stop the venting in long-term use of exterior material in the sealing cap structure, and stop in the external environment gas cavity 9 that bleeds, thereby promoted the precision that the MEMS long term device uses and the service life and the reliability of product.
The present invention is owing to exist sealing cap structure innermost layer to be provided with to have concurrently the getter layer 5 of air-breathing function and choke function, and the outer containment layer of this diaphragm seal structure can be selected cheap macromolecular material for use, thus the cost of reduction whole M EMS product.
Above-mentioned example can be used for structure of the present invention and manufacture process are described, but enforcement of the present invention never only limits to this embodiment.In the scope that does not break away from the present invention and appended claim, various replacements, variation and modification all are possible.Therefore, protection scope of the present invention is not limited to embodiment and the disclosed content of accompanying drawing.
Claims (10)
1. the MEMS thin-film packing structure of an integrated getter comprises the film sealing cap and is positioned at the carrying substrate (1) of said film sealing cap below; It is characterized in that: be provided with the cavity (9) that is used to hold MEMS structure (2) between said film sealing cap and carrying substrate (1), taken in MEMS structure (2) in the said cavity (9), said MEMS structure (2) links to each other with film sealing cap or carrying substrate (1); Said film sealing cap comprises the final sealant that is positioned at inboard getter layer (5) and is positioned at the outside; The film sealing cap links to each other with carrying substrate (1) through getter layer (5) in the film sealing cap and final sealant, and through forming cavity (9) inwall between getter layer (5) and carrying substrate (1); Final sealant is positioned at getter layer (5) outside, and MEMS structure (2) is sealed in the cavity (9).
2. the MEMS membrane structure of integrated getter according to claim 1 is characterized in that: be provided with one or more layers intermediate layer between said getter layer (5) and final sealant, the shape of said intermediate layer and getter layer (5) is consistent.
3. the MEMS membrane structure of integrated getter according to claim 1; It is characterized in that: said getter layer (5) and the contacted surface of cavity (9) are the surface of coarse or porous, and getter layer (5) is 5nm ~ 1000nm with the root-mean-square value of the contacted surface roughness of cavity (9).
4. the MEMS membrane structure of integrated getter according to claim 1, it is characterized in that: the material of said carrying substrate (1) is silica-base material, ceramic material or macromolecular material.
5. the MEMS membrane structure of integrated getter according to claim 1, it is characterized in that: said film sealing cap is general sealing cap (11) or photo-detector sealing cap (15).
6. the MEMS membrane structure of integrated getter according to claim 2, it is characterized in that: said getter layer (5) is provided with some getter layer through holes (6), and said getter layer through hole (6) is connected with cavity (9).
7. the MEMS thin-film packing structure manufacturing approach of an integrated getter is characterized in that, said MEMS thin-film packing structure manufacturing approach comprises the steps:
(a), the carrying substrate that carries MEMS structure (2) (1) is provided, go up first protective layer (3) that deposition covers MEMS structure (2) and corresponding carrying substrate (1) surface fully at said carrying substrate (1);
(b), optionally shelter and corrode first protective layer (3), to carry second protective layer (4) that obtains being used to cover MEMS structure (2) on the substrate (1);
(c), upward preparation getter layer (5) carrying substrate (1) and second protective layer (4), said getter layer (5) contacts with carrying substrate (1), and covers the surface of second protective layer (4), with the endothecium structure of formation film sealing cap; Getter layer (5) is provided with the getter layer through hole (6) that connects getter layer (5), to expose second protective layer (4) of correspondence position through getter layer through hole (6);
(d), utilize the getter layer through hole (6) on the getter layer (5), erosion removal covers second protective layer (4) of MEMS structure (2), discharges MEMS structure (2) and getter layer (5) is activated;
(e), upward the final sealant of deposition, said final sealant is covered on the getter layer (5), and is filled in the getter layer through hole (6), to go up and form required film sealing cap carrying substrate (1) at above-mentioned getter layer (5).
8. according to the MEMS thin-film packing structure manufacturing approach of the said integrated getter of claim 7, it is characterized in that: in the said step (b), after obtaining second protective layer (4), roughened is carried out on the surface of second protective layer (4).
9. according to the MEMS thin-film packing structure manufacturing approach of the said integrated getter of claim 7; It is characterized in that: in the said step (c); After getter layer (5) is gone up through relative second protective layer (4) of getter layer through hole (6) exposure; On getter layer (5), one or more layers intermediate layer is set, said intermediate layer is provided with the intermediate layer through hole, and said intermediate layer through hole is connected with getter layer through hole (6).
10. according to the MEMS thin-film packing structure manufacturing approach of the said integrated getter of claim 7, it is characterized in that: in the said step (d), utilize the method for heating that getter layer (5) is activated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102638770A CN102745642A (en) | 2012-07-27 | 2012-07-27 | Integration getter MEMS (micro-electro-mechanical systems) film packaging structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012102638770A CN102745642A (en) | 2012-07-27 | 2012-07-27 | Integration getter MEMS (micro-electro-mechanical systems) film packaging structure and manufacturing method thereof |
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|---|---|---|---|---|
| CN104944355A (en) * | 2014-03-25 | 2015-09-30 | 精工爱普生株式会社 | MEMS device and method of manufacturing the same |
| CN105129720A (en) * | 2015-07-25 | 2015-12-09 | 中国科学院地质与地球物理研究所 | MEMS sensor packaging structure and method |
| CN105449008A (en) * | 2014-07-10 | 2016-03-30 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN106029555A (en) * | 2013-12-06 | 2016-10-12 | 埃普科斯股份有限公司 | Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole |
| CN106241724A (en) * | 2015-06-03 | 2016-12-21 | 台湾积体电路制造股份有限公司 | The wafer scale hermetic sealing process of MEMS (MEMS) device |
| CN106249372A (en) * | 2016-09-18 | 2016-12-21 | 上海晶鼎光电科技有限公司 | A kind of wafer scale integrated optics window and preparation method thereof |
| CN106605157A (en) * | 2014-09-11 | 2017-04-26 | 通用电气公司 | X-ray detector and X-ray systems using organic photodiodes |
| CN107316844A (en) * | 2017-06-22 | 2017-11-03 | 江苏物联网研究发展中心 | Electrical activation sealing cap structure for wafer-level vacuum packaged getter |
| CN108117038A (en) * | 2016-11-29 | 2018-06-05 | 台湾积体电路制造股份有限公司 | The multi-layer sealed film of high sealing yield |
| CN109678105A (en) * | 2017-10-18 | 2019-04-26 | 英飞凌科技股份有限公司 | The method for entering opening of cavity and the MEMS component with closure elements are led in closing |
| CN113049107A (en) * | 2021-01-29 | 2021-06-29 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array pixel level packaging structure and packaging method thereof |
| CN113086938A (en) * | 2020-03-05 | 2021-07-09 | 迈瑞迪创新科技有限公司 | CMOS capping for MEMS devices |
| CN114933276A (en) * | 2022-07-20 | 2022-08-23 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
| FR3128307A1 (en) * | 2021-10-14 | 2023-04-21 | Safran Electronics & Defense | NON-EVAPORABLE GETTER ACTIVATED AT LOW TEMPERATURE, PUMPING DEVICE AND ENCLOSURE CONTAINING SUCH A GETTER |
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| CN106029555A (en) * | 2013-12-06 | 2016-10-12 | 埃普科斯股份有限公司 | Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole |
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| CN104944355A (en) * | 2014-03-25 | 2015-09-30 | 精工爱普生株式会社 | MEMS device and method of manufacturing the same |
| CN105449008A (en) * | 2014-07-10 | 2016-03-30 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN105449008B (en) * | 2014-07-10 | 2017-05-17 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN106605157A (en) * | 2014-09-11 | 2017-04-26 | 通用电气公司 | X-ray detector and X-ray systems using organic photodiodes |
| CN106241724A (en) * | 2015-06-03 | 2016-12-21 | 台湾积体电路制造股份有限公司 | The wafer scale hermetic sealing process of MEMS (MEMS) device |
| CN105129720A (en) * | 2015-07-25 | 2015-12-09 | 中国科学院地质与地球物理研究所 | MEMS sensor packaging structure and method |
| CN106249372A (en) * | 2016-09-18 | 2016-12-21 | 上海晶鼎光电科技有限公司 | A kind of wafer scale integrated optics window and preparation method thereof |
| CN108117038B (en) * | 2016-11-29 | 2020-11-20 | 台湾积体电路制造股份有限公司 | Multi-layer sealing film with high sealing yield |
| CN108117038A (en) * | 2016-11-29 | 2018-06-05 | 台湾积体电路制造股份有限公司 | The multi-layer sealed film of high sealing yield |
| CN107316844A (en) * | 2017-06-22 | 2017-11-03 | 江苏物联网研究发展中心 | Electrical activation sealing cap structure for wafer-level vacuum packaged getter |
| CN107316844B (en) * | 2017-06-22 | 2019-05-31 | 江苏物联网研究发展中心 | Electrical activation sealing cap structure for wafer-level vacuum packaged getter |
| CN109678105A (en) * | 2017-10-18 | 2019-04-26 | 英飞凌科技股份有限公司 | The method for entering opening of cavity and the MEMS component with closure elements are led in closing |
| CN113086938A (en) * | 2020-03-05 | 2021-07-09 | 迈瑞迪创新科技有限公司 | CMOS capping for MEMS devices |
| CN113049107A (en) * | 2021-01-29 | 2021-06-29 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array pixel level packaging structure and packaging method thereof |
| FR3128307A1 (en) * | 2021-10-14 | 2023-04-21 | Safran Electronics & Defense | NON-EVAPORABLE GETTER ACTIVATED AT LOW TEMPERATURE, PUMPING DEVICE AND ENCLOSURE CONTAINING SUCH A GETTER |
| CN114933276A (en) * | 2022-07-20 | 2022-08-23 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
| CN114933276B (en) * | 2022-07-20 | 2022-11-04 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
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